883:
operations. The safety as well as responsible environmental care have become major factors of paramount importance in the MOCVD-based crystal growth of compound semiconductors. As the application of this technique in industry has grown, a number of companies have also grown and evolved over the years to provide the ancillary equipment required to reduce risk. This equipment includes but is not limited to computer automated gas and chemical delivery systems, toxic and carrier gas sniffing sensors which can detect single digit ppb amounts of gas, and of course abatement equipment to fully capture toxic materials which can be present in the growth of arsenic containing alloys such as GaAs and InGaAsP.
31:
208:
163:
and the subspecies absorb onto the semiconductor wafer surface. Surface reaction of the precursor subspecies results in the incorporation of elements into a new epitaxial layer of the semiconductor crystal lattice. In the mass-transport-limited growth regime in which MOCVD reactors typically operate,
882:
As MOCVD has become well-established production technology, there are equally growing concerns associated with its bearing on personnel and community safety, environmental impact and maximum quantities of hazardous materials (such as gases and metalorganics) permissible in the device fabrication
250:
One type of reactor used to carry out MOCVD is a cold-wall reactor. In a cold-wall reactor, the substrate is supported by a pedestal, which also acts as a susceptor. The pedestal/susceptor is the primary origin of heat energy in the reaction chamber. Only the susceptor is heated, so gases do not
251:
react before they reach the hot wafer surface. The pedestal/susceptor is made of a radiation-absorbing material such as carbon. In contrast, the walls of the reaction chamber in a cold-wall reactor are typically made of quartz which is largely transparent to the
255:. The reaction chamber walls in a cold-wall reactor, however, may be indirectly heated by heat radiating from the hot pedestal/susceptor, but will remain cooler than the pedestal/susceptor and the substrate the pedestal/susceptor supports.
227:, such as quartz, are often used as the liner in the reactor chamber between the reactor wall and the susceptor. To prevent overheating, cooling water must be flowing through the channels within the reactor walls. A substrate sits on a
215:
In the metal organic chemical vapor deposition (MOCVD) technique, reactant gases are combined at elevated temperatures in the reactor to cause a chemical interaction, resulting in the deposition of materials on the substrate.
191:
strength of the precursor. The more carbon atoms are attached to the central metal atom, the weaker the bond. The diffusion of atoms on the substrate surface is affected by atomic steps on the surface.
297:. Toxic waste products must be converted to liquid or solid wastes for recycling (preferably) or disposal. Ideally processes will be designed to minimize the production of waste products.
219:
A reactor is a chamber made of a material that does not react with the chemicals being used. It must also withstand high temperatures. This chamber is composed by reactor walls, liner, a
750:
735:
740:
745:
68:
method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to
278:, which picks up some metalorganic vapour and transports it to the reactor. The amount of metalorganic vapour transported depends on the rate of carrier gas flow and the bubbler
258:
In hot-wall CVD, the entire chamber is heated. This may be necessary for some gases to be pre-cracked before reaching the wafer surface to allow them to stick to the wafer.
715:
710:
785:
760:
282:, and is usually controlled automatically and most accurately by using an ultrasonic concentration measuring feedback gas control system. Allowance must be made for
231:
which is at a controlled temperature. The susceptor is made from a material resistant to the temperature and metalorganic compounds used, often it is machined from
199:
of the group III metal organic source is an important control parameter for MOCVD growth, since it determines the growth rate in the mass-transport-limited regime.
17:
1059:
223:, gas injection units, and temperature control units. Usually, the reactor walls are made from stainless steel or quartz. Ceramic or special
936:
124:
In MOCVD ultrapure precursor gases are injected into a reactor, usually with a non-reactive carrier gas. For a III-V semiconductor, a
1074:
996:
969:
164:
growth is driven by supersaturation of chemical species in the vapor phase. MOCVD can grow films containing combinations of
670:
1028:
902:
361:
1069:
1064:
665:
690:
675:
655:
780:
685:
660:
65:
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252:
93:
92:). As such, this technique is preferred for the formation of devices incorporating thermodynamically
592:
392:
892:
755:
105:
912:
730:
531:
128:
could be used as the group III precursor and a hydride for the group V precursor. For example,
109:
69:
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101:
986:
917:
8:
1043:
For examples see the websites of
Matheson Tri Gas, Honeywell, Applied Energy, DOD Systems
645:
398:
156:
113:
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311:
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Gas is introduced via devices known as 'bubblers'. In a bubbler a carrier gas (usually
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336:
283:
236:
133:
97:
765:
355:
235:. For growing nitrides and related materials, a special coating, typically of
196:
169:
47:
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is by chemical reaction and not physical deposition. This takes place not in
1053:
907:
817:
188:
243:, on the graphite susceptor is necessary to prevent corrosion by ammonia (NH
614:
181:
125:
948:
How MOCVD works. Deposition
Technology for Beginners, Aixtron, May 2011.
620:
279:
165:
89:
1024:
104:, its most widespread application. It was first demonstrated in 1967 at
448:
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27:
Method of producing thin films (polycrystalline and single crystal)
1012:
849:
526:
514:
474:
436:
404:
325:
96:
alloys, and it has become a major process in the manufacture of
30:
871:
479:
344:
275:
207:
77:
224:
812:
807:
609:
802:
797:
187:
Required pyrolysis temperature increases with increasing
81:
274:
for nitride growth) is bubbled through the metalorganic
988:
Organometallic Vapor-Phase
Epitaxy: Theory and Practice
984:
961:
Springer
Handbook of Electronic and Photonic Materials
389:
Dimethylamino germanium trichloride (DiMAGeC), Liquid
559:
367:
383:
877:
261:
1051:
629:
978:
1025:Metalorganic chemical vapor deposition (MOCVD)
289:
300:
957:
985:Gerald B. Stringfellow (2 December 2012).
958:Kasap, Safa; Capper, Peter (August 2007).
865:
206:
29:
1015:Advanced Institute of Technology, 2004.
791:
634:
112:) Autonetics Division in Anaheim CA by
58:metalorganic chemical vapour deposition
14:
1052:
604:Di-tert-butyl selenide (DTBSe), Liquid
511:Tri-isopropyl antimony (TIPSb), Liquid
270:in arsenide & phosphide growth or
601:Di-isopropyl selenide (DIPSe), Liquid
202:
1060:Chemical vapor deposition techniques
843:
540:Methyl Allyl Cadmium (MACd), Liquid
489:Tertiarybutyl arsine (TBAs), Liquid
119:
24:
362:Di-isopropylmethylindium (DIPMeIn)
25:
1086:
991:. Elsevier Science. pp. 3–.
505:Trimethyl antimony (TMSb), Liquid
433:Tertiarybutylamine (TBAm), Liquid
39:Metalorganic vapour-phase epitaxy
1075:Semiconductor device fabrication
556:Diethyl telluride (DETe), Liquid
508:Triethyl antimony (TESb), Liquid
469:Bisphosphinoethane (BPE), Liquid
18:Metalorganic vapor phase epitaxy
1011:MOCVD Basics and Applications,
903:List of semiconductor materials
598:Diethyl selenide (DESe), Liquid
495:Trimethyl arsine (TMAs), Liquid
492:Monoethyl arsine (MEAs), Liquid
295:Gas exhaust and cleaning system
155:As the precursors approach the
1037:
1018:
1005:
951:
942:
930:
878:Environment, health and safety
560:Di-isopropyl telluride (DIPTe)
537:Diethyl cadmium (DECd), Liquid
262:Gas inlet and switching system
13:
1:
923:
630:Semiconductors grown by MOCVD
464:Tertiarybutyl phosphine (TBP)
337:Triethylgallium (TEG or TEGa)
7:
1031:September 27, 2010, at the
886:
368:Ethyldimethylindium (EDMIn)
290:Pressure maintenance system
34:Illustration of the process
10:
1091:
66:chemical vapour deposition
393:Tetramethylgermane (TMGe)
301:Organometallic precursors
253:electromagnetic radiation
593:Dimethyl selenide (DMSe)
939:, Johnson Matthey, GPT.
893:Atomic layer deposition
532:Dimethyl cadmium (DMCd)
106:North American Aviation
913:Molecular beam epitaxy
866:IV-V-VI Semiconductors
212:
110:Rockwell International
70:molecular-beam epitaxy
35:
577:Titanium isopropoxide
358:(TEI or TEIn), Liquid
333:(TMG or TMGa), Liquid
320:(TEA or TEAl), Liquid
314:(TMA or TMAl), Liquid
210:
102:light-emitting diodes
72:(MBE), the growth of
33:
1070:Thin film deposition
1065:Semiconductor growth
918:Thin-film deposition
792:II-VI semiconductors
635:III-V semiconductors
352:(TMI or TMIn), Solid
50:vapour-phase epitaxy
399:Tetraethylgermanium
157:semiconductor wafer
114:Harold M. Manasevit
551:Dimethyl telluride
312:Trimethylaluminium
213:
203:Reactor components
132:can be grown with
84:phase at moderate
36:
998:978-0-323-13917-5
971:978-0-387-29185-7
898:Hydrogen purifier
844:IV Semiconductors
581:Titanium ethoxide
428:Dimethylhydrazine
318:Triethylaluminium
45:), also known as
16:(Redirected from
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1044:
1041:
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1016:
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1002:
982:
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860:Strained silicon
838:
422:Phenyl hydrazine
331:Trimethylgallium
284:saturated vapors
241:tantalum carbide
130:indium phosphide
120:Basic principles
88:(10 to 760
21:
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1085:
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1033:Wayback Machine
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381:Isobutylgermane
350:Trimethylindium
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237:silicon nitride
211:MOCVD apparatus
205:
159:, they undergo
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134:trimethylindium
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98:optoelectronics
80:, but from the
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553:(DMTe), Liquid
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401:(TEGe), Liquid
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197:vapor pressure
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48:organometallic
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937:MOCVD Epitaxy
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908:Metalorganics
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623:(DEZ), Liquid
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617:(DMZ), Liquid
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189:chemical bond
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964:. Springer.
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833:
826:
615:Dimethylzinc
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126:metalorganic
123:
61:
57:
53:
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37:
621:Diethylzinc
280:temperature
1054:Categories
924:References
575:, such as
449:Phosphorus
100:, such as
94:metastable
573:Alkoxides
546:Tellurium
454:Phosphine
376:Germanium
307:Aluminium
229:susceptor
221:susceptor
166:group III
161:pyrolysis
146:phosphine
86:pressures
1029:Archived
887:See also
736:GaInAlAs
595:, Liquid
588:Selenium
568:Titanium
562:, Liquid
534:, Liquid
501:Antimony
466:, Liquid
424:, Liquid
417:Nitrogen
395:, Liquid
386:, Liquid
370:, Liquid
364:, Liquid
339:, Liquid
272:nitrogen
268:hydrogen
233:graphite
182:group IV
178:group VI
174:group II
144:In) and
74:crystals
64:), is a
1013:Samsung
751:GaInAsP
746:GaInAsN
741:GaInAlN
671:AlGaInP
527:Cadmium
515:Stibine
475:Arsenic
437:Ammonia
405:Germane
326:Gallium
247:) gas.
225:glasses
170:group V
108:(later
995:
968:
872:GeSbTe
781:InAsSb
756:GaInAs
726:InGaSb
711:InAlAs
691:GaAsSb
676:AlInSb
666:AlGaSb
661:AlGaAs
480:Arsine
384:(IBGe)
345:Indium
276:liquid
78:vacuum
786:AlInN
761:GaInP
731:InGaN
716:InAlP
686:GaAsP
656:AlGaP
651:AlGaN
521:, Gas
486:, Gas
460:, Gas
443:, Gas
411:, Gas
62:MOCVD
56:) or
54:OMVPE
43:MOVPE
993:ISBN
966:ISBN
813:ZnTe
808:ZnSe
776:InAs
721:InSb
696:GaAs
681:GaSb
610:Zinc
195:The
176:and
168:and
136:((CH
90:Torr
818:CdO
803:ZnS
798:ZnO
771:InP
766:InN
706:GaP
701:GaN
646:AlP
641:AlN
579:or
517:SbH
482:AsH
407:GeH
239:or
148:(PH
82:gas
1056::
1027:.
855:Ge
850:Si
837:Te
832:1−
830:Hg
824:Cd
456:PH
439:NH
286:.
184:.
180:,
172:,
116:.
1001:.
974:.
834:x
827:x
519:3
484:3
458:3
441:3
409:4
245:3
150:3
142:3
140:)
138:3
60:(
52:(
41:(
20:)
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