Flash memory - Knowledge

2304:(10 million volts per centimeter) experienced by the oxide. Such high voltage densities can break atomic bonds over time in the relatively thin oxide, gradually degrading its electrically insulating properties and allowing electrons to be trapped in and pass through freely (leak) from the floating gate into the oxide, increasing the likelihood of data loss since the electrons (the quantity of which is used to represent different charge levels, each assigned to a different combination of bits in MLC Flash) are normally in the floating gate. This is why data retention goes down and the risk of data loss increases with increasing degradation. The silicon oxide in a cell degrades with every erase operation. The degradation increases the amount of negative charge in the cell over time due to trapped electrons in the oxide and negates some of the control gate voltage, this over time also makes erasing the cell slower, so to maintain the performance and reliability of the NAND chip, the cell must be retired from use. Endurance also decreases with the number of bits in a cell. With more bits in a cell, the number of possible states (each represented by a different voltage level) in a cell increases and is more sensitive to the voltages used for programming. Voltages may be adjusted to compensate for degradation of the silicon oxide, and as the number of bits increases, the number of possible states also increases and thus the cell is less tolerant of adjustments to programming voltages, because there is less space between the voltage levels that define each state in a cell. 2428:(FN tunneling). This is known as Negative gate source source erase. Newer NOR memories can erase using negative gate channel erase, which biases the wordline on a NOR memory cell block and the P-well of the memory cell block to allow FN tunneling to be carried out, erasing the cell block. Older memories used source erase, in which a high voltage was applied to the source and then electrons from the FG were moved to the source. Modern NOR flash memory chips are divided into erase segments (often called blocks or sectors). The erase operation can be performed only on a block-wise basis; all the cells in an erase segment must be erased together. Programming of NOR cells, however, generally can be performed one byte or word at a time. 2527:

programmed in one pass to a page in a block that was erased. The programming process is set one or more cells from 1 to 0. Any cells that have been set to 0 by programming can only be reset to 1 by erasing the entire block. This means that before new data can be programmed into a page that already contains data, the current contents of the page plus the new data must be copied to a new, erased page. If a suitable erased page is available, the data can be written to it immediately. If no erased page is available, a block must be erased before copying the data to a page in that block. The old page is then marked as invalid and is available for erasing and reuse. This is different from operating system

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used a flash chip with "onboard heaters that could anneal small groups of memory cells." The built-in thermal annealing was to replace the usual erase cycle with a local high temperature process that not only erased the stored charge, but also repaired the electron-induced stress in the chip, giving write cycles of at least 100 million. The result was to be a chip that could be erased and rewritten over and over, even when it should theoretically break down. As promising as Macronix's breakthrough might have been for the mobile industry, however, there were no plans for a commercial product featuring this capability to be released any time in the near future.

2839: 2224:(MOSFET) except that the transistor has two gates instead of one. The cells can be seen as an electrical switch in which current flows between two terminals (source and drain) and is controlled by a floating gate (FG) and a control gate (CG). The CG is similar to the gate in other MOS transistors, but below this, there is the FG insulated all around by an oxide layer. The FG is interposed between the CG and the MOSFET channel. Because the FG is electrically isolated by its insulating layer, electrons placed on it are trapped. When the FG is charged with electrons, this charge 2523:

string typically consists of 32 to 128 NAND cells. Strings are organised into pages which are then organised into blocks in which each string is connected to a separate line called a bitline. All cells with the same position in the string are connected through the control gates by a wordline. A plane contains a certain number of blocks that are connected through the same bitline. A flash die consists of one or more planes, and the peripheral circuitry that is needed to perform all the read, write, and erase operations.

3138:, 90 nm, or 65 nm). NAND flash's designers realized that the area of a NAND chip, and thus the cost, could be further reduced by removing the external address and data bus circuitry. Instead, external devices could communicate with NAND flash via sequential-accessed command and data registers, which would internally retrieve and output the necessary data. This design choice made random-access of NAND flash memory impossible, but the goal of NAND flash was to replace mechanical 2699: 2634: 2767:

continually from one cell, that cell will not fail but rather one of the surrounding cells will on a subsequent read. To avoid the read disturb problem the flash controller will typically count the total number of reads to a block since the last erase. When the count exceeds a target limit, the affected block is copied over to a new block, erased, then released to the block pool. The original block is as good as new after the erase. If the flash controller does not intervene in time, however, a

2850:(XIP) memory, meaning that programs stored in NOR flash can be executed directly from the NOR flash without needing to be copied into RAM first. NOR flash may be programmed in a random-access manner similar to reading. Programming changes bits from a logical one to a zero. Bits that are already zero are left unchanged. Erasure must happen a block at a time, and resets all the bits in the erased block back to one. Typical block sizes are 64, 128, or 256 2544: 2432: 2172: 14923: 3790: 2381: 2360: 3821:) cycles, but this seems to be currently under control since warranties on flash-based SSDs are approaching those of current hard drives. In addition, deleted files on SSDs can remain for an indefinite period of time before being overwritten by fresh data; erasure or shred techniques or software that work well on magnetic hard disk drives have no effect on SSDs, compromising security and forensic examination. However, due to the so-called 2322:, and it fundamentally changes the characteristics of the cell by increasing the MOSFET's threshold voltage. This, in turn, changes the drain-source current that flows through the transistor for a given gate voltage, which is ultimately used to encode a binary value. The Fowler-Nordheim tunneling effect is reversible, so electrons can be added to or removed from the floating gate, processes traditionally known as writing and erasing. 47: 2389: 2938:. When a logical block is accessed by high-level software, it is mapped to a physical block by the device driver or controller. A number of blocks on the flash chip may be set aside for storing mapping tables to deal with bad blocks, or the system may simply check each block at power-up to create a bad block map in RAM. The overall memory capacity gradually shrinks as more blocks are marked as bad. 2145:

increase in the number of planes or sections a flash memory chip has, increasing from 2 planes to 4, without increasing the area dedicated to the control or periphery circuitry. This increases the number of IO operations per flash chip or die, but it also introduces challenges when building capacitors for charge pumps used to write to the flash memory. Some flash dies have as many as 6 planes.

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NAND memories use a conventional charge trap structure, due to the dissolution of the partnership between Micron and Intel. Charge trap 3D NAND flash is thinner than floating gate 3D NAND. In floating gate 3D NAND, the memory cells are completely separated from one another, whereas in charge trap 3D NAND, vertical groups of memory cells share the same silicon nitride material.

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the serial-linked groups in which conventional NAND flash memory is configured. There is also string stacking, which builds several 3D NAND memory arrays or "plugs" separately, but stacked together to create a product with a higher number of 3D NAND layers on a single die. Often, two or 3 arrays are stacked. The misalignment between plugs is in the order of 30 to 10nm.

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electrons become more excited with increasing temperatures. CTF technology however still uses a tunneling oxide and blocking layer which are the weak points of the technology, since they can still be damaged in the usual ways (the tunnel oxide can be degraded due to extremely high electric fields and the blocking layer due to Anode Hot Hole Injection (AHHI).

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changed back to 1. In other words, flash memory (specifically NOR flash) offers random-access read and programming operations but does not offer arbitrary random-access rewrite or erase operations. A location can, however, be rewritten as long as the new value's 0 bits are a superset of the over-written values. For example, a

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for flash and vice versa). Once it is decided to read the firmware in as one big block it is common to add compression to allow a smaller flash chip to be used. Since 2005, many devices use serial NOR flash to deprecate parallel NOR flash for firmware storage. Typical applications for serial NOR flash include storing firmware for

2040:(CTF) technology replaces the polysilicon floating gate, which is sandwiched between a blocking gate oxide above and a tunneling oxide below it, with an electrically insulating silicon nitride layer; the silicon nitride layer traps electrons. In theory, CTF is less prone to electron leakage, providing improved data retention. 8319: 9451:. NASA Electronic Parts and Packaging Program (NEPP). 2001. "... internal transistors used for the charge pump and erase/write control have much thicker oxides because of the requirement for high voltage. This causes flash devices to be considerably more sensitive to total dose damage compared to other 9455:

technologies. It also implies that write and erase functions will be the first parameters to fail from total dose. ... Flash memories will work at much higher radiation levels in the read mode. ... The charge pumps that are required to generate the high voltage for erasing and writing are usually the

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transistors in a CMOS NOR gate. In NAND flash, cells are connected in series, resembling a CMOS NAND gate. The series connections consume less space than parallel ones, reducing the cost of NAND flash. It does not, by itself, prevent NAND cells from being read and programmed individually.

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The wafer cost of a 3D NAND is comparable with scaled down (32 nm or less) planar NAND flash. However, with planar NAND scaling stopping at 16 nm, the cost per bit reduction can continue by 3D NAND starting with 16 layers. However, due to the non-vertical sidewall of the hole etched through

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As of 2013, V-NAND flash architecture allows read and write operations twice as fast as conventional NAND and can last up to 10 times as long, while consuming 50 percent less power. They offer comparable physical bit density using 10-nm lithography but may be able to increase bit density by up to two

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film. Such a film is more robust against point defects and can be made thicker to hold larger numbers of electrons. V-NAND wraps a planar charge trap cell into a cylindrical form. As of 2020, 3D NAND flash memories by Micron and Intel instead use floating gates, however, Micron 128 layer and above 3D

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Compared to NOR flash, replacing single transistors with serial-linked groups adds an extra level of addressing. Whereas NOR flash might address memory by page then word, NAND flash might address it by page, word and bit. Bit-level addressing suits bit-serial applications (such as hard disk

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In 2016, Micron and Intel introduced a technology known as CMOS Under the Array/CMOS Under Array (CUA), Core over Periphery (COP), Periphery Under Cell (PUA), or Xtacking, in which the control circuitry for the flash memory is placed under or above the flash memory cell array. This has allowed for an

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Kim, Chulbum; Cho, Ji-Ho; Jeong, Woopyo; Park, Il-han; Park, Hyun-Wook; Kim, Doo-Hyun; Kang, Daewoon; Lee, Sunghoon; Lee, Ji-Sang; Kim, Wontae; Park, Jiyoon; Ahn, Yang-lo; Lee, Jiyoung; Lee, Jong-Hoon; Kim, Seungbum; Yoon, Hyun-Jun; Yu, Jaedoeg; Choi, Nayoung; Kwon, Yelim; Kim, Nahyun; Jang, Hwajun;

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may be stored in a serial flash chip, and then copied into SDRAM or SRAM when the device is powered-up. Using an external serial flash device rather than on-chip flash removes the need for significant process compromise (a manufacturing process that is good for high-speed logic is generally not good

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NAND relies on ECC to compensate for bits that may spontaneously fail during normal device operation. A typical ECC will correct a one-bit error in each 2048 bits (256 bytes) using 22 bits of ECC, or a one-bit error in each 4096 bits (512 bytes) using 24 bits of ECC. If

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Besides its use as random-access ROM, NOR flash can also be used as a storage device, by taking advantage of random-access programming. Some devices offer read-while-write functionality so that code continues to execute even while a program or erase operation is occurring in the background. For

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management (BBM). For portable consumer devices, these wear out management techniques typically extend the life of the flash memory beyond the life of the device itself, and some data loss may be acceptable in these applications. For high-reliability data storage, however, it is not advisable to use

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value may be erased to 1111, then written as 1110. Successive writes to that nibble can change it to 1010, then 0010, and finally 0000. Essentially, erasure sets all bits to 1, and programming can only clear bits to 0. Some file systems designed for flash devices make use of this rewrite capability,

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Memory cells in different vertical layers do not interfere with each other, as the charges cannot move vertically through the silicon nitride storage medium, and the electric fields associated with the gates are closely confined within each layer. The vertical collection is electrically identical to

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An individual memory cell is made up of one planar polysilicon layer containing a hole filled by multiple concentric vertical cylinders. The hole's polysilicon surface acts as the gate electrode. The outermost silicon dioxide cylinder acts as the gate dielectric, enclosing a silicon nitride cylinder

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A single-level NOR flash cell in its default state is logically equivalent to a binary "1" value, because current will flow through the channel under application of an appropriate voltage to the control gate, so that the bitline voltage is pulled down. A NOR flash cell can be programmed, or set

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Floating gate MOSFETs are so named because there is an electrically insulating tunnel oxide layer between the floating gate and the silicon, so the gate "floats" above the silicon. The oxide keeps the electrons confined to the floating gate. Degradation or wear (and the limited endurance of floating

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block-wise basis, with typical block sizes of hundreds to thousands of bits. This makes NAND flash unsuitable as a drop-in replacement for program ROM, since most microprocessors and microcontrollers require byte-level random access. In this regard, NAND flash is similar to other secondary

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and others at Intel. This led to Masuoka's invention of flash memory at Toshiba in 1980. The improvement between EEPROM and flash being that flash is programmed in blocks while EEPROM is programmed in bytes. According to Toshiba, the name "flash" was suggested by Masuoka's colleague, Shōji Ariizumi,

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Because erase cycles are slow, the large block sizes used in flash memory erasing give it a significant speed advantage over non-flash EEPROM when writing large amounts of data. As of 2019, flash memory costs greatly less than byte-programmable EEPROM and had become the dominant memory type wherever

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In July 2016, Samsung announced the 4 TB Samsung 850 EVO which utilizes their 256 Gbit 48-layer TLC 3D V-NAND. In August 2016, Samsung announced a 32 TB 2.5-inch SAS SSD based on their 512 Gbit 64-layer TLC 3D V-NAND. Further, Samsung expects to unveil SSDs with up to

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The architecture of NAND flash means that data can be read and programmed (written) in pages, typically between 4 KiB and 16 KiB in size, but can only be erased at the level of entire blocks consisting of multiple pages. When a block is erased, all the cells are logically set to 1. Data can only be

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feature size of flash memory cells reaches the 15–16 nm minimum limit, further flash density increases will be driven by TLC (3 bits/cell) combined with vertical stacking of NAND memory planes. The decrease in endurance and increase in uncorrectable bit error rates that accompany feature

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Flash memory devices are typically much faster at reading than writing. Performance also depends on the quality of storage controllers, which become more critical when devices are partially full. Even when the only change to manufacturing is die-shrink, the absence of an appropriate controller can

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Modern NAND flash may have erase block size between 1 MiB to 128 MiB. While reading and programming is performed on a page basis, erasure can only be performed on a block basis. Because change a cell from 0 to 1 needs to erase entire block, not just modify some pages, so modify the data of a block

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Because CTF replaces the polysilicon with an electrically insulating nitride, it allows for smaller cells and higher endurance (lower degradation or wear). However, electrons can become trapped and accumulate in the nitride, leading to degradation. Leakage is exacerbated at high temperatures since

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The write endurance of SLC floating-gate NOR flash is typically equal to or greater than that of NAND flash, while MLC NOR and NAND flash have similar endurance capabilities. Examples of endurance cycle ratings listed in datasheets for NAND and NOR flash, as well as in storage

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In December 2012, Taiwanese engineers from Macronix revealed their intention to announce at the 2012 IEEE International Electron Devices Meeting that they had figured out how to improve NAND flash storage read/write cycles from 10,000 to 100 million cycles using a "self-healing" process that

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One limitation of flash memory is that it can be erased only a block at a time. This generally sets all bits in the block to 1. Starting with a freshly erased block, any location within that block can be programmed. However, once a bit has been set to 0, only by erasing the entire block can it be

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NAND flash has reduced erase and write times, and requires less chip area per cell, thus allowing greater storage density and lower cost per bit than NOR flash. However, the I/O interface of NAND flash does not provide a random-access external address bus. Rather, data must be read on a

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NOR flash is known for its direct random access capabilities, making it apt for executing code directly. Its architecture allows for individual byte access, facilitating faster read speeds compared to NAND flash. NAND flash memory operates with a different architecture, relying on a serial access

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Because of the particular characteristics of flash memory, it is best used with either a controller to perform wear leveling and error correction or specifically designed flash file systems, which spread writes over the media and deal with the long erase times of NOR flash blocks. The basic

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The method used to read NAND flash memory can cause nearby cells in the same memory block to change over time (become programmed). This is known as read disturb. The threshold number of reads is generally in the hundreds of thousands of reads between intervening erase operations. If reading

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when one of the word lines (connected to the cell's CG) is brought high, the corresponding storage transistor acts to pull the output bit line low. NOR flash continues to be the technology of choice for embedded applications requiring a discrete non-volatile memory device. The low read latencies

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The primary differentiator lies in their use cases and internal structures. NOR flash is optimal for applications requiring quick access to individual bytes, like in embedded systems for program execution. NAND flash, on the other hand, shines in scenarios demanding cost-effective, high-capacity

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One source states that, in 2008, the flash memory industry includes about US$ 9.1 billion in production and sales. Other sources put the flash memory market at a size of more than US$ 20 billion in 2006, accounting for more than eight percent of the overall semiconductor market and more than 34

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Page Erase NOR Flash). The second type has larger sectors where the smallest sectors typically found in this type of SPI flash are 4 kB, but they can be as large as 64 kB. Since this type of SPI flash lacks an internal SRAM buffer, the complete block must be read out and modified

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The hierarchical structure of NAND flash starts at a cell level which establishes strings, then pages, blocks, planes and ultimately a die. A string is a series of connected NAND cells in which the source of one cell is connected to the drain of the next one. Depending on the NAND technology, a

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Despite the additional transistors, the reduction in ground wires and bit lines allows a denser layout and greater storage capacity per chip. (The ground wires and bit lines are actually much wider than the lines in the diagrams.) In addition, NAND flash is typically permitted to contain a

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Degradation or wear of the oxides is the reason why flash memory has limited endurance, and data retention goes down (the potential for data loss increases) with increasing degradation, since the oxides lose their electrically insulating characteristics as they degrade. The oxides must insulate

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In March 2006, Samsung announced flash hard drives with capacity of 4 GB, essentially the same order of magnitude as smaller laptop hard drives, and in September 2006, Samsung announced an 8 GB chip produced using a 40 nm manufacturing process. In January 2008, SanDisk announced

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NOR and NAND flash get their names from the structure of the interconnections between memory cells. In NOR flash, cells are connected in parallel to the bit lines, allowing cells to be read and programmed individually. The parallel connection of cells resembles the parallel connection of

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The first flash-memory based PC to become available was the Sony Vaio UX90, announced for pre-order on 27 June 2006 and began to be shipped in Japan on 3 July 2006 with a 16 GB flash memory hard drive. In late September 2006 Sony upgraded the flash-memory in the Vaio UX90 to 32 GB.

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In order to compute the longevity of the NAND flash, one must account for the size of the memory chip, the type of memory (e.g. SLC/MLC/TLC), and use pattern. Industrial NAND and server NAND are in demand due to their capacity, longer endurance and reliability in sensitive environments.

2484: ROM, is expected to be fault-free). Manufacturers try to maximize the amount of usable storage by shrinking the size of the transistors or cells, however the industry can avoid this and achieve higher storage densities per die by using 3D NAND, which stacks cells on top of each other. 3153:

had NOR flash memory, from which processor instructions could be executed directly in an execute in place architecture and allowed for short boot times. With smartphones, NAND flash memory was adopted as it has larger storage capacities and lower costs, but causes longer boot times because

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V-NAND chip with 24 layers of memory cells requires about 2.9 billion such holes. Next, the hole's inner surface receives multiple coatings, first silicon dioxide, then silicon nitride, then a second layer of silicon dioxide. Finally, the hole is filled with conducting (doped) polysilicon.

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the ECC cannot correct the error during read, it may still detect the error. When doing erase or program operations, the device can detect blocks that fail to program or erase and mark them bad. The data is then written to a different, good block, and the bad block map is updated.

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size shrinking can be compensated by improved error correction mechanisms. Even with these advances, it may be impossible to economically scale flash to smaller and smaller dimensions as the number of electron holding capacity reduces. Many promising new technologies (such as

3805:(SSD) is attractive when considering speed, noise, power consumption, and reliability. Flash drives are gaining traction as mobile device secondary storage devices; they are also used as substitutes for hard drives in high-performance desktop computers and some servers with 2986:

NAND sacrifices the random-access and execute-in-place advantages of NOR. NAND is best suited to systems requiring high capacity data storage. It offers higher densities, larger capacities, and lower cost. It has faster erases, sequential writes, and sequential reads.

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approach. This makes NAND suitable for high-density data storage but less efficient for random access tasks. NAND flash is often employed in scenarios where cost-effective, high-capacity storage is crucial, such as in USB drives, memory cards, and solid-state drives (

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NOR memory has an external address bus for reading and programming. For NOR memory, reading and programming are random-access, and unlocking and erasing are block-wise. For NAND memory, reading and programming are page-wise, and unlocking and erasing are block-wise.

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A joint development at Intel and Micron will allow the production of 32-layer 3.5 terabyte (TB) NAND flash sticks and 10 TB standard-sized SSDs. The device includes 5 packages of 16 × 48 GB TLC dies, using a floating gate cell design.

2733: NAND devices), or to all blocks (as in NOR). This effect is mitigated in some chip firmware or file system drivers by counting the writes and dynamically remapping blocks in order to spread write operations between sectors; this technique is called 2350:

In spacecraft and other high-radiation environments, the on-chip charge pump is the first part of the flash chip to fail, although flash memories will continue to work – in read-only mode – at much higher radiation levels.

2083:(vertical NAND) technology stacks NAND flash memory cells vertically within a chip using 3D charge trap flash (CTP) technology. 3D V-NAND technology was first announced by Toshiba in 2007, and the first device, with 24 layers, was first commercialized by 9385:

Ishida, Koichi; Yasufuku, Tadashi; Miyamoto, Shinji; Nakai, Hiroto; Takamiya, Makoto; Sakurai, Takayasu; Takeuchi, Ken (May 2011). "1.8 V Low-Transient-Energy Adaptive Program-Voltage Generator Based on Boost Converter for 3D-Integrated NAND Flash SSD".

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The flash memory chips inside them are sized in strict binary multiples, but the actual total capacity of the chips is not usable at the drive interface. It is considerably larger than the advertised capacity in order to allow for distribution of writes

2075:(AMD) research team led by Richard M. Fastow, Egyptian engineer Khaled Z. Ahmed and Jordanian engineer Sameer Haddad (who later joined Spansion) demonstrated a charge-trapping mechanism for NOR flash memory cells. CTF was later commercialized by AMD and 1591:. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate. 3005:(ONFI) has developed a standardized low-level interface for NAND flash chips. This allows interoperability between conforming NAND devices from different vendors. The ONFI specification version 1.0 was released on 28 December 2006. It specifies: 3965:

in 2015 states "Today's flash devices, which do not require flash refresh, have a typical retention age of 1 year at room temperature." And that retention time decreases exponentially with increasing temperature. The phenomenon can be modeled by the

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As the number of bits per cell increases, performance and life of NAND flash may degrade, increasing random read times to 100μs for TLC NAND which is 4 times the time required in SLC NAND, and twice the time required in MLC NAND, for random reads.

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Consumer flash storage devices typically are advertised with usable sizes expressed as a small integer power of two (2, 4, 8, etc.) and a conventional designation of megabytes (MB) or gigabytes (GB); e.g., 512 MB, 8 GB. This includes

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orders of magnitude, given V-NAND's use of up to several hundred layers. As of 2020, V-NAND chips with 160 layers are under development by Samsung. As the number of layers increases, the capacity and endurance of flash memory may be increased.

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concept behind flash file systems is the following: when the flash store is to be updated, the file system will write a new copy of the changed data to a fresh block, remap the file pointers, then erase the old block later when it has time.

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There are two major SPI flash types. The first type is characterized by small blocks and one internal SRAM block buffer allowing a complete block to be read to the buffer, partially modified, and then written back (for example, the Atmel

9316: 2983:. For this reason, some systems will use a combination of NOR and NAND memories, where a smaller NOR memory is used as software ROM and a larger NAND memory is partitioned with a file system for use as a non-volatile data storage area. 1889:. Its endurance may be from as little as 100 erase cycles for an on-chip flash memory, to a more typical 10,000 or 100,000 erase cycles, up to 1,000,000 erase cycles. NOR-based flash was the basis of early flash-based removable media; 2891:, such as hard disks. Each block consists of a number of pages. The pages are typically 512, 2,048 or 4,096 bytes in size. Associated with each page are a few bytes (typically 1/32 of the data size) that can be used for storage of an 3982:

are based on flash configuration cells that are used directly as (programmable) switches to connect internal elements together, using the same kind of floating-gate transistor as the flash data storage cells in data storage devices.

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Samsung SSD 850 EVO, Samsung SSD 845DC EVO, Crucial MX300，Memblaze PBlaze5 900, Memblaze PBlaze5 700, Memblaze PBlaze5 910/916, Memblaze PBlaze5 510/516, ADATA SX 8200 PRO (also being sold under "XPG Gammix" branding, model S11 PRO)

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had to be erased completely before they could be rewritten. NAND flash memory, however, may be erased, written, and read in blocks (or pages), which generally are much smaller than the entire device. NOR flash memory allows a single

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pads, rather than the complexity and number of gates used for the device logic. Eliminating bond pads thus permits a more compact integrated circuit, on a smaller die; this increases the number of dies that may be fabricated on a

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the layers; even a slight deviation leads to a minimum bit cost, i.e., minimum equivalent design rule (or maximum density), for a given number of layers; this minimum bit cost layer number decreases for smaller hole diameter.

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applications, on the other hand, require every bit in a word to be accessed simultaneously. This requires word-level addressing. In any case, both bit and word addressing modes are possible with either NOR or NAND flash.

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Serial flash is a small, low-power flash memory that provides only serial access to the data - rather than addressing individual bytes, the user reads or writes large contiguous groups of bytes in the address space serially.

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mode and incorporate an internal address counter, so that it is trivial to configure them to transfer their entire contents to RAM on power-up. When clocked at 50 MHz, for example, a serial flash could transfer a 64

2690:(FTL), which writes to a different cell each time to wear-level the device. This prevents incremental writing within a block; however, it does help the device from being prematurely worn out by intensive write patterns. 1650:, and similar products, for general storage and transfer of data. NAND or NOR flash memory is also often used to store configuration data in digital products, a task previously made possible by EEPROM or battery-powered 14331: 12772: 3938:

It is unclear how long data on flash memory will persist under archival conditions (i.e., benign temperature and humidity with infrequent access with or without prophylactic rewrite). Datasheets of Atmel's flash-based

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There remain some aspects of flash-based SSDs that make them unattractive. The cost per gigabyte of flash memory remains significantly higher than that of hard disks. Also flash memory has a finite number of P/E

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Most NAND devices are shipped from the factory with some bad blocks. These are typically marked according to a specified bad block marking strategy. By allowing some bad blocks, manufacturers achieve far higher

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bytes (64 GB). Most users will have slightly less capacity than this available for their files, due to the space taken by file system metadata and because some operating systems report SSD capacity using

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Early types of floating-gate memory included EPROM (erasable PROM) and EEPROM (electrically erasable PROM) in the 1970s. However, early floating-gate memory required engineers to build a memory cell for each

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but it is not as fast as static RAM or ROM. In portable devices, it is preferred to use flash memory because of its mechanical shock resistance since mechanical drives are more prone to mechanical damage.

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SSDs have proposed returning to the dual Vcc/Vpp supply voltages used on all early flash chips, driving the high Vpp voltage for all flash chips in an SSD with a single shared external boost converter.

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Despite the need for relatively high programming and erasing voltages, virtually all flash chips today require only a single supply voltage and produce the high voltages that are required using on-chip

8416: 3092:(NVMHCI) Working Group. The goal of the group is to provide standard software and hardware programming interfaces for nonvolatile memory subsystems, including the "flash cache" device connected to the 9695: 2846:

Reading from NOR flash is similar to reading from random-access memory, provided the address and data bus are mapped correctly. Because of this, most microprocessors can use NOR flash memory as

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Because of the series connection and removal of wordline contacts, a large grid of NAND flash memory cells will occupy perhaps only 60% of the area of equivalent NOR cells (assuming the same

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Although data structures in flash memory cannot be updated in completely general ways, this allows members to be "removed" by marking them as invalid. This technique may need to be modified for

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announced two flash-memory based PCs, the Q1-SSD and Q30-SSD were expected to become available in June 2006, both of which used 32 GB SSDs, and were at least initially available only in

12406:"Sony Vaio UX UMPC – now with 32 GB Flash memory | NBnews.info. Laptop and notebook news, reviews, test, specs, price | Каталог ноутбуков, ультрабуков и планшетов, новости, обзоры" 11811: 12467: 12672: 13279: 13209: 13099: 13025: 13341: 10160: 12132: 9626: 2596:

that stores charge, in turn enclosing a silicon dioxide cylinder as the tunnel dielectric that surrounds a central rod of conducting polysilicon which acts as the conducting channel.

12973: 7981: 7920: 7704:

The devices offer single-power-supply operation (2.7 V to 3.6 V), sector architecture, Embedded Algorithms, high performance, and a 1,000,000 program/erase cycle endurance guarantee.

7652: 6856: 2956:(Bose-Chaudhuri-Hocquenghem codes) are commonly used ECC for MLC NAND flash. Some MLC NAND flash chips internally generate the appropriate BCH error correction codes. 14256: 9296: 8210: 3533:

techniques and equipment. Since the introduction of 3D NAND, scaling is no longer necessarily associated with Moore's law since ever smaller transistors (cells) are no longer used.

13170: 6920: 2964:

than would be possible if all blocks had to be verified to be good. This significantly reduces NAND flash costs and only slightly decreases the storage capacity of the parts.

2367:

In NOR flash, each cell has one end connected directly to ground, and the other end connected directly to a bit line. This arrangement is called "NOR flash" because it acts like a

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The retention span varies among types and models of flash storage. When supplied with power and idle, the charge of the transistors holding the data is routinely refreshed by the

10918: 14328: 6845: 2864:

The specific commands used to lock, unlock, program, or erase NOR memories differ for each manufacturer. To avoid needing unique driver software for every device made, special

13315: 10110: 3712:

before being written back, making it slow to manage. However, the second type is cheaper than the first and is therefore a good choice when the application is code shadowing.

10641: 8883: 8485: 9857: 8774: 2468:

To read data, first the desired group is selected (in the same way that a single transistor is selected from a NOR array). Next, most of the word lines are pulled up above V

11473: 11407: 3654:

than parallel flash memories, since it transmits and receives data one bit at a time. This may permit a reduction in board space, power consumption, and total system cost.

14853: 10135: 7688: 7618: 2109:

eMMC compliant (product number THGAM0G7D8DBAI6, often abbreviated THGAM on consumer websites) embedded NAND flash memory chip, which was manufactured with eight stacked 2

9015: 7486: 1766:

was invented at Bell Labs between 1955 and 1960, after Frosch and Derick discovered surface passivation and used their discovery to create the first planar transistors.

14110: 10255: 10222: 9331:"4-times faster rising VPASS (10V), 15% lower power VPGM (20V), wide output voltage range voltage generator system for 4-times faster 3D-integrated solid-state drives" 2456:). These groups are then connected via some additional transistors to a NOR-style bit line array in the same way that single transistors are linked in NOR flash. 13487: 12489: 13721: 12335: 12102: 8845: 8452: 3734:

With the increasing speed of modern CPUs, parallel flash devices are often much slower than the memory bus of the computer they are connected to. Conversely, modern

2221: 12934: 12512:

Reliability Qualification results show that the projected data retention failure rate is much less than 1 PPM over 20 years at 85 °C or 100 years at 25 °C

10039: 647: 11374: 10376: 10054: 7066: 10275: 7316: 3998:

percent of the total semiconductor memory market. In 2012, the market was estimated at $ 26.8 billion. It can take up to 10 weeks to produce a flash memory chip.

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per cell, the amount of current flow is sensed (rather than simply its presence or absence), in order to determine more precisely the level of charge on the FG.

12750: 12010: 11988: 11506: 10496: 6952: 2795:. These X-rays can erase programmed bits in a flash chip (convert programmed "0" bits into erased "1" bits). Erased bits ("1" bits) are not affected by X-rays. 14286: 13553: 13126: 8406: 3922:

Floating-gate transistors in the flash storage device hold charge which represents data. This charge gradually leaks over time, leading to an accumulation of

3127:

and so each transistor, contact, etc. is exactly the same size – because NOR flash cells require a separate metal contact for each cell.

2125:

GB flash memory chip that was manufactured with 24 stacked NAND flash chips using a wafer bonding process. Toshiba also used an eight-layer 3D IC for their 32

14242: 12442: 11167: 11137: 9144: 1619:

to be written – to an erased location – or read independently. A flash memory device typically consists of one or more flash

13442: 9709: 9687: 9271: 2710:

increases. For example: For a 45 nm NOR flash, at 1000 hours, the threshold voltage (Vt) loss at 25 deg Celsius is about half that at 90 deg Celsius.

2288:, it indicates that the FG is charged. The binary value of the cell is sensed by determining whether there is current flowing through the transistor when V 14044: 12553: 12040: 11882: 11085: 9907: 8797: 13654: 11836: 10453: 10006: 4537: 2407:

the source-drain current is sufficiently high to cause some high energy electrons to jump through the insulating layer onto the FG, via a process called

8965: 12996:"Markit View: Major events in the 2008 DRAM industry; End application demand remains weak, 2009 NAND Flash demand bit growth being revised down to 81%" 11766: 10426:

Kim, Jesung; Kim, John Min; Noh, Sam H.; Min, Sang Lyul; Cho, Yookun (May 2002). "A Space-Efficient Flash Translation Layer for CompactFlash Systems".

10321: 9214: 9183: 11850: 11668: 11197: 2102:(IC) chips vertically into a single 3D IC chip package. Toshiba introduced 3D IC technology to NAND flash memory in April 2007, when they debuted a 16 13681: 13420: 12686: 12459: 12309: 9395: 8270: 8051: 7458: 6976: 3750:

code stored in flash into RAM; that is, the code is copied from flash into RAM before execution, so that the CPU may access it at full speed. Device

3123:

Each NOR flash cell is larger than a NAND flash cell – 10 F vs 4 F – even when using exactly the same

2152:(400 billion bytes) are available. The same year, Samsung combined 3D IC chip stacking with its 3D V-NAND and TLC technologies to manufacture its 512 1956:, feature extremely small form factors. For example, the microSD card has an area of just over 1.5 cm, with a thickness of less than 1 mm. 1849: 14143: 12633: 10295: 9756: 13520: 11803: 9444: 2608:

Growth of a group of V-NAND cells begins with an alternating stack of conducting (doped) polysilicon layers and insulating silicon dioxide layers.

2555:

architecture. The vertical layers allow larger areal bit densities without requiring smaller individual cells. It is also sold under the trademark

11063: 11035:

Computational Science and Its Applications - ICCSA 2007: International Conference, Kuala Lumpur, Malaysia, August 26-29, 2007. Proceedings, Part I

10619: 6764: 3521:

Multiple chips are often arrayed or die stacked to achieve higher capacities for use in consumer electronic devices such as multimedia players or

2742:

flash memory that would have to go through a large number of programming cycles. This limitation also exists for "read-only" applications such as

2452:: several transistors are connected in series, and the bit line is pulled low only if all the word lines are pulled high (above the transistors' V 12357: 11789: 11588: 7848: 12664: 11618: 11558: 11528: 11231: 8906: 7120:, Lincoln, Derick & Frosch, Carl J., "Oxidation of semiconductive surfaces for controlled diffusion", issued 1957-08-13 2055:

researchers including N. Kodama, K. Oyama and Hiroki Shirai described a type of flash memory with a charge trap method. In 1998, Boaz Eitan of

13907: 13841: 13262: 13091: 13037: 12713: 8639: 8606: 8538: 7885: 2857:

Bad block management is a relatively new feature in NOR chips. In older NOR devices not supporting bad block management, the software or

2718:

Another limitation is that flash memory has a finite number of program – erase cycles (typically written as P/E cycles).

14555: 14209: 13968: 13337: 12820: 11935: 11690: 11440: 10396: 10149: 6972: 6967:

Park, Jonghoon; Song, Seunghwan; Park, Yongha; Bang, Jinbae; Hong, Sangki; Jeong, Byunghoon; Kim, Hyun-Jin; Lee, Chunan; et al. (2017).

6501: 4007: 3073:

with the ONFI specification. The result is that a product designed for one vendor's devices may not be able to use another vendor's devices.

12124: 9618: 9001: 8573: 8513: 14176: 13772: 10085: 7644: 3722:

are based on SRAM configuration cells and require an external configuration device, often a serial flash chip, to reload the configuration

1861:

introduced the first commercial NOR type flash chip in 1988. NOR-based flash has long erase and write times, but provides full address and

13069: 13003: 10560: 9051: 8202: 7912: 6831: 1794:

of data, which proved to be cumbersome, slow, and expensive, restricting floating-gate memory to niche applications in the 1970s, such as

14969: 14386: 13156: 6910: 4050:

Others – 8.7% Note: SK Hynix acquired Intel's NAND business at the end of 2021 Kioxia spun out and got renamed of Toshiba in 2018/2019.

14069: 13194: 12072: 10535: 10189: 9665: 9065: 4527:

design rule or process technology node. While the expected shrink timeline is a factor of two every three years per original version of

3115:

as it can be either byte-addressable or word-addressable, with words being for example 32 bits long, while NAND allows only page access.

12391: 10780: 3943:" microcontrollers typically promise retention times of 20 years at 85 °C (185 °F) and 100 years at 25 °C (77 °F). 3657:

There are several reasons why a serial device, with fewer external pins than a parallel device, can significantly reduce overall cost:

2888: 13863: 13305: 12031: 11115: 10478: 9889: 9831: 9771: 3827:

command employed by most solid state drives, which marks the logical block addresses occupied by the deleted file as unused to enable

2791:, boards with BGA packages are often X-rayed to see if the balls are making proper connections to the proper pad, or if the BGA needs 10927: 9479: 9285:

Yasufuku, Tadashi; Ishida, Koichi; Miyamoto, Shinji; Nakai, Hiroto; Takamiya, Makoto; Sakurai, Takayasu; Takeuchi, Ken (March 2010).

8951: 8741: 8128: 13797: 12169: 11912: 10100: 7586:

Masuoka, F.; Momodomi, M.; Iwata, Y.; Shirota, R. (1987). "New ultra high density EPROM and flash EEPROM with NAND structure cell".

7494: 12930: 12596: 8873: 642: 9849: 3607:

Flash chips continue to be manufactured with capacities under or around 1 MB (e.g. for BIOS-ROMs and embedded applications).

662: 14888: 14863: 14718: 13946: 11463: 11397: 11033: 6528: 4642: 4011: 3662: 3002: 13625: 12187: 10125: 2737:. Another approach is to perform write verification and remapping to spare sectors in case of write failure, a technique called 14652: 14001: 11330: 9095:

Yasufuku, Tadashi; Ishida, Koichi; Miyamoto, Shinji; Nakai, Hiroto; Takamiya, Makoto; Sakurai, Takayasu; Takeuchi, Ken (2009),

8266: 7878:"Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology" 7622: 7591: 7556: 6797: 2961: 1654:. A key disadvantage of flash memory is that it can endure only a relatively small number of write cycles in a specific block. 1536: 14927: 14878: 14100: 13697: 12286: 11043: 11016: 10955: 10843: 10709: 10354: 9965: 9806: 9602: 9537: 9511: 9361: 9238: 8245: 8024: 7742: 7350: 7213: 7188: 6992: 4841: 1077: 12496: 11962: 10252: 7383: 4515:

Due to its relatively simple structure and high demand for higher capacity, NAND flash memory is the most aggressively

12963: 12863: 8722: 7441:"Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same" 7273: 6892: 4516: 4506: 1815: 1730: 13736: 12327: 12094: 10945: 10726: 8835: 7793: 3715:

The two types are not easily exchangeable, since they do not have the same pinout, and the command sets are incompatible.

14319: 12917: 12578: 11006: 10753: 10397:"Toshiba announces 0.13 micron 1Gb monolithic NAND featuring large block size for improved write/erase speed performance" 10031: 12904:

Unit shipments increased 64% in 1999 from the prior year, and are forecast to increase 44% to 1.8 billion units in 2000.

12532: 11653: 11364: 10672: 10373: 10055:"Micron Collaborates with Sun Microsystems to Extend Lifespan of Flash-Based Storage, Achieves One Million Write Cycles" 7729:. 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014). Saratoga Springs, NY. pp. 113–119. 7051: 2706:

Data stored on flash cells is steadily lost due to electron detrapping. The rate of loss increases exponentially as the

14734: 10892: 10833: 10272: 7304: 1286: 238: 13603: 11713: 10699: 9555:"High-voltage transistor scaling circuit techniques for high-density negative-gate channel-erasing NOR flash memories" 8442: 8224:

Grossi, A.; Zambelli, C.; Olivo, P. (7 June 2016). "Reliability of 3D NAND Flash Memories". In Micheloni, Rino (ed.).

7025: 283: 14257:"Samsung Breaks Terabyte Threshold for Smartphone Storage with Industry's First 1TB Embedded Universal Flash Storage" 13242: 12871: 12740: 12018: 11996: 11496: 10902: 10875: 10790: 10763: 10736: 10682: 9527: 9265: 9208: 9177: 9130: 8286: 7281: 7101: 6942: 2949: 2372:

characteristic of NOR devices allow for both direct code execution and data storage in a single memory product.

1025: 968: 288: 13564: 9592: 9501: 3950:

of the flash storage. The ability to retain data varies among flash storage devices due to differences in firmware,

14949: 12252: 12011:"SanDisk UltraII Line Picks Up Speed and Boosts Capacity with New 32- AND 16-Gigabyte SDHC and 8GB SDHC Plus Cards" 10865: 10344: 9997: 8229: 3124: 2559:, which is a trademark of Kioxia Corporation (formerly Toshiba Memory Corporation). 3D NAND was first announced by 2404:

the channel is now turned on, so electrons can flow from the source to the drain (assuming an NMOS transistor)

136: 17: 14232: 12432: 11175: 11145: 3860:

introduced in 2008, and from 2010 onwards, all models were shipped with an SSD. Starting in late 2011, as part of

3069:, have chosen to use an interface of their own design known as Toggle Mode (and now Toggle). This interface isn't 14379: 13452: 9720: 9097: 4845: 3643: 1966:

NOR flash was the most common type of Flash memory sold until 2005, when NAND flash overtook NOR flash in sales.

1351: 1011: 955: 13900:"Toshiba and SanDisk introduce a one gigabit NAND flash memory chip, doubling capacity of future flash products" 8040:

Bez, Roberto; Camerlenghi, E.; Modelli, Alberto; Visconti, Angelo (April 2003). "Introduction to flash memory".

2067:

a flash memory technology named NROM that took advantage of a charge trapping layer to replace the conventional

14893: 14414: 14033: 13644: 13275: 12546: 12036: 11886: 11825:

Jin, Hyunjoo; Nellis, Stephen; Hu, Krystal; Bera, Ayanti; Lee, Joyce (20 October 2020). Coates, Stephen (ed.).

11093: 10449: 4853: 3883:

for files on the disk that are often referenced, but rarely modified, such as application and operating system

3828: 1037: 706: 518: 114: 12386:[Release of the "VAIO type U" paperback-sized model with flash memory] (Press release) (in Japanese). 11826: 10005:(Technical report). Solid State Storage Initiative (SSSI) of the Storage Network Industry Association (SNIA). 8662: 3334:

Samsung K9G8G08U0M (Example for medium-capacity applications), Memblaze PBlaze4, ADATA SU900, Mushkin Reactor

3070: 2872:

sequential data writes, NOR flash chips typically have slow write speeds, compared with NAND flash.

2861:

controlling the memory chip must correct for blocks that wear out, or the device will cease to work reliably.

12405: 9288:"Inductor and TSV Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories" 8973: 8003:

Ito, Takashi; Taito, Yasuhiko (9 September 2017). "SONOS Split-Gate eFlash Memory". In Hidaka, Hideto (ed.).

7519: 3633: 2865: 2425: 2319: 2313: 1783: 1386: 13092:"Winbond Top Serial Flash Memory Supplier Worldwide, Ships 1.7 Billion Units in 2012, Ramps 58nm Production" 11756: 11345: 10317: 9871: 8531:"Toshiba commercializes Industry's Highest Capacity Embedded NAND Flash Memory for Mobile Consumer Products" 2923:

may need a read-erase-write process, and the new data is actually moved to another block. In addition, on a

14964: 14959: 14464: 12313: 11857: 11205: 9098:"Proceedings of the 14th ACM/IEEE international symposium on Low power electronics and design - ISLPED '09" 8351: 3911: 3154:

instructions cannot be executed from it directly, and must be copied to RAM memory first before execution.

2807: 2787:(BGA) packages, and even the ones that do not are often mounted on a PCB next to other BGA packages. After 2726:

announced an SLC NAND flash memory chip rated for 1,000,000 P/E cycles on 17 December 2008.

2023:(TLC) technology storing 3-bits per cell, and began mass-producing NAND chips with TLC technology in 2010. 737: 632: 533: 13410: 12597:"The Rise of the Flash Memory Market: Its Impact on Firm Behavior and Global Semiconductor Trade Patterns" 3513:

to perform wear leveling and error correction so use of a specific flash file system may not add benefit.

2156:

GB KLUFG8R1EM flash memory chip with eight stacked 64-layer V-NAND chips. In 2019, Samsung produced a 1024

14883: 14545: 12641: 10597: 10291: 9746: 8663:"NAND we'll send foreign tech packing, says China of Xtacking: DRAM-speed... but light on layer-stacking" 4531:, this has recently been accelerated in the case of NAND flash to a factor of two every two years. 4523:. The heavy competition among the top few manufacturers only adds to the aggressiveness in shrinking the 4478: 4032: 2975:

or copied into memory-mapped RAM and executed there (leading to the common combination of NAND + RAM). A

2476:. The series group will conduct (and pull the bit line low) if the selected bit has not been programmed. 1963:

as a result of several major technologies that were commercialized during the late 2000s to early 2010s.

694: 13524: 11989:"SanDisk Announces the 12-Gigabyte microSDHC Card - the World's Largest Capacity Card for Mobile Phones" 11312: 9441: 8345:

Fastow, Richard M.; Ahmed, Khaled Z.; Haddad, Sameer; Randolph, Mark; Huster, C.; Hom, P. (April 2000).

4856:, and others) are under investigation and development as possible more scalable replacements for flash. 3838:

transactions, even a modest amount of flash storage can offer vast speedups over arrays of disk drives.

2934:

chip. Some SD cards, for example, include controller circuitry to perform bad block management and

2672:

2, never make use of this "rewrite" capability—they do a lot of extra work to meet a "write once rule".

1877:(ROM) chips, which are used to store program code that rarely needs to be updated, such as a computer's 1737:

and several dozen layers of 3D TLC NAND cells (per die) simultaneously to achieve capacities of up to 1

14372: 12899: 11059: 10642:"Dell, Intel And Microsoft Join Forces To Increase Adoption of NAND-Based Flash Memory in PC Platforms" 10627: 8703: 6772: 6496: 3962: 3014: 2730: 1674: 1529: 1326: 1225: 1097: 727: 716: 14474: 14355: 7454: 3879:

that attempt to combine the advantages of both technologies, using flash as a high-speed non-volatile

3600:

More recent flash drives (as of 2012) have much greater capacities, holding 64, 128, and 256 GB.

825: 14133: 12361: 11781: 7840: 1722:. EEPROMs, however, are still used in applications that require only small amounts of storage, as in 588: 523: 418: 11626: 11596: 11566: 11536: 11275: 8915: 8320:"US Patent 5,768,192: Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping" 4869: 2011:

introduced NAND flash chips with QLC technology storing 4 bits per cell and holding a capacity of 64

14954: 14683: 14439: 13899: 13833: 12032:

https://www.pcworld.com/article/225370/look_out_for_the_256gb_thumb_drive_and_the_128gb_tablet.html

11249: 8631: 8598: 8530: 7774: 6544: 3666: 3490: 2528: 2338:

Over half the energy used by a 1.8 V-NAND flash chip is lost in the charge pump itself. Since

2225: 2180: 1398: 1381: 870: 156: 14199: 13976: 12813: 11939: 11698: 11430: 10404: 8684: 8563: 4016:

The following were the largest NAND flash memory manufacturers, as of the second quarter of 2023.

14815: 14434: 13885: 13819: 12835: 10077: 8991: 8969: 8503: 8042: 7439:

Frohman-Bentchkowsky, Dov; Mar, Jerry; Perlegos, George; Johnson, William S. (15 December 1978).

7312: 6736: 6600: 6539: 6486: 4101: 3923: 3510: 3502: 3460: 2931: 2887:

NAND flash architecture was introduced by Toshiba in 1989. These memories are accessed much like

2687: 2199: 1977: 1827: 1775: 1624: 1393: 1210: 933: 338: 173: 151: 131: 84: 55: 13761: 13059: 9255: 7230: 3314:

Samsung OneNAND KFW4G16Q2M, Toshiba SLC NAND flash chips, Transcend SD500, Fujitsu S26361-F3298

14873: 12995: 10567: 9946:"Accelerated reliability testing of flash memory: Accuracy and issues on a 45nm NOR technology" 9041: 8005:

Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations

6823: 3992: 3685:

costs. A serial device may be packaged in a smaller and simpler package than a parallel device.

3571: 3035: 2976: 2806:

The low-level interface to flash memory chips differs from those of other memory types such as

2260:) by changing the FG charge. In order to read a value from the cell, an intermediate voltage (V 2072: 1723: 1266: 483: 353: 293: 14792: 13232: 10807: 9198: 9159: 7619:"NAND vs. NOR flash technology: The designer should weigh the options when using flash memory" 3403:

Samsung SSD 860 QVO SATA, Intel SSD 660p, Micron 5210 ION, Crucial P1, Samsung SSD BM991 NVMe

2930:

NAND devices also require bad block management by the device driver software or by a separate

2838: 615: 14605:(bankrupt, assets sold to Toshiba, which later spun off its SSD and flash business to Kioxia) 13937: 13626:"Toshiba : News Release (31 Aug, 2010): Toshiba launches 24nm process NAND flash memory" 13447: 12857: 10528: 10196: 9931: 6523: 6491: 3868:

initiative, an increasing number of ultra-thin laptops are being shipped with SSDs standard.

3651: 2980: 2892: 2876: 2772: 2531:

view, for example, if operating system writes 1100 0011 to the flash storage device (such as

2408: 2343: 2095: 2056: 1698: 1678: 1522: 769: 687: 473: 278: 258: 248: 104: 69: 13193: 12383: 12065:"3D flash technology moves forward with 10 TB SSDs and the first 48-layer memory cells" 12064: 9661: 7050: 6943:"Samsung Starts Production of 512 GB UFS NAND Flash Memory: 64-Layer V-NAND, 860 MB/s Reads" 4865: 2137:

GB chips. In the 2010s, 3D ICs came into widespread commercial use for NAND flash memory in

14769: 13870: 12328:"Samsung Electronics Launches the World's First PCs with NAND Flash-based Solid State Disk" 11123: 10467: 9688:"Samsung Electronics Starts Mass Production of Industry First 3-bit 3D V-NAND Flash Memory" 9566: 9399: 9300: 9165: 9110: 8360: 8082: 7949: 7487:"NAND Flash Memory: 25 Years of Invention, Development – Data Storage – News & Reviews" 7242: 4524: 4098: 4063: 3810: 3801:. Flash memory does not have the mechanical limitations and latencies of hard drives, so a 3294: 2792: 2771:

error will occur with possible data loss if the errors are too numerous to correct with an

2707: 2504: 2445: 2318:

The process of moving electrons from the control gate and into the floating gate is called

2215: 1770:

went on to develop a variation, the floating-gate MOSFET, with Taiwanese-American engineer

1759: 1585: 1465: 1333: 1112: 1072: 995: 608: 513: 403: 298: 161: 141: 124: 119: 14350: 11294: 10920:

NAND Flash 101: An Introduction to NAND Flash and How to Design It in to Your Next Product

9471: 8943: 8142:

Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen (25 September 2014).

8120: 7877: 4873: 3823: 2868:(CFI) commands allow the device to identify itself and its critical operating parameters. 2611:

The next step is to form a cylindrical hole through these layers. In practice, a 128

8: 14621: 14515: 14494: 14479: 14040: 13804: 13161: 12158: 11908: 10035: 10032:"Difference between SLC, MLC, TLC and 3D NAND in USB flash drives, SSDs and memory cards" 8008: 7954: 7648: 7093: 6793: 6657: 6549: 4849: 4020: 3849:. The Q1-SSD and Q30-SSD launch was delayed and finally was shipped in late August 2006. 3842: 3675: 3590: 3530: 3493:(MTDs), which are embedded flash memories that do not have a controller. Removable flash 2564: 2114: 2084: 2016: 1898: 1836: 1734: 1719: 1706: 1702: 1556: 1371: 1062: 1000: 985: 852: 804: 657: 468: 166: 14345: 12607: 9570: 9403: 9304: 9169: 9114: 8723:"Look who's avoided getting chatty about XPoint again. Micron... let's get non-volatile" 8364: 8261:

Kodama, N.; Oyama, K.; Shirai, H.; Saitoh, K.; Okazawa, T.; Hokari, Y. (December 1991).

8086: 7246: 2698: 2424:

is applied between the CG and source terminal, pulling the electrons off the FG through

1893:

was originally based on it, though later cards moved to less expensive NAND flash.

14668: 14626: 13703: 13270: 12547:"Data Retention in MLC NAND Flash Memory: Characterization, Optimization, and Recovery" 11737: 10474: 9971: 9812: 9423: 9136: 8840: 8384: 8300: 8178: 8143: 8098: 7756: 7568: 7137: 7006: 6533: 4520: 3967: 2750:, which are programmed only once or at most a few times during their lifetimes, due to 2747: 2276:, the FG must be uncharged (if it were charged, there would not be conduction because V 2099: 1996: 1960: 1795: 1553: 1471: 1436: 1082: 508: 493: 438: 433: 423: 398: 323: 31: 14166: 13932: 12918:"Evolution of Nonvoltatile Semiconductor Memory: From Invention to Nanocrystal Memory" 1565:

that can be electrically erased and reprogrammed. The two main types of flash memory,

14616: 14510: 14419: 14395: 13693: 13598: 13238: 12867: 12437: 12195: 11761: 11672: 11501: 11039: 11012: 10951: 10898: 10871: 10839: 10786: 10759: 10732: 10705: 10701:

Flash Memories: Economic Principles of Performance, Cost and Reliability Optimization

10678: 10350: 10231: 10156: 10058: 9961: 9816: 9802: 9598: 9594:

Flash Memories: Economic Principles of Performance, Cost and Reliability Optimization

9533: 9507: 9415: 9367: 9357: 9287: 9261: 9234: 9204: 9173: 9126: 8376: 8304: 8292: 8282: 8241: 8183: 8165: 8102: 8020: 7748: 7738: 7723: 7277: 7254: 7209: 7184: 7097: 7010: 6998: 6988: 6888: 6852: 6674: 6592: 4837: 4693: 4657: 4054:

Samsung remains the largest NAND flash memory manufacturer as of first quarter 2022.

4044: 3880: 3802: 3784: 3708: 3538: 3480: 3305: 3051: 2719: 2576: 2552: 2516: 2233: 2192: 2184: 2037: 2032: 2020: 1910: 1858: 1639: 1148: 1143: 1067: 1032: 886: 864: 763: 722: 625: 463: 188: 14011: 13707: 10620:"Toshiba Introduces Double Data Rate Toggle Mode NAND in MLC And SLC Configurations" 9975: 9798: 9427: 8388: 8073:

Lee, Jang-Sik (18 October 2011). "Review paper: Nano-floating gate memory devices".

7760: 7572: 6786: 3058:, as well as by major manufacturers of devices incorporating NAND flash chips. 2543: 14484: 14459: 14429: 14340: 13685: 12157:

Master, Neal; Andrews, Mathew; Hick, Jason; Canon, Shane; Wright, Nicholas (2010).

12125:"Samsung Unveils 32TB SSD Leveraging 4th Gen 64-Layer 3D V-NAND | Custom PC Review" 11804:"Samsung Electronics Starts Mass Production of Industry's First 4-bit Consumer SSD" 10980: 10431: 9953: 9950:

Proceedings of 2013 International Conference on IC Design & Technology (ICICDT)

9794: 9574: 9407: 9349: 9308: 9226: 9140: 9118: 8368: 8346: 8274: 8233: 8173: 8155: 8090: 8055: 8012: 7730: 7599: 7560: 7342: 7250: 7176: 7149: 6980: 6604: 4653: 4067: 3955: 3589:(MLC) technology, capable of storing two bits of data per cell. In September 2005, 3586: 3319: 3248: 3111:

The interface provided for reading and writing the memory is different; NOR allows

2847: 2811: 2723: 2676: 2640:

The top opening widens with more layers, counteracting the increase in bit density.

2551:

Vertical NAND (V-NAND) or 3D NAND memory stacks memory cells vertically and uses a

2496: 2384:

Programming a NOR memory cell (setting it to logical 0), via hot-electron injection

2188: 1985: 1969: 1874: 1779: 1742: 1483: 1477: 1403: 1366: 1356: 1321: 1133: 1087: 1055: 830: 813: 498: 458: 218: 203: 99: 89: 38: 12282: 9999:

NAND Flash Solid State Storage for the Enterprise, An In-depth Look at Reliability

8478:"Samsung Introduces World's First 3D V-NAND Based SSD for Enterprise Applications" 8407:"Samsung produces first 3D NAND, aims to boost densities, drive lower cost per GB" 7440: 7425: 7405: 14868: 14570: 14535: 14335: 14323: 13064: 12887: 12220: 11966: 10380: 10279: 10259: 9850:"Samsung said to be developing industry's first 160-layer NAND flash memory chip" 9448: 9230: 8568: 7982:"Interview: Spansion's CTO Talks About Embedded Charge Trap NOR Flash Technology" 7373: 4747: 4462: 4458: 3951: 3647: 3646:(SPI) is a typical protocol for accessing the device. When incorporated into an 3506: 3463:, the endurance of a storage system can be tuned to serve specific requirements. 3022: 3018: 2784: 2683: 2588: 2508: 2339: 2129:

GB THGBM flash chip in 2008. In 2010, Toshiba used a 16-layer 3D IC for their 128

1933: 1870: 1831: 1635: 1559: 1376: 1203: 1190: 881: 876: 732: 599: 578: 553: 413: 333: 263: 233: 208: 94: 65: 51: 11464:"Samsung SSD 845DC EVO/PRO Performance Preview & Exploring IOPS Consistency" 11398:"Samsung SSD 845DC EVO/PRO Performance Preview & Exploring IOPS Consistency" 9957: 9908:"Calculating the Maximum Density and Equivalent 2D Design Rule of 3D NAND Flash" 9890:"Calculating the Maximum Density and Equivalent 2D Design Rule of 3D NAND Flash" 8237: 8016: 6881: 3910:

As of 2012, there are attempts to use flash memory as the main computer memory,

3746:

offers access times below 20 ns. Because of this, it is often desirable to

2292:

is asserted on the CG. In a multi-level cell device, which stores more than one

14810: 14698: 13689: 12095:"Samsung Launches Monster 4TB 850 EVO SSD Priced at $ 1,499 | Custom PC Review" 9945: 9786: 9554: 9346:

Low power 3D-integrated Solid-State Drive (SSD) with adaptive voltage generator

9330: 9312: 7801: 7180: 7117: 6984: 4528: 4510: 4466: 3768: 3526: 2968: 2633: 2500: 2301: 2229: 2138: 1925: 1921: 1682: 1562: 1495: 1413: 1256: 913: 775: 711: 583: 568: 548: 543: 488: 453: 408: 358: 348: 343: 328: 223: 213: 146: 10972: 10497:"NAND Flash Solid State Storage Performance and Capability – an In-depth Look" 9411: 8767:"Western Digital Breaks Boundaries with World's Highest-Capacity microSD Card" 8094: 8059: 7734: 7551:

Masuoka, F.; Asano, M.; Iwahashi, H.; Komuro, T.; Tanaka, S. (December 1984).

7473: 4493:

billion known individual flash chip sales as of 2015, totalling at least 196.5

2163:

flash chip, with eight stacked 96-layer V-NAND chips and with QLC technology.

14943: 14903: 14740: 14489: 14316: 13353: 13200: 13111: 12524: 11782:"Samsung 860 QVO review: the first QLC SATA SSD, but it can't topple TLC yet" 11649: 10435: 9578: 9419: 9371: 9353: 8380: 8296: 8278: 8169: 7752: 7603: 7564: 7378: 7168: 7057: 7002: 4666: 4591: 4489:

billion MCU and SoC chips with embedded flash memory, in addition to the 45.4

3692: 3567: 3559: 3456: 3150: 3112: 2935: 2858: 2819: 2734: 2729:

The guaranteed cycle count may apply only to block zero (as is the case with

2068: 1902: 1866: 1799: 1771: 1686: 1643: 1599: 1595: 1501: 1128: 1123: 1092: 847: 757: 573: 563: 558: 538: 373: 363: 243: 228: 14200:"SK Hynix Starts Production of 128-Layer 4D NAND, 176-Layer Being Developed" 9787:"Manufacturing Challenges and Cost Evaluation of New Generation 3D Memories" 9122: 8160: 3585:

developed a NAND flash chip capable of storing 1 GB of data using

2048:

against electrons to prevent them from leaking which would cause data loss.

1913:(SSD). For example, SSDs store data using multiple NAND flash memory chips. 14908: 14758: 13380: 13310: 13195:"Data 9, Storage 1 - NAND Production Falls Behind in the Age of Hyperscale" 13166: 13026:"NOR Flash Memory Finds Growth Opportunities in Tablets and E-Book Readers" 10105: 8187: 3872: 3597:

availability of their 16 GB MicroSDHC and 32 GB SDHC Plus cards.

2945: 2788: 2487:

NAND flash cells are read by analysing their response to various voltages.

2420:

To erase a NOR flash cell (resetting it to the "1" state), a large voltage

1929: 1890: 1774:

at Bell Labs in 1967. They proposed that it could be used as floating-gate

1690: 1616: 1448: 1442: 1408: 1276: 1231: 1215: 1107: 903: 898: 820: 503: 478: 378: 313: 268: 253: 12665:"Power outage may have ruined 15 exabytes of WD and Toshiba flash storage" 10891:

Rudan, Massimo; Brunetti, Rossella; Reggiani, Susanna (10 November 2022).

9932:"AVR105: Power Efficient High Endurance Parameter Storage in Flash Memory" 2392:

Erasing a NOR memory cell (setting it to logical 1), via quantum tunneling

14807: 14752: 14746: 13722:"A chronological list of Intel products. The products are sorted by date" 11346:"The Samsung 983 ZET (Z-NAND) SSD Review: How Fast Can Flash Memory Get?" 10130: 10126:"Flash memory breakthrough could lead to even more reliable data storage" 9996:

Thatcher, Jonathan; Coughlin, Tom; Handy, Jim; Ekker, Neal (April 2009).

8742:"Micron Takes Lead With 232-Layer NAND Flash, up to 2TB per Chip Package" 8599:"Toshiba Launches the Largest Density Embedded NAND Flash Memory Devices" 8411: 6621: 4086: 3857: 3846: 3831:, data recovery software is not able to restore files deleted from such. 3494: 3093: 3089: 3042:

The ONFI group is supported by major NAND flash manufacturers, including

3031:

A standard command set for reading, writing, and erasing NAND flash chips

2927:

Zoned Namespaces SSD, it usually uses flash block size as the zone size.

2924: 2823: 2798:

Some manufacturers are now making X-ray proof SD and USB memory devices.

2743: 2702:

45nm NOR flash memory example of data retention varying with temperatures

2512: 2332: 1906: 1886: 1767: 1758:

The origins of flash memory can be traced back to the development of the

1710: 1694: 1631: 1620: 1507: 1459: 893: 428: 368: 273: 14647:'s NAND flash SSD business including controllers and renamed it Solidigm 12260: 10979:. Vol. 85, no. 8 (published August 1997). pp. 1248–1271. 10253:"Dose Minimization During X-ray Inspection of Surface-Mounted Flash ICs" 9772:"Samsung has 300-layer NAND coming, with 430 layers after that – report" 8632:"Toshiba Launches Industry's Largest Embedded NAND Flash Memory Modules" 7913:"SanDisk ships world's first memory cards with 64 gigabit X4 NAND flash" 3894:, the NAND flash products are used as file storage device, for example, 2818:, which support bit-alterability (both zero to one and one to zero) and 2342:

are inherently more efficient than charge pumps, researchers developing

14763: 14693: 14409: 13157:"Flash memory prices rebound as makers introduce larger-capacity chips" 13033: 12856:

Cappelletti, Paulo; Golla, Carla; Olivo, Piero; Zanoni, Enrico (2013).

8704:"What the PUC: SK Hynix next to join big boys in 96-layer 3D NAND land" 8685:"2021 NAND Flash Updates from ISSCC: The Leaning Towers of TLC and QLC" 3891: 3884: 3876: 3764: 3756: 3747: 3743: 3739: 3735: 3682: 3542: 3026: 2979:(MMU) in the system is helpful, but this can also be accomplished with 2738: 2431: 2171: 1917: 1905:, and is thus highly suitable for use in mass-storage devices, such as 1835:

because the erasure process of the memory contents reminded him of the

1823: 1651: 1647: 1581: 1102: 928: 682: 448: 443: 318: 183: 109: 12159:"Performance analysis of commodity and enterprise class flash devices" 11232:"SSDs are on track to get bigger and cheaper thanks to PLC technology" 8372: 7438: 7208:. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg. p. 321. 7153: 7138:"Surface Protection and Selective Masking during Diffusion in Silicon" 3789: 2906:

32 pages of 512+16 bytes each for a block size (effective) of 16

2179:

Flash memory stores information in an array of memory cells made from

14631: 14580: 14364: 14204: 14105: 14070:"Toshiba Develops World's First 4-bit Per Cell QLC NAND Flash Memory" 13649: 13415: 13338:"Combined SSD, HDD Storage Shipped Jumps 21% to 912 Exabytes in 2018" 12221:"Bebop to the Boolean Boogie: An Unconventional Guide to Electronics" 12188:"Samsung Confirms 32nm Flash Problems, Working on New SSD Controller" 11827:"South Korea's SK Hynix to buy Intel's NAND business for $ 9 billion" 11718: 11468: 11435: 11402: 11369: 11313:"SanDisk Ships Flash Memory Cards With 64 Gigabit X4 NAND Technology" 10984: 10645: 9751: 9046: 8996: 8878: 8798:"Expand Your Mobile Storage With New 400GB microSD Card From SanDisk" 7426:"Electrically programmable and electrically erasable MOS memory cell" 6947: 6915: 6827: 6506: 4470: 4092: 3865: 3798: 3797:

One more recent application for flash memory is as a replacement for

3772: 3723: 3670: 3546: 3455:

However, by applying certain algorithms and design paradigms such as

3139: 3135: 3085: 2953: 2449: 2004: 1670: 1578: 1489: 1454: 1291: 1220: 1118: 989: 980: 677: 620: 388: 308: 12283:"Flash Solid State Disks – Inferior Technology or Closet Superstar?" 11455: 11422: 11389: 9791:

2020 China Semiconductor Technology International Conference (CSTIC)

7645:"H8S/2357 Group, H8S/2357F-ZTATTM, H8S/2398F-ZTATTM Hardware Manual" 6911:"Samsung Starts Production of 1 TB eUFS 2.1 Storage for Smartphones" 3541:

marketed as hard drive replacements, in accordance with traditional

2503:

for erasing. NAND flash memory forms the core of the removable

2401:

an elevated on-voltage (typically >5 V) is applied to the CG

2380: 14638: 14608: 14520: 14449: 14341:

How flash storage works, presentation by David Woodhouse from Intel

14171: 14138: 14006: 13373:

Design of SoC for High Reliability Systems with Embedded Processors

12714:"SK Hynix completes first phase of $ 9 bln Intel NAND business buy" 12691: 11714:"The Intel SSD 660p SSD Review: QLC NAND Arrives For Consumer SSDs" 11365:"Testing Samsung 850 Pro Endurance & Measuring V-NAND Die Size" 8508: 8447: 6664: 6518: 6510: 4797: 4457:

In addition to individual flash memory chips, flash memory is also

4038: 3947: 3927: 3751: 3575: 3550: 3433: 2991: 2990:

Further information on the NAND flash memory or SSD operation:

2918:

128 pages of 4,096+128 bytes each for a block size of 512 KiB.

2907: 2896: 2535:), the data actually written to the flash memory may be 0011 1100. 2368: 2359: 2160: 2149: 2118: 2106: 2064: 2060: 1882: 1862: 1738: 1574: 1418: 1361: 1296: 1251: 1236: 1006: 975: 948: 923: 781: 667: 393: 303: 198: 193: 13869:. Integrated Circuit Engineering Corporation. 1997. Archived from 13803:. Integrated Circuit Engineering Corporation. 1996. Archived from 13680:. 24th International Conference on Microelectronics. Niš, Serbia: 13411:"Arm TechCon 2019 Keynote Live Blog (Starts at 10am PT/17:00 UTC)" 13127:"Samsung: NAND flash industry will triple output to 253EB by 2020" 11851:"NAND Evolution and its Effects on Solid State Drive Useable Life" 3593:

announced that it had developed the world's first 2 GB chip.

2668:, to represent sector metadata. Other flash file systems, such as 46: 14678: 14575: 14359: 14329:

Understanding and selecting higher performance NAND architectures

Pavan, Paolo; Bez, Roberto; Olivo, Piero; Zanoni, Enrico (1997).

10623: 10400: 9716: 9691: 9457: 8770: 8635: 8602: 8534: 8481: 8263:

A symmetrical side wall (SSW)-DSA cell for a 64 Mbit flash memory

7959: 7881: 7529: 7524: 7474:

Semiconductor memory device and method for manufacturing the same

7062: 4751: 4743: 4634: 3582: 3066: 3062: 3055: 2915:

64 pages of 4,096+128 bytes each for a block size of 256 KiB

2584: 2560: 2076: 2008: 1992: 1953: 1819: 1603: 1316: 1306: 1301: 1261: 1163: 1158: 1138: 943: 918: 908: 699: 13645:"Micron's ClearNAND: 25nm + ECC, Combats Increasing Error Rates" 11669:"Say Hello: Meet the World's First QLC SSD, the Micron 5210 ION" 11005:

Micheloni, Rino; Crippa, Luca; Marelli, Alessia (27 July 2010).

10864:

Micheloni, Rino; Crippa, Luca; Marelli, Alessia (27 July 2010).

10671:

Micheloni, Rino; Crippa, Luca; Marelli, Alessia (27 July 2010).

10343:

Micheloni, Rino; Crippa, Luca; Marelli, Alessia (27 July 2010).

9257:

CMOSET Fall 2009 Circuits and Memories Track Presentation Slides

9008: 3778: 3525:. The capacity scaling (increase) of flash chips used to follow 2912:

64 pages of 2,048+64 bytes each for a block size of 128 KiB

37:

For the neuropsychological concept related to human memory, see

14688: 14597: 14539: 14293: 14134:"Toshiba's flash chips could boost SSD capacity by 500 percent" 13205: 12968: 12819:. Integrated Circuit Engineering Corporation. 1997. p. 4. 11738:"SSD endurance myths and legends articles on StorageSearch.com" 11497:"Flash Industry Trends Could Lead Users Back to Spinning Disks" 9619:"NAND Flash Controllers - The key to endurance and reliability" 8802: 7678:"AMD DL160 and DL320 Series Flash: New Densities, New Features" 7408:, "Storage field effect transistors", issued 1978-07-19 4832: 4026: 3940: 3681:

Reducing the number of external pins also reduces assembly and

3415: 3010: 2972: 2815: 2660: 2080: 1949: 1945: 1811: 1763: 1607: 1588: 1311: 1271: 1153: 1042: 840: 383: 13340:(Press release). Cupertino, Calif.: TRENDFOCUS. 7 March 2019. 10593: 8874:"Samsung Shares SSD Roadmap for QLC NAND And 96-layer 3D NAND" 2388: 2133:

GB THGBM2 flash chip, which was manufactured with 16 stacked 8

1623:(each holding many flash memory cells), along with a separate 14858: 14837: 14820: 14797: 14644: 14526: 14237: 13768: 13732: 12745: 11356: 10566:. Open NAND Flash Interface. 28 December 2006. Archived from 8928: 8039: 6741: 4697: 4623: 4580: 4575: 3861: 3431:

Numonyx M58BW (Endurance rating of 100,000 erases per block);

3108:

The connections of the individual memory cells are different.

3077: 3047: 3043: 2669: 2665: 2203: 2187:(SLC) devices, each cell stores only one bit of information. 1611: 1246: 1183: 1178: 1173: 835: 792: 786: 672: 652: 637: 13261:

Reinsel, David; Gantz, John; Rydning, John (November 2018).

13234:

Digital Storage in Consumer Electronics: The Essential Guide

12433:"Princeton: Replacing RAM with Flash Can Save Massive Power" 11431:"Samsung SSD 850 EVO (120GB, 250GB, 500GB & 1TB) Review" 9832:"Comparison of Current 3D NAND Chip & Cell Architecture" 8829: 8827: 8825: 8203:"Charge trap technology advantages for 3D NAND flash drives" 3856:

A solid-state drive was offered as an option with the first

3380:

Samsung SSD 850 PRO, Samsung SSD 845DC PRO, Samsung 860 PRO

14898: 14590: 14585: 14444: 14317:

Semiconductor Characterization System has diverse functions

12925: 12855: 12387: 12238: 9552: 9456:

most sensitive circuit functions, usually failing below 10

9452: 9384: 9284: 9094: 8958: 8924: 7595: 7585: 6608: 6514: 6513:), and the successor format Secure Digital Ultra Capacity ( 6481: 3979: 3899: 3895: 3835: 3806: 3760: 3719: 3701: 3498: 3436:

S29CD016J (Endurance rating of 1,000,000 erases per block)

3131: 3081: 2612: 2481: 2480:

certain number of faults (NOR flash, as is used for a

2148:

As of August 2017, microSD cards with a capacity up to 400

1878: 1762:, also known as the floating-gate transistor. The original 1241: 528: 178: 13094:(Press release). San Jose, Calif. & Taichung, Taiwan: 9995: 9553:

Tanzawa, T.; Takano, Y.; Watanabe, K.; Atsumi, S. (2002).

9348:. IEEE International Memory Workshop (IMW). Seoul, Korea. 9066:"Solid State bit density, and the Flash Memory Controller" 8217: 7553:

A new flash EPROM cell using triple polysilicon technology

7550: 7231:"The mechanisms for silicon oxidation in steam and oxygen" 3688:

Smaller and lower pin-count packages occupy less PCB area.

2686:

and memory cards provide only a block-level interface, or

1610:

technology. Toshiba began marketing flash memory in 1987.

14832: 14827: 14802: 14775: 14602: 14101:"Samsung Starts Mass Production of QLC V-NAND-Based SSDs" 12244: 11909:"Computer data storage unit conversion - non-SI quantity" 11488: 11331:"SanDisk Begins Mass Production of X4 Flash Memory Chips" 8867: 8865: 8863: 8822: 8344: 7973: 7797: 7684: 6969:

11.4 a 512Gb 3b/Cell 64-stacked WL 3D V-NAND flash memory

6596: 3522: 3146: 3099: 2971:

strategies are often used: memory contents must first be

2851: 2580: 2532: 2293: 2052: 1981: 1973: 1857:

Toshiba commercially launched NAND flash memory in 1987.

1791: 1659: 1281: 1168: 938: 13678:

Future memory technology including emerging new memories

12909: 12490:"8-Bit AVR Microcontroller ATmega32A Datasheet Complete" 8081:(3). Korean Institute of Metals and Materials: 175–183. 4485:

billion units as of 2012. This adds up to at least 151.1

2948:

are the most commonly used ECC for SLC NAND flash.

2679:

devices, where one memory cell holds more than one bit.

2202:

in most kinds of flash memory) or non-conductive (as in

1822:

in 1974. And further developed between 1976 and 1978 by

30:"FlashROM" redirects here. For programming utility, see 13714: 12053:

20 July 2009, Kingston DataTraveler 300 is 256 GB.

11963:"Samsung announces 40 nm Flash, predicts 20 nm devices" 10150:"NAND Flash Design and Use Considerations Introduction" 9662:"Samsung moves into mass production of 3D flash memory" 9378: 9278: 9158:

Micheloni, Rino; Marelli, Alessia; Eshghi, Kam (2012),

8260: 3834:

For relational databases or other systems that require

3562:

which are somewhat larger than conventional prefixes .

3034:

A mechanism for self-identification (comparable to the

2638:

Minimum bit cost of 3D NAND from non-vertical sidewall.

2579:

geometry (which was commercially introduced in 2002 by

2563:

in 2007. V-NAND was first commercially manufactured by

2220:

In flash memory, each memory cell resembles a standard

2071:

used in conventional flash memory designs. In 2000, an

1818:

to erase data was invented by Bernward and patented by

1718:

a system required a significant amount of non-volatile

13185: 12656: 12156: 11004: 10863: 10779:

RAJARAMAN, V.; ADABALA, NEEHARIKA (15 December 2014).

10670: 10342: 9157: 8860: 8144:"Overview of emerging nonvolatile memory technologies" 7637: 7299: 7297: 7295: 7293: 7090:

Advances in Non-Volatile Memory and Storage Technology

1916:

The first NAND-based removable memory card format was

13754: 13515: 13513: 13511: 13509: 13507: 13505: 13478: 13476: 13474: 13472: 13470: 12773:"NAND Revenue by Manufacturers Worldwide (2014-2022)" 12741:"Former Toshiba memory business to rebrand as Kioxia" 11611: 11581: 11551: 11521: 10890: 10391: 10389: 10273:"Impact of X-Ray Inspection on Spansion Flash Memory" 10024: 8254: 7665:

The flash memory can be reprogrammed up to 100 times.

2195:(TLC) devices, can store more than one bit per cell. 1959:

NAND flash has achieved significant levels of memory

13330: 13052: 12517: 11650:"QLC NAND - What can we expect from the technology?" 10214: 9442:"Space Radiation Effects in Advanced Flash Memories" 9221:

Takeuchi, K. (2010). "Low power 3D-integrated SSD".

8948:

Engineering Gate Stacks for Field-Effect Transistors

6936: 6934: 6932: 6930: 6824:"HDD vs SSD: What Does the Future for Storage Hold?" 3529:

because they are manufactured with many of the same

2300:

gate Flash memory) occurs due to the extremely high

1920:, released in 1995. Many others followed, including 1839:. Masuoka and colleagues presented the invention of 1741:

per package using 16 stacked dies and an integrated

14191: 14092: 13636: 13594:"Samsung Mass Producing 128Gb 3-bit MLC NAND Flash" 13548: 13546: 13544: 13542: 13402: 13306:"Who was the storage dollar daddy in 2017? S. S. D" 13260: 12179: 11705: 10970: 10755:

Silicon Based Unified Memory Devices and Technology

10634: 10374:"What Types of ECC Should Be Used on Flash Memory?" 9611: 9058: 8223: 8194: 7290: 6846:"Memory Module Serial Presence-Detect Introduction" 2448:, but they are connected in a way that resembles a 2397:to a binary "0" value, by the following procedure: 2090: 1944:A new generation of memory card formats, including 54:in 2005. The chip on the left is flash memory. The 14529:'s NAND flash SSD business and renamed it Solidigm 14233:"Samsung produces 1TB eUFS memory for smartphones" 14125: 13902:(Press release). Las Vegas, Nv. and Tokyo, Japan: 13790: 13502: 13467: 13297: 11885:. The Daily Circuit. 22 April 2012. Archived from 11773: 11757:"Samsung Announces QLC SSDs And Second-Gen Z-NAND" 11168:"BENAND | TOSHIBA MEMORY | Europe(EMEA)" 10468:"LPC313x NAND flash data and bad block management" 10386: 10318:"Samsung 32GB USB 3.0 Flash Drive FIT MUF-32BB/AM" 10092: 9738: 9702: 9286: 9096: 8443:"Toshiba announces new "3D" NAND flash technology" 8322:. US Patent & Trademark Office. Archived from 8141: 7944: 7942: 7940: 7938: 7907: 7905: 7903: 7722: 6959: 3489:In practice, flash file systems are used only for 2272:is applied to the CG. If the channel conducts at V 1805: 14279: 14249: 14158: 14062: 13969:"Toshiba announces 1 gigabyte CompactFlash™ card" 13961: 13892: 13856: 13826: 13682:Institute of Electrical and Electronics Engineers 13084: 13060:"Samsung to unveil new mass-storage memory cards" 12003: 11981: 11818: 11796: 10612: 10292:"SanDisk Extreme PRO SDHC/SDXC UHS-I Memory Card" 9841: 9396:Institute of Electrical and Electronics Engineers 8338: 8135: 8052:Institute of Electrical and Electronics Engineers 7365: 6927: 6902: 6815: 6779: 3104:NOR and NAND flash differ in two important ways: 2460:emulation), which access only one bit at a time. 2435:NAND flash memory wiring and structure on silicon 2222:metal–oxide–semiconductor field-effect transistor 2121:) introduced 24-layer 3D IC technology, with a 16 1873:. This makes it a suitable replacement for older 1786:) that is both non-volatile and re-programmable. 14941: 14034:"e.MMC 4.41 Specification compatibility Rev 1.1" 14026: 13927: 13925: 13587: 13585: 13539: 13263:"IDC White Paper: The Digitization of the World" 13149: 12460:"Understanding Life Expectancy of Flash Storage" 12301: 11660: 10926:, Micron, pp. 2–3, TN-29-19, archived from 10778: 10728:The Facts on File Dictionary of Computer Science 10450:"Small-Block vs. Large-Block NAND flash Devices" 10442: 10368: 10366: 10142: 10078:"Taiwan engineers defeat limits of flash memory" 10046: 9680: 9463: 8759: 8497: 8495: 6757: 3917: 3414:In development by SK Hynix (formerly Intel) and 2363:NOR flash memory wiring and structure on silicon 14224: 12851: 12849: 12847: 12845: 12808: 12806: 12804: 12802: 12800: 12798: 12796: 12794: 12792: 12790: 12732: 12604:Journal of International Commerce and Economics 11824: 11641: 10964: 9196: 8789: 7935: 7900: 7785: 6965: 6765:"A Flash Storage Technical and Economic Primer" 2198:The floating gate may be conductive (typically 1584:. Both use the same cell design, consisting of 27:Electronic non-volatile computer storage device 13996: 13994: 12495:. 19 February 2016. p. 18. Archived from 12424: 12376: 12152: 12150: 11748: 10725:Daintith, John; Wright, Edmund (14 May 2014). 10724: 10430:. 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PR1701. 8279:10.1109/IEDM.1991.235443 7725:3D ICs in the real world 7721:James, Dick (May 2014). 7604:10.1109/IEDM.1987.191485 7565:10.1109/IEDM.1984.190752 6545:USB flash drive security 4073:Flash memory shipments ( 3461:memory over-provisioning 3142:, not to replace ROMs. 2422:of the opposite polarity 1843:flash in 1984, and then 1669:Flash memory is used in 1606:in 1980 and is based on 1598:memory, was invented by 1594:Flash memory, a type of 1399:DNA digital data storage 1382:Holographic data storage 871:Solid-state hybrid drive 157:Network-attached storage 14950:20th-century inventions 14435:Flash memory controller 14346:Flash endurance testing 14334:31 October 2012 at the 14322:22 October 2018 at the 13886:Smithsonian Institution 13820:Smithsonian Institution 13379:. Embedded World 2015. 12836:Smithsonian Institution 10977:Proceedings of the IEEE 10731:. Infobase Publishing. 10529:"Samsung ECC algorithm" 10428:Proceedings of the IEEE 9123:10.1145/1594233.1594253 8970:University of Minnesota 8161:10.1186/1556-276x-9-526 8043:Proceedings of the IEEE 7313:Computer History Museum 6540:Universal Flash Storage 6487:Flash memory controller 4887:Memory Package Capacity 4572:ITRS Flash Roadmap 2011 4224:134,217,728,000 (NAND) 2783:Most flash ICs come in 2688:flash translation layer 2628: 2167:Principles of operation 1828:Hughes Aircraft Company 1625:flash memory controller 1394:5D optical data storage 1211:3D optical data storage 934:Universal Flash Storage 339:Replication (computing) 284:Distributed file system 174:Single-instance storage 152:Direct-attached storage 132:Continuous availability 14859:JEDEC / JC-42, JC-64.8 13762:"DD28F032SA Datasheet" 13451:. 2012. Archived from 10534:. Samsung. June 2008. 9254:Mozel, Tracey (2009), 3993:Semiconductor industry 3794: 3638: 3572:error correction codes 2977:memory management unit 2843: 2703: 2641: 2548: 2436: 2409:hot-electron injection 2393: 2385: 2364: 2176: 2073:Advanced Micro Devices 1724:serial presence detect 1267:Nintendo optical discs 484:Storage virtualization 354:Information repository 294:Distributed data store 59: 14847:Related organizations 14287:"UFS 4.0 Infographic" 13938:Samsung Semiconductor 13448:Cypress Semiconductor 6607:(up to 4-bit or half- 6524:NOR flash replacement 6492:Intel hex file format 4473:, which have sold 150 4321:7,692,307,692 (NAND) 3792: 3636: 3581:In 2005, Toshiba and 3071:pin-to-pin compatible 2893:error correcting code 2877:error correcting code 2841: 2773:error-correcting code 2701: 2684:USB flash drives 2636: 2546: 2444:NAND flash also uses 2434: 2391: 2383: 2362: 2326:Internal charge pumps 2174: 2096:3D integrated circuit 2057:Saifun Semiconductors 1679:digital audio players 770:Mellon optical memory 758:Williams–Kilburn tube 474:Locality of reference 279:Clustered file system 105:Memory access pattern 70:computer data storage 49: 14776:Universal Serial Bus 14770:Serial attached SCSI 14356:Type of Flash Memory 13684:. pp. 377–384. 13443:"2011 Annual Report" 13002:. 30 December 2008. 12531:. 29 December 2013. 12021:on 19 December 2008. 11999:on 19 December 2008. 11126:on 1 September 2018. 10630:on 25 December 2015. 10379:4 March 2016 at the 10278:4 March 2016 at the 10188:Kawamatus, Tatsuya. 9447:4 March 2016 at the 9225:. pp. 515–536. 8944:"2.1.1 Flash Memory" 8921:on 31 October 2009, 8572:. 5 September 2007. 8273:. pp. 303–306. 8011:. pp. 209–244. 7694:on 24 September 2015 7598:. pp. 552–555. 6979:. pp. 202–203. 6787:"Flash Memory Guide" 4881:Date of introduction 4759:24 nm (Toshiba) 4525:floating-gate MOSFET 4099:Floating-gate MOSFET 4077:manufactured units) 4064:Electronics industry 3570:), for sparing, for 3013:) for NAND flash in 2708:absolute temperature 2216:Floating-gate MOSFET 2210:Floating-gate MOSFET 1899:data storage devices 1735:through-silicon vias 1573:, are named for the 1466:Magnetic-core memory 1113:Digital Data Storage 1073:Quadruplex videotape 514:In-memory processing 404:Information transfer 299:Distributed database 162:Storage area network 142:Block (data storage) 14965:Non-volatile memory 14960:Japanese inventions 14504:Flash manufacturers 14495:Write amplification 14480:Solid-state storage 14263:. 30 January 2019. 14041:Samsung Electronics 13162:Nikkei Asian Review 12892:Electronic Business 12257:elitepcbuilding.com 11942:on 24 December 2008 11889:on 24 November 2012 11863:on 12 November 2011 11701:on 30 January 2019. 11333:. 17 February 2012. 10897:. Springer Nature. 10594:"Membership - ONFi" 10036:Kingston Technology 9571:2002IJSSC..37.1318T 9404:2011IJSSC..46.1478I 9305:2010IEITE..93..317Y 9170:2013issd.book.....M 9115:2010IEITE..93..317Y 8777:on 1 September 2017 8727:www.theregister.com 8708:www.theregister.com 8667:www.theregister.com 8365:2000IEDL...21..184F 8326:on 22 February 2020 8087:2011EML.....7..175L 8009:Springer Publishing 7955:Samsung Electronics 7919:. 13 October 2009. 7804:on 18 October 2020. 7247:1960JPCS...14..131L 7094:Woodhead Publishing 6796:. 2012. MKF-283US. 6794:Kingston Technology 6658:non-volatile memory 6624:shipments in 2010: 6550:Write amplification 5295:Hitachi, Mitsubishi 5180:Mitsubishi, Hitachi 4078: 4021:Samsung Electronics 3930:" or "bit fading". 3906:Flash memory as RAM 3843:Samsung Electronics 3726:every power cycle. 3591:Samsung Electronics 3531:integrated circuits 3001:A group called the 2565:Samsung Electronics 2491:Writing and erasing 2175:A flash memory cell 2115:Hynix Semiconductor 2085:Samsung Electronics 2059:(later acquired by 2017:Samsung Electronics 1720:solid-state storage 1707:medical electronics 1703:industrial robotics 1063:Phonograph cylinder 1001:Electrochemical RAM 853:Solid-state storage 469:Memory segmentation 167:Block-level storage 14669:Greenliant Systems 14440:Garbage collection 14396:Solid-state drives 13455:on 16 October 2019 13271:Seagate Technology 13068:. 29 August 2012. 13040:on 16 October 2019 12720:. 29 December 2021 12644:on 8 February 2016 12364:on 15 October 2018 12131:. 11 August 2016. 11293:Crothers, Brooke. 11274:Crothers, Brooke. 11250:"PBlaze4_Memblaze" 10475:NXP Semiconductors 9952:. pp. 37–40. 9837:. pp. 21, 24. 9694:. 9 October 2014. 8841:Electronics Weekly 8269:. Washington, DC: 8232:. pp. 29–62. 7463: Fujio Masuoka 7309:The Storage Engine 7268:Lojek, Bo (2007). 7204:Lojek, Bo (2007). 7167:KAHNG, D. (1961). 6534:Read-mostly memory 5523:STMicroelectronics 4521:electronic devices 4072: 3974:FPGA configuration 3968:Arrhenius equation 3829:garbage collection 3795: 3639: 3475:Flash file systems 3329:1,000 to 3,000 for 2950:Reed-Solomon codes 2844: 2842:NOR flash by Intel 2704: 2642: 2549: 2517:solid-state drives 2511:, as well as most 2437: 2394: 2386: 2365: 2177: 2100:integrated circuit 1997:STMicroelectronics 1940:Later developments 1911:solid-state drives 1796:military equipment 1640:solid-state drives 1472:Plated-wire memory 1437:Paper data storage 1083:Magnetic recording 509:In-memory database 494:Memory-mapped file 439:Volume boot record 434:Master boot record 424:Volume (computing) 399:Data communication 324:Data deduplication 60: 32:Flashrom (utility) 14937: 14936: 14869:NVMHCI Work Group 14712:SSD manufacturers 14707: 14706: 14465:Over-provisioning 14420:Flash file system 14259:(Press release). 14175:. San Francisco. 14072:(Press release). 14043:. December 2011. 13971:(Press release). 13876:on 14 August 2023 13699:978-0-7803-8166-7 13527:on 9 January 2015 13490:on 9 January 2015 13098:. 10 April 2013. 13032:(Press release). 12285:. STORAGEsearch. 12263:on 20 August 2011 11810:. 7 August 2018. 11806:(Press release). 11742:StorageSearch.com 11673:Micron Technology 11671:(Press release). 11462:Vättö, Kristian. 11429:Vättö, Kristian. 11396:Vättö, Kristian. 11363:Vättö, Kristian. 11208:on 1 January 2019 11178:on 1 January 2019 11148:on 1 January 2019 11096:on 1 January 2019 11062:. 20 March 2012. 11045:978-3-540-74472-6 11018:978-90-481-9431-5 10957:978-90-481-9216-8 10845:978-3-319-76096-4 10711:978-94-007-6082-0 10452:(PDF). TN-29-07. 10399:(Press release). 10356:978-90-481-9431-5 10232:Micron Technology 10157:Micron Technology 10059:Micron Technology 10038:. February 2022. 9967:978-1-4673-4743-3 9808:978-1-7281-6558-5 9690:(Press release). 9604:978-94-007-6082-0 9565:(10): 1318–1325. 9539:978-90-481-9216-8 9513:978-3-030-79827-7 9476:Memory Designline 9363:978-1-4244-6721-1 9240:978-90-481-9430-8 9072:. 17 April 2018. 9020:Electronics Notes 8976:on 8 August 2022. 8689:www.anandtech.com 8634:(Press release). 8601:(Press release). 8533:(Press release). 8488:on 14 April 2019. 8480:(Press release). 8373:10.1109/55.830976 8247:978-94-017-7512-0 8226:3D Flash Memories 8026:978-3-319-55306-1 7986:Electronic Design 7880:(Press release). 7796:(Press release). 7744:978-1-4799-3944-2 7497:on 18 August 2014 7215:978-3-540-34258-8 7190:978-981-02-0209-5 7154:10.1149/1.2428650 7065:. 11 March 2006. 6994:978-1-5090-3758-2 6975:. San Francisco: 6889:Texas Instruments 6853:Micron Technology 6675:Solid-state drive 6603:) up until 2009. 6593:Single-level cell 6556:Explanatory notes 6473: 6472: 4829: 4828: 4638:(Samsung 3D NAND) 4517:scaled technology 4501:Flash scalability 4455: 4454: 4447:2,321,421,837,044 4381:463,280,000,000+ 4363:296,400,000,000+ 4345:200,000,000,000+ 4327:170,000,000,000+ 4313:118,000,000,000+ 4045:Micron Technology 3926:, also known as " 3803:solid-state drive 3785:Solid-state drive 3709:Micron Technology 3481:Flash file system 3453: 3452: 3449:Numonyx J3 flash 3428:100,000–1,000,000 3272: 3271: 3237:Random read speed 3052:Micron Technology 2720:Micron Technology 2577:charge trap flash 2553:charge trap flash 2519:available today. 2252:) and the higher 2234:threshold voltage 2193:triple-level cell 2185:single-level cell 2038:Charge trap flash 2033:Charge trap flash 2027:Charge trap flash 2021:triple-level cell 1859:Intel Corporation 1837:flash of a camera 1547: 1546: 1144:8 mm video format 1068:Phonograph record 887:Flash Core Module 865:Solid-state drive 764:Delay-line memory 723:Computational RAM 626:Scratchpad memory 464:Disk partitioning 189:Unstructured data 115:Secondary storage 16:(Redirected from 14977: 14925: 14924: 14793:HDD form factors 14561: 14560: 14460:Open-channel SSD 14389: 14382: 14375: 14366: 14365: 14305: 14304: 14302: 14291: 14283: 14277: 14276: 14274: 14272: 14253: 14247: 14246: 14228: 14222: 14221: 14219: 14217: 14195: 14189: 14188: 14186: 14184: 14162: 14156: 14155: 14153: 14151: 14129: 14123: 14122: 14120: 14118: 14096: 14090: 14089: 14087: 14085: 14076:. 28 June 2017. 14066: 14060: 14059: 14057: 14055: 14049: 14038: 14030: 14024: 14023: 14021: 14019: 14010:. Archived from 14002:"History: 2010s" 13998: 13989: 13988: 13986: 13984: 13979:on 11 March 2006 13965: 13959: 13958: 13956: 13954: 13929: 13920: 13919: 13917: 13915: 13896: 13890: 13889: 13883: 13881: 13875: 13868: 13860: 13854: 13853: 13851: 13849: 13830: 13824: 13823: 13817: 13815: 13810:on 19 April 2023 13809: 13802: 13794: 13788: 13787: 13785: 13783: 13777: 13766: 13758: 13752: 13751: 13749: 13747: 13742:on 9 August 2007 13741: 13726: 13718: 13712: 13711: 13673: 13667: 13666: 13664: 13662: 13640: 13634: 13633: 13622: 13616: 13615: 13613: 13611: 13602:. Archived from 13589: 13580: 13579: 13577: 13575: 13569: 13558: 13550: 13537: 13536: 13534: 13532: 13517: 13500: 13499: 13497: 13495: 13480: 13465: 13464: 13462: 13460: 13439: 13433: 13432: 13430: 13428: 13406: 13400: 13399: 13397: 13395: 13389: 13378: 13367: 13358: 13357: 13351: 13349: 13334: 13328: 13327: 13325: 13323: 13301: 13295: 13294: 13292: 13290: 13284: 13267: 13258: 13249: 13248: 13228: 13222: 13221: 13219: 13217: 13197: 13189: 13183: 13182: 13180: 13178: 13153: 13147: 13146: 13144: 13142: 13122: 13116: 13115: 13109: 13107: 13088: 13082: 13081: 13079: 13077: 13056: 13050: 13049: 13047: 13045: 13022: 13016: 13015: 13013: 13011: 12992: 12986: 12985: 12983: 12981: 12959: 12950: 12949: 12947: 12945: 12939: 12922: 12916:Sze, Simon Min. 12913: 12907: 12906: 12884: 12878: 12877: 12853: 12840: 12839: 12833: 12831: 12825: 12818: 12810: 12785: 12784: 12782: 12780: 12769: 12763: 12762: 12760: 12758: 12739:Kwan, Campbell. 12736: 12730: 12729: 12727: 12725: 12710: 12704: 12703: 12701: 12699: 12683: 12677: 12676: 12660: 12654: 12653: 12651: 12649: 12640:. Archived from 12629: 12623: 12622: 12620: 12618: 12612: 12606:. Archived from 12601: 12592: 12586: 12585: 12583: 12575: 12569: 12568: 12566: 12564: 12558: 12551: 12543: 12537: 12536: 12521: 12515: 12514: 12509: 12507: 12501: 12494: 12486: 12480: 12479: 12477: 12475: 12466:. 23 July 2020. 12456: 12447: 12446: 12428: 12422: 12421: 12419: 12417: 12408:. Archived from 12402: 12396: 12395: 12390:. 27 June 2006. 12380: 12374: 12373: 12371: 12369: 12354: 12348: 12347: 12345: 12343: 12324: 12318: 12317: 12316:on 3 March 2016. 12312:. Archived from 12305: 12299: 12298: 12296: 12294: 12279: 12273: 12272: 12270: 12268: 12259:. Archived from 12248: 12242: 12230: 12224: 12219:Clive Maxfield. 12217: 12208: 12207: 12205: 12203: 12194:. Archived from 12183: 12177: 12176: 12174: 12163: 12154: 12145: 12144: 12142: 12140: 12129:Custom PC Review 12121: 12115: 12114: 12112: 12110: 12101:. 13 July 2016. 12099:Custom PC Review 12091: 12085: 12084: 12082: 12080: 12060: 12054: 12052: 12050: 12048: 12039:. 20 July 2009. 12029: 12023: 12022: 12007: 12001: 12000: 11985: 11979: 11978: 11976: 11974: 11969:on 23 March 2008 11958: 11952: 11951: 11949: 11947: 11931: 11925: 11924: 11922: 11920: 11905: 11899: 11898: 11896: 11894: 11879: 11873: 11872: 11870: 11868: 11862: 11855: 11847: 11841: 11840: 11822: 11816: 11815: 11800: 11794: 11793: 11777: 11771: 11770: 11752: 11746: 11745: 11734: 11728: 11727: 11709: 11703: 11702: 11697:. Archived from 11687: 11681: 11680: 11664: 11658: 11657: 11645: 11639: 11638: 11636: 11634: 11629:on 27 March 2019 11625:. Archived from 11615: 11609: 11608: 11606: 11604: 11599:on 27 March 2019 11595:. Archived from 11585: 11579: 11578: 11576: 11574: 11569:on 28 March 2019 11565:. Archived from 11555: 11549: 11548: 11546: 11544: 11539:on 28 March 2019 11535:. Archived from 11525: 11519: 11518: 11516: 11514: 11492: 11486: 11485: 11483: 11481: 11459: 11453: 11452: 11450: 11448: 11426: 11420: 11419: 11417: 11415: 11393: 11387: 11386: 11384: 11382: 11360: 11354: 11353: 11341: 11335: 11334: 11327: 11321: 11320: 11309: 11303: 11302: 11290: 11284: 11283: 11271: 11265: 11264: 11262: 11260: 11246: 11240: 11239: 11227: 11218: 11217: 11215: 11213: 11204:. Archived from 11194: 11188: 11187: 11185: 11183: 11174:. Archived from 11164: 11158: 11157: 11155: 11153: 11144:. Archived from 11134: 11128: 11127: 11122:. Archived from 11112: 11106: 11105: 11103: 11101: 11092:. Archived from 11082: 11076: 11075: 11073: 11071: 11056: 11050: 11049: 11029: 11023: 11022: 11002: 10996: 10995: 10993: 10991: 10985:10.1109/5.622505 10968: 10962: 10961: 10941: 10935: 10934: 10932: 10925: 10915: 10909: 10908: 10888: 10882: 10881: 10861: 10850: 10849: 10829: 10823: 10822: 10820: 10818: 10803: 10797: 10796: 10776: 10770: 10769: 10749: 10743: 10742: 10722: 10716: 10715: 10695: 10689: 10688: 10668: 10662: 10661: 10659: 10657: 10638: 10632: 10631: 10616: 10610: 10609: 10607: 10605: 10589: 10583: 10582: 10580: 10578: 10572: 10565: 10557: 10551: 10550: 10548: 10546: 10540: 10533: 10525: 10519: 10518: 10516: 10514: 10508: 10501: 10492: 10486: 10485: 10483: 10472: 10464: 10458: 10457: 10446: 10440: 10439: 10423: 10417: 10416: 10414: 10412: 10407:on 11 March 2006 10393: 10384: 10370: 10361: 10360: 10340: 10334: 10333: 10331: 10329: 10314: 10308: 10307: 10305: 10303: 10288: 10282: 10269: 10263: 10249: 10243: 10242: 10240: 10229: 10218: 10212: 10211: 10209: 10207: 10201: 10194: 10185: 10176: 10175: 10173: 10171: 10165: 10154: 10146: 10140: 10139: 10121: 10115: 10114: 10096: 10090: 10089: 10073: 10067: 10066: 10050: 10044: 10043: 10028: 10022: 10021: 10019: 10017: 10011: 10004: 9993: 9987: 9986: 9984: 9982: 9941: 9935: 9929: 9923: 9922: 9920: 9918: 9904: 9902: 9900: 9886: 9880: 9879: 9876:www.linkedin.com 9868: 9862: 9861: 9845: 9839: 9838: 9836: 9827: 9821: 9820: 9793:. pp. 1–3. 9782: 9776: 9775: 9767: 9761: 9760: 9742: 9736: 9735: 9733: 9731: 9726:on 27 March 2016 9725: 9714: 9706: 9700: 9699: 9684: 9678: 9677: 9675: 9673: 9658: 9639: 9638: 9636: 9634: 9615: 9609: 9608: 9589: 9583: 9582: 9550: 9544: 9543: 9524: 9518: 9517: 9498: 9492: 9491: 9489: 9487: 9467: 9461: 9440:A. H. Johnston, 9438: 9432: 9431: 9382: 9376: 9375: 9341: 9335: 9334: 9327: 9321: 9320: 9290: 9282: 9276: 9275: 9251: 9245: 9244: 9218: 9194: 9188: 9187: 9155: 9149: 9148: 9100: 9092: 9086: 9085: 9083: 9081: 9062: 9056: 9055: 9037: 9028: 9027: 9012: 9006: 9005: 8987: 8978: 8977: 8972:. Archived from 8962: 8956: 8955: 8939: 8933: 8932: 8920: 8913: 8902: 8896: 8895: 8893: 8891: 8869: 8858: 8857: 8855: 8853: 8831: 8820: 8819: 8817: 8815: 8793: 8787: 8786: 8784: 8782: 8763: 8757: 8756: 8754: 8752: 8737: 8731: 8730: 8718: 8712: 8711: 8699: 8693: 8692: 8680: 8671: 8670: 8658: 8652: 8651: 8649: 8647: 8628: 8619: 8618: 8616: 8614: 8595: 8586: 8585: 8583: 8581: 8560: 8551: 8550: 8548: 8546: 8527: 8518: 8517: 8499: 8490: 8489: 8474: 8465: 8464: 8462: 8460: 8438: 8429: 8428: 8426: 8424: 8402: 8393: 8392: 8342: 8336: 8335: 8333: 8331: 8315: 8309: 8308: 8258: 8252: 8251: 8221: 8215: 8214: 8198: 8192: 8191: 8181: 8163: 8139: 8133: 8132: 8116: 8107: 8106: 8070: 8064: 8063: 8037: 8031: 8030: 8000: 7994: 7993: 7977: 7971: 7970: 7968: 7966: 7946: 7933: 7932: 7930: 7928: 7909: 7898: 7897: 7895: 7893: 7874: 7861: 7860: 7858: 7856: 7837: 7806: 7805: 7789: 7783: 7782: 7771: 7765: 7764: 7728: 7718: 7707: 7706: 7701: 7699: 7693: 7682: 7674: 7668: 7667: 7662: 7660: 7641: 7635: 7634: 7632: 7630: 7621:. Archived from 7614: 7608: 7607: 7583: 7577: 7576: 7548: 7542: 7541: 7539: 7537: 7528:. Archived from 7516: 7507: 7506: 7504: 7502: 7493:. Archived from 7483: 7477: 7476: 7470: 7464: 7462: 7461: 7457: 7451: 7445: 7444: 7436: 7430: 7429: 7421: 7415: 7414: 7413: 7409: 7402: 7396: 7395: 7393: 7391: 7369: 7363: 7362: 7360: 7358: 7338: 7329: 7328: 7326: 7324: 7315:. 11 June 2018. 7301: 7288: 7287: 7265: 7259: 7258: 7226: 7220: 7219: 7201: 7195: 7194: 7164: 7158: 7157: 7133: 7127: 7126: 7125: 7121: 7114: 7108: 7107: 7085: 7079: 7078: 7076: 7074: 7054: 7047: 7038: 7037: 7021: 7015: 7014: 6963: 6957: 6956: 6938: 6925: 6924: 6906: 6900: 6899: 6897: 6886: 6878: 6872: 6871: 6869: 6867: 6861: 6850: 6842: 6836: 6835: 6819: 6813: 6812: 6810: 6808: 6802: 6791: 6783: 6777: 6776: 6775:on 20 July 2015. 6769:FlashStorage.com 6761: 6755: 6754: 6752: 6750: 6733: 6713: 6709: 6702: 6695: 6690: 6684: 6680: 6670: 6663: 6651: 6645: 6641: 6637: 6630: 6618: 6612: 6605:Multi-level cell 6590: 5993:Toshiba, SanDisk 5695:Samsung, Toshiba 5635:Toshiba, SanDisk 5349:Samsung, Hitachi 4900:Stacks of Layers 4878: 4877: 4808:20 nm (MLC) 4534: 4533: 4496: 4492: 4488: 4484: 4476: 4465:(MCU) chips and 4450: 4378:231,640,000,000 4360:148,200,000,000 4342:100,000,000,000 4079: 4076: 4071: 4068:Transistor count 3961:An article from 3956:error correction 3730:Firmware storage 3587:multi-level cell 3574:, and for other 3556: 3547:decimal prefixes 3507:USB flash drives 3374: 3345:Samsung SSD 840 3327:medium-capacity; 3325:5,000–10,000 for 3291:Endurance rating 3283: 3282: 3249:Execute in place 3182:Storage capacity 3171:Main application 3157: 3156: 3149:phones and many 2848:execute in place 2802:Low-level access 2724:Sun Microsystems 2677:multi-level cell 2509:USB flash drives 2499:for writing and 2497:tunnel injection 2495:NAND flash uses 2463: 2462:Execute-in-place 2340:boost converters 2189:Multi-level cell 2159: 2155: 2136: 2132: 2128: 2124: 2112: 2105: 2014: 2002: 1991: 1986:multi-level cell 1970:Multi-level cell 1875:read-only memory 1780:read-only memory 1743:flash controller 1636:USB flash drives 1539: 1532: 1525: 1484:Thin-film memory 1478:Core rope memory 1404:Universal memory 1367:Millipede memory 1357:Racetrack memory 1322:Ultra HD Blu-ray 1134:Linear Tape-Open 1088:Magnetic storage 1056:Analog recording 499:Software entropy 459:Disk aggregation 219:Data degradation 204:Data compression 100:Memory hierarchy 90:Memory coherence 62: 61: 58:is on the right. 39:Flashbulb memory 21: 18:NOR flash memory 14985: 14984: 14980: 14979: 14978: 14976: 14975: 14974: 14955:Computer memory 14940: 14939: 14938: 14933: 14913: 14842: 14781: 14723: 14703: 14657: 14611:(bought by OCZ) 14571:Western Digital 14550: 14536:Western Digital 14499: 14403:Key terminology 14398: 14393: 14336:Wayback Machine 14324:Wayback Machine 14313: 14308: 14300: 14289: 14285: 14284: 14280: 14270: 14268: 14255: 14254: 14250: 14229: 14225: 14215: 14213: 14196: 14192: 14182: 14180: 14163: 14159: 14149: 14147: 14130: 14126: 14116: 14114: 14097: 14093: 14083: 14081: 14068: 14067: 14063: 14053: 14051: 14047: 14036: 14032: 14031: 14027: 14017: 14015: 14000: 13999: 13992: 13982: 13980: 13967: 13966: 13962: 13952: 13950: 13931: 13930: 13923: 13913: 13911: 13898: 13897: 13893: 13879: 13877: 13873: 13866: 13862: 13861: 13857: 13847: 13845: 13832: 13831: 13827: 13813: 13811: 13807: 13800: 13796: 13795: 13791: 13781: 13779: 13775: 13764: 13760: 13759: 13755: 13745: 13743: 13739: 13724: 13720: 13719: 13715: 13700: 13674: 13670: 13660: 13658: 13641: 13637: 13624: 13623: 13619: 13609: 13607: 13606:on 21 June 2019 13590: 13583: 13573: 13571: 13570:on 25 June 2018 13567: 13556: 13552: 13551: 13540: 13530: 13528: 13519: 13518: 13503: 13493: 13491: 13482: 13481: 13468: 13458: 13456: 13441: 13440: 13436: 13426: 13424: 13407: 13403: 13393: 13391: 13387: 13376: 13368: 13361: 13347: 13345: 13336: 13335: 13331: 13321: 13319: 13302: 13298: 13288: 13286: 13282: 13265: 13259: 13252: 13245: 13229: 13225: 13215: 13213: 13190: 13186: 13176: 13174: 13155: 13154: 13150: 13140: 13138: 13123: 13119: 13105: 13103: 13090: 13089: 13085: 13075: 13073: 13065:The Korea Times 13058: 13057: 13053: 13043: 13041: 13024: 13023: 13019: 13009: 13007: 12994: 12993: 12989: 12979: 12977: 12960: 12953: 12943: 12941: 12937: 12920: 12914: 12910: 12886: 12885: 12881: 12874: 12854: 12843: 12829: 12827: 12823: 12816: 12812: 12811: 12788: 12778: 12776: 12771: 12770: 12766: 12756: 12754: 12737: 12733: 12723: 12721: 12712: 12711: 12707: 12697: 12695: 12685: 12684: 12680: 12663:Owen, Malcolm. 12661: 12657: 12647: 12645: 12630: 12626: 12616: 12614: 12610: 12599: 12593: 12589: 12581: 12577: 12576: 12572: 12562: 12560: 12556: 12549: 12545: 12544: 12540: 12523: 12522: 12518: 12505: 12503: 12502:on 9 April 2016 12499: 12492: 12488: 12487: 12483: 12473: 12471: 12458: 12457: 12450: 12429: 12425: 12415: 12413: 12412:on 28 June 2022 12404: 12403: 12399: 12382: 12381: 12377: 12367: 12365: 12356: 12355: 12351: 12341: 12339: 12326: 12325: 12321: 12306: 12302: 12292: 12290: 12281: 12280: 12276: 12266: 12264: 12249: 12245: 12231: 12227: 12218: 12211: 12201: 12199: 12198:on 4 March 2016 12184: 12180: 12172: 12161: 12155: 12148: 12138: 12136: 12123: 12122: 12118: 12108: 12106: 12093: 12092: 12088: 12078: 12076: 12061: 12057: 12046: 12044: 12035: 12030: 12026: 12009: 12008: 12004: 11987: 11986: 11982: 11972: 11970: 11959: 11955: 11945: 11943: 11932: 11928: 11918: 11916: 11907: 11906: 11902: 11892: 11890: 11881: 11880: 11876: 11866: 11864: 11860: 11853: 11849: 11848: 11844: 11823: 11819: 11802: 11801: 11797: 11778: 11774: 11753: 11749: 11736: 11735: 11731: 11712:Tallis, Billy. 11710: 11706: 11689: 11688: 11684: 11665: 11661: 11646: 11642: 11632: 11630: 11617: 11616: 11612: 11602: 11600: 11587: 11586: 11582: 11572: 11570: 11557: 11556: 11552: 11542: 11540: 11527: 11526: 11522: 11512: 11510: 11493: 11489: 11479: 11477: 11460: 11456: 11446: 11444: 11427: 11423: 11413: 11411: 11394: 11390: 11380: 11378: 11361: 11357: 11344:Tallis, Billy. 11342: 11338: 11329: 11328: 11324: 11311: 11310: 11306: 11291: 11287: 11272: 11268: 11258: 11256: 11248: 11247: 11243: 11228: 11221: 11211: 11209: 11196: 11195: 11191: 11181: 11179: 11166: 11165: 11161: 11151: 11149: 11136: 11135: 11131: 11114: 11113: 11109: 11099: 11097: 11084: 11083: 11079: 11069: 11067: 11058: 11057: 11053: 11046: 11030: 11026: 11019: 11003: 10999: 10989: 10987: 10969: 10965: 10958: 10942: 10938: 10930: 10923: 10917: 10916: 10912: 10905: 10889: 10885: 10878: 10862: 10853: 10846: 10830: 10826: 10816: 10814: 10804: 10800: 10793: 10777: 10773: 10766: 10750: 10746: 10739: 10723: 10719: 10712: 10696: 10692: 10685: 10669: 10665: 10655: 10653: 10648:. 30 May 2007. 10640: 10639: 10635: 10618: 10617: 10613: 10603: 10601: 10592: 10590: 10586: 10576: 10574: 10573:on 27 July 2011 10570: 10563: 10559: 10558: 10554: 10544: 10542: 10538: 10531: 10527: 10526: 10522: 10512: 10510: 10506: 10499: 10493: 10489: 10481: 10470: 10466: 10465: 10461: 10448: 10447: 10443: 10424: 10420: 10410: 10408: 10395: 10394: 10387: 10381:Wayback Machine 10371: 10364: 10357: 10341: 10337: 10327: 10325: 10316: 10315: 10311: 10301: 10299: 10290: 10289: 10285: 10280:Wayback Machine 10271:Richard Blish. 10270: 10266: 10260:Wayback Machine 10251:Richard Blish. 10250: 10246: 10238: 10227: 10219: 10215: 10205: 10203: 10199: 10192: 10186: 10179: 10169: 10167: 10163: 10152: 10148: 10147: 10143: 10122: 10118: 10097: 10093: 10074: 10070: 10051: 10047: 10030: 10029: 10025: 10015: 10013: 10009: 10002: 9994: 9990: 9980: 9978: 9968: 9942: 9938: 9930: 9926: 9916: 9914: 9906: 9898: 9896: 9888: 9887: 9883: 9870: 9869: 9865: 9846: 9842: 9834: 9828: 9824: 9809: 9783: 9779: 9768: 9764: 9743: 9739: 9729: 9727: 9723: 9712: 9708: 9707: 9703: 9686: 9685: 9681: 9671: 9669: 9660: 9659: 9642: 9632: 9630: 9625:. 7 June 2018. 9617: 9616: 9612: 9605: 9591: 9590: 9586: 9551: 9547: 9540: 9526: 9525: 9521: 9514: 9500: 9499: 9495: 9485: 9483: 9468: 9464: 9449:Wayback Machine 9439: 9435: 9383: 9379: 9364: 9342: 9338: 9329: 9328: 9324: 9283: 9279: 9268: 9252: 9248: 9241: 9219:In particular, 9211: 9195: 9191: 9180: 9156: 9152: 9133: 9093: 9089: 9079: 9077: 9064: 9063: 9059: 9038: 9031: 9014: 9013: 9009: 8988: 8981: 8964: 8963: 8959: 8942:Windbacher, T. 8940: 8936: 8918: 8911: 8903: 8899: 8889: 8887: 8870: 8861: 8851: 8849: 8832: 8823: 8813: 8811: 8794: 8790: 8780: 8778: 8765: 8764: 8760: 8750: 8748: 8738: 8734: 8721:Mellor, Chris. 8719: 8715: 8702:Mellor, Chris. 8700: 8696: 8683:Tallis, Billy. 8681: 8674: 8661:Mellor, Chris. 8659: 8655: 8645: 8643: 8630: 8629: 8622: 8612: 8610: 8597: 8596: 8589: 8579: 8577: 8569:The Korea Times 8562: 8561: 8554: 8544: 8542: 8529: 8528: 8521: 8500: 8493: 8476: 8475: 8468: 8458: 8456: 8439: 8432: 8422: 8420: 8403: 8396: 8343: 8339: 8329: 8327: 8316: 8312: 8289: 8259: 8255: 8248: 8222: 8218: 8199: 8195: 8140: 8136: 8117: 8110: 8071: 8067: 8038: 8034: 8027: 8001: 7997: 7978: 7974: 7964: 7962: 7948: 7947: 7936: 7926: 7924: 7911: 7910: 7901: 7891: 7889: 7876: 7875: 7864: 7854: 7852: 7839: 7838: 7809: 7790: 7786: 7773: 7772: 7768: 7745: 7719: 7710: 7697: 7695: 7691: 7680: 7676: 7675: 7671: 7658: 7656: 7643: 7642: 7638: 7628: 7626: 7625:on 28 July 2010 7615: 7611: 7584: 7580: 7549: 7545: 7535: 7533: 7532:on 20 June 2019 7518: 7517: 7510: 7500: 7498: 7485: 7484: 7480: 7472: 7471: 7467: 7459: 7453: 7452: 7448: 7437: 7433: 7422: 7418: 7411: 7404: 7403: 7399: 7389: 7387: 7374:"How ROM Works" 7370: 7366: 7356: 7354: 7339: 7332: 7322: 7320: 7303: 7302: 7291: 7284: 7276:. p. 120. 7266: 7262: 7227: 7223: 7216: 7202: 7198: 7191: 7165: 7161: 7134: 7130: 7123: 7115: 7111: 7104: 7086: 7082: 7072: 7070: 7049: 7048: 7041: 7022: 7018: 6995: 6964: 6960: 6939: 6928: 6907: 6903: 6895: 6884: 6880: 6879: 6875: 6865: 6863: 6859: 6848: 6844: 6843: 6839: 6820: 6816: 6806: 6804: 6800: 6789: 6785: 6784: 6780: 6763: 6762: 6758: 6748: 6746: 6745:. 11 April 2012 6735: 6734: 6725: 6721: 6716: 6707: 6700: 6691: 6687: 6678: 6661: 6652: 6648: 6635: 6628: 6619: 6615: 6591: 6562: 6558: 6478: 4903:Manufacturer(s) 4899: 4888: 4876: 4862: 4791: 4786: 4781: 4776: 4766: 4758: 4737: 4732: 4727: 4722: 4714: 4709: 4678: 4673: 4664: 4651: 4637: 4513: 4503: 4494: 4490: 4486: 4482: 4474: 4463:microcontroller 4451:billion+ cells 4448: 4324:85,000,000,000 4310:59,000,000,000 4279:5,151,515,152 ( 4263:7,280,000,000+ 4210:12,800,000,000 4085:Discrete flash 4070: 4060: 4014: 4006:Main articles: 4004: 3995: 3989: 3976: 3952:data redundancy 3936: 3920: 3908: 3813:architectures. 3787: 3781: 3769:expansion cards 3732: 3648:embedded system 3631: 3626: 3617: 3560:binary prefixes 3554: 3519: 3483: 3477: 3442: 3432: 3424: 3372: 3367:Samsung Z-NAND 3330: 3328: 3326: 3292: 3287: 3277: 3275:Write endurance 3177:Code execution 3102: 2999: 2997:Standardization 2994: 2885: 2836: 2804: 2785:ball grid array 2781: 2764: 2716: 2696: 2656: 2651: 2631: 2622: 2606: 2589:silicon nitride 2573: 2541: 2493: 2475: 2471: 2461: 2455: 2442: 2418: 2378: 2357: 2328: 2316: 2310: 2291: 2287: 2283: 2279: 2275: 2271: 2267: 2263: 2259: 2251: 2243: 2239: 2218: 2212: 2206:flash memory). 2169: 2157: 2153: 2134: 2130: 2126: 2122: 2110: 2103: 2093: 2035: 2029: 2012: 2000: 1989: 1942: 1934:xD-Picture Card 1871:memory location 1832:George Perlegos 1824:Eliyahou Harari 1808: 1756: 1751: 1683:digital cameras 1560:computer memory 1543: 1514: 1513: 1432: 1424: 1423: 1377:Patterned media 1347: 1339: 1338: 1206: 1196: 1195: 1191:Hard disk drive 1058: 1048: 1047: 1028: 1017: 1016: 971: 961: 960: 882:IBM FlashSystem 877:USB flash drive 816: 799: 798: 753: 745: 744: 733:Dual-ported RAM 611: 594: 593: 554:Cloud computing 414:Copy protection 334:Data redundancy 264:Shared resource 234:Data validation 209:Data corruption 184:Structured data 95:Cache coherence 80: 66:Computer memory 52:USB flash drive 50:A disassembled 42: 35: 28: 23: 22: 15: 12: 11: 5: 14983: 14973: 14972: 14967: 14962: 14957: 14952: 14935: 14934: 14932: 14931: 14918: 14915: 14914: 14912: 14911: 14906: 14901: 14896: 14891: 14886: 14881: 14876: 14871: 14866: 14861: 14856: 14850: 14848: 14844: 14843: 14841: 14840: 14835: 14830: 14825: 14824: 14823: 14813: 14811:expansion card 14805: 14800: 14795: 14789: 14787: 14786:Configurations 14783: 14782: 14780: 14779: 14773: 14767: 14761: 14756: 14750: 14744: 14738: 14731: 14729: 14725: 14724: 14722: 14721: 14715: 14713: 14709: 14708: 14705: 14704: 14702: 14701: 14696: 14691: 14686: 14681: 14676: 14671: 14665: 14663: 14659: 14658: 14656: 14655: 14650: 14649: 14648: 14636: 14635: 14634: 14624: 14619: 14614: 14613: 14612: 14606: 14595: 14594: 14593: 14588: 14583: 14578: 14567: 14565: 14558: 14552: 14551: 14549: 14548: 14543: 14532: 14531: 14530: 14518: 14513: 14507: 14505: 14501: 14500: 14498: 14497: 14492: 14487: 14482: 14477: 14472: 14467: 14462: 14457: 14452: 14447: 14442: 14437: 14432: 14427: 14422: 14417: 14412: 14406: 14404: 14400: 14399: 14392: 14391: 14384: 14377: 14369: 14363: 14362: 14353: 14348: 14343: 14338: 14326: 14312: 14311:External links 14309: 14307: 14306: 14278: 14248: 14231:Mu-Hyun, Cho. 14223: 14190: 14157: 14124: 14091: 14061: 14025: 14014:on 17 May 2021 13990: 13960: 13921: 13891: 13855: 13825: 13789: 13753: 13713: 13698: 13668: 13635: 13617: 13599:Tom's Hardware 13581: 13538: 13501: 13466: 13434: 13401: 13359: 13329: 13296: 13250: 13243: 13223: 13184: 13169:21 July 2016. 13148: 13117: 13083: 13051: 13030:IHS Technology 13017: 12987: 12951: 12933:. p. 41. 12908: 12879: 12872: 12866:. p. 32. 12859:Flash Memories 12841: 12786: 12764: 12731: 12705: 12678: 12655: 12624: 12613:on 29 May 2008 12587: 12570: 12538: 12516: 12481: 12448: 12438:Tom's Hardware 12423: 12397: 12375: 12349: 12319: 12300: 12274: 12243: 12225: 12209: 12178: 12146: 12116: 12086: 12055: 12024: 12002: 11980: 11953: 11926: 11900: 11874: 11842: 11817: 11795: 11772: 11762:Tom's Hardware 11747: 11729: 11704: 11682: 11659: 11640: 11610: 11580: 11550: 11520: 11502:Tom's Hardware 11487: 11454: 11421: 11388: 11355: 11336: 11322: 11304: 11285: 11266: 11241: 11219: 11189: 11159: 11129: 11107: 11077: 11051: 11044: 11024: 11017: 10997: 10963: 10956: 10936: 10933:on 4 June 2016 10910: 10903: 10883: 10876: 10851: 10844: 10824: 10798: 10791: 10771: 10764: 10744: 10737: 10717: 10710: 10690: 10683: 10663: 10633: 10611: 10584: 10552: 10520: 10487: 10459: 10441: 10418: 10385: 10362: 10355: 10335: 10309: 10283: 10264: 10244: 10213: 10202:on 15 May 2018 10177: 10141: 10116: 10091: 10068: 10045: 10023: 9988: 9966: 9936: 9924: 9881: 9863: 9840: 9822: 9807: 9777: 9762: 9737: 9701: 9679: 9640: 9623:hyperstone.com 9610: 9603: 9584: 9545: 9538: 9519: 9512: 9493: 9462: 9433: 9377: 9362: 9336: 9322: 9277: 9266: 9246: 9239: 9209: 9189: 9178: 9150: 9131: 9087: 9070:hyperstone.com 9057: 9029: 9007: 8979: 8957: 8934: 8897: 8859: 8821: 8788: 8758: 8746:Tom's Hardware 8732: 8713: 8694: 8672: 8653: 8620: 8587: 8552: 8519: 8491: 8466: 8430: 8394: 8359:(4): 184–186. 8337: 8310: 8287: 8253: 8246: 8216: 8193: 8134: 8108: 8065: 8032: 8025: 7995: 7972: 7934: 7899: 7862: 7807: 7784: 7766: 7743: 7708: 7669: 7636: 7609: 7578: 7543: 7508: 7478: 7465: 7446: 7431: 7416: 7397: 7364: 7330: 7289: 7282: 7260: 7221: 7214: 7196: 7189: 7159: 7128: 7109: 7102: 7080: 7039: 7016: 6993: 6958: 6926: 6901: 6873: 6837: 6814: 6778: 6756: 6722: 6720: 6717: 6715: 6714: 6712: 6711: 6704: 6699:NAND NVM – 140 6685: 6683: 6682: 6672: 6646: 6644: 6643: 6632: 6613: 6559: 6557: 6554: 6553: 6552: 6547: 6542: 6537: 6531: 6526: 6521: 6509:(up to 2 6504: 6499: 6494: 6489: 6484: 6477: 6474: 6471: 6470: 6468: 6465: 6462: 6459: 6456: 6453: 6450: 6447: 6444: 6440: 6439: 6437: 6434: 6431: 6428: 6425: 6422: 6421:Stacked V-NAND 6419: 6416: 6413: 6410: 6409: 6407: 6404: 6401: 6398: 6396: 6393: 6390: 6387: 6385: 6382: 6381: 6379: 6376: 6373: 6370: 6368: 6365: 6362: 6359: 6356: 6352: 6351: 6349: 6346: 6343: 6340: 6338: 6335: 6332: 6329: 6327: 6324: 6323: 6321: 6318: 6315: 6312: 6310: 6307: 6304: 6301: 6298: 6294: 6293: 6291: 6288: 6285: 6282: 6280: 6277: 6276:Stacked V-NAND 6274: 6271: 6268: 6265: 6264: 6262: 6259: 6256: 6253: 6251: 6248: 6245: 6242: 6240: 6237: 6236: 6234: 6231: 6228: 6225: 6222: 6219: 6216: 6213: 6210: 6206: 6205: 6203: 6200: 6197: 6194: 6192: 6189: 6186: 6183: 6180: 6176: 6175: 6173: 6170: 6167: 6164: 6162: 6159: 6156: 6153: 6151: 6148: 6147: 6145: 6142: 6139: 6136: 6134: 6131: 6128: 6125: 6122: 6118: 6117: 6115: 6112: 6109: 6106: 6104: 6101: 6098: 6095: 6092: 6088: 6087: 6085: 6082: 6079: 6076: 6074: 6071: 6068: 6065: 6062: 6059: 6058: 6056: 6053: 6050: 6047: 6045: 6042: 6040: 6038: 6036: 6033: 6032: 6030: 6027: 6024: 6021: 6019: 6016: 6013: 6010: 6007: 6003: 6002: 6000: 5997: 5994: 5991: 5989: 5986: 5983: 5980: 5978: 5975: 5974: 5972: 5969: 5966: 5963: 5961: 5958: 5955: 5952: 5949: 5945: 5944: 5942: 5939: 5936: 5933: 5931: 5928: 5925: 5922: 5919: 5915: 5914: 5912: 5909: 5906: 5903: 5901: 5898: 5895: 5892: 5889: 5885: 5884: 5882: 5879: 5876: 5873: 5871: 5868: 5865: 5862: 5859: 5855: 5854: 5852: 5850: 5847: 5844: 5841: 5838: 5835: 5832: 5829: 5825: 5824: 5822: 5819: 5816: 5813: 5810: 5807: 5804: 5801: 5798: 5794: 5793: 5791: 5788: 5785: 5782: 5779: 5776: 5773: 5770: 5767: 5763: 5762: 5760: 5758: 5756: 5753: 5750: 5747: 5744: 5741: 5739: 5736: 5735: 5733: 5730: 5727: 5724: 5721: 5718: 5715: 5712: 5709: 5705: 5704: 5702: 5699: 5696: 5693: 5690: 5687: 5684: 5681: 5679: 5676: 5675: 5673: 5670: 5667: 5664: 5661: 5658: 5655: 5652: 5649: 5645: 5644: 5642: 5639: 5636: 5633: 5630: 5628: 5626: 5624: 5622: 5619: 5618: 5616: 5614: 5612: 5609: 5606: 5603: 5600: 5597: 5595: 5592: 5591: 5589: 5586: 5583: 5580: 5577: 5574: 5571: 5568: 5565: 5561: 5560: 5558: 5555: 5552: 5549: 5546: 5543: 5540: 5537: 5535: 5532: 5531: 5529: 5527: 5524: 5521: 5518: 5515: 5512: 5509: 5507: 5504: 5503: 5501: 5498: 5495: 5492: 5489: 5486: 5483: 5480: 5477: 5473: 5472: 5470: 5468: 5465: 5462: 5459: 5456: 5454: 5452: 5450: 5447: 5446: 5444: 5441: 5438: 5435: 5432: 5429: 5426: 5423: 5420: 5416: 5415: 5413: 5411: 5408: 5405: 5402: 5399: 5396: 5394: 5392: 5389: 5388: 5386: 5383: 5380: 5377: 5374: 5371: 5368: 5365: 5362: 5358: 5357: 5355: 5353: 5350: 5347: 5344: 5341: 5338: 5335: 5333: 5330: 5329: 5327: 5325: 5323: 5320: 5317: 5314: 5312: 5310: 5308: 5305: 5304: 5302: 5299: 5296: 5293: 5290: 5287: 5284: 5281: 5278: 5274: 5273: 5271: 5269: 5267: 5264: 5261: 5258: 5255: 5252: 5250: 5247: 5246: 5244: 5241: 5238: 5235: 5232: 5229: 5226: 5223: 5221: 5218: 5217: 5215: 5212: 5209: 5206: 5203: 5200: 5197: 5195: 5193: 5190: 5189: 5187: 5184: 5181: 5178: 5175: 5172: 5169: 5166: 5163: 5159: 5158: 5156: 5153: 5150: 5147: 5144: 5141: 5138: 5135: 5132: 5128: 5127: 5125: 5122: 5119: 5116: 5113: 5110: 5107: 5104: 5101: 5097: 5096: 5094: 5091: 5088: 5085: 5082: 5079: 5076: 5073: 5070: 5066: 5065: 5063: 5061: 5058: 5055: 5052: 5049: 5046: 5043: 5041: 5038: 5037: 5035: 5032: 5029: 5026: 5023: 5020: 5017: 5014: 5011: 5007: 5006: 5004: 5001: 4998: 4995: 4992: 4989: 4986: 4983: 4980: 4976: 4975: 4973: 4970: 4967: 4964: 4961: 4958: 4955: 4952: 4949: 4945: 4944: 4942: 4939: 4936: 4933: 4930: 4927: 4924: 4921: 4918: 4914: 4913: 4910: 4907: 4904: 4901: 4896: 4893: 4890: 4885: 4882: 4861: 4858: 4827: 4826: 4823: 4820: 4817: 4814: 4811: 4809: 4806: 4803: 4800: 4794: 4793: 4788: 4783: 4778: 4773: 4770: 4768: 4763: 4760: 4757:43–32 nm 4755: 4740: 4739: 4734: 4729: 4724: 4719: 4716: 4711: 4706: 4703: 4700: 4690: 4689: 4688:12–10 nm 4686: 4683: 4680: 4675: 4670: 4663:19–16 nm 4661: 4648: 4645: 4639: 4631: 4630: 4628: 4626: 4621: 4618: 4615: 4613: 4611: 4609: 4607: 4603: 4602: 4600: 4598: 4596: 4594: 4589: 4586: 4583: 4578: 4573: 4569: 4568: 4565: 4562: 4559: 4556: 4553: 4550: 4547: 4544: 4541: 4502: 4499: 4467:system-on-chip 4453: 4452: 4445: 4442: 4439: 4435: 4434: 4427: 4420: 4413: 4409: 4408: 4401: 4394: 4387: 4383: 4382: 4379: 4376: 4369: 4365: 4364: 4361: 4358: 4351: 4347: 4346: 4343: 4340: 4333: 4329: 4328: 4325: 4322: 4319: 4315: 4314: 4311: 4308: 4301: 4297: 4296: 4289: 4285: 4284: 4277: 4273: 4272: 4271:8,700,000,000 4269: 4265: 4264: 4261: 4257: 4256: 4253: 4249: 4248: 4245: 4241: 4240: 4233: 4229: 4228: 4225: 4222: 4218: 4217: 4214: 4211: 4208: 4204: 4203: 4200: 4197: 4194: 4190: 4189: 4186: 4183: 4180: 4176: 4175: 4172: 4169: 4166: 4162: 4161: 4158: 4155: 4152: 4148: 4147: 4144: 4141: 4138: 4134: 4133: 4130: 4127: 4124: 4120: 4119: 4116: 4113: 4110: 4106: 4105: 4096: 4089: 4083: 4059: 4056: 4052: 4051: 4048: 4042: 4036: 4030: 4024: 4003: 4000: 3988: 3985: 3975: 3972: 3935: 3934:Data retention 3932: 3924:logical errors 3919: 3916: 3907: 3904: 3783:Main article: 3780: 3777: 3731: 3728: 3697: 3696: 3689: 3686: 3679: 3630: 3627: 3625: 3622: 3616: 3615:Transfer rates 3613: 3553:" is at least 3518: 3515: 3509:have built-in 3479:Main article: 3476: 3473: 3451: 3450: 3447: 3444: 3441:MLC (floating- 3438: 3437: 3429: 3426: 3423:SLC (floating- 3420: 3419: 3412: 3409: 3405: 3404: 3401: 3398: 3394: 3393: 3389: 3386: 3382: 3381: 3378: 3375: 3369: 3368: 3365: 3362: 3358: 3357: 3354: 3351: 3347: 3346: 3343: 3340: 3336: 3335: 3332: 3323: 3316: 3315: 3312: 3311:50,000–100,000 3309: 3302: 3301: 3298: 3289: 3276: 3273: 3270: 3269: 3266: 3263: 3259: 3258: 3255: 3252: 3245: 3244: 3241: 3238: 3234: 3233: 3230: 3227: 3223: 3222: 3219: 3216: 3212: 3211: 3208: 3205: 3201: 3200: 3197: 3194: 3190: 3189: 3186: 3183: 3179: 3178: 3175: 3172: 3168: 3167: 3164: 3161: 3151:feature phones 3117: 3116: 3109: 3101: 3098: 3040: 3039: 3032: 3029: 3017:-48, WSOP-48, 2998: 2995: 2969:virtual memory 2920: 2919: 2916: 2913: 2910: 2884: 2881: 2835: 2832: 2803: 2800: 2780: 2777: 2763: 2760: 2715: 2712: 2695: 2694:Data retention 2692: 2655: 2652: 2650: 2647: 2630: 2627: 2621: 2618: 2605: 2602: 2575:V-NAND uses a 2572: 2569: 2540: 2537: 2501:tunnel release 2492: 2489: 2473: 2469: 2453: 2450:NAND gate 2441: 2438: 2417: 2414: 2413: 2412: 2405: 2402: 2377: 2374: 2369:NOR gate: 2356: 2353: 2327: 2324: 2312:Main article: 2309: 2306: 2302:electric field 2289: 2285: 2281: 2280:is less than V 2277: 2273: 2269: 2265: 2261: 2257: 2249: 2241: 2237: 2230:electric field 2214:Main article: 2211: 2208: 2168: 2165: 2139:mobile devices 2092: 2089: 2031:Main article: 2028: 2025: 1941: 1938: 1926:Secure Digital 1922:MultiMediaCard 1807: 1804: 1755: 1752: 1750: 1747: 1644:feature phones 1563:storage medium 1545: 1544: 1542: 1541: 1534: 1527: 1519: 1516: 1515: 1512: 1511: 1505: 1499: 1496:Twistor memory 1493: 1487: 1481: 1475: 1469: 1463: 1457: 1452: 1446: 1440: 1433: 1430: 1429: 1426: 1425: 1422: 1421: 1416: 1414:Quantum memory 1411: 1406: 1401: 1396: 1391: 1390: 1389: 1379: 1374: 1369: 1364: 1359: 1354: 1348: 1346:In development 1345: 1344: 1341: 1340: 1337: 1336: 1331: 1330: 1329: 1324: 1319: 1314: 1309: 1304: 1299: 1294: 1289: 1284: 1279: 1274: 1269: 1264: 1259: 1257:Super Video CD 1254: 1249: 1244: 1239: 1234: 1229: 1223: 1218: 1207: 1202: 1201: 1198: 1197: 1194: 1193: 1188: 1187: 1186: 1181: 1176: 1171: 1166: 1161: 1156: 1151: 1146: 1141: 1136: 1131: 1126: 1121: 1116: 1110: 1105: 1100: 1095: 1090: 1080: 1075: 1070: 1065: 1059: 1054: 1053: 1050: 1049: 1046: 1045: 1040: 1035: 1029: 1023: 1022: 1019: 1018: 1015: 1014: 1009: 1004: 998: 993: 983: 978: 972: 967: 966: 963: 962: 959: 958: 953: 952: 951: 946: 941: 936: 931: 926: 921: 916: 914:MultiMediaCard 911: 906: 901: 891: 890: 889: 884: 879: 874: 868: 862: 850: 845: 844: 843: 838: 828: 823: 817: 812: 811: 808: 807: 801: 800: 797: 796: 790: 784: 779: 776:Selectron tube 773: 767: 761: 754: 751: 750: 747: 746: 743: 742: 741: 740: 730: 725: 720: 714: 709: 704: 703: 702: 692: 691: 690: 685: 680: 675: 670: 665: 660: 655: 650: 645: 640: 630: 629: 628: 623: 616:Hardware cache 612: 607: 606: 603: 602: 596: 595: 592: 591: 586: 581: 576: 571: 569:Edge computing 566: 561: 556: 551: 549:Grid computing 546: 544:Bank switching 541: 536: 531: 526: 521: 516: 511: 506: 501: 496: 491: 489:Virtual memory 486: 481: 476: 471: 466: 461: 456: 454:Disk mirroring 451: 446: 441: 436: 431: 426: 421: 416: 411: 409:Temporary file 406: 401: 396: 391: 386: 381: 376: 371: 366: 361: 359:Knowledge base 356: 351: 349:Storage record 346: 344:Memory refresh 341: 336: 331: 329:Data structure 326: 321: 316: 311: 306: 301: 296: 291: 286: 281: 276: 271: 266: 261: 256: 251: 246: 241: 236: 231: 226: 224:Data integrity 221: 216: 214:Data cleansing 211: 206: 201: 196: 191: 186: 181: 176: 171: 170: 169: 164: 154: 149: 147:Object storage 144: 139: 134: 129: 128: 127: 117: 112: 107: 102: 97: 92: 87: 81: 78: 77: 74: 73: 26: 9: 6: 4: 3: 2: 14982: 14971: 14968: 14966: 14963: 14961: 14958: 14956: 14953: 14951: 14948: 14947: 14945: 14930: 14929: 14920: 14919: 14916: 14910: 14907: 14905: 14902: 14900: 14897: 14895: 14892: 14890: 14887: 14885: 14884:SFF Committee 14882: 14880: 14877: 14875: 14872: 14870: 14867: 14865: 14862: 14860: 14857: 14855: 14852: 14851: 14849: 14845: 14839: 14836: 14834: 14831: 14829: 14826: 14822: 14819: 14818: 14817: 14814: 14812: 14809: 14806: 14804: 14801: 14799: 14796: 14794: 14791: 14790: 14788: 14784: 14777: 14774: 14771: 14768: 14765: 14762: 14760: 14757: 14754: 14751: 14748: 14745: 14742: 14741:Fibre Channel 14739: 14736: 14733: 14732: 14730: 14726: 14720: 14717: 14716: 14714: 14710: 14700: 14697: 14695: 14692: 14690: 14687: 14685: 14682: 14680: 14677: 14675: 14672: 14670: 14667: 14666: 14664: 14660: 14654: 14651: 14646: 14642: 14641: 14640: 14637: 14633: 14630: 14629: 14628: 14625: 14623: 14620: 14618: 14615: 14610: 14607: 14604: 14601: 14600: 14599: 14596: 14592: 14589: 14587: 14584: 14582: 14579: 14577: 14574: 14573: 14572: 14569: 14568: 14566: 14562: 14559: 14557: 14553: 14547: 14544: 14541: 14537: 14533: 14528: 14524: 14523: 14522: 14519: 14517: 14514: 14512: 14509: 14508: 14506: 14502: 14496: 14493: 14491: 14490:Wear leveling 14488: 14486: 14483: 14481: 14478: 14476: 14473: 14471: 14468: 14466: 14463: 14461: 14458: 14456: 14453: 14451: 14448: 14446: 14443: 14441: 14438: 14436: 14433: 14431: 14428: 14426: 14423: 14421: 14418: 14416: 14413: 14411: 14408: 14407: 14405: 14401: 14397: 14390: 14385: 14383: 14378: 14376: 14371: 14370: 14367: 14361: 14357: 14354: 14352: 14349: 14347: 14344: 14342: 14339: 14337: 14333: 14330: 14327: 14325: 14321: 14318: 14315: 14314: 14299: 14295: 14288: 14282: 14266: 14262: 14258: 14252: 14244: 14240: 14239: 14234: 14227: 14211: 14207: 14206: 14201: 14194: 14178: 14174: 14173: 14168: 14161: 14145: 14141: 14140: 14135: 14128: 14112: 14108: 14107: 14102: 14095: 14079: 14075: 14071: 14065: 14046: 14042: 14035: 14029: 14013: 14009: 14008: 14003: 13997: 13995: 13978: 13974: 13970: 13964: 13948: 13944: 13940: 13939: 13934: 13928: 13926: 13909: 13905: 13901: 13895: 13887: 13872: 13865: 13859: 13843: 13839: 13835: 13829: 13821: 13806: 13799: 13793: 13774: 13770: 13763: 13757: 13738: 13734: 13730: 13723: 13717: 13709: 13705: 13701: 13695: 13691: 13687: 13683: 13679: 13672: 13656: 13652: 13651: 13646: 13639: 13631: 13630:Toshiba.co.jp 13627: 13621: 13605: 13601: 13600: 13595: 13588: 13586: 13566: 13562: 13555: 13549: 13547: 13545: 13543: 13526: 13522: 13516: 13514: 13512: 13510: 13508: 13506: 13489: 13485: 13479: 13477: 13475: 13473: 13471: 13454: 13450: 13449: 13444: 13438: 13422: 13418: 13417: 13412: 13405: 13386: 13382: 13375: 13374: 13366: 13364: 13355: 13354:Business Wire 13343: 13339: 13333: 13317: 13313: 13312: 13307: 13300: 13281: 13277: 13273: 13272: 13264: 13257: 13255: 13246: 13244:9783319699073 13240: 13236: 13235: 13227: 13211: 13207: 13203: 13202: 13201:Seeking Alpha 13196: 13188: 13172: 13168: 13164: 13163: 13158: 13152: 13136: 13132: 13128: 13121: 13113: 13112:Business Wire 13101: 13097: 13093: 13087: 13071: 13067: 13066: 13061: 13055: 13039: 13035: 13031: 13027: 13021: 13005: 13001: 12997: 12991: 12975: 12971: 12970: 12965: 12958: 12956: 12936: 12932: 12928: 12927: 12919: 12912: 12905: 12902:: 504. 2000. 12901: 12897: 12893: 12889: 12883: 12875: 12873:9781461550150 12869: 12865: 12861: 12860: 12852: 12850: 12848: 12846: 12837: 12822: 12815: 12809: 12807: 12805: 12803: 12801: 12799: 12797: 12795: 12793: 12791: 12775:. 26 May 2020 12774: 12768: 12752: 12748: 12747: 12742: 12735: 12719: 12715: 12709: 12694: 12693: 12688: 12682: 12674: 12670: 12666: 12659: 12643: 12639: 12635: 12628: 12609: 12605: 12598: 12591: 12580: 12574: 12555: 12548: 12542: 12534: 12530: 12529:bunnie's blog 12526: 12520: 12513: 12498: 12491: 12485: 12469: 12465: 12461: 12455: 12453: 12444: 12440: 12439: 12434: 12427: 12411: 12407: 12401: 12393: 12389: 12385: 12379: 12363: 12359: 12353: 12337: 12333: 12332:Press Release 12329: 12323: 12315: 12311: 12304: 12288: 12284: 12278: 12262: 12258: 12254: 12253:"SSD vs. HDD" 12247: 12240: 12235: 12229: 12222: 12216: 12214: 12197: 12193: 12192:dailytech.com 12189: 12182: 12171: 12167: 12160: 12153: 12151: 12134: 12130: 12126: 12120: 12104: 12100: 12096: 12090: 12074: 12070: 12066: 12059: 12042: 12038: 12033: 12028: 12020: 12016: 12012: 12006: 11998: 11994: 11990: 11984: 11968: 11964: 11957: 11941: 11937: 11930: 11914: 11910: 11904: 11888: 11884: 11878: 11859: 11852: 11846: 11838: 11834: 11833: 11828: 11821: 11813: 11809: 11805: 11799: 11791: 11787: 11783: 11776: 11768: 11764: 11763: 11758: 11751: 11743: 11739: 11733: 11725: 11721: 11720: 11715: 11708: 11700: 11696: 11692: 11686: 11678: 11674: 11670: 11663: 11655: 11651: 11644: 11628: 11624: 11620: 11614: 11598: 11594: 11590: 11584: 11568: 11564: 11560: 11559:"PBlaze5 900" 11554: 11538: 11534: 11530: 11529:"PBlaze5 700" 11524: 11508: 11504: 11503: 11498: 11491: 11475: 11472:. p. 2. 11471: 11470: 11465: 11458: 11442: 11439:. p. 4. 11438: 11437: 11432: 11425: 11409: 11406:. p. 3. 11405: 11404: 11399: 11392: 11376: 11372: 11371: 11366: 11359: 11351: 11350:AnandTech.com 11347: 11340: 11332: 11326: 11318: 11314: 11308: 11300: 11296: 11289: 11281: 11277: 11270: 11255: 11251: 11245: 11237: 11233: 11226: 11224: 11207: 11203: 11199: 11193: 11177: 11173: 11169: 11163: 11147: 11143: 11139: 11133: 11125: 11121: 11117: 11111: 11095: 11091: 11087: 11081: 11065: 11061: 11055: 11047: 11041: 11037: 11036: 11028: 11020: 11014: 11010: 11009: 11001: 10986: 10982: 10978: 10974: 10967: 10959: 10953: 10949: 10948: 10940: 10929: 10922: 10921: 10914: 10906: 10904:9783030798277 10900: 10896: 10895: 10887: 10879: 10877:9789048194315 10873: 10869: 10868: 10860: 10858: 10856: 10847: 10841: 10837: 10836: 10835:Bits on Chips 10828: 10813: 10809: 10802: 10794: 10792:9788120350670 10788: 10784: 10783: 10775: 10767: 10765:9781351798327 10761: 10758:. CRC Press. 10757: 10756: 10748: 10740: 10738:9781438109398 10734: 10730: 10729: 10721: 10713: 10707: 10703: 10702: 10694: 10686: 10684:9789048194315 10680: 10676: 10675: 10667: 10651: 10647: 10643: 10637: 10629: 10625: 10621: 10615: 10599: 10595: 10588: 10569: 10562: 10556: 10537: 10530: 10524: 10505: 10498: 10491: 10480: 10476: 10469: 10463: 10455: 10451: 10445: 10437: 10433: 10429: 10422: 10406: 10402: 10398: 10392: 10390: 10382: 10378: 10375: 10369: 10367: 10358: 10352: 10348: 10347: 10339: 10323: 10319: 10313: 10297: 10293: 10287: 10281: 10277: 10274: 10268: 10261: 10257: 10254: 10248: 10237: 10233: 10226: 10225: 10217: 10198: 10191: 10184: 10182: 10162: 10158: 10151: 10145: 10137: 10133: 10132: 10127: 10120: 10112: 10108: 10107: 10102: 10095: 10087: 10083: 10079: 10072: 10064: 10060: 10056: 10049: 10041: 10037: 10033: 10027: 10008: 10001: 10000: 9992: 9977: 9973: 9969: 9963: 9959: 9955: 9951: 9947: 9940: 9933: 9928: 9913: 9909: 9895: 9891: 9885: 9877: 9873: 9867: 9859: 9855: 9851: 9844: 9833: 9826: 9818: 9814: 9810: 9804: 9800: 9796: 9792: 9788: 9781: 9773: 9766: 9758: 9754: 9753: 9748: 9741: 9722: 9718: 9711: 9705: 9697: 9693: 9689: 9683: 9667: 9663: 9657: 9655: 9653: 9651: 9649: 9647: 9645: 9628: 9624: 9620: 9614: 9606: 9600: 9596: 9595: 9588: 9580: 9576: 9572: 9568: 9564: 9560: 9556: 9549: 9541: 9535: 9531: 9530: 9523: 9515: 9509: 9505: 9504: 9497: 9481: 9478:. UBM Media. 9477: 9473: 9466: 9459: 9454: 9450: 9446: 9443: 9437: 9429: 9425: 9421: 9417: 9413: 9409: 9405: 9401: 9398:: 1478–1487. 9397: 9393: 9389: 9381: 9373: 9369: 9365: 9359: 9355: 9351: 9347: 9340: 9332: 9326: 9318: 9314: 9310: 9306: 9302: 9298: 9295:. E93-C (3). 9294: 9289: 9281: 9273: 9269: 9267:9781927500217 9263: 9259: 9258: 9250: 9242: 9236: 9232: 9228: 9224: 9216: 9212: 9210:9789048194315 9206: 9202: 9201: 9193: 9185: 9181: 9179:9789400751460 9175: 9171: 9167: 9163: 9162: 9154: 9146: 9142: 9138: 9134: 9132:9781605586847 9128: 9124: 9120: 9116: 9112: 9108: 9104: 9099: 9091: 9075: 9071: 9067: 9061: 9053: 9049: 9048: 9043: 9036: 9034: 9025: 9021: 9017: 9011: 9003: 8999: 8998: 8993: 8986: 8984: 8975: 8971: 8967: 8961: 8953: 8949: 8945: 8938: 8931: 8930: 8926: 8917: 8910: 8909: 8901: 8885: 8881: 8880: 8875: 8868: 8866: 8864: 8847: 8843: 8842: 8837: 8830: 8828: 8826: 8809: 8805: 8804: 8799: 8792: 8776: 8772: 8768: 8762: 8747: 8743: 8736: 8728: 8724: 8717: 8709: 8705: 8698: 8690: 8686: 8679: 8677: 8668: 8664: 8657: 8641: 8637: 8633: 8627: 8625: 8608: 8604: 8600: 8594: 8592: 8575: 8571: 8570: 8565: 8559: 8557: 8540: 8536: 8532: 8526: 8524: 8515: 8511: 8510: 8505: 8498: 8496: 8487: 8483: 8479: 8473: 8471: 8454: 8450: 8449: 8444: 8437: 8435: 8418: 8414: 8413: 8408: 8401: 8399: 8390: 8386: 8382: 8378: 8374: 8370: 8366: 8362: 8358: 8354: 8353: 8348: 8341: 8325: 8321: 8318:Eitan, Boaz. 8314: 8306: 8302: 8298: 8294: 8290: 8288:0-7803-0243-5 8284: 8280: 8276: 8272: 8268: 8264: 8257: 8249: 8243: 8239: 8235: 8231: 8228:. Dordrecht: 8227: 8220: 8212: 8208: 8207:SearchStorage 8204: 8197: 8189: 8185: 8180: 8175: 8171: 8167: 8162: 8157: 8153: 8149: 8145: 8138: 8130: 8126: 8122: 8115: 8113: 8104: 8100: 8096: 8092: 8088: 8084: 8080: 8076: 8069: 8061: 8057: 8053: 8049: 8045: 8044: 8036: 8028: 8022: 8018: 8014: 8010: 8006: 7999: 7991: 7987: 7983: 7976: 7961: 7957: 7956: 7951: 7945: 7943: 7941: 7939: 7922: 7918: 7914: 7908: 7906: 7904: 7887: 7883: 7879: 7873: 7871: 7869: 7867: 7850: 7846: 7842: 7836: 7834: 7832: 7830: 7828: 7826: 7824: 7822: 7820: 7818: 7816: 7814: 7812: 7803: 7799: 7795: 7788: 7780: 7776: 7770: 7762: 7758: 7754: 7750: 7746: 7740: 7736: 7732: 7727: 7726: 7717: 7715: 7713: 7705: 7690: 7686: 7679: 7673: 7666: 7654: 7650: 7646: 7640: 7624: 7620: 7613: 7605: 7601: 7597: 7593: 7589: 7582: 7574: 7570: 7566: 7562: 7558: 7554: 7547: 7531: 7527: 7526: 7521: 7515: 7513: 7496: 7492: 7488: 7482: 7475: 7469: 7456: 7450: 7442: 7435: 7427: 7420: 7407: 7401: 7385: 7381: 7380: 7379:HowStuffWorks 7375: 7368: 7352: 7348: 7344: 7343:"Unsung hero" 7337: 7335: 7318: 7314: 7310: 7306: 7300: 7298: 7296: 7294: 7285: 7283:9783540342588 7279: 7275: 7271: 7264: 7256: 7252: 7248: 7244: 7240: 7236: 7232: 7225: 7217: 7211: 7207: 7200: 7192: 7186: 7182: 7178: 7174: 7170: 7163: 7155: 7151: 7147: 7143: 7139: 7132: 7119: 7113: 7105: 7103:9780081025857 7099: 7095: 7091: 7084: 7068: 7064: 7060: 7059: 7058:The Economist 7053: 7046: 7044: 7035: 7031: 7027: 7024:Tyson, Mark. 7020: 7012: 7008: 7004: 7000: 6996: 6990: 6986: 6982: 6978: 6974: 6970: 6962: 6954: 6950: 6949: 6944: 6937: 6935: 6933: 6931: 6922: 6918: 6917: 6912: 6905: 6894: 6890: 6883: 6877: 6858: 6854: 6847: 6841: 6833: 6829: 6825: 6818: 6799: 6795: 6788: 6782: 6774: 6770: 6766: 6760: 6744: 6743: 6738: 6732: 6730: 6728: 6723: 6705: 6698: 6697: 6689: 6676: 6673: 6666: 6659: 6655: 6654: 6650: 6633: 6626: 6625: 6623: 6617: 6610: 6606: 6602: 6598: 6594: 6589: 6587: 6585: 6583: 6581: 6579: 6577: 6575: 6573: 6571: 6569: 6567: 6565: 6560: 6551: 6548: 6546: 6543: 6541: 6538: 6535: 6532: 6530: 6527: 6525: 6522: 6520: 6516: 6512: 6508: 6505: 6503: 6500: 6498: 6495: 6493: 6490: 6488: 6485: 6483: 6480: 6479: 6469: 6466: 6463: 6460: 6457: 6454: 6451: 6448: 6445: 6442: 6441: 6438: 6435: 6432: 6429: 6426: 6423: 6420: 6417: 6414: 6412: 6411: 6408: 6405: 6402: 6399: 6397: 6394: 6391: 6388: 6386: 6384: 6383: 6380: 6377: 6374: 6371: 6369: 6366: 6363: 6360: 6357: 6354: 6353: 6350: 6347: 6344: 6341: 6339: 6336: 6333: 6330: 6328: 6326: 6325: 6322: 6319: 6316: 6313: 6311: 6308: 6305: 6302: 6299: 6296: 6295: 6292: 6289: 6286: 6283: 6281: 6278: 6275: 6272: 6269: 6267: 6266: 6263: 6260: 6257: 6254: 6252: 6249: 6246: 6243: 6241: 6239: 6238: 6235: 6232: 6229: 6226: 6223: 6220: 6217: 6214: 6211: 6208: 6207: 6204: 6201: 6198: 6195: 6193: 6190: 6187: 6184: 6181: 6178: 6177: 6174: 6171: 6168: 6165: 6163: 6160: 6157: 6154: 6152: 6150: 6149: 6146: 6143: 6140: 6137: 6135: 6132: 6129: 6126: 6123: 6120: 6119: 6116: 6113: 6110: 6107: 6105: 6102: 6099: 6096: 6093: 6090: 6089: 6086: 6083: 6080: 6077: 6075: 6072: 6069: 6066: 6063: 6061: 6060: 6057: 6054: 6051: 6048: 6046: 6043: 6041: 6039: 6037: 6035: 6034: 6031: 6028: 6025: 6022: 6020: 6017: 6014: 6011: 6008: 6005: 6004: 6001: 5998: 5995: 5992: 5990: 5987: 5984: 5981: 5979: 5977: 5976: 5973: 5970: 5967: 5964: 5962: 5959: 5956: 5953: 5950: 5947: 5946: 5943: 5940: 5937: 5934: 5932: 5929: 5926: 5923: 5920: 5917: 5916: 5913: 5910: 5907: 5904: 5902: 5899: 5896: 5893: 5890: 5887: 5886: 5883: 5880: 5877: 5874: 5872: 5869: 5866: 5863: 5860: 5857: 5856: 5853: 5851: 5848: 5845: 5842: 5839: 5836: 5833: 5830: 5827: 5826: 5823: 5820: 5817: 5814: 5811: 5808: 5805: 5802: 5799: 5796: 5795: 5792: 5789: 5786: 5783: 5780: 5777: 5774: 5771: 5768: 5765: 5764: 5761: 5759: 5757: 5754: 5751: 5748: 5745: 5742: 5740: 5738: 5737: 5734: 5731: 5728: 5725: 5722: 5719: 5716: 5713: 5710: 5707: 5706: 5703: 5700: 5697: 5694: 5691: 5688: 5685: 5682: 5680: 5678: 5677: 5674: 5671: 5668: 5665: 5662: 5659: 5656: 5653: 5650: 5647: 5646: 5643: 5640: 5637: 5634: 5631: 5629: 5627: 5625: 5623: 5621: 5620: 5617: 5615: 5613: 5610: 5607: 5604: 5601: 5598: 5596: 5594: 5593: 5590: 5587: 5584: 5581: 5578: 5575: 5572: 5569: 5566: 5563: 5562: 5559: 5556: 5553: 5550: 5547: 5544: 5541: 5538: 5536: 5534: 5533: 5530: 5528: 5525: 5522: 5519: 5516: 5513: 5510: 5508: 5506: 5505: 5502: 5499: 5496: 5493: 5490: 5487: 5484: 5481: 5478: 5475: 5474: 5471: 5469: 5466: 5463: 5460: 5457: 5455: 5453: 5451: 5449: 5448: 5445: 5442: 5439: 5436: 5433: 5430: 5427: 5424: 5421: 5418: 5417: 5414: 5412: 5409: 5406: 5403: 5400: 5397: 5395: 5393: 5391: 5390: 5387: 5384: 5381: 5378: 5375: 5372: 5369: 5366: 5363: 5360: 5359: 5356: 5354: 5351: 5348: 5345: 5342: 5339: 5336: 5334: 5332: 5331: 5328: 5326: 5324: 5321: 5318: 5315: 5313: 5311: 5309: 5307: 5306: 5303: 5300: 5297: 5294: 5291: 5288: 5285: 5282: 5279: 5276: 5275: 5272: 5270: 5268: 5265: 5262: 5259: 5256: 5253: 5251: 5249: 5248: 5245: 5242: 5239: 5236: 5233: 5230: 5227: 5224: 5222: 5220: 5219: 5216: 5213: 5210: 5207: 5204: 5201: 5198: 5196: 5194: 5192: 5191: 5188: 5185: 5182: 5179: 5176: 5173: 5170: 5167: 5164: 5161: 5160: 5157: 5154: 5151: 5148: 5145: 5142: 5139: 5136: 5133: 5130: 5129: 5126: 5123: 5120: 5117: 5114: 5111: 5108: 5105: 5102: 5099: 5098: 5095: 5092: 5089: 5086: 5083: 5080: 5077: 5074: 5071: 5068: 5067: 5064: 5062: 5060:1,000 nm 5059: 5056: 5053: 5050: 5047: 5044: 5042: 5040: 5039: 5036: 5033: 5030: 5027: 5024: 5021: 5018: 5015: 5012: 5009: 5008: 5005: 5002: 4999: 4996: 4993: 4990: 4987: 4984: 4981: 4978: 4977: 4974: 4971: 4969:2,000 nm 4968: 4965: 4962: 4959: 4956: 4953: 4950: 4947: 4946: 4943: 4940: 4937: 4934: 4931: 4928: 4925: 4922: 4919: 4916: 4915: 4911: 4908: 4905: 4902: 4897: 4894: 4891: 4886: 4883: 4880: 4879: 4875: 4871: 4867: 4857: 4855: 4851: 4847: 4843: 4839: 4834: 4824: 4821: 4818: 4815: 4812: 4810: 4807: 4804: 4802:46–35 nm 4801: 4799: 4796: 4795: 4792:3D NAND 4789: 4784: 4779: 4774: 4771: 4769: 4764: 4761: 4756: 4753: 4749: 4745: 4742: 4741: 4735: 4730: 4725: 4720: 4717: 4712: 4707: 4704: 4702:34–25 nm 4701: 4699: 4695: 4692: 4691: 4687: 4685:12–10 nm 4684: 4682:16–10 nm 4681: 4677:16–10 nm 4676: 4672:19–10 nm 4671: 4668: 4662: 4659: 4655: 4649: 4646: 4644: 4640: 4636: 4633: 4632: 4629: 4627: 4625: 4622: 4619: 4616: 4614: 4612: 4610: 4608: 4605: 4604: 4601: 4599: 4597: 4595: 4593: 4590: 4587: 4584: 4582: 4579: 4577: 4574: 4571: 4570: 4566: 4563: 4560: 4557: 4554: 4551: 4548: 4545: 4542: 4539: 4536: 4535: 4532: 4530: 4526: 4522: 4518: 4512: 4508: 4498: 4480: 4472: 4468: 4464: 4460: 4446: 4443: 4440: 4437: 4436: 4433: 4432: 4428: 4426: 4425: 4421: 4419: 4418: 4414: 4411: 4410: 4407: 4406: 4402: 4400: 4399: 4395: 4393: 4392: 4388: 4385: 4384: 4380: 4377: 4375: 4374: 4370: 4367: 4366: 4362: 4359: 4357: 4356: 4352: 4349: 4348: 4344: 4341: 4339: 4338: 4334: 4331: 4330: 4326: 4323: 4320: 4317: 4316: 4312: 4309: 4307: 4306: 4302: 4299: 4298: 4295: 4294: 4290: 4287: 4286: 4282: 4278: 4275: 4274: 4270: 4267: 4266: 4262: 4259: 4258: 4254: 4251: 4250: 4246: 4243: 4242: 4239: 4238: 4234: 4231: 4230: 4220: 4219: 4215: 4212: 4206: 4205: 4201: 4198: 4195: 4192: 4191: 4187: 4184: 4182:477,200,000+ 4181: 4178: 4177: 4173: 4170: 4167: 4164: 4163: 4159: 4156: 4153: 4150: 4149: 4145: 4142: 4139: 4136: 4135: 4131: 4128: 4125: 4122: 4121: 4117: 4114: 4111: 4108: 4107: 4103: 4100: 4094: 4088: 4081: 4080: 4069: 4065: 4055: 4049: 4046: 4043: 4040: 4037: 4034: 4031: 4028: 4025: 4022: 4019: 4018: 4017: 4013: 4009: 4002:Manufacturers 3999: 3994: 3984: 3981: 3971: 3969: 3964: 3959: 3957: 3953: 3949: 3944: 3942: 3931: 3929: 3925: 3915: 3913: 3903: 3901: 3897: 3893: 3888: 3886: 3882: 3878: 3874: 3869: 3867: 3863: 3859: 3854: 3850: 3848: 3844: 3841:In May 2006, 3839: 3837: 3832: 3830: 3826: 3825: 3820: 3819:program/erase 3814: 3812: 3808: 3804: 3800: 3791: 3786: 3776: 3774: 3770: 3766: 3762: 3758: 3753: 3749: 3745: 3741: 3737: 3727: 3725: 3721: 3716: 3713: 3710: 3706: 3703: 3694: 3690: 3687: 3684: 3680: 3677: 3672: 3668: 3664: 3660: 3659: 3658: 3655: 3653: 3649: 3645: 3635: 3621: 3612: 3608: 3605: 3601: 3598: 3594: 3592: 3588: 3584: 3579: 3577: 3573: 3569: 3568:wear leveling 3563: 3561: 3552: 3548: 3544: 3540: 3534: 3532: 3528: 3524: 3514: 3512: 3508: 3504: 3500: 3496: 3492: 3487: 3482: 3472: 3468: 3464: 3462: 3458: 3457:wear leveling 3448: 3445: 3440: 3439: 3435: 3430: 3427: 3422: 3421: 3417: 3413: 3410: 3407: 3406: 3402: 3399: 3396: 3395: 3390: 3387: 3384: 3383: 3379: 3376: 3371: 3370: 3366: 3363: 3360: 3359: 3355: 3352: 3349: 3348: 3344: 3341: 3338: 3337: 3333: 3331:high-capacity 3324: 3321: 3318: 3317: 3313: 3310: 3307: 3304: 3303: 3299: 3296: 3290: 3286:Type of flash 3285: 3284: 3281: 3267: 3264: 3261: 3260: 3256: 3253: 3250: 3247: 3246: 3242: 3239: 3236: 3235: 3231: 3228: 3225: 3224: 3220: 3217: 3215:Standby power 3214: 3213: 3209: 3206: 3203: 3202: 3198: 3195: 3192: 3191: 3187: 3184: 3181: 3180: 3176: 3173: 3170: 3169: 3165: 3162: 3159: 3158: 3155: 3152: 3148: 3143: 3141: 3137: 3133: 3128: 3126: 3121: 3114: 3113:random access 3110: 3107: 3106: 3105: 3097: 3095: 3091: 3087: 3083: 3079: 3074: 3072: 3068: 3064: 3059: 3057: 3053: 3049: 3045: 3037: 3033: 3030: 3028: 3024: 3020: 3016: 3012: 3008: 3007: 3006: 3004: 2993: 2988: 2984: 2982: 2978: 2974: 2970: 2965: 2963: 2957: 2955: 2951: 2947: 2946:Hamming codes 2943: 2939: 2937: 2936:wear leveling 2933: 2928: 2926: 2917: 2914: 2911: 2909: 2905: 2904: 2903: 2900: 2898: 2894: 2890: 2889:block devices 2883:NAND memories 2880: 2878: 2873: 2869: 2867: 2862: 2860: 2859:device driver 2855: 2853: 2849: 2840: 2831: 2827: 2825: 2824:address buses 2821: 2820:random access 2817: 2813: 2809: 2799: 2796: 2794: 2790: 2786: 2779:X-ray effects 2776: 2774: 2770: 2759: 2755: 2754:(see below). 2753: 2749: 2745: 2740: 2736: 2735:wear leveling 2732: 2727: 2725: 2721: 2711: 2709: 2700: 2691: 2689: 2685: 2680: 2678: 2673: 2671: 2667: 2662: 2654:Block erasure 2646: 2639: 2635: 2626: 2617: 2614: 2609: 2601: 2597: 2593: 2590: 2586: 2582: 2578: 2568: 2566: 2562: 2558: 2554: 2545: 2539:Vertical NAND 2536: 2534: 2530: 2524: 2520: 2518: 2514: 2510: 2506: 2502: 2498: 2488: 2485: 2483: 2477: 2466: 2457: 2451: 2447: 2433: 2429: 2427: 2423: 2410: 2406: 2403: 2400: 2399: 2398: 2390: 2382: 2373: 2370: 2361: 2352: 2348: 2345: 2341: 2336: 2334: 2323: 2321: 2315: 2305: 2303: 2297: 2295: 2255: 2247: 2235: 2231: 2227: 2223: 2217: 2207: 2205: 2201: 2196: 2194: 2190: 2186: 2182: 2173: 2164: 2162: 2151: 2146: 2142: 2140: 2120: 2116: 2108: 2101: 2097: 2088: 2086: 2082: 2078: 2074: 2070: 2069:floating gate 2066: 2062: 2058: 2054: 2049: 2045: 2041: 2039: 2034: 2024: 2022: 2018: 2010: 2006: 1998: 1994: 1987: 1984:demonstrated 1983: 1979: 1975: 1971: 1967: 1964: 1962: 1957: 1955: 1951: 1947: 1937: 1935: 1931: 1927: 1923: 1919: 1914: 1912: 1908: 1904: 1903:optical media 1900: 1894: 1892: 1888: 1887:set-top boxes 1884: 1880: 1876: 1872: 1868: 1867:random access 1864: 1860: 1855: 1853: 1851: 1847:flash at the 1846: 1842: 1838: 1833: 1829: 1825: 1821: 1817: 1813: 1803: 1801: 1800:mobile phones 1797: 1793: 1787: 1785: 1781: 1777: 1773: 1772:Simon Min Sze 1769: 1765: 1761: 1746: 1744: 1740: 1736: 1732: 1727: 1725: 1721: 1715: 1712: 1708: 1704: 1700: 1696: 1692: 1688: 1687:mobile phones 1684: 1680: 1676: 1672: 1667: 1663: 1661: 1655: 1653: 1649: 1645: 1641: 1637: 1633: 1628: 1626: 1622: 1618: 1613: 1609: 1605: 1601: 1600:Fujio Masuoka 1597: 1596:floating-gate 1592: 1590: 1587: 1586:floating gate 1583: 1580: 1576: 1572: 1568: 1564: 1561: 1558: 1555: 1551: 1540: 1535: 1533: 1528: 1526: 1521: 1520: 1518: 1517: 1509: 1506: 1503: 1502:Bubble memory 1500: 1497: 1494: 1491: 1488: 1485: 1482: 1479: 1476: 1473: 1470: 1467: 1464: 1461: 1458: 1456: 1453: 1450: 1447: 1444: 1441: 1438: 1435: 1434: 1428: 1427: 1420: 1417: 1415: 1412: 1410: 1407: 1405: 1402: 1400: 1397: 1395: 1392: 1388: 1385: 1384: 1383: 1380: 1378: 1375: 1373: 1370: 1368: 1365: 1363: 1360: 1358: 1355: 1353: 1350: 1349: 1343: 1342: 1335: 1332: 1328: 1325: 1323: 1320: 1318: 1315: 1313: 1310: 1308: 1305: 1303: 1300: 1298: 1295: 1293: 1290: 1288: 1285: 1283: 1280: 1278: 1275: 1273: 1270: 1268: 1265: 1263: 1260: 1258: 1255: 1253: 1250: 1248: 1245: 1243: 1240: 1238: 1235: 1233: 1230: 1227: 1224: 1222: 1219: 1217: 1214: 1213: 1212: 1209: 1208: 1205: 1200: 1199: 1192: 1189: 1185: 1182: 1180: 1177: 1175: 1172: 1170: 1167: 1165: 1162: 1160: 1157: 1155: 1152: 1150: 1147: 1145: 1142: 1140: 1137: 1135: 1132: 1130: 1129:Cassette tape 1127: 1125: 1124:Videocassette 1122: 1120: 1117: 1114: 1111: 1109: 1106: 1104: 1101: 1099: 1096: 1094: 1093:Magnetic tape 1091: 1089: 1086: 1085: 1084: 1081: 1079: 1076: 1074: 1071: 1069: 1066: 1064: 1061: 1060: 1057: 1052: 1051: 1044: 1041: 1039: 1036: 1034: 1031: 1030: 1027: 1021: 1020: 1013: 1010: 1008: 1005: 1002: 999: 997: 994: 991: 987: 984: 982: 979: 977: 974: 973: 970: 965: 964: 957: 954: 950: 947: 945: 942: 940: 937: 935: 932: 930: 927: 925: 922: 920: 917: 915: 912: 910: 907: 905: 902: 900: 897: 896: 895: 892: 888: 885: 883: 880: 878: 875: 872: 869: 866: 863: 860: 857: 856: 854: 851: 849: 848:ROM cartridge 846: 842: 839: 837: 834: 833: 832: 829: 827: 824: 822: 819: 818: 815: 810: 809: 806: 803: 802: 794: 791: 788: 785: 783: 780: 777: 774: 771: 768: 765: 762: 759: 756: 755: 749: 748: 739: 736: 735: 734: 731: 729: 726: 724: 721: 718: 715: 713: 710: 708: 705: 701: 698: 697: 696: 693: 689: 686: 684: 681: 679: 676: 674: 671: 669: 666: 664: 661: 659: 656: 654: 651: 649: 646: 644: 641: 639: 636: 635: 634: 631: 627: 624: 622: 619: 618: 617: 614: 613: 610: 605: 604: 601: 598: 597: 590: 587: 585: 582: 580: 577: 575: 574:Dew computing 572: 570: 567: 565: 564:Fog computing 562: 560: 559:Cloud storage 557: 555: 552: 550: 547: 545: 542: 540: 539:Memory paging 537: 535: 532: 530: 527: 525: 522: 520: 517: 515: 512: 510: 507: 505: 502: 500: 497: 495: 492: 490: 487: 485: 482: 480: 477: 475: 472: 470: 467: 465: 462: 460: 457: 455: 452: 450: 447: 445: 442: 440: 437: 435: 432: 430: 427: 425: 422: 420: 417: 415: 412: 410: 407: 405: 402: 400: 397: 395: 392: 390: 387: 385: 382: 380: 377: 375: 374:File deletion 372: 370: 367: 365: 364:Computer file 362: 360: 357: 355: 352: 350: 347: 345: 342: 340: 337: 335: 332: 330: 327: 325: 322: 320: 317: 315: 312: 310: 307: 305: 302: 300: 297: 295: 292: 290: 287: 285: 282: 280: 277: 275: 272: 270: 267: 265: 262: 260: 257: 255: 252: 250: 247: 245: 244:Data recovery 242: 240: 237: 235: 232: 230: 229:Data security 227: 225: 222: 220: 217: 215: 212: 210: 207: 205: 202: 200: 197: 195: 192: 190: 187: 185: 182: 180: 177: 175: 172: 168: 165: 163: 160: 159: 158: 155: 153: 150: 148: 145: 143: 140: 138: 135: 133: 130: 126: 125:floating-gate 123: 122: 121: 118: 116: 113: 111: 108: 106: 103: 101: 98: 96: 93: 91: 88: 86: 83: 82: 76: 75: 71: 67: 64: 63: 57: 53: 48: 44: 40: 33: 19: 14926: 14759:SATA Express 14485:Trim command 14475:Secure erase 14470:Read disturb 14425:Flash memory 14424: 14281: 14269:. Retrieved 14251: 14236: 14226: 14214:. Retrieved 14203: 14193: 14181:. Retrieved 14170: 14160: 14148:. Retrieved 14137: 14127: 14115:. Retrieved 14104: 14094: 14082:. Retrieved 14064: 14052:. Retrieved 14028: 14016:. Retrieved 14012:the original 14005: 13981:. Retrieved 13977:the original 13963: 13951:. Retrieved 13936: 13912:. Retrieved 13894: 13884:– via 13878:. Retrieved 13871:the original 13858: 13846:. Retrieved 13828: 13818:– via 13812:. Retrieved 13805:the original 13792: 13780:. Retrieved 13756: 13744:. Retrieved 13737:the original 13729:Intel museum 13728: 13716: 13677: 13671: 13659:. Retrieved 13648: 13638: 13629: 13620: 13608:. Retrieved 13604:the original 13597: 13572:. Retrieved 13565:the original 13561:TechInsights 13560: 13529:. Retrieved 13525:the original 13492:. Retrieved 13488:the original 13457:. Retrieved 13453:the original 13446: 13437: 13425:. Retrieved 13414: 13404: 13392:. Retrieved 13372: 13352:– via 13346:. Retrieved 13332: 13320:. Retrieved 13311:The Register 13309: 13299: 13287:. Retrieved 13269: 13233: 13226: 13214:. Retrieved 13199: 13187: 13175:. Retrieved 13167:Nikkei, Inc. 13160: 13151: 13139:. Retrieved 13130: 13120: 13110:– via 13104:. Retrieved 13086: 13074:. Retrieved 13063: 13054: 13042:. Retrieved 13038:the original 13029: 13020: 13008:. Retrieved 13000:DRAMeXchange 12999: 12990: 12978:. Retrieved 12967: 12942:. Retrieved 12924: 12911: 12903: 12895: 12891: 12882: 12858: 12834:– via 12828:. Retrieved 12777:. Retrieved 12767: 12755:. Retrieved 12744: 12734: 12722:. Retrieved 12717: 12708: 12696:. Retrieved 12690: 12681: 12669:AppleInsider 12668: 12658: 12646:. Retrieved 12642:the original 12637: 12627: 12615:. Retrieved 12608:the original 12603: 12590: 12573: 12561:. Retrieved 12541: 12528: 12519: 12511: 12504:. Retrieved 12497:the original 12484: 12472:. Retrieved 12463: 12436: 12426: 12414:. Retrieved 12410:the original 12400: 12378: 12366:. Retrieved 12362:the original 12352: 12340:. 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Retrieved 6740: 6688: 6677:(SSD) – 63.2 6649: 6616: 6436:150 mm² 6348:158 mm² 6290:150 mm² 6114:192 mm² 6100:Stacked NAND 6084:374 mm² 6070:Stacked NAND 5971:113 mm² 5941:353 mm² 5927:Stacked NAND 5897:Stacked NAND 5881:252 mm² 5867:Stacked NAND 5407:AMD, Fujitsu 5379:Intel, Sharp 5124:280 mm² 4830: 4787:3D NAND 4710:(MLC + HKMG) 4679:V-NAND (32L) 4674:V-NAND (24L) 4514: 4456: 4430: 4429: 4423: 4422: 4416: 4415: 4404: 4403: 4397: 4396: 4390: 4389: 4372: 4371: 4354: 4353: 4336: 4335: 4304: 4303: 4292: 4291: 4236: 4235: 4196:762,195,122 4168:359,000,000 4154:235,000,000 4140:112,000,000 4102:memory cells 4087:memory chips 4053: 4015: 3996: 3977: 3960: 3958:algorithms. 3945: 3937: 3921: 3909: 3889: 3873:hybrid drive 3870: 3855: 3851: 3840: 3833: 3822: 3818: 3815: 3796: 3733: 3717: 3714: 3704: 3698: 3656: 3640: 3629:Serial flash 3624:Applications 3618: 3609: 3606: 3602: 3599: 3595: 3580: 3564: 3545:, which use 3535: 3520: 3495:memory cards 3488: 3484: 3469: 3465: 3454: 3377:6,000–40,000 3293:(erases per 3278: 3204:Active power 3193:Cost per bit 3174:File storage 3144: 3129: 3122: 3118: 3103: 3075: 3060: 3041: 3000: 2985: 2966: 2958: 2944: 2940: 2929: 2921: 2901: 2886: 2874: 2870: 2863: 2856: 2845: 2834:NOR memories 2828: 2805: 2797: 2789:PCB Assembly 2782: 2769:read disturb 2768: 2765: 2762:Read disturb 2756: 2752:read disturb 2751: 2744:thin clients 2728: 2717: 2705: 2681: 2674: 2664:for example 2657: 2643: 2637: 2623: 2610: 2607: 2604:Construction 2598: 2594: 2574: 2556: 2550: 2525: 2521: 2515:formats and 2494: 2486: 2478: 2467: 2458: 2443: 2421: 2419: 2395: 2366: 2349: 2337: 2333:charge pumps 2329: 2317: 2298: 2253: 2245: 2219: 2197: 2178: 2147: 2143: 2094: 2079:in 2002. 3D 2050: 2046: 2042: 2036: 1968: 1965: 1958: 1943: 1930:Memory Stick 1915: 1907:memory cards 1895: 1891:CompactFlash 1856: 1848: 1809: 1788: 1776:memory cells 1757: 1731:die stacking 1728: 1716: 1691:synthesizers 1668: 1664: 1656: 1632:memory cards 1629: 1621:memory chips 1617:machine word 1593: 1570: 1566: 1557:non-volatile 1550:Flash memory 1549: 1548: 1449:Punched tape 1443:Punched card 1409:Time crystal 1277:Hyper CD-ROM 1216:Optical disc 1108:Tape library 1043:FeFET memory 1024:Early-stage 904:CompactFlash 899:Memory Stick 859:Flash memory 858: 821:Diode matrix 805:Non-volatile 589:Kryder's law 579:Amdahl's law 504:Software rot 479:Logical disk 379:File copying 314:Data storage 269:File sharing 254:Data cluster 43: 14816:Thunderbolt 14808:PCI Express 14753:PCI Express 14747:NVM Express 14662:Independent 14556:Controllers 14455:Memory wear 12474:19 December 12342:30 November 12293:30 November 11973:30 November 11946:30 November 11120:Toshiba.com 10817:23 December 10131:Yahoo! News 9912:semwiki.com 9299:: 317–323. 8814:2 September 8781:2 September 8545:23 November 8412:ExtremeTech 8054:: 498–502. 7698:13 November 7241:: 131–136. 7175:: 583–596. 6706:SSD – 91.64 6634:NAND – 3.64 6622:memory chip 5729:130 nm 5669:170 nm 5638:160 nm 5526:180 nm 5497:250 nm 5440:250 nm 5410:350 nm 5382:400 nm 5298:400 nm 5152:400 nm 5090:600 nm 5028:Seeq, Intel 4825:12 nm 4790:12 nm 4785:12 nm 4765:19 nm 4713:20 nm 4708:20 nm 4650:21 nm 4529:Moore's law 4511:Moore's law 4126:73,000,000 4112:26,000,000 4104:(billions) 3892:smartphones 3858:MacBook Air 3847:South Korea 3757:hard drives 3543:hard drives 3527:Moore's law 3511:controllers 3408:3D PLC NAND 3397:3D QLC NAND 3388:1,500–5,000 3385:3D TLC NAND 3373:3D MLC NAND 3364:>100,000 3361:3D SLC NAND 3262:Reliability 3226:Write speed 3094:PCI Express 3088:, formed a 2925:NVM Express 2714:Memory wear 2649:Limitations 2620:Performance 2513:memory card 2376:Programming 2264:) between V 2200:polysilicon 2019:introduced 1978:memory cell 1865:, allowing 1768:Dawon Kahng 1711:access time 1695:video games 1648:smartphones 1582:logic gates 1508:Floppy disk 1460:Drum memory 894:Memory card 861:is used in: 795:(2002–2010) 760:(1946–1947) 584:Moore's law 429:Boot sector 369:Object file 274:File system 85:Memory cell 14944:Categories 14821:USB Type-C 14764:Serial ATA 14728:Interfaces 14694:PMC-Sierra 14410:Encryption 13661:2 December 13459:16 October 13427:15 October 13394:23 October 13348:17 October 13322:17 October 13289:17 October 13216:17 October 13177:16 October 13141:16 October 13106:16 October 13076:16 October 13044:16 October 13034:IHS Markit 13010:16 October 12980:21 October 12944:22 October 12830:16 October 12464:www.ni.com 12416:7 November 12368:15 October 11695:Micron.com 11691:"QLC NAND" 11116:"SLC NAND" 10372:Spansion. 10328:3 February 10302:3 February 10016:6 December 8154:(1): 526. 7659:23 January 7455:US 4531203 7406:GB1517925A 7148:(9): 547. 7118:US2802760A 6807:4 December 6719:References 6660:(NVM) – 85 6638:billion+ ( 6627:NOR – 3.64 6270:KLUFG8R1EM 6169:10 nm 6141:16 nm 6094:KLMCG8GE4A 6081:32 nm 6052:20 nm 6026:20 nm 5996:43 nm 5968:32 nm 5938:43 nm 5878:56 nm 5849:40 nm 5818:50 nm 5787:60 nm 5103:DD28F032SA 5087:Mitsubishi 4892:Flash type 4864:See also: 4822:12 nm 4819:16 nm 4816:16 nm 4813:16 nm 4805:26 nm 4780:15 nm 4775:15 nm 4772:15 nm 4767:(MLC, TLC) 4762:24 nm 4736:12 nm 4731:12 nm 4726:16 nm 4721:16 nm 4718:16 nm 4705:25 nm 4669:(MLC, TLC) 4647:27 nm 4643:20 nm 4624:14 nm 4620:15 nm 4617:17 nm 4592:16 nm 4588:18 nm 4585:20 nm 4581:22 nm 4576:32 nm 4540:or company 4505:See also: 4438:1992–2020 4232:2005–2007 4221:2000–2004 4062:See also: 3991:See also: 3885:executable 3877:ReadyBoost 3799:hard disks 3773:DSL modems 3765:Option ROM 3744:DDR2 SDRAM 3505:chips and 3145:The first 3140:hard disks 2932:controller 2557:BiCS Flash 2440:NAND flash 1918:SmartMedia 1863:data buses 1754:Background 1652:static RAM 1571:NAND flash 1554:electronic 1431:Historical 1103:Tape drive 929:SmartMedia 752:Historical 449:Disk image 444:Disk array 319:Data store 120:MOS memory 110:Memory map 56:controller 14632:SandForce 14581:Fusion-io 14205:AnandTech 14106:AnandTech 13650:AnandTech 13531:9 January 13494:9 January 13416:AnandTech 12234:bulk read 12223:. p. 232. 12202:3 October 12139:8 October 12109:8 October 12047:28 August 11719:AnandTech 11469:AnandTech 11436:AnandTech 11403:AnandTech 11370:AnandTech 11212:1 January 11182:1 January 11152:1 January 11100:1 January 11070:3 January 10990:15 August 10656:12 August 10646:Microsoft 10545:15 August 10513:28 August 9817:229376195 9752:AnandTech 9672:27 August 9420:1558-173X 9372:2159-4864 9047:AnandTech 8997:AnandTech 8879:AnandTech 8381:1558-0563 8305:111203629 8297:0163-1918 8170:1556-276X 8103:110503864 7950:"History" 7917:SlashGear 7753:2376-6697 7501:18 August 7491:eWeek.com 7011:206998691 7003:2376-8606 6948:AnandTech 6916:AnandTech 6828:Backblaze 6507:microSDXC 4898:Layers or 4895:Cell type 4884:Chip name 4471:ARM chips 4093:gigabytes 4058:Shipments 3866:Ultrabook 3724:bitstream 3705:DataFlash 3683:packaging 3671:wire bond 3555:64 × 1000 3443:gate) NOR 3425:gate) NOR 3400:100–1,500 3160:Attribute 3086:Microsoft 3021:-52, and 2954:BCH codes 2739:bad block 2571:Structure 2567:in 2013. 2355:NOR flash 2344:low-power 2087:in 2013. 2051:In 1991, 2005:NOR flash 1814:based on 1671:computers 1567:NOR flash 1490:Disk pack 1455:Plugboard 1292:DVD-Video 1221:LaserDisc 1119:Videotape 990:3D XPoint 981:Memristor 621:CPU cache 389:Core dump 309:Data bank 259:Directory 14928:Category 14899:T10/SCSI 14679:Maxiotek 14639:SK Hynix 14609:Indilinx 14521:SK Hynix 14332:Archived 14320:Archived 14298:Archived 14296:. 2023. 14265:Archived 14243:Archived 14210:Archived 14177:Archived 14172:EE Times 14144:Archived 14139:Engadget 14111:Archived 14078:Archived 14045:Archived 14007:SK Hynix 13983:11 March 13947:Archived 13908:Archived 13842:Archived 13773:Archived 13708:40985239 13655:Archived 13421:Archived 13385:Archived 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SNIA. 10479:Archived 10454:Archived 10411:11 March 10377:Archived 10322:Archived 10296:Archived 10276:Archived 10256:Archived 10236:Archived 10161:Archived 10136:Archived 10111:Archived 10086:Archived 10082:phys.org 10063:Archived 10040:Archived 10007:Archived 9976:37127243 9858:Archived 9854:TechSpot 9757:Archived 9730:27 March 9696:Archived 9666:Archived 9627:Archived 9480:Archived 9445:Archived 9428:13701601 9317:Archived 9272:archived 9215:archived 9184:archived 9145:archived 9074:Archived 9052:Archived 9024:Archived 9002:Archived 8952:Archived 8884:Archived 8846:Archived 8808:Archived 8640:Archived 8607:Archived 8574:Archived 8539:Archived 8514:Archived 8509:EE Times 8453:Archived 8448:Engadget 8417:Archived 8389:24724751 8211:Archived 8188:25278820 8129:Archived 7990:Archived 7921:Archived 7886:Archived 7849:Archived 7841:"Memory" 7761:42565898 7653:Archived 7573:25967023 7384:Archived 7357:18 March 7351:Archived 7317:Archived 7067:Archived 7034:Archived 6953:Archived 6921:Archived 6893:Archived 6857:Archived 6832:Archived 6798:Archived 6710:exabytes 6703:exabytes 6681:exabytes 6665:exabytes 6476:See also 6446:eUFS 4.0 6427:16 of 64 6415:eUFS 2.1 6400:SK Hynix 6212:eUFS 2.1 6138:SK Hynix 4860:Timeline 4798:SK Hynix 4738:3D NAND 4459:embedded 4082:Year(s) 4039:SK Hynix 3987:Industry 3948:firmware 3752:firmware 3742:, while 3576:metadata 3517:Capacity 3497:, SSDs, 3434:Spansion 3411:Unknown 3353:Unknown 3350:QLC NAND 3339:TLC NAND 3027:packages 2992:Copyback 2981:overlays 2897:checksum 2119:SK Hynix 2065:patented 2061:Spansion 1976:in each 1883:firmware 1739:tebibyte 1419:UltraRAM 1297:DVD card 1252:Video CD 1237:CD Video 1007:Nano-RAM 976:Memistor 949:XQD card 924:SIM card 782:Dekatron 668:XDR DRAM 663:EDO DRAM 600:Volatile 394:Hex dump 304:Database 199:Metadata 194:Big data 14909:T13/ATA 14879:SATA-IO 14684:Marvell 14643:Bought 14627:Seagate 14622:Samsung 14576:SanDisk 14564:Captive 14525:Bought 14516:Samsung 14430:SLC/MLC 14360:OpenWrt 14271:13 July 14261:Samsung 14183:23 June 14150:23 June 14117:23 June 14084:20 June 14074:Toshiba 14054:15 July 13973:Toshiba 13953:25 June 13943:Samsung 13914:20 June 13904:Toshiba 13880:10 July 13848:20 June 13838:Toshiba 13814:27 June 13782:27 June 13746:31 July 13610:21 June 13574:25 June 13131:KitGuru 13096:Winbond 12779:27 June 12757:12 July 12724:27 June 12718:Reuters 12267:11 July 12015:SanDisk 11993:SanDisk 11832:Reuters 11808:Samsung 11513:11 June 11480:11 June 11447:11 June 11414:11 June 11381:11 June 10624:Toshiba 10577:31 July 10401:Toshiba 10383:. 2011. 10262:. p. 1. 10170:29 July 9981:22 June 9717:Samsung 9692:Samsung 9567:Bibcode 9400:Bibcode 9301:Bibcode 9166:Bibcode 9141:6055676 9111:Bibcode 8890:27 June 8852:23 June 8771:SanDisk 8646:21 June 8636:Toshiba 8613:21 June 8603:Toshiba 8535:Toshiba 8482:Samsung 8459:10 July 8361:Bibcode 8179:4182445 8083:Bibcode 7965:19 June 7960:Samsung 7927:20 June 7892:21 June 7882:Toshiba 7855:25 June 7649:Renesas 7629:31 July 7555:. 1984 7536:20 June 7525:Toshiba 7323:19 June 7243:Bibcode 7063:Reuters 6749:20 June 6631:billion 6452:3D NAND 6430:Samsung 6372:Samsung 6342:Toshiba 6331:1.33 Tb 6314:Samsung 6284:Samsung 6255:Toshiba 6227:Samsung 6224:8 of 64 6196:Samsung 6166:Samsung 6108:Samsung 6078:Toshiba 6049:Samsung 5965:Toshiba 5935:Toshiba 5875:Toshiba 5846:Samsung 5815:Samsung 5784:Samsung 5755:Hitachi 5611:Samsung 5599:1 Gibit 5582:Hitachi 5551:Toshiba 5494:Toshiba 5464:Hitachi 5437:Toshiba 5266:SanDisk 5208:Toshiba 5057:Toshiba 4997:Toshiba 4966:Toshiba 4935:Toshiba 4906:Process 4831:As the 4782:3D NAND 4777:3D NAND 4752:SanDisk 4744:Toshiba 4733:3D NAND 4728:3D NAND 4723:3D NAND 4635:Samsung 4216:5,082+ 4202:3,642+ 4188:2,533+ 4047:– 12.3% 4041:– 18.5% 4035:– 12.6% 4029:– 20.6% 4023:– 31.4% 3928:bit rot 3887:files. 3775:, etc. 3707:or the 3693:routing 3583:SanDisk 3446:100,000 3268:Higher 3243:Faster 3232:Slower 3210:Higher 3199:Higher 3067:Samsung 3063:Toshiba 3056:Numonyx 2748:routers 2585:Fujitsu 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