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Pro Electron

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1996: 121:, and essentially re-allocated several of the rarely used heater designations (first letter of the part number) for semiconductors. The second letter was used in a similar way to the valves naming convention: "A" for signal diode, "C" for low-power bipolar transistor or triode, "D" for high-power transistor (or triode), and "Y" for rectifier, but other letter designations did not follow the vacuum tube mode so closely. 1273:(see below) and the operating temperature range was encoded in the last digit of the serial number. The specification was changed in 1973 to allow longer serial numbers. For designations with a serial number of more than three digits the third initial letter encodes the temperature range. Optionally, a version letter (A, B, ...) and / or a package designation can follow after the serial number. 416:) P=300mA C=triode U=100mA F=pentode (low power) L=pentode (high power) Y=Single-phase rectifier Z=Full-wave rectifier * Note: some 6.3 volt heater types have a split heater allowing series (12.6 volt; the default for 1272:
The integrated circuit designation consists of three letters, followed by a serial number of three to five digits. Initially, only three-digit serial numbers were allowed. For designations with a three-digit serial number the third initial letter had a defined meaning for digital integrated circuits
1105:
BC549C / |--- \___ variant (A,B,C for transistors implies low, medium or high gain) / | \____ serial number (at least 3 digits or letter and 2 digits) / device type: A=Ge A=Signal diode B=Si C=LF low-power transistor D=LF Power transistor F=RF transistor (or
1942:), an FCH131 is a dual 4-input NAND gate, and an FLH131 is an 8-input NAND gate (equivalent to 7430). To lessen the confusion at least for the 7400 series, at some point manufacturers included the well-known 7400 series designation both in their literature and on the integrated circuits themselves. 124:
The three digits (or letter followed by two digits) after the first two letters were essentially a sequence number, with (at first) a vestige of the valve-era convention that the first one or two digits would indicate the base (package) type in examples such as in this family of general-purpose
65:
The goal of Pro Electron is to allow unambiguous identification of electronic parts, even when made by several different manufacturers. To this end, manufacturers register new devices with the agency and receive new type designators for them.
2496: 1483: 1344: 832:
the last digit often indicated a particular specification or application grouping, e.g. the AF117 and AF127 were similar IF amplifier devices in different cases; the BC109, BC149, BC169 and BC549 are similar low-noise
820:
Following these two letters is a 3- or 4-digit serial number (or another letter then digits), assigned by Pro Electron. It is not always merely a sequence number; there is sometimes information conveyed in the number:
1567: 1452: 1134:
used designations derived from the Pro Electron scheme. In particular, the first letter specifying the material differed while the second letter followed the table above (with the few exceptions for KME noted below).
211:
Unlike the tube naming convention, if there are two transistors in a single envelope, the type letter was never repeated - so a dual NPN RF transistor might get a type "BFM505" rather than something like "BFF505" for
825:
In early devices only, the serial number often indicated the case/package type (e.g. AF114-7 for TO-5 case, while AF124-7 were TO-72 versions of the same transistors); modern surface-mount devices often begin with
2035: 1671: 1614: 1099:
Note: A BC546 might only be marked "C546" by some manufacturers, thus possibly creating confusion with JIS abbreviated markings, because a transistor marked "C546" might also be a 2SC546.
1690: 202:, other than some special (e.g. television signal-processing) chips, did not greatly take hold (even in Europe). Other popular designation systems were used for many integrated circuits. 1118:, and Cuba mostly used Pro Electron designations for discrete semiconductors just like Western Europe. Starting in 1971, in Poland the letter "P" was inserted, e.g. BUY54 became BUY 845:
Suffixes may be used, letters or perhaps blocks of digits delimited by "/" or "-" from the serial number, often without fixed meanings but some of the more common conventions are:
1441: 2343: 1652: 2117:
TGL 38015: Halbleiterbauelemente; Diskrete Halbleiterbauelemente und integrierte Halbleiterschaltkreise; Bildung der Typbezeichnung und Gestaltung der Typkennzeichnung
2042: 1115: 228:"L" in the context of transistors designates RF power (transmitting) transistors; for valves it meant a high-power pentode tube (the usual choice for power RF) 2377: 1710: 2088:
Matuschek (1973). "Typenbezeichnungssystem für polnische Halbleiterbauelemente" [System of type designations for Polish semiconductor devices].
198:
Pro Electron naming for transistors and Zener diodes has been widely taken up by semiconductor manufactures around the world. Pro Electron naming of
2115: 2122:
TGL 38015: Semiconductor Devices; Discrete Semiconductor Devices and Integrated Semiconductor Circuits; Formation of Type Designation and Marking
1986: 1748:
FCH171 // \ \__ serial number (including temperature range) // \___ H=gate ("Combinatorial circuit"), J=flip-flop, K=monostable, L=
2181: 215:
Although some of the most popular devices conform to a pattern of serial numbers that identified package type and polarity, many do not.
408:/ \___ one letter per valve unit in the tube: D=1.4v or less A=single-diode (low power) E=6.3v* B=double-diode ( 155: 863:
for voltage reference diodes letters show the tolerance ("A","B","C","D","E" indicate 1%/2%/5%/10*/20%) and may be followed by the V
2352: 1934:
Unfortunately the serial number does not specify the same type of gate in each family, e.g. while an FJH131 is a quadruple 2-input
2491: 752: 1106:
FET) P=Photosensitive transistor etc. T=Triac or thyristor Y=Rectifier diode Z=Zener diode
1981: 1961: 1253: 386: 118: 1808: 1773: 2390: 2155: 1249: 1723: 1920: 1904: 1832: 1812: 1800: 1389: 1123: 218:
The letters assigned for the second character of transistor and diode type numbers differ in several ways, e.g.
2517: 2419: 2512: 1956: 1261: 1131: 799: 829:
early silicon transistors followed the convention of using a middle digit of 0-5 for NPN and 6-9 for PNP.
2522: 2222: 1860: 1761: 1729: 1472: 2435: 1976: 552: 2259: 2076: 672:, programmable unijunction transistors (PUT), silicon bidirectional switch (SBS), opto-triacs etc. 1556: 1296: 2293:
Discrete Semiconductors - Integrated Circuits - Power Semiconductors - Delivery Program 1973/74
1971: 1327: 669: 32: 2460: 1314: 2319: 1896: 1872: 1844: 405: 1966: 1880: 1852: 1704: 764: 642: 282: 98: 1745:
The combination of first letter and second letter is assigned to a specific manufacturer.
8: 874:
Examples of suffixes and manufacturers' extensions to the basic sequence number include:
772: 199: 113:
Pro Electron took the popular European coding system in use from around 1934 for valves (
205: 2001: 1331: 565: 400:/ \ \\__ last digit(s)=serial number / \ \__ first digit(s)=base (3=8pin 8,18,80= 2415: 2386: 2097: 1684: 1665: 302: 298: 86: 231:"Z" is used for semiconductor Zener diodes instead of (full-wave) rectifier valves ( 1757: 1067: 278: 255:(or any semiconductor with junctions in a material with a band gap of 0.6 to 1.0eV) 44: 24: 1102:
Short summary of the most common semiconductor diode and transistor designations:
1646: 1360: 993: 917: 836:
some modern devices use letters, such as "B" to indicate HBT bipolar transistors.
795: 740: 627: 597: 593: 526: 338: 2412:
Marking of domestic and foreign electronic components, reference guide, volume 2
2065: 1309: 274: 2291: 2506: 2101: 1749: 609: 401: 342: 28: 1127: 512: 241: 2041:(16 ed.). Brussels, Belgium: Pro Electron. July 2010. Archived from 1939: 1928: 1912: 1840: 1824: 803: 270: 232: 114: 92: 40: 2499:, Pro-Electron, Brussels, Belgium, 6/2008; with tube designation systems 2497:
European Type Designation Code System for Electronic Components (15 ed)
1888: 1868: 1856: 1848: 1788: 1776: 1226:
Optoisolator (varicaps were included with other diodes under letter A)
623: 79: 2408:Маркировка радиодеталей отечественных и зарубежных Справ. пособие т. 2 1935: 1357:
Digital integrated circuit that is not part of a family ("solitary")
914: 897: 703: 657: 252: 206:
Differences between Pro Electron and earlier valve-naming conventions
1995: 1864: 1234:
MOSFET (Pro Electron includes MOSFETs in letters C, D, F, L, S, U)
768: 294: 51: 2379:
Handbook of Integrated Circuits (IC's) Equivalents and Substitutes
2036:"European Type Designation Code System for Electronic Components" 1924: 1916: 1908: 1900: 1892: 1884: 1876: 1836: 1828: 1820: 1816: 1804: 1796: 1792: 1784: 1780: 1769: 1765: 1376: 849:
for small-signal transistors "A" to "C" often means low to high h
469: 261: 55: 428: 1036: 722: 684: 36: 1951: 1257: 707: 665: 436: 397: 173: 168: 142: 23:
is the European type designation and registration system for
856:
numeric suffixes may be used as an alternative way to show h
2128:(in German). Leipzig: Verlag für Standardisierung. May 1986 661: 578:
High-frequency, high-power transistor (for transmitters), R
365:(Mullard–Philips) tubes for a 100mA series heater supply, 2470:(in Italian). Milano: Etas Kompass. March 1973. p. 6 1753: 1001: 997: 906:
an AC127 (TO-1 case) with built-on heat-conducting block
534: 530: 417: 62:(EECA) and since then operates as an agency of the EECA. 331:(Mullard–Philips) tubes for a 300mA series heater supply 242:
Frequently used first letters in European active devices
936:
Silicon, small-signal transistor ("allround" or "G.P.")
423: 60:
European Electronic Component Manufacturers Association
2351:(in German). Heilbronn: AEG-Telefunken. Archived from 942:
the "L" indicates Base-Collector-Emitter pinout while
860:(e.g. BC327-25), or voltage rating (e.g. BUK854-800A). 277:
semiconductors with a band gap of 1.3eV or more, like
1021:
Silicon high-frequency, high-power (for transmitters)
2453: 2414:] (in Russian). Moscow: Solon-P. pp. 8–10. 2224:
Mullard semiconductors quick reference guide 1972-73
1991: 1341:
Digital integrated circuit that is part of a family
1293:
Digital integrated circuit that is part of a family
980:
the "B" suffix here indicates medium voltage (-100V
926:the "Y40" sequence number implies industrial uses, 2254: 2252: 2250: 2248: 2246: 2244: 2066:Datasheet for BC549, with A,B and C gain groupings 867:value, e.g. 6V8 for 6.8 Volts or 18V for 18 volts. 840: 2375: 2504: 2428: 2341: 1090:"C" indicates 5% tolerance, "5V6" indicates 5.6V 103:ECC83 – 6.3 volt heater noval dual triode 2241: 944:the "B" suffix indicates medium gain (240-500 h 420:pins 4 to 5) or parallel (6.3 volt) operation. 311:(Mullard–Philips) 1.4V (or less) filament tubes 74:Examples of Pro Electron type designators are: 2399: 2314: 2312: 2310: 2030: 2028: 2026: 2024: 2022: 2020: 2018: 721:High-power switching transistors, bipolar or 497:High-power, low-frequency power transistor, R 429:The first letter gives the semiconductor type 2442:(in Italian). January 1973. pp. 100–104 2286: 2284: 2282: 2280: 2157:Analog Integrated Circuits Data Book 1976/77 1109: 2307: 683:Low-power switching transistor, bipolar or 2335: 2015: 1987:East German integrated circuit designation 710:, silicon bidirectional switch (SBS), etc. 437:The second letter denotes the intended use 371:Mixed digital/analogue integrated circuits 319:(Mullard–Philips) tubes with a 6.3V heater 2405: 2277: 2217: 2215: 2213: 2211: 2209: 2207: 2205: 2203: 2201: 2150: 2148: 2146: 2144: 2142: 2087: 2077:datasheet for BUK854-800A (800 volt IGBT) 1740: 1035:Silicon switching transistor, bipolar or 928:the "R" indicates reduced specifications 109:SAA1300 – Digital integrated circuit 2369: 974:Silicon Darlington-pair power transistor 702:High-power control or switching device: 2108: 2096:(10). Berlin: VEB Verlag Technik: 340. 1260:- Silicon power transistor from Tesla; 1252:- Germanium power transistor from KME; 1242:Sensors other than radiation detectors 656:Low-power control or switching device: 2505: 2198: 2174: 2139: 1416:serial number with more than 3 digits 1267: 2406:Садченков, Дмитрий Андреевич (2009). 1982:Soviet integrated circuit designation 69: 2187:. SGS-Thomson Microelectronics. 1984 1197:Multiple materials (e.g. Si + GaAs) 815: 424:Semiconductor diodes and transistors 350:Solitary digital integrated circuits 106:A63EAA00XX01 – Color TV picture tube 2182:"HCC4011B/12B/23B HCF4011B/12B/23B" 1076:a BU508 with integral damper diode 50:Pro Electron was set up in 1966 in 13: 2345:Die Flip-Flops der DTLZ-FP-Familie 14: 2534: 2485: 1084:Silicon regulator ("Zener") diode 379: 58:. In 1983 it was merged with the 1994: 1962:Mullard–Philips tube designation 956:Silicon, small-signal transistor 870:"R" can mean "reverse polarity". 389:for details. A brief summary of 387:Mullard–Philips tube designation 337:Devices without junctions, e.g. 119:Mullard–Philips tube designation 91:BZY88C5V1 – Silicon 5.1 volt 1435:No temperature range specified 1390:Mixed-signal integrated circuit 1183:Compound materials (GaAs etc.) 1124:Kombinat Mikroelektronik Erfurt 1070:horizontal deflection circuits) 1044:SOT-23 (surface-mount) package 841:Suffixes and version specifiers 78:AD162 – Germanium power 2321:Semiconductor survey 1972/1973 2081: 2070: 2059: 966:of around 250 (140-400 range) 221:"B" tends to be used for dual 1: 2436:"equivalenze dei transistori" 2008: 1957:JIS semiconductor designation 1405:Operating temperature ranges 264:(or band gap of 1.0 to 1.3eV) 1627:Common package designations 1494:−55 °C to +125 °C 1373:Analogue integrated circuit 1147:1st letter KME East Germany 1132:Tesla (Czechoslovak company) 753:Surface-acoustic-wave device 458:Low-power/small-signal diode 7: 2324:. Heilbronn: AEG-Telefunken 1945: 1599:−40 °C to +85 °C 1578:−25 °C to +85 °C 1550:−25 °C to +70 °C 1534:+15 °C to +55 °C 1518:−10 °C to +85 °C 784:High-power rectifying diode 325:Digital integrated circuits 10: 2539: 2376:Bernard B. Babani (1974). 2090:Radio Fernsehen Elektronik 1915:) GR=interface devices by 1760:, Y=miscellaneous etc. FC= 1066:Silicon high-voltage (for 1052:Silicon Thyristor or TRIAC 482:Small signal transistor, R 356:Linear integrated circuits 2230:. London: Mullard Limited 1977:Russian tube designations 1466:0 °C to +70 °C 1415: 1412: 1409: 1256:- optoisolator from KME; 1110:Usage in the Eastern Bloc 297:less than 0.6eV, such as 194:9 for low noise/high gain 2342:P. Sieber; J. Kuhlmann. 1144:1st letter Pro Electron 1413:3-digit serial number) 1392:(analogue and digital) 1328:Charge-transfer devices 1218:KME East Germany usage 900:small signal transistor 82:for audio frequency use 33:liquid crystal displays 2461:"Integrati Logici CML" 2266:(in Italian). May 1969 1972:RETMA tube designation 1741:Digital logic families 1027:BLY49 in a TO-66 case 853:, such as in: BC549C), 691:G > 15K/W 541:G > 15K/W 486:G > 15K/W 293:Semiconductors with a 2518:Electrical components 2296:. München: Siemens AG 2163:. München: Siemens AG 1724:Small Outline Package 641:Radiation generator ( 191:8 for general purpose 2513:Electrical standards 2385:. London: Bernards. 2260:"circuiti integrati" 1967:RMA tube designation 1895:(MEM1000 series) GH= 1705:dual in-line package 1009:a BF493 with a -350V 765:Frequency multiplier 622:Radiation detector ( 513:Tunnel (Esaki-)diode 391:just the more common 184:... where x may be: 99:light emitting diode 1628: 1406: 1332:switched capacitors 1268:Integrated circuits 773:step recovery diode 729:G ≤ 15K/W 582:G ≤ 15K/W 501:G ≤ 15K/W 200:integrated circuits 2002:Electronics portal 1626: 1404: 1264:- LED from Tesla. 962:-25 indicates an h 566:Hall effect sensor 303:infrared detectors 188:7 for high voltage 70:Designation system 2523:Electronics lists 2468:Radio Elettronica 2358:on 7 January 2020 1919:(7500 series) GT= 1738: 1737: 1687:(QFP) non leaded 1685:Quad Flat Package 1666:Quad Flat Package 1624: 1623: 1402: 1401: 1246: 1245: 1210: 1209: 1150:1st letter Tesla 1114:Poland, Hungary, 1097: 1096: 1058:800V-rated TRIAC 996:(high-frequency) 816:The serial number 813: 812: 529:(high-frequency) 299:indium antimonide 182: 181: 87:Silicon rectifier 45:cathode ray tubes 25:active components 2530: 2479: 2478: 2476: 2475: 2465: 2457: 2451: 2450: 2448: 2447: 2432: 2426: 2425: 2403: 2397: 2396: 2384: 2373: 2367: 2366: 2364: 2363: 2357: 2350: 2339: 2333: 2332: 2330: 2329: 2316: 2305: 2304: 2302: 2301: 2288: 2275: 2274: 2272: 2271: 2256: 2239: 2238: 2236: 2235: 2229: 2219: 2196: 2195: 2193: 2192: 2186: 2178: 2172: 2171: 2169: 2168: 2162: 2152: 2137: 2136: 2134: 2133: 2127: 2112: 2106: 2105: 2085: 2079: 2074: 2068: 2063: 2057: 2056: 2054: 2053: 2047: 2040: 2032: 2004: 1999: 1998: 1629: 1625: 1465: 1407: 1403: 1276: 1275: 1212: 1211: 1138: 1137: 877: 876: 441: 440: 412:shared cathode, 406:Mini 7-pin (B7G) 279:gallium arsenide 128: 127: 41:electronic tubes 2538: 2537: 2533: 2532: 2531: 2529: 2528: 2527: 2503: 2502: 2488: 2483: 2482: 2473: 2471: 2463: 2459: 2458: 2454: 2445: 2443: 2434: 2433: 2429: 2422: 2404: 2400: 2393: 2382: 2374: 2370: 2361: 2359: 2355: 2348: 2340: 2336: 2327: 2325: 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357: 351: 345: 332: 326: 320: 314: 313: 312: 309: 285: 265: 256: 243: 240: 239: 238: 237: 236: 229: 226: 216: 213: 207: 204: 196: 195: 192: 189: 180: 179: 176: 171: 165: 164: 161: 158: 152: 151: 148: 145: 139: 138: 135: 132: 111: 110: 107: 104: 101: 95: 89: 83: 71: 68: 37:sensor devices 29:semiconductors 9: 6: 4: 3: 2: 2535: 2524: 2521: 2519: 2516: 2514: 2511: 2510: 2508: 2498: 2495: 2493: 2490: 2489: 2469: 2462: 2456: 2441: 2437: 2431: 2423: 2417: 2413: 2409: 2402: 2394: 2392:0 900162 35 X 2388: 2381: 2380: 2372: 2354: 2347: 2346: 2338: 2323: 2322: 2315: 2313: 2311: 2295: 2294: 2287: 2285: 2283: 2281: 2265: 2261: 2255: 2253: 2251: 2249: 2247: 2245: 2226: 2225: 2218: 2216: 2214: 2212: 2210: 2208: 2206: 2204: 2202: 2183: 2177: 2159: 2158: 2151: 2149: 2147: 2145: 2143: 2123: 2119: 2118: 2111: 2103: 2099: 2095: 2092:(in German). 2091: 2084: 2078: 2073: 2067: 2062: 2048:on 2017-07-14 2044: 2037: 2031: 2029: 2027: 2025: 2023: 2021: 2019: 2014: 2003: 1997: 1992: 1988: 1985: 1983: 1980: 1978: 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1440: 1437: 1434: 1433: 1429: 1426: 1423: 1420: 1419: 1408: 1397: 1394: 1391: 1388: 1385: 1384: 1381: 1379: 1375: 1372: 1369: 1368: 1365: 1363: 1359: 1356: 1353: 1352: 1349: 1347: 1343: 1340: 1337: 1336: 1333: 1329: 1326: 1323: 1322: 1319: 1317: 1313: 1311: 1308: 1305: 1304: 1301: 1299: 1295: 1292: 1289: 1288: 1284: 1281: 1278: 1277: 1274: 1265: 1263: 1259: 1255: 1251: 1241: 1238: 1237: 1233: 1230: 1229: 1225: 1222: 1221: 1217: 1214: 1213: 1205: 1202: 1199: 1196: 1195: 1191: 1188: 1185: 1182: 1181: 1177: 1174: 1171: 1168: 1167: 1163: 1160: 1157: 1154: 1153: 1149: 1146: 1143: 1140: 1139: 1136: 1133: 1129: 1125: 1121: 1117: 1103: 1100: 1089: 1086: 1083: 1080: 1079: 1075: 1072: 1069: 1065: 1062: 1061: 1057: 1054: 1051: 1048: 1047: 1043: 1040: 1038: 1034: 1031: 1030: 1026: 1023: 1020: 1017: 1016: 1008: 1005: 1003: 999: 995: 991: 988: 987: 979: 976: 973: 970: 969: 961: 958: 955: 952: 951: 941: 938: 935: 932: 931: 925: 922: 919: 916: 913: 910: 909: 905: 902: 899: 896: 893: 892: 888: 885: 882: 879: 878: 875: 869: 862: 855: 848: 847: 846: 835: 833:transistors). 831: 828: 824: 823: 822: 808: 805: 801: 797: 794: 791: 790: 786: 783: 780: 779: 776: 774: 770: 766: 763: 760: 759: 756: 754: 751: 748: 747: 744: 742: 739: 736: 735: 732:BU508, BUZ11 731: 724: 720: 717: 716: 712: 709: 705: 701: 698: 697: 693: 686: 682: 679: 678: 674: 671: 667: 663: 659: 655: 652: 651: 647: 644: 640: 637: 636: 632: 629: 625: 621: 618: 617: 613: 611: 610:Opto-isolator 608: 605: 604: 601: 599: 595: 592: 589: 588: 584: 577: 574: 573: 570: 567: 564: 561: 560: 556: 554: 553:Hybrid device 551: 548: 547: 543: 536: 532: 528: 524: 521: 520: 516: 514: 511: 508: 507: 503: 496: 493: 492: 488: 481: 478: 477: 473: 471: 470:Varicap diode 468: 465: 464: 461:AA119, BA121 460: 457: 454: 453: 449: 446: 443: 442: 434: 419: 415: 411: 407: 403: 399: 392: 388: 384: 383: 370: 368: 364: 363: 361: 358: 355: 352: 349: 346: 344: 343:photoresistor 340: 336: 333: 330: 327: 324: 321: 318: 315: 310: 308: 304: 300: 296: 292: 291: 289: 286: 284: 280: 276: 272: 269: 266: 263: 260: 257: 254: 251: 248: 247: 246: 245: 234: 230: 227: 224: 220: 219: 217: 214: 210: 209: 203: 201: 193: 190: 187: 186: 185: 177: 175: 172: 170: 167: 166: 162: 159: 157: 154: 153: 149: 146: 144: 141: 140: 136: 133: 130: 129: 126: 125:transistors: 122: 120: 116: 108: 105: 102: 100: 96: 94: 90: 88: 84: 81: 77: 76: 75: 67: 63: 61: 57: 53: 48: 46: 42: 38: 34: 30: 26: 22: 18: 2492:Pro Electron 2472:. Retrieved 2467: 2455: 2444:. Retrieved 2440:Sperimentare 2439: 2430: 2411: 2407: 2401: 2378: 2371: 2360:. Retrieved 2353:the original 2344: 2337: 2326:. Retrieved 2320: 2298:. Retrieved 2292: 2268:. Retrieved 2264:Sperimentare 2263: 2232:. Retrieved 2223: 2189:. Retrieved 2176: 2165:. Retrieved 2156: 2130:. Retrieved 2121: 2116: 2110: 2093: 2089: 2083: 2072: 2061: 2050:. Retrieved 2043:the original 1933: 1929:74S00 series 1913:74H00 series 1827:) FK=ECL by 1744: 1731: 1712: 1692: 1673: 1654: 1635:Description 1616: 1606: 1591: 1569: 1558: 1510: 1501: 1485: 1474: 1454: 1443: 1395: 1377: 1361: 1345: 1315: 1297: 1271: 1247: 1128:East Germany 1119: 1113: 1101: 1098: 948:) selection 880:Prefix class 873: 844: 819: 433:(see above) 432: 413: 409: 390: 366: 359: 353: 347: 334: 328: 322: 316: 306: 287: 267: 258: 249: 222: 197: 183: 123: 117:), i.e. the 112: 73: 64: 59: 49: 20: 17:Pro Electron 16: 15: 1867:FS=SECL by 1841:7400 series 1825:7400 series 1427:3rd letter 1290:F, G, H, I 1279:1st letter 1215:2nd letter 525:Low-power, 402:Noval (B9A) 393:letters is: 93:Zener diode 2507:Categories 2474:2022-05-05 2446:2022-05-05 2421:5934551299 2362:2022-05-04 2328:2022-08-23 2300:2022-05-05 2270:2022-10-19 2234:2022-05-04 2191:2022-11-21 2167:2022-05-04 2132:2017-12-02 2052:2022-05-04 2009:References 1938:(like the 1869:Telefunken 1857:Telefunken 1849:Telefunken 1421:3rd digit 1248:Examples: 1155:Germanium 1087:BZY88-C5V6 920:transistor 704:thyristors 658:thyristors 624:photodiode 444:2nd letter 362:may be... 290:may be... 80:transistor 2102:0033-7900 1936:NAND gate 1141:Material 1126:(KME) in 1055:BT138/800 915:Germanium 898:Germanium 796:Avalanche 253:Germanium 212:instance. 27:(such as 1946:See also 1865:SGS-ATES 1730:PCF8574A 1703:Plastic 1672:SAA7146A 1638:Example 1632:Package 1430:Example 1424:Example 1285:Example 1169:Silicon 1041:BSV52LT1 992:Silicon 959:BC337-25 903:AC127/01 769:varactor 450:Example 295:band gap 52:Brussels 1925:Mullard 1917:Mullard 1909:Mullard 1901:Philips 1893:Siemens 1885:Siemens 1877:Siemens 1837:Siemens 1829:Philips 1821:Mullard 1817:Philips 1805:Philips 1797:Mullard 1793:Philips 1785:Mullard 1781:Philips 1774:dynamic 1770:Mullard 1766:Philips 1711:PCF8574 1691:PEB2086 1653:PMB2800 1318:AB2650A 1116:Romania 1013:rating 939:BC183LB 886:Example 741:Antenna 531:bipolar 489:BC546C 474:BB105G 410:usually 262:Silicon 223:varicap 156:Lockfit 131:Package 56:Belgium 2418:  2389:  2124:] 2100:  1726:(SOP) 1707:(DIP) 1668:(QFP) 1649:(BGA) 1619:4011BP 1513:4012B 1410:Range 1398:AA180 1380:EA1002 1364:AA1099 1348:MB2205 1282:Usage 1250:GD241C 1073:BU508D 1037:MOSFET 1024:BLY49A 1006:BF493S 977:BDT60B 923:AFY40R 889:Notes 809:BZY91 787:BY228 723:MOSFET 713:BT138 708:TRIACs 694:BS170 685:MOSFET 675:BR100 666:triacs 648:CQY99 633:BPW34 614:CNY17 596:-type 585:BLW34 568:/diode 544:BF245 517:AE100 504:BD139 225:diodes 178:BC55x 163:BC15x 150:BC17x 2464:(PDF) 2410:[ 2383:(PDF) 2356:(PDF) 2349:(PDF) 2228:(PDF) 2185:(PDF) 2161:(PDF) 2126:(PDF) 2120:[ 2046:(PDF) 2039:(PDF) 1952:JEDEC 1843:) FN= 1811:) FJ= 1605:FJH10 1594:2335 1572:1009P 1557:FLH18 1500:TAA76 1488:2115F 1473:FLH24 1457:5140A 1442:TCA22 1300:LH101 1262:LQ100 1258:KD503 1254:MB111 883:Usage 806:diode 804:Zener 662:diacs 447:Usage 418:Noval 398:ECC81 341:in a 233:tubes 174:BC54x 169:TO-92 160:BC14x 147:BC10x 143:TO-18 115:tubes 2416:ISBN 2387:ISBN 2098:ISSN 1940:7400 1889:PMOS 1789:PMOS 1777:PMOS 1756:, R= 1752:, Q= 1330:and 1130:and 1122:54. 826:"8", 670:UJTs 404:, 9= 385:See 283:LEDs 137:PNP 43:and 21:EECA 1923:by 1921:TTL 1907:by 1905:TTL 1903:GJ= 1899:by 1897:ECL 1891:by 1887:GD= 1883:by 1881:HTL 1879:FZ= 1875:by 1873:ECL 1871:FY= 1863:by 1861:DTL 1859:FQ= 1855:by 1853:HTL 1851:FP= 1847:by 1845:ECL 1835:by 1833:TTL 1831:FL= 1815:by 1813:TTL 1803:by 1801:TTL 1799:FH= 1791:by 1787:FE= 1779:by 1772:FD= 1764:by 1762:DTL 1758:ROM 1754:RAM 1068:CRT 1011:CEO 1002:FET 1000:or 998:BJT 982:CBO 800:TVS 725:, R 687:, R 643:LED 537:, R 535:FET 533:or 301:in 281:in 271:III 134:NPN 47:). 19:or 2509:: 2466:. 2438:. 2309:^ 2279:^ 2262:. 2243:^ 2200:^ 2141:^ 2094:22 2017:^ 1931:) 1819:/ 1795:/ 1783:/ 1768:/ 1720:T 1700:P 1681:N 1662:H 1643:E 1615:HE 1611:F 1602:6 1590:TB 1587:E 1584:— 1581:— 1568:SA 1564:D 1553:5 1545:— 1542:— 1537:4 1529:— 1526:— 1521:3 1509:HC 1506:C 1497:2 1484:PS 1480:B 1469:1 1464:0− 1453:TD 1449:A 1438:0 1386:U 1370:T 1354:S 1338:P 1324:N 1306:M 1239:W 1231:M 1223:B 1206:— 1203:M 1200:C 1192:L 1189:V 1186:C 1178:K 1175:S 1172:B 1164:G 1161:G 1158:A 1081:BZ 1063:BU 1049:BT 1032:BS 1018:BL 994:RF 989:BF 984:) 971:BD 964:FE 953:BC 946:FE 933:BC 918:RF 911:AF 894:AC 858:FE 851:FE 802:, 798:, 771:, 767:: 727:th 706:, 689:th 668:, 664:, 660:, 626:, 580:th 539:th 527:RF 499:th 484:th 367:or 307:or 235:). 54:, 39:, 35:, 31:, 2477:. 2449:. 2424:. 2395:. 2365:. 2331:. 2303:. 2273:. 2237:. 2194:. 2170:. 2135:. 2104:. 2055:. 1927:( 1911:( 1839:( 1823:( 1807:( 1732:T 1713:P 1693:N 1674:H 1655:E 1617:F 1607:6 1592:E 1570:D 1559:5 1511:C 1502:2 1486:B 1475:1 1455:A 1444:0 1396:U 1378:T 1362:S 1346:P 1316:M 1298:F 1120:P 1092:z 865:z 792:Z 781:Y 761:X 749:W 737:V 718:U 699:T 680:S 653:R 645:) 638:Q 630:) 619:P 606:N 590:M 575:L 562:H 549:G 522:F 509:E 494:D 479:C 466:B 455:A 360:U 354:T 348:S 335:R 329:P 323:F 317:E 288:D 275:V 273:- 268:C 259:B 250:A

Index

active components
semiconductors
liquid crystal displays
sensor devices
electronic tubes
cathode ray tubes
Brussels
Belgium
transistor
Silicon rectifier
Zener diode
light emitting diode
tubes
Mullard–Philips tube designation
TO-18
Lockfit
TO-92
BC54x
integrated circuits
tubes
Germanium
Silicon
III
V
gallium arsenide
LEDs
band gap
indium antimonide
infrared detectors
cadmium sulfide

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