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546:. These early lasers, mostly made out of a single chunk of GaAs, required high current densities to operate, so they could only run continuously at very low temperatures; at room temperature, they could only operate for a fraction of a second. For them to be used in a practical communications system, they would need to operate continuously at room temperature.
597:). Over the next few years, the lasers became longer-lasting and more reliable. At Bell Labs, the job of creating a practical device was given to Barney DeLoach. But in January 1973, they told him to cease all work on the problem. As he recalled, their view was "We've already got air, we've already got copper. Who needs a new medium?"
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After the work on double heterostructure lasers Panish continued to demonstrate variants of the laser structures with other collaborators in work done through the late 1970s, but the major thrust of his work for the rest of his career, until 1992, was to exploit the new opportunities presented by the
557:
laser but
Kroemer failed to suggest that a suitable (lattice matched) combination of III-V semiconductors would be needed to provide ideal interfaces between the III-V compounds with their different bandgaps. The combination of such materials used for the first CW lasers was GaAs (Gallium Arsenide)
502:
into the atmosphere. Panish was unwilling to do this work, but the government allotted 5% of the budget to basic research. From 1957 to 1964 he worked on the chemical thermodynamics of refractory compounds, but then decided to leave because the government terminated the funding for basic research.
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in 1970 one month before
Hayashi and Panish published similar results. Although there was some degree of contact between the group in Leningrad and the group in New Jersey including a visit by Alferov to the New Jersey lab, and a visit by Panish and Hayashi to Alferov’s lab in Leningrad, the two
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use of
Molecular Beam Epitaxy to produce lattice matched semiconductor heterostructures in III-V systems other than GaAs-AlGaAs for other devices (detectors, quantum well physics and devices, ultra fast hererostructure transistors) and for the study of the physics of small layered structures.
576:
while
Hayashi tested the laser properties. Panish and Hayashi observed what they thought might be CW operation in several wafers in the weeks before their final demonstration. That had to await a laser that lived long enough for a complete plot of the lasing spectrum to be achieved. Over the
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and the optical field (the light) to this layer, reducing the current needed for lasing. Panish and Izuo
Hayashi independently developed the single heterostructure laser first and then the double heterostructure laser. However, publication of the announcement of the first room temperature
461:, majoring in physical chemistry and minoring in organic chemistry. His master's thesis involved a "series of measurements of the electric dipole behavior of some organic compounds," and he did not consider it very challenging. His advisor was Max Rogers, a Canadian and former student of
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compounds. Used to process reactor fuels, these compounds are highly reactive and dangerous, and after Panish had completed his experiments, another student was badly injured in an explosion. He resolved to work with less dangerous materials in future.
519:(GaAs). He planned a series of experiments to determine the phase diagrams among solid solutions of the various III-V compounds and to look into controlling the impurity elements that determine the electrical properties of those semiconductors.
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weekend in 1970, while Panish was at home, Hayashi tried a diode and it emitted a continuous-wave beam with just over 24 degrees
Celsius and he was able to plot the complete spectrum with the very slow equipment available at the time.
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and been rejected, but now they hired him. He started work in June 1964 in the Solid State
Electronics Research Laboratory, a group headed by physicist John Galt. He was part of a department working on III-V
616:, but it was mostly Japanese entrepreneurs, not AT&T, that ended up profiting from these technologies. The Japanese success was enhanced by Panish’s ex-partner Izuo Hayashi who had returned to Japan.
446:, where he was fascinated by a chemistry substitute teacher's description of his Ph.D. work at Columbia University, which involved synthesizing new organic compounds. He graduated in 1947, attended
434:
Morton Panish was born in
Brooklyn on April 8, 1929 to Isidore Panish and Fanny Panish (née Glasser) and grew up in Brooklyn. At the age of 12, he was strongly influenced by a book called
454:. He graduated in 1950. He met his future wife, Evelyn Chaim, in a chemistry class shortly after arriving in Denver. They married during his first year in graduate school.
562:, between two layers of a material such as aluminum gallium arsenide (a solid solution of AlAs and GaAs) that had a larger band gap; this confined the
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and
Aluminum Gallium Arsenide, which have the same lattice parameter. The idea was to place a material like GaAs, with a smaller
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Coleman, J J (1 September 2012). "The development of the semiconductor laser diode after the first demonstration in 1962".
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Panish, M. B. (1970). "Double heterostructure injection lasers with room-Temperature thresholds as low as 2300 A/cm²".
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Panish was elected to the
National Academy of Engineering in 1986 and to the National Academy of Sciences in 1987.
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achievements were obtained independently. Panish experimented with making wafers using a new form of liquid-phase
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Hayashi, I.; Panish, M.; Reinhart, F. K. (1971). "GaAs AlxGa1−xAs Double Heterostructure Injection Lasers".
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Hayashi, I.; Panish, M.; Foy, P. (1970). "Junction lasers which operate continuously at room temperature".
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515:, compounds in which elements from group III and group V of the periodic table are combined, for example,
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Hayashi, I.; Panish, M.; Foy, P. (April 1969). "A low-threshold room-temperature injection laser".
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We were burning : Japanese entrepreneurs and the forging of the electronic age
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1072:(Rev. and expanded ed.). Oxford : Oxford Univ. Press. pp. 152–157.
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The continuous wave semiconductor laser led directly to the light sources in
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1979 Electronics Division Award of the Electrochemical Society
526:, a physicist from Japan, to investigate a problem involving
465:, and Rogers supervised his Ph.D. work as well, which was on
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Steven Chaim Panish, Paul William Panish, Deborah Faye Panish
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continuously operating double heterostructure laser was by
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1986 Solid State Medalist of the Electrochemical Society
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A solution to the problem was proposed theoretically by
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The following are some of the major works by Panish:
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1994 John Bardeen Award of the Metallurgical Society
90:. Unsourced material may be challenged and removed.
751:1991 Morris N. Liebmann Memorial Award of the IEEE
538:groups in Syracuse and Schenectady as well as the
494:. The primary contract of this division, with the
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585:Room-temperature lasers were soon duplicated at
506:Before the Oak Ridge job, Panish had applied to
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181:for grammar, style, cohesion, tone, or spelling
1070:City of light : the story of fiber optics
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414:in 1970. For this achievement he shared the
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662:. Unsourced material may be challenged and
429:
53:Learn how and when to remove these messages
534:, were developed independently in 1962 by
450:for two years and then transferred to the
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955:"Morton B. Panish: Commemorative lecture"
726:Learn how and when to remove this message
223:Learn how and when to remove this message
205:Learn how and when to remove this message
150:Learn how and when to remove this message
1213:Fellows of the American Physical Society
1021:
748:1990 International Crystal Growth Award
591:Standard Telecommunication Laboratories
530:. The first such lasers, also known as
1218:Kyoto laureates in Advanced Technology
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1001:The Families of Mort and Evelyn Panish
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457:Panish enrolled in graduate school at
319:IEEE Morris N. Liebmann Memorial Award
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16:American physical chemist (born 1929)
1125:. Inamori Foundation. Archived from
1024:Semiconductor Science and Technology
964:. Inamori Foundation. Archived from
920:. Inamori Foundation. Archived from
660:adding citations to reliable sources
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478:From 1954 to 1957 Panish worked for
399:(born April 8, 1929) is an American
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88:adding citations to reliable sources
59:
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997:"Morton Panish (b. April 08, 1929)"
776:IEEE Journal of Quantum Electronics
298:Evelyn Wally Chaim (20 August 1951)
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759:Kyoto Prize in Advanced Technology
416:Kyoto Prize in Advanced Technology
14:
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593:and Nippon Electric Corporation (
34:This article has multiple issues.
1208:Scientists from New York (state)
1198:Michigan State University alumni
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540:Thomas J. Watson Research Center
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64:
23:
1203:Erasmus Hall High School alumni
522:In 1966, Galt asked Panish and
407:, developed a room-temperature
327:National Academy of Engineering
75:needs additional citations for
42:or discuss these issues on the
1:
1044:10.1088/0268-1242/27/9/090207
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480:Oak Ridge National Laboratory
354:Oak Ridge National Laboratory
1119:"Morton B. Panish: CItation"
745:1987 C & C Prize (Japan)
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323:National Academy of Sciences
7:
1193:University of Denver alumni
914:"Morton B. Panish: Profile"
482:in Tennessee, studying the
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1168:American physical chemists
863:Journal of Applied Physics
602:fiber-optic communication
553:in 1963 – a double
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1097:. New York: BasicBooks.
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444:Erasmus Hall High School
430:Early life and education
1188:Scientists at Bell Labs
1183:Brooklyn College alumni
1093:Johnstone, Bob (2000).
834:Applied Physics Letters
805:Applied Physics Letters
496:United States Air Force
484:chemical thermodynamics
500:thermonuclear weapons
1152:Photograph of Panish
1068:Hecht, Jeff (2004).
656:improve this section
452:University of Denver
289:Semiconductor lasers
84:improve this article
1036:2012SeScT..27i0207C
875:1971JAP....42.1929H
846:1970ApPhL..17..109H
817:1970ApPhL..16..326P
788:1969IJQE....5..211H
614:optical disc drives
542:of IBM and the MIT
412:semiconductor laser
675:"Morton B. Panish"
544:Lincoln Laboratory
344:Physical chemistry
261:Brooklyn, New York
185:You can assist by
99:"Morton B. Panish"
883:10.1063/1.1660469
854:10.1063/1.1653326
825:10.1063/1.1653213
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654:Please help
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579:Memorial Day
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528:laser diodes
524:Izuo Hayashi
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488:molten salts
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467:interhalogen
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77:verification
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1173:1929 births
1123:Kyoto Prize
962:Kyoto Prize
918:Kyoto Prize
869:(5): 1929.
267:Citizenship
1162:Categories
891:References
840:(3): 109.
716:April 2024
686:newspapers
403:who, with
386:Max Rogers
251:1929-04-08
195:April 2024
187:editing it
140:April 2024
110:newspapers
39:improve it
643:does not
508:Bell Labs
425:Biography
418:in 2001.
362:Bell Labs
45:talk page
1052:95751174
560:band gap
303:Children
270:American
1133:7 April
1032:Bibcode
1007:7 April
975:7 April
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871:Bibcode
842:Bibcode
813:Bibcode
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700:scholar
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574:epitaxy
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969:(PDF)
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1135:2014
1099:ISBN
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679:news
647:any
645:cite
612:and
358:Avco
325:and
245:Born
103:news
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