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The difference between the
Bridgman technique and Stockbarger technique is subtle: While both methods utilize a temperature gradient and a moving crucible, the Bridgman technique utilizes the relatively uncontrolled gradient produced at the exit of the furnace; the Stockbarger technique introduces a
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is located. A single crystal of the same crystallographic orientation as the seed material is grown on the seed and is progressively formed along the length of the container. The process can be carried out in a horizontal or vertical orientation, and usually involves a rotating crucible/ampoule to
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baffle, or shelf, separating two coupled furnaces with temperatures above and below the freezing point. Stockbarger's modification of the
Bridgman technique allows for better control over the temperature gradient at the melt/crystal interface.
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When seed crystals are not employed as described above, polycrystalline ingots can be produced from a feedstock consisting of rods, chunks, or any irregularly shaped pieces once they are melted and allowed to re-solidify. The resultant
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is more difficult. The process can reliably produce single-crystal ingots, but does not necessarily result in uniform properties through the crystal.
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Montgomery, Matthew; Blockburger, Clark (2017). Zelinski, Brian J. (ed.). "18 x 36 x 1.5 inch sapphire panels for visible and infrared windows".
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Bridgman, Percy W. (1925). "Certain
Physical Properties of Single Crystals of Tungsten, Antimony, Bismuth, Tellurium, Cadmium, Zinc, and Tin".
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The methods involve heating polycrystalline material above its melting point and slowly cooling it from one end of its container, where a
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of the ingots so obtained are characteristic of directionally solidified metals and alloys with their aligned grains.
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crystals 45 cm wide and over 1 meter long. However, the quality of the crystals grown by HDSM differ from the
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297:(1895–1952). The method includes two similar but distinct techniques primarily used for growing
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Stockbarger, Donald C. (1936). "The
Production of Large Single Crystals of Lithium Fluoride".
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Arzakantsyan, M.; Ananyan, N.; Gevorgyan, V.; Chanteloup, J.-C. (2012).
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Hans J. Scheel; Peter Capper; Peter
Rudolph (25 October 2010).
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The
Bridgman method is a popular way of producing certain
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Crystal Growth
Technology: Semiconductors and Dielectrics
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Proceedings of the
American Academy of Arts and Sciences
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may be too technical for most readers to understand
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380:with short sidewalls rather than an enclosed
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434:. John Wiley & Sons. pp. 177–178.
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62:Learn how and when to remove this message
46:, without removing the technical details.
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360:A variant of the technique known as the
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44:make it understandable to non-experts
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368:) developed by Khachik Bagdasarov (
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627:. You can help Knowledge by
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183:Czochralski method
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160:Methods and technology
295:Donald C. Stockbarger
679:Semiconductor growth
674:Industrial processes
554:10.1364/OME.2.001219
578:2017SPIE10179E..0NM
545:2012OMExp...2.1219A
504:1936RScI....7..133S
152:Single crystal
132:Crystal growth
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406:Float-zone silicon
394:Czochralski method
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378:molybdenum
111:Nucleation
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400:See also
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309:Overview
119:Concepts
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382:ampoule
370:Russian
188:Epitaxy
101:Crystal
38:Please
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