1892:
2117:-based selectors allow higher densities, utilizing < 4 F cell area by stacking memory layers horizontally or vertically. Often the isolation capabilities are inferior to the use of transistors if the on/off ratio for the selector is not sufficient, limiting the ability to operate very large arrays in this architecture. Chalcogenide-based threshold switches have been demonstrated as a viable selector for high-density PCM arrays
4742:
2302:—an additional two distinct intermediate states represent different degrees of partial crystallization, allowing for twice as many bits to be stored in the same physical area. In June 2011, IBM announced that they had created stable, reliable, multi-bit phase-change memory with high performance and stability.
1832:
allowed the material state to be more carefully controlled, allowing it to be transformed into one of four distinct states: the previous amorphous or crystalline states, along with two new partially crystalline ones. Each of these states has different electrical properties that can be measured during
2002:
In addition, with flash, each burst of voltage across the cell causes degradation. As the size of the cells decreases, damage from programming grows worse because the voltage necessary to program the device does not scale with the lithography. Most flash devices are rated for, currently, only 5,000
2153:) per square inch will be possible if the technology can be perfected. The basic idea is to reduce the amount of wiring needed on-chip; instead of wiring every cell, the cells are placed closer together and read by current passing through the MEMS probes, acting like wires. This approach resembles
1809:, it will transform into a crystalline state with a much lower resistance. The time to complete this phase transition is temperature-dependent. Cooler portions of the chalcogenide take longer to crystallize, and overheated portions may be remelted. A crystallization time scale on the order of 100
1990:
PRAM can offer much higher performance in applications where writing quickly is important, both because the memory element can be switched more quickly, and also because single bits may be changed to either 1 or 0 without needing to first erase an entire block of cells. PRAM's high performance,
2431:(~t). This severely limits the ability for multilevel operation, since a lower intermediate state would be confused with a higher intermediate state at a later time, and could also jeopardize standard two-state operation if the threshold voltage increases beyond the design value.
2442:
PRAM chips. Although the NOR flash chips they intended to replace operated in the −40-85 °C range, the PRAM chips operated in the 0-70 °C range, indicating a smaller operating window compared to NOR flash. This is likely due to the use of highly temperature-sensitive
2213:
devices are only 4 Mb, for example. The high density of
Samsung's prototype PRAM device suggested it could be a viable flash competitor, and not limited to niche roles as other devices have been. PRAM appeared to be particularly attractive as a potential
2403:
Phase-change memory is susceptible to a fundamental tradeoff of unintended vs. intended phase-change. This stems primarily from the fact that phase-change is a thermally driven process rather than an electronic process. Thermal conditions that allow for fast
4116:
2324:
In April 2010, Numonyx announced the Omneo line of 128-Mbit NOR-compatible phase-change memories. Samsung announced shipment of 512 Mb phase-change RAM (PRAM) in a multi-chip package (MCP) for use in mobile handsets by Fall 2010.
2105:-selected arrays, only the selected bit lines contribute reverse bias leakage current. The difference in leakage current is several orders of magnitude. A further concern with scaling below 40 nm is the effect of discrete
3837:
Khaddam-Aljameh, Riduan; Stanisavljevic, Milos; Mas, Jordi Fornt; Karunaratne, Geethan; Brändli, Matthias; Liu, Feng; Singh, Abhairaj; Müller, Silvia M.; Egger, Urs; Petropoulos, Anastasios; Antonakopoulos, Theodore (2022).
2014:
PRAM devices also degrade with use, for different reasons than flash, but degrade much more slowly. A PRAM device may endure around 100 million write cycles. PRAM lifetime is limited by mechanisms such as degradation due to
1797:, or Ge:Sb:Te element ratio, is 2:2:5 in GST. When GST is heated to a high temperature (over 600 °C), its chalcogenide crystallinity is lost. Once cooled, it is frozen into an amorphous glass-like state and its
3718:
Burr, Geoffrey W.; Shelby, Robert M.; Sidler, Severin; di Nolfo, Carmelo; Jang, Junwoo; Boybat, Irem; Shenoy, Rohit S.; Narayanan, Pritish; Virwani, Kumar; Giacometti, Emanuele U.; Kurdi, Bulent N. (November 2015).
1668:
has also argued that PCM should be considered a memristor. However, this terminology has been challenged, and the potential applicability of memristor theory to any physically realizable device is open to question.
2825:
Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi; Kim, Sangbum; Sosa, Norma E.; Papandreou, Nikolaos; Lung, Hsiang-Lan; Pozidis, Haralampos; Eleftheriou, Evangelos (June 2016).
2294:) PRAM array prototype. The prototype stored two logical bits in each physical cell, in effect 256 Mb of memory stored in a 128 Mb physical array. This means that instead of the normal two states—fully
3375:
Zhou, X.; Wu, L.; Song, Z.; Rao, F.; Ren, K.; Peng, C.; Song, S.; Liu, B.; Xu, L.; Feng, S. (2013). "Phase transition characteristics of Al-Sb phase change materials for phase change memory application".
1884:
has three distinct resistance levels, offering the potential to store three bits of data in two cells as opposed to two (nine states possible for the pair of cells, using eight of those states yields log
3236:
Caravati, Sebastiano; Bernasconi, Marco; Kühne, Thomas D.; Krack, Matthias; Parrinello, Michele (2007). "Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials".
1723:, published an article on the technology. However, material quality and power consumption issues prevented commercialization of the technology. More recently, interest and research have resumed as
2089:
for a given cell size. However, the concern with using a diode stems from parasitic currents to neighboring cells, as well as a higher voltage requirement, resulting in higher power consumption.
3534:
Karpov, I.V.; Kencke, D.; Kau, D.; Tang, S.; Spadini, G. (2010). "Phase Change Memory with
Chalcogenide Selector (PCMS): Characteristic Behaviors, Physical Models and Key Material Properties".
2314:
Also in
February 2008, Intel and STMicroelectronics shipped prototype samples of their first PRAM product to customers. The 90 nm, 128 Mb (16 MB) product was called Alverstone.
3141:"Electric-Field Induced Filament Formation in As-Te-Ge Semiconductor" C.H. Sie, R. Uttecht, H. Stevenson, J. D. Griener and K. Raghavan , Journal of Non-Crystalline Solids, 2, 358–370,1970
2045:
manufacturing requiring higher soldering temperatures. A manufacturer using PRAM parts must provide a mechanism to program the PRAM "in-system" after it has been soldered in place.
1957:
4268:
3634:
1908:. PRAM's temperature sensitivity is perhaps its most notable drawback, one that may require changes in the production process of manufacturers incorporating the technology.
3499:
Pirovano, A.; Redaelli, A.; Pellizzer, F.; Ottogalli, F.; Tosi, M.; Ielmini, D.; Lacaita, A.L.; Bez, R. (2004). "Reliability study of phase-change nonvolatile memories".
4008:
2055:
By carefully modulating the amount of charge stored on the gate, flash devices can store multiple (usually two) bits in each physical cell. In effect, this doubles the
4253:
2360:
which do not require very high computing precision. In 2021, IBM published a full-fledged in-memory computing core based on multi-level PCM integrated in 14 nm
2246:
in
October. They showed a 128 Mb part that began manufacture at STMicroelectronics's research lab in Agrate, Italy. Intel stated that the devices were strictly
3177:
2226:
offers similar densities to
Samsung's PRAM prototype and already offers bit addressability (unlike NAND where memory is accessed in banks of many bytes at a time).
1592:
in a single cell, but the difficulties in programming cells in this way has prevented these capabilities from being implemented in other technologies (most notably
615:
4324:
4479:
2345:
More recently, there is significant interest in the application of PCM for in-memory computing. The essential idea is to perform computational tasks such as
4098:
2033:, or even purchased pre-programmed. The contents of a PRAM, however, are lost because of the high temperatures needed to solder the device to a board (see
3895:
Karpov, I.V.; Mitra, M.; Kau, D.; Spadini, G.; Kryukov, Y.A.; Karpov, V.G. (2007). "Fundamental drift of parameters in chalcogenide phase change memory".
3721:"Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element"
2205:, was just coming to market), other technologies competing to replace flash in general offered lower densities (larger cell sizes). The only production
2412:
for crystallization it is possible to have fast crystallization at programming conditions while having very slow crystallization at normal conditions.
4314:
2622:: Intel's chief technology officer Justin Rattner is set to give the first public demonstration of the company's PRAM (phase-change RAM) technology
4352:
2093:
resistance is necessarily larger than that of a diode, meaning operating voltage must exceed 1 V by a wide margin to guarantee adequate
2052:
of the memory element in PRAM is more stable; at the normal working temperature of 85 °C, it is projected to retain data for 300 years.
2042:
3673:
2097:
current from the diode. Perhaps the most severe consequence of using a diode-selected array, in particular for large arrays, is the total
1773:
Although PRAM has not yet reached the commercialization stage for consumer electronic devices, nearly all prototype devices make use of a
4269:"Western Digital's HGST division creates new phase-change SSD that's orders of magnitude faster than any NAND flash drive on the market"
2540:: PRAM-related patent applications filed by Toshiba, Hitachi, Macronix, Renesas, Elpida, Sony, Matsushita, Mitsubishi, Infineon and more
1895:
A cross-section of two PRAM memory cells. One cell is in low resistance crystalline state, the other in high resistance amorphous state.
4773:
3013:
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). "On the physical properties of memristive, memcapacitive and meminductive systems".
2408:
should not be too similar to standby conditions, e.g. room temperature, otherwise data retention cannot be sustained. With the proper
2333:
In
December 2018 STMicroelectronics presented design and performance data for a 16 MB ePCM array for a 28 nm fully depleted
4377:
3586:
3638:
2306:
had a joint developmental agreement and a technology license agreement with IBM for the development of multi-level PRAM technology.
1766:). In those instances, the material's optical properties are manipulated, rather than its electrical resistivity, as chalcogenide's
1646:
pulse. This new
Interfacial Phase-Change Memory (IPCM) has had many successes and continues to be the site of much active research.
4226:
4198:
610:
4319:
630:
4447:
4405:
2049:
1963:
state from 1 to 0 or 0 to 1. Changing the bit's state requires removing the accumulated charge, which demands a relatively large
1588:
state. PCM also has the ability to achieve a number of distinct intermediary states, thereby having the ability to hold multiple
4596:
1504:
2258:
PRAM is also a promising technology in the military and aerospace industries where radiation effects make the use of standard
4172:
4012:
2742:
2416:
1045:
4566:
4043:
3659:
3568:
3474:
4309:
3107:
Pohm, A.; Sie, C.; Uttecht, R.; Kao, V.; Agrawal, O. (1970). "Chalcogenide glass bistable resistivity (Ovonic) memories".
4685:
4425:
4345:
3215:
3190:
1701:
array. A cinematographic study in 1970 established that the phase-change-memory mechanism in chalcogenide glass involves
17:
2698:: Micron announces availability of Phase-Change Memory for mobile devices - the first PRAM solution in volume production
1254:
206:
251:
3306:
2274:
immunity. In addition, BAE claims a write cycle endurance of 10, which will allow it to be a contender for replacing
2048:
The special gates used in flash memory "leak" charge (electrons) over time, causing corruption and loss of data. The
1754:
0, while the crystalline, low resistance state represents a 1. Chalcogenide is the same material used in re-writable
1557:
993:
936:
256:
104:
4487:
4102:
3840:"HERMES-Core–A 1.59-TOPS/mm² PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs"
2346:
2070:, making them unsuitable for many space and military applications. PRAM exhibits higher resistance to radiation.
1319:
979:
923:
4549:
4527:
4338:
2126:
1971:, which takes some time to build up power. General write times for common flash devices are on the order of 100
1005:
674:
486:
82:
3694:
3607:
2881:
Simpson, R.E.; P. Fons; A. V. Kolobov; T. Fukaya; et al. (July 2011). "Interfacial phase-change memory".
4746:
4712:
3556:
2479:: Charles H. Sie published a dissertation at Iowa State University on chalcogenide phase-change-memory device
2275:
2137:
is dragged beneath thousands or even millions of electrical probes that can read and write the chalcogenide.
1354:
4055:
3336:
1919:. The gate is constructed with a special "stack" designed to trap charges (either on a floating gate or in
1728:
705:
600:
501:
3354:
3289:
Horii, H.; et al. (2003). "A novel cell technology using N-doped GeSbTe films for phase change RAM".
2185:
switches. The announcement was something of a surprise, and it was especially notable for its fairly high
4069:
2350:
2078:
1980:
1929:
662:
2066:
Because flash devices trap electrons to store information, they are susceptible to data corruption from
1599:
Recent research on PCM has been directed towards attempting to find viable material alternatives to the
4717:
4653:
4070:"Intel and Numonyx Achieve Research Milestone with Stacked, Cross Point Phase Change Memory Technology"
2485:: US Patent 3,448,302 (Shanefield) licensed to Ovshinsky claims first reliable operation of PRAM device
2186:
2056:
1838:
1497:
1294:
1193:
1065:
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4700:
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2716:: Western Digital demonstrates prototype PCM storage with 3 million I/Os and 1.5 microsecond latency
2638:: Intel and STMicroelectronics announce four-state MLC PRAM and begin shipping samples to customers.
1693:
that both described and demonstrated the feasibility of a phase-change-memory device by integrating
4768:
4472:
2992:
Meuffels, P.; Soni, R. (2012). "Fundamental Issues and
Problems in the Realization of Memristors".
2969:
1366:
1349:
838:
124:
3652:
1584:, or to hold it in its crystallization temperature range for some time, thereby switching it to a
4665:
4638:
4467:
4400:
4213:
4087:
Numonyx to
Present Phase-Change Memory Research Results at Leading Technology Industry Conference
4086:
3155:
2662:: Intel and Numonyx announce they have found a way to stack phase-change memory arrays on one die
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99:
52:
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4141:
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Sebastian, Abu; Le Gallo, Manuel; Khaddam-Aljameh, Riduan; Eleftheriou, Evangelos (July 2020).
3185:
3040:
2321:
announced a collaborative effort in the development of PRAM market-tailored hardware products.
1711:
1234:
451:
321:
261:
2564:: Samsung announces successful 256 Mbit PRAM array, touts 400 μA programming current
2022:
during programming, metal (and other material) migration, and other mechanisms still unknown.
583:
4601:
4462:
4361:
2439:
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37:
3695:"Phase-Change Memory (PCM) - Technology, Advantages & Applications - STMicroelectronics"
2372:
The greatest challenge for phase-change memory has been the requirement of high programming
4648:
4611:
4591:
4507:
4388:
4254:"IBM demonstrates next-gen phase-change memory that's up to 275 times faster than your SSD"
4155:
Chung, H.; et al. (2011). "A 58nm 1.8V 1 Gb PRAM with 6.4 MB/s program BW".
3982:
3939:
3904:
3851:
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3432:
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3032:
2941:
2890:
2839:
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2496:
2334:
2206:
2114:
1874:
1821:
patent application indicates PRAM may achieve switching times as fast as five nanoseconds.
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1301:
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266:
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109:
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8:
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1996:
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134:
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3736:
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3259:
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4435:
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4393:
4178:
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3756:
3538:. MRS Proceedings. Vol. 1250. Cambridge University Press. pp. G14-01–H07-01.
3516:
3456:
3312:
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3245:
3066:
3022:
2993:
2914:
2863:
2807:
2748:
2470:
2460:
2239:
1817:, which have a switching time on the order of two nanoseconds. However, a January 2006
1813:
is commonly used. This is longer than conventional volatile memory devices like modern
1686:
1561:
1439:
1404:
1050:
476:
461:
406:
401:
391:
366:
291:
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to "suck" the electrons off the floating gate. This burst of voltage is provided by a
4544:
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4182:
4168:
4132:
3959:
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3823:
3811:
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3748:
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2906:
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2811:
2799:
2736:
2680:: Samsung releases 512 Mbit PRAM with 65 nm process, in Multi-Chip-Package.
2420:
2409:
2222:
flash devices. State-of-the-art capacities on NAND passed 512 Mb some time ago.
2219:
2130:
2019:
1924:
1920:
1116:
1111:
1035:
1000:
854:
832:
731:
690:
593:
431:
156:
3775:
3543:
3520:
3316:
3070:
2867:
2710:: IBM demonstrates combining PCM, conventional NAND, and DRAM on a single controller
2059:, reducing cost. PRAM devices originally stored only a single bit in each cell, but
1689:
as a potential memory technology. In 1969, Charles Sie published a dissertation at
4690:
4606:
4522:
4502:
4457:
4452:
4160:
3990:
3947:
3912:
3859:
3795:
3760:
3740:
3635:"Intel, STMicroelectronics Deliver Industry's First Phase Change Memory Prototypes"
3539:
3508:
3460:
3440:
3393:
3294:
3263:
3124:
3050:
2949:
2918:
2898:
2847:
2789:
2644:: Numonyx announces mass production 128 Mbit PRAM device to selected customer.
2576:; Hitachi and Renesas announce 1.5 V PRAM with 100 μA programming current
2444:
2393:
2291:
2247:
2189:. The prototype featured a cell size of only 46.7 nm, smaller than commercial
2110:
2086:
2034:
2004:
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present manufacturing challenges, since etching and polishing of the material with
1767:
1639:
1573:
1565:
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1445:
1371:
1334:
1324:
1289:
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1023:
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781:
466:
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186:
171:
67:
57:
4202:
2424:
2405:
2373:
2295:
2138:
2129:(micro-electric-mechanical-systems) probe storage devices. These devices are not
1992:
1802:
1743:
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1344:
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62:
33:
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4695:
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4299:
4164:
4099:"Numonyx Memory Solutions - Numonyx Introduces New Phase Change Memory Devices"
3720:
3298:
2827:
2794:
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2038:
1706:
1702:
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743:
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114:
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3128:
2954:
2353:. PCM-based in-memory computing could be interesting for applications such as
2290:
In
February 2008, Intel and STMicroelectronics revealed the first multilevel (
1617:(GST), with mixed success. Other research has focused on the development of a
4762:
4727:
4554:
3994:
3951:
3873:
3807:
3752:
3744:
3512:
2859:
2803:
2546:: Nanochip licenses PRAM technology from Ovonyx for use in MEMS probe storage
2354:
2349:
in the memory array itself by exploiting PCM's analog storage capability and
2158:
2008:
1806:
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2910:
2726:
memory where phase-change alloy is used as a storage part of a memory cell.
2492:
2190:
2134:
2090:
1905:
1904:
PRAM's switching time and inherent scalability make it more appealing than
1774:
1755:
1731:
memory technologies are expected to encounter scaling difficulties as chip
1724:
1716:
1694:
1635:
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2650:: Samsung's phase-change RAM will go into mass production starting in June
4626:
4621:
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1972:
1968:
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1732:
1475:
1427:
861:
396:
336:
241:
4330:
2415:
Probably the biggest challenge for phase-change memory is its long-term
4586:
4214:
Micron Announces Availability of Phase Change Memory for Mobile Devices
3411:
Simpson, R. E. (2010). "Toward the Ultimate Limit of Phase Change in Ge
2674:: Numonyx releases Omneo PRAM Series (P8P and P5Q), both in 90 nm.
2389:
2381:
2102:
1976:
1810:
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650:
416:
411:
286:
151:
77:
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3444:
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3093:
2656:: Samsung announces mass production start of 512 Mbit PRAM device
1999:
roles that are currently performance-limited by memory access timing.
1891:
4616:
2723:
2438:
released its Omneo line of parallel and serial interface 128 Mb
2428:
2388:). The contact between the hot phase-change region and the adjacent
2223:
2142:
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1866:
1862:
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1850:
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1778:
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1649:
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948:
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588:
356:
276:
3660:"Samsung Electronics and Numonyx Join Forces on Phase Change Memory"
2932:
Chua, L. O. (2011), "Resistance switching memories are memristors",
2880:
2832:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems
4537:
4512:
2400:
when expanding at a different rate from the phase-change material.
2397:
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166:
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3250:
3176:
Moore, Gordon E.; Neale, R.G.; Nelson, D.L. (September 28, 1970).
3027:
2998:
2510:: Lockheed Martin works with Ovonyx on PRAM for space applications
2141:'s micro-mover technology can accurately position the platter to 3
1923:). The presence of charge within the gate shifts the transistor's
1642:
by changing the co-ordination state of the germanium atoms with a
4026:
3557:
SAMSUNG Introduces the Next Generation of Nonvolatile Memory—PRAM
3086:
Memory cell using bistable resistivity in amorphous As-Te-Ge film
2613:
2504:: Ovonyx joint venture is formed to commercialize PRAM technology
2435:
2392:
is another fundamental concern. The dielectric may begin to leak
2318:
2299:
2271:
2198:
2174:
2170:
2146:
1964:
1739:
1665:
1585:
1284:
1274:
1269:
1229:
1131:
1126:
1106:
911:
886:
876:
667:
2266:, referred to as C-RAM, claiming excellent radiation tolerance (
2262:
such as flash impractical. PRAM devices have been introduced by
2193:
devices available at the time. Although flash devices of higher
1801:
is high. By heating the chalcogenide to a temperature above its
3536:
Symposium G – Materials and Physics for Nonvolatile Memories II
3178:"Nonvolatile and reprogramable, the read-mostly memory is here"
2459:: Kolomiets and Gorunova revealed semiconducting properties of
2377:
2279:
2106:
2082:
2026:
2016:
1916:
1870:
1790:
1763:
1603:
1279:
1239:
1121:
1010:
808:
351:
4124:
2606:: IBM Research Labs demonstrate a prototype 3 by 20 nanometers
2528:: Macronix files a patent application for transistor-less PRAM
4532:
3587:"IBM develops 'instantaneous' memory, 100x faster than flash"
3291:
2003 Symposium on VLSI Technology. Digest of Technical Papers
2629:
2600:: Intel and STMicroelectronics show a 128 Mbit PRAM chip
2385:
2235:
2210:
2182:
2125:
In August 2004, Nanochip licensed PRAM technology for use in
2074:
2060:
1825:
1759:
1720:
1698:
1643:
1214:
1151:
1146:
1141:
803:
760:
754:
640:
620:
605:
3235:
2824:
2588:: BAE Systems begins selling the first commercial PRAM chip
2361:
1984:
1814:
1209:
496:
146:
3012:
2522:: ST Microelectronics licenses PRAM technology from Ovonyx
1865:
can change the material's composition. Materials based on
1750:
values. The amorphous, high resistance state represents a
4284:
3973:
Kolomiets, B. T. (1964). "Vitreous Semiconductors (II)".
3776:"Memory devices and applications for in-memory computing"
2154:
2085:. Using a diode or a BJT provides the greatest amount of
1960:
1959:
higher or lower, corresponding to a change in the cell's
1834:
1746:
states of chalcogenide glass have dramatically different
1589:
1249:
1136:
906:
3930:
Kolomiets, B. T. (1964). "Vitreous Semiconductors (I)".
3717:
3152:"A Cinematic Study of Mechanisms of Phase Change Memory"
2218:, where device capacities typically lag behind those of
1975:(for a block of data), about 10,000 times the typical 10
4157:
2011 IEEE International Solid-State Circuits Conference
2552:: Samsung announces successful 64 Mbit PRAM array
2242:, who demonstrated their own PRAM devices at the 2006
3894:
3501:
IEEE Transactions on Device and Materials Reliability
2970:"HP and Hynix to produce the memristor goods by 2013"
2447:
to provide the high currents needed for programming.
1932:
2632:
begins pursuing PRAM by licensing Ovonyx' technology
4044:
Engadget Samsung PRAM chips go into mass production
3608:"SK hynix and IBM Sign Joint Development for PCRAM"
3533:
2828:"Recent Progress in Phase-Change Memory Technology"
2770:"An overview of phase-change memory device physics"
2686:: Samsung presented 58 nm 1.8V 1 Gb PRAM.
4227:"Micron: Hot DRAM. We don't need no steenkin' PCM"
4196:A 20nm 1.8V 8Gb PRAM with 40MB/s Program Bandwidth
2692:: Samsung presented 20 nm 1.8V 8 Gb PRAM
2101:leakage current from the unselected bit lines. In
2041:). This was made worse by the requirement to have
1951:
4056:"Samsung moves phase-change memory to production"
3629:
3627:
3106:
2767:
2704:: Micron withdraws all PCM parts from the market.
2380:/cm, compared to 10...10 A/cm for a typical
4760:
4027:"IT news, careers, business technology, reviews"
3579:
3569:"Intel Previews Potential Replacement for Flash"
3355:"Will phase-change memory replace flash memory?"
3175:
2668:: Numonyx announces 1 Gb 45 nm product
2234:Samsung's announcement was followed by one from
3666:
3475:"Intel to Sample Phase Change Memory This Year"
2768:Le Gallo, Manuel; Sebastian, Abu (2020-03-30).
2011:to spread writes across many physical sectors.
1833:reads, allowing a single cell to represent two
4315:BAE C-RAM Radiation-Hardened NVM press release
3624:
2582:: Samsung licenses PRAM technology from Ovonyx
2516:: Intel invests in Ovonyx, licenses technology
2063:'s recent advances have removed this problem.
4346:
3374:
2594:: Samsung announces 512 Mbit PRAM device
2558:: Elpida licenses PRAM technology from Ovonyx
2473:files first patent on phase-change technology
2073:PRAM cell selectors can use various devices:
1770:also changes with the state of the material.
1656:devices, including PCM, should be considered
1564:. In PCM, heat produced by the passage of an
1498:
3006:
2991:
2985:
1991:thousands of times faster than conventional
1869:and antimony are more thermally stable than
4320:BAE C-RAM Radiation-Hardened NVM data sheet
4310:European\Phase Change and Ovonics Symposium
2025:Flash parts can be programmed before being
4741:
4353:
4339:
3216:"Is NAND flash memory a dying technology?"
2133:. Instead, a very small platter coated in
1505:
1491:
4360:
3972:
3929:
3863:
3467:
3330:
3328:
3326:
3249:
3044:
3026:
2997:
2961:
2953:
2793:
1933:
1911:Flash memory works by modulating charge (
2534:: Samsung begins work on PRAM technology
2328:
1890:
1560:. PRAMs exploit the unique behaviour of
4448:Carbon nanotube field-effect transistor
4406:Applications of artificial intelligence
3674:"Samsung to ship MCP with phase-change"
3550:
3410:
3404:
2309:
2164:
1995:, makes it particularly interesting in
14:
4761:
4597:Differential technological development
4266:
4251:
4224:
3334:
3323:
3090:Retrospective Theses and Dissertations
2967:
2570:: Intel increases investment in Ovonyx
2427:state slowly increases according to a
2340:
2229:
4334:
4154:
3725:IEEE Transactions on Electron Devices
3637:. Numonyx. 2008-02-06. Archived from
3288:
2925:
2774:Journal of Physics D: Applied Physics
2743:Magnetoresistive random-access memory
1849:Phase-change memory devices based on
1046:Vision Electronic Recording Apparatus
4567:Three-dimensional integrated circuit
3844:IEEE Journal of Solid-State Circuits
2931:
2616:licenses PRAM technology from Ovonyx
1844:
4686:Future-oriented technology analysis
4426:Progress in artificial intelligence
3094:https://lib.dr.iastate.edu/rtd/3604
3092:(PhD). Iowa State University. 3604
3083:
2396:at higher temperature, or may lose
2285:
1952:{\displaystyle \,V_{\mathrm {th} }}
1576:is used to either quickly heat and
24:
1943:
1940:
1888: 8 = 3 bits).
207:Data validation and reconciliation
25:
4785:
4774:Non-volatile random-access memory
4278:
4225:Mellor, Chris (14 January 2014).
2968:Mellor, Chris (10 October 2011),
2347:matrix-vector-multiply operations
2120:
1899:
1709:. In the September 1970 issue of
1685:first explored the properties of
1652:has argued that all two-terminal
1558:non-volatile random-access memory
257:Distributed file system for cloud
4740:
4101:. April 25, 2010. Archived from
4009:"Phase Change to Replace Flash?"
3335:Greene, Kate (4 February 2008).
105:Areal density (computer storage)
4463:Fourth-generation optical discs
4295:Energy Conversion Devices, Inc.
4260:
4245:
4218:
4207:
4189:
4148:
4109:
4091:
4080:
4062:
4048:
4037:
4019:
4001:
3966:
3923:
3888:
3830:
3767:
3711:
3687:
3600:
3561:
3544:10.1557/PROC-1250-G14-01-H07-01
3527:
3492:
3368:
3347:
3282:
3229:
3208:
3169:
3158:from the original on 2021-12-21
3144:
3135:
924:Programmable metallization cell
4300:Hitachi/Renesas Low-Power PRAM
4267:Hruska, Joel (6 August 2014).
3109:IEEE Transactions on Magnetics
3100:
3077:
3055:10.1088/0957-4484/24/25/255201
2874:
2818:
2761:
1915:) stored within the gate of a
487:Persistence (computer science)
13:
1:
4713:Technology in science fiction
4305:Hewlett-Packard Probe Storage
2755:
2722:: Intel and Micron announced
2423:drift. The resistance of the
2367:
2253:
1672:
1355:Electronic quantum holography
2003:writes per sector, and many
1824:A 2008 advance pioneered by
1596:) with the same capability.
706:Video RAM (dual-ported DRAM)
502:Non-RAID drive architectures
7:
4252:Hruska, Joel (8 May 2014).
4121:Samsung Electronics America
2852:10.1109/JETCAS.2016.2547718
2730:
2450:
2145:so densities of more than 1
1707:crystalline filament growth
10:
4790:
4718:Technology readiness level
4654:Technological unemployment
4165:10.1109/ISSCC.2011.5746415
4117:"Page Not Found - SAMSUNG"
3299:10.1109/VLSIT.2003.1221143
2329:ST 28 nm, 16 MB array
2317:In June 2009, Samsung and
1295:Holographic Versatile Disc
1194:Compact Disc Digital Audio
1066:Magnetic-tape data storage
685:Content-addressable memory
27:Novel computer memory type
4736:
4701:Technological singularity
4661:Technological convergence
4579:
4375:
4368:
4140:Cite uses generic title (
3865:10.1109/JSSC.2022.3140414
3800:10.1038/s41565-020-0655-z
3129:10.1109/TMAG.1970.1066920
2955:10.1007/s00339-011-6264-9
2337:automotive control unit.
2216:replacement for NOR flash
2173:announced a prototype 512
1683:Energy Conversion Devices
492:Persistent data structure
387:Digital rights management
4473:Holographic data storage
3995:10.1002/pssb.19640070302
3952:10.1002/pssb.19640070202
3745:10.1109/TED.2015.2439635
3513:10.1109/TDMR.2004.836724
2795:10.1088/1361-6463/ab7794
2351:Kirchhoff's circuit laws
1367:DNA digital data storage
1350:Holographic data storage
839:Solid-state hybrid drive
125:Network-attached storage
4666:Technological evolution
4639:Exploratory engineering
4468:3D optical data storage
4401:Artificial intelligence
3975:Physica Status Solidi B
3932:Physica Status Solidi B
3903:(12): 124503–124503–6.
3378:Applied Physics Letters
3337:"A Memory Breakthrough"
3238:Applied Physics Letters
3189:: 56–60. Archived from
3154:. YouTube. 2012-06-21.
1638:to achieve non-thermal
1362:5D optical data storage
1179:3D optical data storage
902:Universal Flash Storage
307:Replication (computing)
252:Distributed file system
142:Single-instance storage
120:Direct-attached storage
100:Continuous availability
4676:Technology forecasting
4671:Technological paradigm
4644:Proactionary principle
4562:Software-defined radio
4015:on September 27, 2007.
3676:. EE Times. 2010-04-28
3662:. Samsung. 2009-06-23.
3589:. engadget. 2011-06-30
2495:publishes research in
1953:
1896:
1748:electrical resistivity
1235:Nintendo optical discs
452:Storage virtualization
322:Information repository
262:Distributed data store
4602:Disruptive innovation
4362:Emerging technologies
4231:www.theregister.co.uk
3780:Nature Nanotechnology
2903:10.1038/nnano.2011.96
2883:Nature Nanotechnology
2440:NOR flash replacement
2260:non-volatile memories
2244:Intel Developer Forum
1954:
1894:
1803:crystallization point
1799:electrical resistance
1691:Iowa State University
1679:Stanford R. Ovshinsky
1601:phase-change material
1580:the glass, making it
1542:ovonic unified memory
738:Mellon optical memory
726:Williams–Kilburn tube
442:Locality of reference
247:Clustered file system
73:Memory access pattern
4649:Technological change
4592:Collingridge dilemma
4389:Ambient intelligence
2497:Electronics Magazine
2461:chalcogenide glasses
2335:silicon on insulator
2310:Intel's 90 nm device
2165:Samsung 46.7 nm cell
1930:
1687:chalcogenide glasses
1434:Magnetic-core memory
1081:Digital Data Storage
1041:Quadruplex videotape
482:In-memory processing
372:Information transfer
267:Distributed database
130:Storage area network
110:Block (data storage)
4706:Technology scouting
4681:Accelerating change
4411:Machine translation
4325:Introduction to PCM
4127:on August 21, 2010.
3987:1964PSSBR...7..713K
3944:1964PSSBR...7..359K
3909:2007JAP...102l4503K
3856:2022IJSSC..57.1027K
3792:2020NatNa..15..529S
3737:2015ITED...62.3498B
3437:2010NanoL..10..414S
3390:2013ApPhL.103g2114Z
3260:2007ApPhL..91q1906C
3121:1970ITM.....6..592P
3037:2013Nanot..24y5201D
2946:2011ApPhA.102..765C
2895:2011NatNa...6..501S
2844:2016IJEST...6..146B
2786:2020JPhD...53u3002L
2341:In-memory computing
2230:Intel's PRAM device
2169:In September 2006,
2113:width scales down.
1983:for example (for a
1830:ST Microelectronics
1819:Samsung Electronics
1654:non-volatile-memory
1518:Phase-change memory
1031:Phonograph cylinder
969:Electrochemical RAM
821:Solid-state storage
437:Memory segmentation
135:Block-level storage
18:Phase change memory
4723:Technology roadmap
4436:Speech recognition
4421:Mobile translation
4394:Internet of things
4327:by Numonyx (video)
4201:2012-01-31 at the
4159:. pp. 500–2.
3293:. pp. 177–8.
3084:Sie, C.H. (1969).
2749:Read-mostly memory
2471:Stanford Ovshinsky
2282:in space systems.
2240:STMicroelectronics
2197:were available (64
1997:nonvolatile memory
1949:
1897:
1572:generally made of
1562:chalcogenide glass
1440:Plated-wire memory
1405:Paper data storage
1051:Magnetic recording
477:In-memory database
462:Memory-mapped file
407:Volume boot record
402:Master boot record
392:Volume (computing)
367:Data communication
292:Data deduplication
4756:
4755:
4575:
4574:
4545:Optical computing
4174:978-1-61284-303-2
4105:on 25 April 2010.
3917:10.1063/1.2825650
3731:(11): 3498–3507.
3612:SK hynix Newsroom
3575:on June 29, 2012.
3445:10.1021/nl902777z
3398:10.1063/1.4818662
3341:Technology Review
3268:10.1063/1.2801626
2934:Applied Physics A
2737:Ferroelectric RAM
2538:2003 through 2005
2421:threshold voltage
2410:activation energy
2364:technology node.
2020:thermal expansion
2005:flash controllers
1925:threshold voltage
1921:insulator "traps"
1845:Aluminum/antimony
1515:
1514:
1112:8 mm video format
1036:Phonograph record
855:Flash Core Module
833:Solid-state drive
732:Delay-line memory
691:Computational RAM
594:Scratchpad memory
432:Disk partitioning
157:Unstructured data
83:Secondary storage
16:(Redirected from
4781:
4744:
4743:
4691:Horizon scanning
4607:Ephemeralization
4523:Racetrack memory
4458:Extended reality
4453:Cybermethodology
4373:
4372:
4355:
4348:
4341:
4332:
4331:
4273:
4272:
4264:
4258:
4257:
4249:
4243:
4242:
4240:
4238:
4222:
4216:
4211:
4205:
4193:
4187:
4186:
4152:
4146:
4145:
4138:
4136:
4128:
4123:. Archived from
4113:
4107:
4106:
4095:
4089:
4084:
4078:
4077:
4066:
4060:
4059:
4052:
4046:
4041:
4035:
4034:
4023:
4017:
4016:
4011:. Archived from
4005:
3999:
3998:
3970:
3964:
3963:
3927:
3921:
3920:
3892:
3886:
3885:
3867:
3850:(4): 1027–1038.
3834:
3828:
3827:
3771:
3765:
3764:
3715:
3709:
3708:
3706:
3705:
3691:
3685:
3684:
3682:
3681:
3670:
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3656:
3650:
3649:
3647:
3646:
3631:
3622:
3621:
3619:
3618:
3604:
3598:
3597:
3595:
3594:
3583:
3577:
3576:
3571:. Archived from
3565:
3559:
3554:
3548:
3547:
3531:
3525:
3524:
3496:
3490:
3489:
3487:
3486:
3477:. Archived from
3471:
3465:
3464:
3408:
3402:
3401:
3372:
3366:
3365:
3363:
3362:
3351:
3345:
3344:
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3233:
3227:
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3224:
3223:
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3164:
3163:
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3098:
3097:
3081:
3075:
3074:
3048:
3030:
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2989:
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2981:
2980:
2965:
2959:
2958:
2957:
2929:
2923:
2922:
2878:
2872:
2871:
2822:
2816:
2815:
2797:
2765:
2286:Multi-level cell
2248:proof-of-concept
2035:reflow soldering
1958:
1956:
1955:
1950:
1948:
1947:
1946:
1805:, but below the
1768:refractive index
1719:, co-founder of
1574:titanium nitride
1566:electric current
1556:)) is a type of
1554:chalcogenide RAM
1507:
1500:
1493:
1452:Thin-film memory
1446:Core rope memory
1372:Universal memory
1335:Millipede memory
1325:Racetrack memory
1290:Ultra HD Blu-ray
1102:Linear Tape-Open
1056:Magnetic storage
1024:Analog recording
467:Software entropy
427:Disk aggregation
187:Data degradation
172:Data compression
68:Memory hierarchy
58:Memory coherence
30:
29:
21:
4789:
4788:
4784:
4783:
4782:
4780:
4779:
4778:
4769:Computer memory
4759:
4758:
4757:
4752:
4732:
4571:
4382:
4379:
4378:Information and
4364:
4359:
4281:
4276:
4265:
4261:
4250:
4246:
4236:
4234:
4223:
4219:
4212:
4208:
4203:Wayback Machine
4194:
4190:
4175:
4153:
4149:
4139:
4130:
4129:
4115:
4114:
4110:
4097:
4096:
4092:
4085:
4081:
4068:
4067:
4063:
4054:
4053:
4049:
4042:
4038:
4025:
4024:
4020:
4007:
4006:
4002:
3971:
3967:
3928:
3924:
3893:
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3835:
3831:
3772:
3768:
3716:
3712:
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3693:
3692:
3688:
3679:
3677:
3672:
3671:
3667:
3658:
3657:
3653:
3644:
3642:
3633:
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3616:
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3606:
3605:
3601:
3592:
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3585:
3584:
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3567:
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3209:
3199:
3197:
3196:on July 7, 2022
3193:
3180:
3174:
3170:
3161:
3159:
3150:
3149:
3145:
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3136:
3105:
3101:
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3046:10.1.1.745.8657
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3007:
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2986:
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2962:
2930:
2926:
2879:
2875:
2823:
2819:
2766:
2762:
2758:
2733:
2453:
2434:In April 2010,
2406:crystallization
2374:current density
2370:
2343:
2331:
2312:
2288:
2256:
2232:
2181:) device using
2167:
2139:Hewlett-Packard
2123:
1939:
1938:
1934:
1931:
1928:
1927:
1902:
1887:
1882:
1878:
1847:
1675:
1634:
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1615:
1611:
1607:
1570:heating element
1520:(also known as
1511:
1482:
1481:
1400:
1392:
1391:
1345:Patterned media
1315:
1307:
1306:
1174:
1164:
1163:
1159:Hard disk drive
1026:
1016:
1015:
996:
985:
984:
939:
929:
928:
850:IBM FlashSystem
845:USB flash drive
784:
767:
766:
721:
713:
712:
701:Dual-ported RAM
579:
562:
561:
522:Cloud computing
382:Copy protection
302:Data redundancy
232:Shared resource
202:Data validation
177:Data corruption
152:Structured data
63:Cache coherence
48:
34:Computer memory
28:
23:
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4776:
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4418:
4416:Machine vision
4413:
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4397:
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4380:communications
4376:
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4302:
4297:
4292:
4287:
4280:
4279:External links
4277:
4275:
4274:
4271:. ExtremeTech.
4259:
4256:. ExtremeTech.
4244:
4233:. The Register
4217:
4206:
4188:
4173:
4147:
4108:
4090:
4079:
4061:
4047:
4036:
4018:
4000:
3981:(3): 713–731.
3965:
3938:(2): 359–372.
3922:
3887:
3829:
3786:(7): 529–544.
3766:
3710:
3686:
3665:
3651:
3623:
3599:
3578:
3560:
3549:
3526:
3491:
3466:
3420:
3416:
3412:
3403:
3367:
3346:
3322:
3307:
3281:
3244:(17): 171906.
3228:
3207:
3168:
3143:
3134:
3099:
3076:
3021:(25): 255201.
3015:Nanotechnology
3005:
2984:
2960:
2940:(4): 765–783,
2924:
2873:
2838:(2): 146–162.
2817:
2780:(21): 213002.
2759:
2757:
2754:
2753:
2752:
2746:
2740:
2732:
2729:
2728:
2727:
2717:
2711:
2705:
2699:
2693:
2687:
2681:
2675:
2669:
2663:
2657:
2654:September 2009
2651:
2645:
2639:
2633:
2623:
2617:
2607:
2601:
2595:
2592:September 2006
2589:
2583:
2577:
2571:
2565:
2562:September 2005
2559:
2553:
2547:
2541:
2535:
2529:
2523:
2517:
2511:
2505:
2499:
2489:September 1970
2486:
2480:
2474:
2467:September 1966
2464:
2452:
2449:
2369:
2366:
2342:
2339:
2330:
2327:
2311:
2308:
2287:
2284:
2255:
2252:
2231:
2228:
2187:memory density
2166:
2163:
2122:
2121:2000 and later
2119:
2057:memory density
2039:wave soldering
1979:read time for
1945:
1942:
1937:
1917:MOS transistor
1901:
1900:PRAM vs. Flash
1898:
1885:
1880:
1876:
1846:
1843:
1839:memory density
1703:electric-field
1677:In the 1960s,
1674:
1671:
1632:
1628:
1613:
1609:
1605:
1513:
1512:
1510:
1509:
1502:
1495:
1487:
1484:
1483:
1480:
1479:
1473:
1467:
1464:Twistor memory
1461:
1455:
1449:
1443:
1437:
1431:
1425:
1420:
1414:
1408:
1401:
1398:
1397:
1394:
1393:
1390:
1389:
1384:
1382:Quantum memory
1379:
1374:
1369:
1364:
1359:
1358:
1357:
1347:
1342:
1337:
1332:
1327:
1322:
1316:
1314:In development
1313:
1312:
1309:
1308:
1305:
1304:
1299:
1298:
1297:
1292:
1287:
1282:
1277:
1272:
1267:
1262:
1257:
1252:
1247:
1242:
1237:
1232:
1227:
1225:Super Video CD
1222:
1217:
1212:
1207:
1202:
1197:
1191:
1186:
1175:
1170:
1169:
1166:
1165:
1162:
1161:
1156:
1155:
1154:
1149:
1144:
1139:
1134:
1129:
1124:
1119:
1114:
1109:
1104:
1099:
1094:
1089:
1084:
1078:
1073:
1068:
1063:
1058:
1048:
1043:
1038:
1033:
1027:
1022:
1021:
1018:
1017:
1014:
1013:
1008:
1003:
997:
991:
990:
987:
986:
983:
982:
977:
972:
966:
961:
951:
946:
940:
935:
934:
931:
930:
927:
926:
921:
920:
919:
914:
909:
904:
899:
894:
889:
884:
882:MultiMediaCard
879:
874:
869:
859:
858:
857:
852:
847:
842:
836:
830:
818:
813:
812:
811:
806:
796:
791:
785:
780:
779:
776:
775:
769:
768:
765:
764:
758:
752:
747:
744:Selectron tube
741:
735:
729:
722:
719:
718:
715:
714:
711:
710:
709:
708:
698:
693:
688:
682:
677:
672:
671:
670:
660:
659:
658:
653:
648:
643:
638:
633:
628:
623:
618:
613:
608:
598:
597:
596:
591:
584:Hardware cache
580:
575:
574:
571:
570:
564:
563:
560:
559:
554:
549:
544:
539:
537:Edge computing
534:
529:
524:
519:
517:Grid computing
514:
512:Bank switching
509:
504:
499:
494:
489:
484:
479:
474:
469:
464:
459:
457:Virtual memory
454:
449:
444:
439:
434:
429:
424:
422:Disk mirroring
419:
414:
409:
404:
399:
394:
389:
384:
379:
377:Temporary file
374:
369:
364:
359:
354:
349:
344:
339:
334:
329:
327:Knowledge base
324:
319:
317:Storage record
314:
312:Memory refresh
309:
304:
299:
297:Data structure
294:
289:
284:
279:
274:
269:
264:
259:
254:
249:
244:
239:
234:
229:
224:
219:
214:
209:
204:
199:
194:
192:Data integrity
189:
184:
182:Data cleansing
179:
174:
169:
164:
159:
154:
149:
144:
139:
138:
137:
132:
122:
117:
115:Object storage
112:
107:
102:
97:
96:
95:
85:
80:
75:
70:
65:
60:
55:
49:
46:
45:
42:
41:
26:
9:
6:
4:
3:
2:
4786:
4775:
4772:
4770:
4767:
4766:
4764:
4749:
4748:
4739:
4738:
4735:
4729:
4728:Transhumanism
4726:
4724:
4721:
4719:
4716:
4714:
4711:
4707:
4704:
4702:
4699:
4697:
4694:
4692:
4689:
4687:
4684:
4682:
4679:
4678:
4677:
4674:
4672:
4669:
4667:
4664:
4662:
4659:
4655:
4652:
4651:
4650:
4647:
4645:
4642:
4640:
4637:
4633:
4630:
4628:
4625:
4623:
4620:
4618:
4615:
4614:
4613:
4610:
4608:
4605:
4603:
4600:
4598:
4595:
4593:
4590:
4588:
4585:
4584:
4582:
4578:
4568:
4565:
4563:
4560:
4556:
4555:Chipless RFID
4553:
4552:
4551:
4548:
4546:
4543:
4539:
4536:
4534:
4531:
4529:
4526:
4524:
4521:
4519:
4516:
4514:
4511:
4509:
4506:
4504:
4501:
4499:
4496:
4494:
4491:
4489:
4486:
4485:
4483:
4481:
4478:
4474:
4471:
4469:
4466:
4465:
4464:
4461:
4459:
4456:
4454:
4451:
4449:
4446:
4444:
4441:
4437:
4434:
4432:
4429:
4427:
4424:
4422:
4419:
4417:
4414:
4412:
4409:
4407:
4404:
4403:
4402:
4399:
4395:
4392:
4391:
4390:
4387:
4386:
4384:
4381:
4374:
4371:
4367:
4363:
4356:
4351:
4349:
4344:
4342:
4337:
4336:
4333:
4326:
4323:
4321:
4318:
4316:
4313:
4311:
4308:
4306:
4303:
4301:
4298:
4296:
4293:
4291:
4288:
4286:
4283:
4282:
4270:
4263:
4255:
4248:
4232:
4228:
4221:
4215:
4210:
4204:
4200:
4197:
4192:
4184:
4180:
4176:
4170:
4166:
4162:
4158:
4151:
4143:
4134:
4126:
4122:
4118:
4112:
4104:
4100:
4094:
4088:
4083:
4075:
4074:www.intel.com
4071:
4065:
4057:
4051:
4045:
4040:
4032:
4031:Computerworld
4028:
4022:
4014:
4010:
4004:
3996:
3992:
3988:
3984:
3980:
3976:
3969:
3961:
3957:
3953:
3949:
3945:
3941:
3937:
3933:
3926:
3918:
3914:
3910:
3906:
3902:
3898:
3897:J. Appl. Phys
3891:
3883:
3879:
3875:
3871:
3866:
3861:
3857:
3853:
3849:
3845:
3841:
3833:
3825:
3821:
3817:
3813:
3809:
3805:
3801:
3797:
3793:
3789:
3785:
3781:
3777:
3770:
3762:
3758:
3754:
3750:
3746:
3742:
3738:
3734:
3730:
3726:
3722:
3714:
3700:
3696:
3690:
3675:
3669:
3661:
3655:
3641:on 2008-06-09
3640:
3636:
3630:
3628:
3613:
3609:
3603:
3588:
3582:
3574:
3570:
3564:
3558:
3553:
3545:
3541:
3537:
3530:
3522:
3518:
3514:
3510:
3506:
3502:
3495:
3481:on 2007-03-23
3480:
3476:
3470:
3462:
3458:
3454:
3450:
3446:
3442:
3438:
3434:
3430:
3426:
3407:
3399:
3395:
3391:
3387:
3384:(7): 072114.
3383:
3379:
3371:
3356:
3350:
3342:
3338:
3331:
3329:
3327:
3318:
3314:
3310:
3308:4-89114-033-X
3304:
3300:
3296:
3292:
3285:
3277:
3273:
3269:
3265:
3261:
3257:
3252:
3247:
3243:
3239:
3232:
3217:
3211:
3192:
3188:
3187:
3179:
3172:
3157:
3153:
3147:
3138:
3130:
3126:
3122:
3118:
3114:
3110:
3103:
3095:
3091:
3087:
3080:
3072:
3068:
3064:
3060:
3056:
3052:
3047:
3042:
3038:
3034:
3029:
3024:
3020:
3016:
3009:
3000:
2995:
2988:
2975:
2971:
2964:
2956:
2951:
2947:
2943:
2939:
2935:
2928:
2920:
2916:
2912:
2908:
2904:
2900:
2896:
2892:
2888:
2884:
2877:
2869:
2865:
2861:
2857:
2853:
2849:
2845:
2841:
2837:
2833:
2829:
2821:
2813:
2809:
2805:
2801:
2796:
2791:
2787:
2783:
2779:
2775:
2771:
2764:
2760:
2750:
2747:
2744:
2741:
2738:
2735:
2734:
2725:
2721:
2718:
2715:
2712:
2709:
2706:
2703:
2700:
2697:
2694:
2691:
2690:February 2012
2688:
2685:
2684:February 2011
2682:
2679:
2676:
2673:
2670:
2667:
2666:December 2009
2664:
2661:
2658:
2655:
2652:
2649:
2646:
2643:
2642:December 2008
2640:
2637:
2636:February 2008
2634:
2631:
2627:
2624:
2621:
2618:
2615:
2611:
2608:
2605:
2604:December 2006
2602:
2599:
2596:
2593:
2590:
2587:
2584:
2581:
2580:December 2005
2578:
2575:
2574:December 2005
2572:
2569:
2566:
2563:
2560:
2557:
2556:February 2005
2554:
2551:
2548:
2545:
2542:
2539:
2536:
2533:
2530:
2527:
2524:
2521:
2520:December 2000
2518:
2515:
2514:February 2000
2512:
2509:
2508:November 1999
2506:
2503:
2500:
2498:
2494:
2490:
2487:
2484:
2481:
2478:
2475:
2472:
2468:
2465:
2462:
2458:
2455:
2454:
2448:
2446:
2445:p–n junctions
2441:
2437:
2432:
2430:
2426:
2422:
2418:
2413:
2411:
2407:
2401:
2399:
2395:
2391:
2387:
2383:
2379:
2375:
2365:
2363:
2359:
2356:
2355:deep learning
2352:
2348:
2338:
2336:
2326:
2322:
2320:
2315:
2307:
2305:
2301:
2297:
2293:
2283:
2281:
2277:
2273:
2269:
2265:
2261:
2251:
2249:
2245:
2241:
2237:
2227:
2225:
2221:
2217:
2212:
2208:
2204:
2200:
2196:
2192:
2188:
2184:
2180:
2176:
2172:
2162:
2160:
2156:
2152:
2148:
2144:
2140:
2136:
2132:
2128:
2118:
2116:
2112:
2108:
2104:
2100:
2096:
2092:
2088:
2084:
2080:
2076:
2071:
2069:
2064:
2062:
2058:
2053:
2051:
2046:
2044:
2040:
2036:
2032:
2028:
2023:
2021:
2018:
2012:
2010:
2009:wear leveling
2006:
2000:
1998:
1994:
1988:
1986:
1982:
1978:
1974:
1970:
1966:
1962:
1935:
1926:
1922:
1918:
1914:
1909:
1907:
1893:
1889:
1883:
1872:
1868:
1864:
1860:
1856:
1852:
1842:
1840:
1836:
1831:
1827:
1822:
1820:
1816:
1812:
1808:
1807:melting point
1804:
1800:
1796:
1795:stoichiometry
1792:
1788:
1784:
1780:
1776:
1771:
1769:
1765:
1761:
1757:
1756:optical media
1753:
1749:
1745:
1741:
1736:
1734:
1730:
1726:
1722:
1718:
1714:
1713:
1708:
1704:
1700:
1696:
1692:
1688:
1684:
1680:
1670:
1667:
1663:
1662:Stan Williams
1659:
1655:
1651:
1647:
1645:
1641:
1640:phase changes
1637:
1627:
1623:
1620:
1616:
1602:
1597:
1595:
1591:
1587:
1583:
1579:
1575:
1571:
1567:
1563:
1559:
1555:
1551:
1547:
1543:
1539:
1535:
1531:
1527:
1523:
1519:
1508:
1503:
1501:
1496:
1494:
1489:
1488:
1486:
1485:
1477:
1474:
1471:
1470:Bubble memory
1468:
1465:
1462:
1459:
1456:
1453:
1450:
1447:
1444:
1441:
1438:
1435:
1432:
1429:
1426:
1424:
1421:
1418:
1415:
1412:
1409:
1406:
1403:
1402:
1396:
1395:
1388:
1385:
1383:
1380:
1378:
1375:
1373:
1370:
1368:
1365:
1363:
1360:
1356:
1353:
1352:
1351:
1348:
1346:
1343:
1341:
1338:
1336:
1333:
1331:
1328:
1326:
1323:
1321:
1318:
1317:
1311:
1310:
1303:
1300:
1296:
1293:
1291:
1288:
1286:
1283:
1281:
1278:
1276:
1273:
1271:
1268:
1266:
1263:
1261:
1258:
1256:
1253:
1251:
1248:
1246:
1243:
1241:
1238:
1236:
1233:
1231:
1228:
1226:
1223:
1221:
1218:
1216:
1213:
1211:
1208:
1206:
1203:
1201:
1198:
1195:
1192:
1190:
1187:
1185:
1182:
1181:
1180:
1177:
1176:
1173:
1168:
1167:
1160:
1157:
1153:
1150:
1148:
1145:
1143:
1140:
1138:
1135:
1133:
1130:
1128:
1125:
1123:
1120:
1118:
1115:
1113:
1110:
1108:
1105:
1103:
1100:
1098:
1097:Cassette tape
1095:
1093:
1092:Videocassette
1090:
1088:
1085:
1082:
1079:
1077:
1074:
1072:
1069:
1067:
1064:
1062:
1061:Magnetic tape
1059:
1057:
1054:
1053:
1052:
1049:
1047:
1044:
1042:
1039:
1037:
1034:
1032:
1029:
1028:
1025:
1020:
1019:
1012:
1009:
1007:
1004:
1002:
999:
998:
995:
989:
988:
981:
978:
976:
973:
970:
967:
965:
962:
959:
955:
952:
950:
947:
945:
942:
941:
938:
933:
932:
925:
922:
918:
915:
913:
910:
908:
905:
903:
900:
898:
895:
893:
890:
888:
885:
883:
880:
878:
875:
873:
870:
868:
865:
864:
863:
860:
856:
853:
851:
848:
846:
843:
840:
837:
834:
831:
828:
825:
824:
822:
819:
817:
816:ROM cartridge
814:
810:
807:
805:
802:
801:
800:
797:
795:
792:
790:
787:
786:
783:
778:
777:
774:
771:
770:
762:
759:
756:
753:
751:
748:
745:
742:
739:
736:
733:
730:
727:
724:
723:
717:
716:
707:
704:
703:
702:
699:
697:
694:
692:
689:
686:
683:
681:
678:
676:
673:
669:
666:
665:
664:
661:
657:
654:
652:
649:
647:
644:
642:
639:
637:
634:
632:
629:
627:
624:
622:
619:
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569:
566:
565:
558:
555:
553:
550:
548:
545:
543:
542:Dew computing
540:
538:
535:
533:
532:Fog computing
530:
528:
527:Cloud storage
525:
523:
520:
518:
515:
513:
510:
508:
507:Memory paging
505:
503:
500:
498:
495:
493:
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483:
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478:
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375:
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365:
363:
360:
358:
355:
353:
350:
348:
345:
343:
342:File deletion
340:
338:
335:
333:
332:Computer file
330:
328:
325:
323:
320:
318:
315:
313:
310:
308:
305:
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230:
228:
225:
223:
220:
218:
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213:
212:Data recovery
210:
208:
205:
203:
200:
198:
197:Data security
195:
193:
190:
188:
185:
183:
180:
178:
175:
173:
170:
168:
165:
163:
160:
158:
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136:
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128:
127:
126:
123:
121:
118:
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113:
111:
108:
106:
103:
101:
98:
94:
93:floating-gate
91:
90:
89:
86:
84:
81:
79:
76:
74:
71:
69:
66:
64:
61:
59:
56:
54:
51:
50:
44:
43:
39:
35:
32:
31:
19:
4745:
4632:Robot ethics
4517:
4431:Semantic Web
4290:Ovonyx, Inc.
4262:
4247:
4235:. Retrieved
4230:
4220:
4209:
4191:
4156:
4150:
4125:the original
4120:
4111:
4103:the original
4093:
4082:
4073:
4064:
4050:
4039:
4030:
4021:
4013:the original
4003:
3978:
3974:
3968:
3935:
3931:
3925:
3900:
3896:
3890:
3847:
3843:
3832:
3783:
3779:
3769:
3728:
3724:
3713:
3702:. Retrieved
3698:
3689:
3678:. Retrieved
3668:
3654:
3643:. Retrieved
3639:the original
3615:. Retrieved
3611:
3602:
3591:. Retrieved
3581:
3573:the original
3563:
3552:
3535:
3529:
3507:(3): 422–7.
3504:
3500:
3494:
3483:. Retrieved
3479:the original
3469:
3431:(2): 414–9.
3428:
3425:Nano Letters
3424:
3406:
3381:
3377:
3370:
3359:. Retrieved
3357:. KurzweilAI
3349:
3340:
3319:. 03CH37407.
3290:
3284:
3241:
3237:
3231:
3220:. Retrieved
3210:
3198:. Retrieved
3191:the original
3184:
3171:
3160:. Retrieved
3146:
3137:
3112:
3108:
3102:
3089:
3085:
3079:
3018:
3014:
3008:
2987:
2977:, retrieved
2974:The Register
2973:
2963:
2937:
2933:
2927:
2889:(8): 501–5.
2886:
2882:
2876:
2835:
2831:
2820:
2777:
2773:
2763:
2719:
2713:
2707:
2702:January 2014
2701:
2695:
2689:
2683:
2677:
2671:
2665:
2660:October 2009
2659:
2653:
2647:
2641:
2635:
2626:October 2007
2625:
2619:
2610:January 2007
2609:
2603:
2598:October 2006
2597:
2591:
2585:
2579:
2573:
2568:October 2005
2567:
2561:
2555:
2549:
2543:
2537:
2531:
2525:
2519:
2513:
2507:
2501:
2493:Gordon Moore
2488:
2482:
2477:January 1969
2476:
2466:
2457:January 1955
2456:
2433:
2414:
2402:
2371:
2344:
2332:
2323:
2319:Numonyx B.V.
2316:
2313:
2289:
2257:
2233:
2194:
2168:
2161:technology.
2135:chalcogenide
2124:
2111:p-n junction
2099:reverse bias
2095:forward bias
2091:Chalcogenide
2072:
2065:
2054:
2047:
2024:
2013:
2001:
1989:
1910:
1906:flash memory
1903:
1848:
1823:
1789:(Te) called
1775:chalcogenide
1772:
1737:
1717:Gordon Moore
1710:
1697:film with a
1695:chalcogenide
1676:
1648:
1636:superlattice
1598:
1594:flash memory
1553:
1549:
1545:
1541:
1537:
1533:
1529:
1525:
1521:
1517:
1516:
1417:Punched tape
1411:Punched card
1377:Time crystal
1245:Hyper CD-ROM
1184:Optical disc
1076:Tape library
1011:FeFET memory
992:Early-stage
953:
872:CompactFlash
867:Memory Stick
827:Flash memory
789:Diode matrix
773:Non-volatile
557:Kryder's law
547:Amdahl's law
472:Software rot
447:Logical disk
347:File copying
282:Data storage
237:File sharing
222:Data cluster
38:data storage
4696:Moore's law
4627:Neuroethics
4622:Cyberethics
4443:Atomtronics
3218:. Techworld
3186:Electronics
2714:August 2014
2550:August 2004
2544:August 2004
2300:crystalline
2264:BAE Systems
2131:solid state
2050:resistivity
1993:hard drives
1969:charge pump
1837:, doubling
1793:(GST). The
1740:crystalline
1733:lithography
1712:Electronics
1586:crystalline
1476:Floppy disk
1428:Drum memory
862:Memory card
829:is used in:
763:(2002–2010)
728:(1946–1947)
552:Moore's law
397:Boot sector
337:Object file
242:File system
53:Memory cell
4763:Categories
4587:Automation
4237:14 January
3704:2022-07-08
3699:www.st.com
3680:2010-05-03
3645:2008-08-15
3617:2022-02-05
3593:2011-06-30
3485:2007-06-30
3361:2013-09-17
3222:2010-02-04
3162:2013-09-17
3115:(3): 592.
2979:2012-03-07
2756:References
2678:April 2010
2672:April 2010
2620:April 2007
2526:March 2002
2417:resistance
2390:dielectric
2382:transistor
2368:Challenges
2298:and fully
2254:BAE device
2147: Tbit
2103:transistor
1863:chalcogens
1673:Background
1658:memristors
1568:through a
1399:Historical
1071:Tape drive
897:SmartMedia
720:Historical
417:Disk image
412:Disk array
287:Data store
88:MOS memory
78:Memory map
4617:Bioethics
4503:Millipede
4183:206996875
3960:222432031
3882:246417395
3874:1558-173X
3824:214704544
3808:1748-3395
3753:0018-9383
3276:119628572
3251:0708.1302
3200:April 22,
3041:CiteSeerX
3028:1302.7063
2999:1207.7319
2860:2156-3357
2812:213023359
2804:0022-3727
2724:3D Xpoint
2720:July 2015
2696:July 2012
2648:June 2009
2586:July 2006
2532:July 2003
2502:June 1999
2483:June 1969
2429:power law
2425:amorphous
2358:inference
2296:amorphous
2224:NOR flash
2159:Millipede
2115:Thin film
2068:radiation
2043:lead-free
1913:electrons
1859:tellurium
1851:germanium
1787:tellurium
1785:(Sb) and
1779:germanium
1777:alloy of
1758:(such as
1744:amorphous
1735:shrinks.
1705:-induced
1650:Leon Chua
1582:amorphous
1458:Disk pack
1423:Plugboard
1260:DVD-Video
1189:LaserDisc
1087:Videotape
958:3D XPoint
949:Memristor
589:CPU cache
357:Core dump
277:Data bank
227:Directory
4538:UltraRAM
4199:Archived
4133:cite web
3816:32231270
3521:22178768
3453:20041706
3317:40051862
3156:Archived
3071:14892809
3063:23708238
2911:21725305
2868:26729693
2731:See also
2708:May 2014
2451:Timeline
2398:adhesion
2304:SK Hynix
2268:rad-hard
2203: GB
2199: Gb
2195:capacity
2179: MB
2175: Mb
2151: GB
2143: nm
2027:soldered
2007:perform
1977: ns
1973: μs
1867:aluminum
1855:antimony
1811: ns
1783:antimony
1387:UltraRAM
1265:DVD card
1220:Video CD
1205:CD Video
975:Nano-RAM
944:Memistor
917:XQD card
892:SIM card
750:Dekatron
636:XDR DRAM
631:EDO DRAM
568:Volatile
362:Hex dump
272:Database
167:Metadata
162:Big data
4484:Memory
3983:Bibcode
3940:Bibcode
3905:Bibcode
3852:Bibcode
3788:Bibcode
3761:5243635
3733:Bibcode
3461:9585187
3433:Bibcode
3386:Bibcode
3256:Bibcode
3117:Bibcode
3033:Bibcode
2942:Bibcode
2919:6684244
2891:Bibcode
2840:Bibcode
2782:Bibcode
2614:Qimonda
2436:Numonyx
2394:current
2378: A
2376:(>10
2280:EEPROMs
2272:latchup
2171:Samsung
2109:as the
2107:dopants
2087:current
2083:MOSFETs
2029:onto a
1965:voltage
1666:HP Labs
1472:(~1970)
1466:(~1968)
1448:(1960s)
1285:Blu-ray
1275:MiniDVD
1270:DVD-RAM
1230:Mini CD
1172:Optical
1132:U-matic
1127:MicroMV
1107:Betamax
971:(ECRAM)
912:MicroP2
887:SD card
877:PC Card
668:1T-SRAM
626:QDRSRAM
217:Storage
47:General
4612:Ethics
4580:Topics
4369:Fields
4285:Micron
4181:
4171:
3958:
3880:
3872:
3822:
3814:
3806:
3759:
3751:
3519:
3459:
3451:
3315:
3305:
3274:
3069:
3061:
3043:
2917:
2909:
2866:
2858:
2810:
2802:
2745:(MRAM)
2739:(FRAM)
2270:) and
2201:, or 8
2075:diodes
1871:GeSbTe
1791:GeSbTe
1781:(Ge),
1764:DVD-RW
1752:binary
1578:quench
1544:) and
1478:(1971)
1460:(1962)
1454:(1962)
1442:(1957)
1436:(1949)
1430:(1932)
1419:(1725)
1413:(1725)
1407:(1725)
1280:HD DVD
1240:CD-ROM
1196:(CDDA)
1122:MiniDV
841:(SSHD)
823:(SSS)
809:EEPROM
757:(2009)
746:(1952)
740:(1951)
734:(1947)
352:Backup
4533:SONOS
4493:ECRAM
4488:CBRAM
4480:GPGPU
4179:S2CID
3956:S2CID
3878:S2CID
3820:S2CID
3757:S2CID
3517:S2CID
3457:S2CID
3313:S2CID
3272:S2CID
3246:arXiv
3194:(PDF)
3181:(PDF)
3067:S2CID
3023:arXiv
2994:arXiv
2915:S2CID
2864:S2CID
2808:S2CID
2751:(RMM)
2630:Hynix
2386:diode
2276:PROMs
2236:Intel
2211:FeRAM
2191:flash
2183:diode
2061:Intel
2031:board
1826:Intel
1760:CD-RW
1725:flash
1721:Intel
1699:diode
1644:laser
1546:C-RAM
1534:PCRAM
1340:ECRAM
1320:CBRAM
1255:DVD+R
1215:CD-RW
1152:D-VHS
1147:VHS-C
1142:S-VHS
1083:(DDS)
1006:ReRAM
1001:FeRAM
994:NVRAM
980:CBRAM
937:NVRAM
835:(SSD)
804:EPROM
761:Z-RAM
755:T-RAM
687:(CAM)
675:ReRAM
641:RDRAM
621:LPDDR
616:SGRAM
611:SDRAM
606:eDRAM
40:types
4747:List
4550:RFID
4528:RRAM
4518:PRAM
4513:NRAM
4508:MRAM
4498:FRAM
4239:2014
4169:ISBN
4142:help
3870:ISSN
3812:PMID
3804:ISSN
3749:ISSN
3449:PMID
3303:ISBN
3202:2022
3059:PMID
2907:PMID
2856:ISSN
2800:ISSN
2419:and
2362:CMOS
2278:and
2238:and
2220:NAND
2209:and
2207:MRAM
2149:(125
2127:MEMS
2081:and
2079:BJTs
1985:byte
1981:SRAM
1857:and
1835:bits
1828:and
1815:DRAM
1762:and
1742:and
1738:The
1729:DRAM
1727:and
1590:bits
1550:CRAM
1530:PRAM
1526:PCME
1330:NRAM
1302:WORM
1210:CD-R
964:MRAM
799:PROM
794:MROM
696:VRAM
680:QRAM
663:SRAM
651:GDDR
601:DRAM
497:RAID
147:Data
36:and
4161:doi
3991:doi
3948:doi
3913:doi
3901:102
3860:doi
3796:doi
3741:doi
3540:doi
3509:doi
3441:doi
3423:".
3394:doi
3382:103
3295:doi
3264:doi
3125:doi
3051:doi
2950:doi
2938:102
2899:doi
2848:doi
2790:doi
2384:or
2292:MLC
2177:(64
2157:'s
2155:IBM
2037:or
2017:GST
1987:).
1961:bit
1681:of
1664:of
1548:or
1538:OUM
1522:PCM
1250:DVD
1137:VHS
954:PCM
907:SxS
782:ROM
656:HBM
646:DDR
577:RAM
4765::
4229:.
4177:.
4167:.
4137::
4135:}}
4131:{{
4119:.
4072:.
4029:.
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3626:^
3610:.
3515:.
3503:.
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1881:50
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1877:50
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1873:.
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1841:.
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1660:.
1631:Te
1626:Sb
1622:Te
1619:Ge
1612:Te
1608:Sb
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1528:,
1524:,
1200:CD
1117:DV
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1941:t
1936:V
1886:2
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1629:2
1624:–
1614:5
1610:2
1606:2
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1540:(
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1499:t
1492:v
960:)
956:(
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