386:
error factor begins to exceed one, i.e., the dimension error on the wafer may be more than 1/4 the dimension error on the mask, and the second is that the mask feature is becoming smaller, and the dimension tolerance is approaching a few nanometers. For example, a 25 nm wafer pattern should correspond to a 100 nm mask pattern, but the wafer tolerance could be 1.25 nm (5% spec), which translates into 5 nm on the photomask. The variation of electron beam scattering in directly writing the photomask pattern can easily well exceed this.
399:
patterns so that moderate-to-small sized particles that land on the pellicle will be too far out of focus to print. Although they are designed to keep particles away, pellicles become a part of the imaging system and their optical properties need to be taken into account. Pellicles material are
Nitrocellulose and made for various Transmission Wavelengths. Current pellicles are made from polysilicon, and companies are exploring other materials for high-NA EUV and future chip making processes.
31:
403:
39:
189:
105:)) and the unwanted rubylith was peeled off by hand, forming the master image of that layer of the chip, often called "artwork". Increasingly complex and thus larger chips required larger and larger rubyliths, eventually even filling the wall of a room, and artworks were to be photographically reduced to produce photomasks (Eventually this whole process was replaced by the
394:
The term "pellicle" is used to mean "film", "thin film", or "membrane." Beginning in the 1960s, thin film stretched on a metal frame, also known as a "pellicle", was used as a beam splitter for optical instruments. It has been used in a number of instruments to split a beam of light without causing
385:
Leading-edge photomasks (pre-corrected) images of the final chip patterns are magnified by four times. This magnification factor has been a key benefit in reducing pattern sensitivity to imaging errors. However, as features continue to shrink, two trends come into play: the first is that the mask
130:
off the wafer and onto the photomask and it had to be cleaned or discarded. This drove the adoption of reverse master photomasks (see above), which were used to produce (with contact photolithography and etching) the needed many actual working photomasks. Later, projection photo-lithography meant
357:
has a strong impact on photomask requirements. The commonly used attenuated phase-shifting mask is more sensitive to the higher incidence angles applied in "hyper-NA" lithography, due to the longer optical path through the patterned film. During manufacturing, inspection using a special form of
398:
Particle contamination can be a significant problem in semiconductor manufacturing. A photomask is protected from particles by a pellicle – a thin transparent film stretched over a frame that is glued over one side of the photomask. The pellicle is far enough away from the mask
310:" from position to position under the optical column or the stepper lens until full exposure of the wafer is achieved. A photomask with several copies of the integrated circuit design is used to reduce the number of steppings required to expose the entire wafer, thus increasing productivity.
192:
A simulated photomask. The thicker features are the integrated circuit that is desired to be printed on the wafer. The thinner features are assists that do not print themselves but help the integrated circuit print better out-of-focus. The zig-zag appearance of the photomask is because
302:
circuit. (However, some photolithography fabrications utilize reticles with more than one layer placed side by side onto the same mask, used as copies to create several identical integrated circuits from one photomask). In modern usage, the terms reticle and photomask are synonymous.
349:
found that thinner absorbers degrade image contrast and therefore contribute to line-edge roughness, using state-of-the-art photolithography tools. One possibility is to eliminate absorbers altogether and use "chromeless" masks, relying solely on phase-shifting for imaging.
395:
an optical path shift due to its small film thickness. In 1978, Shea et al. at IBM patented a process to use the "pellicle" as a dust cover to protect a photomask or reticle. In the context of this entry, "pellicle" means "thin film dust cover to protect a photomask".
118:
The reticle was by step-and-repeater photolithography and etching used to produce a photomask with image-size the same as the final chip. The photomask might be used directly in the fab or be used as master-photomask to produce the final actual working photomasks.
81:. A curvilinear photomask has patterns with curves, which is a departure from conventional photomasks which only have patterns that are completely vertical or horizontal, known as manhattan geometry. These photomasks require special equipment to manufacture.
320:
to enhance the image quality to acceptable values. This can be achieved in many ways. The two most common methods are to use an attenuated phase-shifting background film on the mask to increase the contrast of small intensity peaks, or to etch the exposed
286:. In the case of a photomask, there is a one-to-one correspondence between the mask pattern and the wafer pattern. The mask covered the entire surface of the wafer which was exposed in its entirety in one shot. This was the standard for the 1:1
511:. As many as 30 masks (of varying price) may be required to form a complete mask set. As modern chips are built in several layers stacked on top of each other, at least one mask is required for each of these layers.
429:
Mask
Industry Assessment which includes current industry analysis and the results of their annual photomask manufacturers survey. The following companies are listed in order of their global market share (2009 info):
807:
325:
so that the edge between the etched and unetched areas can be used to image nearly zero intensity. In the second case, unwanted edges would need to be trimmed out with another exposure. The former method is
895:
501:
The worldwide photomask market was estimated as $ 3.2 billion in 2012 and $ 3.1 billion in 2013. Almost half of the market was from captive mask shops (in-house mask shops of major chipmakers).
306:
In a modern stepper or scanner, the pattern in the photomask is projected and shrunk by four or five times onto the wafer surface. To achieve complete wafer coverage, the wafer is repeatedly "
345:, photomask features that are 4× larger must inevitably shrink as well. This could pose challenges since the absorber film will need to become thinner, and hence less opaque. A 2005 study by
860:
358:
microscopy called CD-SEM (Critical-Dimension
Scanning Electron Microscopy) is used to measure critical dimensions on photomasks which are the dimensions of the patterns on a photomask.
106:
298:
with reduction optics. As used in steppers and scanners which use image projection, the reticle commonly contains only one copy, also called one layer of the designed
956:
1048:
1203:
Capital-intensive industry. Investment levels….. – ~$ 40M for 'conventional' (180-nm node or above) – >$ 100M for 'advanced' (130-nm node and beyond)
504:
The costs of creating new mask shop for 180 nm processes were estimated in 2005 as $ 40 million, and for 130 nm - more than $ 100 million.
1186:
740:
1271:
330:, and is often considered a weak enhancement, requiring special illumination for the most enhancement, while the latter method is known as
525:
987:
1216:
224:, 248 nm, and 193 nm. Photomasks have also been developed for other forms of radiation such as 157 nm, 13.5 nm (
54:) is an opaque plate with transparent areas that allow light to shine through in a defined pattern. Photomasks are commonly used in
77:
In photolithography, several masks are used in turn, each one reproducing a layer of the completed design, and together known as a
1266:
894:
Eom, Tae-Seung; Lim, Chang M.; Kim, Seo-Min; Kim, Hee-Bom; Oh, Se-Young; Ma, Won-Kwang; Moon, Seung-Chan; Shin, Ki S. (2003).
1072:
Hughes, Greg; Henry Yun (2009-10-01). "Mask industry assessment: 2009". In
Zurbrick, Larry S.; Montgomery, M. Warren (eds.).
791:
716:
686:
660:
1035:
781:
963:
676:
650:
483:
122:
As feature size shrank, the only way to properly focus the image was to place it in direct contact with the wafer. These
942:
366:
765:
248:
225:
109:
to produce the master image). At this point the master image could be arrayed into a multi-chip image called a
299:
194:
536:
97:
sheet was used. The design of one layer was cut into the rubylith, initially by hand on an illuminated
17:
507:
The purchase price of a photomask, in 2006, could range from $ 250 to $ 100,000 for a single high-end
896:"Comparative study of chromeless and attenuated phase shift mask for 0.3-k 1 ArF lithography of DRAM"
520:
163:
34:
A photomask. This photomask has 20 copies, also called layers, of the same circuit pattern or design.
1195:
1125:
636:
287:
354:
1077:
313:
171:
1188:
An
Analysis of the Economics of Photomask Manufacturing Part – 1: The Economic Environment
8:
1248:
1036:
https://community.cadence.com/cadence_blogs_8/b/breakfast-bytes/posts/what-is-high-na-euv
434:
260:
123:
1185:
Weber, Charles M.; Berglund, C. Neil (February 9, 2005). "The Mask Shop's
Perspective".
1081:
1239:
1113:
1101:
911:
876:
734:
618:
271:
183:
59:
42:
A schematic illustration of a photomask (top) and an IC layer printed using it (bottom)
1093:
981:
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722:
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682:
656:
610:
589:
Diaz, S.L.M.; Fowler, J.W.; Pfund, M.E.; Mackulak, G.T.; Hickie, M. (November 2005).
565:
491:
159:
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369:
work by reflecting light, which is achieved by using multiple alternating layers of
1243:
1231:
1085:
903:
868:
602:
591:"Evaluating the Impacts of Reticle Requirements in Semiconductor Wafer Fabrication"
508:
450:
317:
240:; but these require entirely new materials for the substrate and the pattern film.
55:
755:
531:
475:
467:
267:
210:
402:
174:
systems which generate reticles directly from the original computerized design.
1217:"Mask Cost and Profitability in Photomask Manufacturing: An Empirical Analysis"
590:
546:
541:
445:
98:
821:
Lithography experts back higher magnification in photomasks to ease challenges
726:
1260:
1097:
614:
495:
338:
244:
162:
were introduced. The original pattern generators have since been replaced by
143:
1235:
606:
706:
263:
techniques, a photomask would correspond to a subset of the layer pattern.
202:
151:
147:
295:
256:
135:
photo-lithography used reticles directly and ended the use of photomasks.
30:
127:
861:"Chromeless phase-shifted masks: A new approach to phase-shifting masks"
370:
342:
139:
1089:
907:
859:
Toh, Kenny K.; Dao, Giang T.; Singh, Rajeev R.; Gaw, Henry T. (1991).
872:
416:
233:
221:
1140:
131:
photomask lifetime was indefinite. Still later direct-step-on-wafer
38:
426:
206:
155:
90:
1164:"SEMI Reports 2013 Semiconductor Photomask Sales of $ 3.1 Billion"
115:. The reticle was originally a 10X larger image of a single chip.
1163:
487:
374:
307:
291:
252:
188:
102:
67:
1141:"Semiconductor Photomask Market: Forecast $ 3.5 Billion in 2014"
220:
metal absorbing film. Photomasks are used at wavelengths of 365
70:). In semiconductor manufacturing, a mask is sometimes called a
439:
322:
1214:
1026:
W-H. Cheng and J. Farnsworth, Proc. SPIE 6607, 660724 (2007).
463:
410:
229:
167:
94:
63:
1215:
Weber, C.M; Berglund, C.N.; Gabella, P. (13 November 2006).
754:
Rizvi, Syed (2005). "1.3 The
Technology History of Masks".
479:
422:
346:
237:
1194:. ISMT Mask Automation Workshop. p. 6. Archived from
89:
For IC production in the 1960s and early 1970s, an opaque
943:"CD-SEM: Critical-Dimension Scanning Electron Microscope"
471:
334:, and is the most popular strong enhancement technique.
588:
380:
425:
Annual
Conference, Photomask Technology reports the
1161:
274:devices, there was a distinction between the term
201:Lithographic photomasks are typically transparent
138:Photomask materials changed over time. Initially
1258:
1224:IEEE Transactions on Semiconductor Manufacturing
595:IEEE Transactions on Semiconductor Manufacturing
494:, have their own large maskmaking facilities or
62:(ICs or "chips") to produce a pattern on a thin
1071:
316:150 nm or below in size generally require
858:
839:
757:Handbook of Photomask Manufacturing Technology
678:Handbook of Photomask Manufacturing Technology
1184:
1162:Tracy, Dan; Deborah Geiger (April 14, 2014).
1076:. Vol. 7488. pp. 748803–748803–13.
1046:
259:, and individually selected for exposure. In
205:plates covered with a pattern defined with a
893:
526:Integrated circuit layout design protection
197:was applied to it to create a better print.
739:: CS1 maint: location missing publisher (
655:. John Wiley & Sons. 29 October 2010.
411:Leading commercial photomask manufacturers
922:
826:
266:Historically in photolithography for the
1138:
401:
187:
37:
29:
1143:. SEMI Industry Research and Statistics
704:
14:
1259:
986:: CS1 maint: archived copy as title (
902:. Vol. 5040. pp. 1310–1320.
637:"The Quest for Curvilinear Photomasks"
753:
865:10th Annual Symp on Microlithography
700:
698:
381:Mask error enhancement factor (MEEF)
1272:Semiconductor fabrication equipment
498:with the abovementioned companies.
332:alternating-aperture phase-shifting
247:, each defining a pattern layer in
24:
867:. Vol. 1496. pp. 27–53.
361:
93:film laminated onto a transparent
25:
1283:
1004:, Proc. SPIE 7140, 714007 (2008).
695:
251:, is fed into a photolithography
652:Introduction to Microfabrication
1208:
1178:
1155:
1132:
1065:
1049:"Optical behavior of pellicles"
1047:Chris A. Mack (November 2007).
1040:
1029:
1020:
1007:
994:
949:
935:
932:, vol. 5992, pp. 306-316 (2005)
887:
852:
849:, vol. 5853, pp. 243-251 (2005)
814:
711:. Ankaj Gupta. Abingdon, Oxon.
1267:Lithography (microfabrication)
1139:Chamness, Lara (May 7, 2013).
1017:, Proc. SPIE 5256, 673 (2003).
836:, vol. 4889, pp. 50-58 (2002).
800:
774:
747:
708:Integrated circuit fabrication
669:
643:
629:
582:
558:
249:integrated circuit fabrication
13:
1:
681:. CRC Press. 3 October 2018.
552:
406:Pellicle Mounting Machine MLI
900:Optical Microlithography XVI
863:. In Wiley, James N. (ed.).
389:
195:optical proximity correction
158:which has better opacity to
7:
1249:doi:10.1109/TSM.2006.883577
537:Nanochannel glass materials
514:
177:
10:
1288:
760:. CRC Press. p. 728.
414:
181:
154:to control expansion, and
84:
1074:Photomask Technology 2009
898:. In Yen, Anthony (ed.).
783:Principles of Lithography
705:Shubham, Kumar n (2021).
521:Computational lithography
462:Major chipmakers such as
328:attenuated phase-shifting
164:electron beam lithography
126:often lifted some of the
107:optical pattern generator
1236:10.1109/TSM.2006.883577
607:10.1109/TSM.2005.858502
566:"Reticle Manufacturing"
455:Taiwan Mask Corporation
290:that were succeeded by
170:-driven mask writer or
1053:Microlithography World
407:
198:
58:for the production of
50:(also simply called a
43:
35:
27:Photolithographic tool
845:M. Yoshizawa et al.,
405:
355:immersion lithography
191:
66:of material (usually
41:
33:
786:. SPIE Press. 2005.
172:maskless lithography
1082:2009SPIE.7488E..03H
928:C. A. Mack et al.,
435:Dai Nippon Printing
101:(later by machine (
60:integrated circuits
408:
272:integrated circuit
199:
184:Photographic plate
44:
36:
1251:; page 23 table 1
1090:10.1117/12.832722
908:10.1117/12.485452
793:978-0-8194-5660-1
718:978-1-000-39644-7
688:978-1-4200-2878-2
662:978-1-119-99189-2
492:Micron Technology
353:The emergence of
245:set of photomasks
160:ultraviolet light
16:(Redirected from
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1024:
1018:
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1005:
998:
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991:
985:
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968:
962:. Archived from
961:
953:
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920:
919:
891:
885:
884:
873:10.1117/12.29750
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843:
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832:Y. Sato et al.,
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639:. 15 April 2021.
633:
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586:
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579:
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562:
528:(or "Mask work")
509:phase-shift mask
451:Hoya Corporation
337:As leading-edge
261:multi-patterning
124:contact aligners
56:photolithography
21:
1287:
1286:
1282:
1281:
1280:
1278:
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1201:on 2016-03-03.
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957:"Archived copy"
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823:// EETimes 2000
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532:Mask inspection
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468:Globalfoundries
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362:EUV lithography
282:, and the term
268:mass production
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146:opacity. Later
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23:
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12:
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601:(4): 622–632.
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547:Stepping level
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542:SMIF interface
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446:Photronics Inc
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415:Main article:
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1168:. Retrieved
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1145:. Retrieved
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1056:. Retrieved
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971:. Retrieved
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1170:6 September
1147:6 September
128:photoresist
1261:Categories
1058:2008-09-13
1013:C-J. Chen
973:2019-06-23
930:Proc. SPIE
847:Proc. SPIE
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727:1246513110
575:2024-01-05
553:References
442:Photomasks
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209:(Cr) or
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