220:
1727:
1751:
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27:
376:
of the generation probability of positive secondary ions, while caesium primary ions often are used when electronegative elements are being investigated. For short pulsed ion beams in static SIMS, LMIGs are most often deployed for analysis; they can be combined with either an oxygen gun or a caesium gun during elemental depth profiling, or with a C
443:
The amount of surface cratering created by the process depends on the current (pulsed or continuous) and dimensions of the primary ion beam. While only charged secondary ions emitted from the material surface through the sputtering process are used to analyze the chemical composition of the material,
375:
The choice of the ion species and ion gun respectively depends on the required current (pulsed or continuous), the required beam dimensions of the primary ion beam and on the sample which is to be analyzed. Oxygen primary ions are often used to investigate electropositive elements due to an increase
516:
SIMS can be used in the forensics field to develop fingerprints. Since SIMS is a vacuum based method, it is necessary to determine the order of usage along with other methods of analysis for fingerprints. This is because the mass of the fingerprint significantly decreases after exposure to vacuum
400:
separates the ions in a field-free drift path according to their velocity. Since all ions possess the same kinetic energy the velocity and therefore time of flight varies according to mass. It requires pulsed secondary ion generation using either a pulsed primary ion gun or a pulsed secondary ion
223:
Schematic of a typical dynamic SIMS instrument. High energy (usually several keV) ions are supplied by an ion gun (1 or 2) and focused on to the target sample (3), which ionizes and sputters some atoms off the surface (4). These secondary ions are then collected by ion lenses (5) and filtered
108:
to determine the elemental, isotopic, or molecular composition of the surface to a depth of 1 to 2 nm. Due to the large variation in ionization probabilities among elements sputtered from different materials, comparison against well-calibrated standards is necessary to achieve accurate
512:
SIMS is used for quality assurance purposes in the semiconductor industry and for the characterization of natural samples from this planet and others. More recently, this technique is being applied to nuclear forensics, and a nanoscale version of SIMS, termed NanoSIMS, has been applied to
1031:
C. Engrand; J. Kissel; F. R. Krueger; P. Martin; J. Silén; L. Thirkell; R. Thomas; K. Varmuza (2006). "Chemometric evaluation of time-of-flight secondary ion mass spectrometry data of minerals in the frame of future in situ analyses of cometary's material by COSIMA onboard ROSETTA".
129:, Austria. In the mid-1950s Honig constructed a SIMS instrument at RCA Laboratories in Princeton, New Jersey. Then in the early 1960s two SIMS instruments were developed independently. One was an American project, led by Liebel and Herzog, which was sponsored by
462:. Static SIMS is the process involved in surface atomic monolayer analysis, or surface molecular analysis, usually with a pulsed ion beam and a time of flight mass spectrometer, while dynamic SIMS is the process involved in bulk analysis, closely related to the
343:
source, generates Cs primary ions. Cesium atoms vaporize through a porous tungsten plug and are ionized during evaporation. Depending on the gun design, fine focus or high current can be obtained. A third source type, the
156:, where the primary ion current density is so small that only a negligible fraction (typically 1%) of the first surface layer is necessary for surface analysis. Instruments of this type use pulsed primary ion sources and
440:, depending on the type of instrumentation used, the primary ion beam used and the analytical area, and other factors. Samples as small as individual pollen grains and microfossils can yield results by this technique.
879:
S. Ninomiya; K. Ichiki; H. Yamada; Y. Nakata; T. Seki; T. Aoki; J. Matsuo (2009). "Precise and fast secondary ion mass spectrometry depth profiling of polymer materials with large Ar cluster ion beams".
372:. The LMIG provides a tightly focused ion beam (<50 nm) with moderate intensity and is additionally able to generate short pulsed ion beams. It is therefore commonly used in static SIMS devices.
469:
Dynamic secondary ion mass spectrometry (DSIMS) is a powerful tool for characterizing surfaces, including the elemental, molecular, and isotopic composition and can be used to study the structure of
1156:
Bright, Nicholas J.; Willson, Terry R.; Driscoll, Daniel J.; Reddy, Subrayal M.; Webb, Roger P.; Bleay, Stephen.; Ward, Neil I.; Kirkby, Karen J.; Bailey, Melanie J. (2013-07-10).
505:
was the first instrument to determine the composition of cometary dust in situ with secondary ion mass spectrometry during the spacecraft's 2014–2016 close approaches to comet
244:
sample chamber holding the sample and the secondary ion extraction lens, (4) a mass analyser separating the ions according to their mass-to-charge ratio, and (5) a detector.
1471:
109:
quantitative results. SIMS is the most sensitive surface analysis technique, with elemental detection limits ranging from parts per million to parts per billion.
401:
extraction. It is the only analyzer type able to detect all generated secondary ions simultaneously, and is the standard analyzer for static SIMS instruments.
421:
is similar to an electron multiplier, with lower amplification factor but with the advantage of laterally-resolved detection. Usually it is combined with a
236:, (2) a primary ion column, accelerating and focusing the beam onto the sample (and in some devices an opportunity to separate the primary ion species by
612:
1654:
1649:
1401:
31:
Old magnetic sector SIMS, model IMS 3f, succeeded by the models 4f, 5f, 6f, 7f and most recently, 7f-Auto, launched in 2013 by the manufacturer
750:
Magee, C. W.; Honig, Richard E. (1978). "Secondary ion quadrupole mass spectrometer for depth profiling design and performance evaluation".
1506:
1456:
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392:
uses a combination of an electrostatic analyzer and a magnetic analyzer to separate the secondary ions by their mass-to-charge ratio. A
272:
of gas molecules within the detector must be large compared to the size of the instrument), and it also limits surface contamination by
1481:
1672:
1562:
696:
Castaing, R. & Slodzian, G. J. (1962). "Optique corpusculaire—premiers essais de microanalyse par emission ionique secondaire".
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348:(LMIG), operates with metals or metallic alloys, which are liquid at room temperature or slightly above. The liquid metal covers a
200:
1755:
1707:
1697:
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454:
339:). This type of ion gun is easy to operate and generates roughly focused but high current ion beams. A second source type, the
153:
224:
according to atomic mass (6), then projected onto an electron multiplier (7, top), Faraday cup (7, bottom), or CCD screen (8).
168:
and also by
Charles Evans & Associates. The Castaing and Slodzian design was developed in the 1960s by the French company
1386:
417:
an impact of a single ion starts off an electron cascade, resulting in a pulse of 10 electrons which is recorded directly. A
268:). This is needed to ensure that secondary ions do not collide with background gases on their way to the detector (i.e. the
1391:
1624:
104:
and collecting and analyzing ejected secondary ions. The mass/charge ratios of these secondary ions are measured with a
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measures the ion current hitting a metal cup, and is sometimes used for high current secondary ion signals. With an
1687:
1542:
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1416:
397:
157:
141:
by R. Castaing for the PhD thesis of G. Slodzian. These first instruments were based on a magnetic double focusing
1787:
1310:
388:
Depending on the SIMS type, there are three basic analyzers available: sector, quadrupole, and time-of-flight. A
121:
observed a release of positive ions and neutral atoms from a solid surface induced by ion bombardment. Improved
1692:
1677:
125:
technology in the 1940s enabled the first prototype experiments on SIMS by Herzog and Viehböck in 1949, at the
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1629:
506:
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separates the masses by resonant electric fields, which allow only the selected masses to pass through. The
1712:
1603:
1406:
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418:
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1237:
Secondary Ion Mass
Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis
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149:
161:
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345:
138:
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1209:
Secondary Ion Mass
Spectrometry: Basic Concepts, Instrumental Aspects, Applications, and Trends
490:
1436:
1265:
Surface and Thin Film
Analysis: A Compendium of Principles, Instrumentation, and Applications
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73:
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process, using a DC primary ion beam and a magnetic sector or quadrupole mass spectrometer.
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989:
889:
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screen, and signals are recorded either with a CCD-camera or with a fluorescence detector.
207:
based on the Liebl and Herzog design, and produced by
Australian Scientific Instruments in
181:
126:
980:
levels in the
Proterozoic atmosphere estimated from analyses of individual microfossils".
793:
Benninghoven, A (1969). "Analysis of sub-monolayers on silver by secondary ion emission".
8:
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1253:, IM Publications, Chichester UK and SurfaceSpectra, Manchester, UK, 2001 (789 pages),
1158:"Chemical changes exhibited by latent fingerprints after exposure to vacuum conditions"
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626:
Honig, R. E. (1958). "Sputtering of surfaces by positive ion beams of low energy".
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559:
437:
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356:
source is able to operate with elemental gallium, recently developed sources for
219:
177:
148:
In the 1970s, K. Wittmaack and C. Magee developed SIMS instruments equipped with
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1446:
1134:
269:
563:
1771:
1593:
1353:
1181:
1142:
814:
577:
Herzog, R. F. K., Viehboeck, F. (1949). "Ion source for mass spectrography".
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118:
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these represent a small fraction of the particles emitted from the sample.
422:
715:
Wittmaack, K. (1975). "Pre-equilibrium variation of secondary ion yield".
288:
are employed. In one, ions of gaseous elements are usually generated with
1598:
1537:
1516:
1286:
1030:
410:
352:
tip and emits ions under influence of an intense electric field. While a
237:
122:
1119:"Subcellular quantitative imaging of metabolites at the organelle level"
1001:
1373:
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273:
261:
97:
92:) is a technique used to analyze the composition of solid surfaces and
77:
878:
771:
682:
647:
1053:
901:
828:
S. Hofmann (2004). "Sputter-depth profiling for thin-film analysis".
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180:. Recent developments are focusing on novel primary ion species like
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152:. Around the same time, A. Benninghoven introduced the method of
160:
and were developed by
Benninghoven, Niehuis and Steffens at the
1076:"Dynamic Secondary Ion Mass Spectrometry (SIMS/DSIMS Analysis)"
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361:
309:
253:
241:
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32:
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In the field of surface analysis, it is usual to distinguish
305:
301:
26:
1223:
Secondary Ion Mass
Spectrometry: Principles and Applications
380:
or gas cluster ion source during molecular depth profiling.
228:
A secondary ion mass spectrometer consists of (1) a primary
695:
357:
265:
188:
130:
1155:
428:
1342:
949:"SIMS Detection Limits of Selected Elements in Si and SiO
436:
for most trace elements are between 10 and 10 atoms per
1267:, pp. 86–121, Wiley-VCH, Weinheim, Germany, 2002,
975:
661:
Liebl, H. J. (1967). "Ion microprobe mass analyzer".
1207:Benninghoven, A., RĂĽdenauer, F. G., Werner, H. W.,
203:(SHRIMP) is a large-diameter, double-focusing SIMS
100:the surface of the specimen with a focused primary
1098:The University of Edinburgh: School of Geosciences
916:
1769:
489:in the early 1980s. DSIMS is mainly used by the
276:of background gas particles during measurement.
1251:ToF-SIMS: Surface Analysis by Mass Spectrometry
792:
545:
1311:
1225:, Clarendon Press, Oxford, 1989 (341 pages),
924:"Cesium Ion Gun System for CAMECA SIMS Units"
714:
1235:Wilson, R. G., Stevie, F. A., Magee, C. W.,
660:
625:
611:: CS1 maint: multiple names: authors list (
16:Surface chemical analysis and imaging method
969:
447:
145:and used argon for the primary beam ions.
1318:
1304:
1221:Vickerman, J. C., Brown, A., Reed, N. M.,
827:
749:
195:, or large gas cluster ion beams (e.g., Ar
133:at GCA Corp, Massachusetts, for analyzing
25:
1239:, John Wiley & Sons, New York, 1989,
1034:Rapid Communications in Mass Spectrometry
976:Kaufman, A.J.; Xiao, S. (2003). "High CO
953:Under Normal Depth Profiling Conditions"
218:
201:sensitive high-resolution ion microprobe
1200:
1116:
429:Detection limits and sample degradation
320:), or even ionized molecules such as SF
1770:
1211:, Wiley, New York, 1987 (1227 pages),
1325:
1299:
958:. Evans Analytical Group. May 4, 2007
279:
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13:
214:
14:
1799:
1279:
158:time-of-flight mass spectrometers
1749:
1737:
1726:
1725:
1117:Siuzdak, Gary (September 2023).
752:Review of Scientific Instruments
383:
240:or to pulse the beam), (3) high
139:University of Paris-Sud in Orsay
1174:10.1016/j.forsciint.2013.03.047
1149:
1110:
1094:"NERC Ion Mirco-Probe Facility"
1086:
1068:
1024:
941:
872:
717:Int. J. Mass Spectrom. Ion Phys
496:
477:, and the surface chemistry of
86:Secondary-ion mass spectrometry
20:Secondary-ion mass spectrometry
1249:Vickerman, J. C., Briggs, D.,
1162:Forensic Science International
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786:
743:
708:
689:
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619:
570:
548:"Rays of positive electricity"
539:
501:The COSIMA instrument onboard
390:sector field mass spectrometer
143:sector field mass spectrometer
1:
368:use alloys which lower their
830:Phil. Trans. R. Soc. Lond. A
737:10.1016/0020-7381(75)80005-2
532:
398:time of flight mass analyzer
7:
1589:Microchannel plate detector
928:www.peabody-scientific.com/
882:Rapid Commun. Mass Spectrom
520:
419:microchannel plate detector
404:
10:
1804:
1135:10.1038/s42255-023-00882-z
117:In 1910 British physicist
112:
60:Solid surfaces, thin films
1721:
1663:
1612:
1576:
1525:
1372:
1333:
564:10.1080/14786441008636962
513:pharmaceutical research.
507:67P/Churyumov–Gerasimenko
481:. DSIMS was developed by
247:
150:quadrupole mass analyzers
69:
64:
56:
48:
40:
24:
1604:Langmuir–Taylor detector
1285:Tutorial pages for SIMS
1263:Bubert, H., Jenett, H.,
815:10.1002/pssb.19690340267
448:Static and dynamic modes
394:quadrupole mass analyzer
256:with pressures below 10
546:Thomson, J. J. (1910).
232:generating the primary
1788:Semiconductor analysis
1548:Quadrupole mass filter
850:10.1098/rsta.2003.1304
599:10.1103/PhysRev.76.855
491:semiconductor industry
225:
187:, ionized clusters of
795:Physica Status Solidi
473:, the composition of
222:
162:University of MĂĽnster
74:Fast atom bombardment
1201:General bibliography
346:liquid metal ion gun
127:University of Vienna
1584:Electron multiplier
1553:Quadrupole ion trap
1046:2006RCMS...20.1361E
1002:10.1038/nature01902
994:2003Natur.425..279K
894:2009RCMS...23.1601N
842:2004RSPTA.362...55H
807:1969PSSBR..34..169B
764:1978RScI...49..477M
729:1975IJMSI..17...39W
675:1967JAP....38.5277L
640:1958JAP....29..549H
591:1949PhRv...76..855H
415:electron multiplier
294:electron ionization
209:Canberra, Australia
137:, the other at the
21:
341:surface ionization
280:Primary ion source
226:
19:
1778:Mass spectrometry
1765:
1764:
1327:Mass spectrometry
1123:Nature Metabolism
988:(6955): 279–282.
888:(11): 1601–1606.
772:10.1063/1.1135438
683:10.1063/1.1709314
669:(13): 5277–5280.
648:10.1063/1.1723219
205:sector instrument
174:materials science
106:mass spectrometer
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52:Mass spectrometry
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65:Other techniques
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1756:WikiProject
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1538:Wien filter
1359:MS software
698:Microscopie
455:static SIMS
423:fluorescent
411:Faraday cup
298:noble gases
254:high vacuum
238:Wien filter
154:static SIMS
123:vacuum pump
1783:Ion source
1772:Categories
1374:Ion source
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962:2007-11-22
933:8 November
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464:sputtering
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579:Phys. Rev
552:Phil. Mag
533:Citations
479:catalysts
337:fullerene
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1080:Lucideon
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475:polymers
405:Detector
350:tungsten
286:ion guns
234:ion beam
102:ion beam
57:Analytes
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