169:. The challenge that had delayed its realization for decades was that germanium atoms are roughly 4% larger than silicon atoms. At the usual high temperatures at which silicon transistors were fabricated, the strain induced by adding these larger atoms into crystalline silicon produced vast numbers of defects, precluding the resulting material being of any use. Meyerson and co-workers discovered that the then believed requirement for high temperature processing was flawed, allowing SiGe growth at sufficiently low temperatures such that for all practical purposes no defects were formed. Once having resolved that basic roadblock, it was shown that resultant SiGe materials could be manufactured into high performance electronics using conventional low cost silicon
230:
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690:"A 200 mm SiGe HBT BiCMOS Technology for Mixed Signal Applications," K. Schonenberg, M. Gilbert, G.D. Berg, S. Wu, M. Soyuer, K. A. Tallman, K. J. Stein, R. A. Groves, S. Subbanna, D.B. Colavito, D.A. Sunderland and B.S. Meyerson," Proceedings of the 1995 Bipolar/BiCMOS Circuits and Technology Meeting, p. 89-92, 1995.
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transfer using light instead of electric current, speeding up data transfer while reducing energy consumption and need for cooling systems. The international team, with lead authors Elham Fadaly, Alain
Dijkstra and Erik Bakkers at Eindhoven University of Technology in the Netherlands and Jens Renè Suckert at
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toolsets. More relevant, the performance of resulting transistors far exceeded what was then thought to be the limit of traditionally manufactured silicon devices, enabling a new generation of low cost commercial wireless technologies such as WiFi. SiGe processes achieve costs similar to those of
759:
Fadaly, Elham M. T.; Dijkstra, Alain; Suckert, Jens Renè; Ziss, Dorian; van
Tilburg, Marvin A. J.; Mao, Chenyang; Ren, Yizhen; van Lange, Victor T.; Korzun, Ksenia; Kölling, Sebastian; Verheijen, Marcel A.; Busse, David; Rödl, Claudia; Furthmüller, Jürgen; Bechstedt, Friedhelm; Stangl, Julian;
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By controlling the composition of a hexagonal SiGe alloy, researchers from
Eindhoven University of Technology developed a material that can emit light. In combination with its electronic properties, this opens up the possibility of producing a laser integrated into a single chip to enable data
578:"SiGe HBTs Reach the Microwave and Millimeter-Wave Frontier," C. Kermarrec, T. Tewksbury, G. Dave, R. Baines, B. Meyerson, D. Harame and M. Gilbert, Proceedings of the 1994 Bipolar/BiCMOS Circuits & Technology Meeting, Minneapolis, Minn., Oct. 10-11, 1994, Sponsored by IEEE, (1994).
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Woelk, Egbert; Shenai-Khatkhate, Deodatta V.; DiCarlo, Ronald L.; Amamchyan, Artashes; Power, Michael B.; Lamare, Bruno; Beaudoin, Grégoire; Sagnes, Isabelle (January 2006). "Designing novel organogermanium OMVPE precursors for high-purity germanium films".
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Shenai, Deo V.; DiCarlo, Ronald L.; Power, Michael B.; Amamchyan, Artashes; Goyette, Randall J.; Woelk, Egbert (January 2007). "Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE".
569: SiGe Base Heterojunction Bipolar Transistor," G.L. Patton, J.H. Comfort, B.S. Meyerson, E.F. Crabbe, G.J. Scilla, E. DeFresart, J.M.C. Stork, J.Y.-C. Sun, D.L. Harame and J. Burghartz, Electron. Dev. Lett. 11, 171 (1990).
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leakage due to the lower bandgap value of SiGe. However, a major issue with SGOI MOSFETs is the inability to form stable oxides with silicon–germanium using standard silicon oxidation processing.
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G. L. Bennett; J. J. Lombardo; R. J. Hemler; G. Silverman; C. W. Whitmore; W. R. Amos; E. W. Johnson; A. Schock; R. W. Zocher; T. K. Keenan; J. C. Hagan; R. W. Englehart (26–29 June 2006).
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543:"Bistable Conditions for Low Temperature Silicon Epitaxy," Bernard S. Meyerson, Franz Himpsel and Kevin J. Uram, Appl. Phys. Lett. 57, 1034 (1990).
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AMD And IBM Unveil New, Higher
Performance, More Power Efficient 65nm Process Technologies At Gathering Of Industry's Top R&D Firms
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182:, alkylgermanium trichlorides, and dimethylaminogermanium trichloride) have been examined as less hazardous liquid alternatives to
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357:. This translates into better low-current and high-frequency performance. Being a heterojunction technology with an adjustable
251:
880:
861:
764:; Haverkort, Jos E. M.; Bakkers, Erik P. A. M. (April 2020). "Direct-bandgap emission from hexagonal Ge and SiGe alloys".
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introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in
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silicon–germanium process, promising a quadrupling in the amount of transistors compared to a contemporary process.
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disclosed a joint development with IBM for a SiGe stressed-silicon technology, targeting the 65 nm process.
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spacecraft. Silicon–germanium thermoelectric devices were also used in other MHW-RTGs and GPHS-RTGs aboard
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B. S. Meyerson, "UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications," in
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748:. 4th International Energy Conversion Engineering Conference and Exhibit (IECEC). San Diego, California.
353:. Heterojunction bipolar transistors have higher forward gain and lower reverse gain than traditional
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silicon CMOS manufacturing and are lower than those of other heterojunction technologies such as
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Mission of Daring: The
General-Purpose Heat Source Radioisotope Thermoelectric Generator
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372:(SOI) technology currently employed in computer chips. SGOI increases the speed of the
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In July 2015, IBM announced that it had created working samples of transistors using a
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Silicon–germanium on insulator (SGOI) is a technology analogous to the
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Application of silicon-germanium thermoelectrics in space exploration
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services are offered by several semiconductor technology companies.
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deposition of Ge-containing films such as high purity Ge, SiGe, and
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556:, vol. 80, no. 10, pp. 1592-1608, Oct. 1992, doi: 10.1109/5.168668.
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A silicon–germanium thermoelectric device MHW-RTG3 was used in the
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The use of silicon–germanium as a semiconductor was championed by
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Circuits and
Applications Using Silicon Heterostructure Devices
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and higher drive currents. SiGe MOSFETs can also provide lower
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674:"IBM Discloses Working Version of a Much Higher-Capacity Chip"
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material for high-temperature applications (>700 K).
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Raminderpal Singh; Modest M. Oprysko; David Harame (2004).
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509:(March 1994). "High-Speed Silicon-Germanium Electronics".
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Ge
Precursors for Strained Si and Compound Semiconductors
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Silicon Germanium: Technology, Modeling, and Design
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may be too technical for most readers to understand
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153:IC design and manufacture. SiGe is also used as a
482:"Silicon–Germanium Gives Semiconductors the Edge"
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105:, i.e. with a molecular formula of the form Si
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345:SiGe allows CMOS logic to be integrated with
178:. Recently, organogermanium precursors (e.g.
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258:. Unsourced material may be challenged and
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333:Learn how and when to remove this message
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278:Learn how and when to remove this message
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209:also sells SiGe manufacturing capacity.
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856:. IEEE Press / John Wiley & Sons.
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315:make it understandable to non-experts
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256:adding citations to reliable sources
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431:Friedrich-Schiller-Universität Jena
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718:"Thermoelectrics History Timeline"
347:heterojunction bipolar transistors
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118:. It is commonly used as a
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396:Thermoelectric application
871:John D. Cressler (2007).
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627:Journal of Crystal Growth
591:Journal of Crystal Growth
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554:Proceedings of the IEEE
120:semiconductor material
760:Finley, Jonathan J.;
376:inside microchips by
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452:Silicon on insulator
370:silicon on insulator
252:improve this section
147:mixed-signal circuit
137:-inducing layer for
917:Integrated circuits
788:2020Natur.580..205F
639:2007JCrGr.298..172S
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511:Scientific American
131:bipolar transistors
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678:The New York Times
488:2008-05-17 at the
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911:Categories
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161:Production
126:(ICs) for
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812:207870211
239:does not
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410:Cassini
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766:Nature
135:strain
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149:and
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