428:
371:
115:
124:
513:-based front end. The tunnel diode can also be used as a low-noise microwave amplifier. Since its discovery, more conventional semiconductor devices have surpassed its performance using conventional oscillator techniques. For many purposes, a three-terminal device, such as a field-effect transistor, is more flexible than a device with only two terminals. Practical tunnel diodes operate at a few milliamperes and a few tenths of a volt, making them low-power devices. The
27:
282:
549:. They go on to report that a small-scale test of 50 year-old devices revealed a "gratifying confirmation of the diode's longevity". As noticed on some samples of Esaki diodes, the gold-plated iron pins can in fact corrode and short out to the case. This can usually be diagnosed and treated with simple peroxide / vinegar technique normally used for repairing phone PCBs and the diode inside normally still works.
446:
In a conventional semiconductor diode, conduction takes place while the P-N junction is forward biased and blocks current flow when the junction is reverse biased. This occurs up to a point known as the "reverse breakdown voltage" at which point conduction begins (often accompanied by destruction of
342:
at first tunnel through the very narrow P-N junction barrier and fill electron states in the conduction band on the N-side which become aligned with empty valence band hole states on the P-side of the P-N junction. As voltage increases further, these states become increasingly misaligned, and the
355:
voltage. As voltage increases beyond a fixed transition point, the diode begins to operate as a normal diode, where electrons travel by conduction across the P-N junction, and no longer by tunneling through the PâN junction barrier. The most important operating region for a tunnel diode is the
491:
The tunnel diode showed great promise as an oscillator and high-frequency threshold (trigger) device since it operated at frequencies far greater than the tetrode could: well into the microwave bands. Applications of tunnel diodes included local oscillators for
747:
and doing his internship at Tokyo
Tsushin Kogyo under Esaki's supervision, was a co-author. Suzuki, along with Yuriko Kurose, first observed the negative differential resistance when they were testing heavily doped P-N
508:
receiver used a microstrip tunnel diode amplifier (TDA) front-end in the 14â15.5 GHz frequency band. Such amplifiers were considered state-of-the-art, with better performance at high frequencies than any
552:
Surplus
Russian components are also reliable and often can be purchased for a few pence, despite original cost being in the ÂŁ30â50 range. The units typically sold are GaAs based and have a
293:
output is limited to a few hundred milliwatts due to their small voltage swing. In recent years, however, new devices that use the tunneling mechanism have been developed. The
743:
In the first public report of the discovery (presentation at the 12th annual meeting of the
Physical Society of Japan in October 1957), Takashi Suzuki, who was a student at
647:
984:
1919:
419:, filled states on the P-side become increasingly aligned with empty states on the N-side, and electrons now tunnel through the P-N junction barrier in reverse direction.
899:
835:
1957:
814:
966:
381:
curve similar to a tunnel diode characteristic curve. It has "negative" differential resistance in the shaded voltage region, between
2831:
2472:
992:
940:
2389:
2170:
1950:
1827:
447:
the device). In the tunnel diode, the dopant concentrations in the P and N layers are increased to a level such that the
322:(MIM) diode, but due to inherent sensitivities, its present application appears to be limited to research environments.
2153:
2049:
1058:
882:
845:
798:
2293:
2020:
1483:
1775:
1154:
2341:
2140:
1887:
308:
1943:
1304:
1292:
1183:
731:
541:, Esaki and coauthors state that semiconductor devices in general are extremely stable, and suggest that their
524:
than other diodes. This makes them well suited to higher radiation environments such as those found in space.
532:
Tunnel diodes are susceptible to damage by overheating, and thus special care is needed when soldering them.
535:
Tunnel diodes are notable for their longevity, with devices made in the 1960s still functioning. Writing in
3000:
2372:
2124:
1882:
1877:
1471:
182:, but was discouraged from pursuing it. Tunnel diodes were first manufactured by Sony in 1957, followed by
3010:
3005:
2176:
2113:
1871:
1837:
1765:
744:
898:
Brown, E.R.; Söderström, J.R.; Parker, C.D.; Mahoney, L.J.; Molvar, K.M.; McGill, T.C. (18 March 1991).
2836:
2383:
1795:
1478:
1466:
970:
455:
and the diode conducts in the reverse direction. However, when forward-biased, an effect occurs called
642:
2590:
2304:
2147:
2032:
820:
300:
2599:
2457:
2309:
2165:
1687:
609:
505:
295:
758:
2610:
2330:
2129:
1790:
1321:
907:
44:
1236:
2779:
2346:
2211:
2187:
1667:
208:
190:
167:
500:, high-speed counter circuits, and very fast-rise time pulse generator circuits. In 1977, the
2848:
2800:
2621:
2437:
2352:
2283:
2119:
1361:
1261:
318:
243:
427:
2922:
2666:
2561:
2335:
2228:
2082:
2043:
1974:
1966:
1805:
1731:
1683:
1503:
1275:
1241:
1089:
1023:
1014:
Mott, R.C. (November 1978). "Intelsat V 14 GHz tunnel diode noise figure study".
916:
674:
493:
8:
2642:
2550:
2442:
2278:
2255:
1842:
1695:
1416:
521:
472:
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370:
239:
147:
143:
1093:
1027:
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678:
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with zero offset voltage and extreme linearity for power signals (they have an accurate
2947:
2807:
2515:
2482:
2298:
2182:
2160:
1712:
1559:
1376:
1246:
1176:
171:
32:
2942:
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2754:
2706:
2535:
2462:
2424:
1800:
1755:
1705:
1624:
1513:
1431:
1107:
1054:
1031:
932:
878:
794:
787:
456:
356:"negative resistance" region. Its graph is different from normal P-N junction diode.
251:
155:
151:
106:
59:
2658:
2605:
2432:
2071:
1631:
1251:
1097:
1080:
924:
707:
682:
546:
537:
263:
223:
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2467:
662:
2995:
2935:
2868:
2721:
2452:
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2206:
1903:
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1700:
1201:
1125:
711:
614:
589:
290:
259:
205:
114:
2093:
438:
curve of 10 mA germanium tunnel diode, taken on a
Tektronix model 571
127:
10 mA germanium tunnel diode mounted in test fixture of
Tektronix 571
2910:
2691:
2681:
2447:
2250:
1351:
870:
701:
365:
789:
The Man Behind the
Microchip: Robert Noyce and the Invention of Silicon Valley
2989:
2972:
2795:
2711:
2530:
2357:
2325:
1750:
1646:
1604:
1518:
1446:
1268:
1169:
1035:
936:
782:
215:
197:
186:
and other companies from about 1960, and are still made in low volume today.
123:
686:
2853:
2841:
2729:
2696:
2525:
2510:
2077:
1421:
1356:
1215:
1111:
732:"The Esaki Diode, Chapter 9 The Model 2T7 Transistor, Part I, Sony History"
604:
599:
497:
439:
416:
331:
212:
175:
128:
459:
which gives rise to a region in its voltage vs. current behavior where an
2895:
2637:
2586:
2492:
2477:
2260:
2222:
1722:
1589:
1533:
1498:
1488:
1456:
1451:
1441:
1297:
1220:
619:
480:
267:
26:
1935:
900:"Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes"
289:
Due to their low output power, tunnel diodes are not widely used: Their
2967:
2957:
2890:
2764:
2734:
2701:
2676:
2671:
2648:
2520:
2500:
2378:
2240:
2217:
2103:
2005:
2000:
1995:
1924:
1780:
1609:
1584:
1366:
1256:
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542:
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510:
275:
255:
2930:
2774:
2769:
2759:
2686:
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2400:
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2245:
1727:
1619:
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1371:
1285:
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928:
408:
281:
271:
247:
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159:
69:
1331:
1102:
1075:
162:
and Yuriko Kurose when working at Tokyo
Tsushin Kogyo, now known as
2952:
2900:
2880:
2858:
2744:
2739:
2627:
2616:
2545:
2315:
1426:
1396:
840:
501:
339:
201:
178:
independently devised the idea of a tunnel diode while working for
2812:
2749:
2571:
2556:
2410:
2367:
2015:
1785:
1717:
1636:
1599:
1574:
1564:
1554:
1523:
1436:
1346:
1336:
1309:
517:
has similar high frequency capability and can handle more power.
476:
335:
227:
99:
1569:
2885:
2576:
2540:
2505:
2065:
2037:
2010:
1985:
1848:
1832:
1672:
1461:
1411:
1406:
1391:
1053:(4th ed.). London, UK: Newnes-Butterworth. pp. 8â18.
2962:
2873:
2632:
2405:
2198:
2060:
2055:
1614:
1528:
1401:
1386:
1341:
985:"The MIM diode: Another challenger for the electronics crown"
399:
When used in the reverse direction, tunnel diodes are called
95:
1920:
Sony
Toshiba IBM Center of Competence for the Cell Processor
967:"Electronics advance moves closer to a world beyond silicon"
897:
700:
Esaki, Reona (Leo); Kurose, Yuriko; Suzuki, Takashi (1957).
242:
in part of their operating range allows them to function as
2905:
2288:
2234:
2135:
2088:
2026:
1854:
1651:
1641:
1549:
1508:
1192:
1074:
Esaki, Leo; Arakawa, Yasuhiko; Kitamura, Masatoshi (2010).
163:
83:
471:" region can be exploited in a solid state version of the
312:(MIIM) diode, where an additional insulator layer allows "
299:(RTD) has achieved some of the highest frequencies of any
1381:
316:" for more precise control of the diode. There is also a
759:"The Nobel Prize in Physics 1973: Award ceremony speech"
274:
frequencies, far above the range of ordinary diodes and
1161:
1076:"Esaki diode is still a radio star, half a century on"
1073:
637:
635:
1904:Sony Institute of Higher Education Shohoku College
786:
663:"New Phenomenon in Narrow Germanium pân Junctions"
579:, and so should be protected against overcurrent.
706:. Physical Society of Japan 1957 annual meeting.
699:
2987:
632:
415:characteristic in the reverse direction). Under
285:8â12 GHz tunnel diode amplifier, circa 1970
869:
693:
16:Diode that works using quantum tunneling effect
1951:
1741:
1177:
200:) wide. The heavy doping results in a broken
211:on the N-side are more or less aligned with
1958:
1944:
1184:
1170:
1067:
724:
703:Internal Field Emission at Ge P-N Junction
218:on the P-side. They are usually made from
25:
1965:
1101:
359:
325:
158:. It was invented in August 1957 by
426:
422:
369:
280:
122:
836:"Tunnel diodes: the transistor killers"
793:. Oxford, UK: Oxford University Press.
496:television tuners, trigger circuits in
463:in forward voltage is accompanied by a
2988:
1048:
964:
865:
863:
781:
170:for experimental demonstration of the
1939:
1165:
1051:Electronics Engineer's Reference Book
660:
2390:Three-dimensional integrated circuit
1013:
572:ratio of 5:1 at around 1â20 mA
2171:Programmable unijunction transistor
860:
196:that is about 10 nm (100
194:positive-to-negative (P-N) junction
13:
2072:Multi-gate field-effect transistor
991:. 19 November 2010. Archived from
833:
306:Another type of tunnel diode is a
14:
3022:
2050:Insulated-gate bipolar transistor
1147:
965:Conley, John (4 September 2013).
2294:Heterostructure barrier varactor
2021:Chemical field-effect transistor
545:should be "infinite" if kept at
345:negative differential resistance
240:negative differential resistance
226:, gallium antimonide (GaSb) and
113:
2342:Mixed-signal integrated circuit
1118:
1042:
1007:
977:
958:
891:
522:resistant to ionizing radiation
486:
309:metal-insulator-insulator-metal
31:1N3716 tunnel diode (with 0.1"
1305:Sony Music Entertainment Japan
1293:Sony Interactive Entertainment
827:
807:
775:
751:
661:Esaki, Leo (15 January 1958).
654:
343:current drops. This is called
166:. In 1973, Esaki received the
1:
877:. New York, NY: McGraw Hill.
875:Electronic Engineers Handbook
819:(in Japanese). Archived from
626:
189:Tunnel diodes have a heavily
2373:Silicon controlled rectifier
2235:Organic light-emitting diode
2125:Diffused junction transistor
1874:(umbrella company in the US)
1242:Sony Semiconductor Solutions
712:10.11316/jpsgaiyoi.12.5.0_85
527:
520:Tunnel diodes are also more
457:quantum mechanical tunneling
222:, but can also be made from
7:
2177:Static induction transistor
2114:Bipolar junction transistor
2066:MOS field-effect transistor
2038:Fin field-effect transistor
1872:Sony Corporation of America
1838:Sony Professional Solutions
1833:Sony Network Communications
745:Tokyo University of Science
582:
270:allows them to function at
10:
3027:
2384:Static induction thyristor
1796:Sony Entertainment Network
1479:Sony Entertainment Network
1049:Turner, L.W., ed. (1976).
971:OSU College of Engineering
467:in forward current. This "
363:
174:effect in semiconductors.
2921:
2821:
2788:
2720:
2657:
2585:
2553:(Hexode, Heptode, Octode)
2491:
2423:
2305:Hybrid integrated circuit
2269:
2197:
2148:Light-emitting transistor
2102:
1984:
1973:
1912:
1896:
1864:
1820:
1682:
1660:
1542:
1320:
1229:
1208:
1199:
449:reverse breakdown voltage
112:
105:
89:
77:
65:
50:
40:
24:
2600:Backward-wave oscillator
2310:Light emitting capacitor
2166:Point-contact transistor
2136:Junction Gate FET (JFET)
1728:Great American Pure Flix
1191:
815:
734:. Sony Corporation. 1996
610:Resonant-tunneling diode
296:resonant-tunneling diode
258:. They are also used as
2611:Crossed-field amplifier
2130:Field-effect transistor
1897:Nonprofit organizations
1155:"Tunnel Diode tutorial"
1126:"Russian tunnel diodes"
1016:COMSAT Technical Review
908:Applied Physics Letters
687:10.1103/PhysRev.109.603
645:, issued 1962-05-08
233:
91:Pin configuration
2780:Voltage-regulator tube
2347:MOS integrated circuit
2212:Constant-current diode
2188:Unijunction transistor
1668:Sony Creative Software
475:which normally uses a
443:
407:) and can act as fast
396:
360:Reverse bias operation
326:Forward bias operation
286:
168:Nobel Prize in Physics
146:that has effectively "
131:
79:First production
2849:Electrolytic detector
2622:Inductive output tube
2438:Low-dropout regulator
2353:Organic semiconductor
2284:Printed circuit board
2120:Darlington transistor
1967:Electronic components
1766:Anime Digital Network
430:
423:Technical comparisons
373:
319:metal-insulator-metal
284:
126:
2667:Beam deflection tube
2336:Metal oxide varistor
2229:Light-emitting diode
2083:Thin-film transistor
2044:Floating-gate MOSFET
1883:List of acquisitions
1732:Great American Media
1730:(joint venture with
1276:Sony Financial Group
946:on 23 September 2015
338:begins to increase,
260:frequency converters
3001:Japanese inventions
2643:Traveling-wave tube
2443:Switching regulator
2279:Printed electronics
2256:Step recovery diode
2033:Depletion-load NMOS
1843:Sony Honda Mobility
1696:PlayStation Network
1684:Online distribution
1543:Historical products
1514:Video8/Hi8/Digital8
1094:2010Natur.464Q..31E
1028:1978COMTR...8..487M
995:on 24 December 2016
921:1991ApPhL..58.2291B
823:on 2 February 2009.
679:1958PhRv..109..603E
473:dynatron oscillator
469:negative resistance
148:negative resistance
144:semiconductor diode
21:
3011:1957 introductions
3006:1957 in technology
2948:Crystal oscillator
2808:Variable capacitor
2483:Switched capacitor
2425:Voltage regulators
2299:Integrated circuit
2183:Tetrode transistor
2161:Pentode transistor
2154:Organic LET (OLET)
2141:Organic FET (OFET)
1878:Other subsidiaries
1713:Sony Pictures Core
1247:Sony Entertainment
1230:Primary businesses
479:thermionic valve (
444:
397:
287:
252:switching circuits
172:electron tunneling
152:quantum mechanical
132:
19:
2983:
2982:
2943:Ceramic resonator
2755:Mercury-arc valve
2707:Video camera tube
2659:Cathode-ray tubes
2419:
2418:
2027:Complementary MOS
1933:
1932:
1888:List of libraries
1816:
1815:
1756:PlayStation Video
1706:PlayStation Store
848:on 7 January 2010
121:
120:
107:Electronic symbol
60:Quantum tunneling
52:Working principle
3018:
2837:electrical power
2722:Gas-filled tubes
2606:Cavity magnetron
2433:Linear regulator
1982:
1981:
1960:
1953:
1946:
1937:
1936:
1821:Other businesses
1739:
1738:
1252:Sony Music Group
1237:Sony Corporation
1186:
1179:
1172:
1163:
1162:
1158:
1142:
1141:
1139:
1137:
1122:
1116:
1115:
1105:
1071:
1065:
1064:
1046:
1040:
1039:
1011:
1005:
1004:
1002:
1000:
981:
975:
974:
962:
956:
955:
953:
951:
945:
939:. Archived from
929:10.1063/1.104902
904:
895:
889:
888:
867:
858:
857:
855:
853:
844:. Archived from
834:Rostky, George.
831:
825:
824:
811:
805:
804:
792:
779:
773:
772:
770:
769:
755:
749:
742:
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739:
728:
722:
721:
719:
718:
697:
691:
690:
658:
652:
651:
650:
646:
639:
575:
571:
570:
566:
561:
557:
547:room temperature
437:
433:
391:
384:
380:
376:
347:because current
224:gallium arsenide
184:General Electric
180:William Shockley
117:
92:
80:
56:
55:
29:
22:
18:
3026:
3025:
3021:
3020:
3019:
3017:
3016:
3015:
2986:
2985:
2984:
2979:
2917:
2832:audio and video
2817:
2784:
2716:
2653:
2581:
2562:Photomultiplier
2487:
2415:
2363:Quantum circuit
2271:
2265:
2207:Avalanche diode
2193:
2105:
2098:
1987:
1976:
1969:
1964:
1934:
1929:
1908:
1892:
1860:
1812:
1771:Anime on Demand
1761:PlayStation Vue
1737:
1701:PlayStation Now
1686:
1678:
1673:FeliCa Networks
1656:
1538:
1472:8 channel films
1323:
1316:
1225:
1204:
1195:
1190:
1153:
1150:
1145:
1135:
1133:
1124:
1123:
1119:
1103:10.1038/464031b
1072:
1068:
1061:
1047:
1043:
1012:
1008:
998:
996:
983:
982:
978:
963:
959:
949:
947:
943:
902:
896:
892:
885:
871:Fink, Donald G.
868:
861:
851:
849:
832:
828:
817:
813:
812:
808:
801:
780:
776:
767:
765:
757:
756:
752:
737:
735:
730:
729:
725:
716:
714:
698:
694:
667:Physical Review
659:
655:
648:
641:
640:
633:
629:
624:
615:Tunnel junction
590:Avalanche diode
585:
578:
573:
569:
564:
563:
560:
555:
554:
553:
530:
489:
435:
431:
425:
405:backward diodes
394:
389:
387:
382:
378:
374:
368:
362:
328:
291:radio frequency
236:
209:electron states
206:conduction band
90:
78:
72:
53:
51:
36:
17:
12:
11:
5:
3024:
3014:
3013:
3008:
3003:
2998:
2981:
2980:
2978:
2977:
2976:
2975:
2970:
2960:
2955:
2950:
2945:
2940:
2939:
2938:
2927:
2925:
2919:
2918:
2916:
2915:
2914:
2913:
2911:Wollaston wire
2903:
2898:
2893:
2888:
2883:
2878:
2877:
2876:
2871:
2861:
2856:
2851:
2846:
2845:
2844:
2839:
2834:
2825:
2823:
2819:
2818:
2816:
2815:
2810:
2805:
2804:
2803:
2792:
2790:
2786:
2785:
2783:
2782:
2777:
2772:
2767:
2762:
2757:
2752:
2747:
2742:
2737:
2732:
2726:
2724:
2718:
2717:
2715:
2714:
2709:
2704:
2699:
2694:
2692:Selectron tube
2689:
2684:
2682:Magic eye tube
2679:
2674:
2669:
2663:
2661:
2655:
2654:
2652:
2651:
2646:
2640:
2635:
2630:
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2619:
2614:
2608:
2603:
2596:
2594:
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2574:
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2559:
2554:
2548:
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2538:
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2528:
2523:
2518:
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2508:
2503:
2497:
2495:
2489:
2488:
2486:
2485:
2480:
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2465:
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873:, ed. (1975).
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673:(2): 603â604.
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366:Backward diode
364:Main article:
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154:effect called
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1377:Dream Machine
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1257:Entertainment
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800:0-19-516343-5
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498:oscilloscopes
495:
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420:
418:
414:
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341:
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330:Under normal
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150:" due to the
149:
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142:is a type of
141:
137:
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125:
116:
111:
108:
104:
101:
97:
94:
88:
85:
82:
76:
73:Yuriko Kurose
71:
68:
64:
61:
58:
49:
46:
43:
39:
34:
28:
23:
2730:Cold cathode
2697:Storage tube
2587:Vacuum tubes
2536:Neutron tube
2511:Beam tetrode
2493:Vacuum tubes
2078:Power MOSFET
1865:Other assets
1742:
1494:Tunnel diode
1493:
1422:Memory Stick
1417:LocationFree
1322:Technologies
1216:Masaru Ibuka
1134:. Retrieved
1129:
1120:
1088:(7285): 31.
1085:
1079:
1069:
1050:
1044:
1019:
1015:
1009:
997:. Retrieved
993:the original
989:SciTechStory
988:
979:
960:
948:. Retrieved
941:the original
915:(20): 2291.
912:
906:
893:
874:
850:. Retrieved
846:the original
839:
829:
821:the original
809:
788:
777:
766:. Retrieved
762:
753:
736:. Retrieved
726:
715:. Retrieved
702:
695:
670:
666:
656:
605:Lambda diode
600:IMPATT diode
551:
536:
534:
531:
519:
490:
487:Applications
464:
460:
452:
448:
445:
440:curve tracer
417:reverse bias
404:
400:
398:
352:
348:
344:
332:forward bias
329:
317:
313:
307:
305:
303:oscillator.
294:
288:
266:. Their low
237:
213:valence band
188:
176:Robert Noyce
139:
136:tunnel diode
135:
133:
129:curve tracer
20:Tunnel diode
2896:Transformer
2638:Sutton tube
2478:Charge pump
2331:Memory cell
2261:Zener diode
2223:Laser diode
2106:transistors
1988:transistors
1723:Crunchyroll
1661:Electronics
1499:TransferJet
1489:Sony Tablet
1452:PlayStation
1298:PlayStation
1221:Akio Morita
1136:13 November
1022:: 487â507.
950:26 December
620:Zener diode
481:vacuum tube
401:back diodes
301:solid-state
276:transistors
268:capacitance
244:oscillators
230:materials.
216:hole states
140:Esaki diode
2990:Categories
2968:reed relay
2958:Parametron
2891:Thermistor
2869:resettable
2828:Connector
2789:Adjustable
2765:Nixie tube
2735:Crossatron
2702:Trochotron
2677:Iconoscope
2672:Charactron
2649:X-ray tube
2521:Compactron
2501:Acorn tube
2458:Buckâboost
2379:Solaristor
2241:Photodiode
2218:Gunn diode
2214:(CLD, CRD)
1996:Transistor
1925:Sony timer
1781:Funimation
1367:Cyber-shot
1324:and brands
1262:Publishing
768:2023-12-17
748:junctions.
738:2018-04-04
717:2024-07-07
643:US 3033714
627:References
595:Gunn diode
543:shelf life
515:Gunn diode
511:transistor
413:square law
409:rectifiers
353:increasing
256:hysteresis
248:amplifiers
35:for scale)
2931:Capacitor
2775:Trigatron
2770:Thyratron
2760:Neon lamp
2687:Monoscope
2567:Phototube
2551:Pentagrid
2516:Barretter
2401:Trancitor
2396:Thyristor
2321:Memristor
2246:PIN diode
2023:(ChemFET)
1828:Sony DADC
1806:Minisodes
1688:platforms
1625:FD series
1620:Trinitron
1580:Jumbotron
1570:Sony CLIĂ
1332:α (Alpha)
1286:Sony Bank
1281:Sony Life
1132:. TekWiki
1036:0095-9669
999:4 January
937:0003-6951
852:2 October
816:ăœăăŒćć°äœăźæŽćČ
528:Longevity
506:satellite
349:decreases
340:electrons
272:microwave
264:detectors
250:, and in
220:germanium
160:Leo Esaki
156:tunneling
70:Leo Esaki
2953:Inductor
2923:Reactive
2901:Varistor
2881:Resistor
2859:Antifuse
2745:Ignitron
2740:Dekatron
2628:Klystron
2617:Gyrotron
2546:Nuvistor
2463:Split-pi
2349:(MOS IC)
2316:Memistor
2074:(MuGFET)
2068:(MOSFET)
2040:(FinFET)
1776:AnimeLab
1647:Watchman
1519:Vision-S
1427:MiniDisc
1397:Handycam
1209:Founders
1130:w140.com
1112:20203587
841:EE Times
785:(2005).
583:See also
504: V
502:Intelsat
465:decrease
461:increase
451:becomes
204:, where
202:band gap
66:Invented
2854:Ferrite
2822:Passive
2813:Varicap
2801:digital
2750:Krytron
2572:Tetrode
2557:Pentode
2411:Varicap
2392:(3D IC)
2368:RF CMOS
2272:devices
2046:(FGMOS)
1977:devices
1851:(39.4%)
1801:Crackle
1786:Wakanim
1751:PlayNow
1718:SonyLIV
1637:U-matic
1600:Optiarc
1575:Discman
1565:Betamax
1555:CV-2000
1524:Walkman
1447:PlayNow
1437:MicroMV
1347:Blu-ray
1337:Betacam
1310:Aniplex
1202:History
1090:Bibcode
1024:Bibcode
917:Bibcode
675:Bibcode
562:⁄
477:tetrode
336:voltage
228:silicon
100:cathode
54:
45:Passive
2996:Diodes
2886:Switch
2577:Triode
2541:Nonode
2506:Audion
2386:(SITh)
2270:Other
2237:(OLED)
2199:Diodes
2150:(LET)
2132:(FET)
2104:Other
2052:(IGBT)
2029:(CMOS)
2016:BioFET
2011:BiCMOS
1857:(4.9%)
1605:Qualia
1590:Mavica
1534:Xperia
1462:S/PDIF
1457:Reader
1432:MiniDV
1412:Inzone
1407:HMZ-T1
1392:FeliCa
1352:Bravia
1110:
1081:Nature
1057:
1034:
935:
881:
797:
649:
538:Nature
254:using
33:jumper
2963:Relay
2936:types
2874:eFUSE
2645:(TWT)
2633:Maser
2624:(IOT)
2613:(CFA)
2602:(BWO)
2526:Diode
2473:SEPIC
2453:Boost
2406:TRIAC
2375:(SCR)
2338:(MOV)
2312:(LEC)
2231:(LED)
2190:(UJT)
2179:(SIT)
2173:(PUT)
2116:(BJT)
2085:(TFT)
2061:LDMOS
2056:ISFET
1913:Other
1845:(50%)
1675:(57%)
1615:TR-55
1610:Rolly
1585:Lissa
1529:XDCAM
1387:Exmor
1342:Bionz
944:(PDF)
903:(PDF)
351:with
191:doped
96:anode
2906:Wire
2864:Fuse
2448:Buck
2301:(IC)
2289:DIAC
2225:(LD)
2094:UMOS
2089:VMOS
2006:PMOS
2001:NMOS
1986:MOS
1855:Vaio
1652:WEGA
1642:Vaio
1595:NEWS
1550:AIBO
1509:Vaio
1484:SXRD
1467:SDDS
1442:mylo
1372:Dash
1362:Cell
1193:Sony
1138:2023
1108:PMID
1055:ISBN
1032:ISSN
1001:2017
952:2012
933:ISSN
879:ISBN
854:2009
795:ISBN
453:zero
434:vs.
403:(or
388:and
377:vs.
262:and
246:and
238:The
234:Uses
164:Sony
98:and
84:Sony
41:Type
2468:Äuk
1791:VRV
1560:DAT
1504:UMD
1382:DVD
1098:doi
1086:464
925:doi
708:doi
683:doi
671:109
494:UHF
483:).
138:or
2992::
2842:RF
2591:RF
1849:M3
1357:CD
1128:.
1106:.
1096:.
1084:.
1078:.
1030:.
1018:.
987:.
969:.
931:.
923:.
913:58
911:.
905:.
862:^
838:.
761:.
681:.
669:.
665:.
634:^
577:pk
559:pk
278:.
134:A
2593:)
2589:(
1959:e
1952:t
1945:v
1734:)
1185:e
1178:t
1171:v
1157:.
1140:.
1114:.
1100::
1092::
1063:.
1038:.
1026::
1020:8
1003:.
973:.
954:.
927::
919::
887:.
856:.
803:.
771:.
741:.
720:.
710::
689:.
685::
677::
574:I
568:v
565:I
556:I
442:.
436:V
432:I
395:.
393:2
390:V
386:1
383:V
379:V
375:I
198:Ă
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