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Satoshi Hiyamizu

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Satoshi Hiyamizu et al., "Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE", Jpn. J. Appl. Phys. Vol.20 (1981) Pt.2 No.4,
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Graduate School of Engineering from 2000 to 2002. He died in February 2019 at the age of 75.
265: 260: 8: 143: 254: 201: 131: 135: 127: 115: 200:(in Japanese). Saga Shimbun. February 13, 2019. Archived from 111: 246:
Osaka University Graduate School of Engineering - history
171:(in Japanese). Tokushima University. 2002. Archived from 163: 161: 159: 110:
Paper Award as lead author of a paper on mobility in
138:"for contributions to the realization of the first 156: 231:IEEE Morris N. Liebmann Memorial Award recipients 134:materials and devices," and in 2001 was named an 252: 92: 86: 192: 190: 187: 241:IEEE Fellow Class of 2001 (Tokyo section) 69:Learn how and when to remove this message 118:Laboratories Limited, received the 1990 32:This article includes a list of general 16:Japanese electrical engineer (1943–2019) 253: 126:"for outstanding contributions to the 120:IEEE Morris N. Liebmann Memorial Award 97:, 25 February 1943 - 7 February 2019) 18: 108:Japanese Journal of Applied Physics 13: 286:Academic staff of Osaka University 142:(HEMT)". He served as dean of the 38:it lacks sufficient corresponding 14: 302: 140:high electron mobility transistor 23: 112:two-dimensional electron gases 1: 271:Japanese electrical engineers 220: 99:was a Japanese professor of 7: 93: 10: 307: 106:Dr. Hiyamizu won the 1982 236:IEEE Fellow Class of 2001 87: 149: 281:Osaka University alumni 169:"講師氏名:冷水佐壽(ひやみず さとし)教授" 53:more precise citations. 101:electrical engineering 276:Fellows of the IEEE 227:pp. L245-L248. 291:People from Osaka 204:on March 23, 2019 198:"冷水佐壽氏死去 大阪大名誉教授" 175:on March 23, 2019 79: 78: 71: 298: 214: 213: 211: 209: 194: 185: 184: 182: 180: 165: 144:Osaka University 128:epitaxial growth 98: 96: 94:Hiyamizu Satoshi 90: 89: 82:Satoshi Hiyamizu 74: 67: 63: 60: 54: 49:this article by 40:inline citations 27: 26: 19: 306: 305: 301: 300: 299: 297: 296: 295: 251: 250: 223: 218: 217: 207: 205: 196: 195: 188: 178: 176: 167: 166: 157: 152: 84: 75: 64: 58: 55: 45:Please help to 44: 28: 24: 17: 12: 11: 5: 304: 294: 293: 288: 283: 278: 273: 268: 263: 249: 248: 243: 238: 233: 228: 222: 219: 216: 215: 186: 154: 153: 151: 148: 124:Takashi Mimura 77: 76: 31: 29: 22: 15: 9: 6: 4: 3: 2: 303: 292: 289: 287: 284: 282: 279: 277: 274: 272: 269: 267: 264: 262: 259: 258: 256: 247: 244: 242: 239: 237: 234: 232: 229: 225: 224: 203: 199: 193: 191: 174: 170: 164: 162: 160: 155: 147: 145: 141: 137: 133: 132:semiconductor 129: 125: 121: 117: 113: 109: 104: 102: 95: 83: 73: 70: 62: 52: 48: 42: 41: 35: 30: 21: 20: 206:. Retrieved 202:the original 177:. Retrieved 173:the original 130:of compound 105: 81: 80: 65: 56: 37: 266:2019 deaths 261:1943 births 136:IEEE Fellow 59:August 2010 51:introducing 255:Categories 221:References 34:references 208:March 23, 179:March 23, 114:while at 116:Fujitsu 47:improve 36:, but 150:Notes 122:with 88:冷水 佐壽 210:2019 181:2019 257:: 189:^ 158:^ 103:. 91:, 212:. 183:. 85:( 72:) 66:( 61:) 57:( 43:.

Index

references
inline citations
improve
introducing
Learn how and when to remove this message
electrical engineering
Japanese Journal of Applied Physics
two-dimensional electron gases
Fujitsu
IEEE Morris N. Liebmann Memorial Award
Takashi Mimura
epitaxial growth
semiconductor
IEEE Fellow
high electron mobility transistor
Osaka University



"講師氏名:冷水佐壽(ひやみず さとし)教授"
the original


"冷水佐壽氏死去 大阪大名誉教授"
the original
IEEE Morris N. Liebmann Memorial Award recipients
IEEE Fellow Class of 2001
IEEE Fellow Class of 2001 (Tokyo section)
Osaka University Graduate School of Engineering - history
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