35:
530:: horizontal and vertical nanowires, horizontal nanosheet transistors (Samsung MBCFET, Intel Nanoribbon), vertical FET (VFET) and other vertical transistors, complementary FET (CFET), stacked FET, several kinds of horizontal gate-all-around transistors such as nano-ring, hexagonal wire, square wire, and round wire gate-all-around transistors and negative-capacitance FET (NC-FET) which uses drastically different materials.
578:, a unit equivalent to 0.1 nanometers. At the same time, they introduced a new process node naming scheme that aligned their product names with similar designations from their main competitors. Intel's 20A node was at that time projected to have been their first to move from FinFET to Gate-All-Around transistors (GAAFET); Intel's version was named '
538:
GAAFET transistor type. In July 2021, TSMC received governmental approval to build its 2 nm plant. In August 2020, it began building an R&D lab for 2 nm technology in
Hsinchu, expected to become partially operational by 2021. In September 2020, TSMC confirmed this and stated that it could also install production at
928:
presented a process technology roadmap which extends the current biannual cadence of node introduction and square-root-of-two node naming rule to 2036. The roadmap ends with process node "A2" (meant to represent a 2 angstrom node), named by analogy with TSMC's naming scheme to be introduced by then.
499:
As such, 2 nm is used primarily as a marketing term by the semiconductor industry to refer to a new, improved generation of chips in terms of increased transistor density (a higher degree of miniaturization), increased speed, and reduced power consumption compared to the previous 3 nm node
612:
roduction): the process previously remained on track for 2025 launch into mass production; number of nanosheets was projected to increase from 3 in "3GAP" to 4; the company worked on several improvements of metallization, namely "single-grain metal" for low-resistance vias and direct-etched metal
537:
chairman Mark Liu predicted chip scaling would continue to 3 nm and 2 nm nodes; however, as of 2019, other semiconductor specialists were undecided as to whether nodes beyond 3 nm could become viable. TSMC began research on 2 nm in 2019—expecting to transition from FinFET to
640:
In
September 2024, Intel announced they would no longer be moving forward with their 20A process node, instead focusing on the development of 18A. Intel projected that avoiding ramping production of 20A could save over half a billion dollars. Intel noted that they'd successfully implemented
636:
core fabbed on the N2 process using a high-performance standard library was 16.4% faster at the same power, saved 37.2% of power at the same speed, or was ~10% faster and saved ~20% of power simultaneously at the same voltage (0.8 V) compared to the core fabbed on N3E using 3-2 fin library.
998:
As of 2023, Intel, TSMC and
Samsung have all demonstrated CFET transistors. These transistors are made up of two stacked horizontal nanosheet transistors, one transistor is of the p-type (a pFET transistor) and the other transistor is of the n-type (an nFET transistor).
631:
In April 2023, at its
Technology Symposium, TSMC introduced two more processes of its 2 nm technology platform: "N2P" featuring backside power delivery and scheduled for 2026, and "N2X" for high-performance applications. It was also revealed that the
563:
countries signed a joint declaration to develop their entire semiconductor industry, including developing process nodes as small as 2 nm, as well as designing and manufacturing custom processors, assigning up to €145 billion in funds.
588:
In April 2022, TSMC announced its GAAFET N2 process technology would enter risk production phase at the end of 2024 and production phase in 2025. In July 2022, TSMC announced that its N2 process technology was expected to feature
1783:
1888:
652:
in their 20A process, accelerating 18A development. Intel's upcoming Arrow Lake family of processors, which were meant to use Intel 20A, will instead have dies sourced from "external partners" and packaged by Intel.
2311:
392:" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors. According to the projections contained in the 2021 update of the
913:
reported that they planned 18A production for 2025. Intel's
February 2022 roadmap added that 18A was previously expected to have delivered 10% improvement in performance per watt compared to Intel 20A.
1855:
2212:
585:
In
October 2021, at Samsung Foundry Forum 2021, Samsung announced it would start mass production with its MBCFET (multi-bridge channel FET, Samsung's version of GAAFET) 2 nm process in 2025.
1207:
1720:
1572:
1660:
556:'s 2019 roadmap scheduled potentially equivalent 3 nm and 2 nm nodes for 2025 and 2027, respectively, and in December 2019 announced plans for 1.4 nm production in 2029.
1775:
1877:
1633:
1098:
346:
574:
In July 2021, Intel unveiled its process node roadmap from 2021 onwards. The company confirmed their 2 nm process node called "Intel 20A", with "A" referring to an
2084:
2194:
1508:
593:
and was expected to offer 10–15% higher performance at iso power or 20–30% lower power at iso performance and over 20% higher transistor density compared to N3E.
1603:
543:
1972:
1369:
1847:
921:
In
December 2021, Vertical-Transport FET (VTFET) CMOS logic transistor design with a vertical nanosheet was demonstrated at sub-45 nm gate pitch.
339:
2034:
1260:
397:
1124:
1456:
400:(IEEE), a "2.1 nm node range label" is expected to have a contacted gate pitch of 45 nanometers and a tightest metal pitch of 20 nanometers.
1564:
1916:
1690:
1654:
1815:
1067:
571:
announced it had produced chips with 2 nm-class GAAFET transistors using three silicon layer nanosheets with a gate length of 12 nm.
482:
332:
1741:
393:
2048:
1176:
2067:
1747:
1625:
1991:
975:
646:
2213:"Samsung Electronics Unveils Plans for 1.4nm Process Technology and Investment for Production Capacity at Samsung Foundry Forum 2022"
2131:
596:
In July 2022, Samsung made a number of disclosures regarding the company's previously forthcoming process technology called "2GAP" (
1208:"Intel announces cancellation of 20A process node for Arrow Lake, goes with external nodes instead, likely TSMC [Updated]"
1339:
1426:
1151:"Apple Supplier TSMC Will Begin Trial Production Of 2nm Chips Next Week, Aiming To Secure A Stable Yield Before Mass Production"
2170:
2098:
1397:
1274:
1036:
506:
began risk production of its 2 nm process in July 2024, with mass production planned for the second half of 2025, and
47:
1486:
1537:
1516:
514:
initially forecasted production in 2024 but scrapped its 2 nm node in favor of the smaller 18 angstrom (18A) node.
2113:
1954:
918:'s August 2024 newsroom announcement further indicated that the 18A process should be manufacturing-ready for 2025 H1.
1595:
2285:
1361:
984:
air gaps to further reduce relative permittivity of intermetal dielectric and, therefore, interconnect capacitance;
22:
948:
1090:
995:
presented their future business goals, which at that time included an aim to mass-produce 1.4 nm by 2027.
1150:
2016:
1712:
1288:
1246:
582:'. Their 2021 roadmap scheduled the Intel 20A node for volume production in 2024 and Intel 18A for 2025.
362:
932:
Apart from the expected shrinking of transistor structures and interconnects, innovations forecasted by
550:, the company at that time expected to have been installing production equipment for 2 nm by 2023.
1232:
1091:"A Better Way to Measure Progress in Semiconductors: It's time to throw out the old Moore's Law metric"
616:
In August 2022, a consortium of
Japanese companies funded a new venture with government support called
1682:
279:
2132:"Intel 18A powered on and healthy, on track for next-gen client and server chip production next year"
1823:
1063:
1448:
1935:
2085:"Intel Unveils Meteor Lake Architecture: Intel 4 Heralds the Disaggregated Future of Mobile CPUs"
649:
590:
522:
By 2018, a number of transistor architectures had been proposed for the eventual replacement of
1973:"TSMC Outlines 2nm Plans: N2P Brings Backside Power Delivery in 2026, N2X Added To The Roadmap"
1596:"Intel's Manufacturing Roadmap from 2019 to 2029: Back Porting, 7nm, 5nm, 3nm, 2nm, and 1.4 nm"
314:
1848:"Samsung Foundry Innovations Power the Future of Big Data, AI/ML and Smart, Connected Devices"
1745:
1316:
2151:"Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices"
289:
2068:"TSMC 2nm Update: N2 in 2025, N2P Loses Backside Power, and NanoFlex Brings Optimal Cells"
2035:"Samsung Foundry Update: 2nm Unveil in June, Second-Gen SF3 3nm Hits Production This Year"
8:
992:
666:
2249:
2176:
969:
944:
1331:
940:
transistor architecture (forksheet FET, CFET, CFET with atomic (2D material) channel);
2180:
2166:
1418:
2230:
546:(2020), expectations were for high yield risk production in late 2023. According to
97:
2162:
2158:
1302:
1064:"TSMC's 7nm, 5nm, and 3nm "are just numbers… it doesn't matter what the number is""
304:
293:
274:
70:
61:
1751:
1391:
1042:
633:
319:
1125:"TSMC: Performance and Yields of 2nm on Track, Mass Production To Start In 2025"
987:
IC design innovations (2.5D chiplets, 3D interconnect), more advanced EDA tools.
106:
88:
79:
2150:
2049:"Samsung Foundry Unveils Updated Roadmap: BSPDN and 2nm Evolution Through 2027"
1626:"EU Signs €145bn Declaration to Develop Next Gen Processors and 2nm Technology"
1478:
1177:"Samsung Foundry Unveils Updated Roadmap: BSPDN and 2nm Evolution Through 2027"
958:
further reduction of standard cell height (eventually to "less than 4" tracks);
560:
299:
142:
136:
130:
124:
118:
112:
1543:
2305:
1419:"Highlights of the day: TSMC reportedly adopts GAA transistors for 2nm chips"
1261:"Intel's Stacked Nanosheet Transistors Could be the Next Step in Moore's Law"
309:
214:
205:
196:
187:
178:
169:
160:
151:
1917:"Samsung 3nm GAAFET Enters Risk Production; Discusses Next-Gen Improvements"
981:
new manufacturing techniques (subtractive metallization, direct metal etch);
2266:
952:
547:
452:
436:
420:
378:
241:
232:
223:
1015:
Under Intel's previous naming scheme this node was known as 'Intel 5 nm'.
374:
42:
2231:"Intel, Samsung, and TSMC Demo 3D-Stacked Transistors - IEEE Spectrum"
955:
in 2023, and the first production tool to be shipped to Intel in 2025;
2312:
International
Technology Roadmap for Semiconductors lithography nodes
965:
728:
642:
620:
for manufacturing of 2 nm chips. Rapidus signed agreements with
579:
385:
575:
539:
389:
34:
2195:"Imec Presents Sub-1nm Process and Transistor Roadmap Until 2036"
617:
507:
2282:
2274:
2270:
1776:"Intel's Process Roadmap to 2025: with 4nm, 3nm, 20A and 18A?!"
723:
718:
527:
523:
370:
2148:
1683:"IBM unveils 2-nanometer chip technology for faster computing"
1656:
Joint declaration on processors and semiconductor technologies
1393:
TSMC To
Commence 2nm Research In Hsinchu, Taiwan Claims Report
915:
910:
676:
553:
511:
1955:"Japan to Manufacture 2nm Chips With a Little Help From IBM"
1565:"Taiwan gives TSMC green light for most advanced chip plant"
1744:
2020 to be associated with the "1.5 nm" process node:
951:
tools with the first $ 400 million tool to be completed at
933:
925:
671:
621:
534:
503:
284:
1038:
INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMS: More Moore
625:
568:
1477:
Chien-Chung, Chang; Huang, Frances (23 September 2020),
2155:
2021 IEEE International Electron Devices Meeting (IEDM)
1740:
12 nm gate length is the dimension defined by the
2114:"Intel Reports First-Quarter 2024 Financial Results"
373:(metal–oxide–semiconductor field-effect transistor)
1509:"TSMC 2NM PROCESS MAKES A SIGNIFICANT BREAKTHROUGH"
1275:"Nanowire Transistors Could Keep Moore's Law Alive"
1713:"IBM Introduces the World's First 2-nm Node Chip"
961:back-side power distribution, buried power rails;
398:Institute of Electrical and Electronics Engineers
2303:
1911:
1909:
1476:
1449:"TSMC developing 2nm tech at new R&D center"
1769:
1767:
1765:
1763:
1761:
1759:
1542:(in Chinese), 22 September 2020, archived from
1088:
1118:
1116:
2091:
1906:
1362:"SPIE Conference Predicts Bumpy Chip Roadmap"
1353:
1289:"Nanowires give vertical transistors a boost"
1247:"What's Different About Next-Gen Transistors"
968:for metallization (interconnects), graphene,
526:, most of which were based on the concept of
394:International Roadmap for Devices and Systems
340:
2079:
2077:
1756:
2062:
2060:
2058:
1816:"Intel Charts Manufacturing Course to 2025"
1323:
1113:
1479:"TSMC to build 2nm wafer plant in Hsinchu"
613:interconnect planned for 2GAP and beyond.
347:
333:
2074:
1952:
1329:
1233:"The Increasingly Uneven Race to 3nm/2nm"
2055:
1965:
1809:
1807:
1805:
1803:
1801:
2247:
2111:
1953:Humphries, Matthew (13 December 2022).
1933:
1773:
1710:
1587:
1359:
1041:, IEEE, 2021, p. 7, archived from
2304:
2017:"Samsung Foundry: 2nm Silicon in 2025"
1680:
1342:from the original on 24 September 2018
1205:
1148:
542:depending on demand. According to the
2149:Jagannathan, H.; et al. (2021).
1842:
1840:
1813:
1798:
1623:
1389:
1332:"TSMC: Chip Scaling Could Accelerate"
1330:Patterson, Alan (12 September 2018),
656:
1989:
1786:from the original on 3 November 2021
1663:from the original on 11 January 2021
1636:from the original on 10 January 2021
1606:from the original on 12 January 2021
1575:from the original on 4 November 2021
1506:
1489:from the original on 25 October 2020
1459:from the original on 24 January 2021
1446:
1429:from the original on 23 October 2020
1400:from the original on 7 November 2020
1201:
1199:
1197:
1101:from the original on 2 December 2020
1934:Manners, David (16 December 2022).
1593:
510:plans to start production in 2025.
16:Semiconductor manufacturing process
13:
2241:
2112:Discuss, btarunr (26 April 2024).
2099:"Continued Momentum for Intel 18A"
1992:"Continued Momentum for Intel 18A"
1936:"Imec and Rapidus sign up for 2nm"
1837:
1174:
1122:
14:
2323:
1894:from the original on 15 July 2022
1858:from the original on 8 April 2022
1372:from the original on 27 June 2019
1206:Alcorn, Paul (4 September 2024).
1194:
1070:from the original on 17 June 2020
645:gate-all-around architecture and
2286:semiconductor device fabrication
1774:Cutress, Dr Ian (26 July 2021).
1624:Dahad, Nitin (9 December 2020),
1089:Samuel K. Moore (21 July 2020).
33:
2248:Merritt, Rick (26 March 2018),
2223:
2205:
2187:
2142:
2124:
2105:
2041:
2027:
2009:
1983:
1946:
1927:
1870:
1734:
1723:from the original on 7 May 2021
1704:
1693:from the original on 7 May 2021
1674:
1647:
1617:
1557:
1530:
1507:Udin, Efe (23 September 2020),
1500:
1470:
1440:
1411:
1383:
1317:"Transistor Options Beyond 3nm"
1309:
1295:
1281:
1267:
1253:
1009:
2163:10.1109/IEDM19574.2021.9720561
1990:Sell, ben (4 September 2024).
1711:Johnson, Dexter (6 May 2021),
1681:Nellis, Stephen (6 May 2021),
1390:Zafar, Ramish (12 June 2019),
1360:Merritt, Rick (4 March 2019),
1239:
1225:
1168:
1142:
1082:
1056:
1029:
904:
559:At the end of 2020, seventeen
1:
2250:"2nm: End of the Road ?"
1814:Santo, Brian (27 July 2021),
1539:台积电2nm工艺重大突破！2023年风险试产良率或达90%
1447:Wang, Lisa (26 August 2020),
1022:
517:
1878:"TSMC Q2 2022 Earnings Call"
735:Transistor density (MTr/mm)
7:
1149:Salman, Ali (9 July 2024).
799:Transistor gate pitch (nm)
363:semiconductor manufacturing
10:
2328:
2157:. pp. 26.1.1–26.1.4.
886:2026 H2 volume production
883:2026 H2 volume production
880:2025 H2 volume production
727:
722:
717:
675:
670:
665:
1002:
831:Interconnect pitch (nm)
767:SRAM bit-cell size (μm)
388:", or alternatively "20
2217:Samsung Global Newsroom
1659:, EU, 7 December 2020,
1303:"What's After FinFETs?"
896:2024 H2 risk production
889:2024 H1 risk production
875:2027 volume production
650:backside power delivery
591:backside power delivery
891:2024 volume production
872:2026 volume production
869:2026 volume production
866:2025 volume production
1425:, 21 September 2020,
1066:. 10 September 2019.
544:Taiwan Economic Daily
1750:24 June 2021 at the
1546:on 24 September 2021
978:for atomic channel);
878:2025 risk production
2101:. 4 September 2024.
1319:. 15 February 2018.
991:In September 2022,
943:deployment of high-
898:2025 H1 production
1940:Electronics Weekly
1854:. 7 October 2021.
1519:on 19 October 2021
1249:. 20 October 2022.
936:were as follows:
657:2 nm process nodes
628:in December 2022.
2300:
2299:
2292:Succeeded by
2219:. 4 October 2022.
2172:978-1-6654-2572-8
2023:. 6 October 2021.
1826:on 19 August 2021
1780:www.anandtech.com
1600:www.anandtech.com
1423:www.digitimes.com
1181:www.anandtech.com
1129:www.anandtech.com
902:
901:
497:
496:
396:published by the
379:3 nm process
367:2 nm process
357:
356:
2319:
2263:Preceded by
2260:
2259:
2256:
2235:
2234:
2227:
2221:
2220:
2209:
2203:
2202:
2191:
2185:
2184:
2146:
2140:
2139:
2138:. 6 August 2024.
2128:
2122:
2121:
2109:
2103:
2102:
2095:
2089:
2088:
2081:
2072:
2071:
2064:
2053:
2052:
2045:
2039:
2038:
2031:
2025:
2024:
2013:
2007:
2006:
2004:
2002:
1987:
1981:
1980:
1979:. 26 April 2023.
1969:
1963:
1962:
1950:
1944:
1943:
1931:
1925:
1924:
1913:
1904:
1903:
1901:
1899:
1893:
1887:. 14 July 2022.
1882:
1874:
1868:
1867:
1865:
1863:
1844:
1835:
1834:
1833:
1831:
1822:, archived from
1811:
1796:
1795:
1793:
1791:
1771:
1754:
1738:
1732:
1731:
1730:
1728:
1708:
1702:
1701:
1700:
1698:
1678:
1672:
1671:
1670:
1668:
1651:
1645:
1644:
1643:
1641:
1621:
1615:
1614:
1613:
1611:
1591:
1585:
1584:
1582:
1580:
1561:
1555:
1554:
1553:
1551:
1534:
1528:
1527:
1526:
1524:
1515:, archived from
1513:www.gizchina.com
1504:
1498:
1497:
1496:
1494:
1474:
1468:
1467:
1466:
1464:
1444:
1438:
1437:
1436:
1434:
1415:
1409:
1408:
1407:
1405:
1387:
1381:
1380:
1379:
1377:
1357:
1351:
1350:
1349:
1347:
1327:
1321:
1320:
1313:
1307:
1306:
1299:
1293:
1292:
1291:. 2 August 2012.
1285:
1279:
1278:
1271:
1265:
1264:
1257:
1251:
1250:
1243:
1237:
1236:
1229:
1223:
1222:
1220:
1218:
1203:
1192:
1191:
1189:
1187:
1172:
1166:
1165:
1163:
1161:
1146:
1140:
1139:
1137:
1135:
1120:
1111:
1110:
1108:
1106:
1086:
1080:
1079:
1077:
1075:
1060:
1054:
1053:
1052:
1050:
1045:on 7 August 2022
1033:
1016:
1013:
715:Transistor type
661:
660:
403:
402:
349:
342:
335:
305:Transistor count
258:
240:
231:
222:
213:
204:
195:
186:
177:
168:
159:
150:
105:
96:
87:
78:
69:
60:
37:
19:
18:
2327:
2326:
2322:
2321:
2320:
2318:
2317:
2316:
2302:
2301:
2293:
2264:
2254:www.eetasia.com
2244:
2242:Further reading
2239:
2238:
2229:
2228:
2224:
2211:
2210:
2206:
2193:
2192:
2188:
2173:
2147:
2143:
2130:
2129:
2125:
2110:
2106:
2097:
2096:
2092:
2083:
2082:
2075:
2066:
2065:
2056:
2047:
2046:
2042:
2033:
2032:
2028:
2015:
2014:
2010:
2000:
1998:
1988:
1984:
1971:
1970:
1966:
1951:
1947:
1932:
1928:
1915:
1914:
1907:
1897:
1895:
1891:
1880:
1876:
1875:
1871:
1861:
1859:
1846:
1845:
1838:
1829:
1827:
1820:www.eetimes.com
1812:
1799:
1789:
1787:
1772:
1757:
1752:Wayback Machine
1739:
1735:
1726:
1724:
1709:
1705:
1696:
1694:
1679:
1675:
1666:
1664:
1653:
1652:
1648:
1639:
1637:
1622:
1618:
1609:
1607:
1592:
1588:
1578:
1576:
1563:
1562:
1558:
1549:
1547:
1536:
1535:
1531:
1522:
1520:
1505:
1501:
1492:
1490:
1475:
1471:
1462:
1460:
1453:taipeitimes.com
1445:
1441:
1432:
1430:
1417:
1416:
1412:
1403:
1401:
1388:
1384:
1375:
1373:
1366:www.eetasia.com
1358:
1354:
1345:
1343:
1336:www.eetimes.com
1328:
1324:
1315:
1314:
1310:
1305:. 24 July 2017.
1301:
1300:
1296:
1287:
1286:
1282:
1273:
1272:
1268:
1259:
1258:
1254:
1245:
1244:
1240:
1231:
1230:
1226:
1216:
1214:
1204:
1195:
1185:
1183:
1175:Shilov, Anton.
1173:
1169:
1159:
1157:
1147:
1143:
1133:
1131:
1123:Shilov, Anton.
1121:
1114:
1104:
1102:
1087:
1083:
1073:
1071:
1062:
1061:
1057:
1048:
1046:
1035:
1034:
1030:
1025:
1020:
1019:
1014:
1010:
1005:
973:
964:new materials (
907:
897:
892:
890:
879:
863:Release status
659:
634:ARM Cortex-A715
520:
353:
324:
320:Nanoelectronics
271:
265:
256:
247:
238:
229:
220:
211:
202:
193:
184:
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148:
103:
94:
85:
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67:
58:
45:
26:
24:
17:
12:
11:
5:
2325:
2315:
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2298:
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2290:
2279:
2258:
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2240:
2237:
2236:
2222:
2204:
2201:. 21 May 2022.
2199:Tom's Hardware
2186:
2171:
2141:
2123:
2104:
2090:
2073:
2054:
2040:
2026:
2008:
1982:
1964:
1945:
1926:
1923:. 5 July 2022.
1905:
1869:
1836:
1797:
1755:
1733:
1703:
1673:
1646:
1630:www.eetimes.eu
1616:
1594:Cutress, Ian,
1586:
1556:
1529:
1499:
1483:focustaiwan.tw
1469:
1439:
1410:
1382:
1352:
1322:
1308:
1294:
1280:
1266:
1252:
1238:
1235:. 24 May 2021.
1224:
1212:Tom's Hardware
1193:
1167:
1141:
1112:
1081:
1055:
1027:
1026:
1024:
1021:
1018:
1017:
1007:
1006:
1004:
1001:
989:
988:
985:
982:
979:
971:
962:
959:
956:
941:
909:In July 2021,
906:
903:
900:
899:
894:
887:
884:
881:
876:
873:
870:
867:
864:
860:
859:
856:
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835:
832:
828:
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824:
821:
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815:
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806:
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800:
796:
795:
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789:
786:
783:
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771:
768:
764:
763:
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757:
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748:
745:
742:
739:
736:
732:
731:
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721:
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712:
711:
708:
705:
702:
699:
696:
693:
690:
687:
684:
680:
679:
674:
669:
664:
658:
655:
561:European Union
533:In late 2018,
519:
516:
495:
494:
491:
488:
485:
479:
478:
475:
472:
469:
465:
464:
461:
458:
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439:
433:
432:
429:
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407:
355:
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344:
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252:
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236:
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191:
182:
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146:
140:
134:
128:
122:
116:
110:
101:
92:
83:
74:
65:
55:
52:
51:
43:MOSFET scaling
39:
38:
30:
29:
15:
9:
6:
4:
3:
2:
2324:
2313:
2310:
2309:
2307:
2296:
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2255:
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2218:
2214:
2208:
2200:
2196:
2190:
2182:
2178:
2174:
2168:
2164:
2160:
2156:
2152:
2145:
2137:
2133:
2127:
2119:
2115:
2108:
2100:
2094:
2086:
2080:
2078:
2069:
2063:
2061:
2059:
2050:
2044:
2036:
2030:
2022:
2018:
2012:
1997:
1993:
1986:
1978:
1974:
1968:
1960:
1956:
1949:
1941:
1937:
1930:
1922:
1921:WikiChip Fuse
1918:
1912:
1910:
1890:
1886:
1879:
1873:
1857:
1853:
1849:
1843:
1841:
1825:
1821:
1817:
1810:
1808:
1806:
1804:
1802:
1785:
1781:
1777:
1770:
1768:
1766:
1764:
1762:
1760:
1753:
1749:
1746:
1743:
1737:
1722:
1718:
1717:IEEE Spectrum
1714:
1707:
1692:
1688:
1684:
1677:
1662:
1658:
1657:
1650:
1635:
1631:
1627:
1620:
1605:
1601:
1597:
1590:
1574:
1570:
1566:
1560:
1545:
1541:
1540:
1533:
1518:
1514:
1510:
1503:
1488:
1484:
1480:
1473:
1458:
1454:
1450:
1443:
1428:
1424:
1420:
1414:
1399:
1395:
1394:
1386:
1371:
1367:
1363:
1356:
1341:
1337:
1333:
1326:
1318:
1312:
1304:
1298:
1290:
1284:
1276:
1270:
1262:
1256:
1248:
1242:
1234:
1228:
1213:
1209:
1202:
1200:
1198:
1182:
1178:
1171:
1156:
1152:
1145:
1130:
1126:
1119:
1117:
1100:
1096:
1095:IEEE Spectrum
1092:
1085:
1069:
1065:
1059:
1044:
1040:
1039:
1032:
1028:
1012:
1008:
1000:
996:
994:
986:
983:
980:
977:
974:
967:
963:
960:
957:
954:
950:
946:
942:
939:
938:
937:
935:
930:
927:
924:In May 2022,
922:
919:
917:
912:
895:
893:Canceled 2024
888:
885:
882:
877:
874:
871:
868:
865:
862:
861:
857:
854:
851:
848:
845:
842:
839:
836:
833:
830:
829:
825:
822:
819:
816:
813:
810:
807:
804:
801:
798:
797:
793:
790:
787:
784:
781:
778:
775:
772:
769:
766:
765:
761:
758:
755:
752:
749:
746:
743:
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737:
734:
733:
730:
725:
720:
714:
713:
709:
706:
703:
700:
697:
694:
691:
688:
685:
683:Process name
682:
681:
678:
673:
668:
663:
662:
654:
651:
648:
644:
638:
635:
629:
627:
623:
619:
614:
611:
607:
603:
599:
594:
592:
586:
583:
581:
577:
572:
570:
567:In May 2021,
565:
562:
557:
555:
551:
549:
545:
541:
536:
531:
529:
525:
515:
513:
509:
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350:
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343:
338:
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331:
330:
328:
327:
321:
318:
316:
313:
311:
310:Semiconductor
308:
306:
303:
301:
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291:
288:
286:
283:
281:
278:
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272:
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255:
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243:
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228:
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216:
210:
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201:
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156:
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147:
144:
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138:
135:
132:
129:
126:
123:
120:
117:
114:
111:
108:
102:
99:
93:
90:
84:
81:
75:
72:
66:
63:
57:
56:
54:
53:
49:
48:process nodes
44:
41:
40:
36:
32:
31:
28:
23:Semiconductor
21:
20:
2294:
2281:
2265:
2253:
2225:
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2207:
2198:
2189:
2154:
2144:
2135:
2126:
2117:
2107:
2093:
2043:
2029:
2020:
2011:
2001:11 September
1999:. Retrieved
1995:
1985:
1976:
1967:
1958:
1948:
1939:
1929:
1920:
1896:. Retrieved
1884:
1872:
1860:. Retrieved
1851:
1828:, retrieved
1824:the original
1819:
1788:. Retrieved
1779:
1736:
1725:, retrieved
1716:
1706:
1695:, retrieved
1686:
1676:
1665:, retrieved
1655:
1649:
1638:, retrieved
1629:
1619:
1610:23 September
1608:, retrieved
1599:
1589:
1577:. Retrieved
1568:
1559:
1550:24 September
1548:, retrieved
1544:the original
1538:
1532:
1523:24 September
1521:, retrieved
1517:the original
1512:
1502:
1493:23 September
1491:, retrieved
1482:
1472:
1463:23 September
1461:, retrieved
1452:
1442:
1433:23 September
1431:, retrieved
1422:
1413:
1404:23 September
1402:, retrieved
1392:
1385:
1376:23 September
1374:, retrieved
1365:
1355:
1346:23 September
1344:, retrieved
1335:
1325:
1311:
1297:
1283:
1269:
1255:
1241:
1227:
1217:10 September
1215:. Retrieved
1211:
1186:10 September
1184:. Retrieved
1180:
1170:
1160:10 September
1158:. Retrieved
1154:
1144:
1134:10 September
1132:. Retrieved
1128:
1103:. Retrieved
1094:
1084:
1072:. Retrieved
1058:
1047:, retrieved
1043:the original
1037:
1031:
1011:
997:
990:
931:
923:
920:
908:
639:
630:
615:
609:
605:
601:
597:
595:
587:
584:
573:
566:
558:
552:
532:
521:
502:
500:generation.
498:
384:The term "2
383:
369:is the next
366:
360:
358:
262: ~ 2025
259:
244: – 2022
235: – 2020
226: – 2018
217: – 2016
208: – 2014
199: – 2012
190: – 2010
181: – 2009
172: – 2007
163: – 2005
154: – 2003
145: – 2001
139: – 1999
133: – 1996
127: – 1993
121: – 1990
115: – 1987
109: – 1984
100: – 1981
91: – 1977
82: – 1974
73: – 1971
64: – 1968
2267:"3 nm"
2118:TechPowerUp
1569:Nikkei Asia
905:Beyond 2 nm
412:Metal pitch
300:Moore's law
143:130 nm
137:180 nm
131:250 nm
125:350 nm
119:600 nm
113:800 nm
98:1.5 μm
27:fabrication
1023:References
608:ll-around
518:Background
490:16 nm
487:42 nm
474:20 nm
471:45 nm
460:24 nm
457:48 nm
444:30 nm
441:51 nm
428:40 nm
425:60 nm
409:Gate pitch
377:after the
375:die shrink
294:multi-gate
275:Half-nodes
215:10 nm
206:14 nm
197:22 nm
188:28 nm
179:32 nm
170:45 nm
161:65 nm
152:90 nm
71:10 μm
62:20 μm
2181:247321213
2021:AnandTech
1977:AnandTech
1830:11 August
1667:9 January
1640:9 January
1579:24 August
976:monolayer
966:ruthenium
858:Unknown
852:Unknown
843:Unknown
826:Unknown
820:Unknown
811:Unknown
794:Unknown
788:Unknown
779:Unknown
762:Unknown
756:Unknown
747:Unknown
729:RibbonFET
643:RibbonFET
580:RibbonFET
483:1 nm
468:2 nm
453:3 nm
437:5 nm
421:7 nm
386:nanometer
260:2 nm
242:3 nm
233:5 nm
224:7 nm
107:1 μm
89:3 μm
80:6 μm
2306:Category
1889:Archived
1856:Archived
1784:Archived
1748:Archived
1721:archived
1691:archived
1661:archived
1634:archived
1604:archived
1573:Archived
1487:archived
1457:archived
1427:archived
1398:archived
1370:archived
1340:archived
1155:Wccftech
1105:20 April
1099:Archived
1097:. IEEE.
1074:20 April
1068:Archived
1049:7 August
855:Unknown
849:Unknown
846:Unknown
840:Unknown
837:Unknown
834:Unknown
823:Unknown
817:Unknown
814:Unknown
808:Unknown
805:Unknown
802:Unknown
791:Unknown
785:Unknown
782:Unknown
776:Unknown
773:Unknown
770:Unknown
759:Unknown
753:Unknown
750:Unknown
744:Unknown
741:Unknown
738:Unknown
647:PowerVia
576:angstrom
540:Taichung
390:angstrom
315:Industry
2295:unknown
2288:process
1898:22 July
1852:Samsung
1790:27 July
1687:Reuters
993:Samsung
947:(0.55)
667:Samsung
618:Rapidus
508:Samsung
406:Process
280:Density
253:Future
2283:MOSFET
2275:GAAFET
2271:FinFET
2179:
2169:
724:GAAFET
719:MBCFET
548:Nikkei
528:GAAFET
524:FinFET
381:node.
371:MOSFET
365:, the
290:Device
95:
25:device
2177:S2CID
2136:Intel
1996:Intel
1959:PCMAG
1892:(PDF)
1881:(PDF)
1862:9 May
1727:7 May
1697:6 May
1003:Notes
916:Intel
911:Intel
695:SF2Z
677:Intel
554:Intel
512:Intel
493:2027
477:2025
463:2022
447:2020
431:2018
415:Year
2167:ISBN
2003:2024
1900:2022
1885:TSMC
1864:2022
1832:2021
1792:2021
1742:IRDS
1729:2021
1699:2021
1669:2021
1642:2021
1612:2020
1581:2021
1552:2021
1525:2021
1495:2020
1465:2020
1435:2020
1406:2020
1378:2020
1348:2020
1219:2024
1188:2024
1162:2024
1136:2024
1107:2021
1076:2020
1051:2022
953:ASML
934:imec
926:imec
710:18A
704:N2X
692:SF2X
689:SF2P
672:TSMC
624:and
622:imec
604:ate
535:TSMC
504:TSMC
285:CMOS
2159:doi
949:EUV
707:20A
701:N2P
686:SF2
626:IBM
600:nm
569:IBM
361:In
2308::
2252:,
2215:.
2197:.
2175:.
2165:.
2153:.
2134:.
2116:.
2076:^
2057:^
2019:.
1994:.
1975:.
1957:.
1938:.
1919:.
1908:^
1883:.
1850:.
1839:^
1818:,
1800:^
1782:.
1778:.
1758:^
1719:,
1715:,
1689:,
1685:,
1632:,
1628:,
1602:,
1598:,
1571:.
1567:.
1511:,
1485:,
1481:,
1455:,
1451:,
1421:,
1396:,
1368:,
1364:,
1338:,
1334:,
1210:.
1196:^
1179:.
1153:.
1127:.
1115:^
1093:.
970:WS
945:NA
698:N2
257:00
239:00
230:00
221:00
104:00
86:00
77:00
2277:)
2273:/
2269:(
2233:.
2183:.
2161::
2120:.
2087:.
2070:.
2051:.
2037:.
2005:.
1961:.
1942:.
1902:.
1866:.
1794:.
1583:.
1277:.
1263:.
1221:.
1190:.
1164:.
1138:.
1109:.
1078:.
972:2
610:P
606:A
602:G
598:2
348:e
341:t
334:v
296:)
292:(
212:0
203:0
194:0
185:0
176:0
167:0
158:0
149:0
68:0
59:0
50:)
46:(
Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.
