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of the wires leading to the device imposes a higher limit. This makes transient-voltage-suppression diodes useful for protection against very fast and often damaging voltage transients. These fast over-voltage transients are present on all distribution networks and can be caused by either internal or
370:
A bidirectional transient-voltage-suppression diode can be represented by two mutually opposing avalanche diodes in series with one another and connected in parallel with the circuit to be protected. While this representation is schematically accurate, physically the devices are now manufactured as a
397:
will fail if they are subjected to voltages or conditions beyond those that the particular product was designed to accommodate. There are three key modes in which the TVS will fail: short, open, and degraded device.
477:
only affects the time to cool down afterwards. Thus, a high-energy TVS must be physically large. If this capacity is too small, the over voltage will possibly destroy the device and leave the circuit unprotected.
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device, suppressing all overvoltages above its breakdown voltage. It automatically resets when the overvoltage goes away, but absorbs much more of the transient energy internally than a similarly rated
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1707:
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A transient-voltage-suppression diode can respond to over-voltages faster than other common over-voltage protection components such as
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Amount of energy it can absorb: Because the transients are so brief, all of the energy is initially stored internally as heat; a
1096:
359:
A transient-voltage-suppression diode may be either unidirectional or bidirectional. A unidirectional device operates as a
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470:: Because the actual over voltage switching is so fast, the package inductance is the limiting factor for response speed.
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432:: the amount of current conducted when voltage applied is below the maximum reverse standoff voltage.
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450:: the voltage at which the device will conduct its fully rated current (hundreds to thousands of
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464:, which can distort and corrupt high-speed signals. Lower capacitance is generally preferred.
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The device operates by shunting excess current when the induced voltage exceeds the
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444:: the voltage at which some specified and significant conduction occurs.
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Transient
Protection Solutions: Transil™ diode versus Varistor
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1580:
1339:
1112:
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767:
762:
367:, but is made and tested to handle very large peak currents.
401:
TVS diodes are sometimes referred to as transorbs, from the
1612:
995:
941:
842:
795:
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438:: the voltage below which no significant conduction occurs.
416:
Combined TVS and rail-to-rail diode (unidirectional)
391:
external events, such as lightning or motor arcing.
1694:
595:; ON Semiconductor; 127 pages; 2005; HBD854/D.
518:"Evaluating TVS Protection Circuits with SPICE"
658:
620:Transient Suppression Devices and Principles
382:. The actual clamping occurs in roughly one
665:
651:
593:TVS/Zener Theory and Design Considerations
549:TVS/Zener Theory and Design Considerations
531:(1). Primedia: 44–49. 2006. Archived from
87:
672:
561:"Failure Modes and Fusing of TVS Devices"
460:: The nonconducting diode behaves like a
69:Learn how and when to remove this message
411:
363:in the forward direction like any other
350:
32:This article includes a list of general
1695:
93:STMicroelectronics Transil TVS devices
646:
1097:Three-dimensional integrated circuit
622:, Littelfuse Application Note AN9768
18:
878:Programmable unijunction transistor
420:
13:
779:Multi-gate field-effect transistor
614:, Semtech Application Note SI96-01
586:
38:it lacks sufficient corresponding
14:
1724:
1708:Electric power systems components
757:Insulated-gate bipolar transistor
604:
425:A TVS diode is characterized by:
386:, but in a practical circuit the
1001:Heterostructure barrier varactor
728:Chemical field-effect transistor
436:Maximum reverse standoff voltage
131:
23:
1049:Mixed-signal integrated circuit
553:
542:
510:
266:Bidirectional also available.
180:
1:
628:Transil™ / Trisil™ Comparison
503:
395:Transient voltage suppressors
204:Comparison of TVS Components
143:transient-voltage-suppression
1080:Silicon controlled rectifier
942:Organic light-emitting diode
832:Diffused junction transistor
638:, ST application note AN1826
568:Vishay General Semiconductor
525:Power Electronics Technology
177:induced on connected wires.
7:
884:Static induction transistor
821:Bipolar junction transistor
773:MOS field-effect transistor
745:Fin field-effect transistor
630:, ST application note AN574
481:
10:
1729:
1091:Static induction thyristor
316:Fusing required. Degrades.
1628:
1528:
1495:
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1364:
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1260:(Hexode, Heptode, Octode)
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1012:Hybrid integrated circuit
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855:Light-emitting transistor
809:
691:
680:
203:
130:
123:
108:
98:
86:
1307:Backward-wave oscillator
1017:Light emitting capacitor
873:Point-contact transistor
843:Junction Gate FET (JFET)
318:Voltage level too high.
1318:Crossed-field amplifier
837:Field-effect transistor
291:Temperature sensitive.
53:more precise citations.
1487:Voltage-regulator tube
1054:MOS integrated circuit
919:Constant-current diode
895:Unijunction transistor
417:
356:
345:Can short power line.
264:Low power dissipation.
1556:Electrolytic detector
1329:Inductive output tube
1145:Low-dropout regulator
1060:Organic semiconductor
991:Printed circuit board
827:Darlington transistor
674:Electronic components
458:Parasitic capacitance
415:
354:
1374:Beam deflection tube
1043:Metal oxide varistor
936:Light-emitting diode
790:Thin-film transistor
751:Floating-gate MOSFET
468:Parasitic inductance
343:Only 50−2500 surges.
167:electronic component
16:Electronic component
1350:Traveling-wave tube
1150:Switching regulator
986:Printed electronics
963:Step recovery diode
740:Depletion-load NMOS
612:What are TVS diodes
598:(Free PDF download)
380:gas discharge tubes
189:potential. It is a
187:avalanche breakdown
118:avalanche breakdown
83:
1655:Crystal oscillator
1515:Variable capacitor
1190:Switched capacitor
1132:Voltage regulators
1006:Integrated circuit
890:Tetrode transistor
868:Pentode transistor
861:Organic LET (OLET)
848:Organic FET (OFET)
418:
371:single component.
357:
355:TVS diode as array
324:Gas discharge tube
81:
1713:Voltage stability
1690:
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1650:Ceramic resonator
1462:Mercury-arc valve
1414:Video camera tube
1366:Cathode-ray tubes
1126:
1125:
734:Complementary MOS
600:
442:Breakdown voltage
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289:High capacitance.
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125:Electronic symbol
110:Working principle
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1544:electrical power
1429:Gas-filled tubes
1313:Cavity magnetron
1140:Linear regulator
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570:. 13 August 2007
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448:Clamping voltage
421:Characterization
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169:used to protect
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49:this article by
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1269:Photomultiplier
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1070:Quantum circuit
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914:Avalanche diode
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587:Further reading
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488:Surge protector
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430:Leakage current
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365:avalanche diode
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241:considerations
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45:Please help to
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1399:Selectron tube
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538:on 2012-05-03.
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59:December 2019
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1437:Cold cathode
1404:Storage tube
1294:Vacuum tubes
1243:Neutron tube
1218:Beam tetrode
1200:Vacuum tubes
785:Power MOSFET
635:
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592:
572:. Retrieved
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533:the original
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37:
1603:Transformer
1345:Sutton tube
1185:Charge pump
1038:Memory cell
968:Zener diode
930:Laser diode
813:transistors
695:transistors
498:Zener diode
231:performance
226:dissipation
181:Description
171:electronics
51:introducing
1697:Categories
1675:reed relay
1665:Parametron
1598:Thermistor
1576:resettable
1535:Connector
1496:Adjustable
1472:Nixie tube
1442:Crossatron
1409:Trochotron
1384:Iconoscope
1379:Charactron
1356:X-ray tube
1228:Compactron
1208:Acorn tube
1165:Buck–boost
1086:Solaristor
948:Photodiode
925:Gunn diode
921:(CLD, CRD)
703:Transistor
504:References
405:trademark
388:inductance
384:picosecond
304:> 300 V
219:Protection
214:Protection
34:references
1638:Capacitor
1482:Trigatron
1477:Thyratron
1467:Neon lamp
1394:Monoscope
1274:Phototube
1258:Pentagrid
1223:Barretter
1108:Trancitor
1103:Thyristor
1028:Memristor
953:PIN diode
730:(ChemFET)
475:heat sink
462:capacitor
407:TransZorb
376:varistors
361:rectifier
328:> 1 μs
274:< 3 ns
209:Component
163:thyrector
82:TVS diode
1660:Inductor
1630:Reactive
1608:Varistor
1588:Resistor
1566:Antifuse
1452:Ignitron
1447:Dekatron
1335:Klystron
1324:Gyrotron
1253:Nuvistor
1170:Split-pi
1056:(MOS IC)
1023:Memistor
781:(MuGFET)
775:(MOSFET)
747:(FinFET)
482:See also
331:60−100 V
313:Degrades
301:10−20 ns
277:30−400 V
234:Expected
229:Reliable
198:device.
191:clamping
165:, is an
159:transorb
1561:Ferrite
1529:Passive
1520:Varicap
1508:digital
1457:Krytron
1279:Tetrode
1264:Pentode
1118:Varicap
1099:(3D IC)
1075:RF CMOS
979:devices
753:(FGMOS)
684:devices
452:amperes
340:Limited
252:3−400 V
221:voltage
196:crowbar
155:transil
153:, also
112:
103:Passive
47:improve
1703:Diodes
1593:Switch
1284:Triode
1248:Nonode
1213:Audion
1093:(SITh)
977:Other
944:(OLED)
906:Diodes
857:(LET)
839:(FET)
811:Other
759:(IGBT)
736:(CMOS)
723:BioFET
718:BiCMOS
574:8 June
493:Trisil
403:Vishay
36:, but
1670:Relay
1643:types
1581:eFUSE
1352:(TWT)
1340:Maser
1331:(IOT)
1320:(CFA)
1309:(BWO)
1233:Diode
1180:SEPIC
1160:Boost
1113:TRIAC
1082:(SCR)
1045:(MOV)
1019:(LEC)
938:(LED)
897:(UJT)
886:(SIT)
880:(PUT)
823:(BJT)
792:(TFT)
768:LDMOS
763:ISFET
564:(PDF)
536:(PDF)
521:(PDF)
249:50 ps
239:Other
224:Power
173:from
151:diode
1613:Wire
1571:Fuse
1155:Buck
1008:(IC)
996:DIAC
932:(LD)
801:UMOS
796:VMOS
713:PMOS
708:NMOS
693:MOS
576:2012
334:None
307:None
286:Long
280:None
261:Long
236:life
216:time
211:type
99:Type
1175:Ćuk
378:or
297:MOV
283:Yes
258:Yes
255:Low
161:or
147:TVS
1699::
1549:RF
1298:RF
566:.
529:32
527:.
523:.
454:).
409:.
337:No
310:No
157:,
149:)
141:A
1300:)
1296:(
666:e
659:t
652:v
578:.
145:(
72:)
66:(
61:)
57:(
43:.
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