467:. FOUPs in many fabs contain an internal nitrogen atmosphere which helps prevent copper from oxidizing on the wafers. Copper is used in modern semiconductors for wiring. The insides of the processing equipment and FOUPs is kept cleaner than the surrounding air in the cleanroom. This internal atmosphere is known as a mini-environment and helps improve yield which is the amount of working devices on a wafer. This mini environment is within an EFEM (equipment front end module) which allows a machine to receive FOUPs, and introduces wafers from the FOUPs into the machine. Additionally many machines also handle wafers in clean nitrogen or vacuum environments to reduce contamination and improve process control. Fabrication plants need large amounts of liquid nitrogen to maintain the atmosphere inside production machinery and FOUPs, which are constantly purged with nitrogen. There can also be an air curtain or a mesh between the FOUP and the EFEM which helps reduce the amount of humidity that enters the FOUP and improves yield.
893:. During this shortage caused by the COVID-19 pandemic, many semiconductor manufacturers banned employees from leaving company grounds. Many countries granted subsidies to semiconductor companies for building new fabrication plants or fabs. Many companies were affected by counterfeit chips. Semiconductors have become vital to the world economy and the national security of some countries. The US has asked TSMC to not produce semiconductors for Huawei, a Chinese company. CFET transistors were explored, which stacks NMOS and PMOS transistors on top of each other. Two approaches were evaluated for constructing these transistors: a monolithic approach which built both types of transistors in one process, and a sequential approach which built the two types of transistors separately and then stacked them.
712:
once, were developed to carry several wafers between process steps, but wafers had to be individually removed from the carrier, processed and returned to the carrier, so acid-resistant carriers were developed to eliminate this time consuming process, so the entire cassette with wafers was dipped into wet etching and wet cleaning tanks. When wafer sizes increased to 100 mm, the entire cassette would often not be dipped as uniformly, and the quality of the results across the wafer became hard to control. By the time 150 mm wafers arrived, the cassettes were not dipped and were only used as wafer carriers and holders to store wafers, and robotics became prevalent for handling wafers. With 200 mm wafers manual handling of wafer cassettes becomes risky as they are heavier.
2028:
defects. A particle needs to be 1/5 the size of a feature to cause a killer defect. So if a feature is 100 nm across, a particle only needs to be 20 nm across to cause a killer defect. Electrostatic electricity can also affect yield adversely. Chemical contaminants or impurities include heavy metals such as iron, copper, nickel, zinc, chromium, gold, mercury and silver, alkali metals such as sodium, potassium and lithium, and elements such as aluminum, magnesium, calcium, chlorine, sulfur, carbon, and fluorine. It is important for these elements to not remain in contact with the silicon, as they could reduce yield. Chemical mixtures may be used to remove these elements from the silicon; different mixtures are effective against different elements.
2024:
dust particles, however since the 1990s, yield degradation is mainly caused by process variation, the process itself and by the tools used in chip manufacturing, although dust still remains a problem in many older fabs. Dust particles have an increasing effect on yield as feature sizes are shrunk with newer processes. Automation and the use of mini environments inside of production equipment, FOUPs and SMIFs have enabled a reduction in defects caused by dust particles. Device yield must be kept high to reduce the selling price of the working chips since working chips have to pay for those chips that failed, and to reduce the cost of wafer processing. Yield can also be affected by the design and operation of the fab.
816:, thus the conventional notion of a process node has become blurred. Additionally, TSMC and Samsung's 10 nm processes are only slightly denser than Intel's 14 nm in transistor density. They are actually much closer to Intel's 14 nm process than they are to Intel's 10 nm process (e.g. Samsung's 10 nm processes' fin pitch is the exact same as that of Intel's 14 nm process: 42 nm). Intel has changed the name of its 10 nm process to position it as a 7 nm process. As transistors become smaller, new effects start to influence design decisions such as self-heating of the transistors, and other effects such as electromigration have become more evident since the 16 nm node.
1714:, creating dummy gates, manufacturing sources and drains by ion deposition and dopant annealing, depositing an "interlevel dielectric (ILD)" and then polishing, and removing the dummy gates to replace them with a metal whose workfunction depended on whether the transistor was NMOS or PMOS, thus creating the metal gate. A third process, full silicidation (FUSI) was not pursued due to manufacturing problems. Gate-first became dominant at the 22 nm/20 nm node. HKMG has been extended from planar transistors for use in FinFET and nanosheet transistors. Hafnium silicon oxynitride can also be used instead of hafnium oxide.
1978:
according to predetermined test limits such as maximum operating frequencies/clocks, number of working (fully functional) cores per chip, etc. The resulting binning data can be graphed, or logged, on a wafer map to trace manufacturing defects and mark bad chips. This map can also be used during wafer assembly and packaging. Binning allows chips that would otherwise be rejected to be reused in lower-tier products, as is the case with GPUs and CPUs, increasing device yield, especially since very few chips are fully functional (have all cores functioning correctly, for example).
1367:
834:: horizontal and vertical nanowires, horizontal nanosheet transistors (Samsung MBCFET, Intel Nanoribbon), vertical FET (VFET) and other vertical transistors, complementary FET (CFET), stacked FET, vertical TFETs, FinFETs with III-V semiconductor materials (III-V FinFET), several kinds of horizontal gate-all-around transistors such as nano-ring, hexagonal wire, square wire, and round wire gate-all-around transistors and negative-capacitance FET (NC-FET) which uses drastically different materials. FD-SOI was seen as a potential low cost alternative to FinFETs.
1464:. These ingots are then sliced into wafers about 0.75 mm thick and polished to obtain a very regular and flat surface. During the production process wafers are often grouped into lots, which are represented by a FOUP, SMIF or a wafer cassette, which are wafer carriers. FOUPs and SMIFs can be transported in the fab between machines and equipment with an automated OHT (Overhead Hoist Transport) AMHS (Automated Material Handling System). Besides SMIFs and FOUPs, wafer cassettes can be placed in a wafer box or a wafer carrying box.
827:(FinFETs), where the gate surrounds the channel on three sides, allowing for increased energy efficiency and lower gate delay—and thus greater performance—over planar transistors at the 22nm node, because planar transistors which only have one surface acting as a channel, started to suffer from short channel effects. A startup called SuVolta created a technology called Deeply Depleted Channel (DDC) to compete with FinFET transistors, which uses planar transistors at the 65 nm node which are very lightly doped.
1401:(FFUs) at regular intervals to constantly replace and filter the air in the cleanroom; semiconductor capital equipment may also have their own FFUs to clean air in the equipment's EFEM which allows the equipment to receive wafers in FOUPs. The FFUs, combined with raised floors with grills, help ensure a laminar air flow, to ensure that particles are immediately brought down to the floor and do not stay suspended in the air due to turbulence. The workers in a semiconductor fabrication facility are required to wear
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2117:
finished, packaged chips, are called the back end, post-fab, ATMP (Assembly, Test, Marking, and
Packaging) or ATP (Assembly, Test and Packaging) of semiconductor manufacturing, and may be carried out by OSAT (OutSourced Assembly and Test) companies which are separate from semiconductor foundries. A foundry is a company or fab performing manufacturing processes such as photolithography and etching that are part of the front end of semiconductor manufacturing.
46:
20:
797:'s 130 nm, 90 nm, 65 nm, 45 nm and 32 nm single, dual, quad, six and eight core processors made since 2001. During the transition from 200 mm to 300 mm wafers in 2001, many bridge tools were used which could process both 200 mm and 300 mm wafers. At the time, 18 companies could manufacture chips in the leading edge 130 nm process.
741:
wafers. The semiconductor industry has adopted larger wafers to cope with the increased demand for chips as larger wafers provide more surface area per wafer. Over time, the industry shifted to 300 mm wafers which brought along the adoption of FOUPs, but many products that are not advanced are still produced in 200 mm wafers such as analog ICs, RF chips, power ICs,
497:
is used as a measurement of area for different parts of a semiconductor device, based on the feature size of a semiconductor manufacturing process. Many semiconductor devices are designed in sections called cells, and each cell represents a small part of the device such as a memory cell to store data. Thus F is used to measure the area taken up by these cells or sections.
2036:
achieve the same functions of larger dies or surpass them, and smaller features require reduced process variation and increased purity (reduced contamination) to maintain high yields. Metrology tools are used to inspect the wafers during the production process and predict yield, so wafers predicted to have too many defects may be scrapped to save on processing costs.
1690:. Semiconductor equipment may have several chambers which process wafers in processes such as deposition and etching. Many pieces of equipment handle wafers between these chambers in an internal nitrogen or vacuum environment to improve process control. Wet benches with tanks containing chemical solutions were historically used for cleaning and etching wafers.
1808:
transistors, and an upper layer which is a tungsten plug that connects the transistors to the interconnect. Intel at the 10nm node introduced contact-over-active-gate (COAG) which, instead of placing the contact for connecting the transistor close to the gate of the transistor, places it directly over the gate of the transistor to improve transistor density.
1566:/resist ashing or by "wet" resist stripper chemistry. Wet etching was widely used in the 1960s and 1970s, but it was replaced by dry etching/plasma etching starting at the 10 micron to 3 micron nodes. This is because wet etching makes undercuts (etching under mask layers or resist layers with patterns). Dry etching has become the dominant etching technique.
746:
Materials introduced the
Producer, a cluster tool that had chambers grouped in pairs for processing wafers, which shared common vacuum and supply lines but were otherwise isolated, which was revolutionary at the time as it offered higher productivity than other cluster tools without sacrificing quality, due to the isolated chamber design.
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Tateshita, Y.; Wang, J.; Nagano, K.; Hirano, T.; Miyanami, Y.; Ikuta, T.; Kataoka, T.; Kikuchi, Y.; Yamaguchi, S.; Ando, T.; Tai, K.; Matsumoto, R.; Fujita, S.; Yamane, C.; Yamamoto, R.; Kanda, S.; Kugimiya, K.; Kimura, T.; Ohchi, T.; Yamamoto, Y.; Nagahama, Y.; Hagimoto, Y.; Wakabayashi, H.; Tagawa,
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The packaged chips are retested to ensure that they were not damaged during packaging and that the die-to-pin interconnect operation was performed correctly. A laser then etches the chip's name and numbers on the package. The steps involving testing and packaging of dies, followed by final testing of
2031:
Several models are used to estimate yield. They are Murphy's model, Poisson's model, the binomial model, Moore's model and Seeds' model. There is no universal model; a model has to be chosen based on actual yield distribution (the location of defective chips). For example, Murphy's model assumes that
2023:
Device yield or die yield is the number of working chips or dies on a wafer, given in percentage since the number of chips on a wafer (Die per wafer, DPW) can vary depending on the chips' size and the wafer's diameter. Yield degradation is a reduction in yield, which historically was mainly caused by
1589:
as it still required a separate furnace but ion implantation ultimately prevailed in the 1970s as it offers better reproducibility of results. Ion implantation is practical because of the high sensitivity of semiconductor devices to foreign atoms, as ion implantation does not deposit large numbers of
1417:
pods isolate the wafers from the air in the cleanroom, increasing yield because they reduce the number of defects caused by dust particles. Also, fabs have as few people as possible in the cleanroom to make maintaining the cleanroom environment easier, since people, even when wearing cleanroom suits,
736:
Until the 1980s, physical vapor deposition was the primary technique used for depositing materials onto wafers, until the advent of chemical vapor deposition. Equipment with diffusion pumps was replaced with those using turbomolecular pumps as the latter do not use oil which often contaminated wafers
496:
Feature size is determined by the width of the smallest lines that can be patterned in a semiconductor fabrication process, this measurement is known as the linewidth. Patterning often refers to photolithography which allows a device design or pattern to be defined on the device during fabrication. F
2965:
2193:
It is vital that workers not be directly exposed to these dangerous substances. The high degree of automation common in the IC fabrication industry helps to reduce the risks of exposure. Most fabrication facilities employ exhaust management systems, such as wet scrubbers, combustors, heated absorber
2035:
Smaller dies cost less to produce (since more fit on a wafer, and wafers are processed and priced as a whole), and can help achieve higher yields since smaller dies have a lower chance of having a defect, due to their lower surface area on the wafer. However, smaller dies require smaller features to
1807:
Since the 22 nm node, some manufacturers have added a new process called middle-of-line (MOL) which connects the transistors to the rest of the interconnect made in the BEoL process. The MOL is often based on tungsten and has upper and lower layers: the lower layer connects the junctions of the
711:
In the era of 2 inch wafers, these were handled manually using tweezers and held manually for the time required for a given process. Tweezers were replaced by vacuum wands as they generate fewer particles which can contaminate the wafers. Wafer carriers or cassettes, which can hold several wafers at
1885:
processing, which eliminates processing steps. As the number of interconnect levels increases, planarization of the previous layers is required to ensure a flat surface prior to subsequent lithography. Without it, the levels would become increasingly crooked, extending outside the depth of focus of
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also be used to remove materials isotropically, in all directions at the same time but without the capability to create vertical walls. Plasma ALE was initially adopted for etching contacts in transistors, and since the 7 nm node it is also used to create transistor structures by etching them.
901:
This is a list of processing techniques that are employed numerous times throughout the construction of a modern electronic device; this list does not necessarily imply a specific order, nor that all techniques are taken during manufacture as, in practice the order and which techniques are applied,
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200 mm diameter wafers were first used in 1990 for making chips. These became the standard until the introduction of 300 mm diameter wafers in 2000. Bridge tools were used in the transition from 150 mm wafers to 200 mm wafers and in the transition from 200 mm to 300 mm
1990:
Usually, the fab charges for testing time, with prices in the order of cents per second. Testing times vary from a few milliseconds to a couple of seconds, and the test software is optimized for reduced testing time. Multiple chip (multi-site) testing is also possible because many testers have the
1717:
Since the 16 nm/14 nm node, atomic layer etching (ALE) is increasingly used for etching as it offers higher precision than other etching methods. In production, plasma ALE is commonly used, which removes materials unidirectionally, creating structures with vertical walls. Thermal ALE can
1584:
and polysilicon. Doping consists of introducing impurities into the atomic structure of a semiconductor material, in order to modify its electrical properties. Initially thermal diffusion with furnaces at 900-1200°C with gases containing dopants were used for doping wafers and there was resistance
786:
semiconductor companies, outsourcing their production to companies like TSMC. They also have facilities spread in different countries. As the average utilization of semiconductor devices increased, durability became an issue and manufacturers started to design their devices to ensure they last for
2027:
Tight control over contaminants and the production process are necessary to increase yield. Contaminants may be chemical contaminants or be dust particles. "Killer defects" are those caused by dust particles that cause complete failure of the device (such as a transistor). There are also harmless
1894:
is still sometimes employed when the number of interconnect levels is no more than three. Copper interconnects use an electrically conductive barrier layer to prevent the copper from diffusing into ("poisoning") its surroundings, often made of tantalum nitride. In 1997, IBM was the first to adopt
1977:
with an electronic tester that presses tiny probes against the chip. The machine marks each bad chip with a drop of dye. Currently, electronic dye marking is possible if wafer test data (results) are logged into a central computer database and chips are "binned" (i.e. sorted into virtual bins)
1561:
image on the wafer using short-wavelength light; the exposed regions (for "positive" resist) are washed away by a developer solution. The wafer then undergoes etching where materials not protected by the mask are removed. After removal or other processing, the remaining photoresist is removed by
1982:
may be used to disconnect parts of chips such as cores, either because they did not work as intended during binning, or as part of market segmentation (using the same chip for low, mid and high-end tiers). Chips may have spare parts to allow the chip to fully pass testing even if it has several
1706:
is not compatible with polysilicon gates which requires the use of a metal gate. Two approaches were used in production: gate-first and gate-last. Gate-first consists of depositing the high-k dielectric and then the gate metal such as tantalum nitride whose workfunction depends on whether the
745:
and MEMS devices. Some processes such as cleaning, ion implantation, etching, annealing and oxidation started to adopt single wafer processing instead of batch wafer processing in order to improve the reproducibility of results. A similar trend existed in MEMS manufacturing. In 1998, Applied
1633:
A recipe in semiconductor manufacturing is a list of conditions under which a wafer will be processed by a particular machine in a processing step during manufacturing. Process variability is a challenge in semiconductor processing, in which wafers are not processed evenly or the quality or
2032:
yield loss occurs more at the edges of the wafer (non-working chips are concentrated on the edges of the wafer), Poisson's model assumes that defective dies are spread relatively evenly across the wafer, and Seeds's model assumes that defective dies are clustered together.
1898:
In 2014, Applied
Materials proposed the use of cobalt in interconnects at the 22 nm node, used for encapsulating copper interconnects in cobalt to prevent electromigration, replacing tantalum nitride since it needs to be thicker than cobalt in this application.
448:
nodes, fabrication can take up to 15 weeks, with 11–13 weeks being the industry average. Production in advanced fabrication facilities is completely automated, with automated material handling systems taking care of the transport of wafers from machine to machine.
1803:
BEoL has been used since 1995 at the 350 nm and 250 nm nodes (0.35 and 0.25 micron nodes), at the same time chemical mechanical polishing began to be employed. At the time, 2 metal layers for interconnect, also called metallization was state-of-the-art.
1693:
At the 90 nm node, transistor channels made with strain engineering were introduced to improve drive current in PMOS transistors by introducing regions with silicon-germanium in the transistor. The same was done in NMOS transistors at the 20 nm node.
555:
Initially transistor gate length was smaller than that suggested by the process node name (e.g. 350 nm node); however this trend reversed in 2009. Feature sizes can have no connection to the nanometers (nm) used in marketing. For example, Intel's former
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7024:
1946:
Once the front-end process has been completed, the semiconductor devices or chips are subjected to a variety of electrical tests to determine if they function properly. The percent of devices on the wafer found to perform properly is referred to as the
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nodes. GlobalFoundries has decided to stop the development of new nodes beyond 12 nanometers in order to save resources, as it has determined that setting up a new fab to handle sub-12 nm orders would be beyond the company's financial abilities.
1707:
transistor is NMOS or PMOS, polysilicon deposition, gate line patterning, source and drain ion implantation, dopant anneal, and silicidation of the polysilicon and the source and drain. In DRAM memories this technology was first adopted in 2015.
504:
has specific rules on the minimum size (width or CD/Critical
Dimension) and spacing for features on each layer of the chip. Normally a new semiconductor process has smaller minimum sizes and tighter spacing. In some cases, this allows a simple
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In 2007, HKMG (high-k/metal gate) transistors were introduced by Intel at the 45 nm node, which replaced polysilicon gates which in turn replaced metal gate (aluminum gate) technology in the 1970s. High-k dielectric such as hafnium oxide
2002:" to speed testing and reduce testing costs. In certain designs that use specialized analog fab processes, wafers are also laser-trimmed during testing, in order to achieve tightly distributed resistance values as specified by the design.
1844:), blanket films of aluminum are deposited first, patterned, and then etched, leaving isolated wires. Dielectric material is then deposited over the exposed wires. The various metal layers are interconnected by etching holes (called "
1783:
of chip fabrication, which refers to the packaging and testing stages). BEOL processing involves creating metal interconnecting wires that are isolated by dielectric layers. The insulating material has traditionally been a form of
2054:
Once tested, a wafer is typically reduced in thickness in a process also known as "backlap", "backfinish", "wafer backgrind" or "wafer thinning" before the wafer is scored and then broken into individual dies, a process known as
1598:(RTA) to activate the dopants. Annealing was initially done at 500 to 700°C, but this was later increased to 900 to 1100°C. Implanters can either process a single wafer at a time or several, up to 17, mounted on a rotating disk.
1864:(DRAM), because the number of interconnect levels can be small (no more than four). The aluminum was sometimes alloyed with copper for preventing recrystallization. Gold was also used in interconnects in early chips.
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After the dies are tested for functionality and binned, they are packaged. Plastic or ceramic packaging involves mounting the die, connecting the die/bond pads to the pins on the package, and sealing the die. Tiny
7013:
2078:
are used to connect the pads to the pins. In the 'old days' (1970s), wires were attached by hand, but now specialized machines perform the task. Traditionally, these wires have been composed of gold, leading to a
1986:
Chips are also tested again after packaging, as the bond wires may be missing, or analog performance may be altered by the package. This is referred to as the "final test". Chips may also be imaged using x-rays.
1123:(for complete photoresist removal/photoresist stripping, also known as dry strip, historically done with a chemical solvent called a resist stripper, to allow wafers to undergo another round of photolithography)
4200:
1923:
of photoresist and other coatings. Wafer metrology equipment/tools, or wafer inspection tools are used to verify that the wafers haven't been damaged by previous processing steps up until testing; if too many
803:
Since 2009, "node" has become a commercial name for marketing purposes that indicates new generations of process technologies, without any relation to gate length, metal pitch or gate pitch. For example,
1389:, semiconductor purity was not as big of an issue as it is today in device manufacturing. In the 1960s, workers could work on semiconductor devices in street clothing. As devices become more integrated,
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Frank, M. M. (2011). High-k / metal gate innovations enabling continued CMOS scaling. 2011 Proceedings of the
European Solid-State Device Research Conference (ESSDERC). doi:10.1109/essderc.2011.6044239
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size of 17.92 mm. The yield went down to 32.0% with an increase in die size to 100 mm. The number of killer defects on a wafer, regardless of die size, can be noted as the defect density (or D
1686:
technology involves the insertion of an insulating layer between the raw silicon wafer and the thin layer of subsequent silicon epitaxy. This method results in the creation of transistors with reduced
1958:
The yield is often but not necessarily related to device (die or chip) size. As an example, in
December 2019, TSMC announced an average yield of ~80%, with a peak yield per wafer of >90% for their
718:
In 1984, KLA developed the first automatic reticle and photomask inspection tool. In 1985, KLA developed an automatic inspection tool for silicon wafers, which replaced manual microscope inspection.
5533:
715:
In the 1970s, several companies migrated their semiconductor manufacturing technology from bipolar to CMOS technology. Semiconductor manufacturing equipment has been considered costly since 1978.
7257:
1702:) replaced silicon oxynitride (SiON), in order to prevent large amounts of leakage current in the transistor while allowing for continued scaling or shrinking of the transistors. However HfO
6293:
Robertson, J., & Wallace, R. M. (2015). High-K materials and metal gates for CMOS applications. Materials
Science and Engineering: R: Reports, 88, 1–41. doi:10.1016/j.mser.2014.11.001
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by humans. To increase yield, FOUPs and semiconductor capital equipment may have a mini environment with ISO class 1 level of dust, and FOUPs can have an even cleaner micro environment.
1744:), patterning of the gate, patterning of the source and drain regions, and subsequent implantation or diffusion of dopants to obtain the desired complementary electrical properties. In
733:
devices. It can also be made with
Bipolar, CMOS and DMOS devices. Applied Materials developed the first practical multi chamber, or cluster wafer processing tool, the Precision 5000.
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509:
of a currently produced chip design to reduce costs, improve performance, and increase transistor density (number of transistors per unit area) without the expense of a new design.
1779:, they must be interconnected to form the desired electrical circuits. This occurs in a series of wafer processing steps collectively referred to as BEOL (not to be confused with
1478:
In semiconductor device fabrication, the various processing steps fall into four general categories: deposition, removal, patterning, and modification of electrical properties.
996:
Development (removal of parts of the resist by application of a liquid developer, leaving only parts of the wafer exposed for ion implantation, layer deposition, etching, etc)
357:
3120:
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Löper, Philipp; Stuckelberger, Michael; Niesen, Bjoern; Werner, Jérémie; Filipič, Miha; Moon, Soo-Jin; Yum, Jun-Ho; Topič, Marko; De Wolf, Stefaan; Ballif, Christophe (2015).
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More recently, as the number of interconnect levels for logic has substantially increased due to the large number of transistors that are now interconnected in a modern
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with filtered air to remove even the smallest particles, which could come to rest on the wafers and contribute to defects. The ceilings of semiconductor cleanrooms have
4168:
552:) has become more of a marketing term that has no standardized relation with functional feature sizes or with transistor density (number of transistors per unit area).
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Wafer size has grown over time, from 25 mm in 1960, to 50 mm in 1969, 100 mm in 1976, 125 mm in 1981, 150 mm in 1983 and 200 mm in 1992.
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2109:, like most packages, is many times larger than the actual die hidden inside, whereas CSP chips are nearly the size of the die; a CSP can be constructed for each die
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Huff, Howard R.; Goodall, Randal K.; Bullis, W. Murray; Moreland, James A.; Kirscht, Fritz G.; Wilson, Syd R.; The NTRS Starting
Materials Team (24 November 1998).
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materials, also called low-κ dielectrics, are being used (such as silicon oxycarbide), typically providing dielectric constants around 2.7 (compared to 3.82 for SiO
6435:"High-Performance and Low-Power CMOS Device Technologies Featuring Metal/High-k Gate Stacks with Uniaxial Strained Silicon Channels on (100) and (110) Substrates"
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Progress of miniaturization, and comparison of sizes of semiconductor manufacturing process nodes with some microscopic objects and visible light wavelengths
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1951:. Manufacturers are typically secretive about their yields, but it can be as low as 30%, meaning that only 30% of the chips on the wafer work as intended.
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450mm FOUP/LPU system in advanced semiconductor manufacturing processes: A study on the minimization of oxygen content inside FOUP when the door is opened
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Hendrik
Purwins; Bernd Barak; Ahmed Nagi; Reiner Engel; Uwe Höckele; Andreas Kyek; Srikanth Cherla; Benjamin Lenz; Günter Pfeifer; Kurt Weinzierl (2014).
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5291:"Characterization of thin carbonized photoresist layer and investigation of dry strip process through real-time monitored variable temperature control"
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By 2018, a number of transistor architectures had been proposed for the eventual replacement of FinFET, most of which were based on the concept of
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is one among many reasons for low yield. Testing is carried out to prevent faulty chips from being assembled into relatively expensive packages.
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process chips in mass production by TSMC and Samsung, although their 7 nanometer node definition is similar to Intel's 10 nanometer process. The
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2553:. 2015 Joint e-Manufacturing and Design Collaboration Symposium (eMDC) & 2015 International Symposium on Semiconductor Manufacturing (ISSM).
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to the silicon epitaxy step, tricks are performed to improve the performance of the transistors to be built. One method involves introducing a
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906:(IDM) for their own products, and a semiconductor device might not need all techniques. Equipment for carrying out these processes is made by
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over the next several years. Many early semiconductor device manufacturers developed and built their own equipment such as ion implanters.
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6847:"Complex Refractive Index Spectra of CH3NH3PbI3 Perovskite Thin Films Determined by Spectroscopic Ellipsometry and Spectrophotometry"
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Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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2709:"A Numerical Study on the Effects of Purge and Air Curtain Flow Rates on Humidity Invasion Into a Front Opening Unified Pod (FOUP)"
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enough time, and this depends on the market the device is designed for. This especially became a problem at the 10 nm node.
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The next major transistor innovation was the introduction of FinFET (tri-gate) transistors on Intel's 22-nm technology in 2011.
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2751:"Performance of Different Front-Opening Unified Pod (FOUP) Moisture Removal Techniques With Local Exhaust Ventilation System"
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through four layers of planarized copper interconnect, down to the polysilicon (pink), wells (greyish) and substrate (green)
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has been used to predict wafer properties based on statistical methods without performing the physical measurement itself.
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Trim and form (separates the lead frames from each other, and bends the lead frame's pins so that they can be mounted on a
1236:
1205:
890:
581:
58:
7077:
https://www.st.com/resource/en/application_note/cd00003986-introduction-to-semiconductor-technology-stmicroelectronics.pdf
5354:
4995:
https://www.st.com/resource/en/application_note/cd00003986-introduction-to-semiconductor-technology-stmicroelectronics.pdf
3832:
2749:
Lin, Tee; Ali Zargar, Omid; Juina, Oscar; Lee, Tzu-Chieh; Sabusap, Dexter Lyndon; Hu, Shih-Cheng; Leggett, Graham (2020).
800:
In 2006, 450 mm wafers were expected to be adopted in 2012, and 675 mm wafers were expected to be used by 2021.
5327:
5165:"An Investigation of Edge Bead Removal Width Variability, Effects and Process Control in Photolithographic Manufacturing"
5010:
3616:
3491:
846:
5111:
4006:
3385:
5693:
5659:
4906:
3693:
3359:
2928:
2707:
Benalcazar, David; Lin, Tee; Hu, Ming-Hsuan; Ali Zargar, Omid; Lin, Shao-Yu; Shih, Yang-Cheng; Leggett, Graham (2022).
1817:
1229:
or wafer bonding and stacking, this can also occur during wafer dicing, in a process known as Dice Before Grind or DBG)
910:. All equipment needs to be tested before a semiconductor fabrication plant is started. These processes are done after
456:
as they are pieces diced from a single wafer. Individual dies are separated from a finished wafer in a process called
1871:, the timing delay in the wiring has become so significant as to prompt a change in wiring material (from aluminum to
1528:
6913:
6454:
3187:
1952:
1887:
1532:
1311:
Molding (using special plastic molding compound that may contain glass powder as filler to control thermal expansion)
4616:"7nm, 5nm, 3nm: The new materials and transistors that will take us to the limits of Moore's law | Extremetech"
1485:
is any process that grows, coats, or otherwise transfers a material onto the wafer. Available technologies include
548:". However, this has not been the case since 1994, and the number of nanometers used to name process nodes (see the
6387:
3425:
1752:
are also fabricated at this time, typically stacked above the access transistor (the now defunct DRAM manufacturer
1524:
5904:
4425:
758:
is a global business today. The leading semiconductor manufacturers typically have facilities all over the world.
4764:
2870:
1353:
632:
429:
2566:"Moisture Prevention in a Pre-Purged Front-Opening Unified Pod (FOUP) During Door Opening in a Mini-Environment"
1630:. Modern chips have up to eleven or more metal levels produced in over 300 or more sequenced processing steps.
7159:
6817:
6020:"History of Some Early Developments in Ion-Implantation Technology Leading to Silicon Transistor Manufacturing"
5769:
5229:
4734:
2990:
914:. A semiconductor fab operates 24/7 and many fabs use large amounts of water, primarily for rinsing the chips.
903:
7056:
5795:
Li, Jinmin; Wang, Junxi; Yi, Xiaoyan; Liu, Zhiqiang; Wei, Tongbo; Yan, Jianchang; Xue, Bin (August 31, 2020).
5392:"Laser Lift-Off(LLO) Ideal for high brightness vertical LED manufacturing - Press Release - DISCO Corporation"
4601:
4024:
3570:
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)
7282:
4117:
3239:
1174:
7132:
5950:"1954: Diffusion Process Developed for Transistors | the Silicon Engine | Computer History Museum"
3439:
2900:
1920:
5634:
5244:
3860:"Understanding the Impact of Batch vs. Single Wafer in Thermal Processing Using Cost of Ownership Analysis"
3630:
3525:
2068:
1861:
1745:
7206:
4587:
4545:
4517:
1618:, which can be carried out to create semiconductor-insulator junctions, such as in the local oxidation of
721:
In 1985, STmicroelectronics invented BCD, also called BCDMOS, a semiconductor manufacturing process using
3799:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2280:
1656:. The raw wafer is engineered by the growth of an ultrapure, virtually defect-free silicon layer through
824:
722:
1648:
Wafer processing is separated into FEOL and BEOL stages. FEOL processing refers to the formation of the
6831:
4531:
4250:
3511:
3255:
1056:
1011:
6615:
290:
6989:
1877:
layer) alongside a change in dielectric material in the interconnect (from silicon dioxides to newer
1853:
1776:
1490:
1486:
1090:
1070:
1032:
911:
564:
fins) with a width of 7 nm, so the Intel 10 nm process is similar in transistor density to
470:
Companies that manufacture machines used in the industrial semiconductor fabrication process include
7252:
6359:
6135:
5877:
5823:
4221:
3412:"The Inside Story of Texas Instruments' Biggest Blunder: The TMS9900 Microprocessor - IEEE Spectrum"
3019:
2627:
1882:
6345:
4851:"Countries lavish subsidies and perks on semiconductor manufacturers as a global chip war heats up"
4222:"Exclusive: Is Intel Really Starting To Lose Its Process Lead? 7nm Node Slated For Release in 2022"
1963:
1925:
1431:
1184:
1135:
Millisecond thermal processing, millisecond anneal, millisecond processing, flash lamp anneal (FLA)
453:
7185:
https://www.semiconductor-digest.com/abating-potentially-dangerous-particles-2-5m-and-smaller/amp/
7121:
https://www.csis.org/analysis/mapping-semiconductor-supply-chain-critical-role-indo-pacific-region
7099:
https://www.electronicsb2b.com/industry-buzz/invest/atmps-founding-stone-indias-semiconductor-era/
5554:
4889:
2508:. 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014). pp. 120–124.
6067:
5504:
5420:
5360:
4797:"Taiwan chipmakers keep workers 'imprisoned' in factories to keep up with global pandemic demand"
4704:
4359:
4054:
3292:
3115:
2323:
2015:
combined with the extremes of fab processing steps). Most designs cope with at least 64 corners.
1928:
on one wafer have failed, the entire wafer is scrapped to avoid the costs of further processing.
1860:; this approach can still be (and often is) used in the fabrication of many memory chips such as
1502:
1449:
1084:
659:
624:
463:
Within fabrication plants, the wafers are transported inside special sealed plastic boxes called
6724:
5208:
4092:
2842:
Lambrechts, Wynand; Sinha, Saurabh; Abdallah, Jassem Ahmed; Prinsloo, Jaco (13 September 2018).
881:
million transistors per square millimeter. In 2019, Samsung and TSMC announced plans to produce
762:, the world's largest manufacturer of semiconductors, has facilities in South Korea and the US.
6723:
Materials: Recent Advances". In Baklanov, Mikhail R.; Ho, Paul S.; Zschech, Ehrenfried (eds.).
5686:"Wafer Cleaning Procedures; Photoresist or Resist Stripping; Removal of Films and Particulates"
3290:
Mueller, C. W.; Robinson, P. H. (December 1964). "Grown-film silicon transistors on sapphire".
2670:. 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). pp. 6–11.
2622:
2258:
1836:
1731:
1498:
1299:
1109:
755:
593:
589:
572:. As another example, GlobalFoundries' 12 and 14 nm processes have similar feature sizes.
422:
325:
4920:
4378:
3173:
1680:
becomes stretched somewhat, resulting in improved electronic mobility. Another method, called
4643:
4308:
4279:
4191:"14nm, 7nm, 5nm: How low can CMOS go? It depends if you ask the engineers or the economists…"
4145:
2163:
2012:
1857:
1523:
is any process that removes material from the wafer; examples include etch processes (either
1437:
1343:
1250:
678:(metal–oxide–semiconductor field-effect transistor) using the silicon-on-sapphire process at
374:
6900:
3472:. 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
6771:
5058:
5044:
4834:
3806:
3264:
3253:
Manasevit, H. M.; Simpson, W. J. (1964). "Single-Crystal Silicon on a Sapphire Substrate".
2465:
2106:
1682:
1595:
1573:
1246:
1130:
1038:
1026:
790:
300:
7088:
https://www.3dincites.com/2009/04/the-post-fab-process-debate-for-3d-ics-foundry-or-osats/
4410:
2359:"Regression Methods for Virtual Metrology of Layer Thickness in Chemical Vapor Deposition"
1711:
8:
6373:
5449:
4977:
4855:
3859:
1873:
1634:
effectiveness of processes carried out on a wafer are not even across the wafer surface.
1603:
1545:. For example, in conventional lithography, the wafer is coated with a chemical called a
1461:
1427:
1366:
1291:
1201:
1061:
971:
759:
651:
647:
410:
406:
7196:
https://19january2017snapshot.epa.gov/sites/production/files/2015-06/documents/solid.pdf
6775:
6315:
Gate-first high-k/metal gate DRAM technology for low power and high performance products
5062:
3810:
3268:
3149:(February 1963). "Nanowatt logic using field-effect metal-oxide semiconductor triodes".
2607:
2469:
1991:
resources to perform most or all of the tests in parallel and on several chips at once.
1878:
1793:
1607:
1602:
Modification of electrical properties now also extends to the reduction of a material's
766:, the second-largest manufacturer, has facilities in Europe and Asia as well as the US.
6930:
6794:
6759:
6570:
6505:
6460:
6346:"Integrating high-k /metal gates: gate-first or gate-last? | Semiconductor Digest"
6327:
6276:
6117:
5966:
Semiconductor Microchips and Fabrication: A Practical Guide to Theory and Manufacturing
5184:
4496:
3962:
3775:
3581:
2770:
2728:
2689:
2632:
2585:
2527:
2378:
2207:
2102:
2045:
1999:
1218:
961:
870:
869:
process began being produced by Samsung in 2018. As of 2019, the node with the highest
597:
382:
378:
5391:
4907:"VLSI Symposium - TSMC and Imec on Advanced Process and Devices Technology Toward 2nm"
4073:
3453:
460:, also called wafer dicing. The dies can then undergo further assembly and packaging.
7165:
6909:
6866:
6799:
6738:
6705:
6685:
6659:
6595:
6560:
6495:
6450:
6393:
6242:
6215:
6189:
6162:
6083:
5970:
5929:
5883:
5856:
5829:
5802:
5775:
5748:
5721:
5665:
5364:
5333:
5306:
5188:
5143:
5117:
5113:
Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11
5016:
4957:
3966:
3926:
3838:
3699:
3585:
3545:
3391:
3365:
3325:
3321:
Extending Moore's Law through Advanced Semiconductor Design and Processing Techniques
3183:
2876:
2849:
2845:
Extending Moore's Law through Advanced Semiconductor Design and Processing Techniques
2822:
2795:
2774:
2732:
2679:
2517:
2481:
2186:
2174:
1929:
1800:), although materials with constants as low as 2.2 are being offered to chipmakers.
1727:
1673:
1611:
1510:
1473:
1146:
929:
850:
541:
475:
402:
6509:
6464:
6331:
6280:
5604:
3779:
2636:
2589:
2382:
1911:
in between the various processing steps. For example, thin film metrology based on
108:
7287:
6858:
6789:
6779:
6730:
6574:
6552:
6487:
6442:
6414:
6319:
6268:
6121:
6109:
6075:
6034:
6000:
5298:
5176:
5066:
4765:"GlobalFoundries Stops All 7nm Development: Opts To Focus on Specialized Processes"
4629:
4500:
4488:
3954:
3902:
3871:
3814:
3767:
3671:
3573:
3473:
3301:
3272:
3154:
3151:
1963 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
2762:
2720:
2693:
2671:
2577:
2531:
2509:
2473:
2370:
2333:
2318:
2301:
2246:
1586:
1542:
1541:
is the shaping or altering of deposited materials, and is generally referred to as
1414:
1305:
1001:
976:
939:
679:
398:
315:
304:
285:
6706:"Introduction to Copper / Low-K Interconnects & Electromigration Fundamentals"
4657:
4131:
1919:
is used to tightly control the thickness of gate oxide, as well as the thickness,
1756:
implemented these capacitors with trenches etched deep into the silicon surface).
1008:
are embedded in the wafer creating regions of increased or decreased conductivity)
640:
81:
72:
6079:
5742:
2049:
2007:
1741:
1737:
1677:
1457:
1398:
1261:
1196:
933:
805:
457:
386:
330:
5163:
Reiter, Tamas; McCann, Michael; Connolly, James; Haughey, Sean (February 2022).
3720:
2356:
117:
99:
90:
6635:
6544:
6523:
6491:
6479:
6434:
6433:
Y.; Tsukamoto, M.; Iwamoto, H.; Saito, M.; Kadomura, S.; Nagashima, N. (2006).
6313:
6262:
6103:
5290:
5164:
3890:
3818:
3664:"Model-based silicon wafer criteria for optimal integrated circuit performance"
3492:"Three Chips in One: The History of the BCD Integrated Circuit - IEEE Spectrum"
3477:
3467:
3158:
2750:
2708:
2665:
2565:
2548:
2503:
2374:
2358:
2328:
2099:
packaging can be used to place bond pads across the entire surface of the die.
1890:) is the primary processing method to achieve such planarization, although dry
1868:
1789:
1591:
1494:
1445:
1402:
1394:
1317:
1283:(The die is attached to a leadframe using conductive paste or die attach film.)
1280:
1188:
1168:
1141:
1020:
858:
585:
479:
414:
310:
153:
147:
141:
135:
129:
123:
7262:
7224:
Digital Integrated Circuit Design, from VLSI Architectures to CMOS Fabrication
6734:
6556:
6323:
6272:
6113:
6108:. The 2006 IEEE International Joint Conference on Neural Network Proceedings.
5302:
3958:
3946:
3759:
3565:
2818:
Fundamental Principles of Optical Lithography: The Science of Microfabrication
2675:
2513:
1907:
The highly serialized nature of wafer processing has increased the demand for
1886:
available lithography, and thus interfering with the ability to pattern. CMP (
1822:
1460:) up to 300 mm (slightly less than 12 inches) in diameter using the
7271:
6446:
6360:"IEDM 2009: HKMG gate-first vs gate-last options | Semiconductor Digest"
6004:
5180:
4560:"Intel's Stacked Nanosheet Transistors Could be the Next Step in Moore's Law"
4251:"Life at 10nm. (Or is it 7nm?) And 3nm - Views on Advanced Silicon Platforms"
3889:
Weimer, R.A.; Eppich, D.M.; Beaman, K.L.; Powell, D.C.; Gonzalez, F. (2003).
3794:
3577:
3146:
3142:
2766:
2724:
2581:
2485:
2263:
2182:
1974:
1941:
1916:
1827:
1563:
1406:
1232:
1180:
1120:
813:
771:
620:
616:
557:
545:
320:
225:
216:
207:
198:
189:
180:
171:
162:
7109:
5685:
5295:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
4492:
3906:
3771:
3599:
2095:. Tradidionally the bond pads are located on the edges of the die, however,
1441:
666:). In 1964, he published his findings with colleague William Simpson in the
6870:
6803:
5999:. 2018 22nd International Conference on Ion Implantation Technology (IIT).
4872:"China import concerns spur US to launch semiconductor supply chain review"
3764:
Proceedings of 11th International Conference on Ion Implantation Technology
3305:
2075:
2056:
1912:
1881:
insulators). This performance enhancement also comes at a reduced cost via
1661:
1287:
1275:
1268:
842:
838:
569:
483:
471:
441:
437:
270:
252:
243:
234:
5450:"Product Information | DBG / Package Singulation - DISCO Corporation"
4093:"Chip Architect: Intel and Motorola/AMD's 130 nm processes to be revealed"
1221:
and polishing (reduces the thickness of the wafer for thin devices like a
4195:
3875:
3649:"Novellus offers 300-mm CVD tool that's smaller than 200-mm, lower costs"
3218:
3216:
3214:
3212:
3210:
2194:
cartridges, etc., to control the risk to workers and to the environment.
2178:
2131:
Many toxic materials are used in the fabrication process. These include:
1547:
1360:
1226:
1212:
1016:
882:
866:
862:
702:
512:
Early semiconductor processes had arbitrary names for generations (viz.,
445:
4830:"What are semiconductors, and why are they vital to the global economy?"
3760:"Manufacturing advantages of single wafer high current ion implantation"
2454:"Die singulation technologies for advanced packaging: A critical review"
902:
are often specific to process offerings by foundries, or specific to an
7207:
https://cleanroomtechnology.com/hi-tech-without-costing-the-earth-55605
6784:
4602:"Transistors will stop shrinking in 2021, but Moore's law will live on"
4479:
Bohr, Mark T.; Young, Ian A. (2017). "CMOS Scaling Trends and Beyond".
2606:
Kure, Tokuo; Hanaoka, Hideo; Sugiura, Takumi; Nakagawa, Shinya (2007).
2148:
2080:
1995:
1749:
1649:
1386:
1325:
690:
655:
537:
533:
506:
433:
390:
53:
24:
6862:
5070:
3276:
3207:
2477:
2166:, used in CVD deposition of tungsten in transistor interconnects, and
6956:
6038:
5352:
5093:"Wafer Cleaning Becomes Key Challenge In Manufacturing 3D Structures"
4769:
4677:
4343:
4025:"Top 10 Worldwide Semiconductor Sales Leaders - Q1 2017 - AnySilicon"
3055:
2312:
2219:
2159:
2096:
1908:
1615:
1558:
1390:
1380:
1333:
1295:
1257:
1222:
993:
Post Exposure Baking (PEB) improves the durability of the photoresist
944:
520:
III/III-E/IV/V). Later each new generation process became known as a
6846:
5497:"Electro Conductive Die Attach Film(Under Development) | Nitto"
5045:"A Theoretical Analysis of Wafer Cleaning Using a Cryogenic Aerosol"
3675:
2453:
432:, also called foundries or "fabs", with the central part being the "
7231:
7048:
3744:
3740:"The future of batch and single-wafer processing in wafer cleaning"
3566:"The world's first 300 mm fab at Infineon - challenges and success"
3020:"Intel 10nm isn't bigger than AMD 7nm, you're just measuring wrong"
2144:
1849:
854:
779:
775:
5605:"The ASYST SMIF system - Integrated with the Tencor Surfscan 7200"
3891:"Contrasting single-wafer and batch processing for memory devices"
3454:"KLA 2020 - the tool that sparked the yield management revolution"
1676:(SiGe) is deposited. Once the epitaxial silicon is deposited, the
45:
6818:"Ibm's Development of Copper Interconnect for Integrated Circuit"
3345:
2505:
Advanced FOUP purge using diffusers for FOUP door-off application
2140:
2136:
1753:
1657:
1653:
1619:
1553:
1104:
990:
Exposure (in a photolithography stepper, scanner or mask aligner)
925:
783:
418:
4518:"Start-up Seeks New Life for Planar Transistors - IEEE Spectrum"
405:, thin-film deposition, ion-implantation, etching) during which
7263:
Designing a Heated Chuck for Semiconductor Processing Equipment
6484:
2007 International Workshop on Physics of Semiconductor Devices
5798:
III-Nitrides Light Emitting Diodes: Technology and Applications
4339:"Intel's Process Roadmap to 2025: With 4nm, 3nm, 20A and 18A?!"
3469:
0.18um BCD technology with best-in-class LDMOS from 6 V to 45 V
2841:
2251:
2234:
2167:
2155:
2084:
1627:
1614:
in UV processing (UVP). Modification is frequently achieved by
1321:
1005:
831:
742:
698:
675:
663:
608:
561:
452:
A wafer often has several integrated circuits which are called
6844:
3981:"Single Wafer vs Batch Wafer Processing in MEMS Manufacturing"
1590:
atoms. Doping processes with ion implantation are followed by
6267:. 2012 SEMI Advanced Semiconductor Manufacturing Conference.
6235:
Nathan, Arokia; Saha, Samar K.; Todi, Ravi M. (August 2023).
4673:"Samsung Completes Development of 5nm EUV Process Technology"
3051:"Intel's 10nm Cannon Lake and Core i3-8121U Deep Dive Review"
2452:
Lei, Wei-Sheng; Kumar, Ajay; Yalamanchili, Rao (2012-04-06).
2285:
2091:
is poisonous, so lead-free "lead frames" are now mandated by
1994:
Chips are often designed with "testability features" such as
1979:
1623:
1514:
1506:
1453:
1151:
820:
763:
730:
686:
517:
19:
6952:"Early TSMC 5nm Test Chip Yields 80%, HVM Coming in H1 2020"
6655:
Chemical-Mechanical Planarization of Semiconductor Materials
3951:
1992 Symposium on VLSI Technology Digest of Technical Papers
2667:
FOUP purge performance improvement using EFEM flow converter
2564:
Lin, Tee; Fu, Ben-Ran; Hu, Shih-Cheng; Tang, Yi-Han (2018).
1505:(ALD) among others. Deposition can be understood to include
981:
Photoresist coating (often as a liquid, on the entire wafer)
6528:
6318:. 2015 IEEE International Electron Devices Meeting (IEDM).
6140:
6105:
Virtual Metrology Technique for Semiconductor Manufacturing
5162:
4815:"Chip shortages lead to more counterfeit chips and devices"
4712:
4455:"Intel's Tri-Gate transistors: everything you need to know"
3496:
3111:"1963: Complementary MOS Circuit Configuration is Invented"
3082:"VLSI 2018: GlobalFoundries 12nm Leading-Performance, 12LP"
2404:"8 Things You Should Know About Water & Semiconductors"
2352:
2350:
2306:
2239:
2088:
1765:
1736:
Front-end surface engineering is followed by growth of the
1643:
1410:
1240:
809:
767:
726:
694:
612:
565:
513:
464:
428:
The fabrication process is performed in highly specialized
394:
295:
6719:
Dubois, Geraud; Volksen, Willi (February 24, 2012). "Low-
5421:"Product Information | Polishers - DISCO Corporation"
4921:"Power outage partially halts Toshiba Memory's chip plant"
4007:"Applied Materials Producer - a new revolution is upon us"
3795:"Approaches to single wafer high current ion implantation"
2605:
1418:
shed large amounts of particles, especially when walking.
1374:
1211:
Wafer mounting (wafer is mounted onto a metal frame using
774:, has facilities in Taiwan, China, Singapore, and the US.
436:". In more advanced semiconductor devices, such as modern
6431:
6136:"The Threat of Semiconductor Variability - IEEE Spectrum"
6068:"Ion implantation in CMOS Technology: Machine Challenges"
5570:
5568:
5555:"From a Slice of Crystal to an IC Wafer - CHM Revolution"
5326:
Einspruch, Norman G.; Brown, Dale M. (December 1, 2014).
4118:"'Bridge tools' appear to be taking over 300-mm movement"
3661:
2706:
2127:
Health hazards in semiconductor manufacturing occupations
1959:
1393:
must become even cleaner. Today, fabrication plants are
1329:
1161:
794:
685:
Semiconductor device manufacturing has since spread from
628:
5661:
Microlithography: Science and Technology, Second Edition
5289:
Ryu, Je Hyeok; Kim, Byoung Hoon; Yoon, Sung Jin (2017).
3888:
2995:
IEEE Spectrum: Technology, Engineering, and Science News
2347:
16:
Manufacturing process used to create integrated circuits
6760:"Recent Advances in Barrier Layer of Cu Interconnects"
6588:
Widmann, D.; Mader, H.; Friedrich, H. (9 March 2013).
5565:
5268:"Ion beam deposition goes 300mm with Aviza's new tool"
3105:
3103:
2901:"Die shrink: How Intel scaled-down the 8086 processor"
2894:
2892:
2608:"Clean-room Technologies for the Mini-environment Age"
2197:
1637:
631:
in the late 1960s. RCA commercially used CMOS for its
6587:
6214:. World Scientific Publishing Company. 3 March 2008.
5852:
Fundamentals of Layout Design for Electronic Circuits
3695:
Wafer Fabrication: Automatic Material Handling System
2748:
2309:(SEMI) — the semiconductor industry trade association
1759:
6908:. Integrated Circuit Engineering Corporation. 1997.
6155:
Nishi, Yoshio; Doering, Robert (December 19, 2017).
5905:"Highly Selective Etch Rolls Out For Next-Gen Chips"
2991:"A Better Way To Measure Progress in Semiconductors"
2451:
1183:(where the electrical performance is verified using
6888:
6886:
5479:"Plasma Dicing (Dice Before Grind) | Orbotech"
5245:"Unlocking the Potential of Molecular Beam Epitaxy"
5042:
4574:"Nanowire Transistors Could Keep Moore's Law Alive"
4426:"Intel's Revolutionary 22 nm Transistor Technology"
3387:
Wafer Fabrication: Factory Performance and Analysis
3100:
2889:
2788:Nishi, Yoshio; Doering, Robert (19 December 2017).
2307:
Semiconductor Equipment and Materials International
2276:
International Technology Roadmap for Semiconductors
1385:When feature widths were far greater than about 10
550:
International Technology Roadmap for Semiconductors
7239:Handbook of Semiconductor Manufacturing Technology
6264:High-k/metal gates in leading edge silicon devices
6158:Handbook of Semiconductor Manufacturing Technology
5849:Lienig, Jens; Scheible, Juergen (March 19, 2020).
5353:Verhaverbeke, S.; Beaudry, C.; Boelen, P. (2004).
4055:"Transistor Aging Intensifies At 10/7nm And Below"
2791:Handbook of Semiconductor Manufacturing Technology
2439:Handbook of Semiconductor Manufacturing Technology
2005:Good designs try to test and statistically manage
1848:") in the insulating material and then depositing
5009:Reinhardt, Karen; Kern, Werner (March 16, 2018).
2105:(CSP) is another packaging technology. A plastic
1834:Historically, the metal wires have been composed
1775:Once the various semiconductor devices have been
693:in the 1960s to the rest of the world, including
401:and physico-chemical process (with steps such as
7269:
6935:: CS1 maint: bot: original URL status unknown (
6883:
5635:"How a Chip Gets Made: Visiting GlobalFoundries"
5626:
5356:Aqueous Single Pass Single Wafer AI/Via Cleaning
5169:IEEE Transactions on Semiconductor Manufacturing
4411:"Foundries Rush 3-D Transistors - IEEE Spectrum"
3895:IEEE Transactions on Semiconductor Manufacturing
3252:
2755:IEEE Transactions on Semiconductor Manufacturing
2713:IEEE Transactions on Semiconductor Manufacturing
2570:IEEE Transactions on Semiconductor Manufacturing
2225:Glossary of microelectronics manufacturing terms
6902:Cost Effective Integrated Circuit Manufacturing
6549:2007 IEEE Custom Integrated Circuits Conference
5993:Review of Major Innovations in Beam Line Design
4978:"Water Scarcity and the Semiconductor Industry"
4890:"US urges Taiwan to curb chip exports to China"
3289:
2011:(extremes of silicon behavior caused by a high
1308:or integrated heat spreader (IHS) installation
6480:"High-k/Metal Gates- from research to reality"
6234:
5848:
5325:
3857:
3246:
3223:Rubin, Leonard; Poate, John (June–July 2003).
2059:. Only the good, unmarked chips are packaged.
984:Photoresist baking (solidification in an oven)
650:was the first to document epitaxial growth of
6832:"Cobalt Encapsulation Extends Copper to 10nm"
6757:
6718:
6545:"High-K/Metal Gate Technology: A New Horizon"
5771:Plasma Etching: Fundamentals and Applications
5717:Plasma Etching: Fundamentals and Applications
5012:Handbook of Silicon Wafer Cleaning Technology
5008:
4588:"Nanowires give vertical transistors a boost"
4546:"What's Different About Next-Gen Transistors"
3526:"Series 900 In-Line Sputtering System by MRC"
3512:"Applied Materials Precision 5000 CVD System"
3426:"Wafer fab costs skyrocketing out of control"
2269:Semiconductor equipment sales leaders by year
351:
6758:Li, Z.; Tian, Y.; Teng, C.; Cao, H. (2020).
6154:
3541:Vacuum Deposition onto Webs, Films and Foils
3361:How Transistor Area Shrank by 1 Million Fold
3346:"Evolution of the Silicon Wafer Infographic"
2922:"Overall Roadmap Technology Characteristics"
2787:
1921:refractive index, and extinction coefficient
1840:. In this approach to wiring (often called
1710:Gate-last consisted of first depositing the
6439:2006 International Electron Devices Meeting
6072:Ion Implantation and Synthesis of Materials
5794:
4161:"A Brief History of Process Node Evolution"
3631:"300mm Semiconductor Wafers get a reprieve"
2944:"A Brief History of Process Node Evolution"
2663:
2563:
7014:"Introduction to Semiconductor Technology"
6918:. Archived from the original on 2023-01-22
6838:
5288:
5265:
5242:
4950:Labor, U. S. Dept of (February 19, 2000).
4901:
4899:
4869:
4423:
4376:
3925:. John Wiley & Sons. 28 January 2005.
3222:
3141:
2501:
1970:) of the wafer per unit area, usually cm.
1721:
877:nanometer N5 node, with a density of 171.3
670:. In 1965, C.W. Mueller and P.H. Robinson
358:
344:
7110:https://www.semiconductors.org/ecosystem/
6851:The Journal of Physical Chemistry Letters
6793:
6783:
6629:
6627:
6625:
6477:
5989:
5921:
5744:Dry Etching Technology for Semiconductors
5224:
5222:
5202:
5200:
5198:
5004:
5002:
4762:
4735:"TSMC Starts 5-Nanometer Risk Production"
4532:"The Increasingly Uneven Race to 3nm/2nm"
4478:
4052:
3687:
3685:
3611:
3609:
3013:
3011:
2872:Semiconductor Memory Devices and Circuits
2626:
2502:Wang, H. P.; Kim, S. C.; Liu, B. (2014).
918:Wafer processing (also called front end)
639:μm process before gradually scaling to a
6181:
5767:
5713:
5633:Miller, Michael J. (February 15, 2018).
4794:
4377:Derbyshire, Katherine (April 20, 2017).
4071:
3225:"Ion Implantation in Silicon Technology"
3165:
2984:
2982:
2898:
2744:
2742:
2664:Kim, Seong Chan; Schelske, Greg (2016).
2297:List of semiconductor fabrication plants
2292:List of integrated circuit manufacturers
1821:
1365:
413:, typically made of pure single-crystal
18:
7221:
6633:
6412:
6389:Complementary Metal Oxide Semiconductor
5902:
5206:
5139:Handbook of Integrated Circuit Industry
5110:Hattori, Takeshi (September 30, 2009).
5109:
4896:
4870:Shepardson, David (December 21, 2023).
4452:
4424:Bohr, Mark; Mistry, Kaizad (May 2011).
3718:
2601:
2599:
2543:
2541:
2432:
2430:
2428:
2426:
2424:
1551:; then, a machine called an aligner or
1375:Prevention of contamination and defects
1167:Electrochemical deposition (ECD). See
1077:Metal organic chemical vapor deposition
845:chips are in mass production by Intel,
425:are used for specialized applications.
7270:
7236:
7157:
6622:
6536:
6516:
6392:. BoD – Books on Demand. August 2018.
6211:Semiconductor Manufacturing Technology
6182:Grovenor, C. R. M. (October 5, 2017).
5875:
5821:
5740:
5632:
5346:
5259:
5236:
5219:
5195:
5050:Journal of the Electrochemical Society
5036:
4999:
4931:from the original on December 16, 2019
4848:
4795:Smith, Nicola; Liu, John (July 2021).
4357:
4309:"14 nm lithography process - WikiChip"
4280:"10 nm lithography process - WikiChip"
4188:
3737:
3698:. Walter de Gruyter GmbH & Co KG.
3682:
3606:
3017:
3008:
2497:
2495:
2436:
2363:IEEE/ASME Transactions on Mechatronics
2120:
6542:
6524:"The High-k Solution - IEEE Spectrum"
4949:
4732:
4702:
3792:
3691:
3180:Springer Science & Business Media
3171:
3030:from the original on October 28, 2020
2988:
2979:
2739:
1570:Modification of electrical properties
1237:three-dimensional integrated circuits
1206:three-dimensional integrated circuits
1191:may also be carried out at this step)
6983:"Advanced MOSFETs and Novel Devices"
6616:"BEOL Wiring Process for CMOS Logic"
6074:. Springer. 2006. pp. 213–238.
6017:
5962:
5576:"Study into human particle shedding"
5209:"What's Next For Atomic Layer Etch?"
5090:
4090:
3858:Hossain-Pas, S.; Pas, M. F. (1997).
3175:History of Semiconductor Engineering
2814:
2596:
2538:
2421:
2230:List of semiconductor scale examples
2204:List of semiconductor scale examples
1628:metal oxide field effect transistors
1339:Laser marking or silkscreen printing
627:in 1963. CMOS was commercialised by
582:List of semiconductor scale examples
7133:"Why tech pollution's going global"
6949:
5922:Franssila, Sami (28 January 2005).
5207:LaPedus, Mark (November 16, 2017).
4360:"Chip Aging Becomes Design Problem"
4336:
4146:"Get ready for 675-mm fabs in 2021"
3947:"Trends in single-wafer processing"
3048:
2492:
2198:Timeline of commercial MOSFET nodes
1638:Front-end-of-line (FEOL) processing
560:actually has features (the tips of
421:is almost always used, but various
373:is the process used to manufacture
13:
7215:
6238:75th Anniversary of the Transistor
5822:Powell, R. A. (December 2, 2012).
5741:Nojiri, Kazuo (October 25, 2014).
4827:
4670:
4158:
4072:Sperling, Ed (February 14, 2018).
3670:. Vol. 449. pp. 97–112.
2941:
2929:Semiconductor Industry Association
2868:
2039:
1902:
1818:interconnect (integrated circuits)
1760:Back-end-of-line (BEOL) processing
1672:wherein a silicon variant such as
936:sometimes while spinning the wafer
793:(SOI) technology has been used in
14:
7299:
7246:
6726:Low- k Materials: Recent Advances
6591:Technology of Integrated Circuits
6018:Fair, Richard B. (January 1998).
5990:Glavish, Hilton; Farley, Marvin.
5963:Lian, Yaguang (10 October 2022).
5879:Etching in Microsystem Technology
5876:Köhler, Michael (July 11, 2008).
4703:Cheng, Godfrey (14 August 2019).
3123:from the original on 23 July 2019
3088:from the original on 7 April 2019
2989:Moore, Samuel K. (21 July 2020).
2173:highly reactive liquids, such as
1888:chemical-mechanical planarization
1533:chemical-mechanical planarization
7278:Semiconductor device fabrication
7200:
7189:
7178:
7151:
7125:
7114:
7103:
7092:
7081:
7070:
7041:
7006:
6975:
6943:
6824:
6810:
6751:
6712:
6698:
6672:
6646:
6608:
6581:
6471:
6425:
6406:
6380:
6374:"Tracing Samsung's Road to 14nm"
6366:
6352:
6338:
6306:
6296:
6287:
6255:
6228:
6202:
6175:
6148:
6128:
6096:
6060:
6011:
5983:
5956:
5942:
5925:Introduction to Microfabrication
5915:
5903:LaPedus, Mark (March 21, 2022).
5896:
5869:
5842:
5825:Dry Etching for Microelectronics
5815:
5788:
5761:
5734:
5707:
5678:
5652:
5597:
5547:
5518:
5489:
5471:
5442:
5413:
5384:
5319:
5282:
5156:
5130:
5103:
5091:Hars, Adele (October 20, 2022).
5084:
4988:
4970:
4943:
4913:
4882:
4863:
4849:Whalen, Jeanne (June 14, 2021).
4842:
4379:"Will Self-Heating Stop FinFETs"
4358:Bailey, Brian (August 9, 2018).
4053:Mutschler, Ann (July 13, 2017).
3922:Introduction to Microfabrication
3692:Zhang, Jie (24 September 2018).
3544:. William Andrew. 21 June 2011.
3324:. CRC Press. 13 September 2018.
3153:. Vol. VI. pp. 32–33.
3018:Ridley, Jacob (April 29, 2020).
2170:used for depositing polysilicon.
1129:Rapid thermal processing (RTP),
896:
430:semiconductor fabrication plants
371:Semiconductor device fabrication
44:
7253:Semiconductor industry glossery
7232:Wiki related to Chip Technology
7158:Baliga, B. (December 2, 2012).
7059:from the original on 2021-01-22
7030:from the original on 2018-04-03
6964:from the original on 2020-05-25
6413:LaPedus, Mark (July 24, 2017).
5696:from the original on 2020-10-15
5615:from the original on 2020-10-16
5586:from the original on 2020-10-15
5536:from the original on 2019-05-26
5460:from the original on 2019-05-16
5431:from the original on 2019-05-26
5402:from the original on 2019-06-14
5266:Vogler, D. (19 November 2008).
5116:. The Electrochemical Society.
5015:. William Andrew. p. 223.
4821:
4807:
4788:
4777:from the original on 2019-10-12
4756:
4745:from the original on 2020-05-05
4726:
4696:
4685:from the original on 2019-04-20
4664:
4650:
4644:"Transistor Options Beyond 3nm"
4636:
4622:
4608:
4594:
4580:
4566:
4552:
4538:
4524:
4510:
4472:
4446:
4417:
4403:
4389:
4370:
4351:
4330:
4319:from the original on 2019-07-01
4301:
4290:from the original on 2019-07-01
4272:
4261:from the original on 2019-07-09
4243:
4232:from the original on 2019-07-09
4214:
4203:from the original on 2019-07-09
4182:
4171:from the original on 2019-07-09
4152:
4138:
4124:
4110:
4084:
4065:
4046:
4035:from the original on 2017-11-06
4017:
3999:
3983:. 2 August 2016. Archived from
3973:
3939:
3913:
3882:
3851:
3825:
3786:
3752:
3738:Becker, Scott (24 March 2003).
3731:
3712:
3655:
3641:
3623:
3592:
3558:
3532:
3518:
3504:
3484:
3460:
3446:
3432:
3418:
3404:
3378:
3352:
3338:
3312:
3283:
3196:from the original on 2020-08-06
3135:
3074:
3063:from the original on 2020-11-12
3042:
2968:from the original on 2020-11-12
2954:
2935:
2914:
2862:
2835:
2808:
2781:
2700:
2646:from the original on 2021-11-01
2189:, used in etching and cleaning.
2018:
1811:
1770:
889:From 2020 to 2022, there was a
812:process was similar to Intel's
749:
633:4000-series integrated circuits
602:
489:
6681:Copper Interconnect Technology
6634:LaPedus, Mark (May 22, 2017).
5142:. Springer. 27 November 2023.
3719:LaPedus, Mark (May 21, 2018).
3390:. Springer. 30 November 1995.
2657:
2557:
2445:
2396:
1935:
904:integrated device manufacturer
1:
7226:. Cambridge University Press.
6684:. Springer. 22 January 2010.
6658:. Springer. 26 January 2004.
5768:Sugawara, M. (May 28, 1998).
5714:Sugawara, M. (May 28, 1998).
5664:. CRC Press. 3 October 2018.
4953:Occupational Outlook Handbook
4763:Shilov, Anton; Cutress, Ian.
4189:Hruska, Joel (23 June 2014).
3240:American Institute of Physics
2869:Yu, Shimeng (19 April 2022).
2815:Mack, Chris (11 March 2008).
2340:
2154:poisonous compounds, such as
2083:(pronounced "leed frame") of
1467:
1175:Chemical-mechanical polishing
924:Cleaning by solvents such as
737:during processing in vacuum.
528:, designated by the process'
23:NASA's Glenn Research Center
7161:Epitaxial Silicon Technology
6894:"Yield and Yield Management"
6080:10.1007/978-3-540-45298-0_15
5243:Pelé, A-F. (29 March 2022).
5043:Natraj Narayanswami (1999).
4939:– via www.reuters.com.
4453:Grabham, Dan (May 6, 2011).
3617:"Applied Materials Producer"
2962:"Technology Node - WikiChip"
2162:in ion implantation doping,
2069:Integrated circuit packaging
2062:
1975:tests the chips on the wafer
1862:dynamic random-access memory
1746:dynamic random-access memory
1594:or, in advanced devices, by
1405:to protect the devices from
825:fin field-effect transistors
389:, and memory chips (such as
7:
5580:www.cleanroomtechnology.com
5526:"Die Attach Film Adhesives"
4733:Schor, David (2019-04-06).
2899:Shirriff, Ken (June 2020).
2281:Semiconductor consolidation
2212:
1359:Additionally steps such as
635:in 1968, starting with a 20
409:are gradually created on a
10:
7304:
6492:10.1109/IWPSD.2007.4472451
5329:Plasma Processing for VLSI
3837:. Springer. 29 June 2013.
3819:10.1016/j.nimb.2005.05.016
3668:AIP Conference Proceedings
3478:10.1109/ISPSD.2014.6856005
3364:. Springer. 15 July 2020.
3256:Journal of Applied Physics
3159:10.1109/ISSCC.1963.1157450
2375:10.1109/TMECH.2013.2273435
2286:Local oxidation of silicon
2201:
2124:
2066:
2043:
1939:
1815:
1763:
1725:
1641:
1572:has historically entailed
1501:(MBE), and more recently,
1495:electrochemical deposition
1471:
1425:
1378:
1012:Etching (microfabrication)
861:and GlobalFoundries, with
668:Journal of Applied Physics
579:
575:
7174:– via Google Books.
6735:10.1002/9781119963677.ch1
6640:Semiconductor Engineering
6557:10.1109/CICC.2007.4405765
6419:Semiconductor Engineering
6324:10.1109/IEDM.2015.7409775
6273:10.1109/ASMC.2012.6212925
6241:. John Wiley & Sons.
6198:– via Google Books.
6185:Microelectronic Materials
6171:– via Google Books.
6114:10.1109/IJCNN.2006.247284
5969:. John Wiley & Sons.
5928:. John Wiley & Sons.
5909:Semiconductor Engineering
5892:– via Google Books.
5882:. John Wiley & Sons.
5865:– via Google Books.
5838:– via Google Books.
5811:– via Google Books.
5784:– via Google Books.
5757:– via Google Books.
5730:– via Google Books.
5342:– via Google Books.
5303:10.1109/ASMC.2017.7969207
5213:Semiconductor Engineering
5126:– via Google Books.
5097:Semiconductor Engineering
4966:– via Google Books.
4705:"Moore's Law is not Dead"
4658:"Samsung, GF Ramp FD-SOI"
4383:Semiconductor Engineering
4364:Semiconductor Engineering
4078:Semiconductor Engineering
4059:Semiconductor Engineering
3959:10.1109/VLSIT.1992.200629
3725:Semiconductor Engineering
2821:. John Wiley & Sons.
2676:10.1109/ASMC.2016.7491075
2514:10.1109/ASMC.2014.6846999
1491:chemical vapor deposition
1487:physical vapor deposition
1440:is made out of extremely
1421:
1091:Physical vapor deposition
1071:Chemical vapor deposition
1033:Deep reactive-ion etching
912:integrated circuit design
397:). It is a multiple-step
7222:Kaeslin, Hubert (2008).
6729:. Wiley. pp. 1–33.
6447:10.1109/IEDM.2006.346959
6005:10.1109/IIT.2018.8807986
5530:www.henkel-adhesives.com
5181:10.1109/TSM.2021.3129770
4074:"Chip Aging Accelerates"
3578:10.1109/ISSM.2000.993612
3232:The Industrial Physicist
2767:10.1109/TSM.2020.2977122
2725:10.1109/TSM.2022.3209221
2582:10.1109/TSM.2018.2791985
1748:(DRAM) devices, storage
1432:mono-crystalline silicon
1185:automatic test equipment
966:Immersion batch cleaning
6415:"What's After FinFETs?"
6027:Proceedings of the IEEE
5559:www.computerhistory.org
5361:Electrochemical Society
4630:"What's After FinFETs?"
4493:10.1109/MM.2017.4241347
3907:10.1109/TSM.2003.810939
3772:10.1109/IIT.1996.586424
3293:Proceedings of the IEEE
3116:Computer History Museum
1794:low dielectric constant
1722:Gate oxide and implants
1660:. In the most advanced
1596:rapid thermal annealing
1513:or, more specifically,
1503:atomic layer deposition
1085:Atomic layer deposition
660:North American Aviation
625:Fairchild Semiconductor
423:compound semiconductors
7237:Yoshio, Nishi (2017).
6543:Khare, Mukesh (2007).
6478:Narayanan, V. (2007).
3600:"The 300mm Era Begins"
3306:10.1109/PROC.1964.3436
2437:Yoshio, Nishi (2017).
2259:Semiconductor industry
1895:copper interconnects.
1831:
1826:Synthetic detail of a
1732:doping (semiconductor)
1499:molecular beam epitaxy
1371:
1300:tape automated bonding
1264:), and WLCSP packages)
1110:Molecular beam epitaxy
908:a handful of companies
782:are among the biggest
770:, the world's largest
756:semiconductor industry
594:Semiconductor industry
590:MOS integrated circuit
27:
6747:– via CrossRef.
2164:tungsten hexafluoride
2013:operating temperature
1858:tungsten hexafluoride
1825:
1369:
1344:printed circuit board
1079:(MOCVD), used in LEDs
654:while working at the
544:length, such as the "
502:semiconductor process
375:semiconductor devices
22:
7283:Cleanroom technology
6636:"The Race To 10/7nm"
6551:. pp. 417–420.
5297:. pp. 102–106.
4835:World Economic Forum
4132:"Foundry Wars Begin"
3876:10.1557/PROC-470-201
3834:Dry Etching for VLSI
2315:for labels on wafers
2135:poisonous elemental
2113:the wafer is diced.
2107:dual in-line package
1842:subtractive aluminum
1683:silicon on insulator
1509:layer formation, by
1363:may be carried out.
1247:Redistribution layer
1160:Laser lift-off (for
1131:rapid thermal anneal
1039:Atomic layer etching
1027:Reactive-ion etching
891:global chip shortage
791:Silicon on insulator
607:An improved type of
530:minimum feature size
6776:2020Mate...13.5049L
6048:on 2 September 2007
5855:. Springer Nature.
5801:. Springer Nature.
5063:1999JElS..146..767N
4956:. JIST Publishing.
4909:. 25 February 2024.
4856:The Washington Post
4646:. 15 February 2018.
4148:. 14 November 2006.
3987:on 18 February 2024
3811:2005NIMPB.237..284R
3269:1964JAP....35.1349M
2470:2012JVSTB..30d0801L
2121:Hazardous materials
1983:non-working parts.
1874:copper interconnect
1792:, but recently new
1604:dielectric constant
1462:Czochralski process
1428:Wafer (electronics)
1292:thermosonic bonding
1256:Wafer bumping (for
1202:Through-silicon via
1126:Thermal treatments
1117:Ion beam deposition
1062:Buffered oxide etch
972:Surface passivation
760:Samsung Electronics
652:silicon on sapphire
648:Harold M. Manasevit
615:, was developed by
540:) of the process's
407:electronic circuits
383:computer processors
379:integrated circuits
7021:STMicroelectronics
6785:10.3390/ma13215049
6486:. pp. 42–45.
5363:. pp. 23–26.
5332:. Academic Press.
4982:large.stanford.edu
4548:. 20 October 2022.
4097:chip-architect.com
3793:Renau, A. (2005).
3721:"200mm Fab Crunch"
3172:Lojek, Bo (2007).
2208:Transistor density
2103:Chip scale package
2046:Wafer backgrinding
2000:built-in self-test
1962:test chips with a
1832:
1372:
1235:and stacking (for
1219:Wafer backgrinding
955:Jet spray cleaning
871:transistor density
641:10 μm process
598:Transistor density
28:
7171:978-0-323-15545-8
7049:"Wafer Backgrind"
6950:Cutress, Dr Ian.
6863:10.1021/jz502471h
6744:978-0-470-66254-0
6691:978-1-4419-0076-0
6665:978-3-540-43181-7
6601:978-3-662-04160-4
6566:978-1-4244-0786-6
6501:978-1-4244-1727-8
6399:978-1-78923-496-1
6248:978-1-394-20244-7
6221:978-981-310-671-0
6195:978-1-351-43154-5
6168:978-1-4200-1766-3
6089:978-3-540-23674-0
5976:978-1-119-86780-7
5935:978-0-470-02056-2
5889:978-3-527-61379-3
5862:978-3-030-39284-0
5835:978-0-08-098358-5
5808:978-981-15-7949-3
5781:978-0-19-159029-0
5754:978-3-319-10295-5
5727:978-0-19-159029-0
5671:978-1-4200-5153-7
5370:978-1-56677-411-6
5339:978-1-4832-1775-8
5312:978-1-5090-5448-0
5270:. Gold Flag Media
5149:978-981-99-2836-1
5123:978-1-56677-742-1
5071:10.1149/1.1391679
5022:978-0-323-51085-1
4963:978-1-56370-677-6
4927:. June 21, 2019.
4159:Shukla, Priyank.
3932:978-0-470-02056-2
3844:978-1-4899-2566-4
3705:978-3-11-048723-7
3551:978-1-4377-7868-7
3397:978-0-7923-9619-2
3371:978-3-030-40021-7
3331:978-1-351-24866-2
3277:10.1063/1.1713618
2942:Shukla, Priyank.
2882:978-1-000-56761-8
2855:978-1-351-24866-2
2828:978-0-470-72386-9
2801:978-1-4200-1766-3
2685:978-1-5090-0270-2
2523:978-1-4799-3944-2
2478:10.1116/1.3700230
2187:hydrofluoric acid
2175:hydrogen peroxide
1953:Process variation
1930:Virtual metrology
1728:self-aligned gate
1712:high-κ dielectric
1688:parasitic effects
1674:silicon-germanium
1612:ultraviolet light
1592:furnace annealing
1511:thermal oxidation
1474:Wafer fabrication
1249:manufacture (for
1204:manufacture (for
1187:, binning and/or
1147:Thermal oxidation
987:Edge bead removal
958:Cryogenic aerosol
930:trichloroethylene
849:, TSMC, Samsung,
772:pure play foundry
536:(or historically
476:Applied Materials
403:thermal oxidation
399:photolithographic
368:
367:
7295:
7242:
7227:
7209:
7204:
7198:
7193:
7187:
7182:
7176:
7175:
7155:
7149:
7148:
7146:
7144:
7139:. April 25, 2002
7129:
7123:
7118:
7112:
7107:
7101:
7096:
7090:
7085:
7079:
7074:
7068:
7067:
7065:
7064:
7045:
7039:
7038:
7036:
7035:
7029:
7018:
7010:
7004:
7003:
7001:
7000:
6994:
6988:. Archived from
6987:
6979:
6973:
6972:
6970:
6969:
6947:
6941:
6940:
6934:
6926:
6924:
6923:
6907:
6898:
6890:
6881:
6880:
6878:
6877:
6842:
6836:
6835:
6828:
6822:
6821:
6814:
6808:
6807:
6797:
6787:
6755:
6749:
6748:
6716:
6710:
6709:
6702:
6696:
6695:
6676:
6670:
6669:
6650:
6644:
6643:
6631:
6620:
6619:
6612:
6606:
6605:
6585:
6579:
6578:
6540:
6534:
6533:
6520:
6514:
6513:
6475:
6469:
6468:
6441:. pp. 1–4.
6429:
6423:
6422:
6410:
6404:
6403:
6384:
6378:
6377:
6370:
6364:
6363:
6356:
6350:
6349:
6342:
6336:
6335:
6310:
6304:
6300:
6294:
6291:
6285:
6284:
6259:
6253:
6252:
6232:
6226:
6225:
6206:
6200:
6199:
6179:
6173:
6172:
6152:
6146:
6145:
6132:
6126:
6125:
6100:
6094:
6093:
6064:
6058:
6057:
6055:
6053:
6047:
6041:. Archived from
6039:10.1109/5.658764
6024:
6015:
6009:
6008:
5998:
5987:
5981:
5980:
5960:
5954:
5953:
5946:
5940:
5939:
5919:
5913:
5912:
5900:
5894:
5893:
5873:
5867:
5866:
5846:
5840:
5839:
5819:
5813:
5812:
5792:
5786:
5785:
5765:
5759:
5758:
5738:
5732:
5731:
5711:
5705:
5704:
5702:
5701:
5682:
5676:
5675:
5656:
5650:
5649:
5647:
5645:
5630:
5624:
5623:
5621:
5620:
5601:
5595:
5594:
5592:
5591:
5572:
5563:
5562:
5551:
5545:
5544:
5542:
5541:
5522:
5516:
5515:
5513:
5512:
5503:. Archived from
5493:
5487:
5486:
5483:www.orbotech.com
5475:
5469:
5468:
5466:
5465:
5446:
5440:
5439:
5437:
5436:
5417:
5411:
5410:
5408:
5407:
5388:
5382:
5381:
5379:
5377:
5350:
5344:
5343:
5323:
5317:
5316:
5286:
5280:
5279:
5277:
5275:
5263:
5257:
5256:
5254:
5252:
5240:
5234:
5233:
5226:
5217:
5216:
5204:
5193:
5192:
5160:
5154:
5153:
5134:
5128:
5127:
5107:
5101:
5100:
5088:
5082:
5081:
5079:
5077:
5040:
5034:
5033:
5031:
5029:
5006:
4997:
4992:
4986:
4985:
4974:
4968:
4967:
4947:
4941:
4940:
4938:
4936:
4917:
4911:
4910:
4903:
4894:
4893:
4886:
4880:
4879:
4867:
4861:
4860:
4846:
4840:
4839:
4825:
4819:
4818:
4811:
4805:
4804:
4792:
4786:
4785:
4783:
4782:
4760:
4754:
4753:
4751:
4750:
4730:
4724:
4723:
4721:
4719:
4700:
4694:
4693:
4691:
4690:
4668:
4662:
4661:
4660:. 27 April 2018.
4654:
4648:
4647:
4640:
4634:
4633:
4626:
4620:
4619:
4612:
4606:
4605:
4598:
4592:
4591:
4590:. 2 August 2012.
4584:
4578:
4577:
4570:
4564:
4563:
4556:
4550:
4549:
4542:
4536:
4535:
4528:
4522:
4521:
4514:
4508:
4507:
4476:
4470:
4469:
4467:
4465:
4450:
4444:
4443:
4441:
4439:
4430:
4421:
4415:
4414:
4407:
4401:
4400:
4393:
4387:
4386:
4374:
4368:
4367:
4355:
4349:
4348:
4334:
4328:
4327:
4325:
4324:
4305:
4299:
4298:
4296:
4295:
4276:
4270:
4269:
4267:
4266:
4247:
4241:
4240:
4238:
4237:
4218:
4212:
4211:
4209:
4208:
4186:
4180:
4179:
4177:
4176:
4165:design-reuse.com
4156:
4150:
4149:
4142:
4136:
4135:
4134:. 19 April 2021.
4128:
4122:
4121:
4120:. 26 April 2001.
4114:
4108:
4107:
4105:
4103:
4091:de Vries, Hans.
4088:
4082:
4081:
4069:
4063:
4062:
4050:
4044:
4043:
4041:
4040:
4021:
4015:
4014:
4003:
3997:
3996:
3994:
3992:
3977:
3971:
3970:
3943:
3937:
3936:
3917:
3911:
3910:
3886:
3880:
3879:
3855:
3849:
3848:
3829:
3823:
3822:
3805:(1–2): 284–289.
3790:
3784:
3783:
3756:
3750:
3749:
3735:
3729:
3728:
3716:
3710:
3709:
3689:
3680:
3679:
3659:
3653:
3652:
3645:
3639:
3638:
3627:
3621:
3620:
3613:
3604:
3603:
3596:
3590:
3589:
3562:
3556:
3555:
3536:
3530:
3529:
3522:
3516:
3515:
3508:
3502:
3501:
3488:
3482:
3481:
3464:
3458:
3457:
3450:
3444:
3443:
3440:"Kla 200 Series"
3436:
3430:
3429:
3422:
3416:
3415:
3408:
3402:
3401:
3382:
3376:
3375:
3356:
3350:
3349:
3342:
3336:
3335:
3316:
3310:
3309:
3287:
3281:
3280:
3250:
3244:
3243:
3229:
3220:
3205:
3204:
3202:
3201:
3169:
3163:
3162:
3139:
3133:
3132:
3130:
3128:
3107:
3098:
3097:
3095:
3093:
3084:. 22 July 2018.
3078:
3072:
3071:
3069:
3068:
3046:
3040:
3039:
3037:
3035:
3015:
3006:
3005:
3003:
3001:
2986:
2977:
2976:
2974:
2973:
2958:
2952:
2951:
2948:Design And Reuse
2939:
2933:
2932:
2926:
2918:
2912:
2911:
2909:
2907:
2896:
2887:
2886:
2866:
2860:
2859:
2839:
2833:
2832:
2812:
2806:
2805:
2785:
2779:
2778:
2746:
2737:
2736:
2704:
2698:
2697:
2661:
2655:
2654:
2652:
2651:
2645:
2630:
2612:
2603:
2594:
2593:
2561:
2555:
2554:
2545:
2536:
2535:
2499:
2490:
2489:
2449:
2443:
2442:
2434:
2419:
2418:
2416:
2415:
2408:China Water Risk
2400:
2394:
2393:
2391:
2389:
2354:
2334:Transistor count
2319:Etch pit density
2302:Microfabrication
2247:Multigate device
2087:-plated copper;
1856:technique using
1652:directly in the
1610:via exposure to
1608:low-κ insulators
1587:ion implantation
1562:"dry" stripping/
1450:mono-crystalline
1399:fan filter units
1306:IC encapsulation
1002:Ion implantation
977:Photolithography
940:Piranha solution
880:
876:
680:RCA Laboratories
638:
516:I/II/III/IV and
387:microcontrollers
360:
353:
346:
316:Transistor count
269:
251:
242:
233:
224:
215:
206:
197:
188:
179:
170:
161:
116:
107:
98:
89:
80:
71:
48:
30:
29:
7303:
7302:
7298:
7297:
7296:
7294:
7293:
7292:
7268:
7267:
7249:
7228:, section 14.2.
7218:
7216:Further reading
7213:
7212:
7205:
7201:
7194:
7190:
7183:
7179:
7172:
7156:
7152:
7142:
7140:
7131:
7130:
7126:
7119:
7115:
7108:
7104:
7097:
7093:
7086:
7082:
7075:
7071:
7062:
7060:
7047:
7046:
7042:
7033:
7031:
7027:
7016:
7012:
7011:
7007:
6998:
6996:
6992:
6985:
6981:
6980:
6976:
6967:
6965:
6948:
6944:
6928:
6927:
6921:
6919:
6916:
6905:
6896:
6892:
6891:
6884:
6875:
6873:
6843:
6839:
6830:
6829:
6825:
6816:
6815:
6811:
6756:
6752:
6745:
6717:
6713:
6704:
6703:
6699:
6692:
6678:
6677:
6673:
6666:
6652:
6651:
6647:
6632:
6623:
6614:
6613:
6609:
6602:
6586:
6582:
6567:
6541:
6537:
6522:
6521:
6517:
6502:
6476:
6472:
6457:
6430:
6426:
6411:
6407:
6400:
6386:
6385:
6381:
6372:
6371:
6367:
6358:
6357:
6353:
6344:
6343:
6339:
6312:
6311:
6307:
6301:
6297:
6292:
6288:
6261:
6260:
6256:
6249:
6233:
6229:
6222:
6208:
6207:
6203:
6196:
6180:
6176:
6169:
6153:
6149:
6134:
6133:
6129:
6102:
6101:
6097:
6090:
6066:
6065:
6061:
6051:
6049:
6045:
6022:
6016:
6012:
5996:
5988:
5984:
5977:
5961:
5957:
5948:
5947:
5943:
5936:
5920:
5916:
5901:
5897:
5890:
5874:
5870:
5863:
5847:
5843:
5836:
5820:
5816:
5809:
5793:
5789:
5782:
5766:
5762:
5755:
5739:
5735:
5728:
5712:
5708:
5699:
5697:
5684:
5683:
5679:
5672:
5658:
5657:
5653:
5643:
5641:
5631:
5627:
5618:
5616:
5603:
5602:
5598:
5589:
5587:
5574:
5573:
5566:
5553:
5552:
5548:
5539:
5537:
5524:
5523:
5519:
5510:
5508:
5495:
5494:
5490:
5477:
5476:
5472:
5463:
5461:
5454:www.disco.co.jp
5448:
5447:
5443:
5434:
5432:
5425:www.disco.co.jp
5419:
5418:
5414:
5405:
5403:
5396:www.disco.co.jp
5390:
5389:
5385:
5375:
5373:
5371:
5351:
5347:
5340:
5324:
5320:
5313:
5287:
5283:
5273:
5271:
5264:
5260:
5250:
5248:
5241:
5237:
5228:
5227:
5220:
5205:
5196:
5161:
5157:
5150:
5136:
5135:
5131:
5124:
5108:
5104:
5089:
5085:
5075:
5073:
5041:
5037:
5027:
5025:
5023:
5007:
5000:
4993:
4989:
4976:
4975:
4971:
4964:
4948:
4944:
4934:
4932:
4919:
4918:
4914:
4905:
4904:
4897:
4888:
4887:
4883:
4868:
4864:
4847:
4843:
4828:Miller, Chris.
4826:
4822:
4817:. 14 June 2021.
4813:
4812:
4808:
4793:
4789:
4780:
4778:
4761:
4757:
4748:
4746:
4731:
4727:
4717:
4715:
4701:
4697:
4688:
4686:
4671:Shilov, Anton.
4669:
4665:
4656:
4655:
4651:
4642:
4641:
4637:
4632:. 24 July 2017.
4628:
4627:
4623:
4614:
4613:
4609:
4604:. 25 July 2016.
4600:
4599:
4595:
4586:
4585:
4581:
4572:
4571:
4567:
4558:
4557:
4553:
4544:
4543:
4539:
4530:
4529:
4525:
4516:
4515:
4511:
4477:
4473:
4463:
4461:
4451:
4447:
4437:
4435:
4428:
4422:
4418:
4409:
4408:
4404:
4395:
4394:
4390:
4375:
4371:
4356:
4352:
4335:
4331:
4322:
4320:
4313:en.wikichip.org
4307:
4306:
4302:
4293:
4291:
4284:en.wikichip.org
4278:
4277:
4273:
4264:
4262:
4249:
4248:
4244:
4235:
4233:
4220:
4219:
4215:
4206:
4204:
4187:
4183:
4174:
4172:
4157:
4153:
4144:
4143:
4139:
4130:
4129:
4125:
4116:
4115:
4111:
4101:
4099:
4089:
4085:
4070:
4066:
4051:
4047:
4038:
4036:
4023:
4022:
4018:
4005:
4004:
4000:
3990:
3988:
3979:
3978:
3974:
3945:
3944:
3940:
3933:
3919:
3918:
3914:
3887:
3883:
3864:MRS Proceedings
3856:
3852:
3845:
3831:
3830:
3826:
3791:
3787:
3758:
3757:
3753:
3736:
3732:
3717:
3713:
3706:
3690:
3683:
3676:10.1063/1.56795
3660:
3656:
3651:. 10 July 2000.
3647:
3646:
3642:
3629:
3628:
3624:
3615:
3614:
3607:
3602:. 10 July 2000.
3598:
3597:
3593:
3564:
3563:
3559:
3552:
3538:
3537:
3533:
3524:
3523:
3519:
3510:
3509:
3505:
3490:
3489:
3485:
3466:
3465:
3461:
3452:
3451:
3447:
3438:
3437:
3433:
3424:
3423:
3419:
3410:
3409:
3405:
3398:
3384:
3383:
3379:
3372:
3358:
3357:
3353:
3344:
3343:
3339:
3332:
3318:
3317:
3313:
3300:(12): 1487–90.
3288:
3284:
3251:
3247:
3227:
3221:
3208:
3199:
3197:
3190:
3182:. p. 330.
3170:
3166:
3140:
3136:
3126:
3124:
3109:
3108:
3101:
3091:
3089:
3080:
3079:
3075:
3066:
3064:
3047:
3043:
3033:
3031:
3016:
3009:
2999:
2997:
2987:
2980:
2971:
2969:
2960:
2959:
2955:
2940:
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2649:
2647:
2643:
2628:10.1.1.493.1460
2610:
2604:
2597:
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2547:
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2493:
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2343:
2338:
2215:
2210:
2202:Main articles:
2200:
2129:
2123:
2071:
2065:
2052:
2050:Die preparation
2044:Main articles:
2042:
2040:Die preparation
2021:
1969:
1944:
1938:
1905:
1903:Wafer metrology
1852:in them with a
1820:
1814:
1799:
1787:
1773:
1768:
1762:
1742:silicon dioxide
1740:(traditionally
1738:gate dielectric
1734:
1726:Main articles:
1724:
1705:
1701:
1678:crystal lattice
1646:
1640:
1626:) to fabricate
1476:
1470:
1434:
1426:Main articles:
1424:
1403:cleanroom suits
1383:
1377:
1267:Die cutting or
1262:ball grid array
1197:Die preparation
1142:Furnace anneals
949:Wafer scrubbing
934:ultrapure water
899:
878:
874:
806:GlobalFoundries
752:
636:
605:
600:
578:
542:transistor gate
522:technology node
492:
458:die singulation
364:
335:
331:Nanoelectronics
282:
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17:
12:
11:
5:
7301:
7291:
7290:
7285:
7280:
7266:
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7260:
7255:
7248:
7247:External links
7245:
7244:
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6882:
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6834:. 13 May 2014.
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6376:. 12 May 2015.
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6033:(1): 111–137.
6010:
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5774:. OUP Oxford.
5760:
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5720:. OUP Oxford.
5706:
5690:www.eesemi.com
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5057:(2): 767–774.
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4534:. 24 May 2021.
4523:
4509:
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4416:
4402:
4388:
4369:
4350:
4337:Cutress, Ian.
4329:
4300:
4271:
4257:. 2018-03-12.
4242:
4228:. 2016-09-10.
4213:
4181:
4151:
4137:
4123:
4109:
4083:
4064:
4045:
4031:. 2017-05-09.
4016:
3998:
3972:
3938:
3931:
3912:
3901:(2): 138–146.
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3263:(4): 1349–51.
3245:
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3147:Wanlass, Frank
3143:Sah, Chih-Tang
3134:
3099:
3073:
3049:Cutress, Ian.
3041:
3007:
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2780:
2761:(2): 310–315.
2738:
2719:(4): 670–679.
2699:
2684:
2656:
2615:Hitachi Review
2595:
2576:(1): 108–115.
2556:
2537:
2522:
2491:
2444:
2420:
2410:. 11 July 2013
2395:
2345:
2344:
2342:
2339:
2337:
2336:
2331:
2329:Planar process
2326:
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2119:
2067:Main article:
2064:
2061:
2041:
2038:
2020:
2017:
1967:
1940:Main article:
1937:
1934:
1904:
1901:
1869:microprocessor
1816:Main article:
1813:
1810:
1797:
1790:silicate glass
1785:
1772:
1769:
1764:Main article:
1761:
1758:
1723:
1720:
1703:
1699:
1670:straining step
1642:Main article:
1639:
1636:
1600:
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1379:Main article:
1376:
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1349:
1348:
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1340:
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1318:Electroplating
1315:
1312:
1303:
1284:
1281:Die attachment
1273:
1272:
1271:
1265:
1254:
1244:
1230:
1216:
1209:
1194:
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1192:
1189:laser trimming
1178:
1172:
1169:Electroplating
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1021:plasma etching
1009:
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964:
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947:
942:
937:
898:
895:
859:Toshiba Memory
751:
748:
604:
601:
577:
574:
491:
488:
480:Tokyo Electron
415:semiconducting
381:(ICs) such as
366:
365:
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54:MOSFET scaling
50:
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41:
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15:
9:
6:
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3:
2:
7300:
7289:
7286:
7284:
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7264:
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7259:
7258:Wafer heating
7256:
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7058:
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7044:
7026:
7023:. p. 6.
7022:
7015:
7009:
6995:on 2020-10-26
6991:
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6915:1-877750-60-3
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6507:
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6458:
6456:1-4244-0438-X
6452:
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6217:
6213:
6212:
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6197:
6191:
6188:. Routledge.
6187:
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6170:
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6161:. CRC Press.
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5560:
5556:
5550:
5535:
5531:
5527:
5521:
5507:on 2019-05-26
5506:
5502:
5501:www.nitto.com
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4802:
4801:The Telegraph
4798:
4791:
4776:
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4766:
4759:
4744:
4740:
4739:WikiChip Fuse
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4255:eejournal.com
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2875:. CRC Press.
2874:
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2857:
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2848:. CRC Press.
2847:
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2820:
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2794:. CRC Press.
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2464:(4): 040801.
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2264:Foundry model
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2257:
2253:
2250:
2249:
2248:
2245:
2241:
2238:
2237:
2236:
2233:
2231:
2228:
2226:
2223:
2221:
2218:
2217:
2209:
2205:
2195:
2188:
2184:
2183:sulfuric acid
2180:
2176:
2172:
2169:
2165:
2161:
2157:
2153:
2150:
2146:
2142:
2138:
2134:
2133:
2132:
2128:
2118:
2114:
2112:
2108:
2104:
2100:
2098:
2094:
2090:
2086:
2082:
2077:
2070:
2060:
2058:
2051:
2047:
2037:
2033:
2029:
2025:
2016:
2014:
2010:
2009:
2003:
2001:
1997:
1992:
1988:
1984:
1981:
1976:
1971:
1965:
1961:
1956:
1954:
1950:
1943:
1942:Wafer testing
1933:
1931:
1927:
1922:
1918:
1917:reflectometry
1914:
1910:
1900:
1896:
1893:
1889:
1884:
1880:
1876:
1875:
1870:
1865:
1863:
1859:
1855:
1851:
1847:
1843:
1839:
1838:
1829:
1828:standard cell
1824:
1819:
1809:
1805:
1801:
1795:
1791:
1782:
1778:
1767:
1757:
1755:
1751:
1747:
1743:
1739:
1733:
1729:
1719:
1715:
1713:
1708:
1695:
1691:
1689:
1685:
1684:
1679:
1675:
1671:
1667:
1663:
1662:logic devices
1659:
1655:
1651:
1645:
1635:
1631:
1629:
1625:
1621:
1617:
1613:
1609:
1605:
1597:
1593:
1588:
1583:
1579:
1575:
1571:
1568:
1565:
1564:plasma ashing
1560:
1556:
1555:
1550:
1549:
1544:
1540:
1537:
1534:
1530:
1526:
1522:
1519:
1516:
1512:
1508:
1504:
1500:
1496:
1492:
1488:
1484:
1481:
1480:
1479:
1475:
1465:
1463:
1459:
1455:
1451:
1447:
1443:
1439:
1433:
1429:
1419:
1416:
1412:
1408:
1407:contamination
1404:
1400:
1396:
1392:
1388:
1382:
1368:
1364:
1362:
1355:
1352:
1345:
1341:
1338:
1335:
1331:
1327:
1324:leads of the
1323:
1319:
1316:
1313:
1310:
1309:
1307:
1304:
1301:
1297:
1293:
1289:
1285:
1282:
1279:
1278:
1277:
1274:
1270:
1266:
1263:
1259:
1255:
1252:
1248:
1245:
1242:
1238:
1234:
1233:Wafer bonding
1231:
1228:
1224:
1220:
1217:
1214:
1210:
1207:
1203:
1200:
1199:
1198:
1195:
1190:
1186:
1182:
1181:Wafer testing
1179:
1176:
1173:
1170:
1166:
1163:
1159:
1153:
1150:
1149:
1148:
1145:
1143:
1140:
1137:
1134:
1132:
1128:
1127:
1125:
1122:
1121:Plasma ashing
1119:
1116:
1111:
1108:
1107:
1106:
1103:
1098:
1095:
1094:
1092:
1089:
1086:
1083:
1078:
1075:
1074:
1072:
1069:
1063:
1060:
1059:
1058:
1055:
1046:
1043:
1042:
1040:
1037:
1034:
1031:
1030:
1028:
1025:
1024:
1022:
1018:
1015:
1014:
1013:
1010:
1007:
1003:
1000:
995:
992:
989:
986:
983:
980:
979:
978:
975:
973:
970:
965:
963:
960:
957:
954:
952:Spin cleaning
951:
948:
946:
943:
941:
938:
935:
931:
927:
923:
922:
920:
919:
917:
916:
915:
913:
909:
905:
897:List of steps
894:
892:
887:
884:
872:
868:
864:
860:
856:
852:
848:
844:
840:
835:
833:
828:
826:
823:demonstrated
822:
817:
815:
814:10 nm process
811:
807:
801:
798:
796:
792:
788:
785:
781:
777:
773:
769:
765:
761:
757:
747:
744:
738:
734:
732:
728:
724:
719:
716:
713:
709:
706:
704:
700:
696:
692:
688:
683:
681:
677:
673:
669:
665:
661:
657:
653:
649:
644:
642:
634:
630:
626:
622:
621:Frank Wanlass
618:
617:Chih-Tang Sah
614:
610:
599:
595:
591:
587:
583:
573:
571:
567:
563:
559:
558:10 nm process
553:
551:
547:
546:90 nm process
543:
539:
535:
531:
527:
523:
519:
515:
510:
508:
503:
498:
494:
487:
485:
481:
477:
473:
468:
466:
461:
459:
455:
450:
447:
443:
439:
435:
431:
426:
424:
420:
416:
412:
408:
404:
400:
396:
392:
388:
384:
380:
376:
372:
361:
356:
354:
349:
347:
342:
341:
339:
338:
332:
329:
327:
324:
322:
321:Semiconductor
319:
317:
314:
312:
309:
306:
302:
299:
297:
294:
292:
289:
287:
284:
283:
280:
279:
272:
266:
265:
262:
261:
254:
248:
245:
239:
236:
230:
227:
221:
218:
212:
209:
203:
200:
194:
191:
185:
182:
176:
173:
167:
164:
158:
155:
152:
149:
146:
143:
140:
137:
134:
131:
128:
125:
122:
119:
113:
110:
104:
101:
95:
92:
86:
83:
77:
74:
68:
67:
65:
64:
60:
59:process nodes
55:
52:
51:
47:
43:
42:
39:
34:Semiconductor
32:
31:
26:
21:
7241:. CRC Press.
7238:
7223:
7202:
7191:
7180:
7164:. Elsevier.
7160:
7153:
7143:February 17,
7141:. Retrieved
7136:
7127:
7116:
7105:
7094:
7083:
7072:
7061:. Retrieved
7052:
7043:
7032:. Retrieved
7020:
7008:
6997:. Retrieved
6990:the original
6977:
6966:. Retrieved
6955:
6945:
6920:. Retrieved
6901:
6874:. Retrieved
6857:(1): 66–71.
6854:
6850:
6840:
6826:
6812:
6770:(21): 5049.
6767:
6763:
6753:
6725:
6720:
6714:
6700:
6680:
6674:
6654:
6648:
6639:
6610:
6594:. Springer.
6590:
6583:
6548:
6538:
6527:
6518:
6483:
6473:
6438:
6427:
6418:
6408:
6388:
6382:
6368:
6354:
6340:
6314:
6308:
6298:
6289:
6263:
6257:
6237:
6230:
6210:
6204:
6184:
6177:
6157:
6150:
6139:
6130:
6104:
6098:
6071:
6062:
6050:. Retrieved
6043:the original
6030:
6026:
6013:
5992:
5985:
5965:
5958:
5944:
5924:
5917:
5908:
5898:
5878:
5871:
5851:
5844:
5828:. Elsevier.
5824:
5817:
5797:
5790:
5770:
5763:
5747:. Springer.
5743:
5736:
5716:
5709:
5698:. Retrieved
5689:
5680:
5660:
5654:
5644:November 23,
5642:. Retrieved
5638:
5628:
5617:. Retrieved
5609:Chip History
5608:
5599:
5588:. Retrieved
5579:
5558:
5549:
5538:. Retrieved
5529:
5520:
5509:. Retrieved
5505:the original
5500:
5491:
5482:
5473:
5462:. Retrieved
5453:
5444:
5433:. Retrieved
5424:
5415:
5404:. Retrieved
5395:
5386:
5374:. Retrieved
5355:
5348:
5328:
5321:
5294:
5284:
5272:. Retrieved
5261:
5249:. Retrieved
5238:
5212:
5175:(1): 60–66.
5172:
5168:
5158:
5138:
5132:
5112:
5105:
5096:
5086:
5074:. Retrieved
5054:
5048:
5038:
5026:. Retrieved
5011:
4990:
4981:
4972:
4952:
4945:
4935:December 16,
4933:. Retrieved
4924:
4915:
4884:
4875:
4865:
4854:
4844:
4838:(Interview).
4833:
4823:
4809:
4800:
4790:
4779:. Retrieved
4768:
4758:
4747:. Retrieved
4738:
4728:
4718:25 September
4716:. Retrieved
4708:
4698:
4687:. Retrieved
4676:
4666:
4652:
4638:
4624:
4610:
4596:
4582:
4568:
4554:
4540:
4526:
4512:
4504:
4487:(6): 20–29.
4484:
4480:
4474:
4462:. Retrieved
4458:
4448:
4436:. Retrieved
4432:
4419:
4405:
4391:
4382:
4372:
4363:
4353:
4342:
4332:
4321:. Retrieved
4312:
4303:
4292:. Retrieved
4283:
4274:
4263:. Retrieved
4254:
4245:
4234:. Retrieved
4226:wccftech.com
4225:
4216:
4205:. Retrieved
4194:
4184:
4173:. Retrieved
4164:
4154:
4140:
4126:
4112:
4100:. Retrieved
4096:
4086:
4077:
4067:
4058:
4048:
4037:. Retrieved
4028:
4019:
4011:Chip History
4010:
4001:
3989:. Retrieved
3985:the original
3975:
3950:
3941:
3921:
3915:
3898:
3894:
3884:
3867:
3863:
3853:
3833:
3827:
3802:
3798:
3788:
3763:
3754:
3743:
3733:
3724:
3714:
3694:
3667:
3657:
3643:
3635:Chip History
3634:
3625:
3594:
3569:
3560:
3540:
3534:
3520:
3506:
3495:
3486:
3468:
3462:
3448:
3434:
3420:
3406:
3386:
3380:
3360:
3354:
3340:
3320:
3314:
3297:
3291:
3285:
3260:
3254:
3248:
3235:
3231:
3198:. Retrieved
3174:
3167:
3150:
3137:
3125:. Retrieved
3114:
3090:. Retrieved
3076:
3065:. Retrieved
3054:
3044:
3032:. Retrieved
3023:
2998:. Retrieved
2994:
2970:. Retrieved
2956:
2947:
2937:
2916:
2904:. Retrieved
2871:
2864:
2844:
2837:
2817:
2810:
2790:
2783:
2758:
2754:
2716:
2712:
2702:
2666:
2659:
2648:. Retrieved
2621:(3): 70–74.
2618:
2614:
2573:
2569:
2559:
2549:
2504:
2461:
2457:
2447:
2441:. CRC Press.
2438:
2412:. Retrieved
2407:
2398:
2386:. Retrieved
2366:
2362:
2192:
2130:
2115:
2110:
2101:
2072:
2057:wafer dicing
2053:
2034:
2030:
2026:
2022:
2019:Device yield
2006:
2004:
1993:
1989:
1985:
1972:
1957:
1948:
1945:
1913:ellipsometry
1906:
1897:
1891:
1872:
1866:
1845:
1841:
1835:
1833:
1812:Interconnect
1806:
1802:
1780:
1774:
1771:Metal layers
1735:
1716:
1709:
1696:
1692:
1681:
1669:
1665:
1647:
1632:
1601:
1581:
1577:
1569:
1552:
1546:
1538:
1520:
1482:
1477:
1452:cylindrical
1442:pure silicon
1435:
1384:
1358:
1320:(plates the
1288:Wire bonding
1286:IC bonding:
1276:IC packaging
1269:wafer dicing
1138:Laser anneal
900:
888:
843:10 nanometer
839:14 nanometer
837:As of 2019,
836:
829:
818:
802:
799:
789:
753:
750:21st century
739:
735:
720:
717:
714:
710:
707:
684:
671:
667:
658:division of
645:
611:technology,
606:
603:20th century
570:7 nm process
554:
529:
526:process node
525:
521:
511:
501:
499:
495:
493:
490:Feature size
484:Lam Research
469:
462:
451:
427:
377:, typically
370:
369:
273: ~ 2025
255: – 2022
246: – 2020
237: – 2018
228: – 2016
219: – 2014
210: – 2012
201: – 2010
192: – 2009
183: – 2007
174: – 2005
165: – 2003
156: – 2001
150: – 1999
144: – 1996
138: – 1993
132: – 1990
126: – 1987
120: – 1984
111: – 1981
102: – 1977
93: – 1974
84: – 1971
75: – 1968
33:
6052:26 February
5247:. AspenCore
4196:ExtremeTech
3991:18 February
3034:October 21,
2388:November 9,
2324:Passivation
2179:nitric acid
1996:scan chains
1936:Device test
1837:of aluminum
1650:transistors
1576:transistor
1548:photoresist
1543:lithography
1395:pressurized
1387:micrometres
1361:Wright etch
1326:lead frames
1227:PCMCIA card
1213:dicing tape
1164:production)
1099:Evaporation
1057:Wet etching
1047:Thermal ALE
1017:Dry etching
921:Wet cleans
883:3 nanometer
873:is TSMC's 5
867:5 nanometer
863:7 nanometer
703:Middle East
586:Moore's law
538:micrometers
500:A specific
311:Moore's law
154:130 nm
148:180 nm
142:250 nm
136:350 nm
130:600 nm
124:800 nm
109:1.5 μm
38:fabrication
7272:Categories
7063:2020-12-18
7053:eesemi.com
7034:2018-09-25
6999:2020-10-23
6968:2020-04-12
6922:2023-01-22
6876:2021-11-16
5700:2020-10-14
5639:PCMag Asia
5619:2020-10-14
5590:2020-10-14
5540:2019-05-26
5511:2019-05-26
5464:2019-05-26
5435:2019-05-26
5406:2019-05-26
4781:2019-10-12
4749:2019-04-07
4689:2019-05-31
4481:IEEE Micro
4323:2019-08-17
4294:2019-08-17
4265:2019-07-09
4236:2019-07-09
4207:2019-07-09
4175:2019-07-09
4039:2017-11-19
4029:AnySilicon
3200:2019-07-21
3092:20 October
3067:2020-11-07
2972:2020-10-20
2650:2021-11-01
2414:2023-01-21
2369:(1): 1–8.
2341:References
2149:phosphorus
2139:, such as
2125:See also:
2081:lead frame
1750:capacitors
1557:focuses a
1539:Patterning
1483:Deposition
1472:See also:
1468:Processing
1436:A typical
1391:cleanrooms
1354:IC testing
1096:Sputtering
1044:Plasma ALE
1004:(in which
962:Megasonics
701:, and the
691:California
672:fabricated
656:Autonetics
580:See also:
534:nanometers
507:die shrink
434:clean room
417:material.
391:NAND flash
305:multi-gate
286:Half-nodes
226:10 nm
217:14 nm
208:22 nm
199:28 nm
190:32 nm
181:45 nm
172:65 nm
163:90 nm
82:10 μm
73:20 μm
25:clean room
6957:AnandTech
6931:cite book
6764:Materials
5376:8 January
5274:8 January
5251:8 January
5230:"Epitaxy"
5189:244560651
5076:8 January
5028:8 January
4770:AnandTech
4709:TSMC Blog
4678:AnandTech
4464:April 19,
4459:TechRadar
4438:April 18,
4433:intel.com
4344:AnandTech
3967:110840307
3586:109383925
3056:AnandTech
2775:213026336
2733:252555815
2623:CiteSeerX
2486:2166-2746
2313:SEMI font
2220:Deathnium
2177:, fuming
2160:phosphine
2097:Flip-chip
2076:bondwires
2063:Packaging
1909:metrology
1892:etch back
1883:damascene
1616:oxidation
1381:Cleanroom
1334:soldering
1296:flip chip
1258:flip chip
1253:packages)
1223:smartcard
945:RCA clean
819:In 2011,
810:7 nm
646:In 1963,
446:7 nm
271:2 nm
253:3 nm
244:5 nm
235:7 nm
118:1 μm
100:3 μm
91:6 μm
7057:Archived
7025:Archived
6962:Archived
6871:26263093
6804:33182434
6510:25926459
6465:23881959
6332:35956689
6281:32122636
5694:Archived
5613:Archived
5584:Archived
5534:Archived
5458:Archived
5429:Archived
5400:Archived
4929:Archived
4775:Archived
4743:Archived
4683:Archived
4397:"FinFET"
4317:Archived
4288:Archived
4259:Archived
4230:Archived
4201:Archived
4169:Archived
4102:22 April
4033:Archived
3780:70599233
3745:EE Times
3242:: 12–15.
3194:Archived
3121:Archived
3086:Archived
3061:Archived
3028:Archived
3024:PC Gamer
2966:Archived
2641:Archived
2637:30883737
2590:25469704
2383:12369827
2213:See also
2145:antimony
1973:The fab
1850:tungsten
1781:back end
1585:against
1444:that is
1332:to make
855:SK Hynix
780:Broadcom
776:Qualcomm
326:Industry
7288:MOSFETs
6795:7664900
6772:Bibcode
6575:1589266
6122:1194426
5059:Bibcode
4925:Reuters
4876:Reuters
4501:6700881
3807:Bibcode
3265:Bibcode
2694:3240442
2532:2482339
2466:Bibcode
2288:(LOCOS)
2141:arsenic
2137:dopants
2008:corners
1777:created
1754:Qimonda
1658:epitaxy
1654:silicon
1620:silicon
1578:sources
1554:stepper
1521:Removal
1497:(ECD),
1493:(CVD),
1489:(PVD),
1336:easier)
1105:Epitaxy
1006:dopants
926:acetone
784:fabless
723:bipolar
576:History
419:Silicon
291:Density
264:Future
7168:
6912:
6869:
6802:
6792:
6741:
6688:
6662:
6598:
6573:
6563:
6508:
6498:
6463:
6453:
6396:
6330:
6279:
6245:
6218:
6192:
6165:
6120:
6086:
5973:
5932:
5886:
5859:
5832:
5805:
5778:
5751:
5724:
5668:
5367:
5336:
5309:
5187:
5146:
5120:
5019:
4960:
4499:
3965:
3929:
3841:
3778:
3702:
3584:
3548:
3394:
3368:
3328:
3186:
3127:6 July
3000:22 May
2906:22 May
2879:
2852:
2825:
2798:
2773:
2731:
2692:
2682:
2635:
2625:
2588:
2530:
2520:
2484:
2381:
2252:FinFET
2235:MOSFET
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