216:
479:
225:
25:
129:
407:), an avalanche occurs at J1 and J3 and the reverse current increases rapidly. SCRs are available with reverse blocking capability, which adds to the forward voltage drop because of the need to have a long, low-doped P1 region. Usually, the reverse blocking voltage rating and forward blocking voltage rating are the same. The typical application for a reverse blocking SCR is in current-source inverters.
295:
418:. It typically has a reverse breakdown rating in the tens of volts. ASCRs are used where either a reverse conducting diode is applied in parallel (for example, in voltage-source inverters) or where reverse voltage would never occur (for example, in switching power supplies or DC traction choppers).
402:
When a negative voltage is applied to the anode and a positive voltage to the cathode, the SCR is in reverse blocking mode, making J1 and J3 reverse biased and J2 forward biased. The device behaves as two diodes connected in series. A small leakage current flows. This is the reverse blocking mode. If
486:
A simple SCR circuit can be illustrated using an AC voltage source connected to a SCR with a resistive load. Without an applied current pulse to the gate of the SCR, the SCR is left in its forward blocking state. This makes the start of conduction of the SCR controllable. The delay angle α, which is
465:
In order for gate triggering to occur, the thyristor should be in the forward blocking state where the applied voltage is less than the breakdown voltage, otherwise forward-voltage triggering may occur. A single small positive voltage pulse can then be applied between the gate and the cathode. This
457:
Forward-voltage triggering occurs when the anode–cathode forward voltage is increased with the gate circuit opened. This is known as avalanche breakdown, during which junction J2 will break down. At sufficient voltages, the thyristor changes to its on state with low voltage drop and large forward
286:, which are bidirectional (i.e. charge carriers can flow through them in either direction). SCRs can be triggered normally only by a positive current going into the gate as opposed to TRIACs, which can be triggered normally by either a positive or a negative current applied to its gate electrode.
366:
An SCR can be brought from blocking mode to conduction mode in two ways: Either by increasing the voltage between anode and cathode beyond the breakover voltage, or by applying a positive pulse at the gate. Once the SCR starts conducting, no more gate voltage is required to maintain it in the
538:
A silicon-controlled switch (SCS) behaves nearly the same way as an SCR; but there are a few differences. Unlike an SCR, an SCS switches off when a positive voltage/input current is applied to another anode gate lead. Unlike an SCR, an SCS can be triggered into conduction when a negative
555:
resembles an SCR in that both act as electrically controlled switches. Unlike an SCR, a TRIAC can pass current in either direction. Thus, TRIACs are particularly useful for AC applications. TRIACs have three leads: a gate lead and two conducting leads, referred to as MT1 and MT2. If no
259:
in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M. Mackintosh of Bell
Laboratories in January 1958. The SCR was developed by a team of
321:
In this mode of operation, the anode (+, p-doped side) is given a positive voltage while the cathode (−, n-doped side) is given a negative voltage, keeping the gate at zero (0) potential i.e. disconnected. In this case junction
469:
Temperature triggering occurs when the width of depletion region decreases as the temperature is increased. When the SCR is near VPO a very small increase in temperature causes junction J2 to be removed which triggers the device.
487:
the instant the gate current pulse is applied with respect to the instant of natural conduction (ωt = 0), controls the start of conduction. Once the SCR conducts, the SCR does not turn off until the current through the SCR, i
503:
SCRs are mainly used in devices where the control of high power, possibly coupled with high voltage, is demanded. Their operation makes them suitable for use in medium- to high-voltage AC power control applications, such as
542:
SCSs are useful in practically all circuits that need a switch that turns on/off through two distinct control pulses. This includes power-switching circuits, logic circuits, lamp drivers, and counters.
530:
Other applications include power switching circuits, controlled rectifiers, speed control of DC shunt motors, SCR crowbars, computer logic circuits, timing circuits, and inverters.
279:. According to Bill Gutzwiller, the terms "SCR" and "controlled rectifier" were earlier, and "thyristor" was applied later, as usage of the device spread internationally.
556:
current/voltage is applied to the gate lead, the TRIAC switches off. On the other hand, if the trigger voltage is applied to the gate lead, the TRIAC switches on.
466:
supplies a single gate current pulse that turns the thyristor onto its on state. In practice, this is the most common method used to trigger a thyristor.
527:
machines made use of these to control lights, solenoids, and other functions electronically, instead of mechanically, hence the name solid-state.
980:
267:
Some sources define silicon-controlled rectifiers and thyristors as synonymous while other sources define silicon-controlled rectifiers as a
42:
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778:
61:
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TRIACs are suitable for light-dimming circuits, phase-control circuits, AC power-switching circuits, AC motor control circuits, etc.
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ed, allowing only a small leakage current from the anode to the cathode. When the applied voltage reaches the breakover value for
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Asymmetrical SCRs can be fabricated with a reverse conducting diode in the same package. These are known as RCTs, for
1176:
1072:
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805:
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108:
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393:, short-circuit the anode and cathode momentarily with a push-button switch or transistor across the junction.
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the reverse voltage is increased, then at critical breakdown level, called the reverse breakdown voltage (V
255:. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of
82:
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Moll, J.; Tanenbaum, M.; Goldey, J.; Holonyak, N. (September 1956). "P-N-P-N Transistor
Switches".
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SCRs are unidirectional devices (i.e. can conduct current only in one direction) as opposed to
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stays zero until another gate current pulse is applied and SCR once again begins conducting.
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of the set of thyristors; the latter being devices with at least four layers of alternating
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offers very high resistance to the current and the SCR is said to be in the off state.
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There are three modes of operation for an SCR depending upon the biasing given to it:
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power transmission. They are also used in the control of welding machines, mainly
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Reduce the current through it below a minimum value called the holding current, or
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led by Gordon Hall and commercialized by Frank W. "Bill" Gutzwiller in 1957.
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SCRs and similar devices are used for rectification of high-power AC in
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state on removal of the gate voltage is called the latching current.
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Christiansen, Donald; Alexander, Charles; Jurgen, Ronald (2005).
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state. The minimum current necessary to maintain the SCR in the
247:-controlling device. The name "silicon controlled rectifier" is
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An SCR incapable of blocking reverse voltage is known as an
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undergoes avalanche breakdown. At this breakover voltage
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Standard
Handbook of Electronic Engineering, 5th Edition
860:"The Early History of the Silicon Controlled Rectifier"
725:"The Early History of the Silicon Controlled Rectifier"
298:
Characteristic curve of a silicon-controlled rectifier
539:
voltage/output current is applied to that same lead.
458:
current. In this case, J1 and J3 are already forward-
835:
The
Electrical Engineering Handbook, Second Edition
49:. Unsourced material may be challenged and removed.
16:Four-layer solid-state current-controlling device
2010:
909:
885:. United States: Don Fowley. pp. 230–231.
354:starts conducting, but below breakover voltage
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974:
428:
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913:Thyristor Theory and Design Considerations
674:Properties and Applications of Transistors
482:A simple SCR circuit with a resistive load
361:
169:Gordon Hall and Frank W. "Bill" Gutzwiller
127:
988:
821:International Electrotechnical Commission
109:Learn how and when to remove this message
923:
919:(rev.1, HBD855/D ed.). p. 240.
519:and similar processes. It is used as an
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223:
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2011:
766:. IEEE Industry Applications Magazine.
533:
508:, power regulators and motor control.
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880:
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747:"Semiconductors: Thyristors and more"
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546:
473:
289:
1413:Three-dimensional integrated circuit
832:
584:Integrated gate-commutated thyristor
47:adding citations to reliable sources
18:
1194:Programmable unijunction transistor
13:
1095:Multi-gate field-effect transistor
910:ON Semiconductor (November 2006).
903:
700:"Law that has driven digital life"
309:Forward conduction mode (on state)
238:semiconductor controlled rectifier
14:
2060:
1073:Insulated-gate bipolar transistor
942:
883:Power Electronics: A First Course
579:Insulated-gate bipolar transistor
312:Reverse blocking mode (off state)
306:Forward blocking mode (off state)
1317:Heterostructure barrier varactor
1044:Chemical field-effect transistor
926:Industrial and Power Electronics
857:
722:
214:
23:
1365:Mixed-signal integrated circuit
874:
851:
833:Dorf, Richard C. (1997-09-26).
826:
498:
34:needs additional citations for
814:
789:
770:
753:
739:
716:
691:
664:
621:
378:There are two ways to turn it
58:"Silicon controlled rectifier"
1:
671:Vasseur, J. P. (2016-06-06).
614:
423:reverse conducting thyristors
228:SCR 4-layer (p-n-p-n) diagram
1396:Silicon controlled rectifier
1258:Organic light-emitting diode
1148:Diffused junction transistor
251:'s trade name for a type of
234:silicon controlled rectifier
133:Silicon controlled rectifier
122:Silicon controlled rectifier
7:
2034:General Electric inventions
1200:Static induction transistor
1137:Bipolar junction transistor
1089:MOS field-effect transistor
1061:Fin field-effect transistor
569:High-voltage direct current
562:
513:high-voltage direct current
10:
2065:
1407:Static induction thyristor
642:10.1109/jrproc.1956.275172
434:forward-voltage triggering
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1844:
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1576:(Hexode, Heptode, Octode)
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1328:Hybrid integrated circuit
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1171:Light-emitting transistor
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525:Early solid-state pinball
429:Thyristor turn-on methods
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1623:Backward-wave oscillator
1333:Light emitting capacitor
1189:Point-contact transistor
1159:Junction Gate FET (JFET)
698:Twist, Jo (2005-04-18).
517:gas tungsten arc welding
2049:20th-century inventions
1634:Crossed-field amplifier
1153:Field-effect transistor
949:SCR at AllAboutCircuits
574:Gate turn-off thyristor
362:Forward conduction mode
188:Pin configuration
1803:Voltage-regulator tube
1370:MOS integrated circuit
1235:Constant-current diode
1211:Unijunction transistor
785:. General Electric Co.
630:Proceedings of the IRE
483:
299:
229:
175:First production
1872:Electrolytic detector
1645:Inductive output tube
1461:Low-dropout regulator
1376:Organic semiconductor
1307:Printed circuit board
1143:Darlington transistor
990:Electronic components
761:"SCR is 50 Years Old"
749:. Edison Tech Center.
491:, becomes negative. i
481:
398:Reverse blocking mode
389:With the gate turned
317:Forward blocking mode
297:
227:
2019:Solid state switches
1690:Beam deflection tube
1359:Metal oxide varistor
1252:Light-emitting diode
1106:Thin-film transistor
1067:Floating-gate MOSFET
933:K. B. Khanchandani.
779:"The SCR Revolution"
523:in various devices.
43:improve this article
1666:Traveling-wave tube
1466:Switching regulator
1302:Printed electronics
1279:Step recovery diode
1056:Depletion-load NMOS
881:Mohan, Ned (2012).
534:Comparison with SCS
157:Ian M. Mackintosh (
123:
2044:1957 in technology
2039:1957 introductions
1971:Crystal oscillator
1831:Variable capacitor
1506:Switched capacitor
1448:Voltage regulators
1322:Integrated circuit
1206:Tetrode transistor
1184:Pentode transistor
1177:Organic LET (OLET)
1164:Organic FET (OFET)
954:SCR Circuit Design
547:Compared to TRIACs
484:
474:Simple SCR circuit
450:thermal triggering
300:
290:Modes of operation
230:
121:
2024:Power electronics
2006:
2005:
1966:Ceramic resonator
1778:Mercury-arc valve
1730:Video camera tube
1682:Cathode-ray tubes
1442:
1441:
1050:Complementary MOS
935:Power Electronics
892:978-1-118-07480-0
777:Mungenast, J. E.
599:Crowbar (circuit)
589:Voltage regulator
521:electronic switch
257:Bell Laboratories
222:
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208:Electronic symbol
159:Bell Laboratories
150:Working principle
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1629:Cavity magnetron
1456:Linear regulator
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636:(9): 1174–1182.
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412:asymmetrical SCR
249:General Electric
240:is a four-layer
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904:Further reading
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800:. Mcgraw-hill.
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1735:Williams tube
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1554:Fleming valve
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1381:Photodetector
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1349:Memtransistor
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998:Semiconductor
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844:9781420049763
840:
837:. CRC Press.
836:
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807:9780071384216
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684:9781483138886
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269:proper subset
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99:December 2019
91:
88:
84:
81:
77:
74:
70:
67:
63:
60: –
59:
55:
54:Find sources:
48:
44:
38:
37:
32:This article
30:
26:
21:
20:
1753:Cold cathode
1720:Storage tube
1610:Vacuum tubes
1559:Neutron tube
1534:Beam tetrode
1516:Vacuum tubes
1395:
1101:Power MOSFET
934:
925:
912:
882:
876:
864:. Retrieved
858:Ward, Jack.
853:
834:
828:
816:
797:
791:
782:
772:
755:
741:
729:. Retrieved
723:Ward, Jack.
718:
707:. Retrieved
703:
693:
677:. Elsevier.
673:
666:
633:
629:
623:
558:
550:
541:
537:
529:
510:
506:lamp dimming
502:
499:Applications
485:
468:
464:
456:
444:
440:
420:
415:
411:
409:
401:
390:
379:
377:
372:
368:
365:
355:
351:
347:
343:
340:reverse-bias
335:
332:forward-bias
327:
323:
320:
301:
281:
266:
237:
233:
231:
105:
96:
86:
79:
72:
65:
53:
41:Please help
36:verification
33:
1919:Transformer
1661:Sutton tube
1501:Charge pump
1354:Memory cell
1284:Zener diode
1246:Laser diode
1129:transistors
1011:transistors
862:. p. 7
727:. p. 6
242:solid-state
2029:Rectifiers
2013:Categories
1991:reed relay
1981:Parametron
1914:Thermistor
1892:resettable
1851:Connector
1812:Adjustable
1788:Nixie tube
1758:Crossatron
1725:Trochotron
1700:Iconoscope
1695:Charactron
1672:X-ray tube
1544:Compactron
1524:Acorn tube
1481:Buck–boost
1402:Solaristor
1264:Photodiode
1241:Gunn diode
1237:(CLD, CRD)
1019:Transistor
709:2018-07-27
615:References
447:triggering
334:ed, while
69:newspapers
1954:Capacitor
1798:Trigatron
1793:Thyratron
1783:Neon lamp
1710:Monoscope
1590:Phototube
1574:Pentagrid
1539:Barretter
1424:Trancitor
1419:Thyristor
1344:Memristor
1269:PIN diode
1046:(ChemFET)
650:0096-8390
253:thyristor
1976:Inductor
1946:Reactive
1924:Varistor
1904:Resistor
1882:Antifuse
1768:Ignitron
1763:Dekatron
1651:Klystron
1640:Gyrotron
1569:Nuvistor
1486:Split-pi
1372:(MOS IC)
1339:Memistor
1097:(MuGFET)
1091:(MOSFET)
1063:(FinFET)
866:12 April
731:12 April
704:BBC News
658:51673404
563:See also
166:Invented
1877:Ferrite
1845:Passive
1836:Varicap
1824:digital
1773:Krytron
1595:Tetrode
1580:Pentode
1434:Varicap
1415:(3D IC)
1391:RF CMOS
1295:devices
1069:(FGMOS)
1000:devices
783:RF Cafe
594:Snubber
346:, then
245:current
201:cathode
152:
83:scholar
1909:Switch
1600:Triode
1564:Nonode
1529:Audion
1409:(SITh)
1293:Other
1260:(OLED)
1222:Diodes
1173:(LET)
1155:(FET)
1127:Other
1075:(IGBT)
1052:(CMOS)
1039:BioFET
1034:BiCMOS
889:
841:
804:
681:
656:
648:
460:biased
284:TRIACs
182:, 1957
143:Active
85:
78:
71:
64:
56:
1986:Relay
1959:types
1897:eFUSE
1668:(TWT)
1656:Maser
1647:(IOT)
1636:(CFA)
1625:(BWO)
1549:Diode
1496:SEPIC
1476:Boost
1429:TRIAC
1398:(SCR)
1361:(MOV)
1335:(LEC)
1254:(LED)
1213:(UJT)
1202:(SIT)
1196:(PUT)
1139:(BJT)
1108:(TFT)
1084:LDMOS
1079:ISFET
917:(PDF)
764:(PDF)
654:S2CID
553:TRIAC
193:Anode
90:JSTOR
76:books
1929:Wire
1887:Fuse
1471:Buck
1324:(IC)
1312:DIAC
1248:(LD)
1117:UMOS
1112:VMOS
1029:PMOS
1024:NMOS
1009:MOS
887:ISBN
868:2014
839:ISBN
802:ISBN
733:2014
679:ISBN
646:ISSN
604:DIAC
416:ASCR
330:are
326:and
275:and
199:and
197:gate
139:Type
62:news
1491:Ćuk
638:doi
609:BJT
391:off
380:off
338:is
236:or
45:by
2015::
1865:RF
1614:RF
781:.
702:.
652:.
644:.
634:44
632:.
551:A
462:.
445:dt
441:dv
425:.
405:BR
382::
373:ON
369:ON
356:J2
352:J2
348:J2
344:J2
336:J2
328:J3
324:J1
273:n-
232:A
195:,
1616:)
1612:(
982:e
975:t
968:v
937:.
928:.
895:.
870:.
847:.
810:.
735:.
712:.
687:.
660:.
640::
493:s
489:s
443:/
161:)
112:)
106:(
101:)
97:(
87:·
80:·
73:·
66:·
39:.
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