227:
490:
236:
36:
140:
418:), an avalanche occurs at J1 and J3 and the reverse current increases rapidly. SCRs are available with reverse blocking capability, which adds to the forward voltage drop because of the need to have a long, low-doped P1 region. Usually, the reverse blocking voltage rating and forward blocking voltage rating are the same. The typical application for a reverse blocking SCR is in current-source inverters.
306:
429:. It typically has a reverse breakdown rating in the tens of volts. ASCRs are used where either a reverse conducting diode is applied in parallel (for example, in voltage-source inverters) or where reverse voltage would never occur (for example, in switching power supplies or DC traction choppers).
413:
When a negative voltage is applied to the anode and a positive voltage to the cathode, the SCR is in reverse blocking mode, making J1 and J3 reverse biased and J2 forward biased. The device behaves as two diodes connected in series. A small leakage current flows. This is the reverse blocking mode. If
497:
A simple SCR circuit can be illustrated using an AC voltage source connected to a SCR with a resistive load. Without an applied current pulse to the gate of the SCR, the SCR is left in its forward blocking state. This makes the start of conduction of the SCR controllable. The delay angle α, which is
476:
In order for gate triggering to occur, the thyristor should be in the forward blocking state where the applied voltage is less than the breakdown voltage, otherwise forward-voltage triggering may occur. A single small positive voltage pulse can then be applied between the gate and the cathode. This
468:
Forward-voltage triggering occurs when the anode–cathode forward voltage is increased with the gate circuit opened. This is known as avalanche breakdown, during which junction J2 will break down. At sufficient voltages, the thyristor changes to its on state with low voltage drop and large forward
297:, which are bidirectional (i.e. charge carriers can flow through them in either direction). SCRs can be triggered normally only by a positive current going into the gate as opposed to TRIACs, which can be triggered normally by either a positive or a negative current applied to its gate electrode.
377:
An SCR can be brought from blocking mode to conduction mode in two ways: Either by increasing the voltage between anode and cathode beyond the breakover voltage, or by applying a positive pulse at the gate. Once the SCR starts conducting, no more gate voltage is required to maintain it in the
549:
A silicon-controlled switch (SCS) behaves nearly the same way as an SCR; but there are a few differences. Unlike an SCR, an SCS switches off when a positive voltage/input current is applied to another anode gate lead. Unlike an SCR, an SCS can be triggered into conduction when a negative
566:
resembles an SCR in that both act as electrically controlled switches. Unlike an SCR, a TRIAC can pass current in either direction. Thus, TRIACs are particularly useful for AC applications. TRIACs have three leads: a gate lead and two conducting leads, referred to as MT1 and MT2. If no
270:
in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M. Mackintosh of Bell
Laboratories in January 1958. The SCR was developed by a team of
332:
In this mode of operation, the anode (+, p-doped side) is given a positive voltage while the cathode (−, n-doped side) is given a negative voltage, keeping the gate at zero (0) potential i.e. disconnected. In this case junction
480:
Temperature triggering occurs when the width of depletion region decreases as the temperature is increased. When the SCR is near VPO a very small increase in temperature causes junction J2 to be removed which triggers the device.
498:
the instant the gate current pulse is applied with respect to the instant of natural conduction (ωt = 0), controls the start of conduction. Once the SCR conducts, the SCR does not turn off until the current through the SCR, i
514:
SCRs are mainly used in devices where the control of high power, possibly coupled with high voltage, is demanded. Their operation makes them suitable for use in medium- to high-voltage AC power control applications, such as
553:
SCSs are useful in practically all circuits that need a switch that turns on/off through two distinct control pulses. This includes power-switching circuits, logic circuits, lamp drivers, and counters.
541:
Other applications include power switching circuits, controlled rectifiers, speed control of DC shunt motors, SCR crowbars, computer logic circuits, timing circuits, and inverters.
290:. According to Bill Gutzwiller, the terms "SCR" and "controlled rectifier" were earlier, and "thyristor" was applied later, as usage of the device spread internationally.
567:
current/voltage is applied to the gate lead, the TRIAC switches off. On the other hand, if the trigger voltage is applied to the gate lead, the TRIAC switches on.
477:
supplies a single gate current pulse that turns the thyristor onto its on state. In practice, this is the most common method used to trigger a thyristor.
538:
machines made use of these to control lights, solenoids, and other functions electronically, instead of mechanically, hence the name solid-state.
991:
278:
Some sources define silicon-controlled rectifiers and thyristors as synonymous while other sources define silicon-controlled rectifiers as a
53:
100:
17:
771:
789:
72:
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TRIACs are suitable for light-dimming circuits, phase-control circuits, AC power-switching circuits, AC motor control circuits, etc.
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79:
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ed, allowing only a small leakage current from the anode to the cathode. When the applied voltage reaches the breakover value for
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Asymmetrical SCRs can be fabricated with a reverse conducting diode in the same package. These are known as RCTs, for
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119:
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404:, short-circuit the anode and cathode momentarily with a push-button switch or transistor across the junction.
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the reverse voltage is increased, then at critical breakdown level, called the reverse breakdown voltage (V
266:. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of
93:
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Moll, J.; Tanenbaum, M.; Goldey, J.; Holonyak, N. (September 1956). "P-N-P-N Transistor
Switches".
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SCRs are unidirectional devices (i.e. can conduct current only in one direction) as opposed to
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stays zero until another gate current pulse is applied and SCR once again begins conducting.
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of the set of thyristors; the latter being devices with at least four layers of alternating
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offers very high resistance to the current and the SCR is said to be in the off state.
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There are three modes of operation for an SCR depending upon the biasing given to it:
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power transmission. They are also used in the control of welding machines, mainly
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Reduce the current through it below a minimum value called the holding current, or
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led by Gordon Hall and commercialized by Frank W. "Bill" Gutzwiller in 1957.
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SCRs and similar devices are used for rectification of high-power AC in
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state on removal of the gate voltage is called the latching current.
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Christiansen, Donald; Alexander, Charles; Jurgen, Ronald (2005).
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state. The minimum current necessary to maintain the SCR in the
258:-controlling device. The name "silicon controlled rectifier" is
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An SCR incapable of blocking reverse voltage is known as an
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undergoes avalanche breakdown. At this breakover voltage
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Standard
Handbook of Electronic Engineering, 5th Edition
871:"The Early History of the Silicon Controlled Rectifier"
736:"The Early History of the Silicon Controlled Rectifier"
309:
Characteristic curve of a silicon-controlled rectifier
550:
voltage/output current is applied to that same lead.
469:
current. In this case, J1 and J3 are already forward-
846:
The
Electrical Engineering Handbook, Second Edition
60:. Unsourced material may be challenged and removed.
27:Four-layer solid-state current-controlling device
2021:
920:
896:. United States: Don Fowley. pp. 230–231.
365:starts conducting, but below breakover voltage
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924:Thyristor Theory and Design Considerations
685:Properties and Applications of Transistors
493:A simple SCR circuit with a resistive load
372:
180:Gordon Hall and Frank W. "Bill" Gutzwiller
138:
999:
832:International Electrotechnical Commission
120:Learn how and when to remove this message
934:
930:(rev.1, HBD855/D ed.). p. 240.
530:and similar processes. It is used as an
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408:
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14:
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777:. IEEE Industry Applications Magazine.
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519:, power regulators and motor control.
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758:"Semiconductors: Thyristors and more"
708:
557:
484:
300:
1424:Three-dimensional integrated circuit
843:
595:Integrated gate-commutated thyristor
58:adding citations to reliable sources
29:
1205:Programmable unijunction transistor
24:
1106:Multi-gate field-effect transistor
921:ON Semiconductor (November 2006).
914:
711:"Law that has driven digital life"
320:Forward conduction mode (on state)
249:semiconductor controlled rectifier
25:
2071:
1084:Insulated-gate bipolar transistor
953:
894:Power Electronics: A First Course
590:Insulated-gate bipolar transistor
323:Reverse blocking mode (off state)
317:Forward blocking mode (off state)
1328:Heterostructure barrier varactor
1055:Chemical field-effect transistor
937:Industrial and Power Electronics
868:
733:
225:
34:
1376:Mixed-signal integrated circuit
885:
862:
844:Dorf, Richard C. (1997-09-26).
837:
509:
45:needs additional citations for
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800:
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764:
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727:
702:
675:
632:
389:There are two ways to turn it
69:"Silicon controlled rectifier"
13:
1:
682:Vasseur, J. P. (2016-06-06).
625:
434:reverse conducting thyristors
239:SCR 4-layer (p-n-p-n) diagram
1407:Silicon controlled rectifier
1269:Organic light-emitting diode
1159:Diffused junction transistor
262:'s trade name for a type of
245:silicon controlled rectifier
144:Silicon controlled rectifier
133:Silicon controlled rectifier
18:Silicon-controlled rectifier
7:
2045:General Electric inventions
1211:Static induction transistor
1148:Bipolar junction transistor
1100:MOS field-effect transistor
1072:Fin field-effect transistor
580:High-voltage direct current
573:
524:high-voltage direct current
10:
2076:
1418:Static induction thyristor
653:10.1109/jrproc.1956.275172
445:forward-voltage triggering
1955:
1855:
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1619:
1587:(Hexode, Heptode, Octode)
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1457:
1339:Hybrid integrated circuit
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1231:
1182:Light-emitting transistor
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536:Early solid-state pinball
440:Thyristor turn-on methods
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1634:Backward-wave oscillator
1344:Light emitting capacitor
1200:Point-contact transistor
1170:Junction Gate FET (JFET)
709:Twist, Jo (2005-04-18).
528:gas tungsten arc welding
2060:20th-century inventions
1645:Crossed-field amplifier
1164:Field-effect transistor
960:SCR at AllAboutCircuits
585:Gate turn-off thyristor
373:Forward conduction mode
199:Pin configuration
1814:Voltage-regulator tube
1381:MOS integrated circuit
1246:Constant-current diode
1222:Unijunction transistor
796:. General Electric Co.
641:Proceedings of the IRE
494:
310:
240:
186:First production
1883:Electrolytic detector
1656:Inductive output tube
1472:Low-dropout regulator
1387:Organic semiconductor
1318:Printed circuit board
1154:Darlington transistor
1001:Electronic components
772:"SCR is 50 Years Old"
760:. Edison Tech Center.
502:, becomes negative. i
492:
409:Reverse blocking mode
400:With the gate turned
328:Forward blocking mode
308:
238:
2030:Solid state switches
1701:Beam deflection tube
1370:Metal-oxide varistor
1263:Light-emitting diode
1117:Thin-film transistor
1078:Floating-gate MOSFET
944:K. B. Khanchandani.
790:"The SCR Revolution"
534:in various devices.
54:improve this article
1677:Traveling-wave tube
1477:Switching regulator
1313:Printed electronics
1290:Step recovery diode
1067:Depletion-load NMOS
892:Mohan, Ned (2012).
545:Comparison with SCS
168:Ian M. Mackintosh (
134:
2055:1957 in technology
2050:1957 introductions
1982:Crystal oscillator
1842:Variable capacitor
1517:Switched capacitor
1459:Voltage regulators
1333:Integrated circuit
1217:Tetrode transistor
1195:Pentode transistor
1188:Organic LET (OLET)
1175:Organic FET (OFET)
965:SCR Circuit Design
558:Compared to TRIACs
495:
485:Simple SCR circuit
461:thermal triggering
311:
301:Modes of operation
241:
132:
2035:Power electronics
2017:
2016:
1977:Ceramic resonator
1789:Mercury-arc valve
1741:Video camera tube
1693:Cathode-ray tubes
1453:
1452:
1061:Complementary MOS
946:Power Electronics
903:978-1-118-07480-0
788:Mungenast, J. E.
610:Crowbar (circuit)
600:Voltage regulator
532:electronic switch
268:Bell Laboratories
233:
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219:Electronic symbol
170:Bell Laboratories
161:Working principle
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16:(Redirected from
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1756:Gas-filled tubes
1640:Cavity magnetron
1467:Linear regulator
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647:(9): 1174–1182.
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423:asymmetrical SCR
260:General Electric
251:is a four-layer
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811:. Mcgraw-hill.
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1009:Semiconductor
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855:9781420049763
851:
848:. CRC Press.
847:
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818:9780071384216
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280:proper subset
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110:December 2019
102:
99:
95:
92:
88:
85:
81:
78:
74:
71: –
70:
66:
65:Find sources:
59:
55:
49:
48:
43:This article
41:
37:
32:
31:
19:
1764:Cold cathode
1731:Storage tube
1621:Vacuum tubes
1570:Neutron tube
1545:Beam tetrode
1527:Vacuum tubes
1406:
1112:Power MOSFET
945:
936:
923:
893:
887:
875:. Retrieved
869:Ward, Jack.
864:
845:
839:
827:
808:
802:
793:
783:
766:
752:
740:. Retrieved
734:Ward, Jack.
729:
718:. Retrieved
714:
704:
688:. Elsevier.
684:
677:
644:
640:
634:
569:
561:
552:
548:
540:
521:
517:lamp dimming
513:
510:Applications
496:
479:
475:
467:
455:
451:
431:
426:
422:
420:
412:
401:
390:
388:
383:
379:
376:
366:
362:
358:
354:
351:reverse-bias
346:
343:forward-bias
338:
334:
331:
312:
292:
277:
248:
244:
242:
116:
107:
97:
90:
83:
76:
64:
52:Please help
47:verification
44:
1930:Transformer
1672:Sutton tube
1512:Charge pump
1365:Memory cell
1295:Zener diode
1257:Laser diode
1140:transistors
1022:transistors
873:. p. 7
738:. p. 6
253:solid-state
2040:Rectifiers
2024:Categories
2002:reed relay
1992:Parametron
1925:Thermistor
1903:resettable
1862:Connector
1823:Adjustable
1799:Nixie tube
1769:Crossatron
1736:Trochotron
1711:Iconoscope
1706:Charactron
1683:X-ray tube
1555:Compactron
1535:Acorn tube
1492:Buck–boost
1413:Solaristor
1275:Photodiode
1252:Gunn diode
1248:(CLD, CRD)
1030:Transistor
720:2018-07-27
626:References
458:triggering
345:ed, while
80:newspapers
1965:Capacitor
1809:Trigatron
1804:Thyratron
1794:Neon lamp
1721:Monoscope
1601:Phototube
1585:Pentagrid
1550:Barretter
1435:Trancitor
1430:Thyristor
1355:Memristor
1280:PIN diode
1057:(ChemFET)
661:0096-8390
264:thyristor
1987:Inductor
1957:Reactive
1935:Varistor
1915:Resistor
1893:Antifuse
1779:Ignitron
1774:Dekatron
1662:Klystron
1651:Gyrotron
1580:Nuvistor
1497:Split-pi
1383:(MOS IC)
1350:Memistor
1108:(MuGFET)
1102:(MOSFET)
1074:(FinFET)
877:12 April
742:12 April
715:BBC News
669:51673404
574:See also
177:Invented
1888:Ferrite
1856:Passive
1847:Varicap
1835:digital
1784:Krytron
1606:Tetrode
1591:Pentode
1445:Varicap
1426:(3D IC)
1402:RF CMOS
1306:devices
1080:(FGMOS)
1011:devices
794:RF Cafe
605:Snubber
357:, then
256:current
212:cathode
163:
94:scholar
1920:Switch
1611:Triode
1575:Nonode
1540:Audion
1420:(SITh)
1304:Other
1271:(OLED)
1233:Diodes
1184:(LET)
1166:(FET)
1138:Other
1086:(IGBT)
1063:(CMOS)
1050:BioFET
1045:BiCMOS
900:
852:
815:
692:
667:
659:
471:biased
295:TRIACs
193:, 1957
154:Active
96:
89:
82:
75:
67:
1997:Relay
1970:types
1908:eFUSE
1679:(TWT)
1667:Maser
1658:(IOT)
1647:(CFA)
1636:(BWO)
1560:Diode
1507:SEPIC
1487:Boost
1440:TRIAC
1409:(SCR)
1372:(MOV)
1346:(LEC)
1265:(LED)
1224:(UJT)
1213:(SIT)
1207:(PUT)
1150:(BJT)
1119:(TFT)
1095:LDMOS
1090:ISFET
928:(PDF)
775:(PDF)
665:S2CID
564:TRIAC
204:Anode
101:JSTOR
87:books
1940:Wire
1898:Fuse
1482:Buck
1335:(IC)
1323:DIAC
1259:(LD)
1128:UMOS
1123:VMOS
1040:PMOS
1035:NMOS
1020:MOS
898:ISBN
879:2014
850:ISBN
813:ISBN
744:2014
690:ISBN
657:ISSN
615:DIAC
427:ASCR
341:are
337:and
286:and
210:and
208:gate
150:Type
73:news
1502:Ćuk
649:doi
620:BJT
402:off
391:off
349:is
247:or
56:by
2026::
1876:RF
1625:RF
792:.
713:.
663:.
655:.
645:44
643:.
562:A
473:.
456:dt
452:dv
436:.
416:BR
393::
384:ON
380:ON
367:J2
363:J2
359:J2
355:J2
347:J2
339:J3
335:J1
284:n-
243:A
206:,
1627:)
1623:(
993:e
986:t
979:v
948:.
939:.
906:.
881:.
858:.
821:.
746:.
723:.
698:.
671:.
651::
504:s
500:s
454:/
172:)
123:)
117:(
112:)
108:(
98:·
91:·
84:·
77:·
50:.
20:)
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