Diode - Knowledge

1986:, occurs at a precisely defined voltage, allowing the diode to be used as a precision voltage reference. The term Zener diodes is colloquially applied to several types of breakdown diodes, but strictly speaking, Zener diodes have a breakdown voltage of below 5 volts, whilst avalanche diodes are used for breakdown voltages above that value. In practical voltage reference circuits, Zener and switching diodes are connected in series and opposite directions to balance the temperature coefficient response of the diodes to near-zero. Some devices labeled as high-voltage Zener diodes are actually avalanche diodes (see above). Two (equivalent) Zeners in series and in reverse order, in the same package, constitute a transient absorber (or 1611:. This occurs when the reverse electric field applied across the p–n junction causes a wave of ionization, reminiscent of an avalanche, leading to a large current. Avalanche diodes are designed to break down at a well-defined reverse voltage without being destroyed. The difference between the avalanche diode (which has a reverse breakdown above about 6.2 V) and the Zener is that the channel length of the former exceeds the mean free path of the electrons, resulting in many collisions between them on the way through the channel. The only practical difference between the two types is they have temperature coefficients of opposite polarities. 2076: 1559: 2561:. For longer-range (about a centimeter) particles, they need a very large depletion depth and large area. For short-range particles, they need any contact or un-depleted semiconductor on at least one surface to be very thin. The back-bias voltages are near breakdown (around a thousand volts per centimeter). Germanium and silicon are common materials. Some of these detectors sense position as well as energy. They have a finite life, especially when detecting heavy particles, because of radiation damage. Silicon and germanium are quite different in their ability to convert 311: 2133: 1000: 2557:, s of energy, generates many charge carrier pairs, as its energy is deposited in the semiconductor material. If the depletion layer is large enough to catch the whole shower or to stop a heavy particle, a fairly accurate measurement of the particle's energy can be made, simply by measuring the charge conducted and without the complexity of a magnetic spectrometer, etc. These semiconductor radiation detectors need efficient and uniform charge collection and low leakage current. They are often cooled by 2062: 2316: 1330: 2091: 2119: 2048: 571: 1254: 2105: 2033: 2752: 2385: 2021: 831: 1878:) acts as recombination centers, which helps the fast recombination of minority carriers. This allows the diode to operate at higher signal frequencies, at the expense of a higher forward voltage drop. Gold-doped diodes are faster than other p–n diodes (but not as fast as Schottky diodes). They also have less reverse-current leakage than Schottky diodes (but not as good as other p–n diodes). A typical example is the 1N914. 881: 90: 45: 1327:. For a normal P–N rectifier diode, the reverse current through the device is in the micro-ampere (μA) range. However, this is temperature dependent, and at sufficiently high temperatures, a substantial amount of reverse current can be observed (mA or more). There is also a tiny surface leakage current caused by electrons simply going around the diode as though it were an imperfect insulator. 942: 99: 2676: 1314:), and avalanche does not occur. Both devices, however, do have a limit to the maximum current and power they can withstand in the clamped reverse-voltage region. Also, following the end of forwarding conduction in any diode, there is reverse current for a short time. The device does not attain its full blocking capability until the reverse current ceases. 707:) during World War II for application in radar. After World War II, AT&T used these in its microwave towers that criss-crossed the United States, and many radar sets use them even in the 21st century. In 1946, Sylvania began offering the 1N34 crystal diode. During the early 1950s, junction diodes were developed. 1362:: At larger forward currents the current–voltage curve starts to be dominated by the ohmic resistance of the bulk semiconductor. The curve is no longer exponential, it is asymptotic to a straight line whose slope is the bulk resistance. This region is particularly important for power diodes and can be modeled by a 1949:, allowing amplification of signals and very simple bistable circuits. Because of the high carrier concentration, tunnel diodes are very fast, may be used at low (mK) temperatures, high magnetic fields, and in high radiation environments. Because of these properties, they are often used in spacecraft. 1585:

was used. Their low efficiency required a much higher forward voltage to be applied (typically 1.4 to 1.7 V per "cell", with multiple cells stacked so as to increase the peak inverse voltage rating for application in high voltage rectifiers), and required a large heat sink (often an extension of

2623:

may use diodes in this way to ensure that the current is only drawn from the battery when necessary. Likewise, small boats typically have two circuits each with their own battery/batteries: one used for engine starting; one used for domestics. Normally, both are charged from a single alternator, and

2441:

Diodes are frequently used to conduct damaging high voltages away from sensitive electronic devices. They are usually reverse-biased (non-conducting) under normal circumstances. When the voltage rises above the normal range, the diodes become forward-biased (conducting). For example, diodes are used

1501:

In detector and mixer applications, the current can be estimated by a Taylor's series. The odd terms can be omitted because they produce frequency components that are outside the pass band of the mixer or detector. Even terms beyond the second derivative usually need not be included because they are

2687:

can take a periodic alternating current signal that oscillates between positive and negative values, and vertically displace it such that either the positive or the negative peaks occur at a prescribed level. The clamper does not restrict the peak-to-peak excursion of the signal, it moves the whole

2219:

was introduced in 1966 and comprises two letters followed by the part code. The first letter represents the semiconductor material used for the component (A = germanium and B = silicon) and the second letter represents the general function of the part (for diodes, A = low-power/signal, B = variable

1182:

ion is left behind in the N-doped region, and a negatively charged dopant ion is created in the P-doped region. As recombination proceeds and more ions are created, an increasing electric field develops through the depletion zone that acts to slow and then finally stop recombination. At this point,

646:

in November 1905). Throughout the vacuum tube era, valve diodes were used in almost all electronics such as radios, televisions, sound systems, and instrumentation. They slowly lost market share beginning in the late 1940s due to selenium rectifier technology and then to semiconductor diodes during

2432:

Since most electronic circuits can be damaged when the polarity of their power supply inputs are reversed, a series diode is sometimes used to protect against such situations. This concept is known by multiple naming variations that mean the same thing: reverse voltage protection, reverse polarity

1028:

type. Non-welded contact construction utilizes the Schottky barrier principle. The metal side is the pointed end of a small diameter wire that is in contact with the semiconductor crystal. In the welded contact type, a small P region is formed in the otherwise N-type crystal around the metal point

1244:

However, if the polarity of the external voltage opposes the built-in potential, recombination can once again proceed, resulting in a substantial electric current through the p–n junction (i.e. substantial numbers of electrons and holes recombine at the junction) that increases exponentially with

678:

crystal detector in 1903 and received a patent for it on 20 November 1906. Other experimenters tried a variety of other minerals as detectors. Semiconductor principles were unknown to the developers of these early rectifiers. During the 1930s understanding of physics advanced and in the mid-1930s

1970:) circuits, allowing tuning circuits, such as those in television receivers, to lock quickly on to the frequency. They also enabled tunable oscillators in the early discrete tuning of radios, where a cheap and stable, but fixed-frequency, crystal oscillator provided the reference frequency for a 1845:

devices and so do not suffer from minority carrier storage problems that slow down many other diodes—so they have a faster reverse recovery than p–n junction diodes. They also tend to have much lower junction capacitance than p–n diodes, which provides for high switching speeds and their use in

1534:

from the diode. During this recovery time, the diode can actually conduct in the reverse direction. This might give rise to a large current in the reverse direction for a short time while the diode is reverse biased. The magnitude of such a reverse current is determined by the operating circuit

612:

observed that a grounded, white-hot metal ball brought in close proximity to an electroscope would discharge a positively charged electroscope, but not a negatively charged electroscope. In 1880, Thomas Edison observed unidirectional current between heated and unheated elements in a bulb, later

1158:

region where there is a large population of holes (vacant places for electrons) with which the electrons "recombine". When a mobile electron recombines with a hole, both hole and electron vanish, leaving behind an immobile positively charged donor (dopant) on the N side and negatively charged

594:. Until the 1950s, vacuum diodes were used more frequently in radios because the early point-contact semiconductor diodes were less stable. In addition, most receiving sets had vacuum tubes for amplification that could easily have the thermionic diodes included in the tube (for example the 1310:, the concept of PIV is not applicable. A Zener diode contains a heavily doped p–n junction allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material, such that the reverse voltage is "clamped" to a known value (called the 439:

C for LEDs), so the user has a guarantee about when a certain amount of current will kick in. At higher currents, the forward voltage drop of the diode increases. For instance, a drop of 1 V to 1.5 V is typical at full rated current for silicon power diodes. (See also:

934:, around 800–1,000 °C (1,470–1,830 °F). A directly heated cathode is made of tungsten wire and is heated by a current passed through it from an external voltage source. An indirectly heated cathode is heated by infrared radiation from a nearby heater that is formed of 1832:

diodes are constructed from metal to semiconductor contact. They have a lower forward voltage drop than p–n junction diodes. Their forward voltage drop at forward currents of about 1 mA is in the range 0.15 V to 0.45 V, which makes them useful in voltage

990:

attracts the electrons from the cathode, so a current of electrons flows through the tube from cathode to plate. When the plate voltage is negative with respect to the cathode, no electrons are emitted by the plate, so no current can pass from the plate to the cathode.

1187: 1606:

These are diodes that conduct in the reverse direction when the reverse bias voltage exceeds the breakdown voltage. These are electrically very similar to Zener diodes (and are often mistakenly called Zener diodes), but break down by a different mechanism: the

1096:), it allows electrons to flow through the depletion region from the N-type side to the P-type side. The junction does not allow the flow of electrons in the opposite direction when the potential is applied in reverse, creating, in a sense, an electrical 647:

the 1960s. Today they are still used in a few high power applications where their ability to withstand transient voltages and their robustness gives them an advantage over semiconductor devices, and in musical instrument and audiophile applications.

2635:. The keyboard controller scans the rows and columns to determine which note the player has pressed. The problem with matrix circuits is that, when several notes are pressed at once, the current can flow backward through the circuit and trigger " 1623:

with the gate shorted to the source, and function like a two-terminal current-limiting analog to the voltage-limiting Zener diode. They allow a current through them to rise to a certain value, and then level off at a specific value. Also called

2178:

system was introduced in the US by EIA/JEDEC (Joint Electron Device Engineering Council) about 1960. Most diodes have a 1-prefix designation (e.g., 1N4003). Among the most popular in this series were: 1N34A/1N270 (germanium signal),

1076:. When the n-type and p-type materials are attached together, a momentary flow of electrons occurs from the n to the p side resulting in a third region between the two where no charge carriers are present. This region is called the 2009:

conveys the general electrical function to the reader. There are alternative symbols for some types of diodes, though the differences are minor. The triangle in the symbols points to the forward direction, i.e. in the direction of

1708:

coating, or combinations of three LEDs of a different color. LEDs can also be used as low-efficiency photodiodes in signal applications. An LED may be paired with a photodiode or phototransistor in the same package, to form an

1895:

and the current is interrupted or reversed, the reverse conduction will cease very abruptly (as in a step waveform). SRDs can, therefore, provide very fast voltage transitions by the very sudden disappearance of the charge

1029:

during manufacture by momentarily passing a relatively large current through the device. Point contact diodes generally exhibit lower capacitance, higher forward resistance and greater reverse leakage than junction diodes.

513:

impurities introduced into the materials during manufacture. These techniques are used to create special-purpose diodes that perform many different functions. For example, to electronically tune radio and TV receivers

1535:(i.e., the series resistance) and the diode is said to be in the storage-phase. In certain real-world cases it is important to consider the losses that are incurred by this non-ideal diode effect. However, when the 3812: 1516:

Following the end of forwarding conduction in a p–n type diode, a reverse current can flow for a short time. The device does not attain its blocking capability until the mobile charge in the junction is depleted.

1221:

If an external voltage is placed across the diode with the same polarity as the built-in potential, the depletion zone continues to act as an insulator, preventing any significant electric current flow (unless

1492: 1864:

Super barrier diodes are rectifier diodes that incorporate the low forward voltage drop of the Schottky diode with the surge-handling capability and low reverse leakage current of a normal p–n junction

49:

Close-up view of a silicon diode. The anode is on the right side; the cathode is on the left side (where it is marked with a black band). The square silicon crystal can be seen between the two leads.

1753:. Peltier heat pumps may be made from semiconductors, though they do not have any rectifying junctions, they use the differing behavior of charge carriers in N and P-type semiconductor to move heat. 2624:

a heavy-duty split-charge diode is used to prevent the higher-charge battery (typically the engine battery) from discharging through the lower-charge battery when the alternator is not running.

1302:

occurs that causes a large increase in current (i.e., a large number of electrons and holes are created at, and move away from the p–n junction) that usually damages the device permanently. The

1080:

because there are no charge carriers (neither electrons nor holes) in it. The diode's terminals are attached to the n-type and p-type regions. The boundary between these two regions, called a

1916:

characteristics. These devices are specially designed for low-voltage stabilization applications requiring a guaranteed voltage over a wide current range and highly stable over temperature.

423:, since a consequence of the steepness of the exponential is that a diode's voltage drop will not significantly exceed the threshold voltage under normal forward bias operating conditions. 1797:, layer, forming a p-type/intrinsic/n-type structure. They are used as radio frequency switches and attenuators. They are also used as large-volume, ionizing-radiation detectors and as 1648:

These are point-contact diodes. The 1N21 series and others are used in mixer and detector applications in radar and microwave receivers. The 1N34A is another example of a crystal diode.

1020:

technology, and are now generally used in the 3 to 30 gigahertz range. Point-contact diodes use a small diameter metal wire in contact with a semiconductor crystal, and are of either

3584: 3301:

Wu, Heng; Wang, Yaojia; Xu, Yuanfeng; Sivakumar, Pranava K.; Pasco, Chris; Filippozzi, Ulderico; Parkin, Stuart S. P.; Zeng, Yu-Jia; McQueen, Tyrel; Ali, Mazhar N. (April 2022).

601:), and vacuum-tube rectifiers and gas-filled rectifiers were capable of handling some high-voltage/high-current rectification tasks better than the semiconductor diodes (such as 1420:

At forward voltages less than the saturation voltage, the voltage versus current characteristic curve of most diodes is not a straight line. The current can be approximated by

3785: 3748: 2927: 485:

A diode's high resistance to current flowing in the reverse direction suddenly drops to a low resistance when the reverse voltage across the diode reaches a value called the

4107: 3809: 2132: 1929:. Their p–n junctions have a much larger cross-sectional area than those of a normal diode, allowing them to conduct large currents to ground without sustaining damage. 3952: 4147: 1700:

may be produced. The first LEDs were red and yellow, and higher-frequency diodes have been developed over time. All LEDs produce incoherent, narrow-spectrum light;

1502:

small compared to the second order term. The desired current component is approximately proportional to the square of the input voltage, so the response is called

2639:" that cause "ghost" notes to play. To avoid triggering unwanted notes, most keyboard matrix circuits have diodes soldered with the switch under each key of the 986:

The alternating voltage to be rectified is applied between the cathode and the plate. When the plate voltage is positive with respect to the cathode, the plate

2343:

the AM radio frequency signal, leaving only the positive peaks of the carrier wave. The audio is then extracted from the rectified carrier wave using a simple

4118: 2615:

Diodes will prevent currents in unintended directions. To supply power to an electrical circuit during a power failure, the circuit can draw current from a

1781:. Multiple photodiodes may be packaged in a single device, either as a linear array or as a two-dimensional array. These arrays should not be confused with 1769:), so they are packaged in materials that allow light to pass, and are usually PIN (the kind of diode most sensitive to light). A photodiode can be used in 1765:

generation. This is typically an undesired effect, so most semiconductors are packaged in light-blocking material. Photodiodes are intended to sense light (

3412: 4013: 2571:

for high-energy particles are used in large numbers. Because of energy loss fluctuations, accurate measurement of the energy deposited is of less use.

2603:

temperature coefficient, typically −2 mV/°C for silicon diodes. The temperature coefficient is approximately constant for temperatures above about 20

3979:"Transistor Museum Construction Projects Point Contact Germanium Western Electric Vintage Historic Semiconductors Photos Alloy Junction Oral History" 679:

researchers at Bell Telephone Laboratories recognized the potential of the crystal detector for application in microwave technology. Researchers at

1590:), much larger than the later silicon diode of the same current ratings would require. The vast majority of all diodes are the p–n diodes found in 469:

Since a diode's forward-voltage drop varies only a little with the current, and is more so a function of temperature, this effect can be used as a

1745:

This term is used both for conventional p–n diodes used to monitor temperature because of their varying forward voltage with temperature, and for

4256: 4096: 3646: 1539:

of the current is not so severe (e.g. Line frequency) the effect can be safely ignored. For most applications, the effect is also negligible for

2075: 578:

diode. The filament itself may be the cathode, or more commonly (as shown here) used to heat a separate metal tube which serves as the cathode.

458:" around this threshold when viewed on a linear scale, the knee is an illusion that depends on the scale of y-axis representing current. In a 179:. The discovery of asymmetric electrical conduction across the contact between a crystalline mineral and a metal was made by German physicist 4181: 3735: 3848: 2713: 2709: 3504: 3581: 3268: 3706: 3601:

Elhami Khorasani, A.; Griswold, M.; Alford, T. L. (2014). "Gate-Controlled Reverse Recovery for Characterization of LDMOS Body Diode".

3789: 3772: 3752: 2152:

There are a number of common, standard and manufacturer-driven numbering and coding schemes for diodes; the two most common being the

5130: 2931: 1423: 3174: 2906: 3546: 4771: 2358:

In microwave and millimeter wave technology, beginning in the 1930s, researchers improved and miniaturized the crystal detector.

1982:

These can be made to conduct in reverse bias (backward), and are correctly termed reverse breakdown diodes. This effect called

334:, above which there is significant current and below which there is almost no current, which depends on a diode's composition: 4129: 3286: 2836: 150: 4158: 3956: 1891:

relates to the form of the reverse recovery characteristic of these devices. After a forward current has been passing in an

4688: 2245: 3465: 4469: 4249: 4205: 2081: 1919: 17: 590:(semiconductor) diodes were developed separately, at approximately the same time, in the early 1900s, as radio receiver 4091: 2992: 2584: 1562: 1405: 1284: 1257: 1131: 454:

is really more gradual than this simple on–off action. Although an exponential function may appear to have a definite "

451: 315: 172: 3251: 1520:

The effect can be significant when switching large currents very quickly. A certain amount of "reverse recovery time"

1150:

between differing semiconductors. When a p–n junction is first created, conduction-band (mobile) electrons from the N-

466:

for current and a linear scale for voltage), the diode's exponential curve instead appears more like a straight line.

4452: 4348: 3837: 3198: 2890: 2863: 2335:

article. In summary, an AM signal consists of alternating positive and negative peaks of a radio carrier wave, whose

406: 3483: 4592: 4319: 1656:

These are similar to tunnel diodes in that they are made of materials such as GaAs or InP that exhibit a region of

1119: 4192: 1527:(on the order of tens of nanoseconds to a few microseconds) may be required to remove the reverse recovery charge 4640: 4439: 812: 270:

The most common function of a diode is to allow an electric current to pass in one direction (called the diode's

5304: 4242: 3419: 2153: 4211: 3896:

Dowdey, J. E.; Travis, C. M. (1964). "An Analysis of Steady-State Nuclear Radiation Damage of Tunnel Diodes".

4021: 2636: 2200: 2184: 1971: 1841:, although their reverse leakage current is in general higher than that of other diodes. Schottky diodes are 609: 286:. This unidirectional behavior can convert alternating current (AC) to direct current (DC), a process called 2407:

are a common example, where the diode, which rectifies the AC into DC, provides better performance than the

4671: 4423: 2620: 2470:

also incorporate diodes on the connection pins to prevent external voltages from damaging their sensitive

1925:

These are avalanche diodes designed specifically to protect other semiconductor devices from high-voltage

1805:, as their central layer can withstand high voltages. Furthermore, the PIN structure can be found in many 5294: 4475: 4412: 2679:

This simple diode clamp will clamp the negative peaks of the incoming waveform to the common rail voltage

1546:

The reverse current ceases abruptly when the stored charge is depleted; this abrupt stop is exploited in

1390: 1320:: For a bias between breakdown and 0 V, the reverse current is very small and asymptotically approaches - 287: 1003:

Close-up of an EFD108 germanium point-contact diode in DO7 glass package, showing the sharp metal wire (

5135: 4682: 2770: 2515: 2417: 1847: 1806: 1746: 790: 671: 4217: 3643: 2599:

term is more significant than the variation in the thermal voltage term. Most diodes therefore have a

553: 4889: 4603: 4446: 4331: 2631:. To reduce the amount of wiring needed in electronic musical keyboards, these instruments often use 1660:. With appropriate biasing, dipole domains form and travel across the diode, allowing high frequency 1587: 587: 3999: 3693: 3062: 2952: 2661:

Diodes can be used to limit the positive or negative excursion of a signal to a prescribed voltage.

1558: 4898: 4756: 4608: 4464: 4223: 4061: 2583:

measuring device, since the forward voltage drop across the diode depends on temperature, as in a

885:

The symbol for an indirectly heated vacuum tube diode. From top to bottom, the element names are:

4909: 4629: 4428: 3154: 2632: 2507: 1926: 1701: 1495: 1409: 1376: 1349: 1164: 1134:. The shape of the curve is determined by the transport of charge carriers through the so-called 614: 565: 506: 2032: 1913: 1060:

are also used. Impurities are added to it to create a region on one side that contains negative

5078: 4645: 4510: 4486: 2568: 2188: 2061: 1750: 1614: 1223: 1199: 1175: 510: 146: 131: 31: 3374: 3188: 3043: 2853: 1287:

can be approximated by four operating regions. From lower to higher bias voltages, these are:

5147: 5099: 4920: 4736: 4651: 4582: 4418: 3680: 3272: 3065:

Owen W. Richardson, "Thermionic phenomena and the laws which govern them", December 12, 1929,

2982: 2880: 2826: 2729: 2684: 2670: 2656: 2616: 2511: 2408: 2298:, also known as an optical diode, that allows light to only pass in one direction. It uses a 1967: 1834: 1782: 1778: 1734: 1664: 749: 659: 118:

into which electrons will flow when the diode is conducting. Electron flow is the reverse of

3664: 1688:

when they recombine with the majority carrier on the other side. Depending on the material,

441: 5221: 4965: 4860: 4634: 4527: 4381: 4342: 4273: 4265: 3905: 3870: 3610: 3525: 3324: 3099: 2765: 2628: 2412: 2328: 2090: 2038: 2011: 1670: 1402: 1345: 1295: 1073: 1065: 962: 741: 651: 625: 538: 448: 399: 250: 176: 169: 134: 119: 1239: 1216: 8: 4941: 4849: 4741: 4577: 4554: 3090:

Redhead, P. A. (1998-05-01). "The birth of electronics: Thermionic emission and vacuum".

2785: 2500: 2496: 2467: 2396: 2180: 2118: 1942: 1892: 1882: 1774: 1657: 1594: 1547: 1504: 1299: 954: 667: 598: 542: 226: 107: 4055: 3909: 3874: 3614: 3328: 3103: 2241:

GD-series germanium diodes (e.g., GD9) – this is a very old coding system

1159:

acceptor (dopant) on the P side. The region around the p–n junction becomes depleted of

505:

A semiconductor diode's current–voltage characteristic can be tailored by selecting the

310: 5246: 5106: 4814: 4781: 4597: 4481: 4459: 3626: 3356: 3314: 3025: 2805: 2757: 2596: 2420: 2047: 1829: 1085: 999: 602: 246: 3882: 5241: 5162: 5053: 5005: 4834: 4761: 4723: 4087: 3833: 3360: 3348: 3340: 3302: 3194: 3115: 2988: 2886: 2859: 2832: 2550: 2404: 2344: 2320: 2000: 1963: 1946: 1802: 1203: 1122:

rather than a p–n junction, which reduces capacitance and increases switching speed.

987: 872: 486: 474: 463: 279: 254: 81: 58: 3029: 2220:

capacitance, X = multiplier, Y = rectifier and Z = voltage reference); for example:

218:, in which electrons can flow in only one direction, from the cathode the to plate. 4957: 4904: 4731: 4370: 3913: 3878: 3668: 3630: 3618: 3332: 3107: 3017: 2800: 2701: 2640: 2553:

to detect radiation. A single particle of radiation, with thousands or millions of

2451: 2332: 2295: 2216: 2138:

Typical diode packages in same alignment as diode symbol. The thin bar depicts the

1855: 1842: 1681: 1398: 1394: 1191: 1147: 1142: 1136: 1081: 1077: 1057: 1017: 904: 684: 663: 633: 591: 388: 188: 165: 138: 103: 4766: 3978: 3213:

Pickard, G. W., "Means for receiving intelligence communicated by electric waves"

2595:

temperature coefficient (at a constant current), but usually the variation of the

2227:

BA-series silicon low-power/signal diodes (e.g., BAT18 silicon RF switching diode)

983:

The plate, not being heated, does not emit electrons; but is able to absorb them.

5299: 5234: 5167: 5020: 4751: 4661: 4505: 3816: 3719: 3650: 3588: 2775: 2644: 2607:. Some graphs are given for 1N400x series, and CY7 cryogenic temperature sensor. 2558: 2474:. Specialized diodes are used to protect from over-voltages at higher power (see 2299: 2104: 2006: 1983: 1851: 1730: 1601: 1569:

Normal (p–n) diodes, which operate as described above, are usually made of doped

1353: 1303: 1195: 1171: 980:, meaning that they more readily emit electrons than would the uncoated cathode. 916: 711: 629: 519: 494: 455: 215: 180: 142: 4392: 3446: 3395: 2331:(AM) radio broadcasts. The history of this discovery is treated in depth in the 2294:

In optics, an equivalent device for the diode but with laser light would be the

907:

device consisting of a sealed, evacuated glass or metal envelope containing two

5209: 4990: 4980: 4746: 4549: 4041: 3810:

Fast Recovery Epitaxial Diodes (FRED) Characteristics – Applications – Examples

3336: 3047:

The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science

2697: 2400: 2237:

Other common numbering/coding systems (generally manufacturer-driven) include:

2067: 1824: 1762: 1722: 1677: 1540: 1279:. The leveling off region which occurs at larger forward currents is not shown. 1198:

decreases as voltage increases. Both p and n junctions are doped at a 1e15/cm3

1160: 1115: 1109: 1061: 715: 632:

and former Edison employee) realized that the Edison effect could be used as a

618: 515: 352: 299: 238: 230: 4116:; 1st Ed; Rufus Turner; Howard Sams & Co; 128 pages; 1963; LCCN 63-13904. 3917: 2696:

The diode's exponential current–voltage relationship is exploited to evaluate

732:

At the time of their invention, asymmetrical conduction devices were known as

654:

discovered the "unilateral conduction" across a contact between a metal and a

5288: 5271: 5094: 5010: 4829: 4656: 4624: 3622: 3344: 3215: 3133: 3119: 3076: 2708:

using analog voltage signals (see Operational amplifier applications §§

2554: 2527: 2463: 2462:

that would otherwise occur. (A diode used in such an application is called a

2459: 2443: 2020: 1798: 1766: 1740: 1710: 1578: 1069: 1049: 1043: 977: 642: 637: 459: 363: 242: 161: 157: 3931: 3021: 1016:

Point-contact diodes were developed starting in the 1930s, out of the early

5152: 5140: 5028: 4995: 4824: 4809: 4376: 3352: 2790: 2315: 2212: 2161: 2096: 1932: 1837:

and prevention of transistor saturation. They can also be used as low loss

1705: 1329: 1084:, is where the action of the diode takes place. When a sufficiently higher 808: 534: 526: 295: 234: 2549:

and single and multiple bit errors. This effect is sometimes exploited by

2230:

BY-series silicon rectifier diodes (e.g., BY127 1250V, 1A rectifier diode)

5194: 4936: 4885: 4791: 4776: 4559: 4521: 3568: 3235:"Development of Silicon Crystal Rectifiers for Microwave Radar Receivers" 3234: 3092:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

2580: 2535: 2492: 2487: 2471: 2352: 2124: 1977: 1716: 1697: 1356:" appears, but no clear threshold voltage is visible on a semi-log graph. 1307: 1097: 1068:, and a region on the other side that contains positive charge carriers ( 927:. If indirect heating is employed, a heater is included in the envelope. 912: 617:, and was granted a patent on application of the phenomenon for use in a 583: 575: 522: 490: 283: 203: 111: 4234: 1226:

are actively being created in the junction by, for instance, light; see

5266: 5256: 5189: 5063: 5033: 5000: 4975: 4970: 4947: 4819: 4799: 4677: 4539: 4516: 4402: 4304: 4299: 4294: 2780: 2643:. The same principle is also used for the switch matrix in solid-state 2539: 2503: 2348: 2267: 2053: 1959: 1770: 1756: 1689: 1651: 1227: 938:

wire and supplied with current provided by an external voltage source.

848: 793: 530: 435:) for a specified current and temperature (e.g. 20 mA and 25 424: 291: 1202:

level, leading to built-in potential of ~0.59V. Observe the different

662:

was the first to use a crystal for detecting radio waves in 1894. The

153:

in one direction and high (ideally infinite) resistance in the other.

5229: 5073: 5068: 5058: 4985: 4865: 4699: 4694: 4619: 4544: 3111: 2705: 2562: 2392: 2379: 2340: 2336: 2272: 2262: 2174: 1936: 1899: 1838: 1818: 1788: 1661: 1574: 1536: 1336:

I–V (logarithmic current vs. linear voltage) graph of various diodes.

1253: 1206:

for conduction band and valence band in n and p regions (red curves).

1053: 970: 908: 836: 733: 727: 680: 621: 570: 546: 222: 207: 192: 3672: 3644:

Inclusion of Switching Loss in the Averaged Equivalent Circuit Model

2384: 2339:

or envelope is proportional to the original audio signal. The diode

2203:

system has all semiconductor diode designations starting with "1S".

5251: 5199: 5179: 5157: 5043: 5038: 4926: 4915: 4844: 4614: 3319: 3303:"The field-free Josephson diode in a van der Waals heterostructure" 2795: 2751: 2688:

signal up or down so as to place the peaks at the reference level.

2447: 2288: 1987: 1875: 1693: 1597:, which include two diodes per pin and many other internal diodes. 1582: 1333: 950: 935: 931: 384: 5111: 5048: 4870: 4855: 4709: 4666: 4314: 3008:

Guarnieri, M. (2011). "Trailblazers in Solid-State Electronics".

2249: 2233:

BZ-series silicon Zener diodes (e.g., BZY88C4V7 4.7V Zener diode)

2139: 2110: 1952: 1570: 1093: 864: 781: 777: 737: 675: 655: 290:. As rectifiers, diodes can be used for such tasks as extracting 211: 184: 115: 74: 44: 5184: 4875: 4839: 4804: 4364: 4336: 4309: 4284: 2604: 2587:. From the Shockley ideal diode equation given above, it might 2531: 1814: 1685: 1179: 1155: 1151: 966: 880: 785: 773: 692: 114:. In most diodes, a white or black painted band identifies the 89: 3600: 1912:

refers to a special type of diodes featuring extremely stable

1487:{\displaystyle I=I_{\text{S}}e^{V_{\text{D}}/(nV_{\text{T}})}} 1130:

A semiconductor diode's behavior in a circuit is given by its

949:

The operating temperature of the cathode causes it to release

830: 415:

This voltage may loosely be referred to simply as the diode's

5261: 5172: 4931: 4704: 4359: 4354: 3849:

Protecting Low Current Loads in Harsh Electrical Environments

2675: 2546: 2543: 2455: 2278: 2157: 2005:

The symbol used to represent a particular type of diode in a

1726: 1089: 973: 958: 860: 595: 274:

direction), while blocking it in the opposite direction (the

70: 4105:; 1st Ed; Bernard Babani; Krisson Printing; 48 pages; 1972. 4000:"Optical Isolator – an overview | ScienceDirect Topics" 2395:

are constructed from diodes, where they are used to convert

2370:

are used in radar, microwave and millimeter wave detectors.

1577:. Before the development of silicon power rectifier diodes, 941: 5204: 4587: 4533: 4434: 4387: 4325: 4103:

38 Practical Tested Diode Circuits For the Home Constructor

3861:

Jonscher, A. K. (1961). "The physics of the tunnel diode".

3507:

Navy Electricity and Electronics Training Series, Module 11

2855:

Analog Electronics: Circuits, Systems and Signal Processing

2458:

circuits to de-energize coils rapidly without the damaging

2283: 2244:

OA-series germanium diodes (e.g., OA47) – a

1868: 1810: 1620: 1591: 1408:

of diodes in moderate forward or reverse bias. The article

1183:

there is a "built-in" potential across the depletion zone.

377: 338:

Forward threshold voltage for various semiconductor diodes

3895: 2828:

Electronic Circuits: Fundamentals and Applications, 3rd Ed

1186: 2224:

AA-series germanium low-power/signal diodes (e.g., AA119)

688: 98: 4057:

The Principles of Electric Wave Telegraphy and Telephony

2691: 1306:

is deliberately designed for use in that manner. In the

636:. Fleming patented the first true thermionic diode, the 4179:; 2nd Ed; Federal Telephone and Radio; 80 pages; 1953. 2851: 1352:. When plotted using a linear current scale, a smooth " 1170:

However, the width of the depletion region (called the

835:

A high power vacuum diode used in radio equipment as a

696: 4208:; 1989; National Semiconductor (now Texas Instruments) 4127:; 2nd Ed; Sylvania Electric Products; 47 pages; 1949. 3953:"Introduction dates of common transistors and diodes?" 2510:

can be achieved by adding an active device to provide

552:

Diodes, both vacuum and semiconductor, can be used as

2878: 1426: 4053: 3044:"On a relation between heat and static electricity," 2747: 2327:

The first use for the diode was the demodulation of

4086:; 1st Ed; R.N. Soar; Babani Press; 62 pages; 1977; 493:) or to protect circuits from high voltage surges ( 322:A diode's behavior is often simplified as having a 3558: 3556: 2885:. London: Cambridge University Press. p. 44. 1486: 3851:. Digikey.com (2009-05-27). Retrieved 2013-12-19. 3775:. Digikey.com (2009-05-27). Retrieved 2013-12-19. 3738:. Digikey.com (2009-05-27). Retrieved 2013-12-19. 3709:. Digikey.com (2009-05-27). Retrieved 2013-12-19. 3300: 3193:. US: John Wiley and Sons. pp. 94, 291–308. 2475: 1729:can be formed. Laser diodes are commonly used in 1125: 811:, to differentiate them from diodes intended for 168:connected to two electrical terminals. It has an 102:Various semiconductor diodes. Left: A four-diode 5286: 2852:Crecraft, Filip Mincic; Stephen Gergely (2002). 4156:; 1st Ed; Bob Dale; Motorola; 213 pages; 1966. 3860: 3553: 3505:"U. S. Navy Center for Surface Combat Systems, 3229: 3227: 3225: 2907:"Physical Explanation – General Semiconductors" 2521: 2147: 1684:, charge carriers that cross the junction emit 1553: 1260:of a p–n junction diode showing three regions: 160:diode, the most commonly used type today, is a 3520: 3518: 3155:"Ueber die Stromleitung durch Schwefelmetalle" 2928:"The Constituents of Semiconductor Components" 2542:and other sources of ionizing radiation cause 1725:formed by polishing the parallel end faces, a 1550:for the generation of extremely short pulses. 640:, in Britain on 16 November 1904 (followed by 265: 4250: 3377:The Telegraphic Journal and Electrical Review 2987:. Butterworth-Heinemann. pp. 8.14–8.22. 2984:Electronics Engineer's Reference Book, 4th Ed 2427: 1721:When an LED-like structure is contained in a 1048:A p–n junction diode is made of a crystal of 470: 407:Light-emitting diode physics § Materials 257:and status indicators on electronic devices. 187:, but other semiconducting materials such as 4167:; F.G. Spreadbury; D. Van Nostrand Co; 1962. 3291:, Sylvania Electric Products Co., 1949, p. 9 3222: 3157:(On current conduction in metal sulphides), 2433:protection, and reverse battery protection. 1846:high-speed circuitry and RF devices such as 699:intensively developed point-contact diodes ( 3582:Diode reverse recovery in a boost converter 3515: 2574: 489:. This effect is used to regulate voltage ( 4257: 4243: 4190:; 1st Ed; Sarkes Tarzian; 80 pages; 1950. 4173:; International Rectifier; 96 pages; 1960. 3955:. EDAboard.com. 2010-06-10. Archived from 3562: 3241:, Vol. 24, No. 1, January 1947. pp. 1 - 30 2436: 1761:All semiconductors are subject to optical 1511: 1370: 666:was developed into a practical device for 566:Vacuum tube § History and development 541:). Tunnel, Gunn and IMPATT diodes exhibit 4264: 3547:"Microsemi Corporation Schottky web page" 3318: 3007: 2359: 1941:These have a region of operation showing 1643: 1294:: At very large reverse bias, beyond the 1178:recombination made, a positively charged 945:A vacuum tube containing two power diodes 4214:; 1985; Fairchild (now ON Semiconductor) 2976: 2974: 2972: 2674: 2388:Schematic of basic AC-to-DC power supply 2383: 2314: 1557: 1415: 1328: 1252: 1185: 1007:) that forms the semiconductor junction. 998: 940: 569: 309: 183:in 1874. Today, most diodes are made of 97: 4226:; 1965; Motorola (now ON Semiconductor) 3662: 3379:, Vol. XIX, September 10, 1886, p. 252" 3375:"W. H. Preece, "Multiplex Telegraphy", 3089: 2872: 2845: 2526:In addition to light, mentioned above, 2424:to convert AC into higher DC voltages. 1793:A PIN diode has a central un-doped, or 1272:biased. The exponential's "knee" is at 1011: 994: 930:In operation, the cathode is heated to 442:Rectifier § Rectifier voltage drop 164:piece of semiconductor material with a 14: 5287: 3186: 3180: 2980: 2879:Horowitz, Paul; Winfield Hill (1989). 2858:. Butterworth-Heinemann. p. 110. 2824: 1704:are actually a blue LED with a yellow 1174:) cannot grow without limit. For each 175:. Semiconductor diodes were the first 4238: 4145:; On Semiconductor; 270 pages; 2001. 4014:"1N400x Diode Family Forward Voltage" 3460: 3458: 3456: 3441: 3439: 3407: 3405: 3390: 3388: 3074:Edison, Thomas A. "Electrical Meter" 2969: 2692:Computing exponentials and logarithms 2415:. Similarly, diodes are also used in 2310: 2275:or silicon controlled rectifier (SCR) 2172:The standardized 1N-series numbering 1958:These are used as voltage-controlled 1037: 818: 427:typically quote a typical or maximum 221:Among many uses, diodes are found in 4689:Three-dimensional integrated circuit 4220:; 1982; SGS (now STMicroelectronics) 3898:IEEE Transactions on Nuclear Science 3563:Giacoletto, Lawrence Joseph (1977). 2367: 1644:Crystal rectifiers or crystal diodes 1248: 1194:diode in low forward bias mode. The 1114:Another type of junction diode, the 771:however was already in use, as were 605:) that were available at that time. 480: 305: 4470:Programmable unijunction transistor 4060:. London: Longmans, Green. p. 3976: 3830:Modern Semiconductor Device Physics 2650: 2610: 2373: 2347:and fed into an audio amplifier or 2082:Transient-voltage-suppression diode 1920:Transient voltage suppression diode 807:usually applies to diodes used for 249:. A common variant of a diode is a 24: 4371:Multi-gate field-effect transistor 4072: 3863:British Journal of Applied Physics 3453: 3436: 3402: 3385: 3042:Guthrie, Frederick (October 1873) 2724:Diodes are usually referred to as 2585:silicon bandgap temperature sensor 2351:, which generates sound waves via 2256: 2187:(silicon 1A power rectifier), and 1994: 1751:thermoelectric heating and cooling 1406:current–voltage (I–V) relationship 1032: 953:into the vacuum, a process called 500: 25: 5316: 4349:Insulated-gate bipolar transistor 4230: 3239:The Bell System Technical Journal 1103: 447:However, a semiconductor diode's 260: 27:Two-terminal electronic component 4593:Heterostructure barrier varactor 4320:Chemical field-effect transistor 4188:S.T. Selenium Rectifier Handbook 4177:F.T. Selenium Rectifier Handbook 3486:Asymmetrically Conductive Device 3447:"Massachusetts Bay Technologies" 2750: 2719: 2131: 2117: 2103: 2089: 2074: 2060: 2046: 2031: 2019: 1658:negative differential resistance 1366:in series with a fixed resistor. 1298:(PIV), a process called reverse 879: 829: 177:semiconductor electronic devices 88: 43: 4641:Mixed-signal integrated circuit 4143:Rectifier Applications Handbook 4047: 4035: 4006: 3992: 3970: 3945: 3924: 3889: 3854: 3842: 3822: 3803: 3778: 3766: 3741: 3729: 3712: 3700: 3665:"Tunnel Diode Circuit Analysis" 3656: 3637: 3594: 3575: 3565:Electronics Designers' Handbook 3539: 3497: 3476: 3367: 3294: 3279: 3261: 3244: 3207: 3168: 3147: 3126: 3083: 3068: 3056: 2305: 2206: 1344:: The current–voltage curve is 1233: 1210: 867:, heater (if indirectly heated) 3819:. (PDF). Retrieved 2013-12-19. 3470:, New York: McGraw-Hill, 1948" 3466:"H. C. Torrey, C. A. Whitmer, 3269:"Sylvania 1949 data book page" 3036: 3001: 2945: 2920: 2899: 2882:The Art of Electronics, 2nd Ed 2818: 2481: 2191:(silicon 3A power rectifier). 1962:. These are important in PLL ( 1801:. PIN diodes are also used in 1479: 1463: 1285:current–voltage characteristic 1258:Current–voltage characteristic 1132:current–voltage characteristic 1126:Current–voltage characteristic 1088:is applied to the P side (the 452:current–voltage characteristic 173:current–voltage characteristic 13: 1: 4054:John Ambrose Fleming (1919). 4042:Cryogenic Temperature Sensors 3653:. ECEN5797. ecee.colorado.edu 3591:. ECEN5817. ecee.colorado.edu 3413:"Advanced Semiconductor, Inc" 3159:Annalen der Physik und Chemie 2811: 2732:. Sometimes the abbreviation 2530:diodes are sensitive to more 2201:JIS semiconductor designation 1972:voltage-controlled oscillator 1383:Shockley ideal diode equation 1240:p–n diode § Forward bias 1217:p–n diode § Reverse bias 957:. The cathode is coated with 405:1.6 V (red) to 4 V (violet). 149:). It has low (ideally zero) 4672:Silicon controlled rectifier 4534:Organic light-emitting diode 4424:Diffused junction transistor 4125:40 Uses for Germanium Diodes 3788:. 2010-05-25. Archived from 3751:. 2010-05-25. Archived from 3736:Classification of components 3663:Roddick, R.G. (1962-10-01). 3603:IEEE Electron Device Letters 3288:40 Uses for Germanium Diodes 2930:. 2010-05-25. Archived from 2629:electronic musical keyboards 2621:uninterruptible power supply 2522:Ionizing radiation detectors 2167: 2148:Numbering and coding schemes 1554:Types of semiconductor diode 1120:metal–semiconductor junction 767:), meaning 'path'. The word 721: 7: 4476:Static induction transistor 4413:Bipolar junction transistor 4365:MOS field-effect transistor 4337:Fin field-effect transistor 3883:10.1088/0508-3443/12/12/304 3526:"Skyworks Solutions, Inc., 2743: 1807:power semiconductor devices 1733:devices and for high speed 1634:diode-connected transistors 1391:bipolar junction transistor 714:effect without an external 628:(scientific adviser to the 473:or as a somewhat imprecise 266:Unidirectional current flow 241:, and can even be used for 10: 5321: 4683:Static induction thyristor 4154:Silicon Rectifier Handbook 3337:10.1038/s41586-022-04504-8 3252:"Germanium Crystal Diodes" 2771:Diode-connected transistor 2668: 2664: 2654: 2597:reverse saturation current 2485: 2428:Reverse-voltage protection 2377: 2160:standard and the European 1998: 1990:, a registered trademark). 1848:switched-mode power supply 1565:of several types of diodes 1374: 1237: 1214: 1154:region diffuse into the P- 1107: 1092:) than to the N side (the 1041: 725: 672:Greenleaf Whittier Pickard 650:In 1874, German scientist 563: 559: 346:Forward threshold voltage 29: 5220: 5120: 5087: 5019: 4956: 4884: 4852:(Hexode, Heptode, Octode) 4790: 4722: 4604:Hybrid integrated circuit 4568: 4496: 4447:Light-emitting transistor 4401: 4283: 4272: 3981:. Semiconductormuseum.com 3918:10.1109/TNS2.1964.4315475 3528:Mixer and Detector Diodes 3233:Scaff, J. H., Ohl, R. S. 3187:Sarkar, Tapan K. (2006). 2831:. Routledge. p. 81. 2579:A diode can be used as a 1676:In a diode formed from a 1638:current-regulating diodes 1395:William Bradford Shockley 878: 871: 854: 844: 828: 537:), and to produce light ( 324:forward threshold voltage 87: 80: 64: 54: 42: 4899:Backward-wave oscillator 4609:Light emitting capacitor 4465:Point-contact transistor 4435:Junction Gate FET (JFET) 4165:Electronic Rectification 4078:Historical circuit books 3786:"Physics and Technology" 3749:"Component Construction" 3707:Current regulator diodes 3623:10.1109/LED.2014.2353301 3488:, U.S. patent 2,704,818" 3153:Braun, Ferdinand (1874) 3134:"Road to the Transistor" 3080:Issue date: Oct 21, 1884 2957:Adafruit Learning System 2633:keyboard matrix circuits 2627:Diodes are also used in 2575:Temperature measurements 1904:forward reference diodes 919:. The cathode is either 903:A thermionic diode is a 624:. About 20 years later, 549:and switching circuits. 110:. On the far right is a 4910:Crossed-field amplifier 4429:Field-effect transistor 4114:Diode Circuits Handbook 4018:cliftonlaboratories.com 3258:, February 1946, p. 118 3219:Issued: August 30, 1906 3022:10.1109/MIE.2011.943016 2591:that the voltage has a 2569:Semiconductor detectors 2508:Functional completeness 2437:Over-voltage protection 2302:as the main component. 1680:semiconductor, such as 1630:constant-current diodes 1615:Constant-current diodes 1512:Reverse-recovery effect 1496:Shockley diode equation 1410:Shockley diode equation 1377:Shockley diode equation 1371:Shockley diode equation 1350:Shockley diode equation 1163:and thus behaves as an 1064:(electrons), called an 1052:, usually silicon, but 856:Pin configuration 507:semiconductor materials 66:Pin configuration 5079:Voltage-regulator tube 4646:MOS integrated circuit 4511:Constant-current diode 4487:Unijunction transistor 4224:Semiconductor Databook 4137:Historical periodicals 4084:50 Simple LED Circuits 3832:, Wiley Interscience, 3773:Component Construction 3688:Cite journal requires 3509:, 2012, pp. 2-81–2-83" 2981:Turner, L. W. (2015). 2680: 2516:diode–transistor logic 2399:(AC) electricity into 2389: 2324: 2194: 1874:As a dopant, gold (or 1783:charge-coupled devices 1779:optical communications 1566: 1563:Current–voltage curves 1488: 1337: 1280: 1207: 1008: 946: 759:), meaning 'two', and 579: 319: 123: 32:Diode (disambiguation) 5305:Semiconductor devices 5148:Electrolytic detector 4921:Inductive output tube 4737:Low-dropout regulator 4652:Organic semiconductor 4583:Printed circuit board 4419:Darlington transistor 4266:Electronic components 3010:IEEE Ind. Electron. M 2825:Tooley, Mike (2013). 2678: 2671:Clamper (electronics) 2657:Clipper (electronics) 2565:to electron showers. 2387: 2318: 1968:frequency-locked loop 1835:clamping applications 1735:optical communication 1692:(or colors) from the 1671:Light-emitting diodes 1561: 1489: 1416:Small-signal behavior 1332: 1256: 1189: 1002: 963:alkaline earth metals 944: 712:superconducting diode 660:Jagadish Chandra Bose 573: 564:Further information: 554:shot-noise generators 545:, which is useful in 539:light-emitting diodes 409:has a complete list. 400:Light-emitting diodes 316:current–voltage curve 313: 101: 4966:Beam deflection tube 4635:Metal oxide varistor 4528:Light-emitting diode 4382:Thin-film transistor 4343:Floating-gate MOSFET 4200:Historical databooks 4171:Zener Diode Handbook 3177:. chem.ch.huji.ac.il 3175:Karl Ferdinand Braun 2781:Fast/ultrafast diode 2766:Active rectification 2493:Diode–resistor logic 2360:Point contact diodes 2321:envelope demodulator 2039:Light-emitting diode 2012:conventional current 1883:step recovery diodes 1861:Super barrier diodes 1548:step recovery diodes 1494:as explained in the 1424: 1364:Shockley ideal diode 1348:, approximating the 1296:peak inverse voltage 1086:electrical potential 1074:p-type semiconductor 1066:n-type semiconductor 1012:Point-contact diodes 995:Semiconductor diodes 799:Although all diodes 742:William Henry Eccles 736:. In 1919, the year 652:Karl Ferdinand Braun 626:John Ambrose Fleming 417:forward voltage drop 251:light-emitting diode 135:electronic component 120:conventional current 30:For other uses, see 4942:Traveling-wave tube 4742:Switching regulator 4578:Printed electronics 4555:Step recovery diode 4332:Depletion-load NMOS 3959:on October 11, 2007 3910:1964ITNS...11...55D 3875:1961BJAP...12..654J 3615:2014IEDL...35.1079E 3329:2022Natur.604..653W 3216:U.S. patent 836,531 3190:History of wireless 3104:1998JVSTA..16.1394R 3077:U.S. patent 307,030 3063:1928 Nobel Lecture: 2786:Flame rectification 2468:integrated circuits 2421:voltage multipliers 2397:alternating current 2329:amplitude modulated 1943:negative resistance 1619:These are actually 1595:integrated circuits 1224:electron–hole pairs 1146:that exists at the 1118:, is formed from a 976:. These have a low 955:thermionic emission 825: 710:In 2022, the first 668:wireless telegraphy 658:. Indian scientist 643:U.S. patent 803,684 603:selenium rectifiers 599:double diode triode 543:negative resistance 339: 318:of 4 common diodes. 253:, which is used as 247:temperature sensors 227:alternating current 108:1N4148 signal diode 39: 18:Semiconductor diode 5295:1904 introductions 5247:Crystal oscillator 5107:Variable capacitor 4782:Switched capacitor 4724:Voltage regulators 4598:Integrated circuit 4482:Tetrode transistor 4460:Pentode transistor 4453:Organic LET (OLET) 4440:Organic FET (OFET) 3828:Sze, S. M. (1998) 3815:2009-03-26 at the 3649:2011-10-07 at the 3587:2011-10-07 at the 3571:. pp. 24–138. 3468:Crystal Rectifiers 2806:Small-signal model 2758:Electronics portal 2714:Logarithmic output 2710:Exponential output 2681: 2551:particle detectors 2390: 2325: 2311:Radio demodulation 2215:coding system for 2183:(silicon signal), 1955:or varactor diodes 1747:Peltier heat pumps 1586:the diode's metal 1567: 1484: 1412:provides details. 1338: 1281: 1208: 1204:quasi Fermi levels 1176:electron–hole pair 1038:p–n junction diode 1009: 947: 823: 819:Vacuum tube diodes 701:crystal rectifiers 580: 471:temperature sensor 337: 320: 124: 106:. Next to it is a 37: 5282: 5281: 5242:Ceramic resonator 5054:Mercury-arc valve 5006:Video camera tube 4958:Cathode-ray tubes 4718: 4717: 4326:Complementary MOS 4218:Discrete Databook 4212:Discrete Databook 4206:Discrete Databook 4195: 4184: 4161: 4150: 4132: 4121: 4110: 4099: 3313:(7907): 653–656. 3250:Cornelius, E. C. 2838:978-1-136-40731-4 2738:crystal rectifier 2403:(DC). Automotive 2217:active components 2001:Electronic symbol 1964:phase-locked loop 1947:quantum tunneling 1803:power electronics 1476: 1455: 1440: 1389:(named after the 1249:Operating regions 988:electrostatically 921:indirectly heated 901: 900: 873:Electronic symbol 674:, who invented a 610:Frederick Guthrie 487:breakdown voltage 481:Reverse breakdown 475:voltage reference 464:logarithmic scale 413: 412: 357:0.15 V to 0.45 V 306:Threshold voltage 280:hydraulic analogy 255:electric lighting 96: 95: 82:Electronic symbol 16:(Redirected from 5312: 5136:electrical power 5021:Gas-filled tubes 4905:Cavity magnetron 4732:Linear regulator 4281: 4280: 4259: 4252: 4245: 4236: 4235: 4191: 4180: 4157: 4146: 4128: 4117: 4106: 4095: 4066: 4065: 4051: 4045: 4039: 4033: 4032: 4030: 4029: 4020:. Archived from 4010: 4004: 4003: 3996: 3990: 3989: 3987: 3986: 3974: 3968: 3967: 3965: 3964: 3949: 3943: 3942: 3940: 3939: 3928: 3922: 3921: 3893: 3887: 3886: 3858: 3852: 3846: 3840: 3826: 3820: 3807: 3801: 3800: 3798: 3797: 3782: 3776: 3770: 3764: 3763: 3761: 3760: 3745: 3739: 3733: 3727: 3726: 3724: 3720:"NTE data sheet" 3716: 3710: 3704: 3698: 3697: 3691: 3686: 3684: 3676: 3660: 3654: 3641: 3635: 3634: 3598: 3592: 3579: 3573: 3572: 3560: 3551: 3550: 3543: 3537: 3536: 3534: 3522: 3513: 3512: 3501: 3495: 3494: 3492: 3480: 3474: 3473: 3462: 3451: 3450: 3443: 3434: 3433: 3431: 3430: 3424: 3418:. Archived from 3417: 3409: 3400: 3399: 3392: 3383: 3382: 3371: 3365: 3364: 3322: 3298: 3292: 3283: 3277: 3276: 3271:. Archived from 3265: 3259: 3248: 3242: 3231: 3220: 3218: 3211: 3205: 3204: 3184: 3178: 3172: 3166: 3165: : 556–563. 3151: 3145: 3144: 3142: 3141: 3130: 3124: 3123: 3112:10.1116/1.581157 3098:(3): 1394–1401. 3087: 3081: 3079: 3072: 3066: 3060: 3054: 3040: 3034: 3033: 3005: 2999: 2998: 2978: 2967: 2966: 2964: 2963: 2953:"All About LEDs" 2949: 2943: 2942: 2940: 2939: 2924: 2918: 2917: 2915: 2914: 2903: 2897: 2896: 2876: 2870: 2869: 2849: 2843: 2842: 2822: 2760: 2755: 2754: 2702:inverse function 2651:Waveform clipper 2645:pinball machines 2641:musical keyboard 2611:Current steering 2452:motor controller 2418:Cockcroft–Walton 2374:Power conversion 2333:crystal detector 2296:optical isolator 2135: 2121: 2107: 2093: 2078: 2064: 2050: 2035: 2023: 1843:majority carrier 1682:gallium arsenide 1609:avalanche effect 1602:Avalanche diodes 1530: 1523: 1508:in this region. 1493: 1491: 1490: 1485: 1483: 1482: 1478: 1477: 1474: 1462: 1457: 1456: 1453: 1442: 1441: 1438: 1143:depletion region 1078:depletion region 1058:gallium arsenide 1024:contact type or 1018:crystal detector 905:thermionic-valve 883: 857: 833: 826: 824:Thermionic diode 822: 744:coined the term 685:Western Electric 664:crystal detector 645: 495:avalanche diodes 368:0.25 V to 0.3 V 340: 336: 278:direction). Its 200:thermionic diode 189:gallium arsenide 143:in one direction 104:bridge rectifier 92: 67: 47: 40: 36: 21: 5320: 5319: 5315: 5314: 5313: 5311: 5310: 5309: 5285: 5284: 5283: 5278: 5216: 5131:audio and video 5116: 5083: 5015: 4952: 4880: 4861:Photomultiplier 4786: 4714: 4662:Quantum circuit 4570: 4564: 4506:Avalanche diode 4492: 4404: 4397: 4286: 4275: 4268: 4263: 4233: 4075: 4073:Further reading 4070: 4069: 4052: 4048: 4040: 4036: 4027: 4025: 4012: 4011: 4007: 3998: 3997: 3993: 3984: 3982: 3975: 3971: 3962: 3960: 3951: 3950: 3946: 3937: 3935: 3930: 3929: 3925: 3894: 3890: 3859: 3855: 3847: 3843: 3827: 3823: 3817:Wayback Machine 3808: 3804: 3795: 3793: 3784: 3783: 3779: 3771: 3767: 3758: 3756: 3747: 3746: 3742: 3734: 3730: 3722: 3718: 3717: 3713: 3705: 3701: 3689: 3687: 3678: 3677: 3673:10.2172/4715062 3661: 3657: 3651:Wayback Machine 3642: 3638: 3599: 3595: 3589:Wayback Machine 3580: 3576: 3561: 3554: 3545: 3544: 3540: 3532: 3524: 3523: 3516: 3503: 3502: 3498: 3490: 3482: 3481: 3477: 3464: 3463: 3454: 3445: 3444: 3437: 3428: 3426: 3422: 3415: 3411: 3410: 3403: 3394: 3393: 3386: 3373: 3372: 3368: 3299: 3295: 3284: 3280: 3275:on 25 May 2018. 3267: 3266: 3262: 3249: 3245: 3232: 3223: 3214: 3212: 3208: 3201: 3185: 3181: 3173: 3169: 3152: 3148: 3139: 3137: 3136:. Jmargolin.com 3132: 3131: 3127: 3088: 3084: 3075: 3073: 3069: 3061: 3057: 3041: 3037: 3006: 3002: 2995: 2979: 2970: 2961: 2959: 2951: 2950: 2946: 2937: 2935: 2926: 2925: 2921: 2912: 2910: 2905: 2904: 2900: 2893: 2877: 2873: 2866: 2850: 2846: 2839: 2823: 2819: 2814: 2776:Diode modelling 2756: 2749: 2746: 2722: 2694: 2673: 2667: 2659: 2653: 2613: 2577: 2559:liquid nitrogen 2524: 2490: 2484: 2439: 2430: 2382: 2376: 2368:Schottky diodes 2313: 2308: 2300:Faraday rotator 2259: 2257:Related devices 2246:coding sequence 2209: 2197: 2170: 2150: 2143: 2136: 2127: 2122: 2113: 2108: 2099: 2094: 2085: 2079: 2070: 2065: 2056: 2051: 2042: 2036: 2027: 2024: 2007:circuit diagram 2003: 1997: 1995:Graphic symbols 1984:Zener breakdown 1914:forward voltage 1825:Schottky diodes 1731:optical storage 1723:resonant cavity 1678:direct band-gap 1556: 1541:Schottky diodes 1533: 1528: 1526: 1521: 1514: 1473: 1469: 1458: 1452: 1448: 1447: 1443: 1437: 1433: 1425: 1422: 1421: 1418: 1379: 1373: 1326: 1304:avalanche diode 1278: 1251: 1242: 1236: 1219: 1213: 1196:depletion width 1172:depletion width 1161:charge carriers 1137:depletion layer 1128: 1112: 1106: 1062:charge carriers 1046: 1040: 1035: 1033:Junction diodes 1014: 997: 925:directly heated 884: 855: 840: 821: 740:were invented, 730: 724: 641: 630:Marconi Company 574:Structure of a 568: 562: 520:radio-frequency 518:), to generate 516:varactor diodes 503: 501:Other functions 483: 434: 429:forward voltage 328:turn-on voltage 308: 300:radio receivers 268: 263: 239:radio receivers 195:are also used. 181:Ferdinand Braun 65: 50: 35: 28: 23: 22: 15: 12: 11: 5: 5318: 5308: 5307: 5302: 5297: 5280: 5279: 5277: 5276: 5275: 5274: 5269: 5259: 5254: 5249: 5244: 5239: 5238: 5237: 5226: 5224: 5218: 5217: 5215: 5214: 5213: 5212: 5210:Wollaston wire 5202: 5197: 5192: 5187: 5182: 5177: 5176: 5175: 5170: 5160: 5155: 5150: 5145: 5144: 5143: 5138: 5133: 5124: 5122: 5118: 5117: 5115: 5114: 5109: 5104: 5103: 5102: 5091: 5089: 5085: 5084: 5082: 5081: 5076: 5071: 5066: 5061: 5056: 5051: 5046: 5041: 5036: 5031: 5025: 5023: 5017: 5016: 5014: 5013: 5008: 5003: 4998: 4993: 4991:Selectron tube 4988: 4983: 4981:Magic eye tube 4978: 4973: 4968: 4962: 4960: 4954: 4953: 4951: 4950: 4945: 4939: 4934: 4929: 4924: 4918: 4913: 4907: 4902: 4895: 4893: 4882: 4881: 4879: 4878: 4873: 4868: 4863: 4858: 4853: 4847: 4842: 4837: 4832: 4827: 4822: 4817: 4812: 4807: 4802: 4796: 4794: 4788: 4787: 4785: 4784: 4779: 4774: 4769: 4764: 4759: 4754: 4749: 4744: 4739: 4734: 4728: 4726: 4720: 4719: 4716: 4715: 4713: 4712: 4707: 4702: 4697: 4692: 4686: 4680: 4675: 4669: 4664: 4659: 4654: 4649: 4643: 4638: 4632: 4627: 4622: 4617: 4612: 4606: 4601: 4595: 4590: 4585: 4580: 4574: 4572: 4566: 4565: 4563: 4562: 4557: 4552: 4550:Schottky diode 4547: 4542: 4537: 4531: 4525: 4519: 4514: 4508: 4502: 4500: 4494: 4493: 4491: 4490: 4484: 4479: 4473: 4467: 4462: 4457: 4456: 4455: 4444: 4443: 4442: 4437: 4426: 4421: 4416: 4409: 4407: 4399: 4398: 4396: 4395: 4390: 4385: 4379: 4374: 4368: 4362: 4357: 4352: 4346: 4340: 4334: 4329: 4323: 4317: 4312: 4307: 4302: 4297: 4291: 4289: 4278: 4270: 4269: 4262: 4261: 4254: 4247: 4239: 4232: 4231:External links 4229: 4228: 4227: 4221: 4215: 4209: 4202: 4201: 4197: 4196: 4185: 4174: 4168: 4162: 4151: 4139: 4138: 4134: 4133: 4122: 4111: 4100: 4092:978-0859340434 4080: 4079: 4074: 4071: 4068: 4067: 4046: 4034: 4005: 3991: 3969: 3944: 3923: 3888: 3853: 3841: 3821: 3802: 3777: 3765: 3740: 3728: 3711: 3699: 3690:|journal= 3655: 3636: 3593: 3574: 3552: 3538: 3514: 3496: 3484:"H. Q. North, 3475: 3452: 3435: 3401: 3384: 3366: 3293: 3278: 3260: 3243: 3221: 3206: 3199: 3179: 3167: 3146: 3125: 3082: 3067: 3055: 3049:, 4th series, 3035: 3000: 2994:978-1483161273 2993: 2968: 2944: 2919: 2898: 2891: 2871: 2864: 2844: 2837: 2816: 2815: 2813: 2810: 2809: 2808: 2803: 2798: 2793: 2788: 2783: 2778: 2773: 2768: 2762: 2761: 2745: 2742: 2721: 2718: 2698:exponentiation 2693: 2690: 2669:Main article: 2666: 2663: 2655:Main article: 2652: 2649: 2612: 2609: 2576: 2573: 2534:radiation. In 2523: 2520: 2514:(as done with 2486:Main article: 2483: 2480: 2460:voltage spikes 2438: 2435: 2429: 2426: 2401:direct current 2378:Main article: 2375: 2372: 2364:crystal diodes 2312: 2309: 2307: 2304: 2292: 2291: 2286: 2281: 2276: 2270: 2265: 2258: 2255: 2254: 2253: 2252:, a UK company 2242: 2235: 2234: 2231: 2228: 2225: 2208: 2205: 2196: 2193: 2169: 2166: 2149: 2146: 2145: 2144: 2137: 2130: 2128: 2123: 2116: 2114: 2109: 2102: 2100: 2095: 2088: 2086: 2080: 2073: 2071: 2068:Schottky diode 2066: 2059: 2057: 2052: 2045: 2043: 2037: 2030: 2028: 2025: 2018: 1999:Main article: 1996: 1993: 1992: 1991: 1980: 1975: 1956: 1950: 1939: 1930: 1923: 1917: 1906: 1897: 1885: 1879: 1872: 1866: 1862: 1859: 1827: 1822: 1799:photodetectors 1791: 1786: 1763:charge carrier 1759: 1754: 1743: 1741:Thermal diodes 1738: 1719: 1714: 1674: 1668: 1654: 1649: 1646: 1641: 1617: 1612: 1604: 1555: 1552: 1531: 1524: 1513: 1510: 1481: 1472: 1468: 1465: 1461: 1451: 1446: 1436: 1432: 1429: 1417: 1414: 1375:Main article: 1372: 1369: 1368: 1367: 1357: 1342:Forward biased 1339: 1324: 1318:Reverse biased 1315: 1276: 1250: 1247: 1235: 1232: 1212: 1209: 1127: 1124: 1116:Schottky diode 1110:Schottky diode 1108:Main article: 1105: 1104:Schottky diode 1102: 1042:Main article: 1039: 1036: 1034: 1031: 1026:welded contact 1013: 1010: 996: 993: 899: 898: 876: 875: 869: 868: 858: 852: 851: 846: 842: 841: 834: 820: 817: 789:, as terms of 726:Main article: 723: 720: 718:was realized. 716:magnetic field 705:crystal diodes 634:radio detector 561: 558: 502: 499: 482: 479: 432: 411: 410: 403: 396: 395: 392: 381: 380: 374: 370: 369: 366: 359: 358: 355: 348: 347: 344: 332:cut-in voltage 307: 304: 267: 264: 262: 261:Main functions 259: 231:direct current 229:(AC) power to 137:that conducts 94: 93: 85: 84: 78: 77: 68: 62: 61: 56: 52: 51: 48: 26: 9: 6: 4: 3: 2: 5317: 5306: 5303: 5301: 5298: 5296: 5293: 5292: 5290: 5273: 5272:mercury relay 5270: 5268: 5265: 5264: 5263: 5260: 5258: 5255: 5253: 5250: 5248: 5245: 5243: 5240: 5236: 5233: 5232: 5231: 5228: 5227: 5225: 5223: 5219: 5211: 5208: 5207: 5206: 5203: 5201: 5198: 5196: 5193: 5191: 5188: 5186: 5183: 5181: 5178: 5174: 5171: 5169: 5166: 5165: 5164: 5161: 5159: 5156: 5154: 5151: 5149: 5146: 5142: 5139: 5137: 5134: 5132: 5129: 5128: 5126: 5125: 5123: 5119: 5113: 5110: 5108: 5105: 5101: 5098: 5097: 5096: 5095:Potentiometer 5093: 5092: 5090: 5086: 5080: 5077: 5075: 5072: 5070: 5067: 5065: 5062: 5060: 5057: 5055: 5052: 5050: 5047: 5045: 5042: 5040: 5037: 5035: 5032: 5030: 5027: 5026: 5024: 5022: 5018: 5012: 5011:Williams tube 5009: 5007: 5004: 5002: 4999: 4997: 4994: 4992: 4989: 4987: 4984: 4982: 4979: 4977: 4974: 4972: 4969: 4967: 4964: 4963: 4961: 4959: 4955: 4949: 4946: 4943: 4940: 4938: 4935: 4933: 4930: 4928: 4925: 4922: 4919: 4917: 4914: 4911: 4908: 4906: 4903: 4900: 4897: 4896: 4894: 4891: 4887: 4883: 4877: 4874: 4872: 4869: 4867: 4864: 4862: 4859: 4857: 4854: 4851: 4848: 4846: 4843: 4841: 4838: 4836: 4833: 4831: 4830:Fleming valve 4828: 4826: 4823: 4821: 4818: 4816: 4813: 4811: 4808: 4806: 4803: 4801: 4798: 4797: 4795: 4793: 4789: 4783: 4780: 4778: 4775: 4773: 4770: 4768: 4765: 4763: 4760: 4758: 4755: 4753: 4750: 4748: 4745: 4743: 4740: 4738: 4735: 4733: 4730: 4729: 4727: 4725: 4721: 4711: 4708: 4706: 4703: 4701: 4698: 4696: 4693: 4690: 4687: 4684: 4681: 4679: 4676: 4673: 4670: 4668: 4665: 4663: 4660: 4658: 4657:Photodetector 4655: 4653: 4650: 4647: 4644: 4642: 4639: 4636: 4633: 4631: 4628: 4626: 4625:Memtransistor 4623: 4621: 4618: 4616: 4613: 4610: 4607: 4605: 4602: 4599: 4596: 4594: 4591: 4589: 4586: 4584: 4581: 4579: 4576: 4575: 4573: 4567: 4561: 4558: 4556: 4553: 4551: 4548: 4546: 4543: 4541: 4538: 4535: 4532: 4529: 4526: 4523: 4520: 4518: 4515: 4512: 4509: 4507: 4504: 4503: 4501: 4499: 4495: 4488: 4485: 4483: 4480: 4477: 4474: 4471: 4468: 4466: 4463: 4461: 4458: 4454: 4451: 4450: 4448: 4445: 4441: 4438: 4436: 4433: 4432: 4430: 4427: 4425: 4422: 4420: 4417: 4414: 4411: 4410: 4408: 4406: 4400: 4394: 4391: 4389: 4386: 4383: 4380: 4378: 4375: 4372: 4369: 4366: 4363: 4361: 4358: 4356: 4353: 4350: 4347: 4344: 4341: 4338: 4335: 4333: 4330: 4327: 4324: 4321: 4318: 4316: 4313: 4311: 4308: 4306: 4303: 4301: 4298: 4296: 4293: 4292: 4290: 4288: 4282: 4279: 4277: 4274:Semiconductor 4271: 4267: 4260: 4255: 4253: 4248: 4246: 4241: 4240: 4237: 4225: 4222: 4219: 4216: 4213: 4210: 4207: 4204: 4203: 4199: 4198: 4194: 4189: 4186: 4183: 4178: 4175: 4172: 4169: 4166: 4163: 4160: 4155: 4152: 4149: 4144: 4141: 4140: 4136: 4135: 4131: 4126: 4123: 4120: 4115: 4112: 4109: 4104: 4101: 4098: 4093: 4089: 4085: 4082: 4081: 4077: 4076: 4063: 4059: 4058: 4050: 4043: 4038: 4024:on 2013-05-24 4023: 4019: 4015: 4009: 4001: 3995: 3980: 3973: 3958: 3954: 3948: 3933: 3932:"About JEDEC" 3927: 3919: 3915: 3911: 3907: 3903: 3899: 3892: 3884: 3880: 3876: 3872: 3868: 3864: 3857: 3850: 3845: 3839: 3838:0-471-15237-4 3835: 3831: 3825: 3818: 3814: 3811: 3806: 3792:on 2016-05-16 3791: 3787: 3781: 3774: 3769: 3755:on 2016-05-16 3754: 3750: 3744: 3737: 3732: 3721: 3715: 3708: 3703: 3695: 3682: 3674: 3670: 3666: 3659: 3652: 3648: 3645: 3640: 3632: 3628: 3624: 3620: 3616: 3612: 3608: 3604: 3597: 3590: 3586: 3583: 3578: 3570: 3566: 3559: 3557: 3548: 3542: 3531: 3529: 3521: 3519: 3510: 3508: 3500: 3489: 3487: 3479: 3471: 3469: 3461: 3459: 3457: 3448: 3442: 3440: 3425:on 2023-05-21 3421: 3414: 3408: 3406: 3397: 3396:"SemiGen Inc" 3391: 3389: 3380: 3378: 3370: 3362: 3358: 3354: 3350: 3346: 3342: 3338: 3334: 3330: 3326: 3321: 3316: 3312: 3308: 3304: 3297: 3290: 3289: 3282: 3274: 3270: 3264: 3257: 3253: 3247: 3240: 3236: 3230: 3228: 3226: 3217: 3210: 3202: 3200:0-471-71814-9 3196: 3192: 3191: 3183: 3176: 3171: 3164: 3160: 3156: 3150: 3135: 3129: 3121: 3117: 3113: 3109: 3105: 3101: 3097: 3093: 3086: 3078: 3071: 3064: 3059: 3052: 3048: 3045: 3039: 3031: 3027: 3023: 3019: 3015: 3011: 3004: 2996: 2990: 2986: 2985: 2977: 2975: 2973: 2958: 2954: 2948: 2934:on 2011-07-10 2933: 2929: 2923: 2908: 2902: 2894: 2892:0-521-37095-7 2888: 2884: 2883: 2875: 2867: 2865:0-7506-5095-8 2861: 2857: 2856: 2848: 2840: 2834: 2830: 2829: 2821: 2817: 2807: 2804: 2802: 2799: 2797: 2794: 2792: 2789: 2787: 2784: 2782: 2779: 2777: 2774: 2772: 2769: 2767: 2764: 2763: 2759: 2753: 2748: 2741: 2739: 2735: 2731: 2728:for diode on 2727: 2720:Abbreviations 2717: 2715: 2711: 2707: 2703: 2699: 2689: 2686: 2685:clamp circuit 2677: 2672: 2662: 2658: 2648: 2646: 2642: 2638: 2634: 2630: 2625: 2622: 2618: 2608: 2606: 2602: 2598: 2594: 2590: 2586: 2582: 2572: 2570: 2566: 2564: 2560: 2556: 2555:electron volt 2552: 2548: 2545: 2541: 2537: 2533: 2529: 2528:semiconductor 2519: 2517: 2513: 2509: 2505: 2502: 2498: 2494: 2489: 2479: 2477: 2473: 2469: 2465: 2464:flyback diode 2461: 2457: 2453: 2449: 2445: 2444:stepper motor 2434: 2425: 2423: 2422: 2419: 2414: 2410: 2406: 2402: 2398: 2394: 2386: 2381: 2371: 2369: 2365: 2361: 2356: 2354: 2353:audio speaker 2350: 2346: 2342: 2338: 2334: 2330: 2322: 2317: 2303: 2301: 2297: 2290: 2287: 2285: 2282: 2280: 2277: 2274: 2271: 2269: 2266: 2264: 2261: 2260: 2251: 2248:developed by 2247: 2243: 2240: 2239: 2238: 2232: 2229: 2226: 2223: 2222: 2221: 2218: 2214: 2211:The European 2204: 2202: 2192: 2190: 2186: 2182: 2177: 2176: 2165: 2163: 2159: 2155: 2141: 2134: 2129: 2126: 2120: 2115: 2112: 2106: 2101: 2098: 2092: 2087: 2083: 2077: 2072: 2069: 2063: 2058: 2055: 2049: 2044: 2040: 2034: 2029: 2022: 2017: 2016: 2015: 2013: 2008: 2002: 1989: 1985: 1981: 1979: 1976: 1973: 1969: 1965: 1961: 1957: 1954: 1951: 1948: 1944: 1940: 1938: 1934: 1933:Tunnel diodes 1931: 1928: 1924: 1921: 1918: 1915: 1911: 1907: 1905: 1901: 1898: 1894: 1890: 1889:step recovery 1886: 1884: 1880: 1877: 1873: 1871:-doped diodes 1870: 1867: 1863: 1860: 1857: 1853: 1849: 1844: 1840: 1836: 1831: 1828: 1826: 1823: 1820: 1816: 1812: 1808: 1804: 1800: 1796: 1792: 1790: 1787: 1784: 1780: 1776: 1772: 1768: 1767:photodetector 1764: 1760: 1758: 1755: 1752: 1748: 1744: 1742: 1739: 1736: 1732: 1728: 1724: 1720: 1718: 1715: 1712: 1711:opto-isolator 1707: 1703: 1699: 1695: 1691: 1687: 1683: 1679: 1675: 1672: 1669: 1666: 1663: 1659: 1655: 1653: 1650: 1647: 1645: 1642: 1639: 1635: 1631: 1627: 1622: 1618: 1616: 1613: 1610: 1605: 1603: 1600: 1599: 1598: 1596: 1593: 1589: 1584: 1580: 1579:cuprous oxide 1576: 1572: 1564: 1560: 1551: 1549: 1544: 1542: 1538: 1518: 1509: 1507: 1506: 1499: 1497: 1470: 1466: 1459: 1449: 1444: 1434: 1430: 1427: 1413: 1411: 1407: 1404: 1400: 1396: 1392: 1388: 1384: 1378: 1365: 1361: 1358: 1355: 1351: 1347: 1343: 1340: 1335: 1331: 1323: 1319: 1316: 1313: 1312:Zener voltage 1309: 1305: 1301: 1297: 1293: 1290: 1289: 1288: 1286: 1275: 1271: 1267: 1263: 1259: 1255: 1246: 1241: 1231: 1229: 1225: 1218: 1205: 1201: 1197: 1193: 1188: 1184: 1181: 1177: 1173: 1168: 1166: 1162: 1157: 1153: 1149: 1145: 1144: 1139: 1138: 1133: 1123: 1121: 1117: 1111: 1101: 1099: 1095: 1091: 1087: 1083: 1079: 1075: 1071: 1067: 1063: 1059: 1055: 1051: 1050:semiconductor 1045: 1030: 1027: 1023: 1019: 1006: 1001: 992: 989: 984: 981: 979: 978:work function 975: 972: 968: 964: 960: 956: 952: 943: 939: 937: 933: 928: 926: 922: 918: 914: 910: 906: 896: 892: 888: 882: 877: 874: 870: 866: 862: 859: 853: 850: 847: 843: 838: 832: 827: 816: 814: 810: 806: 802: 797: 795: 792: 788: 787: 783: 779: 775: 770: 766: 762: 758: 754: 751: 747: 743: 739: 735: 729: 719: 717: 713: 708: 706: 702: 698: 694: 690: 686: 682: 677: 673: 669: 665: 661: 657: 653: 648: 644: 639: 638:Fleming valve 635: 631: 627: 623: 620: 616: 615:Edison effect 611: 606: 604: 600: 597: 593: 589: 586:) diodes and 585: 577: 572: 567: 557: 555: 550: 548: 544: 540: 536: 535:IMPATT diodes 532: 528: 527:tunnel diodes 524: 521: 517: 512: 508: 498: 496: 492: 488: 478: 476: 472: 467: 465: 461: 460:semi-log plot 457: 453: 450: 445: 443: 438: 430: 426: 422: 418: 408: 404: 401: 398: 397: 393: 390: 386: 383: 382: 379: 376:0.6 V to 0.7 375: 372: 371: 367: 365: 361: 360: 356: 354: 350: 349: 345: 342: 341: 335: 333: 329: 325: 317: 312: 303: 301: 297: 296:radio signals 293: 289: 288:rectification 285: 281: 277: 273: 258: 256: 252: 248: 244: 240: 236: 232: 228: 224: 219: 217: 213: 209: 205: 201: 198:The obsolete 196: 194: 190: 186: 182: 178: 174: 171: 167: 163: 159: 158:semiconductor 154: 152: 148: 144: 140: 136: 133: 129: 121: 117: 113: 109: 105: 100: 91: 86: 83: 79: 76: 72: 69: 63: 60: 57: 53: 46: 41: 33: 19: 5029:Cold cathode 4996:Storage tube 4886:Vacuum tubes 4835:Neutron tube 4810:Beam tetrode 4792:Vacuum tubes 4497: 4377:Power MOSFET 4187: 4176: 4170: 4164: 4153: 4142: 4124: 4113: 4102: 4083: 4056: 4049: 4037: 4026:. Retrieved 4022:the original 4017: 4008: 3994: 3983:. Retrieved 3972: 3961:. Retrieved 3957:the original 3947: 3936:. Retrieved 3926: 3901: 3897: 3891: 3866: 3862: 3856: 3844: 3829: 3824: 3805: 3794:. Retrieved 3790:the original 3780: 3768: 3757:. Retrieved 3753:the original 3743: 3731: 3714: 3702: 3681:cite journal 3658: 3639: 3609:(11): 1079. 3606: 3602: 3596: 3577: 3567:. New York: 3564: 3541: 3527: 3506: 3499: 3485: 3478: 3467: 3427:. Retrieved 3420:the original 3376: 3369: 3310: 3306: 3296: 3287: 3281: 3273:the original 3263: 3255: 3246: 3238: 3209: 3189: 3182: 3170: 3162: 3158: 3149: 3138:. Retrieved 3128: 3095: 3091: 3085: 3070: 3058: 3050: 3046: 3038: 3016:(4): 46–47. 3013: 3009: 3003: 2983: 2960:. Retrieved 2956: 2947: 2936:. Retrieved 2932:the original 2922: 2911:. Retrieved 2909:. 2010-05-25 2901: 2881: 2874: 2854: 2847: 2827: 2820: 2801:p–n junction 2791:Lambda diode 2737: 2733: 2725: 2723: 2712: and 2695: 2682: 2660: 2637:phantom keys 2626: 2614: 2600: 2592: 2588: 2578: 2567: 2525: 2491: 2440: 2431: 2416: 2411:or earlier, 2391: 2363: 2357: 2326: 2306:Applications 2293: 2236: 2213:Pro Electron 2210: 2207:Pro Electron 2198: 2173: 2171: 2162:Pro Electron 2151: 2097:Tunnel diode 2004: 1978:Zener diodes 1937:Esaki diodes 1909: 1903: 1888: 1881:Snap-off or 1794: 1717:Laser diodes 1706:scintillator 1702:"white" LEDs 1696:to the near 1667:to be built. 1637: 1633: 1629: 1625: 1608: 1568: 1545: 1519: 1515: 1503: 1500: 1419: 1393:co-inventor 1386: 1382: 1380: 1363: 1360:Leveling off 1359: 1341: 1321: 1317: 1311: 1291: 1282: 1273: 1269: 1265: 1261: 1243: 1234:Forward bias 1220: 1211:Reverse bias 1192:p–n junction 1169: 1148:p–n junction 1141: 1135: 1129: 1113: 1082:p–n junction 1072:), called a 1047: 1025: 1021: 1015: 1004: 985: 982: 948: 929: 924: 920: 902: 894: 890: 886: 813:small signal 809:power supply 804: 800: 798: 772: 768: 764: 760: 756: 752: 745: 731: 709: 704: 700: 649: 607: 582:Thermionic ( 581: 551: 523:oscillations 504: 491:Zener diodes 484: 468: 446: 436: 428: 421:voltage drop 420: 416: 414: 373:Silicon p–n 331: 327: 323: 321: 275: 271: 269: 235:demodulation 220: 199: 197: 166:p–n junction 155: 145:(asymmetric 127: 125: 5195:Transformer 4937:Sutton tube 4777:Charge pump 4630:Memory cell 4560:Zener diode 4522:Laser diode 4405:transistors 4287:transistors 4044:. omega.com 3934:. Jedec.org 3869:(12): 654. 3569:McGraw-Hill 3256:Electronics 3053:: 257–266. 2581:temperature 2540:cosmic rays 2536:electronics 2504:logic gates 2495:constructs 2488:Diode logic 2482:Logic gates 2476:Diode types 2472:transistors 2405:alternators 2125:Zener diode 1966:) and FLL ( 1771:solar cells 1757:Photodiodes 1698:ultraviolet 1690:wavelengths 1665:oscillators 1652:Gunn diodes 1403:exponential 1346:exponential 1308:Zener diode 1098:check valve 1005:cat whisker 805:"rectifier" 750:Greek roots 695:and in the 588:solid-state 584:vacuum-tube 576:vacuum tube 531:Gunn diodes 449:exponential 343:Diode Type 284:check valve 225:to convert 210:, a heated 204:vacuum tube 170:exponential 162:crystalline 147:conductance 112:Zener diode 5289:Categories 5267:reed relay 5257:Parametron 5190:Thermistor 5168:resettable 5127:Connector 5088:Adjustable 5064:Nixie tube 5034:Crossatron 5001:Trochotron 4976:Iconoscope 4971:Charactron 4948:X-ray tube 4820:Compactron 4800:Acorn tube 4757:Buck–boost 4678:Solaristor 4540:Photodiode 4517:Gunn diode 4513:(CLD, CRD) 4295:Transistor 4028:2013-12-19 3985:2008-09-22 3963:2010-08-06 3938:2008-09-22 3796:2010-08-06 3759:2010-08-06 3429:2018-05-24 3320:2103.15809 3285:Sylvania, 3140:2008-09-22 2962:2023-01-19 2938:2010-08-06 2913:2010-08-06 2812:References 2563:gamma rays 2409:commutator 2393:Rectifiers 2349:transducer 2268:Transistor 2164:standard: 2054:Photodiode 1960:capacitors 1945:caused by 1927:transients 1900:Stabistors 1839:rectifiers 1819:thyristors 1809:, such as 1789:PIN diodes 1775:photometry 1581:and later 1505:square law 1283:A diode's 1238:See also: 1228:photodiode 1215:See also: 1022:non-welded 965:, such as 909:electrodes 849:Thermionic 815:circuits. 794:telegraphy 734:rectifiers 425:Datasheets 362:Germanium 292:modulation 223:rectifiers 208:electrodes 151:resistance 141:primarily 5230:Capacitor 5074:Trigatron 5069:Thyratron 5059:Neon lamp 4986:Monoscope 4866:Phototube 4850:Pentagrid 4815:Barretter 4700:Trancitor 4695:Thyristor 4620:Memristor 4545:PIN diode 4322:(ChemFET) 4193:(archive) 4182:(archive) 4159:(archive) 4148:(archive) 4130:(archive) 4119:(archive) 4108:(archive) 4097:(archive) 3977:I.D.E.A. 3904:(5): 55. 3361:248414862 3345:1476-4687 3120:0734-2101 2740:is used. 2706:logarithm 2532:energetic 2512:inversion 2380:Rectifier 2341:rectifies 2337:amplitude 2319:A simple 2273:Thyristor 2263:Rectifier 2168:EIA/JEDEC 1910:stabistor 1908:The term 1896:carriers. 1887:The term 1856:detectors 1795:intrinsic 1662:microwave 1588:substrate 1575:germanium 1537:slew rate 1498:article. 1387:diode law 1300:breakdown 1292:Breakdown 1262:breakdown 1245:voltage. 1165:insulator 1054:germanium 1044:p–n diode 971:strontium 951:electrons 837:rectifier 791:multiplex 748:from the 728:Rectifier 722:Etymology 681:Bell Labs 622:voltmeter 608:In 1873, 592:detectors 547:microwave 462:(using a 206:with two 193:germanium 130:is a two- 5252:Inductor 5222:Reactive 5200:Varistor 5180:Resistor 5158:Antifuse 5044:Ignitron 5039:Dekatron 4927:Klystron 4916:Gyrotron 4845:Nuvistor 4762:Split-pi 4648:(MOS IC) 4615:Memistor 4373:(MuGFET) 4367:(MOSFET) 4339:(FinFET) 3813:Archived 3647:Archived 3585:Archived 3353:35478238 3030:45476055 2796:Lr-diode 2744:See also 2700:and its 2683:A diode 2601:negative 2593:positive 2478:above). 2466:). Many 2448:H-bridge 2323:circuit. 2289:Varistor 1988:Transorb 1876:platinum 1830:Schottky 1813:, power 1777:, or in 1694:infrared 1583:selenium 1334:Semi-log 1268:biased, 936:Nichrome 932:red heat 738:tetrodes 509:and the 419:or just 385:Infrared 353:Schottky 351:Silicon 314:Forward 132:terminal 5153:Ferrite 5121:Passive 5112:Varicap 5100:digital 5049:Krytron 4871:Tetrode 4856:Pentode 4710:Varicap 4691:(3D IC) 4667:RF CMOS 4571:devices 4345:(FGMOS) 4276:devices 3906:Bibcode 3871:Bibcode 3631:7012254 3611:Bibcode 3381:. 1886. 3325:Bibcode 3100:Bibcode 2665:Clamper 2617:battery 2250:Mullard 2140:cathode 2111:Varicap 1953:Varicap 1815:MOSFETs 1686:photons 1571:silicon 1385:or the 1270:forward 1266:reverse 1094:cathode 913:cathode 891:cathode 865:Cathode 801:rectify 782:pentode 778:tetrode 676:silicon 656:mineral 613:called 560:History 402:(LEDs) 394:~1.2 V 276:reverse 272:forward 212:cathode 185:silicon 139:current 116:cathode 75:cathode 59:Passive 5300:Diodes 5185:Switch 4876:Triode 4840:Nonode 4805:Audion 4685:(SITh) 4569:Other 4536:(OLED) 4498:Diodes 4449:(LET) 4431:(FET) 4403:Other 4351:(IGBT) 4328:(CMOS) 4315:BioFET 4310:BiCMOS 4090: 3836: 3629: 3359: 3351: 3343: 3307:Nature 3197: 3118: 3028: 2991: 2889: 2862: 2835: 2605:kelvin 2589:appear 2547:pulses 2413:dynamo 2366:) and 2345:filter 2189:1N580x 2185:1N400x 2181:1N4148 2179:1N914/ 2175:EIA370 2014:flow. 1865:diode. 1854:, and 1852:mixers 1817:, and 1673:(LEDs) 1399:models 1200:doping 1180:dopant 974:oxides 967:barium 959:oxides 915:and a 895:heater 893:, and 786:hexode 774:triode 763:(from 755:(from 693:Purdue 511:doping 391:) p–n 245:or as 233:(DC), 214:and a 5262:Relay 5235:types 5173:eFUSE 4944:(TWT) 4932:Maser 4923:(IOT) 4912:(CFA) 4901:(BWO) 4825:Diode 4772:SEPIC 4752:Boost 4705:TRIAC 4674:(SCR) 4637:(MOV) 4611:(LEC) 4530:(LED) 4489:(UJT) 4478:(SIT) 4472:(PUT) 4415:(BJT) 4384:(TFT) 4360:LDMOS 4355:ISFET 3723:(PDF) 3627:S2CID 3533:(PDF) 3491:(PDF) 3423:(PDF) 3416:(PDF) 3357:S2CID 3315:arXiv 3026:S2CID 2619:. An 2544:noise 2456:relay 2279:TRIAC 2158:JEDEC 2084:(TVS) 2041:(LED) 2026:Diode 1922:(TVS) 1811:IGBTs 1773:, in 1727:laser 1636:, or 1621:JFETs 1156:doped 1152:doped 1090:anode 1070:holes 917:plate 887:plate 861:Plate 769:diode 746:diode 596:12SQ7 294:from 282:is a 243:logic 216:plate 202:is a 128:diode 122:flow. 71:Anode 38:Diode 5205:Wire 5163:Fuse 4747:Buck 4600:(IC) 4588:DIAC 4524:(LD) 4393:UMOS 4388:VMOS 4305:PMOS 4300:NMOS 4285:MOS 4088:ISBN 3834:ISBN 3694:help 3349:PMID 3341:ISSN 3195:ISBN 3116:ISSN 2989:ISBN 2887:ISBN 2860:ISBN 2833:ISBN 2736:for 2730:PCBs 2704:the 2499:and 2454:and 2446:and 2442:in ( 2284:DIAC 2199:The 1869:Gold 1749:for 1626:CLDs 1592:CMOS 1401:the 1381:The 1354:knee 1056:and 969:and 911:: a 863:and 845:Type 765:οδός 456:knee 389:GaAs 191:and 73:and 55:Type 4767:Ćuk 4062:550 3914:doi 3879:doi 3669:doi 3619:doi 3333:doi 3311:604 3163:153 3108:doi 3018:doi 2716:). 2518:). 2497:AND 2195:JIS 2154:EIA 1935:or 1902:or 1893:SRD 1573:or 1230:). 1140:or 961:of 923:or 761:ode 703:or 689:MIT 670:by 497:). 364:p–n 330:or 326:or 298:in 237:in 5291:: 5141:RF 4890:RF 4094:. 4016:. 3912:. 3902:11 3900:. 3877:. 3867:12 3865:. 3685:: 3683:}} 3679:{{ 3667:. 3625:. 3617:. 3607:35 3605:. 3555:^ 3517:^ 3455:^ 3438:^ 3404:^ 3387:^ 3355:. 3347:. 3339:. 3331:. 3323:. 3309:. 3305:. 3254:, 3237:, 3224:^ 3161:, 3114:. 3106:. 3096:16 3094:. 3051:46 3024:. 3012:. 2971:^ 2955:. 2734:CR 2647:. 2538:, 2506:. 2501:OR 2450:) 2355:. 1850:, 1632:, 1628:, 1543:. 1397:) 1264:, 1190:A 1167:. 1100:. 889:, 803:, 796:. 784:, 780:, 776:, 757:δί 753:di 697:UK 691:, 687:, 683:, 619:DC 556:. 533:, 529:, 477:. 444:) 431:(V 302:. 156:A 126:A 4892:) 4888:( 4258:e 4251:t 4244:v 4064:. 4031:. 4002:. 3988:. 3966:. 3941:. 3920:. 3916:: 3908:: 3885:. 3881:: 3873:: 3799:. 3762:. 3725:. 3696:) 3692:( 3675:. 3671:: 3633:. 3621:: 3613:: 3549:. 3535:. 3530:" 3511:. 3493:. 3472:. 3449:. 3432:. 3398:. 3363:. 3335:: 3327:: 3317:: 3203:. 3143:. 3122:. 3110:: 3102:: 3032:. 3020:: 3014:5 2997:. 2965:. 2941:. 2916:. 2895:. 2868:. 2841:. 2726:D 2362:( 2156:/ 2142:. 1974:. 1858:. 1821:. 1785:. 1737:. 1713:. 1640:. 1532:r 1529:Q 1525:r 1522:t 1480:) 1475:T 1471:V 1467:n 1464:( 1460:/ 1454:D 1450:V 1445:e 1439:S 1435:I 1431:= 1428:I 1325:s 1322:I 1277:d 1274:V 897:. 839:. 525:( 514:( 437:° 433:F 387:( 378:V 34:. 20:)

Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.

Index