Silicon carbide - Knowledge

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However, there have been certain procedures that have been performed and studied that could potentially yield methods that use lower temperatures to help manufacture graphene. More specifically this different approach to graphene growth has been observed to produce graphene within a temperature environment of around 750 °C. This method entails the combination of certain methods like chemical vapor deposition (CVD) and surface segregation. And when it comes to the substrate, the procedure would consist of coating a SiC substrate with thin films of a transition metal. And after the rapid heat treating of this substance, the carbon atoms would then become more abundant at the surface interface of the transition metal film which would then yield graphene. And this process was found to yield graphene layers that were more continuous throughout the substrate surface.

1310: 2302:. One of the reasons for this investigation is that, Zircaloy experiences hydrogen embrittlement as a consequence of the corrosion reaction with water. This produces a reduction in fracture toughness with increasing volumetric fraction of radial hydrides. This phenomenon increases drastically with increasing temperature to the detriment of the material. Silicon carbide cladding does not experience this same mechanical degradation, but instead retains strength properties with increasing temperature. The composite consists of SiC fibers wrapped around a SiC inner layer and surrounded by an SiC outer layer. Problems have been reported with the ability to join the pieces of the SiC composite. 1663: 7762: 1727: 328: 193: 531: 2311: 925: 8991: 7744: 678: 2375: 1823: 8955: 47: 1117: 1044: 7753: 1279: 1270: 1109: 8979: 8967: 778: 1288: 2188: 2105: 1321:, silicon carbide in a glassy amorphous form is also produced. The polymorphism of SiC is characterized by a large family of similar crystalline structures called polytypes. They are variations of the same chemical compound that are identical in two dimensions and differ in the third. Thus, they can be viewed as layers stacked in a certain sequence. 683: 2358:, sharper facets, and good resilience. Loose moissanite stones may be placed directly into wax ring moulds for lost-wax casting, as can diamond, as moissanite remains undamaged by temperatures up to 1,800 °C (3,270 °F). Moissanite has become popular as a diamond substitute, and may be misidentified as diamond, since its 1168:. Colorless, pale yellow and green crystals have the highest purity and are found closest to the resistor. The color changes to blue and black at greater distance from the resistor, and these darker crystals are less pure. Nitrogen and aluminium are common impurities, and they affect the electrical conductivity of SiC. 1649:, as is 6H-SiC:B. Thus the superconducting properties seem to depend more on dopant (B vs. Al) than on polytype (3C- vs 6H-). In an attempt to explain this dependence, it was noted that B substitutes at C sites in SiC, but Al substitutes at Si sites. Therefore, Al and B "see" different environments, in both polytypes. 2494:

When it comes to understanding how or when to use these methods of graphene production, most of them mainly produce or grow this graphene on the SiC within a growth enabling environment. It is utilized most often at rather higher temperatures (such as 1,300 °C) because of SiC thermal properties.

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Another way of growing graphene would be thermally decomposing SiC at a high temperature within a vacuum. But, this method turns out to yield graphene layers that contain smaller grains within the layers. So, there have been efforts to improve the quality and yield of graphene. One such method is to

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A major problem for SiC commercialization has been the elimination of defects: edge dislocations, screw dislocations (both hollow and closed core), triangular defects and basal plane dislocations. As a result, devices made of SiC crystals initially displayed poor reverse blocking performance, though

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Silicon carbide is used in the manufacturing of fishing guides because of its durability and wear resistance. Silicon Carbide rings are fit into a guide frame, typically made from stainless steel or titanium which keep the line from touching the rod blank. The rings provide a low friction surface

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When it comes to its production, silicon is used primarily as a substrate to grow the graphene. But there are actually several methods that can be used to grow the graphene on the silicon carbide. The confinement controlled sublimation (CCS) growth method consists of a SiC chip that is heated under

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chips rated for 650 volts each. Silicon carbide in this instance gave Tesla a significant advantage over chips made of silicon in terms of size and weight. A number of automobile manufacturers are planning to incorporate silicon carbide into power electronic devices in their products. A significant

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of silicon terminated SiC in an atmosphere consisting of argon. This method has proved to yield layers of graphene with larger domain sizes than the layer that would be attainable via other methods. This new method can be very viable to make higher quality graphene for a multitude of technological

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Silicon carbide fibers are used to measure gas temperatures in an optical technique called thin-filament pyrometry. It involves the placement of a thin filament in a hot gas stream. Radiative emissions from the filament can be correlated with filament temperature. Filaments are SiC fibers with a

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and rendered conductive when lightning raises the voltage of the power line conductor, thus effectively connecting the SiC column between the power conductor and the earth. Spark gaps used in lightning arresters are unreliable, either failing to strike an arc when needed or failing to turn off

2511:. Such a device is a fundamental resource for many emerging applications of quantum information science. If one pumps a color center via an external optical source or electric current, the color center will be brought to the excited state and then relax with the emission of one photon. 1933:

to the line raises the line voltage sufficiently, the SiC column will conduct, allowing strike current to pass harmlessly to the earth instead of along the power line. The SiC columns proved to conduct significantly at normal power-line operating voltages and thus had to be placed

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technique. Carborundum grit is applied in a paste to the surface of an aluminium plate. When the paste is dry, ink is applied and trapped in its granular surface, then wiped from the bare areas of the plate. The ink plate is then printed onto paper in a rolling-bed press used for

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rated at 1,200 V were introduced to the market, followed in 2011 by the first commercial MOSFETs rated at 1200 V. JFETs are now available rated 650 V to 1,700 V with resistance as low as 25 mΩ. Beside SiC switches and SiC Schottky diodes (also Schottky barrier diode,

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afterwards, in the latter case due to material failure or contamination by dust or salt. Usage of SiC columns was originally intended to eliminate the need for the spark gap in lightning arresters. Gapped SiC arresters were used for lightning-protection and sold under the

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Emtsev, Konstantin V.; Bostwick, Aaron; Horn, Karsten; Jobst, Johannes; Kellogg, Gary L.; Ley, Lothar; McChesney, Jessica L.; Ohta, Taisuke; Reshanov, Sergey A. (2009-02-08). "Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide".

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was discovered. Development of this laboratory-produced composite to a commercial product took only three years. In 1985, the first commercial cutting tools made from this alumina and silicon carbide whisker-reinforced composite were introduced into the market.

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diameter of 15 micrometers, about one fifth that of a human hair. Because the fibers are so thin, they do little to disturb the flame and their temperature remains close to that of the local gas. Temperatures of about 800–2,500 K can be measured.

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and furnace parts. Silicon carbide does not melt but begins to sublimate near 2,700 °C like graphite, having an appreciable vapor pressure near that temp. It is also highly inert chemically, partly due to the formation of a thin passivated layer of

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Carborundum grit is also used in stone Lithography. Its uniform particle size allows it to be used to "Grain" a stone which removes the previous image. In a similar process to sanding, coarser grit Carborundum is applied to the stone and worked with a

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gas ambient at 2,500 °C and redeposited into flake-like single crystals, sized up to 2 × 2 cm, at a slightly colder substrate. This process yields high-quality single crystals, mostly of 6H-SiC phase (because of high growth temperature).

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Silicon carbide is used as a support and shelving material in high temperature kilns such as for firing ceramics, glass fusing, or glass casting. SiC kiln shelves are considerably lighter and more durable than traditional alumina shelves.

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researchers have been tentatively finding solutions to improve the breakdown performance. Apart from crystal quality, problems with the interface of SiC with silicon dioxide have hampered the development of SiC-based power MOSFETs and

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Juang, Zhen-Yu; Wu, Chih-Yu; Lo, Chien-Wei; Chen, Wei-Yu; Huang, Chih-Fang; Hwang, Jenn-Chang; Chen, Fu-Rong; Leou, Keh-Chyang; Tsai, Chuen-Horng (2009-07-01). "Synthesis of graphene on silicon carbide substrates at low temperature".

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The natural resistance to oxidation exhibited by silicon carbide, as well as the discovery of new ways to synthesize the cubic β-SiC form, with its larger surface area, has led to significant interest in its use as a heterogeneous

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Davidsson, J.; Ivády, V.; Armiento, R.; Son, N.T.; Gali, A.; Abrikosov, I. A. (2018). "First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC".

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vacuum with graphite. Then the vacuum is released very gradually to control the growth of graphene. This method yields the highest quality graphene layers. But other methods have been reported to yield the same product as well.

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or AGG. The growth of abnormally long silicon carbide grains may serve to impart a toughening effect through crack-wake bridging, similar to whisker reinforcement. Similar AGG-toughening effects have been reported in

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Petrovsky, Gury Timofeevic; Tolstoy, Michael N.; Lubarsky, Sergey V.; Khimitch, Yuri P.; Robb, Paul N. (June 1994). Stepp, Larry M. (ed.). "2.7-meter-diameter silicon carbide primary mirror for the SOFIA telescope".

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Chen, H.; Raghothamachar, Balaji; Vetter, William; Dudley, Michael; Wang, Y.; Skromme, B.J. (2006). "Effects of Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial Layer".

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The outer thermal protection layer of NASA's LOFTID inflatable heat shield incorporates a woven ceramic made from silicon carbide, with fiber of such small diameter that it can be bundled and spun into a yarn.

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has been detected in 3C-SiC:Al, 3C-SiC:B and 6H-SiC:B at similar temperatures ~1.5 K. A crucial difference is however observed for the magnetic field behavior between aluminium and boron doping: 3C-SiC:Al is

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References to silicon carbide heating elements exist from the early 20th century when they were produced by Acheson's Carborundum Co. in the U.S. and EKL in Berlin. Silicon carbide offered increased

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which favors light emission. However, SiC is still one of the important LED components: It is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

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at relatively low temperatures. Relative to the CVD process, the pyrolysis method is advantageous because the polymer can be formed into various shapes prior to thermalization into the ceramic.

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Lohrmann, A.; Iwamoto, N.; Bodrog, Z.; Castalletto, S.; Ohshima, T.; Karle, T.J.; Gali, A.; Prawer, S.; McCallum, J.C.; Johnson, B.C. (2015). "Single-photon emitting diode in silicon carbide".

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The first use of SiC was as an abrasive. This was followed by electronic applications. In the beginning of the 20th century, silicon carbide was used as a detector in the first radios. In 1907

511: 1347:), is formed at temperatures below 1,700 °C. Until recently, the beta form has had relatively few commercial uses, although there is now increasing interest in its use as a support for 4530: 982:, and examples of this stardust have been found in pristine condition in primitive (unaltered) meteorites. The silicon carbide found in space and in meteorites is almost exclusively the 5647: 2076:

may have a higher power density than silicon power devices and are able to handle higher temperatures exceeding the silicon limit of 150 °C. New die attach technologies such as

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Gate drive: SiC devices often require gate drive voltage levels that are different from their silicon counterparts and may be even unsymmetric, for example, +20 V and −5 V.

682: 4994: 967:, after whom the material was named in 1905. Moissan's discovery of naturally occurring SiC was initially disputed because his sample may have been contaminated by silicon carbide 2062: 2354:

of the crystal to minimize birefringent effects. It is lighter (density 3.21 g/cm vs. 3.53 g/cm), and much more resistant to heat than diamond. This results in a stone of higher

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de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna (July 2007). "Epitaxial graphene".

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Morkoç, H.; Strite, S.; Gao, G. B.; Lin, M. E.; Sverdlov, B.; Burns, M. (1994). "Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies".

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SiC can also be made into wafers by cutting a single crystal either using a diamond wire saw or by using a laser. SiC is a useful semiconductor used in power electronics.

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and carbon dioxide. This can be used to make the glaze foam and crater due to the evolved carbon dioxide gas, or to reduce the colorant oxides and achieve colors such as

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in diamond. In 4H-SiC, the divacancy has four different configurations which correspond to four zero-phonon lines (ZPL). These ZPL values are written using the notation V

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O'Sullivan, D.; Pomeroy, M.J.; Hampshire, S.; Murtagh, M.J. (2004). "Degradation resistance of silicon carbide diesel particulate filters to diesel fuel ash deposits".

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and a very slight green or yellow fluorescence under ultraviolet light. Some moissanite stones also have curved, string-like inclusions, which diamonds never have.

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by which SiC is still made today and formed the Carborundum Company to manufacture bulk SiC, initially for use as an abrasive. In 1900 the company settled with the

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produced the first LED by applying a voltage to a SiC crystal and observing yellow, green and orange emission at the cathode. The effect was later rediscovered by

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in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.

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is closer to diamond than any other substitute. Many thermal diamond-testing devices cannot distinguish moissanite from diamond, but the gem is distinct in its

2065:(CIPS) report regularly about the technological progress of SiC power devices. Major challenges for fully unleashing the capabilities of SiC power devices are: 8606: 7934: 7875: 7783: 7440: 6285: 3953: 8695: 8511: 8446: 8386: 8314: 8220: 8114: 7984: 7939: 7610: 7322: 7238: 7140: 6184: 2610: 718: 8775: 2255:

containment material. It is also used in producing radiation detectors for monitoring radiation levels in nuclear facilities, environmental monitoring, and

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blades or nozzle vanes. However, none of these projects resulted in a production quantity, mainly because of its low impact resistance and its low fracture

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yields even larger single crystals of 4 inches (10 cm) in diameter, having a section 81 times larger compared to the conventional Lely process.

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Singh, S. K.; Parida, K. M.; Mohanty, B. C.; Rao, S. B. (1995). "High surface area silicon carbide from rice husk: A support material for catalysts".

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spacecraft subsystems are mounted on a rigid silicon carbide frame, which provides a stable structure that will not expand or contract due to heat.

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Lely, Jan Anthony (1955). "Darstellung von Einkristallen von Silicium Carbid und Beherrschung von Art und Menge der eingebauten Verunreinigungen".

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Di Pierro S.; Gnos E.; Grobety B.H.; Armbruster T.; Bernasconi S.M. & Ulmer P. (2003). "Rock-forming moissanite (natural α-silicon carbide)".

2287:. A layer of silicon carbide gives coated fuel particles structural support and is the main diffusion barrier to the release of fission products. 1214:(CVD) of silane, hydrogen and nitrogen. Homoepitaxial and heteroepitaxial SiC layers can be grown employing both gas and liquid phase approaches. 8190: 7519: 4523: 4422:"At 1200 V and 45 milliohms, SemiSouth introduces the industry's lowest resistance SiC power transistor for efficient power management" 706: 7860: 1814:

was mentioned as a way to produce a new strong and plastic alloy suitable for use in aeronautics, aerospace, automobile and micro-electronics.

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Pitcher, M. W.; Joray, S. J.; Bianconi, P. A. (2004). "Smooth Continuous Films of Stoichiometric Silicon Carbide from Poly(methylsilyne)".

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at temperatures in the range 1,000–1,100 °C. Precursor materials to obtain silicon carbide in such a manner include polycarbosilanes,

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meteorite, has revealed anomalous isotopic ratios of carbon and silicon, indicating that these grains originated outside the solar system.

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Zhong, Y.; Shaw, Leon L.; Manjarres, Misael & Zawrah, Mahmoud F. (2010). "Synthesis of Silicon Carbide Nanopowder Using Silica Fume".

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Hanaor, Dorian A.H.; Xu, Wanqiang; Ferry, Michael; Sorrell, Charles C. (2012). "Abnormal grain growth of rutile TiO2 induced by ZrSiO4".

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Because natural moissanite is extremely scarce, most silicon carbide is synthetic. Silicon carbide is used as an abrasive, as well as a

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Chen, Z.; Ahyi, A.C.; Zhu, X.; Li, M.; Isaacs-Smith, T.; Williams, J.R.; Feldman, L.C. (2010). "MOS Characteristics of C-Face 4H-SiC".

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López-Honorato, E.; Tan, J.; Meadows, P. J.; Marsh, G.; Xiao, P. (2009). "TRISO coated fuel particles with enhanced SiC properties".

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full SiC power module, in its Model 3. ... STMicroelectronics ... Tesla inverter ... 24 1-in-1 power modules ... module contains two

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particles in plant material (e.g. rice husks) can be converted to SiC by heating in the excess carbon from the organic material. The

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when a judge's decision gave "priority broadly" to its founders "for reducing ores and other substances by the incandescent method".

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in 1891. Acheson was attempting to prepare artificial diamonds when he heated a mixture of clay (aluminium silicate) and powdered

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Resonant Behaviour of Pulse Generators for the Efficient Drive of Optical Radiation Sources Based on Dielectric Barrier Discharges

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Ruan, Ming; Hu, Yike; Guo, Zelei; Dong, Rui; Palmer, James; Hankinson, John; Berger, Claire; Heer, Walt A. de (December 2012).

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Bunsell, A. R.; Piant, A. (2006). "A review of the development of three generations of small diameter silicon carbide fibres".

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Castelletto, Stefania; Johnson, Brett; Iv{\'a}dy, Viktor; Stavrias, Nicholas; Umeda, T; Gali, Adam; Ohshima, Takeshi (2014).

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Studt, P. (1987). "Influence of lubricating oil additives on friction of ceramics under conditions of boundary lubrication".

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at which point their resistance must drop to a lower level and maintain this level until the applied voltage drops below V

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The low thermal expansion coefficient, high hardness, rigidity and thermal conductivity make silicon carbide a desirable

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compared with metallic heaters. Silicon carbide elements are used today in the melting of glass and non-ferrous metal,

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In the 1980s and 1990s, silicon carbide was studied in several research programs for high-temperature gas turbines in

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Bertolino, Meyer, G. (2002). "Degradation of the mechanical properties of Zircaloy-4 due to hydrogen embrittlement".

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which improves casting distance while providing adequate hardness that prevents abrasion from braided fishing line.

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because of its chemical properties that promote the production of graphene on the surface of SiC nanostructures.

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Bakin, Andrey S. (2006). "SiC Homoepitaxy and Heteroepitaxy". In M. Shur; S. Rumyantsev; M. Levinshtein (eds.).

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One well known point defect in silicon carbide is the divacancy which has a similar electronic structure as the

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Neumeier, J.J.; Shvyd'ko, Y.V.; Haskel, Daniel (2024). "Thermal expansion of 4H and 6H SiC from 5 K to 340 K".

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providing advantages for fast, high-temperature and/or high-voltage devices. The first devices available were

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in the temperature range 5 K to 340 K that would cause discontinuities in the thermal expansion coefficient.

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temperatures and adjust the carbon and silicon content. Silicon carbide is cheaper than a combination of

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Zheng, Qiye; Li, Chunhua; Rai, Akash; Leach, Jacob H.; Broido, David A.; Cahill, David G. (2019-01-03).

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at a high temperature, between 1,600 °C (2,910 °F) and 2,500 °C (4,530 °F). Fine SiO

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were based on SiC. Yellow LEDs made from 3C-SiC were manufactured in the Soviet Union in the 1970s and

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due to the durability and low cost of the material. In manufacturing, it is used for its hardness in

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Bhatnagar, M.; Baliga, B.J. (March 1993). "Comparison of 6H-SiC, 3C-SiC, and Si for power devices".

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increase in production of silicon carbide is projected, beginning with a large plant opened 2022 by

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that are widely used in applications requiring high endurance, such as car brakes, car clutches and

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Kriener, M.; Muranaka, Takahiro; Kato, Junya; Ren, Zhi-An; Akimitsu, Jun; Maeno, Yoshiteru (2008).

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are required to efficiently get the heat out of the devices and ensure a reliable interconnection.

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for making silicon carbide powder on February 28, 1893. Acheson also developed the electric batch

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between 2.65 and 2.69 (compared to 2.42 for diamond). Moissanite is somewhat harder than common

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The material formed in the Acheson furnace varies in purity, according to its distance from the

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Laine, Richard M.; Babonneau, Florence (1993). "Preceramic polymer routes to silicon carbide".

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Nippon Steel Technical Report no. 84 : Large high-quality silicon carbide substrates

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Silicon carbide exists in about 250 crystalline forms. Through inert atmospheric pyrolysis of

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Tiegs, Terry (2005). "Chapter 13: Whisker Reinforced Alumina". In Bansal, Narottam P. (ed.).

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SiC is used in crucibles for holding melting metal in small and large foundry applications.

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Muranaka, T.; Kikuchi, Yoshitake; Yoshizawa, Taku; Shirakawa, Naoki; Akimitsu, Jun (2008).

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Non-systematic, less-recognized and often unverified syntheses of silicon carbide include:

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While rare on Earth, silicon carbide is remarkably common in space. It is a common form of

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The high sublimation temperature of SiC (approximately 2,700 °C) makes it useful for

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density make it more promising than silicon for high-powered devices. SiC has a very low

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brand names, among others. The gapped SiC arrester has been largely displaced by no-gap

327: 192: 150: 9317: 9292: 9110: 8971: 8893: 8863: 8808: 8685: 8661: 8160: 8094: 7959: 7919: 7770: 7733: 7693: 7672: 7615: 7590: 7466: 7458: 7450: 6614: 6521: 6234: 6195: 6167: 6017: 5956: 5852: 5629: 5603: 5534: 5500: 5473: 5374: 5340: 5251: 5169: 4870:"SiC detectors: A review on the use of silicon carbide as radiation detection material" 4688: 4403: 4360: 4128: 4013: 3987: 3829: 3820: 3796: 3772: 3763: 3741: 3729: 3646: 3598: 3540: 3531: 3507: 3366: 3323: 3046: 2815: 2291: 2284: 2008: 1899: 1839: 1675: 1550:

Pure SiC is colorless. The brown to black color of the industrial product results from

1226: 1089: 1078: 949: 948:. Virtually all the silicon carbide sold in the world, including moissanite jewels, is 4979: 3593: 3576: 2507:. These defects can produce single photons on demand and thus serve as a platform for 1726: 1694:. SiC provides a much sharper and harder alternative for sand blasting as compared to 9297: 9155: 9135: 8918: 8501: 8401: 8371: 8289: 8029: 7914: 7870: 7818: 7625: 7620: 7552: 6974: 6927: 6438: 6431: 6393: 6200: 6191: 5936: 5805: 5725: 5674: 5538: 5526: 5465: 5418: 5366: 5313: 5305: 5243: 5132: 5080: 4798: 4773: 4692: 4620: 4476: 4352: 4279: 4252: 4225: 4198: 4177: 4132: 3888: 3878: 3834: 3777: 3650: 3602: 3545: 3432: 3370: 3278: 3213: 3188: 3103: 3077: 3050: 2870: 2819: 2694: 2638: 2176: 2173: 1687: 1637: 1332: 1200: 463: 7504: 5477: 5378: 5255: 5173: 4640: 4407: 4327:

Madar, Roland (26 August 2004). "Materials science: Silicon carbide in contention".

4017: 3327: 9127: 9105: 9089: 9081: 8995: 8983: 8903: 8803: 8708: 8656: 8089: 7964: 7929: 7850: 7838: 7798: 7703: 7636: 7298: 6537: 6116: 6063: 5819: 5695: 5633: 5621: 5573: 5518: 5457: 5410: 5358: 5295: 5287: 5235: 5161: 5032: 4975: 4952: 4889: 4763: 4755: 4680: 4395: 4364: 4344: 4309: 4173: 4120: 4009: 4005: 3824: 3816: 3767: 3759: 3710: 3638: 3588: 3535: 3527: 3485: 3393: 3358: 3315: 3164: 3073: 3038: 2961: 2807: 2428: 2416: 2339: 2248: 2191:

Test flame and glowing SiC fibers. The flame is about 7 cm (2.8 in) tall.

1930: 1895: 1878:. It is also used as an oil additive to reduce friction, emissions, and harmonics. 1771: 1731: 1595: 1242: 1129: 898: 824: 487: 404: 4995:"Assessment of Silicon Carbide Cladding for High Performance Light Water Reactors" 4956: 3141: 2834: 2503:

Silicon carbide can host point defects in the crystal lattice, which are known as

1132:

of gem quality. The simplest process to manufacture silicon carbide is to combine

9209: 9143: 9097: 9073: 9060: 8591: 8566: 8104: 8044: 7828: 7728: 7713: 7605: 7595: 6456: 6410: 6386: 6162: 6141: 6132: 6121: 5944: 5928: 5668: 5435: 5414: 5126: 5060: 4792: 4614: 4547: 4273: 4246: 3868: 3577:"Thermal conductivity of GaN, $ ^{71}\mathrm{GaN}$ , and SiC from 150 K to 850 K" 3426: 3272: 3255: 3182: 3097: 2864: 2548: 2419:. This form has already been employed as a catalyst support for the oxidation of 2256: 2137: 1992: 1792: 1710: 1695: 1563: 1165: 1144: 1074: 593: 258: 219: 5490: 2310: 2043:

packages, companies started even earlier to implement the bare chips into their

924: 9256: 9251: 9115: 9065: 8828: 8793: 8576: 8466: 8431: 8416: 8351: 8346: 8245: 8145: 8064: 8039: 8004: 7949: 7924: 7793: 7641: 5625: 4794:

Industrial heating: principles, techniques, materials, applications, and design

3642: 3029:

Vlasov, A.S.; et al. (1991). "Obtaining silicon carbide from rice husks".

2771: 2487: 2343: 2215: 2089: 2036: 1996: 1971:

Silicon carbide was the first commercially important semiconductor material. A

1843: 1783: 1775: 1583: 1428: 1229:

and polysilazanes. Silicon carbide materials obtained through the pyrolysis of

769: 585: 5767: 5741: 5578: 5553: 5551: 5362: 4909: 4399: 4146: 3853: 3411: 3362: 2606: 881:, but has been mass-produced as a powder and crystal since 1893 for use as an 629: 581: 9286: 9261: 8858: 8713: 8596: 8571: 8552: 8496: 8376: 8334: 8329: 8069: 8059: 8019: 7894: 7788: 7743: 7718: 7600: 7580: 5422: 5370: 5309: 5247: 4894: 4869: 4313: 2986: 2903: 2547:

applied to ceramics. At high temperatures it can reduce metal oxides forming

2544: 2403: 2363: 2252: 2085: 1988: 1972: 1767: 1746: 1607: 1344: 1125: 1017:

Robert Sydney Marsden's dissolution of silica in molten silver in a graphite

964: 894: 874: 597: 443: 181: 5213:"Epitaxial graphene on silicon carbide: Introduction to structured graphene" 3892: 2811: 2789: 2719: 2402:

and carbon, produces cleaner steel and lower emissions due to low levels of

605: 8934: 8788: 8641: 8581: 8561: 8533: 8461: 8341: 8324: 8279: 8230: 8135: 7855: 7808: 7656: 6366: 6207: 5592: 5530: 5469: 5437: 5317: 4777: 4495: 4356: 3838: 3781: 3549: 3319: 2399: 2347: 2276: 2223: 2222:

production, production of ceramics and electronics components, igniters in

2058: 2044: 1691: 1489: 1180: 1097: 1027:'s heating of a mixture of silicon and silica in a graphite crucible (1881) 1014:'s passing an electric current through a carbon rod embedded in sand (1849) 4992: 4191:

Friedrichs, Peter; Kimoto, Tsunenobu; Ley, Lothar; Pensl, Gerhard (2011).

4124: 705: 9266: 9199: 8908: 8818: 8783: 8750: 8676: 8651: 8491: 8396: 8366: 8250: 8165: 8155: 7885: 7813: 5239: 4759: 2447: 2420: 2219: 1975:"carborundum" (synthetic silicon carbide) detector diode was patented by 1863: 1388: 1152: 1060: 1048: 979: 975: 902: 633: 53: 4707:"Thin-Filament Pyrometry Developed for Measuring Temperatures in Flames" 4589: 4057:"UCLA researchers create exceptionally strong and lightweight new metal" 3397: 2965: 2374: 2334:

in several important respects: it is transparent and hard (9–9.5 on the

1822: 1067:, believing it to be a new compound of carbon and aluminium, similar to 691: 609: 8823: 8765: 8728: 8703: 8601: 8411: 8274: 5920: 5522: 5165: 4993:

Carpenter, David; Ahn, K.; Kao, S.P.; Hejzlar, Pavel; Kazimi, Mujid S.

3042: 2444: 2351: 2315: 2263:

nuclear power and the emerging terrestrial micro nuclear power plants.

2012: 1960: 1851: 1835: 1810:

In December 2015, infusion of silicon carbide nano-particles in molten

1753: 1703: 1615: 1093: 955:

Natural moissanite was first found in 1893 as a small component of the

945: 933: 878: 698: 453: 415: 201: 161: 82: 6039: 5733: 4684: 3714: 3664: 2406:, has a low gas content, and does not lower the temperature of steel. 2125:

was discovered in 1907 using silicon carbide and the first commercial

1594:

of about 2.3 × 10 K near 300 K (for 4H and 6H SiC) and experiences no

9271: 9246: 9230: 9204: 8755: 8620: 8456: 8260: 8140: 7994: 7969: 6397: 5461: 5291: 4768: 3505: 3489: 3428:

Silicon carbide microelectromechanical systems for harsh environments

2690: 2634: 2327: 2161: 2098: 2077: 2027:

has dramatically reduced the defects causing the interface problems.

2024: 1956: 1939: 1871: 1811: 1760: 1699: 1627: 1619: 1328:, and is formed at temperatures greater than 1,700 °C and has a 1222: 968: 937: 886: 573: 5774: 5753:

Mantooth, Alan; Zetterling, Carl-Mikael; Rusu, Ana (28 April 2021).

4348: 1925:, and so columns of SiC pellets were connected between high-voltage 1826:

The Porsche Carrera GT's silicon carbide "carbon-ceramic" disk brake

768:

Except where otherwise noted, data are given for materials in their

8723: 8635: 8436: 8299: 8284: 8255: 8124: 7899: 7723: 7667: 7661: 7630: 7575: 7543: 6179: 6041: 5840: 5608: 5505: 3797:"Superconductivity in compensated and uncompensated semiconductors" 2472: 2323: 2295: 2130: 1671: 1611: 1336: 1204: 1171: 1162: 1159: 1116: 1068: 1063:(carbon) in an iron bowl. He called the blue crystals that formed 1043: 1031: 1018: 941: 882: 664: 31: 9036: 5345: 4194:

Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications

3992: 3746: 2604: 2455:. The result is a print of painted marks embossed into the paper. 1554:

impurities. The rainbow-like luster of the crystals is due to the

657: 129: 9194: 9189: 9183: 8888: 8718: 8671: 8630: 8586: 8528: 8523: 8486: 8476: 8471: 8426: 8421: 8361: 8294: 8185: 8180: 8130: 8009: 7999: 7752: 5968: 4934: 2526:

and the unit eV: hh(1.095), kk(1.096), kh(1.119), and hk(1.150).

2331: 2260: 2244: 1907: 1859: 1855: 1756: 1631: 1472: 1287: 1278: 1269: 1221:

can be used as precursors which form the ceramic product through

960: 890: 866: 699: 589: 433: 245: 4661: 3620: 3002: 2063:

International Conference on Integrated Power Electronics Systems

1698:. Particles of silicon carbide are laminated to paper to create 9040: 8939: 8760: 8742: 8205: 8175: 7677: 6056: 5904: 4730: 2866:

Carbide, nitride, and boride materials synthesis and processing

2573: 2424: 2187: 2157: 2136:

Carbide LED production soon stopped when a different material,

2093: 2040: 2004: 1750: 1738: 1351:, owing to its higher surface area compared to the alpha form. 1324:

Alpha silicon carbide (α-SiC) is the most commonly encountered

1140: 1133: 1108: 901:. Large single crystals of silicon carbide can be grown by the 870: 4298: 458:

Insoluble in water, soluble in molten alkalis and molten iron

7974: 7904: 3906: 2387: 2272: 1742: 1670:

In the arts, silicon carbide is a popular abrasive in modern

1623: 1313:

Silicon carbide, image taken under a stereoscopic microscope.

1192: 905:

and they can be cut into gems known as synthetic moissanite.

857: 645: 559: 269: 141: 119: 5151: 2907:"Production of artificial crystalline carbonaceous material" 1210:

Cubic SiC is usually grown by the more expensive process of

833: 311: 5552:

Khramtsov, I.A.; Vyshnevyy, A.A.; Fedyanin, D. Yu. (2018).

4819:"NASA Inflatable Heat Shield Finds Strength in Flexibility" 3452:

Additive Manufacturing of Ceramics from Preceramic Polymers

3297: 2391: 2055: 2031: 2000: 1902:

in electric power systems. These devices must exhibit high

1867: 1551: 1136: 839: 755: 4731:

Maun, Jignesh D.; Sunderland, P. B.; Urban, D. L. (2007).

3730:"Superconductivity in heavily boron-doped silicon carbide" 3727: 3383: 1582:

in electronics, where its high thermal conductivity, high

5438:"A silicon carbide room-temperature single-photon source" 5128:

Handbook of commercial catalysts: heterogeneous catalysts

2104: 1979:

in 1906. It found much early use in shipboard receivers.

1943: 848: 448:

2,830 °C (5,130 °F; 3,100 K) (decomposes)

4999:

Nuclear Fuel Cycle Program, Volume MIT-NFC-TR-098 (2007)

4496:

Horio, Masafumi; Iizuka, Yuji; Ikeda, Yoshinari (2012).

3954:"Dragon Skin – Most Protective Body Armor – Lightweight" 2092:

in the drive unit use 24 pairs of silicon carbide (SiC)

5268: 2767:"Nouvelles recherches sur la météorité de Cañon Diablo" 2350:. For this reason, moissanite jewels are cut along the 1948: 936:

is found in only minute quantities in certain types of

5752: 5029:

Nuclear Fabrication Consortium, nuclearfabrication.org

4524:

STMicroelectronics SiC Module in Tesla Model3 Inverter

4446:(Press release). Cree. 17 January 2011. Archived from 3467: 3003:

Hart, Jeffrey A.; Stefanie Ann Lenway; Thomas Murtha.

2266: 2247:

absorption capability, it is used as fuel cladding in

2050:

SiC SBD diodes found wide market spread being used in

885:. Grains of silicon carbide can be bonded together by 30:"Carborundum" redirects here. Not to be confused with 7534: 4790: 4733:"Thin-filament pyrometry with a digital still camera" 3180: 2611:

National Institute for Occupational Safety and Health

1120:

Two six-inch (≈ 15 cm) wafers made of silicon carbide

1030:

Albert Colson's heating of silicon under a stream of

851: 830: 827: 428:

Yellow to green to bluish-black, iridescent crystals

5330: 4275:

Transmission and distribution electrical engineering

3977: 3794: 3508:"Superconductivity in carrier-doped silicon carbide" 2543:

Silicon carbide is used as a raw ingredient in some

1894:

The earliest electrical application of SiC was as a

877:, it occurs in nature as the extremely rare mineral 854: 845: 836: 3340: 2294:has been investigated for use as a replacement for 1578:. There is currently much interest in its use as a 908:Electronic applications of silicon carbide such as 842: 5072: 4641:"The Largest Telescope Mirror Ever Put into Space" 4244: 2947: 2172:are already equipped with SiC optics, as well the 5768:"Silicon Carbide: A Power Electronics Revolution" 4271: 3851:Fuster, Marco A. (1997). "Skateboard grip tape", 3212:. Vol. 1. World Scientific. pp. 43–76. 3122: 3095: 2471:Silicon carbide can be used in the production of 9284: 5666: 4969: 3207: 3144:. Nitride-crystals.com. Retrieved on 2013-05-04. 2918:"The Manufacture of Carborundum- a New Industry" 749:TWA 10 mg/m (total) TWA 5 mg/m (resp) 736:TWA 15 mg/m (total) TWA 5 mg/m (resp) 257: 5670:Complete Book of Rod Building and Tackle Making 5124: 4468: 3692: 3574: 3424: 3125:Berichte der Deutschen Keramischen Gesellschaft 1921:It was recognized early on that SiC had such a 1778:), and in ceramic plates in bulletproof vests. 680: 105: 4498:"Packaging Technologies for SiC Power Modules" 3873:. Boston: Kluwer Academic Publishers. p. 3270: 2764: 1987:In 1993, the silicon carbide was considered a 1966: 971:that were already on the market at that time. 653: 9022: 7520: 6025: 5790: 5391: 5210: 4377: 2862: 2835:"The Astrophysical Nature of Silicon Carbide" 2378:Piece of silicon carbide used in steel making 2346:. Unlike diamond, moissanite can be strongly 1766:Like other hard ceramics (namely alumina and 1730:Silicon carbide is used for trauma plates of 1709:In 1982 an exceptionally strong composite of 1657: 5660: 4667:. Advanced Technology Optical Telescopes V. 4612: 4561: 3801:Science and Technology of Advanced Materials 3734:Science and Technology of Advanced Materials 3028: 2271:Silicon carbide is an important material in 1145:Acheson graphite electric resistance furnace 5765: 4428:(Press release). 5 May 2011. Archived from 4217: 3501: 3499: 2996: 2023:. Although the mechanism is still unclear, 1982: 1251: 9029: 9015: 7527: 7513: 6032: 6018: 5797: 5783: 5022: 4587: 3623:Journal of Physics and Chemistry of Solids 3565:. Ioffe Institute Semiconductors Database. 3153: 3005:"A History of Electroluminescent Displays" 2555:otherwise only possible in a fuel powered 2434: 2182: 1749:. The components were intended to replace 1601: 928:Moissanite single crystal (≈ 1 mm in size) 865:), is a hard chemical compound containing 326: 191: 169: 5607: 5577: 5504: 5344: 5299: 4893: 4767: 4643:. European Space Agency. 23 February 2004 4521: 4475:. KIT Scientific Publishing. p. 94. 3991: 3828: 3771: 3745: 3688: 3686: 3592: 3539: 3091: 3089: 3087: 1910:across them reaches a certain threshold V 1339:). The beta modification (β-SiC), with a 293: 4619:. Academic Press. pp. 48, 57, 425. 4555: 4221:Foseco Non-Ferrous Foundryman's Handbook 3616: 3614: 3612: 3496: 2954:Journal of the American Chemical Society 2605:NIOSH Pocket Guide to Chemical Hazards. 2373: 2309: 2186: 2103: 1870:cars. Silicon carbide is also used in a 1821: 1725: 1661: 1511:@300 K (see for temp. dependence) 1308: 1179:Pure silicon carbide can be made by the 1170: 1115: 1112:Synthetic SiC crystals ~3 mm in diameter 1107: 1042: 1038: 923: 6040:Salts and covalent derivatives of the 5154:Reaction Kinetics and Catalysis Letters 4224:. Butterworth-Heinemann. pp. 52–. 4197:. John Wiley & Sons. pp. 49–. 3721: 3266: 3264: 3233:AM of Ceramics from Preceramic Polymers 3066:Journal of the American Ceramic Society 2714: 2712: 2710: 2238: 1834:is used for high performance "ceramic" 322: 235: 14: 9285: 6069: 5746:NIOSH Pocket Guide to Chemical Hazards 4867: 4608: 4606: 4536:from the original on December 27, 2020 3683: 3084: 2832: 2682: 2626: 2600: 2598: 2596: 2594: 2466: 2338:, compared to 10 for diamond), with a 1721: 1083:Electric Smelting and Aluminum Company 986:. Analysis of SiC grains found in the 182: 9010: 7508: 7063: 6013: 5804: 5778: 5192:Bircham Gallery, birchamgallery.co.uk 4616:High brightness light emitting diodes 4326: 4163: 3866: 3695:IEEE Transactions on Electron Devices 3609: 3431:. Imperial College Press. p. 3. 3201: 2783: 2720:"Properties of Silicon Carbide (SiC)" 2686:CRC Handbook of Chemistry and Physics 2630:CRC Handbook of Chemistry and Physics 2622: 2620: 2529: 1055:Wide-scale production is credited to 919: 354:Key: HBMJWWWQQXIZIP-UHFFFAOYSA-N 149: 5726:"A Brief History of Silicon Carbide" 5667:C. Boyd Pfeiffer (15 January 2013). 4414: 4034:. Ceramic Arts Daily. Archived from 3795:Yanase, Y. & Yorozu, N. (2008). 3261: 3031:Refractories and Industrial Ceramics 2707: 2281:high temperature gas cooled reactors 2275:-coated fuel particles, the type of 1881: 1586:breakdown strength and high maximum 1525:Thermal Expansion Coefficient (10 K) 1002: 5066: 4603: 3563:Silicon Carbide. Thermal properties 3461: 2657: 2591: 2409: 2369: 2267:Nuclear fuel particles and cladding 2205: 2164:telescopes. The growth technology ( 1889: 1866:and some specific high-performance 1817: 1527:@300 K (see for temp. dependence) 468:~900 cm/(V⋅s) (all polytypes) 361:Key: HBMJWWWQQXIZIP-UHFFFAOYAF 248: 24: 8899:Nexus for Exoplanet System Science 5693: 5101:"Silicon carbide (steel industry)" 5054:Casting Metal Directly onto Stones 4522:Barbarini, Elena (June 25, 2018). 3956:. Future Firepower. Archived from 3277:. Academic Press. pp. 20–60. 2617: 2498: 2021:insulated-gate bipolar transistors 1918:flushing current into the ground. 1355:Properties of major SiC polytypes 1286: 1277: 1268: 1263:Structure of major SiC polytypes. 1199:A modified Lely process involving 676: 25: 9359: 8799:Atomic and molecular astrophysics 7536:Molecules detected in outer space 5723: 5717: 4529:(Report). SystemPlus Consulting. 3594:10.1103/PhysRevMaterials.3.014601 2689:(92nd ed.). Boca Raton, FL: 2633:(92nd ed.). Boca Raton, FL: 2538: 2229: 2133:(6H-SiC) worldwide in the 1980s. 1241:is most often conducted under an 52:A laboratory-grown synthetic SiC 9226:Graphite intercalation compounds 8989: 8977: 8965: 8954: 8953: 7760: 7751: 7742: 4613:Stringfellow, Gerald B. (1997). 3181:Byrappa, K.; Ohachi, T. (2003). 3154:Ohtani, N.; et al. (2001). 3078:10.1111/j.1551-2916.2010.03867.x 2845:from the original on May 4, 2017 2683:Haynes, William M., ed. (2011). 2627:Haynes, William M., ed. (2011). 2382:Silicon carbide, dissolved in a 1592:coefficient of thermal expansion 823: 776: 529: 45: 8924:Polycyclic aromatic hydrocarbon 5687: 5640: 5586: 5545: 5484: 5429: 5385: 5324: 5262: 5204: 5180: 5145: 5118: 5093: 5046: 5016: 4986: 4972:Journal of Alloys and Compounds 4963: 4928: 4902: 4861: 4836: 4811: 4797:. CRC Press. pp. 383–393. 4784: 4724: 4699: 4655: 4633: 4581: 4515: 4489: 4462: 4436: 4380:Journal of Electronic Materials 4371: 4320: 4292: 4265: 4238: 4211: 4184: 4157: 4139: 4096: 4067: 4049: 4024: 3971: 3946: 3917: 3907:"Production of Silicon Carbide" 3899: 3860: 3845: 3788: 3665:"Adept Armor - Silicon Carbide" 3657: 3568: 3556: 3445: 3418: 3404: 3377: 3334: 3291: 3242: 3226: 3174: 3147: 3135: 3116: 3057: 3022: 2978: 2941: 2926:. April 7, 1894. Archived from 2910: 2895: 2883: 2856: 2579:Reaction bonded silicon carbide 1610:, which can be doped n-type by 772:(at 25 °C , 100 kPa). 501:2.55 (infrared; all polytypes) 5301:11858/00-001M-0000-0010-FA05-E 4791:Deshmukh, Yeshvant V. (2005). 4010:10.1016/j.jcrysgro.2012.08.015 3925:"Ceramics for turbine engines" 3870:Handbook of Ceramic Composites 3187:. Springer. pp. 180–200. 2826: 2758: 2733: 2676: 2651: 2030:In 2008, the first commercial 1770:), silicon carbide is used in 1217:To form complexly shaped SiC, 13: 1: 8849:Extraterrestrial liquid water 4980:10.1016/S0925-8388(01)01576-6 4957:10.1016/j.jnucmat.2009.03.013 4562:Amos Zeeberg (May 16, 2022). 3099:Properties of silicon carbide 2584: 1977:Henry Harrison Chase Dunwoody 1341:zinc blende crystal structure 1258:Polymorphs of silicon carbide 1103: 723:(US health exposure limits): 5673:. Rowman & Littlefield. 5415:10.1016/j.carbon.2009.03.051 5023:Ames, Nate (June 17, 2010). 4937:Journal of Nuclear Materials 4178:10.1016/0043-1648(87)90208-0 3821:10.1088/1468-6996/9/4/044201 3764:10.1088/1468-6996/9/4/044205 3532:10.1088/1468-6996/9/4/044204 3343:Journal of Materials Science 3102:. IET. p. 19; 170–180. 2984:Dunwoody, Henry H.C. (1906) 2151: 2039:) in the popular TO-247 and 1923:voltage-dependent resistance 1187:), and disilicon carbide (Si 27:Extremely hard semiconductor 7: 9328:Inorganic silicon compounds 8080:Protonated hydrogen cyanide 4251:. CRC Press. p. 1108. 4245:Whitaker, Jerry C. (2005). 2948:Mabery, Charles F. (1900). 2562: 2439:Silicon carbide is used in 1991:in both research and early 1967:Electronic circuit elements 1645:. In contrast, 3C-SiC:B is 1566:that forms on the surface. 1175:Synthetic SiC Lely crystals 1075:Acheson patented the method 10: 9364: 7065: 5333:Solid State Communications 5131:. CRC Press. p. 258. 4272:Bayliss, Colin R. (1999). 3643:10.1016/j.jpcs.2023.111860 3470:Journal of Applied Physics 3096:Harris, Gary Lynn (1995). 2993:(silicon carbide detector) 2305: 2194: 2144:of SiC, whereas GaN has a 2108:Ultraviolet LED (based on 2061:. Conferences such as the 2007:for high-power switching. 1876:diesel particulate filters 1658:Abrasive and cutting tools 1255: 997: 420:40.096 g/mol 29: 9239: 9218: 9176: 9048: 8948: 8839:Earliest known life forms 8834:Diffuse interstellar band 8774: 8694: 8619: 8510: 8445: 8385: 8313: 8305:Protonated cyanoacetylene 8219: 8113: 8075:Protonated carbon dioxide 8035:Hydromagnesium isocyanide 7983: 7769: 7740: 7551: 7542: 6071: 6049: 5868: 5833: 5812: 5766:Asianometry (July 2022). 5579:10.1038/s41534-018-0066-2 5363:10.1016/j.ssc.2007.04.023 4400:10.1007/s11664-010-1096-5 3980:Journal of Crystal Growth 3581:Physical Review Materials 3412:"KABRA｜DISCO Corporation" 3363:10.1007/s10853-006-6566-z 3274:SiC materials and devices 3210:SiC materials and devices 3184:Crystal growth technology 2991:Wireless telegraph system 2889:Encyclopædia Britannica, 2869:. Springer. p. 115. 2839:University College London 2243:Due to SiC's exceptional 2166:chemical vapor deposition 1666:Cutting disks made of SiC 1212:chemical vapor deposition 766: 717: 510: 505: 397: 377: 338: 89: 77: 65: 60: 44: 8884:Iron–sulfur world theory 8879:Photodissociation region 8582:Methyl-cyano-diacetylene 5626:10.1088/1367-2630/aaa752 5125:Rase, Howard F. (2000). 5079:. Elsevier. p. 89. 4895:10.3389/fphy.2022.898833 4469:Meißer, Michael (2013). 4314:10.1557/PROC-0911-B12-03 4248:The electronics handbook 3512:Sci. Technol. Adv. Mater 3425:Cheung, Rebecca (2006). 2664:pubchem.ncbi.nlm.nih.gov 2170:Herschel Space Telescope 2045:power electronic modules 1983:Power electronic devices 1782:, which was produced by 1252:Structure and properties 1235:polymer derived ceramics 568:Precautionary statements 9323:Group IV semiconductors 8959:Category:Astrochemistry 8549:, fullerene, buckyball) 8236:Cyanobutadiynyl radical 8211:Silicon-carbide cluster 8201:Protonated formaldehyde 5728:. University of London. 5648:"The best spinning rod" 5558:npj Quantum Information 5073:O'Donoghue, M. (2006). 4868:Napoli, Marzio (2022). 4844:"Silicon Carbide (SiC)" 4278:. Newnes. p. 250. 3271:Park, Yoon-Soo (1998). 2950:"Notes, On Carborundum" 2812:10.2138/am-2003-11-1223 2765:Moissan, Henri (1904). 2516:nitrogen-vacancy center 2441:carborundum printmaking 2435:Carborundum printmaking 2197:Thin-filament pyrometry 2183:Thin-filament pyrometry 2116: 2101:, in upstate New York. 1832:carbon-carbon composite 1652: 1602:Electrical conductivity 1349:heterogeneous catalysts 1057:Edward Goodrich Acheson 1012:César-Mansuète Despretz 965:Ferdinand Henri Moissan 957:Canyon Diablo meteorite 481:−12.8 × 10 cm/mol 475:Magnetic susceptibility 9038:Inorganic compounds of 8972:Outer space portal 8814:Circumstellar envelope 7779:Aluminium(I) hydroxide 7689:Phosphorus mononitride 7566:Aluminium monofluoride 7561:Aluminium monochloride 5596:New Journal of Physics 4821:. NASA. Archived from 4709:. NASA. Archived from 3458:2019, vol. 27 pp 80-90 3456:Additive Manufacturing 3386:Chemistry of Materials 3320:10.1002/adma.200306467 3239:2019, vol. 27 pp 80–90 3237:Additive Manufacturing 2863:Weimer, A. W. (1997). 2379: 2319: 2226:for gas heaters, etc. 2212:operating temperatures 2192: 2113: 1929:and the earth. When a 1848:Chevrolet Corvette ZR1 1827: 1734: 1667: 1580:semiconductor material 1556:thin-film interference 1444:Lattice constants (Å) 1314: 1291: 1282: 1273: 1237:or PDCs. Pyrolysis of 1176: 1121: 1113: 1052: 992:carbonaceous chondrite 929: 687: 438:3.16 g⋅cm (hex.) 8869:Interplanetary medium 8844:Extraterrestrial life 8482:Octatetraynyl radical 8100:Tricarbon monosulfide 7647:Magnesium monohydride 5493:Nature Communications 4125:10.1557/JMR.2004.0373 3854:U.S. patent 5,622,759 3249:Europe Makes Ceramics 2792:American Mineralogist 2569:Carborundum Universal 2559:in an electric kiln. 2377: 2313: 2190: 2107: 1825: 1788:abnormal grain growth 1729: 1702:and the grip tape on 1665: 1606:Silicon carbide is a 1312: 1290: 1281: 1272: 1174: 1119: 1111: 1046: 1039:Wide-scale production 927: 910:light-emitting diodes 686: 9333:Refractory materials 8996:Chemistry portal 8984:Astronomy portal 8930:RNA world hypothesis 8914:PAH world hypothesis 8607:Heptatrienyl radical 8539:Buckminsterfullerene 8427:Methylcyanoacetylene 7935:Silicon carbonitride 7910:Methylidynephosphane 7876:Magnesium isocyanide 7784:Aluminium isocyanide 7586:Carbon monophosphide 5240:10.1557/mrs.2012.231 4974:. 330–332: 408–413. 4874:Frontiers in Physics 4760:10.1364/AO.46.000483 4505:Fuji Electric Review 4218:Brown, John (1999). 2960:(Part II): 706–707. 2509:single-photon source 2453:intaglio printmaking 2384:basic oxygen furnace 2360:thermal conductivity 2300:light water reactors 2239:Nuclear Applications 1959:that use columns of 1942:. This spark gap is 1830:Silicon-infiltrated 1713:and silicon carbide 1507:Thermal conductivity 1377:Zinc blende (cubic) 1025:Paul Schuetzenberger 932:Naturally occurring 669:(fire diamond) 67:Preferred IUPAC name 9343:Superhard materials 8874:Interstellar medium 8854:Forbidden mechanism 8667:Hydrogen isocyanide 8357:Hexatriynyl radical 7940:c-Silicon dicarbide 7845:Hydrogen isocyanide 7709:Silicon monosulfide 7684:Phosphorus monoxide 7652:Methylidyne radical 7611:Fluoromethylidynium 7571:Aluminium(II) oxide 5618:2018NJPh...20b3035D 5570:2018npjQI...4...15K 5515:2015NatCo...6.7783L 5454:2014NatMa..13..151C 5407:2009Carbo..47.2026J 5355:2007SSCom.143...92D 5284:2009NatMa...8..203E 5232:2012MRSBu..37.1138R 5025:"SiC Fuel Cladding" 4949:2009JNuM..392..219L 4886:2022FrP....10.8833D 4752:2007ApOpt..46..483M 4677:1994SPIE.2199..263P 4450:on 26 November 2016 4392:2010JEMat..39..526C 4341:2004Natur.430..974M 4117:2004JMatR..19.2913O 4002:2012JCrGr.359...83H 3813:2008STAdM...9d4201Y 3756:2008STAdM...9d4205K 3707:1993ITED...40..645B 3635:2024JPCS..18711860N 3524:2008STAdM...9d4204M 3482:1994JAP....76.1363M 3398:10.1021/cm00027a007 3355:2006JMatS..41..823B 3312:2004AdM....16..706P 2987:U.S. patent 837,616 2966:10.1021/ja02048a014 2930:on January 23, 2009 2923:Scientific American 2904:U.S. patent 492,767 2901:Acheson, G. (1893) 2804:2003AmMin..88.1817D 2741:"C&L Inventory" 2467:Graphene production 2123:electroluminescence 2009:Bipolar transistors 1900:lightning arresters 1722:Structural material 1356: 1319:preceramic polymers 1264: 1239:preceramic polymers 1231:preceramic polymers 1219:preceramic polymers 988:Murchison meteorite 41: 9348:Synthetic minerals 9240:Oxides and related 8894:Molecules in stars 8864:Intergalactic dust 8809:Circumstellar dust 8751:Naphthalene cation 8686:Trihydrogen cation 8662:Hydrogen deuteride 8587:Methyltriacetylene 8422:Hexapentaenylidene 8241:E-Cyanomethanimine 8161:Cyclopropenylidene 8095:Tricarbon monoxide 8085:Silicon tricarbide 8055:Methylene amidogen 8045:Isothiocyanic acid 7960:Thioxoethenylidene 7920:Trihydrogen cation 7734:Titanium(II) oxide 7694:Potassium chloride 7673:Sulfur mononitride 7616:Helium hydride ion 7591:Carbon monosulfide 5523:10.1038/ncomms8783 5166:10.1007/BF02071177 5059:2016-09-10 at the 4916:. 30 November 2022 4568:The New York Times 4075:"Top 10 Fast Cars" 3911:siliconcarbide.net 3300:Advanced Materials 3254:2020-08-07 at the 3043:10.1007/bf01287542 2798:(11–12): 1817–21. 2530:Fishing rod guides 2380: 2320: 2292:composite material 2285:Pebble Bed Reactor 2193: 2121:The phenomenon of 2114: 2001:junction-gate FETs 1840:Porsche Carrera GT 1828: 1735: 1678:processes such as 1676:abrasive machining 1668: 1374:Crystal structure 1354: 1315: 1292: 1283: 1274: 1262: 1227:poly(methylsilyne) 1177: 1122: 1114: 1090:Henry Joseph Round 1053: 1051:'s LED experiments 930: 920:Natural occurrence 889:to form very hard 799:Infobox references 758:(Immediate danger) 688: 39: 9313:Diamond simulants 9303:Ceramic materials 9280: 9279: 9004: 9003: 8919:Pseudo-panspermia 8615: 8614: 8562:Cyanodecapentayne 8502:N-Methylformamide 8477:Methyldiacetylene 8402:Aminoacetonitrile 8372:Methyl isocyanate 8290:Methyl isocyanide 8171:Isocyanoacetylene 8151:Cyanoformaldehyde 8030:Hydrogen peroxide 7915:Potassium cyanide 7871:Magnesium cyanide 7824:Disilicon carbide 7819:Dicarbon monoxide 7626:Hydrogen fluoride 7621:Hydrogen chloride 7502: 7501: 7496: 7495: 6007: 6006: 5806:Silicon compounds 5742:"Silicon carbide" 5696:"Silicon carbide" 5680:978-0-7627-9502-4 5226:(12): 1138–1147. 5138:978-0-8493-9417-1 5086:978-0-7506-5856-0 5063:, Jett Industries 5035:on April 25, 2012 4804:978-0-8493-3405-4 4685:10.1117/12.176195 4626:978-0-12-752156-5 4482:978-3-7315-0083-4 4432:on 15 March 2016. 4335:(7003): 974–975. 4285:978-0-7506-4059-6 4258:978-0-8493-1889-4 4231:978-0-08-053187-8 4204:978-3-527-62906-0 4147:"SiC Lubrication" 4111:(10): 2913–2921. 4032:"Silicon Carbide" 3884:978-1-4020-8133-0 3715:10.1109/16.199372 3671:. 6 December 2022 3438:978-1-86094-624-0 3284:978-0-12-752160-2 3219:978-981-256-835-9 3194:978-3-540-00367-0 3109:978-0-85296-870-3 3072:(10): 3159–3167. 3037:(9–10): 521–523. 2876:978-0-412-54060-8 2722:. Ioffe Institute 2693:. p. 4.135. 2660:"Silicon carbide" 2177:space observatory 1882:Foundry crucibles 1688:water-jet cutting 1638:Superconductivity 1596:phase transitions 1560:passivation layer 1548: 1547: 1333:crystal structure 1307: 1306: 1201:induction heating 1047:A replication of 1003:Early experiments 980:carbon-rich stars 899:bulletproof vests 873:. A wide bandgap 817:), also known as 807:Chemical compound 805: 804: 554:Hazard statements 464:Electron mobility 351:InChI=1S/CSi/c1-2 307:CompTox Dashboard 131:Interactive image 16:(Redirected from 9355: 9043:and related ions 9031: 9024: 9017: 9008: 9007: 8994: 8993: 8992: 8982: 8981: 8980: 8970: 8969: 8968: 8957: 8956: 8904:Organic compound 8804:Chemical formula 8709:Dihydroxyacetone 8657:Hydrogen cyanide 8342:Cyanodiacetylene 8196:Propadienylidene 8090:Thioformaldehyde 7965:Titanium dioxide 7930:Sodium hydroxide 7851:Hydrogen sulfide 7839:Hydrogen cyanide 7799:Carbonyl sulfide 7764: 7755: 7746: 7704:Silicon monoxide 7637:Hydroxyl radical 7549: 7548: 7529: 7522: 7515: 7506: 7505: 6407: 6053: 6052: 6034: 6027: 6020: 6011: 6010: 5799: 5792: 5785: 5776: 5775: 5771: 5762: 5749: 5737: 5729: 5711: 5710: 5708: 5706: 5691: 5685: 5684: 5664: 5658: 5657: 5655: 5654: 5644: 5638: 5637: 5611: 5590: 5584: 5583: 5581: 5549: 5543: 5542: 5508: 5488: 5482: 5481: 5462:10.1038/nmat3806 5442:Nature Materials 5433: 5427: 5426: 5401:(8): 2026–2031. 5389: 5383: 5382: 5348: 5328: 5322: 5321: 5303: 5292:10.1038/nmat2382 5272:Nature Materials 5266: 5260: 5259: 5217: 5208: 5202: 5201: 5199: 5198: 5184: 5178: 5177: 5149: 5143: 5142: 5122: 5116: 5115: 5113: 5112: 5103:. Archived from 5097: 5091: 5090: 5070: 5064: 5050: 5044: 5043: 5041: 5040: 5031:. Archived from 5020: 5014: 5013: 5011: 5010: 5001:. Archived from 4990: 4984: 4983: 4967: 4961: 4960: 4932: 4926: 4925: 4923: 4921: 4906: 4900: 4899: 4897: 4865: 4859: 4858: 4856: 4854: 4848:Precise Ceramics 4840: 4834: 4833: 4831: 4830: 4815: 4809: 4808: 4788: 4782: 4781: 4771: 4737: 4728: 4722: 4721: 4719: 4718: 4703: 4697: 4696: 4659: 4653: 4652: 4650: 4648: 4637: 4631: 4630: 4610: 4601: 4600: 4598: 4596: 4590:"Yellow SiC LED" 4588:Klipstein, Don. 4585: 4579: 4578: 4576: 4574: 4559: 4553: 4552: 4543: 4541: 4535: 4528: 4519: 4513: 4512: 4502: 4493: 4487: 4486: 4466: 4460: 4459: 4457: 4455: 4440: 4434: 4433: 4418: 4412: 4411: 4375: 4369: 4368: 4324: 4318: 4317: 4296: 4290: 4289: 4269: 4263: 4262: 4242: 4236: 4235: 4215: 4209: 4208: 4188: 4182: 4181: 4172:(1–2): 185–191. 4161: 4155: 4154: 4143: 4137: 4136: 4100: 4094: 4093: 4091: 4090: 4081:. Archived from 4071: 4065: 4064: 4053: 4047: 4046: 4044: 4043: 4028: 4022: 4021: 3995: 3975: 3969: 3968: 3966: 3965: 3950: 3944: 3943: 3941: 3940: 3931:. Archived from 3921: 3915: 3914: 3903: 3897: 3896: 3864: 3858: 3856: 3849: 3843: 3842: 3832: 3792: 3786: 3785: 3775: 3749: 3725: 3719: 3718: 3690: 3681: 3680: 3678: 3676: 3661: 3655: 3654: 3618: 3607: 3606: 3596: 3572: 3566: 3560: 3554: 3553: 3543: 3503: 3494: 3493: 3490:10.1063/1.358463 3465: 3459: 3449: 3443: 3442: 3422: 3416: 3415: 3408: 3402: 3401: 3381: 3375: 3374: 3338: 3332: 3331: 3295: 3289: 3288: 3268: 3259: 3246: 3240: 3230: 3224: 3223: 3205: 3199: 3198: 3178: 3172: 3171: 3169: 3163:. Archived from 3162: 3151: 3145: 3139: 3133: 3132: 3120: 3114: 3113: 3093: 3082: 3081: 3061: 3055: 3054: 3026: 3020: 3019: 3017: 3016: 3007:. Archived from 3000: 2994: 2989: 2982: 2976: 2975: 2973: 2972: 2945: 2939: 2938: 2936: 2935: 2914: 2908: 2906: 2899: 2893: 2887: 2881: 2880: 2860: 2854: 2853: 2851: 2850: 2830: 2824: 2823: 2787: 2781: 2780: 2762: 2756: 2755: 2753: 2751: 2737: 2731: 2730: 2728: 2727: 2716: 2705: 2704: 2680: 2674: 2673: 2671: 2670: 2655: 2649: 2648: 2637:. p. 4.88. 2624: 2615: 2614: 2602: 2557:reduction firing 2429:maleic anhydride 2417:catalyst support 2410:Catalyst support 2386:used for making 2370:Steel production 2340:refractive index 2290:Silicon carbide 2249:nuclear reactors 2206:Heating elements 2142:indirect bandgap 2015:were described. 1931:lightning strike 1896:surge protection 1890:Electric systems 1818:Automobile parts 1400: 1357: 1353: 1265: 1261: 1243:inert atmosphere 1130:diamond simulant 864: 863: 860: 859: 856: 853: 850: 847: 844: 841: 838: 835: 832: 829: 789: 783: 780: 779: 708: 701: 694: 679: 659: 655: 651: 647: 643: 639: 635: 631: 627: 623: 619: 615: 611: 607: 603: 599: 595: 591: 587: 583: 579: 575: 561: 533: 488:Refractive index 405:Chemical formula 368:InChI=1/CSi/c1-2 331: 330: 315: 313: 297: 261: 250: 239: 220:Gmelin Reference 203: 195: 184: 173: 153: 133: 109: 49: 42: 40:Silicon carbide 38: 21: 9363: 9362: 9358: 9357: 9356: 9354: 9353: 9352: 9283: 9282: 9281: 9276: 9257:Metal carbonyls 9235: 9214: 9172: 9163: 9159: 9151: 9147: 9139: 9131: 9123: 9119: 9101: 9093: 9085: 9077: 9069: 9044: 9035: 9005: 9000: 8990: 8988: 8978: 8976: 8966: 8964: 8944: 8770: 8746: 8737: 8690: 8680: 8623: 8611: 8592:Propionaldehyde 8567:Ethylene glycol 8556: 8548: 8544: 8515: 8513: 8506: 8462:Cyanohexatriyne 8448: 8441: 8388: 8381: 8316: 8309: 8269: 8222: 8215: 8186:Methoxy radical 8116: 8109: 8105:Thiocyanic acid 7986: 7979: 7889: 7829:Ethynyl radical 7765: 7759: 7758: 7757: 7756: 7750: 7749: 7748: 7747: 7738: 7729:Sulfur monoxide 7714:Sodium chloride 7699:Silicon carbide 7606:Diatomic carbon 7596:Carbon monoxide 7538: 7533: 7503: 7498: 7497: 7462: 7454: 7429: 7425: 7421: 7417: 7413: 7409: 7405: 7401: 7397: 7384: 7380: 7376: 7372: 7367: 7360: 7356: 7352: 7348: 7344: 7340: 7335: 7326: 7319: 7315: 7311: 7307: 7302: 7294: 7290: 7286: 7282: 7277: 7267: 7263: 7259: 7255: 7251: 7247: 7242: 7232: 7228: 7224: 7220: 7216: 7212: 7208: 7204: 7200: 7196: 7192: 7182: 7178: 7174: 7170: 7166: 7162: 7157: 7150: 7146: 7138: 7134: 7130: 7126: 7122: 7118: 7113: 7105: 7101: 7099: 7095: 7091: 7087: 7083: 7078: 6961: 6957: 6953: 6949: 6940: 6936: 6931: 6923: 6919: 6915: 6911: 6907: 6900: 6896: 6892: 6888: 6884: 6880: 6870: 6866: 6856: 6852: 6848: 6844: 6840: 6834: 6816: 6809: 6805: 6801: 6779: 6775: 6771: 6767: 6763: 6754: 6750: 6746: 6742: 6738: 6734: 6730: 6721: 6717: 6713: 6709: 6705: 6693: 6689: 6685: 6681: 6679: 6671: 6667: 6663: 6655: 6651: 6647: 6643: 6638: 6632: 6628: 6624: 6620: 6611: 6607: 6603: 6599: 6595: 6591: 6587: 6575: 6557: 6549: 6540: 6536: 6534: 6524: 6512: 6508: 6504: 6500: 6496: 6492: 6488: 6484: 6480: 6476: 6472: 6468: 6464: 6448: 6442: 6435: 6422: 6417: 6414: 6409: 6406: 6402: 6398: 6396: 6392: 6390: 6383: 6379: 6374: 6370: 6364: 6360: 6356: 6351: 6340: 6336: 6332: 6326: 6319: 6315: 6311: 6307: 6303: 6299: 6295: 6289: 6281: 6276: 6270: 6266: 6262: 6258: 6254: 6250: 6238: 6233: 6216: 6206: 6204: 6194: 6190: 6188: 6171: 6153: 6145: 6135: 6131: 6129: 6125: 6115: 6106: 6104: 6099: 6097: 6088: 6062: 6060: 6045: 6038: 6008: 6003: 5998: 5989: 5985: 5976: 5972: 5964: 5960: 5952: 5948: 5940: 5932: 5924: 5916: 5908: 5900: 5892: 5879: 5864: 5860: 5856: 5848: 5844: 5829: 5808: 5803: 5740: 5732: 5720: 5715: 5714: 5704: 5702: 5692: 5688: 5681: 5665: 5661: 5652: 5650: 5646: 5645: 5641: 5591: 5587: 5550: 5546: 5489: 5485: 5434: 5430: 5390: 5386: 5339:(1–2): 92–100. 5329: 5325: 5267: 5263: 5215: 5209: 5205: 5196: 5194: 5186: 5185: 5181: 5150: 5146: 5139: 5123: 5119: 5110: 5108: 5099: 5098: 5094: 5087: 5071: 5067: 5061:Wayback Machine 5052:Teague, Tyler. 5051: 5047: 5038: 5036: 5021: 5017: 5008: 5006: 4991: 4987: 4968: 4964: 4933: 4929: 4919: 4917: 4908: 4907: 4903: 4866: 4862: 4852: 4850: 4842: 4841: 4837: 4828: 4826: 4817: 4816: 4812: 4805: 4789: 4785: 4735: 4729: 4725: 4716: 4714: 4705: 4704: 4700: 4660: 4656: 4646: 4644: 4639: 4638: 4634: 4627: 4611: 4604: 4594: 4592: 4586: 4582: 4572: 4570: 4560: 4556: 4539: 4537: 4533: 4526: 4520: 4516: 4500: 4494: 4490: 4483: 4467: 4463: 4453: 4451: 4442: 4441: 4437: 4420: 4419: 4415: 4376: 4372: 4349:10.1038/430974a 4325: 4321: 4302:MRS Proceedings 4297: 4293: 4286: 4270: 4266: 4259: 4243: 4239: 4232: 4216: 4212: 4205: 4189: 4185: 4162: 4158: 4145: 4144: 4140: 4105:MRS Proceedings 4101: 4097: 4088: 4086: 4073: 4072: 4068: 4055: 4054: 4050: 4041: 4039: 4030: 4029: 4025: 3976: 3972: 3963: 3961: 3952: 3951: 3947: 3938: 3936: 3923: 3922: 3918: 3905: 3904: 3900: 3885: 3865: 3861: 3852: 3850: 3846: 3793: 3789: 3726: 3722: 3691: 3684: 3674: 3672: 3663: 3662: 3658: 3619: 3610: 3573: 3569: 3561: 3557: 3504: 3497: 3466: 3462: 3450: 3446: 3439: 3423: 3419: 3410: 3409: 3405: 3382: 3378: 3339: 3335: 3296: 3292: 3285: 3269: 3262: 3256:Wayback Machine 3247: 3243: 3231: 3227: 3220: 3206: 3202: 3195: 3179: 3175: 3167: 3160: 3152: 3148: 3142:Lely SiC Wafers 3140: 3136: 3121: 3117: 3110: 3094: 3085: 3062: 3058: 3027: 3023: 3014: 3012: 3001: 2997: 2985: 2983: 2979: 2970: 2968: 2946: 2942: 2933: 2931: 2916: 2915: 2911: 2902: 2900: 2896: 2888: 2884: 2877: 2861: 2857: 2848: 2846: 2831: 2827: 2788: 2784: 2763: 2759: 2749: 2747: 2739: 2738: 2734: 2725: 2723: 2718: 2717: 2708: 2701: 2681: 2677: 2668: 2666: 2656: 2652: 2645: 2625: 2618: 2603: 2592: 2587: 2565: 2541: 2532: 2525: 2521: 2501: 2499:Quantum physics 2469: 2437: 2412: 2372: 2318:engagement ring 2308: 2269: 2257:medical imaging 2241: 2232: 2208: 2199: 2185: 2154: 2138:gallium nitride 2119: 2084:Beginning with 2072:Packaging: SiC 1997:Schottky diodes 1993:mass production 1985: 1969: 1917: 1913: 1892: 1884: 1820: 1802: 1798: 1793:Silicon nitride 1772:composite armor 1732:ballistic vests 1724: 1711:aluminium oxide 1696:aluminium oxide 1660: 1655: 1604: 1577: 1564:silicon dioxide 1526: 1510: 1458:Density (g/cm) 1450:3.0730; 10.053 1422: 1418: 1411: 1407: 1398: 1396: 1260: 1254: 1190: 1186: 1150: 1106: 1041: 1005: 1000: 922: 826: 822: 811:Silicon carbide 808: 801: 796: 795: 794: ?) 785: 781: 777: 773: 759: 746: 733: 713: 712: 711: 710: 703: 696: 689: 685: 677: 570: 556: 542: 526: 498: 496: 478: 407: 393: 390: 385: 384: 373: 370: 369: 363: 362: 356: 355: 352: 346: 345: 334: 316: 309: 300: 280: 264: 251: 237:Silicon+carbide 222: 213: 176: 156: 136: 123: 112: 99: 85: 81: 73: 72: 71:Silicon carbide 56: 50: 35: 28: 23: 22: 15: 12: 11: 5: 9361: 9351: 9350: 9345: 9340: 9338:Semiconductors 9335: 9330: 9325: 9320: 9315: 9310: 9305: 9300: 9295: 9278: 9277: 9275: 9274: 9269: 9264: 9259: 9254: 9249: 9243: 9241: 9237: 9236: 9234: 9233: 9228: 9222: 9220: 9219:Nanostructures 9216: 9215: 9213: 9212: 9207: 9202: 9197: 9192: 9187: 9180: 9178: 9174: 9173: 9171: 9170: 9165: 9161: 9157: 9153: 9149: 9145: 9141: 9137: 9133: 9129: 9125: 9121: 9117: 9113: 9108: 9103: 9099: 9095: 9091: 9087: 9083: 9079: 9075: 9071: 9067: 9063: 9058: 9052: 9050: 9046: 9045: 9034: 9033: 9026: 9019: 9011: 9002: 9001: 8999: 8998: 8986: 8974: 8962: 8949: 8946: 8945: 8943: 8942: 8937: 8932: 8927: 8921: 8916: 8911: 8906: 8901: 8896: 8891: 8886: 8881: 8876: 8871: 8866: 8861: 8856: 8851: 8846: 8841: 8836: 8831: 8829:Cosmochemistry 8826: 8821: 8816: 8811: 8806: 8801: 8796: 8794:Astrochemistry 8791: 8786: 8780: 8778: 8772: 8771: 8769: 8768: 8763: 8758: 8753: 8748: 8744: 8740: 8735: 8731: 8726: 8721: 8716: 8711: 8706: 8700: 8698: 8692: 8691: 8689: 8688: 8683: 8678: 8674: 8669: 8664: 8659: 8654: 8649: 8647:Formyl radical 8644: 8639: 8633: 8627: 8625: 8617: 8616: 8613: 8612: 8610: 8609: 8604: 8599: 8594: 8589: 8584: 8579: 8577:Methyl acetate 8574: 8569: 8564: 8559: 8554: 8550: 8546: 8542: 8536: 8531: 8526: 8520: 8518: 8508: 8507: 8505: 8504: 8499: 8494: 8489: 8484: 8479: 8474: 8469: 8467:Dimethyl ether 8464: 8459: 8453: 8451: 8443: 8442: 8440: 8439: 8434: 8432:Methyl formate 8429: 8424: 8419: 8417:Glycolaldehyde 8414: 8409: 8404: 8399: 8393: 8391: 8383: 8382: 8380: 8379: 8374: 8369: 8364: 8359: 8354: 8352:Glycolonitrile 8349: 8347:Ethylene oxide 8344: 8339: 8338: 8337: 8327: 8321: 8319: 8311: 8310: 8308: 8307: 8302: 8297: 8292: 8287: 8282: 8277: 8272: 8267: 8263: 8258: 8253: 8248: 8246:Cyclopropenone 8243: 8238: 8233: 8227: 8225: 8217: 8216: 8214: 8213: 8208: 8203: 8198: 8193: 8188: 8183: 8178: 8173: 8168: 8163: 8158: 8153: 8148: 8146:Cyanoacetylene 8143: 8138: 8133: 8128: 8121: 8119: 8111: 8110: 8108: 8107: 8102: 8097: 8092: 8087: 8082: 8077: 8072: 8067: 8065:Methyl radical 8062: 8057: 8052: 8047: 8042: 8040:Isocyanic acid 8037: 8032: 8027: 8022: 8017: 8012: 8007: 8005:Isocyanic acid 8002: 7997: 7991: 7989: 7981: 7980: 7978: 7977: 7972: 7967: 7962: 7957: 7952: 7950:Sulfur dioxide 7947: 7942: 7937: 7932: 7927: 7925:Sodium cyanide 7922: 7917: 7912: 7907: 7902: 7897: 7892: 7887: 7883: 7878: 7873: 7868: 7863: 7858: 7853: 7848: 7842: 7836: 7834:Formyl radical 7831: 7826: 7821: 7816: 7811: 7806: 7801: 7796: 7794:Carbon dioxide 7791: 7786: 7781: 7775: 7773: 7767: 7766: 7741: 7739: 7737: 7736: 7731: 7726: 7721: 7716: 7711: 7706: 7701: 7696: 7691: 7686: 7681: 7675: 7670: 7665: 7659: 7654: 7649: 7644: 7642:Iron(II) oxide 7639: 7634: 7628: 7623: 7618: 7613: 7608: 7603: 7598: 7593: 7588: 7583: 7578: 7573: 7568: 7563: 7557: 7555: 7546: 7540: 7539: 7532: 7531: 7524: 7517: 7509: 7500: 7499: 7494: 7493: 7490: 7487: 7484: 7481: 7478: 7475: 7472: 7469: 7464: 7460: 7456: 7452: 7448: 7443: 7438: 7435: 7431: 7430: 7427: 7423: 7419: 7415: 7411: 7407: 7403: 7399: 7395: 7389: 7386: 7382: 7378: 7374: 7370: 7365: 7361: 7358: 7354: 7350: 7346: 7342: 7338: 7333: 7329: 7324: 7320: 7317: 7313: 7309: 7305: 7300: 7296: 7292: 7288: 7284: 7280: 7275: 7271: 7268: 7265: 7261: 7257: 7253: 7249: 7245: 7240: 7236: 7233: 7230: 7226: 7222: 7218: 7214: 7210: 7206: 7202: 7198: 7194: 7190: 7184: 7180: 7176: 7172: 7168: 7164: 7160: 7155: 7151: 7148: 7144: 7136: 7132: 7128: 7124: 7120: 7116: 7111: 7107: 7103: 7100: 7097: 7093: 7089: 7085: 7081: 7076: 7072: 7068: 7067: 7064: 7061: 7060: 7057: 7054: 7051: 7048: 7045: 7042: 7039: 7036: 7033: 7030: 7027: 7024: 7021: 7018: 7015: 7012: 7009: 7006: 7002: 7001: 6998: 6995: 6992: 6989: 6986: 6983: 6980: 6977: 6972: 6967: 6962: 6959: 6955: 6951: 6947: 6941: 6938: 6934: 6929: 6925: 6921: 6917: 6913: 6909: 6905: 6901: 6898: 6894: 6890: 6886: 6882: 6878: 6872: 6868: 6864: 6860: 6857: 6854: 6850: 6846: 6842: 6838: 6832: 6828: 6822: 6821: 6818: 6814: 6810: 6807: 6803: 6799: 6796: 6793: 6790: 6787: 6784: 6781: 6777: 6773: 6769: 6765: 6761: 6755: 6752: 6748: 6744: 6740: 6736: 6732: 6728: 6722: 6719: 6715: 6711: 6707: 6703: 6697: 6694: 6691: 6687: 6683: 6677: 6673: 6669: 6665: 6661: 6657: 6653: 6649: 6645: 6641: 6636: 6630: 6626: 6622: 6618: 6612: 6609: 6605: 6601: 6597: 6593: 6589: 6585: 6579: 6577: 6573: 6569: 6563: 6562: 6559: 6555: 6551: 6547: 6544: 6532: 6528: 6519: 6516: 6513: 6510: 6506: 6502: 6498: 6494: 6490: 6486: 6482: 6478: 6474: 6470: 6466: 6462: 6459: 6450: 6446: 6440: 6433: 6425: 6420: 6412: 6404: 6400: 6388: 6384: 6381: 6377: 6372: 6368: 6362: 6358: 6354: 6349: 6341: 6338: 6334: 6330: 6324: 6320: 6317: 6313: 6309: 6305: 6301: 6297: 6293: 6287: 6283: 6279: 6271: 6268: 6264: 6260: 6256: 6252: 6248: 6242: 6240: 6236: 6228: 6222: 6221: 6218: 6214: 6210: 6202: 6198: 6186: 6182: 6177: 6174: 6169: 6165: 6159: 6158: 6155: 6151: 6147: 6143: 6139: 6127: 6123: 6119: 6110: 6102: 6095: 6091: 6086: 6082: 6076: 6075: 6072: 6070: 6068: 6066: 6058: 6051: 6050: 6047: 6046: 6037: 6036: 6029: 6022: 6014: 6005: 6004: 6002: 6001: 5996: 5992: 5987: 5983: 5979: 5974: 5970: 5966: 5962: 5958: 5954: 5950: 5946: 5942: 5938: 5934: 5930: 5926: 5922: 5918: 5914: 5910: 5906: 5902: 5898: 5894: 5890: 5886: 5881: 5877: 5872: 5870: 5866: 5865: 5863: 5862: 5858: 5854: 5850: 5846: 5842: 5837: 5835: 5831: 5830: 5828: 5827: 5822: 5816: 5814: 5810: 5809: 5802: 5801: 5794: 5787: 5779: 5773: 5772: 5763: 5750: 5738: 5730: 5719: 5718:External links 5716: 5713: 5712: 5694:Hansen, Tony. 5686: 5679: 5659: 5639: 5585: 5544: 5483: 5448:(2): 151–156. 5428: 5384: 5323: 5278:(3): 203–207. 5261: 5203: 5179: 5144: 5137: 5117: 5092: 5085: 5065: 5045: 5015: 4985: 4962: 4943:(2): 219–224. 4927: 4901: 4860: 4835: 4810: 4803: 4783: 4740:Applied Optics 4723: 4698: 4654: 4632: 4625: 4602: 4580: 4554: 4514: 4488: 4481: 4461: 4435: 4413: 4386:(5): 526–529. 4370: 4319: 4291: 4284: 4264: 4257: 4237: 4230: 4210: 4203: 4183: 4156: 4138: 4095: 4066: 4048: 4023: 3970: 3945: 3916: 3898: 3883: 3859: 3844: 3787: 3720: 3701:(3): 645–655. 3682: 3656: 3608: 3567: 3555: 3495: 3460: 3444: 3437: 3417: 3403: 3392:(3): 260–279. 3376: 3349:(3): 823–839. 3333: 3306:(8): 706–709. 3290: 3283: 3260: 3241: 3225: 3218: 3200: 3193: 3173: 3170:on 2010-12-17. 3146: 3134: 3115: 3108: 3083: 3056: 3021: 2995: 2977: 2940: 2909: 2894: 2882: 2875: 2855: 2825: 2782: 2772:Comptes rendus 2757: 2745:echa.europa.eu 2732: 2706: 2699: 2675: 2650: 2643: 2616: 2589: 2588: 2586: 2583: 2582: 2581: 2576: 2571: 2564: 2561: 2540: 2539:Pottery glazes 2537: 2531: 2528: 2523: 2519: 2500: 2497: 2491:applications. 2488:graphitization 2468: 2465: 2436: 2433: 2411: 2408: 2404:trace elements 2371: 2368: 2344:cubic zirconia 2307: 2304: 2268: 2265: 2240: 2237: 2231: 2230:Heat shielding 2228: 2216:heat treatment 2207: 2204: 2195:Main article: 2184: 2181: 2153: 2150: 2146:direct bandgap 2118: 2115: 2082: 2081: 2070: 1999:, followed by 1984: 1981: 1968: 1965: 1915: 1911: 1891: 1888: 1883: 1880: 1844:Bugatti Veyron 1819: 1816: 1800: 1796: 1784:Pinnacle Armor 1723: 1720: 1659: 1656: 1654: 1651: 1618:and p-type by 1603: 1600: 1584:electric field 1575: 1546: 1545: 1542: 1531: 1528: 1522: 1521: 1518: 1515: 1512: 1503: 1502: 1499: 1496: 1493: 1486: 1485: 1482: 1479: 1476: 1469: 1468: 1465: 1462: 1459: 1455: 1454: 1453:3.0810; 15.12 1451: 1448: 1445: 1441: 1440: 1437: 1434: 1431: 1429:Pearson symbol 1425: 1424: 1420: 1416: 1413: 1409: 1405: 1402: 1394: 1391: 1385: 1384: 1381: 1378: 1375: 1371: 1370: 1367: 1364: 1361: 1305: 1304: 1301: 1298: 1294: 1293: 1284: 1275: 1256:Main article: 1253: 1250: 1188: 1184: 1148: 1105: 1102: 1040: 1037: 1036: 1035: 1028: 1022: 1015: 1004: 1001: 999: 996: 984:beta-polymorph 944:deposits, and 921: 918: 895:ceramic plates 806: 803: 802: 797: 775: 774: 770:standard state 767: 764: 763: 760: 754: 751: 750: 747: 741: 738: 737: 734: 728: 725: 724: 715: 714: 704: 697: 690: 675: 674: 673: 672: 670: 661: 660: 618:P305+P351+P338 571: 566: 563: 562: 557: 552: 549: 548: 543: 538: 535: 534: 527: 522: 519: 518: 508: 507: 503: 502: 499: 494: 486: 483: 482: 479: 473: 470: 469: 466: 460: 459: 456: 450: 449: 446: 440: 439: 436: 430: 429: 426: 422: 421: 418: 412: 411: 408: 403: 400: 399: 395: 394: 392: 391: 388: 380: 379: 378: 375: 374: 372: 371: 367: 366: 364: 360: 359: 357: 353: 350: 349: 341: 340: 339: 336: 335: 333: 332: 319: 317: 305: 302: 301: 299: 298: 290: 288: 282: 281: 279: 278: 274: 272: 266: 265: 263: 262: 254: 252: 244: 241: 240: 233: 227: 226: 223: 218: 215: 214: 212: 211: 207: 205: 197: 196: 186: 178: 177: 175: 174: 166: 164: 158: 157: 155: 154: 146: 144: 138: 137: 135: 134: 126: 124: 117: 114: 113: 111: 110: 102: 100: 95: 92: 91: 87: 86: 79: 75: 74: 70: 69: 63: 62: 58: 57: 51: 26: 9: 6: 4: 3: 2: 9360: 9349: 9346: 9344: 9341: 9339: 9336: 9334: 9331: 9329: 9326: 9324: 9321: 9319: 9316: 9314: 9311: 9309: 9306: 9304: 9301: 9299: 9296: 9294: 9291: 9290: 9288: 9273: 9270: 9268: 9265: 9263: 9262:Carbonic acid 9260: 9258: 9255: 9253: 9250: 9248: 9245: 9244: 9242: 9238: 9232: 9229: 9227: 9224: 9223: 9221: 9217: 9211: 9210:Thiofulminate 9208: 9206: 9203: 9201: 9198: 9196: 9193: 9191: 9188: 9185: 9182: 9181: 9179: 9175: 9169: 9166: 9164: 9154: 9152: 9142: 9140: 9134: 9132: 9126: 9124: 9114: 9112: 9109: 9107: 9104: 9102: 9096: 9094: 9088: 9086: 9080: 9078: 9072: 9070: 9064: 9062: 9059: 9057: 9054: 9053: 9051: 9047: 9042: 9039: 9032: 9027: 9025: 9020: 9018: 9013: 9012: 9009: 8997: 8987: 8985: 8975: 8973: 8963: 8961: 8960: 8951: 8950: 8947: 8941: 8938: 8936: 8933: 8931: 8928: 8925: 8922: 8920: 8917: 8915: 8912: 8910: 8907: 8905: 8902: 8900: 8897: 8895: 8892: 8890: 8887: 8885: 8882: 8880: 8877: 8875: 8872: 8870: 8867: 8865: 8862: 8860: 8859:Homochirality 8857: 8855: 8852: 8850: 8847: 8845: 8842: 8840: 8837: 8835: 8832: 8830: 8827: 8825: 8822: 8820: 8817: 8815: 8812: 8810: 8807: 8805: 8802: 8800: 8797: 8795: 8792: 8790: 8787: 8785: 8782: 8781: 8779: 8777: 8773: 8767: 8764: 8762: 8759: 8757: 8754: 8752: 8749: 8747: 8741: 8739: 8732: 8730: 8727: 8725: 8722: 8720: 8717: 8715: 8714:Methoxyethane 8712: 8710: 8707: 8705: 8702: 8701: 8699: 8697: 8693: 8687: 8684: 8682: 8675: 8673: 8670: 8668: 8665: 8663: 8660: 8658: 8655: 8653: 8650: 8648: 8645: 8643: 8640: 8637: 8634: 8632: 8629: 8628: 8626: 8622: 8618: 8608: 8605: 8603: 8600: 8598: 8597:Butyronitrile 8595: 8593: 8590: 8588: 8585: 8583: 8580: 8578: 8575: 8573: 8572:Ethyl formate 8570: 8568: 8565: 8563: 8560: 8558: 8551: 8540: 8537: 8535: 8532: 8530: 8527: 8525: 8522: 8521: 8519: 8517: 8509: 8503: 8500: 8498: 8497:Propionitrile 8495: 8493: 8490: 8488: 8485: 8483: 8480: 8478: 8475: 8473: 8470: 8468: 8465: 8463: 8460: 8458: 8455: 8454: 8452: 8450: 8444: 8438: 8435: 8433: 8430: 8428: 8425: 8423: 8420: 8418: 8415: 8413: 8410: 8408: 8405: 8403: 8400: 8398: 8395: 8394: 8392: 8390: 8384: 8378: 8377:Vinyl alcohol 8375: 8373: 8370: 8368: 8365: 8363: 8360: 8358: 8355: 8353: 8350: 8348: 8345: 8343: 8340: 8336: 8335:Vinyl cyanide 8333: 8332: 8331: 8330:Acrylonitrile 8328: 8326: 8323: 8322: 8320: 8318: 8312: 8306: 8303: 8301: 8298: 8296: 8295:Pentynylidyne 8293: 8291: 8288: 8286: 8283: 8281: 8278: 8276: 8273: 8271: 8264: 8262: 8259: 8257: 8254: 8252: 8249: 8247: 8244: 8242: 8239: 8237: 8234: 8232: 8229: 8228: 8226: 8224: 8218: 8212: 8209: 8207: 8204: 8202: 8199: 8197: 8194: 8192: 8191:Methylenimine 8189: 8187: 8184: 8182: 8179: 8177: 8174: 8172: 8169: 8167: 8164: 8162: 8159: 8157: 8154: 8152: 8149: 8147: 8144: 8142: 8139: 8137: 8134: 8132: 8129: 8126: 8123: 8122: 8120: 8118: 8112: 8106: 8103: 8101: 8098: 8096: 8093: 8091: 8088: 8086: 8083: 8081: 8078: 8076: 8073: 8071: 8070:Propynylidyne 8068: 8066: 8063: 8061: 8060:Methyl cation 8058: 8056: 8053: 8051: 8048: 8046: 8043: 8041: 8038: 8036: 8033: 8031: 8028: 8026: 8023: 8021: 8020:Fulminic acid 8018: 8016: 8013: 8011: 8008: 8006: 8003: 8001: 7998: 7996: 7993: 7992: 7990: 7988: 7982: 7976: 7973: 7971: 7968: 7966: 7963: 7961: 7958: 7956: 7953: 7951: 7948: 7946: 7943: 7941: 7938: 7936: 7933: 7931: 7928: 7926: 7923: 7921: 7918: 7916: 7913: 7911: 7908: 7906: 7903: 7901: 7898: 7896: 7895:Nitrous oxide 7893: 7891: 7884: 7882: 7879: 7877: 7874: 7872: 7869: 7867: 7864: 7862: 7859: 7857: 7854: 7852: 7849: 7846: 7843: 7840: 7837: 7835: 7832: 7830: 7827: 7825: 7822: 7820: 7817: 7815: 7812: 7810: 7807: 7805: 7802: 7800: 7797: 7795: 7792: 7790: 7789:Amino radical 7787: 7785: 7782: 7780: 7777: 7776: 7774: 7772: 7768: 7763: 7754: 7745: 7735: 7732: 7730: 7727: 7725: 7722: 7720: 7719:Sodium iodide 7717: 7715: 7712: 7710: 7707: 7705: 7702: 7700: 7697: 7695: 7692: 7690: 7687: 7685: 7682: 7679: 7676: 7674: 7671: 7669: 7666: 7663: 7660: 7658: 7655: 7653: 7650: 7648: 7645: 7643: 7640: 7638: 7635: 7632: 7629: 7627: 7624: 7622: 7619: 7617: 7614: 7612: 7609: 7607: 7604: 7602: 7601:Cyano radical 7599: 7597: 7594: 7592: 7589: 7587: 7584: 7582: 7581:Carbon cation 7579: 7577: 7574: 7572: 7569: 7567: 7564: 7562: 7559: 7558: 7556: 7554: 7550: 7547: 7545: 7541: 7537: 7530: 7525: 7523: 7518: 7516: 7511: 7510: 7507: 7491: 7488: 7485: 7482: 7479: 7476: 7473: 7470: 7468: 7465: 7463: 7457: 7455: 7449: 7447: 7444: 7442: 7439: 7436: 7433: 7432: 7393: 7390: 7387: 7368: 7362: 7336: 7330: 7327: 7321: 7303: 7297: 7278: 7272: 7269: 7243: 7237: 7234: 7188: 7185: 7158: 7152: 7142: 7114: 7108: 7079: 7073: 7070: 7069: 7062: 7058: 7055: 7052: 7049: 7046: 7043: 7040: 7037: 7034: 7031: 7028: 7025: 7022: 7019: 7016: 7013: 7010: 7007: 7004: 7003: 6999: 6996: 6993: 6990: 6987: 6984: 6981: 6978: 6976: 6973: 6971: 6968: 6966: 6963: 6945: 6942: 6932: 6926: 6924: 6902: 6876: 6873: 6871: 6861: 6858: 6836: 6829: 6827: 6824: 6823: 6819: 6817: 6811: 6797: 6794: 6791: 6788: 6785: 6782: 6759: 6756: 6726: 6723: 6701: 6698: 6695: 6680: 6674: 6672: 6658: 6639: 6616: 6613: 6583: 6580: 6578: 6576: 6570: 6568: 6565: 6564: 6560: 6558: 6552: 6545: 6543: 6539: 6535: 6529: 6527: 6523: 6520: 6517: 6514: 6460: 6458: 6454: 6451: 6444: 6436: 6429: 6426: 6424: 6416: 6408: 6395: 6391: 6385: 6375: 6352: 6345: 6342: 6328: 6321: 6291: 6284: 6282: 6275: 6272: 6246: 6243: 6241: 6239: 6232: 6229: 6227: 6224: 6223: 6219: 6217: 6211: 6209: 6205: 6199: 6197: 6193: 6189: 6183: 6181: 6178: 6175: 6173: 6166: 6164: 6161: 6160: 6156: 6154: 6148: 6146: 6140: 6138: 6134: 6130: 6120: 6118: 6114: 6111: 6109: 6105: 6098: 6092: 6090: 6083: 6081: 6078: 6077: 6073: 6067: 6065: 6061: 6055: 6054: 6048: 6043: 6035: 6030: 6028: 6023: 6021: 6016: 6015: 6012: 6000: 5993: 5991: 5980: 5978: 5967: 5965: 5955: 5953: 5943: 5941: 5935: 5933: 5927: 5925: 5919: 5917: 5911: 5909: 5903: 5901: 5895: 5893: 5887: 5885: 5882: 5880: 5874: 5873: 5871: 5867: 5861: 5851: 5849: 5839: 5838: 5836: 5832: 5826: 5823: 5821: 5818: 5817: 5815: 5811: 5807: 5800: 5795: 5793: 5788: 5786: 5781: 5780: 5777: 5769: 5764: 5760: 5759:IEEE Spectrum 5756: 5751: 5747: 5743: 5739: 5736:. Mindat.org. 5735: 5731: 5727: 5722: 5721: 5701: 5697: 5690: 5682: 5676: 5672: 5671: 5663: 5649: 5643: 5635: 5631: 5627: 5623: 5619: 5615: 5610: 5605: 5602:(2): 023035. 5601: 5597: 5589: 5580: 5575: 5571: 5567: 5563: 5559: 5555: 5548: 5540: 5536: 5532: 5528: 5524: 5520: 5516: 5512: 5507: 5502: 5498: 5494: 5487: 5479: 5475: 5471: 5467: 5463: 5459: 5455: 5451: 5447: 5443: 5439: 5432: 5424: 5420: 5416: 5412: 5408: 5404: 5400: 5396: 5388: 5380: 5376: 5372: 5368: 5364: 5360: 5356: 5352: 5347: 5342: 5338: 5334: 5327: 5319: 5315: 5311: 5307: 5302: 5297: 5293: 5289: 5285: 5281: 5277: 5273: 5265: 5257: 5253: 5249: 5245: 5241: 5237: 5233: 5229: 5225: 5221: 5214: 5207: 5193: 5189: 5188:"Printmaking" 5183: 5175: 5171: 5167: 5163: 5159: 5155: 5148: 5140: 5134: 5130: 5129: 5121: 5107:on 2012-02-04 5106: 5102: 5096: 5088: 5082: 5078: 5077: 5069: 5062: 5058: 5055: 5049: 5034: 5030: 5026: 5019: 5005:on 2012-04-25 5004: 5000: 4996: 4989: 4981: 4977: 4973: 4966: 4958: 4954: 4950: 4946: 4942: 4938: 4931: 4915: 4911: 4905: 4896: 4891: 4887: 4883: 4879: 4875: 4871: 4864: 4849: 4845: 4839: 4825:on 2022-11-11 4824: 4820: 4814: 4806: 4800: 4796: 4795: 4787: 4779: 4775: 4770: 4765: 4761: 4757: 4753: 4749: 4745: 4741: 4734: 4727: 4713:on 2012-03-15 4712: 4708: 4702: 4694: 4690: 4686: 4682: 4678: 4674: 4670: 4666: 4658: 4642: 4636: 4628: 4622: 4618: 4617: 4609: 4607: 4591: 4584: 4569: 4565: 4558: 4551: 4549: 4540:September 20, 4532: 4525: 4518: 4510: 4506: 4499: 4492: 4484: 4478: 4474: 4473: 4465: 4449: 4445: 4439: 4431: 4427: 4423: 4417: 4409: 4405: 4401: 4397: 4393: 4389: 4385: 4381: 4374: 4366: 4362: 4358: 4354: 4350: 4346: 4342: 4338: 4334: 4330: 4323: 4315: 4311: 4307: 4303: 4295: 4287: 4281: 4277: 4276: 4268: 4260: 4254: 4250: 4249: 4241: 4233: 4227: 4223: 4222: 4214: 4206: 4200: 4196: 4195: 4187: 4179: 4175: 4171: 4167: 4160: 4152: 4148: 4142: 4134: 4130: 4126: 4122: 4118: 4114: 4110: 4106: 4099: 4085:on 2009-03-26 4084: 4080: 4079:topmost10.com 4076: 4070: 4062: 4058: 4052: 4038:on 2012-01-26 4037: 4033: 4027: 4019: 4015: 4011: 4007: 4003: 3999: 3994: 3989: 3985: 3981: 3974: 3960:on 2012-02-17 3959: 3955: 3949: 3935:on 2009-04-06 3934: 3930: 3926: 3920: 3912: 3908: 3902: 3894: 3890: 3886: 3880: 3876: 3872: 3871: 3863: 3855: 3848: 3840: 3836: 3831: 3826: 3822: 3818: 3814: 3810: 3807:(4): 044201. 3806: 3802: 3798: 3791: 3783: 3779: 3774: 3769: 3765: 3761: 3757: 3753: 3748: 3743: 3740:(4): 044205. 3739: 3735: 3731: 3724: 3716: 3712: 3708: 3704: 3700: 3696: 3689: 3687: 3670: 3666: 3660: 3652: 3648: 3644: 3640: 3636: 3632: 3628: 3624: 3617: 3615: 3613: 3604: 3600: 3595: 3590: 3587:(1): 014601. 3586: 3582: 3578: 3571: 3564: 3559: 3551: 3547: 3542: 3537: 3533: 3529: 3525: 3521: 3518:(4): 044204. 3517: 3513: 3509: 3502: 3500: 3491: 3487: 3483: 3479: 3475: 3471: 3464: 3457: 3454:Published in 3453: 3448: 3440: 3434: 3430: 3429: 3421: 3413: 3407: 3399: 3395: 3391: 3387: 3380: 3372: 3368: 3364: 3360: 3356: 3352: 3348: 3344: 3337: 3329: 3325: 3321: 3317: 3313: 3309: 3305: 3301: 3294: 3286: 3280: 3276: 3275: 3267: 3265: 3257: 3253: 3250: 3245: 3238: 3235:Published in 3234: 3229: 3221: 3215: 3211: 3204: 3196: 3190: 3186: 3185: 3177: 3166: 3159: 3158: 3150: 3143: 3138: 3130: 3126: 3119: 3111: 3105: 3101: 3100: 3092: 3090: 3088: 3079: 3075: 3071: 3067: 3060: 3052: 3048: 3044: 3040: 3036: 3032: 3025: 3011:on 2012-04-30 3010: 3006: 2999: 2992: 2988: 2981: 2967: 2963: 2959: 2955: 2951: 2944: 2929: 2925: 2924: 2919: 2913: 2905: 2898: 2892: 2886: 2878: 2872: 2868: 2867: 2859: 2844: 2840: 2836: 2829: 2821: 2817: 2813: 2809: 2805: 2801: 2797: 2793: 2786: 2778: 2774: 2773: 2768: 2761: 2746: 2742: 2736: 2721: 2715: 2713: 2711: 2702: 2700:1-4398-5511-0 2696: 2692: 2688: 2687: 2679: 2665: 2661: 2654: 2646: 2644:1-4398-5511-0 2640: 2636: 2632: 2631: 2623: 2621: 2612: 2608: 2601: 2599: 2597: 2595: 2590: 2580: 2577: 2575: 2572: 2570: 2567: 2566: 2560: 2558: 2554: 2550: 2546: 2536: 2527: 2517: 2512: 2510: 2506: 2505:color centers 2496: 2492: 2489: 2486: 2480: 2476: 2474: 2464: 2462: 2456: 2454: 2449: 2446: 2442: 2432: 2430: 2426: 2422: 2418: 2407: 2405: 2401: 2397: 2393: 2389: 2385: 2376: 2367: 2365: 2364:birefringence 2361: 2357: 2353: 2349: 2345: 2341: 2337: 2333: 2329: 2325: 2317: 2312: 2303: 2301: 2297: 2293: 2288: 2286: 2282: 2278: 2274: 2264: 2262: 2258: 2254: 2253:nuclear waste 2250: 2246: 2236: 2227: 2225: 2221: 2217: 2213: 2203: 2198: 2189: 2180: 2178: 2175: 2171: 2167: 2163: 2160:material for 2159: 2149: 2147: 2143: 2139: 2134: 2132: 2128: 2124: 2111: 2106: 2102: 2100: 2095: 2091: 2087: 2086:Tesla Model 3 2079: 2075: 2071: 2068: 2067: 2066: 2064: 2060: 2059:power modules 2057: 2054:circuits and 2053: 2048: 2046: 2042: 2038: 2033: 2028: 2026: 2022: 2016: 2014: 2010: 2006: 2002: 1998: 1994: 1990: 1989:semiconductor 1980: 1978: 1974: 1973:crystal radio 1964: 1962: 1958: 1954: 1950: 1945: 1941: 1937: 1932: 1928: 1924: 1919: 1909: 1905: 1901: 1897: 1887: 1879: 1877: 1873: 1869: 1865: 1861: 1857: 1853: 1849: 1845: 1841: 1837: 1833: 1824: 1815: 1813: 1808: 1804: 1794: 1789: 1785: 1781: 1777: 1776:Chobham armor 1773: 1769: 1768:boron carbide 1764: 1762: 1758: 1755: 1752: 1748: 1747:United States 1744: 1740: 1733: 1728: 1719: 1716: 1712: 1707: 1705: 1701: 1697: 1693: 1689: 1685: 1681: 1677: 1673: 1664: 1650: 1648: 1644: 1639: 1635: 1633: 1629: 1625: 1621: 1617: 1613: 1609: 1608:semiconductor 1599: 1597: 1593: 1589: 1585: 1581: 1572: 1567: 1565: 1561: 1557: 1553: 1543: 1540: 1536: 1532: 1529: 1524: 1523: 1519: 1516: 1513: 1508: 1505: 1504: 1500: 1497: 1494: 1491: 1488: 1487: 1483: 1480: 1477: 1474: 1471: 1470: 1466: 1463: 1460: 1457: 1456: 1452: 1449: 1446: 1443: 1442: 1438: 1435: 1432: 1430: 1427: 1426: 1414: 1403: 1392: 1390: 1387: 1386: 1382: 1379: 1376: 1373: 1372: 1368: 1365: 1362: 1359: 1358: 1352: 1350: 1346: 1342: 1338: 1334: 1331: 1327: 1322: 1320: 1311: 1302: 1299: 1296: 1295: 1289: 1285: 1280: 1276: 1271: 1267: 1266: 1259: 1249: 1246: 1244: 1240: 1236: 1233:are known as 1232: 1228: 1224: 1220: 1215: 1213: 1208: 1206: 1202: 1197: 1194: 1182: 1173: 1169: 1167: 1164: 1161: 1156: 1154: 1146: 1142: 1138: 1135: 1131: 1127: 1126:semiconductor 1118: 1110: 1101: 1099: 1095: 1091: 1086: 1084: 1080: 1076: 1072: 1070: 1066: 1062: 1058: 1050: 1045: 1033: 1029: 1026: 1023: 1020: 1016: 1013: 1010: 1009: 1008: 995: 993: 989: 985: 981: 978:found around 977: 972: 970: 966: 962: 958: 953: 951: 947: 943: 939: 935: 926: 917: 915: 911: 906: 904: 900: 896: 892: 888: 884: 880: 876: 875:semiconductor 872: 868: 862: 820: 816: 812: 800: 793: 788: 771: 765: 761: 757: 753: 752: 748: 745:(Recommended) 744: 740: 739: 735: 732:(Permissible) 731: 727: 726: 722: 721: 716: 709: 702: 695: 671: 668: 667: 663: 662: 572: 569: 565: 564: 558: 555: 551: 550: 547: 544: 541: 537: 536: 532: 528: 525: 521: 520: 516: 514: 509: 504: 500: 493: 489: 485: 484: 480: 476: 472: 471: 467: 465: 462: 461: 457: 455: 452: 451: 447: 445: 444:Melting point 442: 441: 437: 435: 432: 431: 427: 424: 423: 419: 417: 414: 413: 409: 406: 402: 401: 396: 387: 386: 383: 376: 365: 358: 348: 347: 344: 337: 329: 325: 324:DTXSID5052751 321: 320: 318: 308: 304: 303: 296: 292: 291: 289: 287: 284: 283: 276: 275: 273: 271: 268: 267: 260: 256: 255: 253: 247: 243: 242: 238: 234: 232: 229: 228: 224: 221: 217: 216: 209: 208: 206: 204: 199: 198: 194: 190: 187: 185: 183:ECHA InfoCard 180: 179: 172: 168: 167: 165: 163: 160: 159: 152: 148: 147: 145: 143: 140: 139: 132: 128: 127: 125: 121: 116: 115: 108: 104: 103: 101: 98: 94: 93: 88: 84: 76: 68: 64: 59: 55: 48: 43: 37: 33: 19: 9267:Bicarbonates 9167: 8952: 8935:Spectroscopy 8789:Astrobiology 8642:Formaldehyde 8534:Benzonitrile 8325:Acetaldehyde 8280:Methanethiol 8231:Acetonitrile 8136:Carbodiimide 8015:Formaldehyde 8010:Cyanoethynyl 7861:Iron cyanide 7856:Hydroperoxyl 7698: 7657:Nitric oxide 6337:, CrSi, CrSi 6112: 5883: 5758: 5745: 5734:"Moissanite" 5724:Kelly, J.F. 5703:. Retrieved 5700:Digital Fire 5699: 5689: 5669: 5662: 5651:. Retrieved 5642: 5599: 5595: 5588: 5561: 5557: 5547: 5496: 5492: 5486: 5445: 5441: 5431: 5398: 5394: 5387: 5336: 5332: 5326: 5275: 5271: 5264: 5223: 5220:MRS Bulletin 5219: 5206: 5195:. Retrieved 5191: 5182: 5160:(1): 29–34. 5157: 5153: 5147: 5127: 5120: 5109:. Retrieved 5105:the original 5095: 5075: 5068: 5048: 5037:. Retrieved 5033:the original 5028: 5018: 5007:. Retrieved 5003:the original 4998: 4988: 4971: 4965: 4940: 4936: 4930: 4918:. Retrieved 4913: 4904: 4877: 4873: 4863: 4851:. Retrieved 4847: 4838: 4827:. Retrieved 4823:the original 4813: 4793: 4786: 4746:(4): 483–8. 4743: 4739: 4726: 4715:. Retrieved 4711:the original 4701: 4668: 4664: 4657: 4645:. Retrieved 4635: 4615: 4593:. Retrieved 4583: 4571:. Retrieved 4567: 4557: 4545: 4538:. Retrieved 4517: 4508: 4504: 4491: 4471: 4464: 4454:11 September 4452:. Retrieved 4448:the original 4438: 4430:the original 4425: 4416: 4383: 4379: 4373: 4332: 4328: 4322: 4305: 4301: 4294: 4274: 4267: 4247: 4240: 4220: 4213: 4193: 4186: 4169: 4165: 4159: 4150: 4141: 4108: 4104: 4098: 4087:. Retrieved 4083:the original 4078: 4069: 4060: 4051: 4040:. Retrieved 4036:the original 4026: 3983: 3979: 3973: 3962:. Retrieved 3958:the original 3948: 3937:. Retrieved 3933:the original 3928: 3919: 3910: 3901: 3869: 3862: 3847: 3804: 3800: 3790: 3737: 3733: 3723: 3698: 3694: 3673:. Retrieved 3668: 3659: 3629:(1): 11860. 3626: 3622: 3584: 3580: 3570: 3558: 3515: 3511: 3473: 3469: 3463: 3455: 3447: 3427: 3420: 3406: 3389: 3385: 3379: 3346: 3342: 3336: 3303: 3299: 3293: 3273: 3244: 3236: 3228: 3209: 3203: 3183: 3176: 3165:the original 3156: 3149: 3137: 3128: 3124: 3118: 3098: 3069: 3065: 3059: 3034: 3030: 3024: 3013:. Retrieved 3009:the original 2998: 2990: 2980: 2969:. Retrieved 2957: 2953: 2943: 2932:. Retrieved 2928:the original 2921: 2912: 2897: 2885: 2865: 2858: 2847:. Retrieved 2838: 2833:Kelly, Jim. 2828: 2795: 2791: 2785: 2776: 2770: 2760: 2748:. Retrieved 2744: 2735: 2724:. Retrieved 2684: 2678: 2667:. Retrieved 2663: 2653: 2628: 2542: 2533: 2513: 2502: 2493: 2484: 2481: 2477: 2470: 2457: 2438: 2423:, such as n- 2421:hydrocarbons 2413: 2400:ferrosilicon 2390:, acts as a 2381: 2348:birefringent 2321: 2298:cladding in 2289: 2283:such as the 2277:nuclear fuel 2270: 2242: 2233: 2224:pilot lights 2209: 2200: 2162:astronomical 2155: 2135: 2120: 2083: 2049: 2029: 2017: 1986: 1970: 1953:Westinghouse 1920: 1893: 1885: 1829: 1809: 1805: 1765: 1736: 1708: 1692:sandblasting 1669: 1636: 1605: 1568: 1549: 1538: 1537:); 2.49 (∥ 1534: 1490:Bulk modulus 1343:(similar to 1335:(similar to 1323: 1316: 1247: 1216: 1209: 1203:in graphite 1198: 1181:Lely process 1178: 1157: 1123: 1098:Soviet Union 1087: 1073: 1064: 1054: 1006: 973: 954: 931: 907: 818: 814: 810: 809: 719: 665: 545: 512: 491: 270:RTECS number 90:Identifiers 80:Carborundum 78:Other names 36: 9308:Deoxidizers 9200:Thiocyanate 9177:Carbon ions 8909:Outer space 8819:Cosmic dust 8784:Abiogenesis 8696:Unconfirmed 8652:Heavy water 8492:Ethanethiol 8407:Cyanoallene 8397:Acetic acid 8367:Methylamine 8251:Diacetylene 8166:Formic acid 8156:Cyanomethyl 7814:Diazenylium 7804:CCP radical 7680:(molecular) 7664:(molecular) 7633:(molecular) 6457:more… 4511:(2): 75–78. 3929:unipass.com 3476:(3): 1363. 3258:Preceramics 2750:12 December 2553:copper reds 2448:printmaking 2220:float glass 2218:of metals, 1927:power lines 1864:Lamborghini 1836:brake disks 1780:Dragon Skin 1704:skateboards 1389:Space group 1166:heat source 1153:silica fume 1100:, in 1923. 1065:carborundum 912:(LEDs) and 903:Lely method 819:carborundum 540:Signal word 425:Appearance 398:Properties 189:100.006.357 151:CHEBI:29390 54:monocrystal 9287:Categories 9272:Carbonates 9231:Fullerides 8824:Cosmic ray 8766:Silylidyne 8729:Hemolithin 8704:Anthracene 8621:Deuterated 8602:Pyrimidine 8412:Ethanimine 8275:Ketenimine 8131:Butadiynyl 7955:Thioformyl 7809:Chloronium 7353:, HoSi, Ho 7260:, SmSi, Sm 6531:SiAs, SiAs 5770:. YouTube. 5653:2020-06-27 5609:1708.04508 5506:1503.07566 5197:2009-07-31 5111:2009-06-06 5039:2011-10-13 5009:2011-10-13 4829:2022-11-10 4717:2009-06-06 4665:Proc. SPIE 4089:2009-06-06 4042:2012-02-09 3964:2009-06-06 3939:2009-06-06 3131:: 229–236. 3015:2005-06-21 2971:2007-10-28 2934:2009-06-06 2849:2009-06-06 2726:2009-06-06 2669:2018-11-27 2585:References 2445:collagraph 2352:optic axis 2336:Mohs scale 2316:moissanite 2013:thyristors 1961:zinc oxide 1906:until the 1904:resistance 1852:McLaren P1 1754:superalloy 1700:sandpapers 1616:phosphorus 1383:Hexagonal 1380:Hexagonal 1303:(α)6H-SiC 1297:(β)3C-SiC 1104:Production 1094:O.V. Losev 1049:H.J. Round 969:saw blades 946:kimberlite 934:moissanite 879:moissanite 524:Pictograms 454:Solubility 416:Molar mass 410:SiC 295:WXQ6E537EW 162:ChemSpider 118:3D model ( 97:CAS Number 83:Moissanite 9318:Gemstones 9293:Abrasives 9205:Fulminate 9049:Compounds 8756:Phosphine 8624:molecules 8557:fullerene 8457:Acetamide 8261:Formamide 8141:Cyanamide 7995:Acetylene 7970:Tricarbon 7881:Methylene 7866:Isoformyl 7771:Triatomic 7544:Molecules 5539:205338373 5423:0008-6223 5371:0038-1098 5346:0704.0285 5310:1476-1122 5248:0883-7694 4769:1903/3602 4693:120854083 4133:136537033 3993:1303.2761 3986:: 83–91. 3747:0810.0056 3651:267488637 3603:139945430 3371:135586321 3051:135784055 2820:128600868 2779:: 773–86. 2691:CRC Press 2658:Pubchem. 2635:CRC Press 2461:Levigator 2279:found in 2152:Astronomy 2131:blue LEDs 2099:Wolfspeed 2090:inverters 2078:sintering 2025:nitriding 1963:pellets. 1957:varistors 1940:spark gap 1936:in series 1874:form for 1812:magnesium 1761:toughness 1628:aluminium 1620:beryllium 1360:Polytype 1330:hexagonal 1326:polymorph 1223:pyrolysis 1205:crucibles 1191:C) in an 950:synthetic 938:meteorite 914:detectors 887:sintering 650:P403+P233 642:P337+P313 638:P332+P313 622:P308+P313 614:P304+P340 610:P302+P352 515:labelling 277:VW0450000 210:206-991-8 202:EC Number 9298:Carbides 9252:Nitrides 9184:Carbides 8743:Linear C 8724:Graphene 8636:Ammonium 8437:Acrolein 8300:Propynal 8285:Methanol 8256:Ethylene 8125:Ammonium 7900:Nitroxyl 7724:Sulfanyl 7668:Imidogen 7662:Nitrogen 7631:Hydrogen 7576:Argonium 7553:Diatomic 7304:SiTb, Si 6950:Si, ReSi 6185:SiP, SiP 6042:silicide 5705:30 April 5531:26205309 5499:: 7783. 5478:37160386 5470:24240243 5379:44542277 5318:19202545 5256:40188237 5174:95550450 5057:Archived 4920:June 10, 4853:June 10, 4778:17230239 4531:Archived 4408:95074081 4357:15329702 4018:94096447 3893:58542120 3839:27878018 3782:27878022 3675:21 March 3550:27878021 3328:97161599 3252:Archived 2843:Archived 2613:(NIOSH). 2563:See also 2483:perform 2473:graphene 2326:used in 2324:gemstone 2296:Zircaloy 1872:sintered 1745:and the 1715:whiskers 1680:grinding 1672:lapidary 1612:nitrogen 1571:bearings 1533:2.28 (⊥ 1337:Wurtzite 1163:resistor 1160:graphite 1069:corundum 1032:ethylene 1019:crucible 976:stardust 942:corundum 891:ceramics 883:abrasive 666:NFPA 704 517::fibres 506:Hazards 477:(χ) 107:409-21-2 32:Corundum 9195:Cyanate 9190:Cyanide 8889:Kerogen 8776:Related 8719:Glycine 8672:Propyne 8631:Ammonia 8529:Benzene 8524:Acetone 8516:or more 8487:Propene 8472:Ethanol 8362:Propyne 8181:Methane 8050:Ketenyl 8000:Ammonia 7385:, ErSi 7295:, GdSi 7183:, PrSi 7106:, LaSi 7066: 5834:Si(III) 5634:4867492 5614:Bibcode 5566:Bibcode 5511:Bibcode 5450:Bibcode 5403:Bibcode 5351:Bibcode 5280:Bibcode 5228:Bibcode 4945:Bibcode 4882:Bibcode 4748:Bibcode 4673:Bibcode 4671:: 263. 4573:May 17, 4550:MOSFETs 4426:Reuters 4388:Bibcode 4365:4328365 4337:Bibcode 4308:: 169. 4113:Bibcode 3998:Bibcode 3830:5099632 3809:Bibcode 3773:5099636 3752:Bibcode 3703:Bibcode 3631:Bibcode 3541:5099635 3520:Bibcode 3478:Bibcode 3351:Bibcode 3308:Bibcode 2800:Bibcode 2607:"#0555" 2485:ex situ 2332:diamond 2328:jewelry 2306:Jewelry 2261:Martian 2251:and as 2245:neutron 2005:MOSFETs 1944:ionized 1938:with a 1908:voltage 1860:Ferrari 1856:Bentley 1757:turbine 1643:type-II 1632:gallium 1588:current 1509:(W⋅m⋅K) 1473:Bandgap 1447:4.3596 1369:6H (α) 1363:3C (β) 1345:diamond 1300:4H-SiC 1096:in the 1079:furnace 1034:(1882). 998:History 961:Arizona 867:silicon 792:what is 790: ( 434:Density 246:PubChem 9247:Oxides 9041:carbon 8940:Tholin 8761:Pyrene 8206:Silane 8176:Ketene 7678:Oxygen 7398:Yb, Si 7229:, NdSi 6916:Si, Ta 6897:, HfSi 6881:Si, Hf 6776:Si, Pd 6764:Si, Pd 6731:Si, Rh 6706:Si, Ru 6652:Si, Zr 6505:Si, Cu 6493:Si, Cu 6481:Si, Cu 5869:Si(IV) 5813:Si(II) 5677: 5632: 5564:: 15. 5537: 5529: 5476: 5468: 5421: 5395:Carbon 5377: 5369: 5316: 5308: 5254: 5246: 5172: 5135: 5083: 4801: 4776: 4691: 4647:6 June 4623: 4595:6 June 4479: 4406: 4363: 4355: 4329:Nature 4282: 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