Lin Lanying - Knowledge

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Lin did not marry, but she loved two men. The first was Qichang Guan. Lanying and Qichang were in different classes of the same middle school. After graduation Qichang went to another city with his parents, so they separated. But they continued their relationship by mail. Qichang told Lanying that he

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After finishing middle school, she enrolled in Putian high school. Her mother finally accepted her studies because of her success in middle school. However, Lin stayed in this school for only one year. Japan went to war with China and killed many Chinese people. A lot of the students became angry and

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Yang, Bin; Wang, Zhan-guo; Cheng, Yong-hai; Liang, Ji-ben; Lin, Lan-ying; Zhu, Zhan-ping; Xu, Bo; Li, Wei (1995-03-13). "Influence of DX centers in the AlxGa1−xAs barrier on the low-temperature density and mobility of the two-dimensional electron gas in GaAs/AlGaAs modulation-doped heterostructure".

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Her ancestor Lin Run was an imperial censor during the Ming Dynasty. This was an official position that controlled and supervised other government officials. During his career he faced two influential persons who challenged state authority. By helping the emperor deal with these two challengers, the

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At age 78, in 1996, she was diagnosed with cancer. She had been working on building the semiconductor base in the southern part of China. When she was diagnosed, she asked, “Can someone give me another ten years? In ten years, I can definitely finish what I am doing and I can die with no regrets!”

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Lanying wanted to return to China after graduation. However, the Chinese political situation was not good. At that time, the United States had many opportunities for scientists and including international students. Many Chinese students were not allowed to repatriate. Through the recommendation of

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from other countries. She changed the process and made China's first mono-crystalline silicon in 1958. China became the third country to make mono-crystalline silicon. In 1962, she designed the mono-crystal furnace. This furnace was licensed to many countries. In the same year, she made the first

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She also loved Cheng Lin. They met at Fukien Christian University. They had the same interests and both were ambitious. After graduation, they both stayed at this university and worked as teachers. However, because Lanying wanted to learn more things and decided to go to America, they separated.

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and forbid her to get an education. Lin locked herself in her room and swore that she would not eat unless she was allowed to go to school. Her mother was moved by her insistence, and finally allowed her to attend Liqing primary school. Lin often got the best grades in her class, while she was

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to boycott Japan. Many Japanese soldiers and agents were in China, so the parades were suppressed and some students were killed. Lin transferred to a women's school called Hami Lton School. One of her teachers came from the United States and could not speak Chinese very well, so many of her

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at the University of Pennsylvania. In 1955, she received a doctorate degree there in solid-state physics and became the first Chinese national in a hundred years to earn a doctorate degree there. She thought that compared with math, physics was more applicable and more useful for China.

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intervened. From 1966 to 1976, billions of people in China suffered from it. All educators and scientists were suppressed. Lin was not allowed to do research and had to stay in her room under the monitoring of authorities. Lin's educator father died during an assaulted by young people.

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and always fought for herself. She believed that in the science field, women and men are equal and that the reason why fewer women are in this field is that women are more easily distracted by e.g., gossip, so women have to memorize more unrelated things and cannot focus on work.

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Her family stayed poor because her salary was only 207 RMB, or 20 dollars a month. Her workplace had little money. However, she never gave up. In 1957, her workplace-Institute of Semiconductor CAS—finished making the first mono-crystalline

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did not matter. She convinced her mother that if she did not need money to study, she could go. This middle school provided scholarships for students who got the three best grades each semester. Lin earned her scholarship every semester.

241:. She received the National S&T Progress Award twice, and the first prize in CAS S&T Progress Award four times. In 1998, she was given the Henry Fok Achievement Award. In the political field, she was selected as a deputy to the 2214:

Liu, Xianglin; Wang, Lianshan; Lu, Da-Cheng; Wang, Du; Wang, Xiaohui; Lin, Lanying (1998-06-15). "The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy".

204:; February 7, 1918 – March 4, 2003), was a Chinese electrical engineer, materials scientist, physicist, and politician. She is called the "mother of aerospace materials" and the "mother of semiconductor materials" in China. 1890:

Zhao, Youwen; Sun, Niefeng; Dong, Hongwei; Jiao, Jinghua; Zhao, Jianqun; Sun, Tongnian; Lin, Lanying (2002-04-30). "Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers".

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Tan, Liwen; Zan, Yude; Wang, Jun; Wang, Qiyuan; Yu, Yuanhuan; Wang, Shurui; Liu, Zhongli; Lin, Lanying (2002-03-01). "Very low-pressure VLP-CVD growth of high quality γ-Al2O3 films on silicon by multi-step process".

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Zhiyuan, Dong; Youwen, Zhao; Yiping, Zeng; Manlong, Duan; Wenrong, Sun; Jinghua, Jiao; Lanying, Lin (2003-11-01). "Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances".

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classmates could not understand his courses. Lin helped the teacher as an assistant. When the teacher taught something in English, Lanying Lin would translate. Because of this, she was called ‘little teacher’.

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Liu, Xianglin; Lu, Da-Cheng; Wang, Lianshan; Wang, Xiaohui; Wang, Du; Lin, Lanying (1998-09-15). "The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy".

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required to do all the washing and cooking. Then came studying that often kept her up to 12 AM. She got up to cook and then went to school. Her habit of sleeping six hours continued throughout her life.

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Wang, Qi-Yuan; Ma, Zhen-Yu; Cai, Tian-Hai; Yu, Yuan-Huan; Lin, Lan-Ying (1999-01-01). "Neutron irradiation-infrared based measurement method for interstitial oxygen in heavily boron-doped silicon".

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Chen, Nuofu; He, Hongjia; Wang, Yutian; Pan, Kun; Lin, Lanying (1996-10-01). "Dislocations and precipitates in semi-insulating gallium arsenide revealed by ultrasonic Abrahams-Buiocchi etching".

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Li, Rui-Gang; Wang, Zhan-Guo; Liang, Ji-Ben; Ren, Guang-Bao; Fan, Ti-Wen; Lin, Lan-Ying (1995-05-01). "Backgating and light sensitivity in GaAs metal-semiconductor field effect transistors".

368:. At that time, the company had failed several times in making mono-crystalline silicon. Lanying discovered the problems and helped the company successfully engineer the silicon technology. 560:

1989: Successfully made the experiment for melting the gallium arsenide in artificial satellites and received the third prize of The Achievements of National Science and Technology Award

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At age six, she wanted to go to school rather than housework and chatting with other women all day. The only escape was via education. Her mother was deeply influenced by Chinese social

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wanted to marry her and work as teachers in a middle school. However, Lanying was more ambitious. They gradually stopped writing to each other. At the age of 17, Qichang died due to

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Lin, Zhaojun; Wang, Zhanguo; Chen, Wei; Lin, Lanying; Li, Guohua; Liu, Zhenxian; Han, Hexiang; Wang, Zhaoping (1997-06-15). "Absorption spectra of Se8-ring clusters in zeolite 5A".

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Wu, J.; Wang, Z. G.; Lin, L. Y.; Han, C. B.; Zhang, M.; Bai, S. W. (1996-04-29). "Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer".

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Influence of DX centers in the AlxGa12xAs barrier on the low-temperature density and mobility of the two-dimensional electron gas in GaAs/AlGaAs modulation-doped heterostructure

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as one of the best in her class. She worked at the university for 8 years, four years as an assistant to teach some fundamental courses such as mechanics. Her first book was

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Tan, Liwen; Wang, Qiyuan; Wang, Jun; Yu, Yuanhuan; Liu, Zhongli; Lin, Lanying (2003-01-01). "Fabrication of novel double-hetero-epitaxial SOI structure Si/γ-Al2O3/Si".

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in China. By virtue of her experience in Sylvania Company, she knew the processes for making mono-crystalline silicon. However, she could not get equipment because of

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Wang, Z.G.; Li, C.J.; Wan, S.K.; Lin, L.Y. (1990). "Spatial distributions of impurities and defects in Te- and Si-doped GaAs grown in a reduced gravity environment".

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Lin, L.Y.; Zhong, X.R.; Wang, Z.G.; Li, C.J.; Shi, Z.W.; Zhang, M. (1993). "Properties and applications of GaAs single crystal grown under microgravity conditions".

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Zhuang, Qiandong; Li, Hanxuan; Pan, Liang; Li, Jinmin; Kong, Meiying; Lin, Lanying (1999-05-01). "Self-organization of the InGaAs/GaAs quantum dots superlattice".

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Chen, Wei; Lin, Zhaojun; Wang, Zhanguo; Lin, Lanying (1996-10-01). "Some new observation on the formation and optical properties of CdS clusters in zeolite-Y".

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Lei, Zhong; Zhanguo, Wang; Shouke, Wan; Lanying, Lin (1990). "Neutron irradiation induced photoluminescence from silicon crystal grown in ambient hydrogen".

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Chen, Wei; Xu, Yan; Lin, Zhaojun; Wang, Zhanguo; Lin, Lanying (1998-01-01). "Formation, structure and fluorescence of CdS clusters in a mesoporous zeolite".

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1964: Designed the process of making silicon with low malposition and received the second prize of The Achievements of National Science and Technology Award

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Lin, Lanying; Zhong, Xingru; Chen, NuoFu (1998-07-15). "Improvement of stoichiometry in semi-insulating gallium arsenide grown under microgravity".

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approached her and threatened to withhold her earnings for the year of US$ 6,800, to persuade her to stay. Lin accepted this and boarded the ship.

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1964: December, Became the deputy to the Third National People's Congress and a member of the Standing Committee of the National People's Congress

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Chen, Wei; Wang, Zhanguo; Lin, Lanying; Lin, Jianhua; Su, Mianzeng (1997-08-04). "Photostimulated luminescence of silver clusters in zeolite-Y".

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1988: March, Became the deputy to the Seventh National People's Congress and a member of the Standing Committee of the National People's Congress

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Zhou, Bojun; Cao, Funian; Lin, Lanying; Ma, Wenju; Zheng, Yun; Tao, Feng; Xue, Minglun (1994-01-01). Regel, Liya L.; Wilcox, William R. (eds.).

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1993: March, Became the deputy to the Eighth National People's Congress and a member of the Standing Committee of the National People's Congress

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Renyong, Fan; Yuanhuan, Yu; Shiduan, Yin; Lanying, Lin (1986). "Channeling analysis of self-implanted and recrystallized silicon on sapphire".

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Lanying, Lin; Zhaoqiang, Fang; Bojun, Zhou; Suzhen, Zhu; Xianbi, Xiang; Rangyuan, Wu (1982). "Growth and properties of high purity LPE-GaAs".

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emperor gave him money to build a house in Putian, which is now called the Old House of Lin Run. Lin were all born and raised in this house.

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Tian, J.F.; Jiang, D.S.; Zeng, B.R.; Huang, Lin; Kong, G.L.; Lin, L.Y. (1986). "Photon energy dependence of SW effect in a-Si:H films".

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Chen, Wei; Wang, Zhanguo; Lin, Lanying; Su, Mianzeng (1998-01-01). "New color centers and photostimulated luminescence of BaFCl:Eu2+".

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Chen, NuoFu; Wang, Yutian; He, Hongjia; Lin, Lanying (1996-09-15). "Effects of point defects on lattice parameters of semiconductors".

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1988: October 3–7, Joined the conference named “Women’s Influence on the Development of the Third World Science” which was held by the

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Yang, Bin; Cheng, Yong-hai; Wang, Zhan-guo; Liang, Ji-ben; Liao, Qi-wei; Lin, Lan-ying; Zhu, Zhan-ping; Xu, Bo; Li, Wei (1994-12-26).

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in 1956 that covered international students. On 6 January 1957, Lin returned to China after eight years. Just before she boarded, the

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1986: Made the SOS-CMOS integrated circuit and received the third prize of The Achievements of National Science and Technology Award

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Lu, Da-cheng; Liu, Xianglin; Wang, Du; Lin, Lanying (1992-11-01). "Growth of GaSb and GaAsSb in the single phase region by MOVPE".

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The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy

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1957: Made the first mono-crystalline germanium (N-style and P-style) in China and laid the foundation for the development of

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She wanted those years to offset the ten years lost to the Cultural Revolution. At 1:00 p.m. on March 4, 2003, she died.

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Despite the tragedy, she worked at age 60 after the Cultural Revolution. She found that the dislocation density of existing

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Chen, NuoFu; Zhong, Xingru; Lin, Lanying; Xie, Xie; Zhang, Mian (2000-06-01). "Semi-insulating GaAs grown in outer space".

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1963: Made high-purified silicon and received the second prize of The Achievements of National Science and Technology Award

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Zhong, X. R.; Zhou, B. J.; Yan, Q. M.; Cao, F. N.; Li, C. J.; Lin, L. Y.; Ma, W. J.; Zheng, Y.; Tao, F. (1992-04-02).

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1989: October, Joined the Thirteenth International Conference on Amorphous Semiconductor in America with Guanglin Kong

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Chen, NuoFu; He, Hongjia; Wang, Yutian; Lin, Lanying (1997-04-01). "Stoichiometric defects in semi-insulating GaAs".

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Dislocations and Precipitates in Semi-Insulating Gallium Arsenide Revealed by Ultrasonic Abrahams-Buiocchi Etching

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or were killed. Before she was six years old, Lanying was required to wash clothes and cook for the whole family.

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1995: Joined the Thirty-first United Nation's World Conference on Women with the delegation of Chinese government

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1988: September 27–30, Joined the conference hold in Chicago named “World Material—Space Processing Conference”

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at that time and many teachers who worked more than 2 years could study abroad. However, because she was not a

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Spatial Distributions of Impurities and Defects in Te-and Si-doped GaAs Grown in a Reduced Gravity Environment

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extensive material and received the second prize of The Achievements of National Science and Technology Award

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1981: Made the integrated circuit and received the CAS Important Achievements of Science and Technology Award

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Neutron Irradiation-Infrared Based Measurement Method for Interstitial Oxygen in Heavily Boron-Doped Silicon

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1987: Visited America with the delegation of the National Association for Science and Technology and joined

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Lin Lanying was the first child born into a large and prestigious family, which could be traced back to the

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1990-1991: Received the third prize of The Achievements of National Science and Technology Award four times

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The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

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Chen, Wei; Wang, Zhanguo; Lin, Lanying (1997-03-01). "Thermoluminescence of CdS clusters in zeolite-Y".

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Throughout her life, she faced difficulties as a female. After she returned from the US, she joined the

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Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers

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1981: May, Became the managing director of technology department of Chinese Academy of Science (CAS)

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1980: April, Became the second vice-president of China Association for Science and Technology (CAST)

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1986: August, Went to federal Germany and took part in scientific seminars about aerospace materials

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with workmates in CAS and went to Japan to join the International Conference on Thin Film Materials

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She fought a similar battle to continue to Liqing middle school. Her mother said that as a female,

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Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances

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Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer

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was large due to gravity and not good enough to use, so she decided to make the experiment in

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1991: Became the fourth vice-president of China Association for Science and Technology (CAST)

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Neutron irradiation induced photoluminescence from silicon crystal grown in ambient hydrogen

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1986: Became the third vice-president of China Association for Science and Technology (CAST)

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with the vice-chairman of the Chinese people's political consultative Committee Ying Zheng

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Some new observation on the formation and optical properties of CdS clusters in zeolite-Y

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Improvement of Stoichiometry in Semi-Insulating Gallium Arsenide Grown under Microgravity

813: 420:. This was a dangerous experiment because the melting point of gallium arsenide is 1,238 405: 342: 334: 2326: 2291: 2260: 2224: 2192: 2130: 2095: 2060: 2017: 1955: 1868: 1806: 1771: 1735: 1700: 1661: 1618: 1583: 1548: 1509: 1430: 1395: 1317: 1278: 1243: 711:

1994: October, Made the report about the growth of gallium arsenide in aerospace at the

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Properties and Applications of GaAs Single Crystal Grown under Microgravity Conditions

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Backgating and Light Sensitivity in GaAs Metal-Semiconductor Field Effect Transistors

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Cheng Lin married after Lin went to America. Their story has been told in the novel

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1991: Made a satellite by using 5 different circuits of SOS-CMOS integrated circuit

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In 1957, she returned to China and became a researcher at the Institute of Physics

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1979: July, Became the managing director of Chinese Institute of Electronics (CIE)

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her professor at the University of Pennsylvania, she decided to work as a senior

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1978: September—1983, became a member of the All-China Women's Federation (ACWF)

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in China. Lin's gallium arsenide achieved the highest mobility until that time.

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Preliminary Results of GaAs Single Crystal Growth under High Gravity Conditions

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Interface Roughness Scattering in GaAs-AlGaAs Modulation-Doped Heterostructures

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Formation, structure and fluorescence of CdS clusters in a mesoporous zeolite

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1978: Received the CAS Important Achievements of Science and Technology Award

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After Lin had worked in America for a year, China signed a treaty during the

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Channeling analysis of self-implanted and recrystallized silicon on sapphire

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1988: Became the honorary director of Chinese Institute of Electronics (CIE)

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material and raised the new growth technology in high temperature materials

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1974: Made the first mono-crystalline gallium arsenide with no malposition

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1962: Made the first mono-crystalline silicon with no malposition in China

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1978: Became a committee member of Chinese Institute of Electronics (CIE)

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1978: February, Became the deputy to the Fifth National People's Congress

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1975: January, Became the deputy to the Fourth National People's Congress

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1989: August 20–26, Joined the Aerospace Material Conference held by

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1983: May, Became the deputy to the Sixth National People's Congress

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and took part in the International Semiconductor material Conference

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1987: Joined the International Conference of Women Parliamentarians

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1985: Visited America with delegation of National People's Congress

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Fabrication of novel double-hetero-epitaxial SOI structure Si/γ-Al

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Among her many contributions include manufacturing China's first

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of Chinese Academy of Sciences and became the vice president of

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1996: Joined the Conference of Committee for Space Research in

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Self-organization of the InGaAs/GaAs quantum dots superlattice

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New color centers and photostimulated luminescence of BaFCl:Eu

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Growth of GaSb and GaAsSb in the single phase region by MOVPE

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Photostimulated luminescence of silver clusters in zeolite-Y

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to make presentations and met with president of North Korea

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1962: Made the first mono-crystal furnace named TDK in China

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First mono-crystalline silicon and gallium arsenide in China

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and liquid phase and led China to become the world leader.

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Magnetospectroscopy of Bound Phonons in High Purity GaAs

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1996: Became the director of National Key Laboratory of

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1958: November, Made the first mono-crystalline silicon

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Fukien Christian University had exchange programs with

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1962: Made the first mono-crystalline gallium arsenide

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Very low-pressure VLP-CVD growth of high quality γ-Al

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Photon Energy Dependence of SW Effect in α-Si:H Films

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12th National Congress of the Chinese Communist Party

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American Association for the Advancement of Science

2429:People's Republic of China politicians from Fujian 1569: 1459: 1299: 733:Lin participated in various political activities: 364:at the Sylvania Company which mainly manufactured 328: 2345: 569:1992: Made the mono-crystalline indium phosphide 2404:Chinese Communist Party politicians from Fujian 2151: 1889: 1682: 954:Thermoluminescence of CdS clusters in zeolite-Y 435: 1976: 1941: 1913: 1854: 1647: 1538: 1351:Growth of GaAs Single Crystals at High Gravity 821:Growth of GaAs Single Crystals at High Gravity 814:Stoichiometric Defects in Semi-Insulating GaAs 713:Hong Kong University of Science and Technology 509:1960: Made the extensive materials for silicon 2281: 2245: 2213: 2081: 1827: 1792: 1416: 1264: 1229: 1096:"Lanying Lin and Fukien Christian University" 919:Growth and properties of high purity LPE-GaAs 693:National Aeronautics and Space Administration 457: 2003: 1721: 1495: 1381: 1348: 239:China Association for Science and Technology 2312: 1604: 1163:"Outstanding Woman in Science: Lanying Lin" 2424:Members of the Chinese Academy of Sciences 2084:Journal of Physics and Chemistry of Solids 572:1998: Made the effective gallium arsenide 478: 46: 1325: 931:Semi-insulating GaAs grown in outer space 452: 325:and earned certification as a professor. 799: 767:1982: September, Became the delegate of 728: 2346: 1078:"Old House of Run Lin and Lanying Lin" 899:films on silicon by multi-step process 518:1962: Made the first mono-crystalline 425: 1179: 986: 576:by liquefying the extensive materials 272:600 years before. Her sisters became 2434:20th-century Chinese science writers 2154:Materials Science and Engineering: B 1979:Materials Science and Engineering: B 1893:Materials Science and Engineering: B 1607:Semiconductor Science and Technology 1160: 1046: 1044: 1042: 1040: 1038: 1012: 1010: 1008: 982: 980: 591: 1209:. Fujian: Fujian Scientific Press. 1204: 1123: 1100:Fujian Christian university Website 1016: 528:1963: Made the first semiconductor 483:Lin was recognized in many forums: 13: 1050: 126:, bachelor's degree in Mathematics 14: 2465: 2449:University of Pennsylvania alumni 1035: 1005: 977: 804:Among her many publications are: 1144:"Beijing Zhongkejiaying Company" 503:1959: Made the mono-crystalline 494:1958: Made the mono-crystalline 354: 323:Course for Experiments in Optics 2419:Fujian Normal University alumni 2369:20th-century Chinese scientists 2306: 2275: 2239: 2207: 2172: 2145: 2110: 2075: 2040: 1997: 1970: 1935: 1907: 1883: 1848: 1821: 1786: 1750: 1715: 1676: 1641: 1598: 1563: 1532: 1489: 1453: 1410: 1375: 1353:. Springer US. pp. 53–60. 1342: 1293: 1258: 1223: 1198: 1182:The Second Handshake (Comeback) 1075: 631:1972: Met with woman scientist 596:Her social activities include: 579:1990-2000: Led the research on 382:Federal Bureau of Investigation 2364:20th-century Chinese engineers 1780:10.1016/j.jcrysgro.2003.07.009 1207:Selected Papers of Lanying Lin 1173: 1154: 1136: 1117: 1088: 1069: 737:1962: Became vice-chairman of 683:Third World Academy of Science 329:Education in the United States 201: 183:Institute of Semiconductor CAS 120:, bachelor's degree in Physics 1: 2335:10.1016/S0022-2313(96)00129-9 2300:10.1016/S0022-0248(99)00010-X 2269:10.1016/S0022-0248(98)00476-X 2233:10.1016/S0022-0248(98)00264-4 2166:10.1016/S0921-5107(00)00348-2 2104:10.1016/S0022-3697(97)00129-7 1991:10.1016/S0921-5107(97)00016-0 1929:10.1016/S0022-0248(01)02159-5 1901:10.1016/S0921-5107(01)01061-3 1877:10.1016/S0375-9601(97)00400-3 1842:10.1016/S0022-0248(02)01989-9 1815:10.1016/S0038-1098(97)10075-8 1404:10.1016/S0022-0248(98)00372-8 1287:10.1016/S0022-0248(96)00823-8 971: 522:with the highest purification 252: 2384:Chinese materials scientists 2379:Chinese electrical engineers 2374:20th-century women engineers 2201:10.1016/0038-1098(90)90311-x 2139:10.1016/0168-583x(86)90319-8 2069:10.1016/0022-0248(82)90036-7 2026:10.1016/0022-0248(92)90488-5 1964:10.1016/0038-1098(96)00276-1 1744:10.1016/0022-0248(90)90167-j 1709:10.1016/0022-0248(92)90206-X 1670:10.1016/0273-1177(93)90373-j 1592:10.1016/0038-1098(86)90627-7 1557:10.1016/0022-0248(95)80143-Z 1252:10.1016/0022-0248(96)00462-9 966:Timeline of women in science 912:-ring clusters in zeolite 5A 442:All-China Women's Federation 436:Opinions about gender issues 283: 7: 1359:10.1007/978-1-4615-2520-2_5 959: 553:1989: Research on GaInAsSb/ 315:Fukien Christian University 313:She continued her study at 118:Fukien Christian University 16:Chinese materials scientist 10: 2470: 2286:. 201–202 (3): 1161–1163. 2219:. 189–190 (1–2): 287–290. 2181:Solid State Communications 1944:Solid State Communications 1795:Solid State Communications 1650:Advances in Space Research 1627:10.1088/0268-1242/14/1/010 1572:Solid State Communications 1543:. 150, Part 2: 1270–1274. 1180:Zhang, Yang (2013-01-01). 1019:Chinese Female Academician 739:All-China Youth Federation 458:Qichang Guan and Cheng Lin 243:National People's Congress 154:CAS S&T Progress Award 130:University of Pennsylvania 18: 2284:Journal of Crystal Growth 2249:Journal of Crystal Growth 2217:Journal of Crystal Growth 2049:Journal of Crystal Growth 2006:Journal of Crystal Growth 1917:Journal of Crystal Growth 1830:Journal of Crystal Growth 1760:Journal of Crystal Growth 1724:Journal of Crystal Growth 1689:Journal of Crystal Growth 1541:Journal of Crystal Growth 1384:Journal of Crystal Growth 1267:Journal of Crystal Growth 1232:Journal of Crystal Growth 1184:. Sichuang People Press. 1124:Tan, Jiang (2009-08-06). 1021:. Beijing: Kunlun Press. 991:. Beijing: Writer Press. 602:Soviet Academy of Science 349: 187: 179: 171: 164: 147: 139: 110: 102: 83: 54: 45: 38: 2409:Dickinson College alumni 2394:Chinese women physicists 1439:10.1103/PhysRevB.54.8516 1082:Fujian Normal University 1053:Biography of Lin Lanying 908:Absorption spectra of Se 371: 2444:Politicians from Putian 2389:Chinese women engineers 2315:Journal of Luminescence 1498:Applied Physics Letters 1463:Applied Physics Letters 1306:Applied Physics Letters 989:Academician Lanying Lin 987:Zheng, Guoxian (2005). 707:Moscow State University 479:Attributions and honors 245:and as a member of its 216:monocrystalline silicon 2439:Physicists from Fujian 604:and worked for 1 month 453:Personal relationships 2414:Engineers from Fujian 1205:Lin, Lanying (1992). 800:Selected publications 428:) after her in 2001. 418:artificial satellites 265:, in southern China. 1055:. Scientific Press. 729:Political activities 685:(TWAS) at Lee Jast, 635:with Prime Minister 473:The Second Handshake 175:Material Engineering 2454:Writers from Fujian 2327:1997JLum...71..151C 2292:1999JCrGr.201.1161Z 2261:1998JCrGr.193...23L 2225:1998JCrGr.189..287L 2193:1990SSCom..74.1225L 2131:1986NIMPB..15..350R 2096:1998JPCS...59...49C 2061:1982JCrGr..56..533L 2018:1992JCrGr.124..383L 1956:1996SSCom.100..101W 1869:1997PhLA..232..391C 1807:1998SSCom.105..129C 1772:2003JCrGr.259....1Z 1736:1990JCrGr.103...38W 1701:1992JCrGr.119...74Z 1662:1993AdSpR..13g.203L 1619:1999SeScT..14...74W 1584:1986SSCom..57..543T 1549:1995JCrGr.150.1270L 1510:1996ApPhL..68.2550W 1431:1996PhRvB..54.8516C 1396:1998JCrGr.191..586L 1318:1994ApPhL..65.3329Y 1279:1997JCrGr.173..325C 1244:1996JCrGr.167..766C 1167:Sciences of Xiameng 1161:Chen, Chen (1996). 1051:He, Panguo (2014). 406:Cultural Revolution 343:solid state physics 335:New York University 233:She was honored as 2399:Chinese physicists 1895:. 91–92: 521–524. 1017:Guo, Kemi (1998). 600:1959: Went to the 496:gallium antimonide 247:Standing Committee 2187:(11): 1225–1228. 1857:Physics Letters A 1504:(18): 2550–2552. 1469:(11): 1406–1408. 1425:(12): 8516–8521. 1419:Physical Review B 1368:978-1-4613-6073-5 1312:(26): 3329–3331. 592:Social activities 520:indium antimonide 489:transistor radios 397:mono-crystalline 378:Geneva Conference 191: 190: 166:Scientific career 124:Dickinson College 2461: 2339: 2338: 2310: 2304: 2303: 2279: 2273: 2272: 2243: 2237: 2236: 2211: 2205: 2204: 2176: 2170: 2169: 2160:(2–3): 134–138. 2149: 2143: 2142: 2125:(1–6): 350–351. 2114: 2108: 2107: 2079: 2073: 2072: 2044: 2038: 2037: 2012:(1–4): 383–388. 2001: 1995: 1994: 1974: 1968: 1967: 1939: 1933: 1932: 1923:(1–3): 261–266. 1911: 1905: 1904: 1887: 1881: 1880: 1852: 1846: 1845: 1836:(3–4): 255–260. 1825: 1819: 1818: 1790: 1784: 1783: 1754: 1748: 1747: 1719: 1713: 1712: 1680: 1674: 1673: 1645: 1639: 1638: 1602: 1596: 1595: 1567: 1561: 1560: 1536: 1530: 1529: 1518:10.1063/1.116180 1493: 1487: 1486: 1475:10.1063/1.113216 1457: 1451: 1450: 1414: 1408: 1407: 1379: 1373: 1372: 1346: 1340: 1339: 1329: 1327:10.1063/1.112382 1297: 1291: 1290: 1273:(3–4): 325–329. 1262: 1256: 1255: 1238:(3–4): 766–768. 1227: 1221: 1220: 1202: 1196: 1195: 1177: 1171: 1170: 1158: 1152: 1151: 1140: 1134: 1133: 1121: 1115: 1114: 1112: 1111: 1102:. Archived from 1092: 1086: 1085: 1073: 1067: 1066: 1048: 1033: 1032: 1014: 1003: 1002: 984: 427: 414:gallium arsenide 399:gallium arsenide 257:Lin was born in 220:microelectronics 203: 90: 65:February 7, 1918 64: 62: 50: 36: 35: 2469: 2468: 2464: 2463: 2462: 2460: 2459: 2458: 2344: 2343: 2342: 2311: 2307: 2280: 2276: 2244: 2240: 2212: 2208: 2177: 2173: 2150: 2146: 2115: 2111: 2080: 2076: 2045: 2041: 2002: 1998: 1975: 1971: 1940: 1936: 1912: 1908: 1888: 1884: 1853: 1849: 1826: 1822: 1791: 1787: 1755: 1751: 1720: 1716: 1681: 1677: 1646: 1642: 1603: 1599: 1568: 1564: 1537: 1533: 1494: 1490: 1458: 1454: 1415: 1411: 1380: 1376: 1369: 1347: 1343: 1298: 1294: 1263: 1259: 1228: 1224: 1217: 1203: 1199: 1192: 1178: 1174: 1159: 1155: 1142: 1141: 1137: 1130:People Internet 1122: 1118: 1109: 1107: 1094: 1093: 1089: 1074: 1070: 1063: 1049: 1036: 1029: 1015: 1006: 999: 985: 978: 974: 962: 911: 898: 894: 881: 877: 802: 731: 705:, then visited 594: 505:cadmium sulfide 481: 460: 455: 438: 422:Celsius 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