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is effectively 100% but is a function of the thickness particularly for near bandedge photons. Like all narrow bandgap materials InSb detectors require periodic recalibrations, increasing the complexity of the imaging system. This added complexity is worthwhile where extreme sensitivity is required,
953:
in 1952, although they were not very pure by today's semiconductor standards. Welker was interested in systematically studying the semiconducting properties of the III-V compounds. He noted how InSb appeared to have a small direct band gap and a very high electron mobility. InSb crystals have been
1128:). Some models suggest that terahertz frequencies are achievable with this material. Indium antimonide semiconductor devices are also capable of operating with voltages under 0.5 V, reducing their power requirements.
737:
1077:
e.g. in long-range military thermal imaging systems. InSb detectors also require cooling, as they have to operate at cryogenic temperatures (typically 80 K). Large arrays (up to 2048×2048
704:
949:
The intermetallic compound was first reported by Liu and
Peretti in 1951, who gave its homogeneity range, structure type, and lattice constant. Polycrystalline ingots of InSb were prepared by
1531:
Alexander-Webber, J. A.; Baker, A. M. R.; Buckle, P. D.; Ashley, T.; Nicholas, R. J. (2012-07-05). "High-current breakdown of the quantum Hall effect and electron heating in InSb/AlInSb".
988:
InSb has the appearance of dark-grey silvery metal pieces or powder with vitreous lustre. When subjected to temperatures over 500 °C, it melts and decomposes, liberating antimony and
1375:
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851:
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Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a
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Avery, D G; Goodwin, D W; Lawson, W D; Moss, T S (1954). "Optical and Photo-Electrical
Properties of Indium Antimonide".
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opened a laboratory at the university to further this research, however Delft later retracted the paper.
322:
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1477:
Avery, D G; Goodwin, D W; Rennie, Miss A E (1957). "New infra-red detectors using indium antimonide".
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operating at frequencies up to 85 GHz were constructed from indium antimonide in the late 1990s;
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1735:
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A layer of indium antimonide sandwiched between layers of aluminium indium antimonide can act as a
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930:. Indium antimonide detectors are sensitive to infrared wavelengths between 1 and 5 μm.
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1376:"Microsoft's new quantum computing lab in Delft opens its doors to a world of possibilities"
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Semiconductors and the
Information Revolution: Magic Crystals that Made IT Happen
1204:(in terms of dynamic switching). This is due to the high carrier mobility of InSb
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1057:(up to 0.7 μm at 300 K) of any known semiconductor, except for
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Except where otherwise noted, data are given for materials in their
21:
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467:
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Liu, T.S.; Peretti, E.A. (1951). "The
Lattice Parameter of InSb".
181:
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1530:
1442:
Rode, D. L. (1971). "Electron
Transport in InSb, InAs, and InP".
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operating at over 200 GHz have been reported more recently (
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InSb can be grown by solidifying a melt from the liquid state (
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InSb is a narrow direct band gap semiconductor with an energy
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grown by slow cooling from liquid melt at least since 1954.
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1338:
1108:. This approach is studied in order to construct very fast
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1964:
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1476:
1568:"'Quantum well' transistor promises lean computing"
46:. Unsourced material may be challenged and removed.
757:
2493:
1520:(PhD). Cambridge University. uk.bl.ethos.388828.
761:
263:
1045:InSb possesses the largest ambient-temperature
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1539:(4). American Physical Society (APS): 045404.
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1104:has recently been shown to exhibit a robust
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965:showed potential application in creating
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106:Learn how and when to remove this message
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1626:National Compound Semiconductor Roadmap
1511:
1019:InSb infrared detector manufactured by
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1430:Properties of Indium Antimonide (InSb)
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462:524 °C (975 °F; 797 K)
214:
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1597:CRC Handbook of Chemistry and Physics
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370:Key: WPYVAWXEWQSOGY-UHFFFAOYSA-N
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44:adding citations to reliable sources
15:
1341:Proceedings of the Physical Society
254:
13:
1318:. Academic Press. pp. 138–9.
1263:
1224:
14:
2538:
1619:
1479:Journal of Scientific Instruments
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1049:of 78000 cm/(V⋅s), electron
1594:Haynes, William M., ed. (2016).
1587:
1518:High Resolution Infrared Imaging
1207:In some of the detectors of the
1089:are materials with similar use.
1039:and 0.23 eV at 80 K.
836:
727:
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415:
133:
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20:
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1505:
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961:claimed that indium antimonide
832:(at 25 °C , 100 kPa).
31:needs additional citations for
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1367:
1332:
1307:
1288:
1251:
1239:
959:Delft University of Technology
412:
1:
2327:Organoantimony(III) compounds
1646:University of Texas at Dallas
1374:Dedezade, Esat (2019-02-21).
1218:
438:Dark grey, metallic crystals
2527:Zincblende crystal structure
1380:Microsoft News Centre Europe
1156:. It can also be grown from
957:In 2018, a research team at
7:
2446:Organoantimony(V) compounds
1965:Organoindium(III) compounds
1593:
1499:10.1088/0950-7671/34/10/305
1361:10.1088/0370-1301/67/10/304
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10:
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1635:Material safety data sheet
1566:Will Knight (2005-02-10).
1553:10.1103/physrevb.86.045404
1400:(1st ed.). New York:
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2517:Infrared sensor materials
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1729:Organoindium(I) compounds
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937:source as it is a strong
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1630:Office of Naval Research
1118:field-effect transistors
774:Precautionary statements
504:mW⋅K⋅cm (at 27 °C)
1464:10.1103/PhysRevB.3.3287
1213:Spitzer Space Telescope
490:mC⋅s⋅g (at 27 °C)
1512:Beckett, M.G. (1995).
1154:molecular beam epitaxy
1024:
1209:Infrared Array Camera
1018:
1011:Electronic properties
1003:with a 0.648 nm
892:(Sb). It is a narrow-
592:Coordination geometry
584: = 0.648 nm
2512:III-V semiconductors
1314:Orton, J.W. (2009).
1182:photoelectromagnetic
1146:liquid phase epitaxy
496:Thermal conductivity
40:improve this article
1545:2012PhRvB..86d5404A
1491:1957JScI...34..394A
1456:1971PhRvB...3.3287R
1353:1954PPSB...67..761A
1168:Device applications
1138:Czochralski process
1114:Bipolar transistors
1106:quantum Hall effect
984:Physical properties
935:terahertz radiation
877:) is a crystalline
430: g·mol
120:
55:"Indium antimonide"
2077:Antimony compounds
1640:2016-03-03 at the
1271:"Indium Antimonde"
1074:quantum efficiency
1064:Indium antimonide
1025:
967:Majorana zero mode
928:infrared astronomy
909:infrared detectors
899:material from the
859:Infobox references
799:Related compounds
119:Indium antimonide
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1600:(97th ed.).
1533:Physical Review B
1450:(10): 3287–3299.
1444:Physical Review B
1411:978-0-385-54836-6
1398:Quantum Supremacy
1275:American Elements
1192:magnetoresistance
1081:) are available.
1047:electron mobility
997:crystal structure
974:quantum computing
871:Indium antimonide
867:Chemical compound
865:
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787:Safety data sheet
752:Hazard statements
679:Gibbs free energy
536:Crystal structure
482:Electron mobility
323:CompTox Dashboard
183:Interactive image
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1005:lattice constant
926:systems, and in
924:missile guidance
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817:Indium phosphide
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1404:. p. 96.
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1158:organometallic
1133:
1132:Growth methods
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1068:detectors are
1051:drift velocity
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990:antimony oxide
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970:quasiparticles
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907:group used in
881:made from the
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1748:Indium(I,III)
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1611:9781498754293
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1588:Cited sources
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1572:New Scientist
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1174:Thermal image
1172:
1171:
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1160:compounds by
1159:
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1038:
1034:
1031:of 0.17
1030:
1023:in the 1960s.
1022:
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991:
981:
979:
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694:−25.5 kJ·mol
693:
688:
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676:
675:
672:−30.5 kJ·mol
671:
663:
655:
649:
648:
645:86.2 J·K·mol
644:
636:
631:
625:
624:
621:49.5 J·K·mol
620:
615:
610:
609:Heat capacity
606:
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96:November 2023
88:
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57: –
56:
52:
51:Find sources:
45:
41:
35:
34:
29:This article
27:
23:
18:
17:
2132:
1792:
1755:
1595:
1575:. Retrieved
1571:
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1532:
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1437:
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1394:Kaku, Michio
1388:
1379:
1369:
1344:
1343:. Series B.
1340:
1334:
1315:
1309:
1300:
1296:
1290:
1278:. Retrieved
1265:
1253:
1248:, pp. 12.156
1241:
1135:
1096:. In such a
1094:quantum well
1091:
1070:photovoltaic
1063:
1041:
1035:at 300
1026:
994:
987:
956:
948:
939:photo-Dember
932:
911:, including
874:
870:
869:
793:External SDS
743:
705:
686:
661:
634:
613:
597:Tetrahedral
581:
566:
562:
555:
514:
276:RTECS number
142:Identifiers
102:
93:
83:
76:
69:
62:
50:
38:Please help
33:verification
30:
2502:Antimonides
2085:Antimonides
1771:Indium(III)
1514:"3. Camera"
1485:(10): 394.
1347:(10): 761.
1202:transistors
1196:Hall effect
1178:photodiodes
1142:epitaxially
1110:transistors
972:for use in
738:Signal word
550:Space group
435:Appearance
400:Properties
221:100.013.812
2496:Categories
1577:2020-01-11
1432:. ioffe.ru
1297:Trans AIME
1260:, pp. 5.22
1219:References
1066:photodiode
1001:zincblende
717:Pictograms
542:Zincblende
529:Structure
423:Molar mass
301:CVZ50C0S9O
194:ChemSpider
170:3D model (
149:CAS Number
66:newspapers
2371:Sb(III,V)
1689:Indium(I)
1602:CRC Press
1402:Doubleday
1236:, p. 4.66
1184:detectors
978:Microsoft
963:nanowires
941:emitter.
919:systems,
915:cameras,
888:(In) and
708:labelling
654:formation
628:Std molar
312:UN number
283:NL1105000
242:215-192-3
234:EC Number
159:1312-41-0
1638:Archived
1396:(2023).
1280:June 20,
1029:band gap
992:vapors.
890:antimony
883:elements
879:compound
699:Hazards
468:Band gap
2162:Sb(III)
1628:at the
1541:Bibcode
1487:Bibcode
1452:Bibcode
1349:Bibcode
1211:on the
1194:or the
1126:QinetiQ
1043:Undoped
1021:Mullard
945:History
852:what is
850: (
744:Warning
682:(Δ
630:entropy
444:Density
428:236.578
265:3468413
252:PubChem
203:2709929
80:scholar
1859:In(ClO
1838:In(OH)
1608:
1408:
1322:
1303:: 791.
1258:Haynes
1246:Haynes
1234:Haynes
1140:), or
1102:AlInSb
1083:HgCdTe
1079:pixels
1053:, and
886:indium
847:verify
844:
807:anions
805:Other
789:(SDS)
502:
488:
474:
450:
448:5.7747
384:SMILES
82:
75:
68:
61:
53:
2454:Sb(CH
2394:Sb(V)
2335:Sb(CH
2025:In(CH
1972:In(CH
1936:In(NO
1200:Fast
1162:MOVPE
1122:Intel
1100:InSb/
452:g⋅cm
359:InChI
316:1549
172:JSmol
87:JSTOR
73:books
2466:Sb(C
2401:SbCl
2347:Sb(C
2221:(OH)
2197:SbCl
2177:Sb(C
2169:SbBr
2153:ZnSb
2143:SmSb
2138:PrSb
2133:InSb
2125:HoSb
2120:HoSb
2115:GaSb
2110:DySb
2093:AlSb
2008:In(C
1986:In(C
1976:COO)
1814:InBr
1806:InCl
1793:InSb
1788:InAs
1762:InSe
1701:InCl
1696:InBr
1606:ISBN
1406:ISBN
1320:ISBN
1282:2019
1087:PtSi
1085:and
995:The
917:FLIR
875:InSb
780:P273
766:H411
762:H332
758:H302
472:0.17
292:UNII
59:news
2409:SbF
2286:(SO
2253:SbN
2245:SbI
2237:SbH
2225:(NO
2205:SbF
2148:YSb
2100:1-x
1954:1−x
1923:(SO
1830:InH
1822:InI
1798:InF
1783:InP
1778:InN
1706:InI
1644:at
1549:doi
1495:doi
1460:doi
1357:doi
1301:191
1180:or
1152:or
1144:by
999:is
901:III
894:gap
706:GHS
665:298
638:298
500:180
486:7.7
476:eV
328:EPA
255:CID
42:by
2498::
2429:Sb
2417:Sb
2378:Sb
2314:Te
2310:Sb
2302:Se
2298:Sb
2282:Sb
2270:Sb
2258:Sb
2213:Sb
2102:Sb
2098:Bi
1952:Ga
1948:In
1919:In
1910:Te
1906:In
1898:Se
1894:In
1882:In
1846:In
1756:In
1716:SO
1712:In
1604:.
1570:.
1547:.
1537:86
1535:.
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1481:.
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1355:.
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1299:.
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1226:^
1164:.
1148:,
1112:.
1061:.
1033:eV
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567:3m
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416:Sb
413:In
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2014:5
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1956:N
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