298:(ITRS) relates nanoionics-based resistive switching memories to the category of "emerging research devices" ("ionic memory"). The area of close intersection of nanoelectronics and nanoionics had been called nanoelionics (1996). Now, the vision of future nanoelectronics constrained solely by fundamental ultimate limits is being formed in advanced research. The ultimate physical limits to computation are very far beyond the currently attained (10 cm, 10 Hz) region. What kind of logic switches might be used at the near nm- and sub-nm peta-scale integration? The question was the subject matter already in, where the term "nanoelectronics" was not used yet. Quantum mechanics constrains electronic distinguishable configurations by the tunneling effect at tera-scale. To overcome 10 cm bit density limit, atomic and ion configurations with a characteristic dimension of L <2 nm should be used in the information domain and materials with an effective mass of information carriers m* considerably larger than electronic ones are required: m* =13 m
259:–family). Nanoionics-I and nanoionics-II differ from each other in the design of interfaces. The role of boundaries in nanoionics-I is the creation of conditions for high concentrations of charged defects (vacancies and interstitials) in a disordered space-charge layer. But in nanoionics-II, it is necessary to conserve the original highly ionic conductive crystal structures of advanced superionic conductors at ordered (lattice-matched) heteroboundaries. Nanoionic-I can significantly enhance (up to ~10 times) the 2D-like ion conductivity in nanostructured materials with structural coherence, but it is remaining ~10 times smaller relatively to 3D ionic conductivity of advanced superionic conductors.
291:, nanoionics is unambiguously defined by its own objects (nanostructures with FIT), subject matter (properties, phenomena, effects, mechanisms of processes, and applications connected with FIT at nano-scale), method (interface design in nanosystems of superionic conductors), and the criterion (R/L ~1, where R is the length scale of device structures, and L is the characteristic length on which the properties, characteristics, and other parameters connected with FIT change drastically).
153:
401:. In 2012, a 1D structure-dynamic approach was developed in nanoionics for a detailed description of the space charge formation and relaxation processes in irregular potential relief (direct problem) and interpretation of characteristics of nanosystems with fast-ion transport (inverse problem), as an example, for the description of a collective phenomenon: coupled ion transport and dielectric-polarization processes which lead to
266:
and electrochemical potential.This means that accepted is the picture of a hopping ion transport in the potential landscape where all barriers are of the same height (uniform potential relief). Despite the obvious difference of objects of solid state ionics and nanoionics-I, -II, the true new problem
233:, charge and information. The term and conception of nanoionics (as a new branch of science) were first introduced by A.L. Despotuli and V.I. Nikolaichik (Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka) in January 1992.
240:, dealing with ionic transport phenomena in solids, considers Nanoionics as its new division. Nanoionics tries to describe, for example, diffusion&reactions, in terms that make sense only at a nanoscale, e.g., in terms of non-uniform (at a nanoscale) potential landscape.
275:) has a special common basis: non-uniform potential landscape on nanoscale (for example) which determines the character of the mobile ion subsystem response to an impulse or harmonic external influence, e.g. a weak influence in
571:
Garcia-Barriocanal, J.; Rivera-Calzada, A.; Varela, M.; Sefrioui, Z.; Iborra, E.; Leon, C.; Pennycook, S. J.; Santamaria, J. (2008). "Colossal ionic conductivity at interfaces of epitaxial ZrO
377:. A significant role of boundary conditions with respect to ionic conductivity was first experimentally discovered by C.C. Liang who found an anomalously high conduction in the LiI-Al
692:
Bindi, L.; Evain M. (2006). "Fast ion conduction character and ionic phase-transitions in disordered crystals: the complex case of the minerals of the pearceite– polybasite group".
1113:
385:
two-phase system. Because a space-charge layer with specific properties has nanometer thickness, the effect is directly related to nanoionics (nanoionics-I). The
330:), lithium batteries and fuel cells with nanostructured electrodes, nano-switches with quantized conductivity on the basis of fast-ion conductors (see also
373:
An important case of fast-ionic conduction in solid states is in the surface space-charge layer of ionic crystals. Such conduction was first predicted by
295:
507:
310:(L =0,2 nm). Future short-sized devices may be nanoionic, i.e. based on the fast-ion transport at the nanoscale, as it was first stated in.
1372:
Despotuli, Alexandr; Andreeva, Alexandra (2013). "Structure-dynamic approach in nanoionics. Modeling of ion transport on blocking electrode".
1018:
Chiabrera, A.; Di Zitti, E.; Costa, F.; Bisio, G.M. (1989). "Physical limits of integration and information processing in molecular systems".
247:
and two fundamentally different nanoionics: (I) nanosystems based on solids with low ionic conductivity, and (II) nanosystems based on
735:
Despotuli, A.; Andreeva A. (2015). "Maxwell displacement current and nature of
Jonsher's "universal" dynamic response in nanoionics".
181:
1395:
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649:
107:
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Banno, N.; Sakamoto, T.; Iguchi, N.; Kawaura, H.; Kaeriyama, S.; Mizuno, M.; Terabe, K.; Hasegawa, T.; Aono, M. (2006).
197:
is the study and application of phenomena, properties, effects, methods and mechanisms of processes connected with fast
1393:
Despotuli, A.; Andreeva A.V. (2016). "Method of uniform effective field in structure-dynamic approach of nanoionics".
517:
339:
102:
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Zhirnov, V.V.; Cavin R.K. (2007). "Emerging research nanoelectronic devices: the choice of information carrier".
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The classical theory of diffusion and migration in solids is based on the notion of a diffusion coefficient,
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Cavin, R.K.; Zhirnov V.V. (2006). "Generic device abstractions for information processing technologies".
39:
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Despotuli, A.L.; Andreeva, A.V.; Rambabu, B. (2005). "Nanoionics of advanced superionic conductors".
1435:
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1261:"Перспективы развития в России глубоко субвольтовой наноэлектроники и связанных с ней технологий"
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Maier, J. (2005). "Nanoionics: ion transport and electrochemical storage in confined systems".
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8:
1276:"Space-charge layer and distribution of lattice defects at the surface of ionic crystals"
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Despotuli A.L.; Andreeva A.V. (2007). "High-value capacitors for 0.5-V nanoelectronics".
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1319:"Conduction Characteristics of the Lithium Iodide-Aluminum Oxide Solid Electrolytes"
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Cerofolini, G.F. (2007). "Realistic limits to computation. I. Physical limits".
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systems. The topics of interest include fundamental properties of oxide
666:
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Despotuli, A.L.; Nikolaichic V.I. (1993). "A step towards nanoionics".
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has become the basis for the creation of a multitude of nanostructured
331:
87:
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1302:
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Cerofolini, G.F.; Romano E. (2008). "Molecular electronic in silico".
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355:
1215:; Aono, M. (2007). "Nanoionics-based resistive switching memories".
152:
72:
1378:
749:
644:(First ed.). Springer-Verlag Berlin Heidelberg. p. 651.
535:
509:
Introduction to Solid State Ionics: Phenomenology and
Applications
671:(2nd ed.). Blackwell Scientific Publications. p. 1622.
206:
230:
957:
Lloyd, S. (2000). "Ultimate physical limits to computation".
342:
and could find wide applications, for example in autonomous
1079:
1060:
347:
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with fast-ion transport at the functional heterojunctions (
668:
IUPAC. Compendium of
Chemical Terminology (the Gold Book)
437:
252:
198:
236:
A multidisciplinary scientific and industrial field of
1392:
1061:
Bate, R. T.; Reed M. A.; Frensley W. R (August 1987).
734:
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296:
International
Technology Roadmap for Semiconductors
338:). These are well compatible with sub-voltage and
1371:
903:
779:
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1359:"Структурно-динaмический подход в наноионике"
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471:Science and Technology of Advanced Materials
433:
431:
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467:"Nanoionics - Present and future prospects"
243:There are two classes of solid-state ionic
1063:"Nanoelectronics (in Final technical rept"
814:
512:(First ed.). CRC Press. p. 529.
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271:(or transformation) for these objects (
229:devices) for conversion and storage of
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1123:
956:
631:
1179:"Solid-Electrolyte Nanometer Switch"
108:List of semiconductor scale examples
201:transport (FIT) in all-solid-state
13:
1095:"2007 №7 Содержание журнала "СТА""
393:which are used in modern portable
287:Being a branch of nanoscience and
282:
14:
1447:
1183:IEICE Transactions on Electronics
405:'s "universal" dynamic response.
267:of fast-ion transport and charge/
340:deep-sub-voltage nanoelectronics
221:. Potential applications are in
209:at nanometer length scales, and
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103:Semiconductor device fabrication
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415:Programmable metallization cell
336:programmable metallization cell
19:Part of a series of articles on
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306:(L =0,5 nm) and m* =336 m
249:advanced superionic conductors
1:
1185:. E89-C(11) (11): 1492–1498.
420:
215:advanced superionic conductor
1199:10.1093/ietele/e89-c.11.1492
1067:Texas Instruments Inc Dallas
452:10.1016/0167-2738(93)90005-N
7:
1281:Journal of Chemical Physics
1040:10.1088/0022-3727/22/11/001
408:
313:
59:Solid-state nanoelectronics
40:Molecular scale electronics
31:Single-molecule electronics
10:
1452:
492:10.1016/j.stam.2007.10.002
477:(6): 503 (free download).
279:(impedance spectroscopy).
1409:10.1007/s11581-016-1668-3
880:10.1007/s00339-008-4415-4
837:10.1007/s00339-006-3670-5
802:10.1016/j.sse.2006.03.027
759:10.1007/s11581-014-1183-3
714:10.1007/s00269-006-0117-7
328:nanoionic supercapacitors
302:at L =1 nm, m* =53 m
782:Solid-State Electronics
609:10.1126/science.1156393
277:Dielectric spectroscopy
227:electrical double layer
217:)/electronic conductor
1020:J. Phys. D: Appl. Phys
506:C S Sunandana (2015).
465:Yamaguchi, S. (2007).
257:rubidium silver iodide
158:Electronics portal
1317:Liang, C. C. (1973).
665:A D McNaught (1997).
1274:Lehovec, K. (1953).
1111:English translation:
366:, or reconfigurable
322:are all-solid-state
45:Molecular logic gate
1335:1973JElS..120.1289L
1323:J. Electrochem. Soc
1294:1953JChPh..21.1123L
1231:2007NatMa...6..833W
1191:2006IEITE..89.1492B
1140:2005NatMa...4..805M
1032:1989JPhD...22.1571C
981:2000Natur.406.1047L
965:(6799): 1047–1054.
918:2007ECSTr..11f..17Z
872:2008ApPhA..91..181C
829:2007ApPhA..86...23C
794:2006SSEle..50..520C
706:2006PCM....33..677B
641:Diffusion in solids
601:2008Sci...321..676G
587:heterostructures".
483:2007STAdM...8..503Y
391:fast-ion conductors
362:, other micro- and
344:micro power sources
273:fast-ion conductors
1082:Modern Electronics
550:10.1007/BF02430394
440:Solid State Ionics
238:solid state ionics
211:fast-ion conductor
117:Related approaches
1344:10.1149/1.2403248
1329:(10): 1289–1292.
1303:10.1063/1.1699148
1026:(11): 1571–1579.
936:10.1149/1.2778363
678:978-0-9678550-9-7
651:978-3-540-71488-0
638:H Mehrer (2007).
595:(5889): 676–680.
395:lithium batteries
320:nanoionic devices
264:activation energy
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1103:. Retrieved
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251:(e.g. alpha–
242:
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368:memory cell
364:nanosystems
245:nanosystems
93:Moore's law
1105:2007-10-13
421:References
399:fuel cells
332:memristors
195:Nanoionics
126:Nanoionics
88:Nanosensor
1417:100727969
1379:1311.3480
1213:Waser, R.
1048:250835760
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