503:
high-energy wavelengths, many transitions are excited by electron beams, and heating and outgassing are still a concern. The dissociation energy for a C-C bond is 3.6 eV. Secondary electrons generated by primary ionizing radiation have energies sufficient to dissociate this bond, causing scission. In addition, the low-energy electrons have a longer photoresist interaction time due to their lower speed; essentially the electron has to be at rest with respect to the molecule in order to react most strongly via dissociative electron attachment, where the electron comes to rest at the molecule, depositing all its kinetic energy. The resulting scission breaks the original polymer into segments of lower molecular weight, which are more readily dissolved in a solvent, or else releases other chemical species (acids) which catalyze further scission reactions (see the discussion on chemically amplified resists below). It is not common to select photoresists for electron-beam exposure. Electron beam lithography usually relies on resists dedicated specifically to electron-beam exposure.
208:
793:
399:
391:
216:
817:
119:
131:
58:
749:
692:. One unique property of SU-8 is that it is very difficult to strip. As such, it is often used in applications where a permanent resist pattern (one that is not strippable, and can even be used in harsh temperature and pressure environments) is needed for a device. Mechanism of epoxy-based polymer is shown in 1.2.3 SU-8. SU-8 is prone to swelling at smaller feature sizes, which has led to the development of small-molecule alternatives that are capable of obtaining higher resolutions than SU-8.
741:
54:
positive photoresist, the photo-sensitive material is degraded by light and the developer will dissolve away the regions that were exposed to light, leaving behind a coating where the mask was placed. In the case of a negative photoresist, the photosensitive material is strengthened (either polymerized or cross-linked) by light, and the developer will dissolve away only the regions that were not exposed to light, leaving behind a coating in areas where the mask was not placed.
841:
494:" electrons is the main absorption mechanism. Above 20 eV, inner electron ionization and Auger transitions become more important. Photon absorption begins to decrease as the X-ray region is approached, as fewer Auger transitions between deep atomic levels are allowed for the higher photon energy. The absorbed energy can drive further reactions and ultimately dissipates as heat. This is associated with the outgassing and contamination from the photoresist.
435:
597:' reactions; hence, fewer photons or electrons are needed. Acid diffusion is important not only to increase photoresist sensitivity and throughput, but also to limit line edge roughness due to shot noise statistics. However, the acid diffusion length is itself a potential resolution limiter. In addition, too much diffusion reduces chemical contrast, leading again to more roughness.
788:
is one of the most important uses of photoresist. Photolithography allows the complex wiring of an electronic system to be rapidly, economically, and accurately reproduced as if run off a printing press. The general process is applying photoresist, exposing image to ultraviolet rays, and then etching
109:
To explain this in graphical form you may have a graph on Log exposure energy versus fraction of resist thickness remaining. The positive resist will be completely removed at the final exposure energy and the negative resist will be completely hardened and insoluble by the end of exposure energy. The
663:
resin). DNQ inhibits the dissolution of the novolac resin, but upon exposure to light, the dissolution rate increases even beyond that of pure novolac. The mechanism by which unexposed DNQ inhibits novolac dissolution is not well understood, but is believed to be related to hydrogen bonding (or more
502:
Photoresists can also be exposed by electron beams, producing the same results as exposure by light. The main difference is that while photons are absorbed, depositing all their energy at once, electrons deposit their energy gradually, and scatter within the photoresist during this process. As with
53:
The process begins by coating a substrate with a light-sensitive organic material. A patterned mask is then applied to the surface to block light, so that only unmasked regions of the material will be exposed to light. A solvent, called a developer, is then applied to the surface. In the case of a
486:(DUV) spectrum, the Ο-Ο* electronic transition in benzene or carbon double-bond chromophores appears at around 200 nm. Due to the appearance of more possible absorption transitions involving larger energy differences, the absorption tends to increase with shorter wavelength, or larger
463:. Then, this surface covered by SAM is irradiated through a mask, similar to other photoresist, which generates a photo-patterned sample in the irradiated areas. And finally developer is used to remove the designed part (could be used as both positive or negative photoresist).
570:
Surface tension is the tension that induced by a liquid tended to minimize its surface area, which is caused by the attraction of the particles in the surface layer. In order to better wet the surface of substrate, photoresists are required to possess relatively low surface
490:. Photons with energies exceeding the ionization potential of the photoresist (can be as low as 5 eV in condensed solutions) can also release electrons which are capable of additional exposure of the photoresist. From about 5 eV to about 20 eV, photoionization of outer "
584:
to increase the sensitivity to the exposure energy. This is done in order to combat the larger absorption at shorter wavelengths. Chemical amplification is also often used in electron-beam exposures to increase the sensitivity to the exposure dose. In the process,
622:, or a freed electron that may react with other constituents of the solution. It typically travels a distance on the order of many nanometers before being contained; such a large travel distance is consistent with the release of electrons through thick oxide in
545:
Sensitivity is the minimum energy that is required to generate a well-defined feature in the photoresist on the substrate, measured in mJ/cm. The sensitivity of a photoresist is important when using deep ultraviolet (DUV) or extreme-ultraviolet
1553:
Wang, Xue-Bin; Ferris, Kim; Wang, Lai-Sheng (2000). "Photodetachment of
Gaseous Multiply Charged Anions, Copper Phthalocyanine Tetrasulfonate Tetraanion: Tuning Molecular Electronic Energy Levels by Charging and Negative Electron Binding".
419:
monomer, which could generate free radical when exposed to light, then initiates the photopolymerization of monomer to produce a polymer. Photopolymeric photoresists are usually used for negative photoresist, e.g. methyl methacrylate and
477:
In lithography, decreasing the wavelength of light source is the most efficient way to achieve higher resolution. Photoresists are most commonly used at wavelengths in the ultraviolet spectrum or shorter (<400 nm). For example,
732:). Unlike other negative resists, HSQ is inorganic and metal-free. Therefore, exposed HSQ provides a low dielectric constant (low-k) Si-rich oxide. A comparative study against other photoresists was reported in 2015 (Dow Corning HSQ).
65:
A BARC coating (Bottom Anti-Reflectant
Coating) may be applied before the photoresist is applied, to avoid reflections from occurring under the photoresist and to improve the photoresist's performance at smaller semiconductor nodes.
700:
In 2016, OSTE Polymers were shown to possess a unique photolithography mechanism, based on diffusion-induced monomer depletion, which enables high photostructuring accuracy. The OSTE polymer material was originally invented at the
450:
photoresist is a type of photoresist that generates hydrophilic products under light. Photodecomposing photoresists are usually used for positive photoresist. A typical example is azide quinone, e.g. diazonaphthaquinone (DQ).
126:-butoxycarbonyl (t-BOC), inducing the resist from alkali-insoluble to alkali-soluble. This was the first chemically amplified resist used in the semiconductor industry, which was invented by Ito, Willson, and Frechet in 1982.
1408:
227:
is a type of photoresist in which the portion of the photoresist that is exposed to light becomes insoluble in the photoresist developer. The unexposed portion of the photoresist is dissolved by the photoresist developer.
709:. Whereas the material has properties similar to those of SU8, OSTE has the specific advantage that it contains reactive surface molecules, which make this material attractive for microfluidic or biomedical applications.
1076:
Ishii, Hiroyuki; Usui, Shinji; Douki, Katsuji; Kajita, Toru; Chawanya, Hitoshi; Shimokawa, Tsutomu (2000-01-01). Houlihan, Francis M (ed.). "Design and lithographic performances of 193-specific photoacid generators".
764:
was described by
Whitesides Group in 1993. Generally, in this techniques, an elastomeric stamp is used to generate two-dimensional patterns, through printing the βinkβ molecules onto the surface of a solid substrate.
1463:
Chochos, Ch.L.; Ismailova, E. (2009). "Hyperbranched
Polymers for Photolithographic Applications β Towards Understanding the Relationship between Chemical Structure of Polymer Resin and Lithographic Performances".
430:
photoresist is a type of photoresist, which could crosslink chain by chain when exposed to light, to generate an insoluble network. Photocrosslinking photoresist are usually used for negative photoresist.
142:
is a type of photoresist in which a portion is exposed to light and becomes soluble to the photoresist developer. The unexposed portion of the photoresist remains insoluble in the photoresist developer.
1675:
517:
Physical, chemical, and optical properties of photoresists influence their selection for different processes. The primary properties of the photoresist are resolution capability, process dose and focus
1407:"Positive and Negative Working Resist Compositions with Acid-Generating Photoinitiator and Polymer with Acid-Labile Groups Pendant From Polymer Backbone" J.M.J. FrΓ©chet, H. Ito and C.G. Willson 1985.
1214:
Braun, M; Gruber, F; Ruf, M. -W; Kumar, S. V. K; Illenberger, E; Hotop, H (2006). "IR photon enhanced dissociative electron attachment to SF6: Dependence on photon, vibrational, and electron energ".
998:
Huang, Jingyu; Dahlgren, David A.; Hemminger, John C. (1994-03-01). "Photopatterning of Self-Assembled
Alkanethiolate Monolayers on Gold: A Simple Monolayer Photoresist Utilizing Aqueous Chemistry".
552:
Viscosity is a measure of the internal friction of a fluid, affecting how easily it will flow. When it is needed to produce a thicker layer, a photoresist with higher viscosity will be preferred.
533:
Resolution is the ability to differ the neighboring features on the substrate. Critical dimension (CD) is a main measure of resolution. The smaller the CD is, the higher resolution would be.
626:
in response to ultraviolet light. This parasitic exposure would degrade the resolution of the photoresist; for 193 nm the optical resolution is the limiting factor anyway, but for
278:
MTF (modulation transfer function is the ratio of image intensity modulation and object intensity modulation and it is a parameter that indicates the capability of an optical system.
482:(DNQ) absorbs strongly from approximately 300 nm to 450 nm. The absorption bands can be assigned to n-Ο* (S0βS1) and Ο-Ο* (S1βS2) transitions in the DNQ molecule. In the
539:
Contrast is the difference from exposed portion to unexposed portion. The higher the contrast is, the more obvious the difference between exposed and unexposed portions would be.
1624:
Lukin, L; Balakin, Alexander A. (2001). "Thermalization of low energy electrons in liquid methylcyclohexane studied by the photoassisted ion pair separation technique".
564:
Anti-etching is the ability of a photoresist to resist the high temperature, different pH environment or the ion bombardment in the process of post-modification.
406:
Based on the chemical structure of photoresists, they can be classified into three types: photopolymeric, photodecomposing, and photocrosslinking photoresist.
1510:
S. Tagawa; et al. (2000). Houlihan, Francis M. (ed.). "Radiation and photochemistry of onium salt acid generators in chemically amplified resists".
1161:
Weingartner, Joseph C; Draine, B. T; Barr, David K (2006). "Photoelectric
Emission from Dust Grains Exposed to Extreme Ultraviolet and X-Ray Radiation".
558:
Adherence is the adhesive strength between photoresist and substrate. If the resist comes off the substrate, some features will be missing or damaged.
589:
released by the exposure radiation diffuse during the post-exposure bake step. These acids render surrounding polymer soluble in developer. A single
402:
Photolysis of a dizaonaphthoquinone that leads to a much more polar environment, which allows aqueous base to dissolve a
Bakelite-type polymer
1254:"Rapid, cost-efficient fabrication of microfluidic reactors in thermoplastic polymers by combining photolithography and hot embossing"
664:
exactly diazocoupling in the unexposed region). DNQ-novolac resists are developed by dissolution in a basic solution (usually 0.26N
1906:
912:
1382:
1320:
1033:
Bratton, Daniel; Yang, Da; Dai, Junyan; Ober, Christopher K. (2006-02-01). "Recent progress in high resolution lithography".
982:
725:
1825:
522:
s required for curing, and resistance to reactive ion etching. Other key properties are sensitivity, compatibility with
1901:
1866:
651:
One very common positive photoresist used with the I, G and H-lines from a mercury-vapor lamp is based on a mixture of
702:
1252:
Greener, Jesse; Li, Wei; Ren, Judy; Voicu, Dan; Pakharenko, Viktoriya; Tang, Tian; Kumacheva, Eugenia (2010-02-02).
122:
A positive photoresist example, whose solubility would change by the photogenerated acid. The acid deprotects the
806:
287:
1253:
936:
665:
523:
1422:
Van
Steenwinckel, David; Lammers, Jeroen H.; Koehler, Thomas; Brainard, Robert L.; Trefonas, Peter (2006).
1911:
1344:
1674:
Lawson, Richard; Tolbert, Laren; Younkin, Todd; Henderson, Cliff (2009). Henderson, Clifford L (ed.).
1589:
Lu, Hong; Long, Frederick H.; Eisenthal, K. B. (1990). "Femtosecond studies of electrons in liquids".
724:, but also useful for photolithography. Originally invented by Dow Corning (1970), and now produced (
721:
627:
600:
The following reactions are an example of commercial chemically amplified photoresists in use today:
772:(PDMS) master stamp. Step 2 for microcontact printing A scheme of the inking and contact process of
456:
676:
One very common negative photoresist is based on epoxy-based oligomer. The common product name is
1362:
717:
219:
A radical induced polymerization and crosslinking of an acrylate monomer as negative photoresist
785:
761:
1773:
1687:
1633:
1598:
1563:
1519:
1473:
1435:
1223:
1180:
1133:
1086:
792:
769:
421:
47:
729:
211:
A crosslinking of a polyisoprene rubber by a photoreactive biazide as negative photoresist
110:
slope of this graph is the contrast ratio. Intensity (I) is related to energy by E = I*t.
8:
652:
479:
76:(a binder that provides physical properties such as adhesion, chemical resistance, etc),
1777:
1691:
1637:
1602:
1567:
1523:
1477:
1439:
1227:
1184:
1137:
1090:
394:
Photopolymerization of methyl methacrylate monomers under UV that resulting into polymer
1802:
1761:
1703:
1535:
1489:
1338:
1289:
1196:
1170:
1102:
1058:
897:
845:
834:
1645:
1916:
1862:
1807:
1789:
1742:
1707:
1378:
1326:
1316:
1281:
1273:
1146:
1121:
1050:
1015:
978:
619:
512:
1762:"Beyond EUV lithography: a comparative study of efficient photoresists' performance"
1539:
1493:
1293:
1200:
1106:
1062:
816:
286:
The following table is based on generalizations which are generally accepted in the
207:
1797:
1781:
1734:
1722:
1695:
1641:
1606:
1571:
1527:
1481:
1443:
1370:
1265:
1235:
1231:
1188:
1141:
1094:
1042:
1007:
677:
594:
580:
Photoresists used in production for DUV and shorter wavelengths require the use of
483:
439:
263:
39:
398:
390:
57:
1374:
837:
is the most developed of the technologies and the most specialized in the field.
813:
tasks. Photoresist tends not to be etched by solutions with a pH greater than 3.
810:
634:
it is the electron range that determines the resolution rather than the optics.
215:
955:
590:
43:
1403:
805:
This includes specialty photonics materials, MicroElectro-Mechanical
Systems (
1895:
1793:
1746:
1330:
1277:
1054:
1019:
830:
773:
748:
487:
460:
20:
519:
118:
1811:
1610:
1485:
1310:
1285:
858:
740:
660:
491:
411:
130:
46:, to form a patterned coating on a surface. This process is crucial in the
35:
1175:
1738:
1011:
840:
1680:
Proc. SPIE 7273, Advances in Resist
Materials and Processing Technology
1785:
1699:
1575:
1531:
1448:
1423:
1421:
1098:
1269:
605:
1046:
1192:
863:
820:
A micro-electrical-mechanical cantilever inproduced by photoetching
623:
281:
1676:"Negative-tone molecular resists based on cationic polymerization"
898:"Top Anti-reflective Coatings vs Bottom Anti-reflective Coatings"
768:
Step 1 for microcontact printing. A scheme for the creation of a
656:
644:
106:
light will toughen the resist and create an etch resistant mask.
1682:. Advances in Resist Materials and Processing Technology XXVI.
1760:
Mojarad, Nassir; Gobrecht, Jens; Ekinci, Yasin (2015-03-18).
1673:
1122:"Multiphoton-induced chemistry of phenol in hexane at 266 nm"
960:
1982 Symposium on VLSI Technology. Digest of Technical Papers
937:"ARβ’ 10L Bottom Anti-Reflectant Coating (BARC) | DuPont"
695:
689:
416:
1456:
614:
e + photoacid generator β e + acid cation + sulfonate anion
844:
A 12-inch silicon wafer can carry hundreds or thousands of
631:
586:
526:(TMAH), adhesion, environmental stability, and shelf life.
472:
459:
SAM photoresist, first a SAM is formed on the substrate by
1859:
Cleaning Technology in Semiconductor Device Manufacturing
954:
Ito, H.; Willson, C. G.; Frechet, J. H. J. (1982-09-01).
681:
267:
1315:. James E. Mark (2 ed.). New York: Springer. 2006.
685:
434:
1826:"Self-assembled Monolayer Films: Microcontact Printing"
800:
706:
604:
photoacid generator + hΞ½ (193 nm) β acid cation +
997:
913:"Basics of Microstructuring: Anti-Reflective Coatings"
238:
free radical initiated photo cross-linking of polymers
1759:
1514:. Advances in Resist Technology and Processing XVII.
1369:, New York, NY: Springer New York, pp. 965β979,
1160:
1075:
235:
variety of sensitizers (only a few % by weight)
1417:
1415:
1213:
255:
swelling is an issue for high-resolution patterning
134:
An example of single-component positive photoresist
16:
Light-sensitive material used in making electronics
1032:
611:sulfonate anion + hΞ½ (193 nm) β e + sulfonate
1251:
1079:Advances in Resist Technology and Processing XVII
953:
1893:
1462:
1412:
712:
282:Differences between positive and negative resist
193:UV exposure destroys the inhibitory effect of DQ
100:light will weaken the resist, and create a hole
1721:Frye, Cecil L.; Collins, Ward T. (1970-09-01).
1588:
956:"New UV Resists with Negative or Positive Tone"
1885:. Springer Science & Business Media. 2004.
1552:
415:photoresist is a type of photoresist, usually
1505:
1503:
1361:Lin, Qinghuang (2007), Mark, James E. (ed.),
1623:
146:Some examples of positive photoresists are:
1720:
1591:Journal of the Optical Society of America B
809:), glass printed circuit boards, and other
442:(a single molecule contains 8 epoxy groups)
1500:
1428:Journal of Vacuum Science and Technology B
910:
696:Off-stoichiometry thiol-enes(OSTE) polymer
642:
152:(polymethylmethacrylate) single-component
1801:
1509:
1447:
1174:
1145:
881:
779:
575:
497:
92:
1841:
1727:Journal of the American Chemical Society
1723:"Oligomeric silsesquioxanes, (HSiO3/2)n"
1658:
1367:Physical Properties of Polymers Handbook
1119:
839:
815:
791:
756:
747:
739:
473:Absorption at UV and shorter wavelengths
433:
397:
389:
232:Based on cyclized polyisoprene (rubber)
214:
206:
129:
117:
80:(which has a photoactive compound), and
56:
1312:Physical properties of polymer handbook
1247:
1245:
266:(epoxy-based polymer), good adhesion),
202:
113:
1894:
671:
173:Diazoquinone ester (DQ) 20-50% weight
1856:
1356:
1354:
1305:
1303:
972:
789:to remove the copper-clad substrate.
728:) by Applied Quantum Materials Inc. (
187:Frequently used for near-UV exposures
1661:Photoresist: materials and processes
1363:"Properties of Photoresist Polymers"
1242:
829:This application, mainly applied to
801:Patterning and etching of substrates
680:, and it was originally invented by
159:Resin itself is DUV sensitive (slow)
1556:The Journal of Physical Chemistry A
1360:
824:
72:typically consist of 3 components:
38:used in several processes, such as
13:
1351:
1300:
1035:Polymers for Advanced Technologies
14:
1928:
1844:The Electronic Packaging Handbook
1424:"Resist effects at small pitches"
884:Modern physical organic chemistry
882:Eric, Anslyn; Dougherty, Dennis.
703:KTH Royal Institute of Technology
385:
252:long narrow lines can become wavy
198:Issues: Adhesion, Etch Resistance
156:Resist for deep-UV, e-beam, x-ray
84:(which keeps the resist liquid).
975:Fundamentals of Microfabrication
720:is a common negative resist for
467:
170:Common resists for mercury lamps
1875:
1861:. Electrochemical Society Inc.
1850:
1835:
1818:
1753:
1714:
1667:
1652:
1617:
1582:
1546:
1396:
1207:
1154:
1113:
752:rightInking and contact process
735:
61:Photoresist of Photolithography
1907:Lithography (microfabrication)
1236:10.1016/j.chemphys.2006.07.005
1069:
1026:
991:
966:
947:
929:
904:
890:
875:
288:microelectromechanical systems
179:hydrophobic, not water soluble
87:
1:
1646:10.1016/S0301-0104(01)00260-9
869:
713:Hydrogen silsesquioxane (HSQ)
666:tetramethylammonium hydroxide
524:tetramethylammonium hydroxide
506:
290:(MEMS) fabrication industry.
1659:DeForest, William S (1975).
1375:10.1007/978-0-387-69002-5_57
1147:10.1016/0009-2614(90)87271-r
796:A printed circuit board-4276
346:Exposed region is insoluble
340:Solubility in the developer
274:Modulation transfer function
249:swelling during development
7:
886:. University Science Books.
852:
246:potential oxygen inhibition
184:Phenolic Novolak Resin (N)
166:Two-component DQN resists:
10:
1933:
973:Madou, Marc (2002-03-13).
591:acid molecule can catalyze
510:
343:Exposed region is soluble
18:
1902:Light-sensitive chemicals
1842:Montrose, Mark I (1999).
1163:The Astrophysical Journal
1120:Belbruno, Joseph (1990).
628:electron beam lithography
70:Conventional photoresists
1663:. McGraw-Hill Companies.
1126:Chemical Physics Letters
744:Creating the PDMS master
637:
457:self-assembled monolayer
373:Wet chemical resistance
162:Chain scission mechanism
36:light-sensitive material
30:(also known simply as a
19:Not to be confused with
268:Kodak Photoresist (KPR)
1611:10.1364/JOSAB.7.001511
1486:10.1002/adma.200801715
1343:: CS1 maint: others (
849:
821:
797:
786:printed circuit boards
780:Printed circuit boards
753:
745:
582:chemical amplification
576:Chemical amplification
498:Electron-beam exposure
443:
438:Chemical structure of
403:
395:
220:
212:
135:
127:
93:Simple resist polarity
62:
1404:U.S. patent 4,491,628
918:. Microchemicals GmbH
843:
819:
795:
762:Microcontact printing
757:Microcontact printing
751:
743:
705:, but is now sold by
684:, but is now sold by
437:
401:
393:
218:
210:
133:
121:
60:
770:polydimethylsiloxane
422:poly(phthalaldehyde)
307:Adhesion to silicon
225:negative photoresist
203:Negative photoresist
140:positive photoresist
114:Positive photoresist
48:electronics industry
1857:Novak, R.E (2000).
1778:2015NatSR...5E9235M
1739:10.1021/ja00722a009
1692:2009SPIE.7273E..3EL
1638:2001CP....265...87L
1603:1990JOSAB...7.1511L
1568:2000JPCA..104...25W
1524:2000SPIE.3999..204T
1478:2009AdM....21.1121C
1440:2006JVSTB..24..316V
1228:2006CP....329..148B
1185:2006ApJ...645.1188W
1138:1990CPL...166..167B
1091:2000SPIE.3999.1120I
1012:10.1021/la00015a005
835:integrated circuits
784:The manufacture of
672:Epoxy-based resists
653:diazonaphthoquinone
618:The e represents a
480:diazonaphthoquinone
1766:Scientific Reports
1466:Advanced Materials
850:
846:integrated circuit
822:
798:
754:
746:
668:(TMAH) in water).
561:Etching resistance
444:
404:
396:
221:
213:
136:
128:
63:
1912:Materials science
1883:Silicon photonics
1786:10.1038/srep09235
1733:(19): 5586β5588.
1700:10.1117/12.814455
1576:10.1021/jp9930090
1532:10.1117/12.388304
1449:10.1116/1.2151912
1384:978-0-387-31235-4
1322:978-0-387-31235-4
1099:10.1117/12.388276
984:978-0-8493-0826-0
620:solvated electron
513:Exposure latitude
428:Photocrosslinking
383:
382:
1924:
1887:
1886:
1879:
1873:
1872:
1854:
1848:
1847:
1839:
1833:
1832:
1830:
1822:
1816:
1815:
1805:
1757:
1751:
1750:
1718:
1712:
1711:
1671:
1665:
1664:
1656:
1650:
1649:
1626:Chemical Physics
1621:
1615:
1614:
1586:
1580:
1579:
1550:
1544:
1543:
1507:
1498:
1497:
1460:
1454:
1453:
1451:
1419:
1410:
1406:
1400:
1394:
1393:
1392:
1391:
1358:
1349:
1348:
1342:
1334:
1307:
1298:
1297:
1270:10.1039/b918834g
1249:
1240:
1239:
1216:Chemical Physics
1211:
1205:
1204:
1178:
1176:astro-ph/0601296
1169:(2): 1188β1197.
1158:
1152:
1151:
1149:
1117:
1111:
1110:
1073:
1067:
1066:
1030:
1024:
1023:
995:
989:
988:
970:
964:
963:
951:
945:
944:
933:
927:
926:
924:
923:
917:
911:MicroChemicals.
908:
902:
901:
894:
888:
887:
879:
825:Microelectronics
678:SU-8 photoresist
484:deep ultraviolet
448:Photodecomposing
351:Minimum feature
293:
292:
40:photolithography
1932:
1931:
1927:
1926:
1925:
1923:
1922:
1921:
1892:
1891:
1890:
1881:
1880:
1876:
1869:
1855:
1851:
1840:
1836:
1828:
1824:
1823:
1819:
1758:
1754:
1719:
1715:
1672:
1668:
1657:
1653:
1622:
1618:
1587:
1583:
1551:
1547:
1508:
1501:
1472:(10β11): 1121.
1461:
1457:
1420:
1413:
1402:
1401:
1397:
1389:
1387:
1385:
1359:
1352:
1336:
1335:
1323:
1309:
1308:
1301:
1250:
1243:
1212:
1208:
1159:
1155:
1118:
1114:
1074:
1070:
1047:10.1002/pat.662
1031:
1027:
996:
992:
985:
971:
967:
952:
948:
935:
934:
930:
921:
919:
915:
909:
905:
896:
895:
891:
880:
876:
872:
855:
827:
811:micropatterning
803:
782:
759:
738:
715:
698:
674:
649:
640:
578:
567:Surface tension
515:
509:
500:
475:
470:
388:
329:Developer base
324:Less expensive
321:More expensive
296:Characteristic
284:
205:
116:
95:
90:
24:
17:
12:
11:
5:
1930:
1920:
1919:
1914:
1909:
1904:
1889:
1888:
1874:
1868:978-1566772594
1867:
1849:
1834:
1817:
1752:
1713:
1666:
1651:
1616:
1581:
1545:
1499:
1455:
1434:(1): 316β320.
1411:
1395:
1383:
1350:
1321:
1299:
1264:(4): 522β524.
1241:
1206:
1193:10.1086/504420
1153:
1132:(2): 167β172.
1112:
1068:
1025:
1006:(3): 626β628.
990:
983:
965:
946:
928:
903:
889:
873:
871:
868:
867:
866:
861:
854:
851:
831:silicon wafers
826:
823:
802:
799:
781:
778:
758:
755:
737:
734:
714:
711:
697:
694:
673:
670:
648:
641:
639:
636:
616:
615:
612:
609:
577:
574:
573:
572:
568:
565:
562:
559:
556:
553:
550:
547:
543:
540:
537:
534:
531:
508:
505:
499:
496:
474:
471:
469:
466:
465:
464:
432:
431:
425:
412:Photopolymeric
387:
386:Classification
384:
381:
380:
377:
374:
370:
369:
366:
363:
362:Step coverage
359:
358:
355:
352:
348:
347:
344:
341:
337:
336:
333:
330:
326:
325:
322:
319:
318:Relative cost
315:
314:
311:
308:
304:
303:
300:
297:
283:
280:
271:
270:
260:
259:
258:
257:
256:
253:
247:
241:
240:
239:
236:
204:
201:
200:
199:
196:
195:
194:
191:
188:
182:
181:
180:
177:
176:photosensitive
171:
164:
163:
160:
157:
115:
112:
94:
91:
89:
86:
44:photoengraving
15:
9:
6:
4:
3:
2:
1929:
1918:
1915:
1913:
1910:
1908:
1905:
1903:
1900:
1899:
1897:
1884:
1878:
1870:
1864:
1860:
1853:
1845:
1838:
1827:
1821:
1813:
1809:
1804:
1799:
1795:
1791:
1787:
1783:
1779:
1775:
1771:
1767:
1763:
1756:
1748:
1744:
1740:
1736:
1732:
1728:
1724:
1717:
1709:
1705:
1701:
1697:
1693:
1689:
1685:
1681:
1677:
1670:
1662:
1655:
1647:
1643:
1639:
1635:
1632:(1): 87β104.
1631:
1627:
1620:
1612:
1608:
1604:
1600:
1596:
1592:
1585:
1577:
1573:
1569:
1565:
1561:
1557:
1549:
1541:
1537:
1533:
1529:
1525:
1521:
1517:
1513:
1506:
1504:
1495:
1491:
1487:
1483:
1479:
1475:
1471:
1467:
1459:
1450:
1445:
1441:
1437:
1433:
1429:
1425:
1418:
1416:
1409:
1405:
1399:
1386:
1380:
1376:
1372:
1368:
1364:
1357:
1355:
1346:
1340:
1332:
1328:
1324:
1318:
1314:
1313:
1306:
1304:
1295:
1291:
1287:
1283:
1279:
1275:
1271:
1267:
1263:
1259:
1255:
1248:
1246:
1237:
1233:
1229:
1225:
1221:
1217:
1210:
1202:
1198:
1194:
1190:
1186:
1182:
1177:
1172:
1168:
1164:
1157:
1148:
1143:
1139:
1135:
1131:
1127:
1123:
1116:
1108:
1104:
1100:
1096:
1092:
1088:
1085:: 1120β1127.
1084:
1080:
1072:
1064:
1060:
1056:
1052:
1048:
1044:
1041:(2): 94β103.
1040:
1036:
1029:
1021:
1017:
1013:
1009:
1005:
1001:
994:
986:
980:
977:. CRC Press.
976:
969:
961:
957:
950:
942:
938:
932:
914:
907:
899:
893:
885:
878:
874:
865:
862:
860:
857:
856:
847:
842:
838:
836:
832:
818:
814:
812:
808:
794:
790:
787:
777:
776:lithography.
775:
774:microprinting
771:
766:
763:
750:
742:
733:
731:
727:
723:
719:
710:
708:
704:
693:
691:
687:
683:
679:
669:
667:
662:
658:
657:novolac resin
654:
646:
635:
633:
629:
625:
621:
613:
610:
607:
603:
602:
601:
598:
596:
592:
588:
583:
569:
566:
563:
560:
557:
554:
551:
548:
544:
541:
538:
535:
532:
529:
528:
527:
525:
521:
514:
504:
495:
493:
489:
488:photon energy
485:
481:
468:Light sources
462:
461:self-assembly
458:
454:
453:
452:
449:
441:
436:
429:
426:
423:
418:
414:
413:
409:
408:
407:
400:
392:
378:
375:
372:
371:
367:
364:
361:
360:
356:
353:
350:
349:
345:
342:
339:
338:
334:
331:
328:
327:
323:
320:
317:
316:
312:
309:
306:
305:
301:
298:
295:
294:
291:
289:
279:
276:
275:
269:
265:
261:
254:
251:
250:
248:
245:
244:
242:
237:
234:
233:
231:
230:
229:
226:
217:
209:
197:
192:
190:Water soluble
189:
186:
185:
183:
178:
175:
174:
172:
169:
168:
167:
161:
158:
155:
154:
153:
151:
147:
144:
141:
132:
125:
120:
111:
107:
105:
101:
99:
85:
83:
79:
75:
71:
67:
59:
55:
51:
49:
45:
41:
37:
33:
29:
22:
21:Photoresistor
1882:
1877:
1858:
1852:
1846:. CRC Press.
1843:
1837:
1820:
1769:
1765:
1755:
1730:
1726:
1716:
1683:
1679:
1669:
1660:
1654:
1629:
1625:
1619:
1594:
1590:
1584:
1562:(1): 25β33.
1559:
1555:
1548:
1515:
1511:
1469:
1465:
1458:
1431:
1427:
1398:
1388:, retrieved
1366:
1311:
1261:
1257:
1222:(1β3): 148.
1219:
1215:
1209:
1166:
1162:
1156:
1129:
1125:
1115:
1082:
1078:
1071:
1038:
1034:
1028:
1003:
999:
993:
974:
968:
959:
949:
940:
931:
920:. Retrieved
906:
892:
883:
877:
859:Photopolymer
833:and silicon
828:
804:
783:
767:
760:
736:Applications
716:
707:Mercene Labs
699:
675:
661:formaldehyde
650:
617:
599:
595:deprotection
581:
579:
516:
501:
492:valence band
476:
447:
445:
427:
410:
405:
354:0.5 ΞΌm
285:
277:
273:
272:
224:
222:
165:
149:
148:
145:
139:
137:
123:
108:
103:
102:
97:
96:
81:
77:
73:
69:
68:
64:
52:
31:
27:
25:
1772:(1): 9235.
1597:(8): 1511.
647:photoresist
593:many such '
542:Sensitivity
424:/PAG blends
88:Definitions
28:photoresist
1896:Categories
1686:: 72733E.
1512:Proc. SPIE
1390:2023-01-06
941:dupont.com
922:2020-01-31
870:References
690:Gersteltec
659:(a phenol
655:(DNQ) and
530:Resolution
511:See also:
507:Parameters
379:Excellent
357:7 nm
313:Excellent
78:sensitizer
1794:2045-2322
1747:0002-7863
1708:122244702
1339:cite book
1331:619279219
1278:1473-0189
1055:1099-1581
1020:0743-7463
686:Microchem
606:sulfonate
555:Adherence
549:Viscosity
302:Negative
299:Positive
262:Example:
104:Negative:
98:Positive:
1917:Polymers
1812:25783209
1540:95525894
1494:95710610
1294:24567881
1286:20126695
1258:Lab Chip
1201:13859981
1107:98281255
1063:55877239
1000:Langmuir
962:: 86β87.
864:Hardmask
853:See also
624:UV EPROM
571:tension.
536:Contrast
520:latitude
335:Organic
332:Aqueous
243:Issues:
1803:4363827
1774:Bibcode
1688:Bibcode
1634:Bibcode
1599:Bibcode
1564:Bibcode
1520:Bibcode
1518:: 204.
1474:Bibcode
1436:Bibcode
1224:Bibcode
1181:Bibcode
1134:Bibcode
1087:Bibcode
645:Novolac
365:Better
82:solvent
34:) is a
1865:
1810:
1800:
1792:
1745:
1706:
1538:
1492:
1381:
1329:
1319:
1292:
1284:
1276:
1199:
1105:
1061:
1053:
1018:
981:
722:e-beam
608:anion
546:(EUV).
368:Lower
32:resist
1829:(PDF)
1704:S2CID
1536:S2CID
1490:S2CID
1290:S2CID
1197:S2CID
1171:arXiv
1103:S2CID
1059:S2CID
916:(PDF)
638:Types
587:acids
417:allyl
376:Fair
310:Fair
74:resin
1863:ISBN
1808:PMID
1790:ISSN
1743:ISSN
1684:XXVI
1516:3999
1379:ISBN
1345:link
1327:OCLC
1317:ISBN
1282:PMID
1274:ISSN
1083:3999
1051:ISSN
1016:ISSN
979:ISBN
848:dice
807:MEMS
726:2017
688:and
643:DNQ-
632:EUVL
455:For
440:SU-8
264:SU-8
150:PMMA
124:tert
42:and
1798:PMC
1782:doi
1735:doi
1696:doi
1642:doi
1630:265
1607:doi
1572:doi
1560:104
1528:doi
1482:doi
1444:doi
1371:doi
1266:doi
1232:doi
1220:329
1189:doi
1167:645
1142:doi
1130:166
1095:doi
1043:doi
1008:doi
730:AQM
718:HSQ
682:IBM
630:or
1898::
1806:.
1796:.
1788:.
1780:.
1768:.
1764:.
1741:.
1731:92
1729:.
1725:.
1702:.
1694:.
1678:.
1640:.
1628:.
1605:.
1593:.
1570:.
1558:.
1534:.
1526:.
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1488:.
1480:.
1470:21
1468:.
1442:.
1432:24
1430:.
1426:.
1414:^
1377:,
1365:,
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1337:{{
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1280:.
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1218:.
1195:.
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1179:.
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1128:.
1124:.
1101:.
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1039:17
1037:.
1014:.
1004:10
1002:.
958:.
939:.
446:*
223:A
138:A
50:.
26:A
1871:.
1831:.
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1784::
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1770:5
1749:.
1737::
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1690::
1648:.
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1530::
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1191::
1183::
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1144::
1136::
1109:.
1097::
1089::
1065:.
1045::
1022:.
1010::
987:.
943:.
925:.
900:.
23:.
Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.
