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devices in 2008. Due to early difficulties in manufacturing — in particular, inconsistencies and low yield — SiC JFETs remained a niche product at first, with correspondingly high costs. By 2018, these manufacturing issues had been mostly resolved. By then, SiC JFETs were also commonly
1275:
639:
The JFET gate is sometimes drawn in the middle of the channel (instead of at the drain or source electrode as in these examples). This symmetry suggests that "drain" and "source" are interchangeable, so the symbol should be used only for those JFETs where they are indeed interchangeable.
495:, and the JFET is normally operated in this constant-current region where device current is virtually unaffected by drain-source voltage. The JFET shares this constant-current characteristic with junction transistors and with thermionic tube (valve) tetrodes and pentodes.
1643:
506:
of this junction (see top figure), encroaching upon the conducting channel and restricting its cross-sectional area. The depletion layer is so-called because it is depleted of mobile carriers and so is electrically non-conducting for practical purposes.
331:
channel. In the n-type, if the voltage applied to the gate is negative with respect to the source, the current will be reduced (similarly in the p-type, if the voltage applied to the gate is positive with respect to the source). Because a JFET in a
943:
1388:
1498:
1150:
855:
2035:
415:
used in conjunction with conventional low-voltage
Silicon MOSFETs. In this combination, SiC JFET + Si MOSFET devices have the advantages of wide band-gap devices as well as the easy gate drive of MOSFETs.
1418:
If the channel doping is uniform, such that the depletion region thickness will grow in proportion to the square root of the absolute value of the gate–source voltage, then the channel thickness
1534:
1400:
is the saturation current at zero gate–source voltage, i.e. the maximum current that can flow through the FET from drain to source at any (permissible) drain-to-source voltage (see, e. g., the
643:
The symbol may be drawn inside a circle (representing the envelope of a discrete device) if the enclosure is important to circuit function, such as dual matched components in the same package.
487:
through a JFET is controlled by constricting the current-carrying channel. The current also depends on the electric field between source and drain (analogous to the difference in
1107:{\displaystyle I_{\text{D}}={\frac {bW}{L}}qN_{d}\mu _{n}V_{\text{DS}}={\frac {aW}{L}}qN_{d}\mu _{n}\left(1-{\sqrt {\frac {V_{\text{GS}}}{V_{\text{P}}}}}\right)V_{\text{DS}}.}
297:
is impeded or switched off completely. A JFET is usually conducting when there is zero voltage between its gate and source terminals. If a potential difference of the proper
1142:
771:
387:
in the course of trying to diagnose the reasons for their failures. Following
Shockley's theoretical treatment on JFET in 1952, a working practical JFET was made in 1953 by
1734:
1707:
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is formed on one or both sides of the channel, or surrounding it using a region with doping opposite to that of the channel, and biased using an ohmic gate contact (G).
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on either end of the hose). This current dependency is not supported by the characteristics shown in the diagram above a certain applied voltage. This is the
2342:
1270:{\displaystyle I_{\text{D}}={\frac {2I_{\text{DSS}}}{V_{\text{P}}^{2}}}\left(V_{\text{GS}}-V_{\text{P}}-{\frac {V_{\text{DS}}}{2}}\right)V_{\text{DS}}.}
1432:
2745:
2595:
779:
2313:
1821:
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1415:, the JFET drain current is most significantly affected by the gate–source voltage and barely affected by the drain–source voltage.
1958:
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In every case the arrow head shows the polarity of the P–N junction formed between the channel and the gate. As with an ordinary
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2129:
2215:
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3177:
2515:
1890:
1638:{\displaystyle g_{\text{m}}={\frac {2I_{\text{DSS}}}{|V_{\text{P}}|}}\left(1-{\frac {V_{\text{GS}}}{V_{\text{P}}}}\right),}
2321:
The envelope or enclosure symbol may be omitted from a symbol referencing this paragraph, where confusion would not result
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2738:
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502:: a voltage between the gate and the source is applied to reverse bias the gate-source pn-junction, thereby widening the
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2146:
1926:
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For JFETs the gate-source voltage at which drain current approaches zero is called the "gate-source cutoff voltage",
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116:
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406:
High-speed, high-voltage switching with JFETs became technically feasible following the commercial introduction of
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is the pinch-off voltage – the gate–source voltage at which the channel thickness goes to zero,
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In normal operation, the electric field developed by the gate blocks source–drain conduction to some extent.
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to current flow, which means less current would flow in the channel between the source and drain terminals.
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17:
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It is the gate–source voltage where the channel is completely cut off and the drain current becomes zero.
1999:(or sometimes triode) ... Beyond the knee of the ohmic region, the curves become essentially flat in the
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and fabrication technology would require decades of advances before FETs could actually be manufactured.
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1383:{\displaystyle I_{\text{DS}}=I_{\text{DSS}}\left(1-{\frac {V_{\text{GS}}}{V_{\text{P}}}}\right)^{2},}
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It is the minimum drain–source voltage at which the drain current essentially becomes constant. ...
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is achieved and drain-to-source conduction stops. Pinch-off occurs at a particular reverse bias (
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678:(which has insulating oxide between gate and channel), but much less than the base current of a
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were trying to build a FET, but failed in their repeated attempts. They discovered the
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the channel is completely depleted ... For JFETs the threshold voltage is called the
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At room temperature, JFET gate current (the reverse leakage of the gate-to-channel
479:. The flow of water through a hose can be controlled by squeezing it to reduce the
380:
313:
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144:
3255:
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2447:
The "pinch-off region" (or "saturation region") refers to operation of a FET with
2113:... For enhancement-mode MOSFETs the analogous quantity is the "threshold voltage"
698:. Additionally the JFET is less susceptible to damage from static charge buildup.
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90:
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1493:{\displaystyle b=a\left(1-{\sqrt {\frac {V_{\text{GS}}}{V_{\text{P}}}}}\right),}
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2532:– Small-signal, common-source, forward transadmittance (sometimes called g
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at which the drain current reaches a constant value for a given value of
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539:) varies considerably, even among devices of the same type. For example,
476:
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and Y. Watanabe applied for a patent for a similar device in 1950 termed
230:
2723:
2573:
850:{\displaystyle I_{\text{D}}={\frac {bW}{L}}qN_{d}\mu _{n}V_{\text{DS}},}
612:
Some JFET devices are symmetrical with respect to the source and drain.
301:
is applied between its gate and source terminals, the JFET will be more
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730:) is given by treating the channel as a rectangular bar of material of
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2079:(2nd ed.). Cambridge : Cambridge University Press. p. 120.
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242:
139:
1973:... for which the channel is completely depleted ... is called the
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510:
When the depletion layer spans the width of the conduction channel,
467:
348:), little current is drawn from circuits used as input to the gate.
32:
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2516:"JFETS: How They Work, How to Use Them, May 1969 Radio-Electronics"
655:
444:
320:. The depletion region has to be closed to enable current to flow.
1907:
For a discussion of JFET structure and operation, see for example
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Constriction of the conducting channel is accomplished using the
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can be expressed in terms of the zero-bias channel thickness
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3022:
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2814:
2203:
1891:"Third generation SiC JFET adds 1200 V and 650 V options"
573:
value that separates the linear and saturation regions.)
345:
471:
I–V characteristics and output plot of an n-channel JFET
403:(SIT). The SIT is a type of JFET with a short channel.
2513:
1528:
The transconductance for the junction FET is given by
3773:
2453:
1715:
1688:
1654:
1537:
1519:
is the channel thickness at zero gate–source voltage.
1435:
1306:
1153:
1123:
946:
782:
739:
455:
at each end form the source (S) and the drain (D). A
2335:"What's the difference between a MOSFET and a JFET?"
665:
2491:"Junction Field Effect Transistor or JFET Tutorial"
57:. Unsourced material may be challenged and removed.
2469:
2025:"5.11 THE JUNCTION FIELD-EFFECT TRANSISTOR (JFET)"
1728:
1701:
1682:is the maximum drain current. This is also called
1667:
1637:
1492:
1382:
1269:
1136:
1106:
849:
765:
658:is that the arrow of an N-channel device "points i
1841:
650:, the arrow points from P to N, the direction of
356:A succession of FET-like devices was patented by
3797:
1995:. ... This linear region of operation is called
1908:
1911:"§13.2 Junction field-effect transistor (JFET)"
1297:is often approximated in terms of gate bias as
2378:ohmic region ... also called the linear region
2364:"What is the Ohmic Region of a FET Transistor"
1884:
1882:
2739:
2589:
2141:(11th ed.). S. Chand. pp. 513–514.
876:= channel thickness for a given gate voltage,
711:The current in N-JFET due to a small voltage
2443:"What is the meaning of "pinch-off region"?"
2072:
1874:Semiconductor Devices for Power Conditioning
475:JFET operation can be compared to that of a
312:devices, as they rely on the principle of a
2399:. PHI Learning Pvt. Ltd. pp. 342–345.
1915:Electronics (fundamentals and applications)
1879:
2746:
2732:
2596:
2582:
2222:Do not confuse cutoff with pinch off. The
2127:
1280:
2753:
2603:
2569:Interactive Explanation of n-channel JFET
2564:Physics 111 Laboratory -- JFET Circuits I
2440:
1948:"Junction Field Effect Transistor (JFET)"
117:Learn how and when to remove this message
2388:
2386:
1888:
1144:, the drain current can be expressed as
630:
619:
466:
2393:Balbir Kumar and Shail B. Jain (2013).
2073:Horowitz, Paul; Hill, Winfield (1989).
371:in 1945. During the 1940s, researchers
256:-controlled in that they do not need a
14:
3798:
2210:. Technical Publications. p. 10.
2022:
1917:. New Age International. pp. 269
920:= n-type doping (donor) concentration,
706:
546:for the Temic J202 device varies from
2727:
2577:
2488:
2383:
2199:
2197:
2123:
2121:
1865:
1863:
701:
3178:Three-dimensional integrated circuit
2332:
2204:U. A. Bakshi; Atul P. Godse (2008).
1942:
1940:
1938:
690:, and is therefore used in some low-
686:) than the MOSFET, as well as lower
615:
431:to contain an abundance of positive
55:adding citations to reliable sources
26:
2959:Programmable unijunction transistor
2128:Mehta, V. K.; Mehta, Rohit (2008).
1901:
1889:Flaherty, Nick (October 18, 2018),
1523:
635:Circuit symbol for a p-channel JFET
521:) of the gate–source junction. The
344:(sometimes on the order of 10
308:JFETs are sometimes referred to as
24:
2860:Multi-gate field-effect transistor
2421:"Junction Field Effect Transistor"
2194:
2118:
2023:Sedra, Adel S.; Smith, Kenneth C.
1860:
1814:"Junction Field Effect Transistor"
221:) is one of the simplest types of
25:
3822:
2838:Insulated-gate bipolar transistor
2545:
2319:from the original on 2022-10-09.
2166:from the original on 2022-10-09.
2041:from the original on 2022-10-09.
1964:from the original on 2022-10-09.
1935:
666:Comparison with other transistors
360:in the 1920s and 1930s. However,
3783:
3082:Heterostructure barrier varactor
2809:Chemical field-effect transistor
2652:
2616:
2551:
2368:www.learningaboutelectronics.com
2260:at which the drain current is 0.
1802:from the original on 2022-10-09.
1783:
1408:characteristics diagram above).
654:when forward-biased. An English
215:junction field-effect transistor
203:
198:
138:
31:
3130:Mixed-signal integrated circuit
2507:
2482:
2434:
2413:
2396:Electronic Devices and Circuits
2356:
2345:from the original on 2021-05-17
2326:
2303:"A4.11 Envelope or Enclosure".
2296:
2285:from the original on 2022-10-09
2265:
1824:from the original on 2022-01-31
591:). Conversely, to switch off a
129:Type of field-effect transistor
42:needs additional citations for
2441:Scholberg, Kate (2017-03-23).
2106:, or the "pinch-off voltage",
2066:
2016:
1835:
1806:
1777:
1585:
1570:
1137:{\displaystyle I_{\text{DSS}}}
933:Then the drain current in the
766:{\displaystyle qN_{d}\mu _{n}}
443:), or of negative carriers or
423:The JFET is a long channel of
316:, which is devoid of majority
13:
1:
2130:"19 Field Effect Transistors"
1870:Junction Field-Effect Devices
1844:The Physics of Semiconductors
1770:
1729:{\displaystyle y_{\text{fs}}}
1702:{\displaystyle g_{\text{fs}}}
1675:is the pinchoff voltage, and
682:. The JFET has higher gain (
674:) is comparable to that of a
584:egative gate–source voltage (
566:is also used to refer to the
279:. By applying a reverse bias
3161:Silicon controlled rectifier
3023:Organic light-emitting diode
2913:Diffused junction transistor
2514:Kirt Blattenberger RF Cafe.
2180:Gate–source cut off voltage
1668:{\displaystyle V_{\text{P}}}
462:
418:
250:bipolar junction transistors
229:devices that can be used as
7:
2965:Static induction transistor
2902:Bipolar junction transistor
2854:MOS field-effect transistor
2826:Fin field-effect transistor
2703:Complementary feedback pair
2625:Bipolar junction transistor
2495:Basic Electronics Tutorials
2489:Storr, Wayne (2013-09-03).
2429:Saturation or Active Region
2333:Kopp, Emilie (2019-01-16).
1743:
680:bipolar junction transistor
580:-channel device requires a
554:. Typical values vary from
401:static induction transistor
367:JFET was first patented by
225:. JFETs are three-terminal
10:
3827:
3172:Static induction thyristor
1842:Grundmann, Marius (2010).
351:
340:configuration has a large
3709:
3609:
3576:
3508:
3445:
3373:
3341:(Hexode, Heptode, Octode)
3279:
3211:
3093:Hybrid integrated circuit
3057:
2985:
2936:Light-emitting transistor
2890:
2772:
2761:
2690:
2661:
2650:
2623:
2614:
2246:. ... The cutoff voltage
2138:Principles of electronics
1909:D. Chattopadhyay (2006).
1285:The drain current in the
595:-channel device requires
562:. (Confusingly, the term
287:terminal, the channel is
197:
190:
180:
172:
137:
3811:Field-effect transistors
3388:Backward-wave oscillator
3098:Light emitting capacitor
2954:Point-contact transistor
2924:Junction Gate FET (JFET)
2032:Microelectronic Circuits
1981:, voltage and occurs at
385:point-contact transistor
252:, JFETs are exclusively
3399:Crossed-field amplifier
2918:Field-effect transistor
2663:Field-effect transistor
2207:Electronics Engineering
1895:EeNews Power Management
1281:Constant-current region
937:can be approximated as
894:= electron charge = 1.6
870:= drain–source current,
732:electrical conductivity
694:, high input-impedance
223:field-effect transistor
182:Pin configuration
3568:Voltage-regulator tube
3135:MOS integrated circuit
3000:Constant-current diode
2976:Unijunction transistor
2477:more than a few volts.
2471:
2470:{\displaystyle V_{ds}}
2076:The art of electronics
1955:ETEE3212 Lecture Notes
1750:Constant-current diode
1730:
1703:
1669:
1639:
1494:
1384:
1271:
1138:
1108:
851:
767:
636:
628:
472:
377:Walter Houser Brattain
3637:Electrolytic detector
3410:Inductive output tube
3226:Low-dropout regulator
3141:Organic semiconductor
3072:Printed circuit board
2908:Darlington transistor
2755:Electronic components
2698:Darlington transistor
2691:Multiple transistors:
2472:
2425:Electronics Tutorials
2339:Power Electronic Tips
1818:Electronics Tutorials
1731:
1704:
1670:
1640:
1495:
1385:
1272:
1139:
1109:
852:
768:
634:
627:for an n-channel JFET
623:
470:
395:. Japanese engineers
159:is restricted when a
3455:Beam deflection tube
3124:Metal oxide varistor
3017:Light-emitting diode
2871:Thin-film transistor
2832:Floating-gate MOSFET
2560:at Wikimedia Commons
2451:
2232:is the value of the
1713:
1686:
1652:
1535:
1433:
1304:
1151:
1121:
944:
929:= pinch-off voltage.
780:
737:
652:conventional current
51:improve this article
3431:Traveling-wave tube
3231:Switching regulator
3067:Printed electronics
3044:Step recovery diode
2821:Depletion-load NMOS
2169:Pinch off Voltage (
1846:. Springer-Verlag.
1198:
707:Linear ohmic region
186:drain, gate, source
134:
3736:Crystal oscillator
3596:Variable capacitor
3271:Switched capacitor
3213:Voltage regulators
3087:Integrated circuit
2971:Tetrode transistor
2949:Pentode transistor
2942:Organic LET (OLET)
2929:Organic FET (OFET)
2536:-transconductance)
2467:
1726:
1699:
1665:
1635:
1490:
1380:
1267:
1184:
1134:
1104:
847:
763:
702:Mathematical model
637:
629:
473:
397:Jun-ichi Nishizawa
323:JFETs can have an
163:is applied to the
132:
3771:
3770:
3731:Ceramic resonator
3543:Mercury-arc valve
3495:Video camera tube
3447:Cathode-ray tubes
3207:
3206:
2815:Complementary MOS
2721:
2720:
2556:Media related to
2273:"J201 data sheet"
2224:pinch-off voltage
2217:978-81-8431-503-5
2052:pinch-off voltage
2043:At this value of
1853:978-3-642-13884-3
1793:linearsystems.com
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1413:saturation region
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1005:
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954:
909:electron mobility
888:= channel length,
841:
809:
790:
718:(that is, in the
616:Schematic symbols
576:To switch off an
564:pinch-off voltage
532:threshold voltage
529:) (also known as
523:pinch-off voltage
493:saturation region
362:materials science
358:Julius Lilienfeld
211:
210:
192:Electronic symbol
127:
126:
119:
101:
16:(Redirected from
3818:
3806:Transistor types
3788:
3787:
3779:
3625:electrical power
3510:Gas-filled tubes
3394:Cavity magnetron
3221:Linear regulator
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2725:
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2713:Long-tailed pair
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2639:Common collector
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2253:is the value of
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2020:
2014:
2013:
1963:
1952:
1944:
1933:
1932:
1905:
1899:
1897:
1886:
1877:
1867:
1858:
1857:
1839:
1833:
1832:
1830:
1829:
1810:
1804:
1803:
1801:
1790:
1781:
1735:
1733:
1732:
1727:
1725:
1724:
1721:
1708:
1706:
1705:
1700:
1698:
1697:
1694:
1674:
1672:
1671:
1666:
1664:
1663:
1660:
1644:
1642:
1641:
1636:
1631:
1627:
1626:
1624:
1623:
1620:
1614:
1613:
1610:
1604:
1591:
1589:
1588:
1583:
1582:
1579:
1573:
1567:
1566:
1565:
1562:
1552:
1547:
1546:
1543:
1524:Transconductance
1499:
1497:
1496:
1491:
1486:
1482:
1481:
1478:
1477:
1474:
1468:
1467:
1464:
1458:
1457:
1389:
1387:
1386:
1381:
1376:
1375:
1370:
1366:
1365:
1363:
1362:
1359:
1353:
1352:
1349:
1343:
1329:
1328:
1325:
1316:
1315:
1312:
1295:pinch-off region
1276:
1274:
1273:
1268:
1263:
1262:
1259:
1253:
1249:
1248:
1243:
1242:
1239:
1233:
1228:
1227:
1224:
1215:
1214:
1211:
1200:
1197:
1192:
1189:
1183:
1182:
1181:
1178:
1168:
1163:
1162:
1159:
1143:
1141:
1140:
1135:
1133:
1132:
1129:
1113:
1111:
1110:
1105:
1100:
1099:
1096:
1090:
1086:
1085:
1082:
1081:
1078:
1072:
1071:
1068:
1062:
1061:
1048:
1047:
1038:
1037:
1025:
1020:
1012:
1007:
1006:
1003:
997:
996:
987:
986:
974:
969:
961:
956:
955:
952:
897:
882:= channel width,
856:
854:
853:
848:
843:
842:
839:
833:
832:
823:
822:
810:
805:
797:
792:
791:
788:
772:
770:
769:
764:
762:
761:
752:
751:
684:transconductance
561:
557:
553:
549:
483:and the flow of
381:William Shockley
314:depletion region
295:electric current
268:channel between
264:flows through a
207:
202:
183:
145:Electric current
142:
135:
131:
122:
115:
111:
108:
102:
100:
59:
35:
27:
21:
3826:
3825:
3821:
3820:
3819:
3817:
3816:
3815:
3796:
3795:
3794:
3782:
3774:
3772:
3767:
3705:
3620:audio and video
3605:
3572:
3504:
3441:
3369:
3350:Photomultiplier
3275:
3203:
3151:Quantum circuit
3059:
3053:
2995:Avalanche diode
2981:
2893:
2886:
2775:
2764:
2757:
2752:
2722:
2717:
2686:
2657:
2648:
2621:
2610:
2602:
2548:
2543:
2542:
2535:
2530:
2520:
2518:
2512:
2508:
2499:
2497:
2487:
2483:
2458:
2454:
2452:
2449:
2448:
2439:
2435:
2419:
2418:
2414:
2407:
2391:
2384:
2372:
2370:
2362:
2361:
2357:
2348:
2346:
2331:
2327:
2316:
2309:
2306:ANSI Y32.2-1975
2302:
2301:
2297:
2288:
2286:
2282:
2275:
2271:
2270:
2266:
2259:
2252:
2245:
2238:
2231:
2218:
2202:
2195:
2186:
2175:
2163:
2149:
2132:
2126:
2119:
2112:
2105:
2087:
2071:
2067:
2060:
2054:and is denoted
2049:
2038:
2027:
2021:
2017:
1994:
1987:
1972:
1961:
1950:
1946:
1945:
1936:
1929:
1906:
1902:
1887:
1880:
1868:
1861:
1854:
1840:
1836:
1827:
1825:
1812:
1811:
1807:
1799:
1788:
1786:"Discrete JFET"
1782:
1778:
1773:
1746:
1738:transadmittance
1720:
1716:
1714:
1711:
1710:
1693:
1689:
1687:
1684:
1683:
1681:
1659:
1655:
1653:
1650:
1649:
1619:
1615:
1609:
1605:
1603:
1596:
1592:
1584:
1578:
1574:
1569:
1568:
1561:
1557:
1553:
1551:
1542:
1538:
1536:
1533:
1532:
1526:
1512:
1473:
1469:
1463:
1459:
1456:
1449:
1445:
1434:
1431:
1430:
1399:
1371:
1358:
1354:
1348:
1344:
1342:
1335:
1331:
1330:
1324:
1320:
1311:
1307:
1305:
1302:
1301:
1283:
1258:
1254:
1238:
1234:
1232:
1223:
1219:
1210:
1206:
1205:
1201:
1193:
1188:
1177:
1173:
1169:
1167:
1158:
1154:
1152:
1149:
1148:
1128:
1124:
1122:
1119:
1118:
1095:
1091:
1077:
1073:
1067:
1063:
1060:
1053:
1049:
1043:
1039:
1033:
1029:
1013:
1011:
1002:
998:
992:
988:
982:
978:
962:
960:
951:
947:
945:
942:
941:
928:
918:
905:
895:
869:
838:
834:
828:
824:
818:
814:
798:
796:
787:
783:
781:
778:
777:
757:
753:
747:
743:
738:
735:
734:
717:
709:
704:
668:
618:
605:
590:
572:
559:
555:
551:
547:
545:
537:cut-off voltage
528:
520:
504:depletion layer
485:electric charge
465:
421:
408:Silicon carbide
389:George C. Dacey
369:Heinrich Welker
354:
342:input impedance
318:charge carriers
262:Electric charge
258:biasing current
181:
168:
130:
123:
112:
106:
103:
60:
58:
48:
36:
23:
22:
15:
12:
11:
5:
3824:
3814:
3813:
3808:
3793:
3792:
3769:
3768:
3766:
3765:
3764:
3763:
3758:
3748:
3743:
3738:
3733:
3728:
3727:
3726:
3715:
3713:
3707:
3706:
3704:
3703:
3702:
3701:
3699:Wollaston wire
3691:
3686:
3681:
3676:
3671:
3666:
3665:
3664:
3659:
3649:
3644:
3639:
3634:
3633:
3632:
3627:
3622:
3613:
3611:
3607:
3606:
3604:
3603:
3598:
3593:
3592:
3591:
3580:
3578:
3574:
3573:
3571:
3570:
3565:
3560:
3555:
3550:
3545:
3540:
3535:
3530:
3525:
3520:
3514:
3512:
3506:
3505:
3503:
3502:
3497:
3492:
3487:
3482:
3480:Selectron tube
3477:
3472:
3470:Magic eye tube
3467:
3462:
3457:
3451:
3449:
3443:
3442:
3440:
3439:
3434:
3428:
3423:
3418:
3413:
3407:
3402:
3396:
3391:
3384:
3382:
3371:
3370:
3368:
3367:
3362:
3357:
3352:
3347:
3342:
3336:
3331:
3326:
3321:
3316:
3311:
3306:
3301:
3296:
3291:
3285:
3283:
3277:
3276:
3274:
3273:
3268:
3263:
3258:
3253:
3248:
3243:
3238:
3233:
3228:
3223:
3217:
3215:
3209:
3208:
3205:
3204:
3202:
3201:
3196:
3191:
3186:
3181:
3175:
3169:
3164:
3158:
3153:
3148:
3143:
3138:
3132:
3127:
3121:
3116:
3111:
3106:
3101:
3095:
3090:
3084:
3079:
3074:
3069:
3063:
3061:
3055:
3054:
3052:
3051:
3046:
3041:
3039:Schottky diode
3036:
3031:
3026:
3020:
3014:
3008:
3003:
2997:
2991:
2989:
2983:
2982:
2980:
2979:
2973:
2968:
2962:
2956:
2951:
2946:
2945:
2944:
2933:
2932:
2931:
2926:
2915:
2910:
2905:
2898:
2896:
2888:
2887:
2885:
2884:
2879:
2874:
2868:
2863:
2857:
2851:
2846:
2841:
2835:
2829:
2823:
2818:
2812:
2806:
2801:
2796:
2791:
2786:
2780:
2778:
2767:
2759:
2758:
2751:
2750:
2743:
2736:
2728:
2719:
2718:
2716:
2715:
2710:
2705:
2700:
2694:
2692:
2688:
2687:
2685:
2684:
2679:
2674:
2668:
2666:
2659:
2658:
2651:
2649:
2647:
2646:
2641:
2636:
2634:Common emitter
2630:
2628:
2622:
2615:
2612:
2611:
2601:
2600:
2593:
2586:
2578:
2572:
2571:
2566:
2561:
2547:
2546:External links
2544:
2541:
2540:
2533:
2528:
2506:
2481:
2464:
2461:
2457:
2433:
2412:
2405:
2382:
2355:
2325:
2295:
2264:
2257:
2250:
2243:
2236:
2229:
2216:
2193:
2184:
2173:
2148:978-8121924504
2147:
2117:
2110:
2103:
2085:
2065:
2058:
2047:
2015:
1992:
1985:
1970:
1934:
1928:978-8122417807
1927:
1900:
1878:
1859:
1852:
1834:
1805:
1775:
1774:
1772:
1769:
1768:
1767:
1762:
1757:
1752:
1745:
1742:
1719:
1692:
1679:
1658:
1646:
1645:
1634:
1630:
1618:
1608:
1602:
1599:
1595:
1587:
1577:
1572:
1560:
1556:
1550:
1541:
1525:
1522:
1521:
1520:
1514:
1510:
1501:
1500:
1489:
1485:
1472:
1462:
1455:
1452:
1448:
1444:
1441:
1438:
1397:
1391:
1390:
1379:
1374:
1369:
1357:
1347:
1341:
1338:
1334:
1323:
1319:
1310:
1282:
1279:
1278:
1277:
1266:
1257:
1252:
1246:
1237:
1231:
1222:
1218:
1209:
1204:
1196:
1187:
1176:
1172:
1166:
1157:
1127:
1115:
1114:
1103:
1094:
1089:
1076:
1066:
1059:
1056:
1052:
1046:
1042:
1036:
1032:
1028:
1023:
1019:
1016:
1010:
1001:
995:
991:
985:
981:
977:
972:
968:
965:
959:
950:
931:
930:
926:
921:
916:
912:
903:
899:
889:
883:
877:
871:
867:
858:
857:
846:
837:
831:
827:
821:
817:
813:
808:
804:
801:
795:
786:
760:
756:
750:
746:
742:
715:
708:
705:
703:
700:
667:
664:
625:Circuit symbol
617:
614:
603:
588:
570:
543:
526:
518:
464:
461:
453:Ohmic contacts
420:
417:
353:
350:
310:depletion-mode
293:, so that the
266:semiconducting
241:, or to build
231:electronically
209:
208:
195:
194:
188:
187:
184:
178:
177:
174:
170:
169:
157:p-channel JFET
143:
128:
125:
124:
107:September 2015
39:
37:
30:
9:
6:
4:
3:
2:
3823:
3812:
3809:
3807:
3804:
3803:
3801:
3791:
3786:
3781:
3780:
3777:
3762:
3761:mercury relay
3759:
3757:
3754:
3753:
3752:
3749:
3747:
3744:
3742:
3739:
3737:
3734:
3732:
3729:
3725:
3722:
3721:
3720:
3717:
3716:
3714:
3712:
3708:
3700:
3697:
3696:
3695:
3692:
3690:
3687:
3685:
3682:
3680:
3677:
3675:
3672:
3670:
3667:
3663:
3660:
3658:
3655:
3654:
3653:
3650:
3648:
3645:
3643:
3640:
3638:
3635:
3631:
3628:
3626:
3623:
3621:
3618:
3617:
3615:
3614:
3612:
3608:
3602:
3599:
3597:
3594:
3590:
3587:
3586:
3585:
3584:Potentiometer
3582:
3581:
3579:
3575:
3569:
3566:
3564:
3561:
3559:
3556:
3554:
3551:
3549:
3546:
3544:
3541:
3539:
3536:
3534:
3531:
3529:
3526:
3524:
3521:
3519:
3516:
3515:
3513:
3511:
3507:
3501:
3500:Williams tube
3498:
3496:
3493:
3491:
3488:
3486:
3483:
3481:
3478:
3476:
3473:
3471:
3468:
3466:
3463:
3461:
3458:
3456:
3453:
3452:
3450:
3448:
3444:
3438:
3435:
3432:
3429:
3427:
3424:
3422:
3419:
3417:
3414:
3411:
3408:
3406:
3403:
3400:
3397:
3395:
3392:
3389:
3386:
3385:
3383:
3380:
3376:
3372:
3366:
3363:
3361:
3358:
3356:
3353:
3351:
3348:
3346:
3343:
3340:
3337:
3335:
3332:
3330:
3327:
3325:
3322:
3320:
3319:Fleming valve
3317:
3315:
3312:
3310:
3307:
3305:
3302:
3300:
3297:
3295:
3292:
3290:
3287:
3286:
3284:
3282:
3278:
3272:
3269:
3267:
3264:
3262:
3259:
3257:
3254:
3252:
3249:
3247:
3244:
3242:
3239:
3237:
3234:
3232:
3229:
3227:
3224:
3222:
3219:
3218:
3216:
3214:
3210:
3200:
3197:
3195:
3192:
3190:
3187:
3185:
3182:
3179:
3176:
3173:
3170:
3168:
3165:
3162:
3159:
3157:
3154:
3152:
3149:
3147:
3146:Photodetector
3144:
3142:
3139:
3136:
3133:
3131:
3128:
3125:
3122:
3120:
3117:
3115:
3114:Memtransistor
3112:
3110:
3107:
3105:
3102:
3099:
3096:
3094:
3091:
3088:
3085:
3083:
3080:
3078:
3075:
3073:
3070:
3068:
3065:
3064:
3062:
3056:
3050:
3047:
3045:
3042:
3040:
3037:
3035:
3032:
3030:
3027:
3024:
3021:
3018:
3015:
3012:
3009:
3007:
3004:
3001:
2998:
2996:
2993:
2992:
2990:
2988:
2984:
2977:
2974:
2972:
2969:
2966:
2963:
2960:
2957:
2955:
2952:
2950:
2947:
2943:
2940:
2939:
2937:
2934:
2930:
2927:
2925:
2922:
2921:
2919:
2916:
2914:
2911:
2909:
2906:
2903:
2900:
2899:
2897:
2895:
2889:
2883:
2880:
2878:
2875:
2872:
2869:
2867:
2864:
2861:
2858:
2855:
2852:
2850:
2847:
2845:
2842:
2839:
2836:
2833:
2830:
2827:
2824:
2822:
2819:
2816:
2813:
2810:
2807:
2805:
2802:
2800:
2797:
2795:
2792:
2790:
2787:
2785:
2782:
2781:
2779:
2777:
2771:
2768:
2766:
2763:Semiconductor
2760:
2756:
2749:
2744:
2742:
2737:
2735:
2730:
2729:
2726:
2714:
2711:
2709:
2706:
2704:
2701:
2699:
2696:
2695:
2693:
2689:
2683:
2680:
2678:
2675:
2673:
2672:Common source
2670:
2669:
2667:
2664:
2660:
2655:
2645:
2642:
2640:
2637:
2635:
2632:
2631:
2629:
2626:
2619:
2613:
2609:
2606:
2599:
2594:
2592:
2587:
2585:
2580:
2579:
2576:
2570:
2567:
2565:
2562:
2559:
2554:
2550:
2549:
2537:
2531:
2517:
2510:
2496:
2492:
2485:
2478:
2462:
2459:
2455:
2444:
2437:
2430:
2426:
2422:
2416:
2408:
2406:9788120348448
2402:
2398:
2397:
2389:
2387:
2379:
2369:
2365:
2359:
2344:
2340:
2336:
2329:
2322:
2315:
2308:
2307:
2299:
2281:
2274:
2268:
2261:
2256:
2249:
2242:
2235:
2228:
2225:
2219:
2213:
2209:
2208:
2200:
2198:
2190:
2188:
2183:
2177:
2172:
2162:
2158:
2154:
2150:
2144:
2140:
2139:
2131:
2124:
2122:
2114:
2109:
2102:
2096:
2092:
2088:
2086:0-521-37095-7
2082:
2078:
2077:
2069:
2062:
2057:
2053:
2046:
2037:
2033:
2026:
2019:
2012:
2011:of operation.
2010:
2006:
2002:
1998:
1991:
1984:
1980:
1976:
1969:
1960:
1956:
1949:
1943:
1941:
1939:
1930:
1924:
1920:
1916:
1912:
1904:
1896:
1892:
1885:
1883:
1875:
1871:
1866:
1864:
1855:
1849:
1845:
1838:
1823:
1819:
1815:
1809:
1798:
1794:
1787:
1780:
1776:
1766:
1763:
1761:
1758:
1756:
1753:
1751:
1748:
1747:
1741:
1739:
1717:
1690:
1678:
1656:
1632:
1628:
1616:
1606:
1600:
1597:
1593:
1575:
1558:
1554:
1548:
1539:
1531:
1530:
1529:
1518:
1515:
1509:
1506:
1505:
1504:
1487:
1483:
1470:
1460:
1453:
1450:
1446:
1442:
1439:
1436:
1429:
1428:
1427:
1425:
1421:
1416:
1414:
1409:
1407:
1403:
1396:
1377:
1372:
1367:
1355:
1345:
1339:
1336:
1332:
1321:
1317:
1308:
1300:
1299:
1298:
1296:
1292:
1288:
1264:
1255:
1250:
1244:
1235:
1229:
1220:
1216:
1207:
1202:
1194:
1185:
1174:
1170:
1164:
1155:
1147:
1146:
1145:
1125:
1101:
1092:
1087:
1074:
1064:
1057:
1054:
1050:
1044:
1040:
1034:
1030:
1026:
1021:
1017:
1014:
1008:
999:
993:
989:
983:
979:
975:
970:
966:
963:
957:
948:
940:
939:
938:
936:
935:linear region
925:
922:
919:
913:
910:
906:
900:
893:
890:
887:
884:
881:
878:
875:
872:
866:
863:
862:
861:
844:
835:
829:
825:
819:
815:
811:
806:
802:
799:
793:
784:
776:
775:
774:
758:
754:
748:
744:
740:
733:
729:
728:triode region
725:
721:
714:
699:
697:
693:
689:
688:flicker noise
685:
681:
677:
673:
663:
661:
657:
653:
649:
644:
641:
633:
626:
622:
613:
610:
607:
602:
598:
594:
587:
583:
579:
574:
569:
565:
542:
538:
534:
533:
524:
517:
513:
508:
505:
501:
496:
494:
490:
486:
482:
481:cross section
478:
469:
460:
458:
454:
450:
446:
442:
438:
434:
430:
426:
425:semiconductor
416:
413:
409:
404:
402:
398:
394:
390:
386:
382:
378:
374:
370:
365:
363:
359:
349:
347:
343:
339:
335:
334:common source
330:
326:
321:
319:
315:
311:
306:
304:
300:
296:
292:
291:
286:
282:
278:
275:
271:
267:
263:
259:
255:
251:
246:
244:
240:
236:
232:
228:
227:semiconductor
224:
220:
216:
206:
201:
196:
193:
189:
185:
179:
175:
171:
166:
162:
158:
154:
150:
146:
141:
136:
121:
118:
110:
99:
96:
92:
89:
85:
82:
78:
75:
71:
68: –
67:
63:
62:Find sources:
56:
52:
46:
45:
40:This article
38:
34:
29:
28:
19:
3518:Cold cathode
3485:Storage tube
3375:Vacuum tubes
3324:Neutron tube
3299:Beam tetrode
3281:Vacuum tubes
2923:
2866:Power MOSFET
2677:Common drain
2526:
2525:
2519:. Retrieved
2509:
2498:. Retrieved
2494:
2484:
2446:
2436:
2428:
2424:
2415:
2395:
2377:
2371:. Retrieved
2367:
2358:
2347:. Retrieved
2338:
2328:
2320:
2305:
2298:
2287:. Retrieved
2267:
2254:
2247:
2240:
2233:
2226:
2223:
2221:
2206:
2181:
2179:
2170:
2168:
2167:
2137:
2107:
2100:
2098:
2075:
2068:
2055:
2051:
2044:
2042:
2031:
2018:
2008:
2004:
2000:
1996:
1989:
1982:
1978:
1974:
1967:
1965:
1954:
1918:
1914:
1903:
1894:
1873:
1843:
1837:
1826:. Retrieved
1817:
1808:
1792:
1784:Hall, John.
1779:
1676:
1647:
1527:
1516:
1507:
1502:
1423:
1419:
1417:
1412:
1410:
1405:
1401:
1394:
1392:
1294:
1290:
1286:
1284:
1117:In terms of
1116:
934:
932:
923:
914:
901:
891:
885:
879:
873:
864:
859:
727:
723:
719:
712:
710:
669:
659:
645:
642:
638:
611:
608:
600:
596:
592:
585:
581:
577:
575:
567:
563:
540:
536:
530:
522:
515:
511:
509:
500:field effect
497:
492:
474:
448:
440:
435:carriers or
422:
412:wide-bandgap
405:
373:John Bardeen
366:
355:
338:common drain
322:
307:
288:
284:
273:
269:
247:
218:
214:
212:
164:
156:
152:
148:
113:
104:
94:
87:
80:
73:
61:
49:Please help
44:verification
41:
18:Junction FET
3790:Electronics
3684:Transformer
3426:Sutton tube
3266:Charge pump
3119:Memory cell
3049:Zener diode
3011:Laser diode
2894:transistors
2776:transistors
2682:Common gate
2644:Common base
477:garden hose
457:pn-junction
393:Ian M. Ross
233:controlled
3800:Categories
3756:reed relay
3746:Parametron
3679:Thermistor
3657:resettable
3616:Connector
3577:Adjustable
3553:Nixie tube
3523:Crossatron
3490:Trochotron
3465:Iconoscope
3460:Charactron
3437:X-ray tube
3309:Compactron
3289:Acorn tube
3246:Buck–boost
3167:Solaristor
3029:Photodiode
3006:Gunn diode
3002:(CLD, CRD)
2784:Transistor
2608:amplifiers
2605:Transistor
2521:2021-01-04
2500:2022-10-07
2373:2020-12-13
2349:2022-06-16
2289:2021-01-22
2005:saturation
1828:2022-06-19
1771:References
1287:saturation
898:10 C,
427:material,
243:amplifiers
77:newspapers
3719:Capacitor
3563:Trigatron
3558:Thyratron
3548:Neon lamp
3475:Monoscope
3355:Phototube
3339:Pentagrid
3304:Barretter
3189:Trancitor
3184:Thyristor
3109:Memristor
3034:PIN diode
2811:(ChemFET)
2157:741256429
1979:pinch-off
1975:threshold
1966:value of
1601:−
1454:−
1340:−
1230:−
1217:−
1058:−
1041:μ
990:μ
826:μ
755:μ
512:pinch-off
463:Functions
445:electrons
419:Structure
303:resistive
277:terminals
239:resistors
3741:Inductor
3711:Reactive
3689:Varistor
3669:Resistor
3647:Antifuse
3533:Ignitron
3528:Dekatron
3416:Klystron
3405:Gyrotron
3334:Nuvistor
3251:Split-pi
3137:(MOS IC)
3104:Memistor
2862:(MuGFET)
2856:(MOSFET)
2828:(FinFET)
2343:Archived
2314:Archived
2280:Archived
2185:GS (off)
2161:Archived
2095:19125711
2036:Archived
1959:Archived
1822:Archived
1797:Archived
1744:See also
672:junction
656:mnemonic
599:ositive
489:pressure
299:polarity
235:switches
3642:Ferrite
3610:Passive
3601:Varicap
3589:digital
3538:Krytron
3360:Tetrode
3345:Pentode
3199:Varicap
3180:(3D IC)
3156:RF CMOS
3060:devices
2834:(FGMOS)
2765:devices
2708:Cascode
2251:GS(off)
2104:GS(OFF)
1993:GS(OFF)
1876:, 1982.
1503:where
1411:In the
696:op-amps
544:GS(off)
352:History
290:pinched
281:voltage
254:voltage
248:Unlike
161:voltage
91:scholar
3776:Portal
3674:Switch
3365:Triode
3329:Nonode
3294:Audion
3174:(SITh)
3058:Other
3025:(OLED)
2987:Diodes
2938:(LET)
2920:(FET)
2892:Other
2840:(IGBT)
2817:(CMOS)
2804:BioFET
2799:BiCMOS
2403:
2214:
2155:
2145:
2093:
2083:
2009:region
2001:active
1925:
1850:
1765:MESFET
1760:MOSFET
1755:Fetron
1648:where
1393:where
1291:active
860:where
720:linear
676:MOSFET
556:−0.3 V
548:−0.8 V
449:n-type
441:p-type
433:charge
410:(SiC)
379:, and
329:p-type
325:n-type
270:source
176:Active
149:source
93:
86:
79:
72:
66:"JFET"
64:
3751:Relay
3724:types
3662:eFUSE
3433:(TWT)
3421:Maser
3412:(IOT)
3401:(CFA)
3390:(BWO)
3314:Diode
3261:SEPIC
3241:Boost
3194:TRIAC
3163:(SCR)
3126:(MOV)
3100:(LEC)
3019:(LED)
2978:(UJT)
2967:(SIT)
2961:(PUT)
2904:(BJT)
2873:(TFT)
2849:LDMOS
2844:ISFET
2317:(PDF)
2310:(PDF)
2283:(PDF)
2276:(PDF)
2164:(PDF)
2133:(PDF)
2039:(PDF)
2028:(PDF)
1997:ohmic
1977:, or
1962:(PDF)
1951:(PDF)
1800:(PDF)
1789:(PDF)
1736:(for
724:ohmic
692:noise
648:diode
560:−10 V
437:holes
429:doped
283:to a
274:drain
155:in a
153:drain
147:from
98:JSTOR
84:books
3694:Wire
3652:Fuse
3236:Buck
3089:(IC)
3077:DIAC
3013:(LD)
2882:UMOS
2877:VMOS
2794:PMOS
2789:NMOS
2774:MOS
2558:JFET
2401:ISBN
2212:ISBN
2153:OCLC
2143:ISBN
2091:OCLC
2081:ISBN
2003:(or
1923:ISBN
1848:ISBN
552:−4 V
391:and
346:ohms
285:gate
272:and
219:JFET
213:The
173:Type
165:gate
133:JFET
70:news
3256:Ćuk
1740:).
1709:or
1680:DSS
1563:DSS
1426:as
1398:DSS
1326:DSS
1293:or
1289:or
1179:DSS
1130:DSS
773::
726:or
722:or
662:".
558:to
550:to
535:or
451:).
336:or
327:or
245:.
237:or
151:to
53:by
3802::
3630:RF
3379:RF
2534:fs
2529:fs
2524:.
2493:.
2445:.
2427:.
2423:.
2385:^
2376:.
2366:.
2341:.
2337:.
2312:.
2278:.
2258:GS
2244:GS
2237:DS
2220:.
2196:^
2176:).
2159:.
2151:.
2135:.
2120:^
2097:.
2089:.
2048:GS
2034:.
2030:.
2007:)
1988:=
1986:GS
1971:GS
1957:.
1953:.
1937:^
1921:.
1919:ff
1913:.
1893:,
1881:^
1872:,
1862:^
1820:.
1816:.
1795:.
1791:.
1722:fs
1695:fs
1611:GS
1465:GS
1350:GS
1313:DS
1260:DS
1240:DS
1212:GS
1097:DS
1069:GS
1004:DS
907:=
840:DS
716:DS
606:.
604:GS
589:GS
571:DS
525:(V
519:GS
375:,
260:.
3778::
3381:)
3377:(
2747:e
2740:t
2733:v
2665::
2627::
2597:e
2590:t
2583:v
2527:y
2503:.
2463:s
2460:d
2456:V
2409:.
2352:.
2292:.
2255:V
2248:V
2241:V
2234:V
2230:P
2227:V
2187:.
2182:V
2174:P
2171:V
2111:P
2108:V
2101:V
2061:.
2059:P
2056:V
2045:v
1990:V
1983:v
1968:v
1931:.
1898:.
1856:.
1831:.
1718:y
1691:g
1677:I
1661:P
1657:V
1633:,
1629:)
1621:P
1617:V
1607:V
1598:1
1594:(
1586:|
1580:P
1576:V
1571:|
1559:I
1555:2
1549:=
1544:m
1540:g
1517:a
1511:P
1508:V
1488:,
1484:)
1475:P
1471:V
1461:V
1451:1
1447:(
1443:a
1440:=
1437:b
1424:a
1420:b
1406:V
1404:–
1402:I
1395:I
1378:,
1373:2
1368:)
1360:P
1356:V
1346:V
1337:1
1333:(
1322:I
1318:=
1309:I
1265:.
1256:V
1251:)
1245:2
1236:V
1225:P
1221:V
1208:V
1203:(
1195:2
1190:P
1186:V
1175:I
1171:2
1165:=
1160:D
1156:I
1126:I
1102:.
1093:V
1088:)
1079:P
1075:V
1065:V
1055:1
1051:(
1045:n
1035:d
1031:N
1027:q
1022:L
1018:W
1015:a
1009:=
1000:V
994:n
984:d
980:N
976:q
971:L
967:W
964:b
958:=
953:D
949:I
927:P
924:V
917:d
915:N
911:,
904:n
902:μ
896:×
892:q
886:L
880:W
874:b
868:D
865:I
845:,
836:V
830:n
820:d
816:N
812:q
807:L
803:W
800:b
794:=
789:D
785:I
759:n
749:d
745:N
741:q
713:V
660:n
601:V
597:p
593:p
586:V
582:n
578:n
568:V
541:V
527:p
516:V
447:(
439:(
217:(
167:.
120:)
114:(
109:)
105:(
95:·
88:·
81:·
74:·
47:.
20:)
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