833:), I = 5.41 mAmps (54 times the value when V was 0.6V)! If a small diode, it will surely burn out with this current ! We assumed that the applied voltage appears across the junction entirely ignoring the voltage drops across the bulk of the p and n regions. It is reasonable to assume that, yet, as the applied voltage approaches Vo = 0.703V, and the current increases, some voltage will begin to drop across the bulk p and n regions (the electric field in these regions increases) and across the resistance of the ohmic contacts to uphold the current conservation law while, the part of the applied voltage that lowers the barrier potential Vo, makes the voltage across the junction close to zero but, not equal to zero and a vanishingly thin depletion region remains that demarcates the p and the n regions with holes (from the p-side) and electrons (from the n-side) recombining all around. Only a small part of the applied voltage lowers the barrier potential V
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decrease before electron density increases, or at least, hole density would decrease faster than electron density increases. In fact I suspect that most electrons coming to the P side from the N sides would recombine with one of the holes they find on their way. Same goes for holes crossing the junctions from the P side to the N side, I'd expect most of them to recombine with an electron from the N side. Thus, the first thing you'd see when you get closer to the junction from either side is a decrease of the majority carrier, not an increase of the minority carrier.
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fact, the quantum excitation called an "electron" is not really the same as a free electron at all, because it also has a different mass from a free electron. It is another kind of quantum excitation that isn't the same as a single free particle, but nevertheless it's perfectly "real" in that it accurately describes the low-energy quantum states of the semiconductor system. So if you want to say "holes aren't real", then you have to say that these kinds of "electrons" in a semiconductor aren't real either. If holes aren't real, then what the heck is a
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1434:, leaving behind charged ions and causing the width of the depletion region to increase. Likewise, because the n-type region is connected to the positive terminal, the electrons will also be pulled away from the junction, with similar effect. This increases the voltage barrier causing a high resistance to the flow of charge carriers, thus allowing minimal electric current to cross the p–n junction. The increase in resistance of the p–n junction results in the junction behaving as an insulator."
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close-to) was needed for a semiconductor junction, not just electrical contact. OTOH a recent 'rm' edit taking away text about 'commonly' producing the junctions by alloying (not common now, even though common a long time ago) seems correct for current technology: alloying was a usual method of making germanium junction transistors in days gone by, but that was replaced by silicon wafer/diffusion technology.
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stuff. I like the old man saying: 'It is safe to say that nobody understands quantum mechanics.'( Richard
Feynman ). So, the theory is just after the real stuff. Unfortunately, the experiments are still confidential. We may never know how really the transistor was "invented" or works. We may know that what we use and know as viable theory today is a real junk.
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Not being an expert in semiconductor physics, I'm not sure, but I strongly suspect the figure A.A might not be accurate. Because electrons can recombine with holes, right? Therefore I'd expect that when you enter the charged region near the junction coming from the P side, hole density would start to
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separate semiconductor crystals, but did mention polycrystaline silicon solar cells. The alloy junction transistors and diodes that used to be made of germanium sort of used more than one crystal; the crystal structure melted near the indium that was placed on the germanium surface, and as the sample
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Last word: what we know now like theory are just presumtions. NOBODY saw the electrons and holes. They just assumed there should be something like this. All we know is deduction science, not the real thing. Someone will invent another theory in future, maybe, a new theory answering more question than
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There is still no clear explanation of what exactly is asymmetrical. Diffusion is symmetrical so it cannot be the explanation. Why is the double layer depleted of carriers, if carriers can be produced via electron-hole pair generation? Is it that the process of pair generation-recombination in the
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Condensed physics is just trying to describe the world as we know it with wonderful yet stupid equations - equations fail in explaining what happens to the general public... I am a physical chemist, but I'd like to speak as a real chemist: if I cannot make it, it does not exist. What is black? It is
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You are welcome ! My point here is to show that the "semiconductor" device was put together by experiment. People really started to play with crystals and they got something ... that was so strange even for a "scientist". Someone came with a theory full of holes and electrons. Then comes the quantum
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This information is incorrect because the 'holes' do not actually move; they are positive ions themselves, and therefore will not move through the wire away from the semiconductor, as only electrons flow through conductors (the wire in this case). I am posting this on the talk page to see if any of
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seem to be defined both as functions of x, and also as constants. I will presume that when they are constant, the implication is "concentration of acceptors on the p side of the junction" (and likewise donors), but the equations do not make it clear when the values are constant, and when they are
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I'm a grad student in condensed matter physics and I can assure you you're 100% wrong. A hole is a physically real quantum excitation of a semiconductor. It has a definite, well-defined mass (which is NOT negative, and NOT the same as the mass of a free electron), and it can undergo collisions. In
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The potential barrier of a pn junction can never be brought down to zero ….nor ever “reversed”, however strong the forward biasing voltage. The question then arises: where does the applied voltage drop ? Will it be possible to include the following numerical to illustrate the point ? Consider a
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I just put a 'dubious' tag on the unsourced statement that a pn junction can be made from two separate pieces (of p-type and n-type material). Can't put my finger on a source right now, but it used to be said often that a crystal structure in common (and either free of crystal defects or *very*
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I don't really think that this part has any value for outsiders. It's quite technical for ordinary people to understand. Additionaly I would like to see a geomtric explanation rather than a mathematical one. Any chance we can have more sources? That section contain almost no citations.
1826:. (I also moved this up, since it seems to be an assumption used in the charge neutrality equation.) I also note that the derivation had assumed that the reader knows that donor and acceptor ions are positively and negatively charged respectively, so I made that explicit as well.
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an observation of a localized area that emits no photons. What is a hole in a semiconductor? It is a absence of an electron in the valence band. Yes a hole can move, but further more, a hole is just a hole, not some sort of new particle with new magic properties (I think). —
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is the total bulk resistance of the neutral region. Therefore, up to a certain current level of the diode, the ideal exponential diode characteristics are applicable after which the characteristic becomes nearly linear mainly dominated by the bulk region.
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value was incorrect. Accordingly the forward current calculations are all changed and the current at V = 0.7029 V is now 5.41 mAmps and not 0,5Amps. Description of current when voltage applied is close to and greater than the barrier potential included.
829:= 0.703V, we obtain I = 3.4 mAmps ! An increase in forward bias voltage of 0.09V has caused the forward current to increase by nearly 33 times to 3.3mAmps and the bias voltage is yet less than the barrier potential. With V = 0.7029V < 0.703V (V
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Holes are used just for dumb explanation in basic electronics books, they have no physical existence. Please update the theory. It's silly to use expresions like "the holes are pushed". How can one push non-existent things like holes ? :-)
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857:) 00:46, 8 March 2010 (UTC) The potential barrier calculation was 0.76V was in error and is changed to 0.703V. Accordingly the forward current calculation at 0.759V is changed to 0.702 volts and is now 0.5 amps in place of 4.8amps.
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Also, I don't understand what you mean when you say "the experiments are still confidential". What experiments are you talking about? I am quite familiar with the invention and functioning of the transistor; it's not a secret.
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Yes, holes move, in the same way that bubbles in a liquid move. You could protest "but bubbles in water don't actually rise, what really happens is that the water moves downward", but in effect they do move.
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I think diagrams illustrating the effect of turning on forward and reversed bias would be helpful in understanding the physics; especially helpful would be electron/hole energy vs. position diagrams.
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HIs point is that it doesn't affect readers; and we don't have to use the code except to make this RM bot happy. I thought that wasn't a problem, but maybe my experience is obsolete there.
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If forward biased hasnt got its own article, i see no reason why reverse biased should, so i support either merging the article, or giving forward biased its own article also for consistency
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In the discussion of the functioning of a P-N junction as a rectifier, clearly consideration of both forward-bias and reverse-bias is essential. (Arnold
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I really take offense at your assertion that holes are only for "dumb explanation in basic electronics books". Current articles in peer-reviewed physics journals discuss holes.
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Maybe a little, but recombination is actually a relatively rare (low-probability) process; carriers can have relatively long lifetimes and long paths before recombining.
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In order to have a precise analysis of p-n junction, it's better to mention the "Donor levels" and "Acceptor levels" which appear in the Band diagram after doping.
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sounds like a good idea. It really is a feature/effect of the junction, not much to say on its own, and need to discuss the junction to understand it anyway.
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It's certainly bad, and the user has also been making other dubious changes (mostly by subtly changing words, usually with IMHO a detrimental effect), so
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by 69.225.251.134, looks bad. Since 69.225.251.134 has been making the same change all over the place, I will be opening a discussion on this at
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Is it important to change things to make it easier for bots to read? I thought this encyclopedia was written for people to read, not bots. --
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cooled, the crystal regrew. So there was new crystal material introduced, but it was aligned at the atomic level with the existing crystal.
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821:= 0.026 V at 300ºK or 27ºC, current I = 0.1045 mAmps. What we observe here is that a forward bias voltage of 0.6 V which is less than V
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They only "move" because of electrons. Protons remain static. I think we have to clarify that when we have an appropriate source.
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the long time editors have any ideas or preferences for how we should reword or change this before I go ahead and edit it myself.
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double layer is nonlinear with respect to the applied voltage? Is it similar to the charge transfer on the electrode surface?
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Any chance of show the "barrier potential" in a diagram, i have one but it is not good quality, and more of a ditty on it
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There is no difference between the character and the html code (though I also prefer to use the character). The reason I
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Hi. I noticed that there is some incorrect information under the "Reverse bias" section. In this section it is stated:
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Subsequent comments should be made in a new section on this talk page. No further edits should be made to this section.
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Subsequent comments should be made in a new section on the talk page. No further edits should be made to this section.
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Knowledge. If you would like to participate, you can choose to edit the article attached to this page, or visit the
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Is there a reason that no mathematical analysis of the operation of a PN junction has been included in this article?
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OK, I did a rewrite to try to make the variables clear, and added "in the depletion region" to the specification
1712:{\displaystyle \Delta {{V}_{0}}={\frac {kT}{q}}\ln \left({\frac {{{C}_{A}}{{C}_{D}}}{{{P}_{0}}{{N}_{0}}}}\right)}
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What does it do? You are not telling what is happening at the junction. Are the electrons having a party there?
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to delete these "External links modified" talk page sections if they want to de-clutter talk pages, but see the
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The section "Size of depletion region" is nearly incomprehensible because the variables are poorly defined.
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is because the RM bot (for whatever reason) cannot read the character properly, but can read the html.
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the actual one. Still the new one it will not be for sure a valid one. So, why to talk about holes ?
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on
Knowledge. If you would like to participate, please visit the project page, where you can join
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before doing mass systematic removals. This message is updated dynamically through the template
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825:= 0.703 V has caused a current of 0.1mA in the diode. For a forward bias voltage 0.69V < V
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Okay... if you want to talk about experiment rather than theory, then how do you explain the
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if you mean put the en-dash character in the title, as p–n junction, not the html code.
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The potential barrier cannot be made zero and currents for various forward bias voltages
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I modified the article to avoid saying that anyone would ever build a p-n junction with
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If you found an error with any archives or the URLs themselves, you can fix them with
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837:. And, after the current reaches 5.41 milliamps or so, the I-V relation will be I = I
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http://web.archive.org/web/20160107023541/http://web.ift.uib.no/~torheim/pnsjikt.pdf
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Where should I put information on how to calculate carrier concentrations and such?
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do not have P-N junctions. They have metal-semiconductor junctions (See
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This article was the subject of an educational assignment supported by
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after the link to keep me from modifying it. Alternatively, you can add
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moved P–n junction to P-n junction over redirect (Hyphen, not n-dash)
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electron and holes density in the charged regions around the junctions
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The explanation of PN junction operation is really the explanation of
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the 'holes' in the p-type material are pulled away from the junction
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to keep me off the page altogether. I made the following changes:
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http://www.staff.ncl.ac.uk/j.p.goss/Research/Electrical_levels
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in the banner shell. Please resolve this conflict if possible.
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This article has been given a rating which conflicts with the
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http://www.physics.udel.edu/~watson/scen103/99s/clas0426.html
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http://www.doitpoms.ac.uk/tlplib/semiconductors/intrinsic.php
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When you have finished reviewing my changes, please set the
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I have just added archive links to one external link on
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The following discussion is an archived discussion of a
809:= 9.17 x 10 Amps and using the formula for current I = I
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Methods of making PN junctions -- dubious tag discussed
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I agree. I have improved the lead to at least link to
773:= 5 x 10cm at 300°K with the intrinsic concentration n
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Start-Class articles with conflicting quality ratings
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The above discussion is preserved as an archive of a
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817:-1), we obtain for a forward bias V of 0.6V, V
673:Pair generation / recombination asymmetrical ?
525:I think formatting the "See also" section, as
1934:C-Class physics articles of High-importance
1453:Holes move; they are one of the two mobile
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1493:
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1412:
1411:Talk to my owner
1407:
1382:
1381:
1360:
1348:
1313:
1305:
1219:depletion region
1212:
1190:
1177:
1130:: junction of p
952:
633:
595:
445:
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387:
340:
311:Schottky_barrier
234:
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92:
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63:
55:
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31:
25:
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16:
1974:
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1914:
1913:
1895:
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1874:
1854:
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1843:Geoffrey.landis
1840:
1828:Geoffrey.landis
1804:
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1791:
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1545:
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1536:
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1532:
1491:
1488:
1486:
1473:Geoffrey.landis
1455:charge carriers
1425:
1415:
1410:
1375:
1368:have permission
1358:
1342:
1307:
1299:
1285:
1239:
1191:
1187:
1182:
1173:
1051:
1030:
948:
938:
907:ThorinMuglindir
902:
883:
876:
872:
859:Sridhar10chitta
851:Sridhar10chitta
849:Sridhar Chitta
844:
840:
836:
832:
828:
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796:
792:
788:
784:
780:
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768:
762:
703:
684:
675:
616:
578:
574:
523:
500:heterojunctions
496:
477:
431:
428:
427:
424:
367:
365:Merger proposal
307:Schottky diodes
304:
292:Depletion zones
288:
286:Depletion zones
231:
228:
225:
222:
221:
196:
189:
169:
166:
137:High-importance
120:
117:
114:
111:
110:
88:
81:
62:High‑importance
61:
32:on Knowledge's
29:
12:
11:
5:
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1962:
1961:
1956:
1951:
1946:
1941:
1936:
1931:
1926:
1873:
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1520:
1483:
1424:
1421:
1408:
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1401:
1394:
1327:
1326:
1318:Added archive
1284:
1281:
1238:
1235:
1234:
1233:
1186:
1183:
1181:
1180:
1170:requested move
1164:
1163:
1146:
1121:
1120:
1119:
1118:
1117:
1116:
1115:
1050:
1047:
1046:
1045:
1038:
1029:
1026:
977:
975:
956:
955:
945:requested move
939:
937:
936:Requested move
934:
933:
932:
901:
898:
887:117.195.217.25
881:
874:
870:
842:
838:
834:
830:
826:
822:
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806:
802:
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674:
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612:
611:
573:
570:
569:
568:
522:
519:
504:multijunctions
495:
492:
476:
473:
435:
423:
420:
371:Reverse-biased
366:
363:
338:
336:
335:
303:
300:
287:
284:
282:
278:
277:
274:
273:
270:
269:
262:Mid-importance
258:
252:
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244:
238:
237:
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202:
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185:
173:
172:
170:Mid‑importance
161:
149:
148:
145:
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133:
127:
126:
124:
107:the discussion
94:
93:
90:Physics portal
77:
65:
64:
56:
44:
43:
37:
26:
9:
6:
4:
3:
2:
1971:
1960:
1957:
1955:
1952:
1950:
1947:
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1932:
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1927:
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1890:
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1677:
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1622:
1619:
1613:
1607:
1602:
1573:
1569:
1546:
1542:
1519:
1516:
1512:
1511:electron hole
1508:
1507:
1506:
1505:
1504:
1500:
1497:
1494:
1484:
1482:
1478:
1474:
1469:
1468:
1467:
1464:
1460:
1459:Electron hole
1456:
1452:
1451:
1450:
1449:
1445:
1441:
1435:
1433:
1428:
1420:
1419:
1413:
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1373:
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1355:
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1321:
1317:
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1311:
1303:
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1288:
1280:
1279:
1275:
1271:
1267:
1266:
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1251:
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1246:
1242:
1232:
1228:
1224:
1220:
1216:
1215:
1214:
1211:
1207:
1203:
1199:
1195:
1179:
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1147:
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1125:
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1096:
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1036:
1035:User:Headbomb
1032:
1031:
1025:
1024:
1020:
1016:
1012:
1008:
1007:Eye-hand span
1004:
1003:Eye–hand span
1000:
996:
992:
988:
984:
980:
974:
973:
969:
965:
961:
954:
951:
946:
941:
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931:
927:
923:
919:
918:
917:
916:
912:
908:
897:
896:
892:
888:
878:
868:
864:
860:
856:
852:
847:
841:(e -1)where R
753:
749:
745:
740:
736:
735:
734:
731:
728:
724:
720:
719:
718:
717:
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650:Keenan Pepper
646:
643:
640:
636:
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632:
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624:
623:79.114.86.222
620:
610:
607:
606:Keenan Pepper
603:
598:
597:
596:
594:
590:
586:
582:
567:
563:
559:
555:
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532:
528:
518:
517:
513:
509:
505:
501:
491:
490:
486:
482:
481:69.134.60.173
472:
471:
467:
463:
458:
457:
453:
449:
433:
419:
418:
414:
410:
409:193.60.83.241
405:
403:
399:
395:
391:
384:
383:
380:
376:
372:
362:
360:
356:
352:
348:
344:
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331:
330:
326:
323:Corrected. -
322:
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267:
263:
257:
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253:
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142:
138:
132:
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125:
108:
104:
100:
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91:
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78:
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71:
70:
66:
60:
57:
54:
50:
49:
45:
41:
35:
27:
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18:
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1891:
1885:through the
1875:
1533:
1440:VirtualLibri
1436:
1431:
1429:
1426:
1403:
1378:source check
1357:
1351:
1338:
1334:
1330:
1328:
1292:P–n junction
1289:
1286:
1268:
1263:
1258:
1253:
1248:
1243:
1240:
1223:Euan Richard
1192:— Preceding
1188:
1174:
1167:
1148:
1131:
1123:
1054:
994:
983:P–n junction
979:P-n junction
976:
959:
957:
949:
942:
903:
879:
848:
763:
738:
723:this article
704:
685:
676:
661:
657:
613:
585:79.114.18.65
575:
524:
497:
478:
462:Greengadgetz
459:
448:Greengadgetz
425:
406:
385:
368:
337:
327:
305:
289:
281:
261:
215:project page
204:
136:
96:
40:WikiProjects
1461:article. --
1345:Sourcecheck
1270:Homayoun mh
1091:Wtshymanski
964:Vegaswikian
877:indicated.
639:Hall effect
617:—Preceding
604:made of?? —
579:—Preceding
494:Information
394:24.6.170.15
388:—Preceding
341:—Preceding
223:Electronics
211:electronics
167:Start‑class
164:Electronics
1918:Categories
1073:changed it
1042:User:Mauls
1028:Past moves
960:page moved
1515:Chetvorno
1463:Chetvorno
1398:this tool
1391:this tool
1185:confusing
708:Terry0051
665:Teun Zijp
315:Tonsofpcs
1901:PrimeBOT
1404:Cheers.—
1302:cbignore
1206:contribs
1198:Jangirke
1194:unsigned
1105:Dicklyon
1059:Dicklyon
999:MOS:DASH
987:Headbomb
922:Dicklyon
688:Zylorian
619:unsigned
581:unsigned
390:unsigned
355:contribs
343:unsigned
1414::Online
1331:checked
1296:my edit
1153:JorisvS
1149:Support
1124:Support
1077:Jenks24
1055:Support
1015:Wbm1058
991:en dash
797:,with V
602:exciton
347:Acwcook
296:Wjbeaty
264:on the
139:on the
112:Physics
103:Physics
59:Physics
30:C-class
1859:(talk)
1496:(talk)
1339:failed
1310:nobots
1128:WP:MOS
744:Jc3s5h
535:Jc3s5h
527:edited
379:DMacks
36:scale.
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880:The I
873:and N
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294:. --
242:Start
1905:talk
1832:talk
1771:talk
1561:and
1477:talk
1444:talk
1335:true
1274:talk
1227:talk
1202:talk
1157:talk
1151:. --
1140:talk
1136:Glrx
1132:with
1109:talk
1095:talk
1081:talk
1063:talk
1019:talk
968:talk
926:talk
911:talk
891:talk
863:talk
855:talk
748:talk
712:talk
692:talk
627:talk
589:talk
562:talk
539:talk
533:. --
512:talk
502:and
485:talk
466:talk
452:talk
413:talk
398:talk
351:talk
131:High
1899:by
1889:.
1855:NOV
1852:AXO
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1372:RfC
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1337:or
1322:to
1172:.
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558:LjL
508:Mac
506:.--
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