191:
166:
near-equilibrium growth techniques, such as LPE, to those outside of the miscibility gap. However, compositions of GaAsSb within the miscibility gap can be obtained with non-equilibrium growth techniques, such as MBE and MOVPE. By carefully selecting the growth conditions (e.g., the ratios of precursor gases in MOVPE) and maintaining relatively low temperatures during and after growth, it is possible to obtain compositions of GaAsSb within the miscibility gap that are
165:
at temperatures below 751 °C. This means that intermediate compositions of the alloy below this temperature are thermodynamically unstable and can spontaneously separate into two phases: one GaAs-rich and one GaSb-rich. This limits the compositions of GaAsSb that can be obtained by
510:
Sun, X., Wang, S., Hsu, J. S., Sidhu, R., Zheng, X. G., Li, X., Campbell, J. C., Holmes, A. L. (2002). "GaAsSb: a novel material for near infrared photodetectors on GaAs substrates".
178:, which, while normally within the miscibility gap at typical growth temperatures, can exist as a kinetically stable alloy. This composition of GaAsSb is latticed matched to
218:, like in GaAs and GaSb. Furthermore, the bandgap displays a minimum in composition at approximately x = 0.8 at T = 300 K, reaching a minimum value of E
399:
Bolognesi, C. R., Dvorak, M. M. W., Yeo, P., Xu, X. G., Watkins, S. P. (2001). "InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs".
2027:
1978:
45:
469:
Detz, H., Silvano De Sousa, J., Leonhardt, H., Klang, P., Zederbauer, T., Andrews, A. M., Schrenk, W., Smoliner, J., Strasser, G. (2014).
607:
113:
indicates the fractions of arsenic and antimony in the alloy. GaAsSb refers generally to any composition of the alloy. It is an alloy of
2286:
2405:
2172:
364:
Vurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001). "Band parameters for III–V compound semiconductors and their alloys".
348:
1962:
1008:
231:
2020:
134:
60:
1957:
600:
1918:
284:
Cherng, M. J., Stringfellow, G. G., Cohen, R. M. (1984). "Organometallic vapor phase epitaxial growth of GaAs
243:
333:
Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other
Properties
2013:
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1938:
1933:
1923:
1908:
593:
714:
1913:
257:
328:
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2102:
630:
2107:
2097:
1001:
929:
922:
190:
2368:
2360:
1734:
905:
795:
335:. Landolt-Börnstein - Group III Condensed Matter. Vol. b. Springer-Verlag. pp. 1–13.
153:
substrates. It is often incorporated into layered heterostructures with other III-V compounds.
130:
2388:
2241:
2136:
2069:
1715:
1369:
1352:
881:
774:
698:
667:
662:
260:
to reduce the tunneling distance and increase the tunneling current between adjacent cells.
2461:
2257:
2164:
2156:
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2052:
1830:
1394:
869:
823:
803:
758:
693:
519:
482:
443:
408:
373:
301:
138:
202:
and lattice constant of GaAsSb alloys are between those of pure GaAs (a = 0.565 nm, E
8:
2425:
2413:
2229:
2128:
1948:
1758:
1487:
782:
766:
688:
523:
486:
447:
412:
377:
305:
2466:
2376:
2337:
2269:
2204:
2079:
2074:
2057:
2036:
1842:
1824:
1440:
1261:
1195:
994:
857:
852:
672:
146:
118:
41:
2217:
2092:
1480:
1311:
1217:
847:
839:
616:
535:
344:
2306:
2294:
2212:
1899:
1767:
1537:
1430:
1409:
1328:
1304:
1234:
1202:
1137:
1091:
1045:
949:
733:
653:
527:
490:
451:
416:
381:
336:
309:
150:
142:
114:
37:
468:
2112:
1445:
1423:
1273:
1159:
961:
893:
811:
790:
554:
162:
580:
398:
1125:
434:
Ikossi-Anastasiou, K. (1993). "GaAsSb for heterojunction bipolar transistors".
215:
54:
531:
170:. For example, this makes it possible to grow GaAsSb with the composition GaAs
2455:
1290:
539:
167:
283:
1994:
1142:
1025:
207:
363:
340:
2044:
250:
495:
470:
455:
420:
385:
2005:
746:
249:
A GaAsSb/GaAs-based heterostructure was used to make a near-infrared
585:
313:
53:
Except where otherwise noted, data are given for materials in their
1017:
182:
and is sometimes used in heterostructures grown on that substrate.
97:
509:
2196:
1317:
738:
326:
199:
87:
84:
1036:
235:
106:
2285:
986:
921:
2404:
239:
179:
552:
512:
IEEE Journal of
Selected Topics in Quantum Electronics
222:= 0.67 eV, which is slightly below that of pure GaSb.
433:
556:
Semiconductor tunnel junction with enhancement layer
471:"InGaAs/GaAsSb based two-dimensional electron gases"
327:
Madelung, O., Rössler, U., Schulz, M., eds. (2002).
214:= 0.73 eV). Over all compositions, the band gap is
2453:
253:with peak responsivity centered at 1.3 μm.
230:GaAsSb has been extensively studied for use in
2021:
1002:
601:
194:Direct bandgap versus composition for GaAsSb.
475:Journal of Vacuum Science & Technology B
256:GaAsSb can be incorporated into III-V–based
46:Gallium indium arsenide antimonide phosphide
2028:
2014:
1009:
995:
608:
594:
156:
494:
234:. It has also been lattice-matched with
279:
277:
275:
273:
189:
185:
2454:
2035:
2009:
990:
615:
589:
436:IEEE Transactions on Electron Devices
401:IEEE Transactions on Electron Devices
329:"GaAs(1-x)Sb(x), physical properties"
270:
553:Klem, J. F., Zolper, J. C. (1997),
13:
357:
232:heterojunction bipolar transistors
14:
2488:
574:
210:) and GaSb (a = 0.610 nm, E
135:metalorganic vapor phase epitaxy
129:GaAsSb films have been grown by
225:
57:(at 25 °C , 100 kPa).
546:
503:
462:
427:
392:
320:
124:
1:
2287:Organoantimony(III) compounds
1016:
263:
1035:
923:Organogallium(III) compounds
244:two-dimensional electron gas
17:Gallium arsenide antimonide
7:
2406:Organoantimony(V) compounds
77:gallium antimonide arsenide
73:Gallium arsenide antimonide
10:
2493:
366:Journal of Applied Physics
258:multi-junction solar cells
2353:
2330:
2121:
2043:
1987:
1971:
1947:
1898:
1686:
1024:
726:
707:
681:
646:
623:
532:10.1109/JSTQE.2002.800848
51:
26:
21:
294:Applied Physics Letters
157:Thermodynamic Stability
242:to create and study a
195:
131:molecular beam epitaxy
193:
186:Electronic Properties
581:Properties of GaAsSb
139:liquid phase epitaxy
524:2002IJSTQ...8..817S
487:2014JVSTB..32bC104D
448:1993ITED...40..878I
413:2001ITED...48.2631B
378:2001JAP....89.5815V
341:10.1007/10832182_25
306:1984ApPhL..44..677C
107:III-V semiconductor
18:
2037:Antimony compounds
196:
168:kinetically stable
147:gallium antimonide
119:gallium antimonide
61:Infobox references
42:Gallium antimonide
27:Related compounds
16:
2472:Gallium compounds
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2003:
2002:
1972:Quinary arsenides
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1224:
1214:
1209:
1170:
1154:
1149:
1134:
1100:
1086:
984:
983:
980:
979:
617:Gallium compounds
496:10.1116/1.4863299
456:10.1109/16.210193
421:10.1109/16.960389
407:(11): 2631–2639.
386:10.1063/1.1368156
372:(11): 5815–5875.
350:978-3-540-42876-3
69:Chemical compound
67:
66:
33:Related compounds
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1323:
1316:
1307:
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1229:
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1212:
1207:
1198:
1168:
1152:
1147:
1132:
1128:
1098:
1094:
1084:
1042:
1033:
1032:
1011:
1004:
997:
988:
987:
919:
918:
610:
603:
596:
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568:
566:
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563:
550:
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543:
507:
501:
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498:
466:
460:
459:
431:
425:
424:
396:
390:
389:
361:
355:
354:
324:
318:
317:
281:
151:indium phosphide
143:gallium arsenide
115:gallium arsenide
105:), is a ternary
75:, also known as
38:Gallium arsenide
19:
15:
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188:
177:
173:
163:miscibility gap
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127:
104:
96:
70:
63:
58:
34:
12:
11:
5:
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2219:
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2202:
2198:
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2190:
2186:
2182:
2178:
2174:
2170:
2166:
2162:
2158:
2154:
2150:
2146:
2142:
2138:
2134:
2130:
2125:
2123:
2119:
2118:
2116:
2115:
2110:
2105:
2100:
2095:
2090:
2086:
2082:
2077:
2072:
2067:
2063:
2059:
2055:
2049:
2047:
2041:
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2032:
2025:
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575:External links
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2073:
2071:
2068:
2066:
2056:
2054:
2051:
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2042:
2038:
2031:
2026:
2024:
2019:
2017:
2012:
2011:
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1996:
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1986:
1980:
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1964:
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1946:
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1927:
1925:
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1907:
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1901:
1897:
1889:
1884:
1879:
1874:
1869:
1864:
1859:
1854:
1849:
1846:
1840:
1837:
1828:
1822:
1817:
1812:
1807:
1802:
1797:
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1779:
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1496:
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1408:
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1393:
1388:
1383:
1378:
1376:
1368:
1363:
1358:
1356:
1351:
1349:
1344:
1339:
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1332:
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1327:
1322:
1319:
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1310:
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1301:
1289:
1284:
1279:
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1267:
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1260:
1255:
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1240:
1238:
1236:
1233:
1228:
1227:
1221:
1219:
1216:
1211:
1206:
1204:
1201:
1199:
1194:
1192:
1190:
1188:
1186:
1184:
1182:
1180:
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1174:
1172:
1167:
1165:
1158:
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1151:
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1139:
1136:
1131:
1129:
1124:
1122:
1120:
1118:
1116:
1114:
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1110:
1108:
1106:
1104:
1102:
1097:
1095:
1090:
1089:
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1079:
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1075:
1073:
1071:
1069:
1067:
1065:
1063:
1061:
1059:
1057:
1055:
1053:
1051:
1049:
1047:
1043:
1034:
1030:
1027:
1023:
1019:
1012:
1007:
1005:
1000:
998:
993:
992:
989:
974:
960:
958:
948:
946:
928:
926:
924:
920:
914:
904:
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892:
890:
880:
878:
868:
866:
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854:
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849:
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844:
838:
836:
822:
820:
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792:
789:
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781:
779:
773:
771:
765:
763:
757:
755:
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743:
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731:
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719:
713:
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686:
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680:
674:
671:
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651:
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629:
628:
626:
622:
618:
611:
606:
604:
599:
597:
592:
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588:
582:
579:
578:
558:
557:
549:
541:
537:
533:
529:
525:
521:
517:
513:
506:
497:
492:
488:
484:
481:(2): 02C104.
480:
476:
472:
465:
457:
453:
449:
445:
441:
437:
430:
422:
418:
414:
410:
406:
402:
395:
387:
383:
379:
375:
371:
367:
360:
352:
346:
342:
338:
334:
330:
323:
315:
311:
307:
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295:
280:
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274:
269:
261:
259:
254:
252:
247:
245:
241:
237:
233:
223:
217:
209:
201:
192:
183:
181:
169:
164:
161:GaAsSb has a
154:
152:
148:
144:
140:
136:
132:
122:
120:
116:
112:
108:
103:
99:
94:
89:
86:
82:
78:
74:
62:
56:
50:
47:
43:
39:
36:
31:
30:
25:
20:
1995:Oxyarsenides
1928:
727:Gallium(III)
560:, retrieved
555:
548:
515:
511:
505:
478:
474:
464:
439:
435:
429:
404:
400:
394:
369:
365:
359:
332:
322:
297:
293:
255:
248:
229:
226:Applications
197:
160:
137:(MOVPE) and
128:
110:
101:
92:
80:
76:
72:
71:
22:Identifiers
2462:Antimonides
2045:Antimonides
682:Gallium(II)
624:Gallium(-V)
562:27 December
125:Preparation
117:(GaAs) and
2456:Categories
1958:Zn-Cd-P-As
1949:Quaternary
647:Gallium(I)
264:References
251:photodiode
109:compound;
2467:Arsenides
2331:Sb(III,V)
1979:GaInAsSbP
1951:arsenides
1934:(Ga,Mn)As
1902:arsenides
1028:arsenides
1018:Arsenides
540:1558-4542
141:(LPE) on
1988:See also
1660:↓
121:(GaSb).
2122:Sb(III)
1963:InAsSbP
1900:Ternary
520:Bibcode
483:Bibcode
444:Bibcode
409:Bibcode
374:Bibcode
302:Bibcode
206:= 1.42
200:bandgap
133:(MBE),
1939:InAsSb
1929:GaAsSb
1919:AlAsSb
1914:AlInAs
1909:AlGaAs
1026:Binary
804:Ga(CN)
796:Ga(OH)
538:
347:
236:InGaAs
216:direct
81:GaAsSb
2414:Sb(CH
2354:Sb(V)
2295:Sb(CH
1924:GaAsP
950:Ga(CH
894:Ga(CH
812:Ga(NO
2426:Sb(C
2361:SbCl
2307:Sb(C
2181:(OH)
2157:SbCl
2137:Sb(C
2129:SbBr
2113:ZnSb
2103:SmSb
2098:PrSb
2093:InSb
2085:HoSb
2080:HoSb
2075:GaSb
2070:DySb
2053:AlSb
1844:PuAs
1832:NpAs
1826:NpAs
1769:HoAs
1760:DyAs
1736:SmAs
1717:PrAs
1539:BiAs
1482:TaAs
1425:InAs
1396:PdAs
1371:MoAs
1306:GaAs
1275:CoAs
1263:MnAs
1235:CaAs
1197:AlAs
1093:LiAs
962:Ga(C
930:Ga(C
898:COO)
853:GaSb
840:GaPO
767:GaCl
759:GaBr
734:GaAs
715:GaCl
699:GaTe
694:GaSe
668:GaBr
663:GaCl
564:2023
536:ISSN
345:ISBN
198:The
176:0.49
172:0.51
149:and
2369:SbF
2246:(SO
2213:SbN
2205:SbI
2197:SbH
2185:(NO
2165:SbF
2108:YSb
2060:1-x
1571:**
1489:WAs
1441:+Te
1431:-Sn
1354:YAs
1329:+Br
1312:-Ge
1218:+Cl
1203:-Si
1127:BAs
1038:AsH
848:GaP
828:(SO
791:GaN
783:GaI
775:GaF
739:GaH
689:GaS
673:GaI
528:doi
491:doi
452:doi
417:doi
382:doi
337:doi
310:doi
292:".
290:0.5
286:0.5
240:InP
238:on
180:InP
91:(1-
79:or
2458::
2389:Sb
2377:Sb
2338:Sb
2274:Te
2270:Sb
2262:Se
2258:Sb
2242:Sb
2230:Sb
2218:Sb
2173:Sb
2062:Sb
2058:Bi
1886:No
1881:Md
1876:Fm
1871:Es
1866:Cf
1861:Bk
1856:Cm
1851:Am
1814:Pa
1809:Th
1804:Ac
1799:**
1786:Yb
1781:Tm
1776:Er
1753:Tb
1748:Gd
1743:Eu
1729:Pm
1724:Nd
1710:Ce
1705:La
1650:Og
1645:Ts
1640:Lv
1635:Mc
1630:Fl
1625:Nh
1620:Cn
1615:Rg
1610:Ds
1605:Mt
1600:Hs
1595:Bh
1590:Sg
1585:Db
1580:Rf
1575:Lr
1567:Ra
1562:Fr
1555:Rn
1550:At
1545:Po
1533:Pb
1528:Tl
1523:Hg
1518:Au
1513:Pt
1508:Ir
1503:Os
1498:Re
1476:Hf
1471:Lu
1467:*
1463:Ba
1458:Cs
1451:Xe
1446:+I
1436:Sb
1415:As
1411:Cd
1405:Ag
1390:Rh
1385:Ru
1380:Tc
1365:Nb
1360:Zr
1346:Sr
1341:Rb
1334:Kr
1324:Se
1318:As
1296:As
1292:Zn
1286:Cu
1281:Ni
1269:Fe
1257:Cr
1247:Ti
1242:Sc
1223:Ar
1169:Mg
1164:As
1160:Na
1153:Ne
1143:+O
1138:+N
1099:Be
1085:He
1046:+H
910:Te
906:Ga
886:Se
882:Ga
870:Ga
858:Ga
824:Ga
747:Ga
654:Ga
635:Ga
631:Mg
534:.
526:.
514:.
489:.
479:32
477:.
473:.
450:.
440:40
438:.
415:.
405:48
403:.
380:.
370:89
368:.
343:.
331:.
308:.
298:44
296:.
288:Sb
272:^
246:.
208:eV
174:Sb
145:,
98:Sb
88:As
85:Ga
44:;
40:;
2436:5
2434:)
2432:5
2430:H
2428:6
2420:5
2418:)
2416:3
2395:5
2393:S
2391:2
2383:5
2381:O
2379:2
2371:5
2363:5
2344:4
2342:O
2340:2
2317:3
2315:)
2313:5
2311:H
2309:6
2301:3
2299:)
2297:3
2276:3
2272:2
2264:3
2260:2
2252:3
2250:)
2248:4
2244:2
2236:3
2234:S
2232:2
2224:3
2222:O
2220:2
2207:3
2199:3
2191:2
2189:)
2187:3
2183:2
2179:4
2177:O
2175:4
2167:3
2159:3
2151:3
2149:)
2147:2
2145:O
2143:3
2141:H
2139:2
2131:3
2087:2
2064:x
2029:e
2022:t
2015:v
1834:2
1819:U
1700:*
1491:2
1417:2
1413:3
1398:2
1373:2
1298:2
1294:3
1252:V
1230:K
1213:S
1208:P
1162:3
1148:F
1133:C
1040:3
1010:e
1003:t
996:v
972:3
970:)
968:5
966:H
964:2
956:3
954:)
952:3
944:3
942:)
940:2
938:O
936:7
934:H
932:5
912:3
908:2
900:3
896:3
888:3
884:2
876:3
874:S
872:2
864:3
862:O
860:2
842:4
834:3
832:)
830:4
826:2
818:3
816:)
814:3
806:3
798:3
785:3
777:3
769:3
761:3
753:6
751:H
749:2
741:3
717:2
658:O
656:2
637:2
633:5
609:e
602:t
595:v
567:.
542:.
530::
522::
516:8
499:.
493::
485::
458:.
454::
446::
423:.
419::
411::
388:.
384::
376::
353:.
339::
316:.
312::
304::
220:g
212:g
204:g
111:x
102:x
95:)
93:x
83:(
Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.
