1571:
342:
829:
807:
1044:). This increases area of a chip design by a factor of 5, so must be reserved for smaller designs. But it has the secondary advantage of also being "fail-safe" in real time. In the event of a single-bit failure (which may be unrelated to radiation), the voting logic will continue to produce the correct result without resorting to a
575:, making the N-type MOSFET transistors easier and the P-type ones more difficult to switch on. The accumulated charge can be high enough to keep the transistors permanently open (or closed), leading to device failure. Some self-healing takes place over time, but this effect is not too significant. This effect is the same as
794:
device failure. White neutron beams—ostensibly the most representative SEE test method—are usually derived from solid target-based sources, resulting in flux non-uniformity and small beam areas. White neutron beams also have some measure of uncertainty in their energy spectrum, often with high thermal neutron content.
1055:
timer from running out. If radiation causes the processor to operate incorrectly, it is unlikely the software will work correctly enough to clear the watchdog timer. The watchdog eventually times out and forces a hard reset to the system. This is considered a last resort to other methods of radiation hardening.
921:
provides increased radiation resistance. Due to the high development costs of new radiation hardened processes, the smallest "true" rad-hard (RHBP, Rad-Hard By
Process) process is 150 nm as of 2016, however, rad-hard 65 nm FPGAs were available that used some of the techniques used in "true"
793:
While proton beams are widely used for SEE testing due to availability, at lower energies proton irradiation can often underestimate SEE susceptibility. Furthermore, proton beams expose devices to risk of total ionizing dose (TID) failure which can cloud proton testing results or result in pre-mature
605:. Permanent damage may occur if the duration of the pulse is too long, or if the pulse causes junction damage or a latchup. Latchups are commonly caused by the X-rays and gamma radiation flash of a nuclear explosion. Crystal oscillators may stop oscillating for the duration of the flash due to prompt
687:
are state changes of memory or register bits caused by a single ion interacting with the chip. They do not cause lasting damage to the device, but may cause lasting problems to a system which cannot recover from such an error. Soft error, reversible. In very sensitive devices, a single ion can cause
494:
The effects can vary wildly depending on all the parameters – type of radiation, total dose and radiation flux, combination of types of radiation, and even the kind of device load (operating frequency, operating voltage, actual state of the transistor during the instant it is struck by the particle)
522:
tend to show changes in electrical parameters at levels of 10 to 10 neutrons/cm, CMOS devices aren't affected until 10 neutrons/cm. The sensitivity of the devices may increase together with increasing level of integration and decreasing size of individual structures. There is also a risk of induced
797:
The disadvantages of both proton and spallation neutron sources can be avoided by using mono-energetic 14 MeV neutrons for SEE testing. A potential concern is that mono-energetic neutron-induced single event effects will not accurately represent the real-world effects of broad-spectrum atmospheric
764:
SEB may occur in power MOSFETs when the substrate right under the source region gets forward-biased and the drain-source voltage is higher than the breakdown voltage of the parasitic structures. The resulting high current and local overheating then may destroy the device. Hard error, irreversible.
1054:
A watchdog timer will perform a hard reset of a system unless some sequence is performed that generally indicates the system is alive, such as a write operation from an onboard processor. During normal operation, software schedules a write to the watchdog timer at regular intervals to prevent the
1713:
Vepsäläinen, Antti P.; Karamlou, Amir H.; Orrell, John L.; Dogra, Akshunna S.; Loer, Ben; Vasconcelos, Francisca; Kim, David K.; Melville, Alexander J.; Niedzielski, Bethany M.; Yoder, Jonilyn L.; Gustavsson, Simon; Formaggio, Joseph A.; VanDevender, Brent A.; Oliver, William D. (August 2020).
292:
produce high energy protons and electrons, and the secondary particles produced by their interactions produce significant radiation damage on sensitive control and particle detector components, of the order of magnitude of 10 MRad/year for systems such as the
587:
crystals are especially sensitive. Radiation performance curves for TID testing may be generated for all resultant effects testing procedures. These curves show performance trends throughout the TID test process and are included in the radiation test report.
95:) components are based on their non-hardened equivalents, with some design and manufacturing variations that reduce the susceptibility to radiation damage. Due to the extensive development and testing required to produce a radiation-tolerant design of a
596:
The short-time high-intensity pulse of radiation, typically occurring during a nuclear explosion. The high radiation flux creates photocurrents in the entire body of the semiconductor, causing transistors to randomly open, changing logical states of
1032:
boards may independently compute an answer to a calculation and compare their answers. Any system that produces a minority result will recalculate. Logic may be added such that if repeated errors occur from the same system, that board is shut down.
322:
in the packaging of the chips were producing alpha particles, which were then occasionally discharging some of the capacitors used to store the DRAM data bits. These effects have been reduced today by using purer packaging materials, and employing
653:, a destructive latchup and burnout. Single event effects have importance for electronics in satellites, aircraft, and other civilian and military aerospace applications. Sometimes, in circuits not involving latches, it is helpful to introduce
102:
Radiation-hardened products are typically tested to one or more resultant-effects tests, including total ionizing dose (TID), enhanced low dose rate effects (ELDRS), neutron and proton displacement damage, and single event effects (SEEs).
1168:
Nuclear hardness is determined for specified or actual quantified environmental conditions and physical parameters, such as peak radiation levels, overpressure, velocities, energy absorbed, and electrical stress. It is achieved through
740:) until the device is power-cycled. As the effect can happen between the power source and substrate, destructively high current can be involved and the part may fail. Hard error, irreversible. Bulk CMOS devices are most susceptible.
562:
and causes slow gradual degradation of the device's performance. A total dose greater than 5000 rads delivered to silicon-based devices in seconds to minutes will cause long-term degradation. In CMOS devices, the radiation creates
2084:
435:("healing") of the damaged lattice, leading to a lower degree of damage than with the same doses delivered in low intensity over a long time (LDR or Low Dose Rate). This type of problem is particularly significant in
1093:
The market size for radiation hardened electronics used in space applications was estimated to be $ 2.35 billion in 2021. A new study has estimated that this will reach approximately $ 4.76 billion by the year 2032.
948:, is considered a likely candidate to provide radiation hardened, rewritable, non-volatile conductor memory. Physical principles and early tests suggest that MRAM is not susceptible to ionization-induced data loss.
798:
neutrons. However, recent studies have indicated that, to the contrary, mono-energetic neutrons—particularly 14 MeV neutrons—can be used to quite accurately understand SEE cross-sections in modern microelectronics.
2314:"Radiation-Hardened Electronics for Space Application Market - A Global and Regional Analysis: Focus on Platform, Manufacturing Technique, Material Type, Component, and Country - Analysis and Forecast, 2022-2032"
748:
Single-event snapback is similar to SEL but not requiring the PNPN structure, can be induced in N-channel MOS transistors switching large currents, when an ion hits near the drain junction and causes
1063:
Radiation-hardened and radiation tolerant components are often used in military and aerospace applications, including point-of-load (POL) applications, satellite system power supplies, step down
1018:(ECC memory) uses redundant bits to check for and possibly correct corrupted data. Since radiation's effects damage the memory content even when the system is not accessing the RAM, a "
579:
in high-integration high-speed electronics. Crystal oscillators are somewhat sensitive to radiation doses, which alter their frequency. The sensitivity can be greatly reduced by using
304:(EMP), neutron radiation, and a flux of both primary and secondary charged particles. In case of a nuclear war they pose a potential concern for all civilian and military electronics.
1048:. System level voting between three separate processor systems will generally need to use some circuit-level voting logic to perform the votes between the three processor systems.
1557:
773:
SEGR was observed in power MOSFETs when a heavy ion hits the gate region while a high voltage is applied to the gate. A local breakdown then happens in the insulating layer of
531:
instruments. Induced radiation, together with residual radiation from impurities in used materials, can cause all sorts of single-event problems during the device's lifetime.
2809:
668:
SET happens when the charge collected from an ionization event discharges in the form of a spurious signal traveling through the circuit. This is de facto the effect of an
567:
in the gate insulation layers, which cause photocurrents during their recombination, and the holes trapped in the lattice defects in the insulator create a persistent gate
461:
Ionization effects are caused by charged particles, including the ones with energy too low to cause lattice effects. The ionization effects are usually transient, creating
2393:
962:. SRAM cells have more transistors per cell than usual (which is 4T or 6T), which makes the cells more tolerant to SEUs at the cost of higher power consumption and size.
244:. The atmosphere filters most of these, so they are primarily a concern for spacecraft and high-altitude aircraft, but can also affect ordinary computers on the surface.
645:
track behind. This ionization may cause a highly localized effect similar to the transient dose one - a benign glitch in output, a less benign bit flip in memory or a
899:
chips were available in radiation-hardened versions (RadHard). While SOI eliminates latchup events, TID and SEE hardness are not guaranteed to be improved.
1022:" circuit must continuously sweep the RAM; reading out the data, checking the redundant bits for data errors, then writing back any corrections to the RAM.
2289:
1930:
Normand, Eugene; Dominik, Laura (20–23 July 2010). "Cross
Comparison Guide for Results of Neutron SEE Testing of Microelectronics Applicable to Avionics".
689:
2327:
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1663:
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Single-event effects (SEE) have been studied extensively since the 1970s. When a high-energy particle travels through a semiconductor, it leaves an
2201:
506:
A neutron interacting with the semiconductor lattice will displace its atoms. This leads to an increase in the count of recombination centers and
2567:
León-Florian, E.; Schönbacher, H.; Tavlet, M. (1993). Data compilation of dosimetry methods and radiation sources for material testing (Report).
934:
453:). Components certified as ELDRS (Enhanced Low Dose Rate Sensitive) free, do not show damage with fluxes below 0.01 rad(Si)/s = 36 rad(Si)/h.
197:
for satellites, nuclear reactors in power plants for sensors and control circuits, particle accelerators for control electronics particularly
3317:
2719:
Holmes-Siedle, Andrew; van Lint, Victor A. J. (2000). "Radiation
Effects in Electronic Materials and Devices". In Meyers, Robert A. (ed.).
2508:
3302:
1592:
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transistors, which have an unconventional physical construction, together with an unconventional physical layout, can also be effective.
705:
2898:
2368:
2145:
Wang, B.; Wang, Z.; Hu, C.; Zhao, Y.; Zhang, Y.; Zhao, W. (2018). "Radiation
Hardening Techniques for SOT-MRAM Peripheral Circuitry".
1222:, Russian 50 MHz microcontroller designed by Milandr and manufactured by Sitronics-Mikron on 180 nm bulk-silicon technology.
2880:
2895:(also includes a general "backgrounder" section on Sandia's manufacturing processes for radiation-hardening of microelectronics)
264:. The particle flux in the regions farther from the Earth can vary wildly depending on the actual conditions of the Sun and the
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1947:
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1601:
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1004:
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1416:, through its Satellite Development Center, produces a radiation hardened space computer variant based on the PowerPC 750.
1132:
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structure. A heavy ion or a high-energy proton passing through one of the two inner-transistor junctions can turn on the
137:, this can cause results which are inaccurate or unintelligible. This is a particularly serious problem in the design of
2472:
2264:
300:
Nuclear explosions produce a short and extremely intense surge through a wide spectrum of electromagnetic radiation, an
3413:
3246:
2538:
1274:(TTMR) technology, and single event function interrupts (SEFI) with H-Core technology. The processor is the high speed
1259:
The Proton 100k SBC by Space Micro Inc., introduced in 2003, uses an updated voting scheme called TTMR which mitigates
1114:, facility, or device is expected to degrade in a given nuclear environment, 2) the physical attributes of a system or
1158:
radiation levels, overpressure, peak velocities, energy absorbed, and electrical stress) must be defined or specified.
925:
Bipolar integrated circuits generally have higher radiation tolerance than CMOS circuits. The low-power
Schottky (LS)
271:
Secondary particles result from interaction of other kinds of radiation with structures around the electronic devices.
254:
and consist of a large flux of high-energy (several GeV) protons and heavy ions, again accompanied by X-ray radiation.
2847:
2797:
2755:
2728:
2700:
2654:
2604:
2585:
2557:
1466:
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cells during write or erase, when the cells are subjected to a comparatively high voltage. Hard error, irreversible.
381:
2067:
3398:
3312:
1143:
1278:
1036:
Redundant elements may be used at the circuit level. A single bit may be replaced with three bits and separate "
2807:
Watts, Stephen J. (1997). "Overview of radiation damage in silicon detectors — Models and defect engineering".
2738:
van Lint, Victor A. J.; Flanagan, Terry M.; Leadon, Roland Eugene; Naber, James Allen; Rogers, Vern C. (1980).
2335:
2247:
1271:
363:
3378:
301:
2230:
Krishnamohan, Srivathsan; Mahapatra, Nihar R. (2005). "Analysis and design of soft-error hardened latches".
485:
transistors leads to worsening of their performance, up to device failure when the dose is high enough (see
465:
and soft errors, but can lead to destruction of the device if they trigger other damage mechanisms (e.g., a
3403:
1584:
955:
307:
311:
206:
3408:
3134:
1845:
Ziegler, J. F.; Lanford, W. A. (June 1981). "The effect of sea level cosmic rays on electronic devices".
959:
922:
rad-hard processes (RHBD, Rad-Hard By Design). As of 2019 110 nm rad-hard processes are available.
511:
2415:
1086:
features many radiation-related tests, but has no specification for single event latchup frequency. The
3423:
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53:
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1991:
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chip, the technology of radiation-hardened chips tends to lag behind the most recent developments.
3129:
2923:
1794:
Ziegler, J. F.; Lanford, W. A. (16 November 1979). "Effect of Cosmic Rays on
Computer Memories".
1510:
1428:
1375:
The SP0 and SP0-S are produced by Aitech
Defense Systems is a 3U cPCI SBC which utilizes the SOI
1213:
992:
669:
602:
598:
576:
440:
352:
24:
2618:. International Series on Advances in Solid State Electronics and Technology. World Scientific.
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and gamma-ray radiation. Most effects are caused by particles with energies between 0.1 and 20
117:
Environments with high levels of ionizing radiation create special design challenges. A single
2022:
Protection of
Instrument Control Computers against Soft and Hard Errors and Cosmic Ray Effects
3374:
3109:
1596:
1477:
1462:
1350:
1225:
1192:
930:
857:
546:. Kinetic energy effects (namely lattice displacement) of charged particles belong here too.
528:
439:, which are dependent on minority carriers in their base regions; increased losses caused by
324:
294:
247:
69:
41:
2360:
2265:"FPGA development devices for radiation-hardened space applications introduced by Microsemi"
1308:
used by NASA is a 32-bit microprocessor for spacecraft onboard computer applications (i. e.
173:
markets employ various methods of radiation hardening. The resulting systems are said to be
3418:
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3119:
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2818:
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1854:
1803:
1737:
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941:
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535:
495:– which makes thorough testing difficult, time-consuming, and requiring many test samples.
289:
84:
16:
Processes and techniques used for making electronic devices resistant to ionizing radiation
1235:
M5208 used by
General Dynamics is a low power (1.5 W) radiation hardened alternative.
879:) are commonly used. While normal commercial-grade chips can withstand between 50 and 100
617:
SGEMP are caused by the radiation flash traveling through the equipment and causing local
8:
3226:
3139:
2891:
Sandia Labs to develop (...) radiation-hardened
Pentium (...) for space and defense needs
2714:. International Series of Monographs on Solid State Physics. Vol. 2. Pergamon Press.
1328:
1110:
has the following meanings: 1) an expression of the extent to which the performance of a
1064:
876:
860:
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283:
3307:
2822:
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1216:, introduced in 1976, was the first serially-produced radiation-hardened microprocessor.
3343:
3164:
3144:
3124:
3008:
2916:
2765:
2122:
Benigni, Marcello; Liberali, Valentino; Stabile, Alberto; Calligaro, Cristiano (2010).
1827:
1769:
1727:
1616:
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1405:
cores against each other to mitigate radiation effects. Seven of those are used by the
1260:
1232:
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However, not all military-grade components are radiation hardened. For example, the US
985:
981:
680:
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524:
436:
158:
49:
45:
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2101:
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2600:
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2553:
2534:
2243:
2158:
1943:
1910:
1819:
1773:
1761:
1753:
1461:
2, 3, 4 and 5 are radiation hardened processors designed by Gaisler Research and the
1420:
1406:
1287:
1275:
1161:
The physical attributes of a system or component that will allow a defined degree of
1119:
1103:
709:
646:
606:
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507:
279:
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214:
198:
150:
1715:
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2150:
2127:
1935:
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1831:
1811:
1745:
1645:
1493:
1424:
1019:
970:
756:. The transistor then opens and stays opened, a hard error, which is irreversible.
660:
circuits that slow down the circuit's reaction time beyond the duration of an SEE.
630:
622:
532:
424:
260:
contain electrons (up to about 10 MeV) and protons (up to 100s MeV) trapped in the
210:
146:
126:
118:
112:
96:
73:
31:
3353:
3338:
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2874:
2533:. River Publishers Series in Electronic Materials and Devices. River Publishers.
1815:
996:
911:
907:
837:
815:
774:
558:
damage) caused by ionizing radiation over the exposition time. It is measured in
542:, are very sensitive to neutrons. The lattice damage influences the frequency of
477:
and X-ray radiation may belong to this category as well. Gradual accumulation of
416:
275:
134:
77:
65:
61:
2154:
3201:
3159:
3149:
3071:
3061:
3031:
2666:
Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices
1964:
1413:
1383:
based, capable of processing speeds ranging from 833 MHz to 1.18 GHz.
1068:
1045:
1029:
753:
229:
154:
20:
2668:. Selected Topics in Electronics and Systems. Vol. 34. World Scientific.
2491:"NASA JPL Selects Microchip for Game-Changing Spaceflight Computing Processor"
2131:
1939:
1749:
3392:
3276:
3036:
3021:
2068:"The other Atmel: Radiation Hardened Sparc CPU's | the CPU Shack Museum"
1757:
1649:
1439:
1240:
1162:
974:
864:
733:
713:
701:
657:
626:
478:
265:
2788:(1986). "The Lattice Vacancy in Silicon". In Pantelides, Sokrates T. (ed.).
2290:"Rad-hard electronics for space to reach $ 4.76 billion by 2032, study says"
2239:
1513:
are developing HPSC, a Cortex-A53 based processor for future spacecraft use
1270:
SBC by Space Micro Inc, introduced in 2004, mitigates SEU with its patented
157:. In order to ensure the proper operation of such systems, manufacturers of
3256:
3216:
3081:
1823:
1765:
1380:
1309:
1154:
lost, and equipment damage) must be defined or specified. The environment (
1037:
918:
580:
470:
428:
412:
319:
241:
130:
2234:. Proceedings of the 15th ACM Great Lakes symposium on VLSI. p. 328.
1079:
power sources, and high efficiency, low voltage subsystem power supplies.
2998:
2149:. 2018 IEEE International Magnetics Conference (INTERMAG). pp. 1–2.
1887:
1402:
1354:
1251:
1184:
1087:
1083:
1000:
926:
896:
888:
887:), space-grade SOI and SOS chips can survive doses between 1000 and 3000
880:
841:
819:
539:
474:
193:
Typical sources of exposure of electronics to ionizing radiation are the
57:
44:
and circuits resistant to damage or malfunction caused by high levels of
1664:"Quantum computers may be destroyed by high-energy particles from space"
3046:
2993:
2890:
2364:
2232:
Proceedings of the 15th ACM Great Lakes symposium on VLSI - GLSVSLI '05
1530:
1391:
1305:
1267:
1200:
1015:
892:
884:
654:
618:
559:
366: in this section. Unsourced material may be challenged and removed.
221:
142:
2509:"NASA Awards Next-Generation Spaceflight Computing Processor Contract"
1881:
984:
of materials, it is possible to shield the chips themselves by use of
3333:
3206:
3041:
2988:
2978:
2939:
1891:
1866:
1500:
1316:
1298:
951:
778:
777:, causing local overheat and destruction (looking like a microscopic
729:
725:
170:
138:
2881:(I)ntegrated Approach with COTS Creates Rad-Tolerant (SBC) for Space
341:
2983:
2968:
2049:
1732:
1570:
1481:
1207:
903:
872:
737:
310:
were an insidious source of radiation that was found to be causing
233:
166:
122:
2903:
2177:
958:
is often replaced by more rugged (but larger, and more expensive)
427:
and worsening the analog properties of the affected semiconductor
3261:
2904:
Vanderbilt University Institute for Space and Defense Electronics
2673:
2623:
2473:"NASA Makes RISC-V the Go-to Ecosystem for Future Space Missions"
2217:
Protection of LSI Microprocessors using Triple Modular Redundancy
2126:. 27th International Conference on Microelectronics Proceedings.
1716:"Impact of ionizing radiation on superconducting qubit coherence"
1435:
1347:
1336:
828:
568:
519:
466:
431:. Counterintuitively, higher doses over short time cause partial
408:
202:
1558:
Comparison of embedded computer systems on board the Mars rovers
2838:
Ziegler, James F.; Biersack, Jochen P.; Littmark, Uffe (1985).
2742:. Vol. 1. New York: John Wiley & Sons. p. 13073.
2643:
Archive of Radiation Effects Short Course Notebooks (1980–2006)
2121:
1547:
1524:
1465:. They are described in synthesizable VHDL available under the
1387:
1358:
1247:
1196:
1111:
782:
584:
503:
The "end-user" effects can be characterized in several groups,
482:
462:
225:
162:
2416:
High-Performance Spaceflight Computing (HPSC) Project Overview
1712:
995:
protecting the chips, as naturally prevalent boron-10 readily
806:
3086:
2973:
2810:
Nuclear Instruments and Methods in Physics Research Section A
2566:
2050:"Common misconceptions about space-grade integrated circuits"
1454:
1447:
1365:
1320:
1263:(SEU) in a single processor. The processor is Equator BSP-15.
1210:
510:, reducing the lifetime of minority carriers, thus affecting
411:, protons, alpha particles, heavy ions, and very high energy
237:
2348:
1909:. Springer Science & Business Media. pp. xii–xiii.
1480:(SBC), produced by Cobham Semiconductor Solutions (formerly
1284:. The Proton200k operates at 4000 MIPS while mitigating SEU.
2790:
Deep Centers in Semiconductors: A State-of-the-Art Approach
2737:
2723:. Vol. 13 (Third ed.). New York: Academic Press.
2646:
2568:
2219:. International IEEE Symposium on Fault Tolerant Computing.
1536:
1506:
1485:
1458:
1294:
1151:
1076:
1072:
1058:
515:
315:
268:. Due to their position they pose a concern for satellites.
2435:
1431:, PCI, 2x Ethernet, 2x UARTS, DMA controller, L1/L2 cache
977:
is straightforward to reduce exposure of the bare device.
224:
come from all directions and consist of approximately 85%
2024:. International Seminar on Space Scientific Engineering.
1516:
1188:
1118:
that will allow survival in an environment that includes
1097:
1090:
space probe may have failed due to a similar assumption.
1028:
elements can be used at the system level. Three separate
642:
251:
2020:
Leppälä, Kari; Verkasalo, Raimo (17–23 September 1989).
1934:. 2010 IEEE Radiation Effects Data Workshop. p. 8.
692:(MBU) in several adjacent memory cells. SEUs can become
419:, creating lasting damage, and increasing the number of
2837:
2740:
Mechanisms of Radiation Effects in Electronic Materials
2664:
Schrimpf, Ronald D.; Fleetwood, Daniel M. (July 2004).
2147:
2018 IEEE International Magnetics Conference (INTERMAG)
1993:
Rad Hard 16 MegaBit 3.3V SRAM MultiChip Module AT68166H
1438:
processor, is the successor to the RAD750 based on the
217:
for potentially all military and civilian electronics.
2710:
Schulman, James Herbert; Compton, Walter Dale (1962).
2578:
Ionizing Radiation Effects in MOS Devices and Circuits
1368:
is produced by Honeywell Aerospace. Based on hardened
906:
gives it higher tolerance to deep-level defects; e.g.
2718:
2229:
2085:"Avnet: Quality Electronic Components & Services"
1962:
1886:. 3rd International Particle Accelerator Conference.
1131:
Nuclear hardness may be expressed in terms of either
1040:" for each bit to continuously determine its result (
2599:(Second ed.). New York: Van Nostrand Reinhold.
2262:
1566:
1390:
SBC, also produced by BAE Systems, and based on the
554:
The cumulative damage of the semiconductor lattice (
30:
For hardening of materials caused by radiation, see
2328:"SP0 3U CompactPCI Radiation Tolerant PowerPC® SBC"
1173:
and it is verified by test and analysis techniques.
1165:
in a given environment created by a nuclear weapon.
331:
2938:
2693:Semiconductor Material and Device Characterization
2547:
2124:Design of rad-hard SRAM cells: A comparative study
415:. They change the arrangement of the atoms in the
2663:
1989:
1177:
801:
188:
3390:
2792:(Second ed.). New York: Gordon and Breach.
2390:"VA10820 - Radiation Hardened ARM Cortex-M0 MCU"
2019:
704:, placing the device into an undefined state, a
612:
282:which can affect sensor and control circuits in
2721:Encyclopedia of Physical Science and Technology
2709:
2575:
2569:CERN Technical Inspection and Safety Commission
1689:"Cosmic rays may soon stymie quantum computing"
759:
213:for spacecraft and high-altitude aircraft, and
106:
2597:The Effects of Radiation on Electronic Systems
2529:Calligaro, Christiano; Gatti, Umberto (2018).
2528:
2178:Tiehu Li; Yintang Yang; Junan Zhang; Jia Liu.
2144:
1929:
1844:
1793:
549:
399:Two fundamental damage mechanisms take place:
2924:
2595:Messenger, George C.; Ash, Milton S. (1992).
2576:Ma, Tso-Ping; Dressendorfer, Paul V. (1989).
2043:
2041:
1484:Microelectronics Solutions), enabled for the
988:(consisting only of isotope boron-11) in the
980:To protect against neutron radiation and the
2594:
2552:(Second ed.). Oxford University Press.
2015:
2013:
1904:
1640:Messenger, George C. "Radiation hardening".
1319:is a 32-bit microprocessor, compatible with
768:
700:) when they upset control circuits, such as
2883:– By Chad Thibodeau, Maxwell Technologies;
2180:"A novel SEU hardened SRAM bit-cell design"
1905:Messenger, G.C.; Ash, Milton (2013-11-27).
1593:Institute for Space and Defense Electronics
1419:The BRE440 by Broad Reach Engineering. IBM
1394:processor, is the successor to the RAD6000.
781:) of the gate region. It can occur even in
2931:
2917:
2548:Holmes-Siedle, Andrew; Adams, Len (2002).
2038:
1883:Radiation Damage to Electronics at the LHC
1546:to develop a new HPSC processor, based on
685:transient radiation effects in electronics
2842:. Vol. 1. New York: Pergamon Press.
2640:
2214:
2029:
2010:
1932:2010 IEEE Radiation Effects Data Workshop
1731:
856:Hardened chips are often manufactured on
663:
591:
394:
382:Learn how and when to remove this message
87:are susceptible to radiation damage, and
2840:The Stopping and Range of Ions in Solids
2690:
2616:Ionizing Radiation Effects in MOS Oxides
2079:
2077:
1059:Military and space industry applications
827:
805:
743:
327:to detect and often correct DRAM errors.
2784:
2047:
1879:
719:
402:
3391:
3272:Wireless electronic devices and health
2613:
2413:
2287:
1966:RTSX-SU Radiation-Tolerant FPGAs (UMC)
1098:Nuclear hardness for telecommunication
636:
527:, which is a major source of noise in
487:
449:
2912:
2806:
2074:
1639:
1499:The Vorago VA10820, a 32-bit ARMv6-M
708:, or a halt, which would then need a
675:
456:
3298:List of civilian radiation accidents
3267:Wireless device radiation and health
3262:Biological dose units and quantities
3212:Electromagnetic radiation and health
2899:Radiation effects on quartz crystals
2522:
2423:NASA Technical Reports Server (NTRS)
2361:"Single Board Computer (SBC) Family"
2269:Military & Aerospace Electronics
2048:Shunkov, >V. (9 September 2020).
1963:Microsemi Corporation (March 2012),
1519:DAHLIA, a Cortex-R52 based processor
498:
364:adding citations to reliable sources
335:
2695:. New York: John Wiley & Sons.
2580:. New York: John Wiley & Sons.
2263:Mil & Aero Staff (2016-06-03).
2215:Platteter, Dale G. (October 1980).
2102:"Aerospace & Defense Solutions"
1142:The extent of expected performance
732:-like structure, which then stays "
85:semiconductor electronic components
13:
3247:Radioactivity in the life sciences
2893:– Sandia press release, 8 Dec 1998
1122:and electromagnetic pulses (EMP).
929:can withstand 1000 krad, and many
694:Single-event functional interrupts
407:Lattice displacement is caused by
56:), especially for environments in
14:
3440:
2857:
1467:GNU Lesser General Public License
933:can withstand 10 000 krad. Using
724:SEL can occur in any chip with a
201:devices, residual radiation from
2414:Powell, Wesley A. (2018-11-13).
1569:
340:
332:Radiation effects on electronics
2531:Rad-hard Semiconductor Memories
2501:
2483:
2465:
2440:
2429:
2407:
2396:from the original on 2019-02-14
2382:
2371:from the original on 2019-04-08
2353:
2349:Broad Reach Engineering Website
2342:
2320:
2306:
2281:
2256:
2223:
2208:
2194:
2171:
2138:
2115:
2094:
2060:
1983:
1956:
902:Choosing a substrate with wide
571:and influence the transistors'
351:needs additional citations for
250:come from the direction of the
1923:
1898:
1873:
1838:
1787:
1706:
1681:
1656:
1633:
1272:time triple modular redundancy
1178:Examples of rad-hard computers
1051:Hardened latches may be used.
867:wafers. Silicon on insulator (
802:Radiation-hardening techniques
788:
625:in the material of the chips,
318:chips in the 1970s. Traces of
189:Major radiation damage sources
153:, nuclear power stations, and
1:
2831:10.1016/S0168-9002(96)01110-2
2550:Handbook of Radiation Effects
1627:
613:Systems-generated EMP effects
443:cause loss of the transistor
3429:Semiconductor device defects
2691:Schroder, Dieter K. (1990).
2334:. 2013-12-15. Archived from
2332:Aitech Rugged COTS Solutions
1816:10.1126/science.206.4420.776
1585:Communications survivability
1016:Error correcting code memory
965:
760:Single-event induced burnout
107:Problems caused by radiation
7:
3135:Cosmic background radiation
2641:Platteter, Dale G. (2006).
2614:Oldham, Timothy R. (2000).
2288:Diagle, Lisa (2022-06-17).
2155:10.1109/INTMAG.2018.8508368
1602:Mars Reconnaissance Orbiter
1562:
851:
550:Total ionizing dose effects
488:total ionizing dose effects
10:
3445:
3364:
3222:Lasers and aviation safety
1990:Atmel Corporation (2008),
1847:Journal of Applied Physics
1555:
1471:GNU General Public License
1199:variant), is based on the
1010:
672:. Soft error, reversible.
110:
29:
18:
3414:Electronics manufacturing
3362:
3326:
3290:
3252:Radioactive contamination
3177:
3105:Electromagnetic radiation
3095:
3007:
2954:
2947:
2294:Military Embedded Systems
2184:IEICE Electronics Express
2132:10.1109/miel.2010.5490481
1940:10.1109/REDW.2010.5619496
1750:10.1038/s41586-020-2619-8
1540:Jet Propulsion Laboratory
1042:triple modular redundancy
990:borophosphosilicate glass
769:Single-event gate rupture
518:ones. Bipolar devices on
274:Nuclear reactors produce
258:Van Allen radiation belts
195:Van Allen radiation belts
54:electromagnetic radiation
40:is the process of making
3365:See also the categories
3303:1996 Costa Rica accident
2964:Acoustic radiation force
2571:. CERN-TIS-CFM-IR-93-03.
1880:Brugger, M. (May 2012).
1650:10.1036/1097-8542.566850
1282:digital signal processor
1125:
750:avalanche multiplication
529:high energy astrophysics
523:radioactivity caused by
308:Chip packaging materials
207:chip packaging materials
19:Not to be confused with
3399:Military communications
3277:Radiation heat-transfer
3130:Gravitational radiation
2712:Color Centers in Solids
2392:. Vorago Technologies.
2240:10.1145/1057661.1057740
1607:MESSENGER Mercury probe
1511:United States Air Force
1377:PowerQUICC-III MPC8548E
670:electrostatic discharge
577:hot carrier degradation
121:can knock thousands of
25:radiation embrittlement
3318:1990 Zaragoza accident
3313:1984 Moroccan accident
3282:Linear energy transfer
2956:Non-ionizing radiation
2864:Federal Standard 1037C
1907:Single Event Phenomena
1357:, includes a rad-hard
1191:and used on board the
848:
825:
736:" (an effect known as
664:Single-event transient
651:high-power transistors
592:Transient dose effects
481:in the oxide layer in
395:Fundamental mechanisms
325:error-correcting codes
181:, or (within context)
3308:1987 Goiânia accident
3110:Synchrotron radiation
3100:Earth's energy budget
3082:Radioactive materials
3077:Particle accelerators
1597:Vanderbilt University
1589:EMC-aware programming
1478:single-board computer
1463:European Space Agency
1351:single-board computer
1171:design specifications
863:instead of the usual
847:process has been used
831:
809:
744:Single-event snapback
421:recombination centers
302:electromagnetic pulse
295:Large Hadron Collider
290:Particle accelerators
248:Solar particle events
70:particle accelerators
42:electronic components
3379:Radiation protection
3232:Radiation protection
3120:Black-body radiation
3027:Background radiation
2942:(physics and health)
1894:. pp. THPPP006.
1622:Juno Radiation Vault
1544:Microchip Technology
1401:, which votes three
1399:Maxwell Technologies
1397:The SCS750 built by
1116:electronic component
1065:switching regulators
973:the package against
895:). At one time many
720:Single-event latchup
556:lattice displacement
403:Lattice displacement
360:improve this article
320:radioactive elements
284:nuclear power plants
175:rad(iation)-hardened
3404:Integrated circuits
3349:Radiation hardening
3291:Radiation incidents
3227:Medical radiography
3186:Radiation syndrome
3140:Cherenkov radiation
2823:1997NIMPA.386..149W
2748:1980STIA...8113073V
1859:1981JAP....52.4305Z
1808:1979Sci...206..776Z
1742:2020Natur.584..551V
1353:(SBC), produced by
1329:Kurchatov Institute
832:Radiation hardened
810:Radiation hardened
681:Single-event upsets
637:Digital damage: SEE
609:induced in quartz.
565:electron–hole pairs
544:crystal oscillators
437:bipolar transistors
159:integrated circuits
60:(especially beyond
38:Radiation hardening
3409:Avionics computers
3344:Radioactive source
3165:Radiation exposure
3145:Askaryan radiation
3125:Particle radiation
3009:Ionizing radiation
2873:2011-03-01 at the
2786:Watkins, George D.
2448:"NOEL-V Processor"
1617:Tempest (codename)
1577:Electronics portal
1327:, manufactured by
1261:single event upset
982:neutron activation
849:
826:
690:multiple-bit upset
676:Single-event upset
649:or, especially in
525:neutron activation
508:deep-level defects
457:Ionization effects
215:nuclear explosions
89:radiation-hardened
50:particle radiation
46:ionizing radiation
3424:Radiation effects
3386:
3385:
3367:Radiation effects
3237:Radiation therapy
3173:
3172:
3115:Thermal radiation
3052:Neutron radiation
3017:Radioactive decay
2683:978-981-238-940-4
2633:978-981-02-3326-6
2523:Books and Reports
2164:978-1-5386-6425-4
1949:978-1-4244-8405-8
1916:978-1-4615-6043-2
1802:(4420): 776–788.
1726:(7822): 551–556.
1550:Intelligence X280
1276:Texas Instruments
1120:nuclear radiation
1104:telecommunication
997:captures neutrons
993:passivation layer
940:Magnetoresistive
917:Use of a special
871:) and silicon on
631:electrical cables
623:electric currents
607:photoconductivity
573:threshold voltage
499:Resultant effects
425:minority carriers
392:
391:
384:
280:neutron radiation
262:geomagnetic field
199:particle detector
165:intended for the
151:military aircraft
147:quantum computers
133:. In the case of
74:nuclear accidents
3436:
3327:Related articles
3242:Radiation damage
3067:Nuclear reactors
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1425:system-on-a-chip
1250:manufactured by
1108:nuclear hardness
836:of the 1886VE10
814:of the 1886VE10
423:, depleting the
387:
380:
376:
373:
367:
344:
336:
236:, together with
211:cosmic radiation
135:digital circuits
127:electronic noise
119:charged particle
113:Radiation damage
66:nuclear reactors
52:and high-energy
32:radiation damage
3444:
3443:
3439:
3438:
3437:
3435:
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3387:
3382:
3381:
3358:
3354:Havana syndrome
3339:Nuclear physics
3322:
3286:
3179:
3169:
3155:Unruh radiation
3091:
3072:Nuclear weapons
3057:Nuclear fission
3003:
2943:
2937:
2894:
2875:Wayback Machine
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2800:
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2070:. 27 July 2009.
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1488:microprocessor.
1407:Gaia spacecraft
1323:, developed by
1297:is produced by
1180:
1128:
1100:
1069:microprocessors
1061:
1013:
968:
912:gallium nitride
908:silicon carbide
854:
838:microcontroller
816:microcontroller
804:
791:
775:silicon dioxide
771:
762:
754:charge carriers
746:
722:
678:
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512:bipolar devices
501:
459:
450:neutron effects
417:crystal lattice
405:
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388:
377:
371:
368:
357:
345:
334:
276:gamma radiation
230:alpha particles
191:
155:nuclear weapons
125:loose, causing
115:
109:
97:microelectronic
78:nuclear warfare
62:low Earth orbit
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3202:Health physics
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3160:Dark radiation
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3150:Bremsstrahlung
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2858:External links
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2817:(1): 149–155.
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2452:Cobham Gaisler
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2338:on 2014-06-23.
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2204:. 2 June 2018.
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1046:watchdog timer
1030:microprocessor
1012:
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999:and undergoes
986:depleted boron
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891:(100 and 300 k
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3394:
3380:
3376:
3372:
3371:Radioactivity
3368:
3361:
3355:
3352:
3350:
3347:
3345:
3342:
3340:
3337:
3335:
3332:
3331:
3329:
3325:
3319:
3316:
3314:
3311:
3309:
3306:
3304:
3301:
3299:
3296:
3295:
3293:
3289:
3283:
3280:
3278:
3275:
3273:
3270:
3268:
3265:
3263:
3260:
3258:
3255:
3253:
3250:
3248:
3245:
3243:
3240:
3238:
3235:
3233:
3230:
3228:
3225:
3223:
3220:
3218:
3215:
3213:
3210:
3208:
3205:
3203:
3200:
3196:
3193:
3191:
3188:
3187:
3185:
3184:
3182:
3176:
3166:
3163:
3161:
3158:
3156:
3153:
3151:
3148:
3146:
3143:
3141:
3138:
3136:
3133:
3131:
3128:
3126:
3123:
3121:
3118:
3116:
3113:
3111:
3108:
3106:
3103:
3101:
3098:
3097:
3094:
3088:
3085:
3083:
3080:
3078:
3075:
3073:
3070:
3068:
3065:
3063:
3060:
3058:
3055:
3053:
3050:
3048:
3045:
3043:
3040:
3038:
3037:Beta particle
3035:
3033:
3030:
3028:
3025:
3023:
3022:Cluster decay
3020:
3018:
3015:
3014:
3012:
3010:
3006:
3000:
2997:
2995:
2992:
2990:
2987:
2985:
2982:
2980:
2977:
2975:
2972:
2970:
2967:
2965:
2962:
2961:
2959:
2957:
2953:
2950:
2948:Main articles
2946:
2941:
2934:
2929:
2927:
2922:
2920:
2915:
2914:
2911:
2905:
2902:
2900:
2897:
2892:
2889:
2886:
2882:
2879:
2876:
2872:
2869:
2865:
2862:
2861:
2851:
2849:0-08-021603-X
2845:
2841:
2836:
2832:
2828:
2824:
2820:
2816:
2812:
2811:
2805:
2801:
2799:2-88124-109-3
2795:
2791:
2787:
2783:
2779:
2767:
2759:
2757:0-471-04106-8
2753:
2749:
2745:
2741:
2736:
2732:
2730:0-12-227423-7
2726:
2722:
2717:
2713:
2708:
2704:
2702:0-471-51104-8
2698:
2694:
2689:
2685:
2679:
2675:
2671:
2667:
2662:
2658:
2656:1-4244-0304-9
2652:
2648:
2644:
2639:
2635:
2629:
2625:
2621:
2617:
2612:
2608:
2606:0-442-23952-1
2602:
2598:
2593:
2589:
2587:0-471-84893-X
2583:
2579:
2574:
2570:
2565:
2561:
2559:0-19-850733-X
2555:
2551:
2546:
2542:
2536:
2532:
2527:
2526:
2515:. 2022-08-15.
2514:
2510:
2504:
2497:. 2022-09-27.
2496:
2492:
2486:
2479:. 2022-09-22.
2478:
2474:
2468:
2453:
2449:
2443:
2437:
2432:
2424:
2417:
2410:
2395:
2391:
2385:
2370:
2366:
2362:
2356:
2350:
2345:
2337:
2333:
2329:
2323:
2315:
2309:
2295:
2291:
2284:
2270:
2266:
2259:
2251:
2245:
2241:
2237:
2233:
2226:
2218:
2211:
2203:
2197:
2189:
2185:
2181:
2174:
2166:
2160:
2156:
2152:
2148:
2141:
2133:
2129:
2125:
2118:
2110:
2103:
2097:
2086:
2080:
2078:
2069:
2063:
2055:
2051:
2044:
2042:
2032:
2027:
2023:
2016:
2014:
1995:
1994:
1986:
1968:
1967:
1959:
1951:
1945:
1941:
1937:
1933:
1926:
1918:
1912:
1908:
1901:
1893:
1889:
1885:
1884:
1876:
1868:
1864:
1860:
1856:
1852:
1848:
1841:
1833:
1829:
1825:
1821:
1817:
1813:
1809:
1805:
1801:
1797:
1790:
1775:
1771:
1767:
1763:
1759:
1755:
1751:
1747:
1743:
1739:
1734:
1729:
1725:
1721:
1717:
1709:
1694:
1690:
1684:
1669:
1668:New Scientist
1665:
1659:
1651:
1647:
1643:
1642:AccessScience
1636:
1632:
1623:
1620:
1618:
1615:
1613:
1610:
1608:
1605:
1603:
1600:
1598:
1594:
1591:
1588:
1586:
1583:
1582:
1578:
1572:
1567:
1559:
1549:
1545:
1542:has selected
1541:
1538:
1535:
1532:
1529:
1528:
1526:
1523:
1518:
1515:
1512:
1508:
1505:
1502:
1498:
1497:
1495:
1492:
1487:
1483:
1479:
1475:
1473:respectively.
1472:
1468:
1464:
1460:
1456:
1452:
1451:
1449:
1446:
1441:
1440:PowerPC e5500
1437:
1433:
1430:
1426:
1422:
1418:
1415:
1411:
1408:
1404:
1400:
1396:
1393:
1389:
1385:
1382:
1378:
1374:
1371:
1367:
1363:
1360:
1356:
1352:
1349:
1345:
1344:
1342:
1338:
1335:
1330:
1326:
1322:
1318:
1314:
1311:
1307:
1303:
1300:
1296:
1292:
1291:
1289:
1286:
1283:
1280:
1277:
1273:
1269:
1265:
1262:
1258:
1253:
1249:
1245:
1244:
1242:
1241:MIL-STD-1750A
1239:
1234:
1230:
1229:
1227:
1224:
1221:
1218:
1215:
1212:
1209:
1205:
1203:architecture.
1202:
1198:
1194:
1193:Space Shuttle
1190:
1186:
1182:
1181:
1172:
1167:
1164:
1163:survivability
1160:
1157:
1153:
1150:outage time,
1149:
1145:
1141:
1138:
1137:vulnerability
1134:
1130:
1129:
1123:
1121:
1117:
1113:
1109:
1105:
1095:
1091:
1089:
1085:
1080:
1078:
1074:
1070:
1066:
1056:
1052:
1049:
1047:
1043:
1039:
1034:
1031:
1027:
1023:
1021:
1017:
1008:
1006:
1002:
998:
994:
991:
987:
983:
978:
976:
975:radioactivity
972:
963:
961:
957:
953:
949:
947:
943:
938:
936:
935:edgeless CMOS
932:
928:
923:
920:
915:
913:
909:
905:
900:
898:
894:
890:
886:
882:
878:
874:
870:
866:
865:semiconductor
862:
859:
846:
843:
839:
835:
830:
824:
821:
817:
813:
808:
799:
795:
786:
784:
780:
776:
766:
757:
755:
751:
741:
739:
735:
731:
727:
717:
715:
711:
707:
703:
699:
695:
691:
686:
682:
673:
671:
661:
659:
658:time constant
656:
652:
648:
644:
634:
632:
628:
624:
620:
610:
608:
604:
600:
589:
586:
582:
578:
574:
570:
566:
561:
557:
547:
545:
541:
537:
534:
530:
526:
521:
517:
513:
509:
504:
496:
492:
490:
489:
484:
480:
476:
472:
468:
464:
454:
452:
451:
446:
442:
441:recombination
438:
434:
430:
426:
422:
418:
414:
413:gamma photons
410:
400:
386:
383:
375:
372:December 2021
365:
361:
355:
354:
349:This section
347:
343:
338:
337:
326:
321:
317:
313:
309:
306:
303:
299:
296:
291:
288:
285:
281:
277:
273:
270:
267:
266:magnetosphere
263:
259:
256:
253:
249:
246:
243:
239:
235:
231:
227:
223:
220:
219:
218:
216:
212:
208:
204:
200:
196:
186:
184:
180:
176:
172:
168:
164:
160:
156:
152:
148:
144:
140:
136:
132:
131:signal spikes
128:
124:
120:
114:
104:
100:
98:
94:
90:
86:
81:
79:
75:
71:
67:
63:
59:
55:
51:
47:
43:
39:
33:
26:
22:
3375:Radiobiology
3348:
3257:Radiobiology
3217:Laser safety
2885:COTS Journal
2884:
2839:
2814:
2808:
2789:
2739:
2720:
2711:
2692:
2674:10.1142/5607
2665:
2642:
2624:10.1142/3655
2615:
2596:
2577:
2549:
2530:
2512:
2503:
2494:
2485:
2476:
2467:
2455:. Retrieved
2451:
2442:
2431:
2422:
2409:
2398:. Retrieved
2384:
2373:. Retrieved
2355:
2344:
2336:the original
2331:
2322:
2308:
2297:. Retrieved
2293:
2283:
2272:. Retrieved
2268:
2258:
2231:
2225:
2216:
2210:
2196:
2187:
2183:
2173:
2146:
2140:
2123:
2117:
2108:
2096:
2062:
2053:
2021:
2001:, retrieved
1992:
1985:
1974:, retrieved
1965:
1958:
1931:
1925:
1906:
1900:
1882:
1875:
1850:
1846:
1840:
1799:
1795:
1789:
1777:. Retrieved
1723:
1719:
1708:
1696:. Retrieved
1692:
1683:
1671:. Retrieved
1667:
1658:
1641:
1635:
1381:PowerPC e500
1370:PowerPC 603e
1310:New Horizons
1155:
1147:
1107:
1101:
1092:
1081:
1062:
1053:
1050:
1038:voting logic
1035:
1024:
1014:
979:
969:
950:
939:
924:
919:process node
916:
901:
855:
842:metalization
820:metalization
796:
792:
772:
763:
747:
723:
716:to recover.
697:
693:
684:
679:
667:
640:
616:
603:memory cells
595:
581:swept quartz
555:
553:
540:optocouplers
538:, common in
505:
502:
493:
486:
471:Photocurrent
460:
448:
406:
398:
378:
369:
358:Please help
353:verification
350:
192:
182:
178:
174:
116:
101:
92:
88:
82:
72:, or during
37:
36:
3419:Spaceflight
2999:Ultraviolet
2994:Radio waves
2202:"StackPath"
1999:(Datasheet)
1972:(Datasheet)
1888:New Orleans
1779:7 September
1698:7 September
1673:7 September
1612:Mars rovers
1423:core based
1403:PowerPC 750
1392:PowerPC 750
1355:BAE Systems
1252:GEC-Plessey
1185:System/4 Pi
1144:degradation
1106:, the term
1088:Fobos-Grunt
1084:MIL-STD-883
1001:alpha decay
931:ECL devices
927:5400 series
897:4000 series
883:(5 and 10 k
789:SEE testing
714:power cycle
633:and cases.
475:ultraviolet
312:soft errors
222:Cosmic rays
58:outer space
3393:Categories
3180:and health
3178:Radiation
3047:Cosmic ray
2887:, Dec 2003
2457:14 January
2436:ESA DAHLIA
2400:2018-11-02
2375:2018-11-02
2299:2022-06-18
2274:2018-11-02
2249:1595930574
2190:(12): 1–8.
1733:2001.09190
1628:References
1556:See also:
1476:The Gen 6
1321:MIPS R3000
1306:Mongoose-V
1301:Aerospace.
1268:Proton200k
1220:PIC 1886VE
1201:System/360
1187:, made by
1005:soft error
861:substrates
858:insulating
619:ionization
599:flip-flops
583:. Natural
514:more than
473:caused by
234:heavy ions
143:spacecraft
139:satellites
111:See also:
64:), around
3334:Half-life
3207:Dosimetry
3042:Gamma ray
2989:Microwave
2979:Starlight
2940:Radiation
2776:ignored (
2766:cite book
2495:microchip
2425:(Report).
2026:CiteSeerX
1892:Louisiana
1774:210920566
1758:1476-4687
1501:Cortex-M0
1331:, Russia.
1317:KOMDIV-32
1299:Honeywell
1026:Redundant
971:Shielding
966:Shielding
952:Capacitor
818:prior to
779:explosion
730:thyristor
706:test mode
683:(SEU) or
433:annealing
429:junctions
232:, and 1%
171:aerospace
145:, future
123:electrons
2984:Sunlight
2969:Infrared
2871:Archived
2394:Archived
2369:Archived
2054:habr.com
1824:17820742
1766:32848227
1693:phys.org
1563:See also
1509:and the
1482:Aeroflex
1233:Coldfire
1020:scrubber
904:band gap
873:sapphire
852:Physical
840:after a
738:latch-up
647:register
463:glitches
409:neutrons
203:isotopes
183:hardened
179:rad-hard
167:military
93:rad-hard
3195:chronic
2819:Bibcode
2744:Bibcode
2003:May 30,
1976:May 30,
1855:Bibcode
1832:2000982
1804:Bibcode
1796:Science
1738:Bibcode
1527:based:
1496:based:
1450:based:
1436:RAD5500
1348:RAD6000
1343:based:
1337:PowerPC
1290:based:
1243:based:
1228:based:
1208:RCA1802
1011:Logical
954:-based
845:etching
823:etching
752:of the
734:shorted
643:ionized
569:biasing
520:silicon
467:latchup
314:in new
226:protons
163:sensors
3377:, and
2846:
2796:
2754:
2727:
2699:
2680:
2653:
2630:
2603:
2584:
2556:
2537:
2477:sifive
2365:Cobham
2246:
2161:
2109:Onsemi
2028:
1946:
1913:
1830:
1822:
1772:
1764:
1756:
1720:Nature
1548:SiFive
1525:RISC-V
1427:, 266
1421:PPC440
1388:RAD750
1359:POWER1
1248:RH1750
1197:AP-101
1112:system
783:EEPROM
585:quartz
483:MOSFET
228:, 14%
3190:acute
3087:X-ray
2974:Light
2419:(PDF)
2105:(PDF)
2088:(PDF)
1997:(PDF)
1970:(PDF)
1828:S2CID
1770:S2CID
1728:arXiv
1455:ERC32
1448:SPARC
1366:RHPPC
1341:POWER
1325:NIISI
1211:8-bit
1156:e.g.,
1148:e.g.,
1126:Notes
1073:FPGAs
1003:(see
944:, or
712:or a
710:reset
479:holes
447:(see
238:X-ray
83:Most
2868:link
2844:ISBN
2794:ISBN
2778:help
2752:ISBN
2725:ISBN
2697:ISBN
2678:ISBN
2651:ISBN
2647:IEEE
2628:ISBN
2601:ISBN
2582:ISBN
2554:ISBN
2535:ISBN
2513:nasa
2459:2020
2244:ISBN
2159:ISBN
2005:2021
1978:2021
1944:ISBN
1911:ISBN
1820:PMID
1781:2020
1762:PMID
1754:ISSN
1700:2020
1675:2020
1537:NASA
1507:NASA
1486:LEON
1469:and
1459:LEON
1457:and
1453:The
1434:The
1429:MIPS
1412:The
1386:The
1364:The
1361:CPU.
1346:The
1315:The
1304:The
1295:RH32
1293:The
1288:MIPS
1266:The
1246:The
1231:The
1226:m68k
1206:The
1183:The
1152:data
1077:FPGA
960:SRAM
956:DRAM
946:MRAM
889:gray
881:gray
698:SEFI
621:and
601:and
560:rads
536:LEDs
533:GaAs
516:CMOS
445:gain
316:DRAM
278:and
161:and
129:and
68:and
2827:doi
2815:386
2670:doi
2620:doi
2236:doi
2151:doi
2128:doi
1936:doi
1863:doi
1812:doi
1800:206
1746:doi
1724:584
1646:doi
1517:ESA
1494:ARM
1214:CPU
1189:IBM
1135:or
1102:In
1007:).
942:RAM
910:or
893:rad
885:rad
877:SOS
869:SOI
834:die
812:die
491:).
469:).
362:by
252:sun
242:GeV
205:in
169:or
76:or
23:or
3395::
3373:,
3369:,
2825:.
2813:.
2770::
2768:}}
2764:{{
2750:.
2676:.
2649:.
2645:.
2626:.
2511:.
2493:.
2475:.
2450:.
2421:.
2367:.
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2330:.
2292:.
2267:.
2242:.
2188:14
2186:.
2182:.
2157:.
2107:.
2076:^
2052:.
2040:^
2012:^
1942:.
1890:,
1861:.
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1752:.
1744:.
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1075:,
1071:,
1067:,
914:.
688:a
655:RC
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2238::
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1952:.
1938::
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1806::
1783:.
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1442:.
1409:.
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