James R. Biard - Knowledge

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and the IR light came out around the edge of the mesa. On the tunnel diodes, the light could be seen at the edges of the chip. They did not emit very much light, but it was enough for us to see with the IR image converter microscope. That led us to create a structure in which the N-type surface of the chip had spaced contacts, so the light emitted at the junction could be emitted from most of the top surface of the chip. Gary made those spaced N-type Ohmic contacts by tin plating metal wires and alloying the tin on the surface of the wire to the N-type GaAs surface. With a rectangular chip of GaAs, most of the light emitted at the junction was reflected at the exit surface. The index of refraction of GaAs is 3.6 and air has an index of 1.0. This means that ~97% of the light emitted at the junction is totally internally reflected at the exit surface. The highest quantum efficiency that can be expected from a rectangular LED chip is ~2%, even with an anti-reflection coating on the optical exit surface. This total internal reflection problem led us to come up with the hemispherical dome LED. In this diode the N-type GaAs substrate is shaped into a hemisphere and the hemispherical surface is covered with an anti-reflection coating (preferably silicon nitride) to minimize front surface reflection. The LED P-N junction is in the center of the flat face of the hemisphere. The central P-type region is covered with the anode Ohmic contact. The cathode Ohmic contact was a donut shape that covered most of the remainder of the N-type flat surface of the hemisphere. By making the diameter of the hemisphere 3.6 times larger than the diameter of the P-type layer, all the light at the exit surface of the hemisphere was inside the critical angle for total internal reflection. This resulted in a huge increase in quantum efficiency because up to 50% of the light emitted at the junction could escape from the chip at the hemispherical exit surface. The other half of the light went toward the P-type Ohmic contact and was absorbed in the GaAs. The absorption in the thicker N-type GaAs between the junction and exit surface resulted in less improvement in quantum efficiency than what we had hoped for, however, the dome LEDs were much more efficient.

280:. His father, James Christopher "Jimmy" Biard of Biardstown, worked as a farmer and a Dr. Pepper route salesman for the local Dr. Pepper company. Bob’s mother, Mary Ruth Biard (née Bills), worked as a retail sales person at the Collegiate Shop in downtown Paris. She also sang in quartets at weddings and funerals. When Bob was a child, his pediatrician recommended a diet of mashed overripe bananas, stewed apples, and homemade dried cottage cheese as a remedy for digestive issues. As a Dr. Pepper salesman, Jimmy knew all of the local grocery store owners and they would save the overripe bananas for Bob. Mary would make the cottage cheese by placing unpasteurized milk in a cup towel and hanging it on an outdoor clothes line. 569:. The arrangement provided a switching function in which the switch was completely electrically isolated from the LED that drove it. The transistor operated in response to light emitted from the LED when forward current bias was generated across the junction of the diode. When emitted light struck the surface of the transistor, it was absorbed in the regions of both the emitter-base and base-collector junctions causing the transistor to conduct. This photoconductive transistor could be rapidly turned on and off by intensity modulating the LED at a very high frequency using high frequency alternating voltage. Prior to their invention, complete 328:. From 1956-57, he worked part-time as an instructor of undergraduate Electrical Engineering courses. He also worked part-time as an Assistance Research Engineer for the Texas Engineering Experiment Station in charge of operation and maintenance of EESEAC, the Station's analog computer. During grad school, he also designed several vacuum tube DC amplifiers. His PhD dissertation was entitled, "Further Investigation of Electronic Multiplication of Voltages By Use of Logarithms". While a student at Texas A&M, he met his wife Amelia Ruth Clark. They married on May 23, 1952, and later moved to 354: 670: 606: 793: 839: 341: 818:

such as a spot scan microscope, a radiation pattern plotter, and constant temperature burn-in racks for LEDs. He also contributed to the development of infrared detector test equipment and design of the Spectronics, Inc. Long Wavelength Infrared Test Set. He also directed R&D activities on the InAs Phototransistor and P-N Junction Cold Cathodes. In 1978, he worked on integrated circuits consisting of an LED driver and pin diode receiver used for digital

661:(TTL) circuits had been invented, yet it was written broadly enough to cover the Schottky clamped TTL ICs using platinum silicide Schottky diodes, which were much more predictable and manufacturable than the aluminum Schottky diodes he originally used. His patent ultimately improved the switching speed of saturated logic designs, such as the Schottky-TTL, at a low cost. In 1985, Biard received the Patrick E. Haggerty Innovation Award for this patent. 525:. Infrared light was sent through the holes or blocked by the card, which not only significantly reduced the size and power required, but also improved the reliability. In November 1978, Tom M. Hyltin, a former engineering manager at Texas Instruments, published a book titled "The Digital Electronic Watch", in which he cited Biard and Gary Pittman's 1961 discovery as being fundamentally important to the creation of the digital wrist-watch. 27: 831: 443:(GaAs) semi-insulating substrate. Using an infrared image converter microscope recently brought in from Japan, they discovered all of the GaAs varactor diodes and tunnel diodes they had manufactured at the time emitted infrared light. By October 1961, they demonstrated efficient light emission and signal coupling between a GaAs p-n junction light emitter and an electrically isolated semiconductor photodetector. 135: 391:). According to Biard, during TI's annual two-week summer shutdown, "At the time we were new, so we had to work while the others were on vacation. He would often come by and talk to us." Kilby held more than 60 U.S. patents, including two with Biard. Biard later stated, "I had the pleasure of being the co-inventor on two of his 60 patents. It was an honor to have my name with his." 543: 678:

Sept. 1965, Biard and Bob Crawford (from the MOS branch) designed a P-channel MOS circuit using binary coded decimal inputs to turn on the appropriate 15 LED output elements. The MOS circuit worked on the first pass. On March 21, 1966, at a New York IEEE show and convention, TI set up a booth to display the device as the last digit of a simulated cockpit

403: 287:(an army camp north of Paris) during and after WW-II, and did plumbing work for homes and businesses in the Paris area. While in high school, Bob worked for his father and an off duty fireman, who was also a plumber, during the summer as a plumber's assistant. Later in life, Jimmy became chief deputy sheriff in 1857:

In the course of his technical career, Biard has published more than two dozen technical papers and made about the same number of unpublished presentations at major technical conferences. He also developed a one-week seminar on Fiber Optic Data Transmission that he's presented on five occasions. His

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In mid-1965, Biard was placed in charge of TI's Optoelectronic branch and MOS branch, both in SRDL. That year the Opto branch developed a device consisting of a monolithic 3x5 array of red GaP LEDs capable of displaying the numbers 0-9; however, the device was lacking a means of driving the array. In

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monolithic integrated logic circuits using aluminum-silicon Schottky diodes across the collector-base junctions of the transistors and in the input to adjust the logic levels. The diode prevented the transistor from saturating by minimizing the forward bias on the collector-base transistor junction,

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designed for logic circuits, oscillators, amplifiers, memory units, and other applications requiring a high voltage swing and high operating temperature. On March 21, 1960, at the opening of the 1960 IRE International Convention, TI announced availability of the first GaAs diffused junction varactor

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In 1959-60, Biard collaborated with other engineers at Texas Instruments on the design, construction, and patent of one of the first completely automatic transistor testing facilities known as SMART, the Sequential Mechanism for Automatic Recording and Testing. He also developed, and later patented,

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systems. With J. E. Shaunfield and R. S. Speer, he co-invented a passive star coupler for use in fiber optic bundle data buses. During this time, he also designed and set up the Spectronics, Inc. optical standards lab and most of the special test equipment for component calibration and evaluation

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to join Spectronics, Inc., when the company was founded, as Vice President of Research. While at Spectronics, Biard worked on the design of many of their standard products including silicon photodiodes, phototransistors, photodarlington devices, and GaAs light-emitting diodes. In 1973, he designed

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The first diodes that we saw emitting light were not designed to be LEDs. They were varactor diodes and tunnel diodes, which had all of the N-type surface and P-type surface covered with Ohmic contact to achieve a low series resistance. At the time, the varactor diodes had an etched mesa geometry

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On August 8, 1962, Biard and Pittman filed a patent describing a zinc diffused p-n junction LED with spaced cathode contacts to allow for efficient emission of infrared light under forward bias. After four years spent establishing the priority of their work based on engineering notebooks, the U.S.

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where he received a B.S. in Electrical Engineering (June 1954), an M.S. in Electrical Engineering (January 1956), and a Ph.D. in Electrical Engineering (May 1957). Among the scholarships he received were the Dow-Corning Award in 1953-54, and the Westinghouse and Texas Power & Light fellowships

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On June 7, 2014, Biard participated in a Shining Mindz workshop titled "Meet The Inventor Camp (LED)", which allowed children to build circuits that use LED technology for optical communication and measurement. The children could also take pictures with Biard and get his autograph. On October 15,

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In 1986, TI filed a complaint with the International Trade Commission (ITC) charging 19 different firms with violating US tariff laws by importing 256K and 64K dynamic RAM devices, which infringed numerous TI patents including US Patent 3,541,543. In September 1986, per the request of Texas

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Gazula, D., J. K. Guenter, R. H. Johnson, G. D. Landry, A. N. MacInnes, G. Park, J. K. Wade, J. R. Biard, and J. A. Tatum, "Emerging VCSEL technologies at Finisar", Vertical-Cavity Surface-Emitting Lasers XIV, Vol. 7615, p. 761506. International Society for Optics and Photonics; Feb.

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were ideal because they're very small and can be mounted to a circuit board. In addition, they offer protection against excessively high voltages, reduce noise levels, and make measurements more accurate. In March 1964, TI announced commercial chopper devices based on their patent bearing

597:, the inventor of the first handheld digital calculator. The SNX1304 consisted of a GaAs p-n junction light emitter optically coupled to an integrated silicon photodetector feedback-amplifier circuit. The device is thought to be the first commercial optically coupled integrated circuit. 624:

for receiving optical signals generated by LEDs. When the signal current from the silicon photodiode was too large, the input stage of the amplifier would saturate and cause undesirable delays when the optical signal was removed. Biard solved this problem by connecting a silicon HP

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product, the SNX-100. It sold for a price of $ 130 per unit. The SNX-100 employed a pure GaAs crystal to emit a 900 nm light output. It used gold-zinc for the P-type contact and tin alloy for the N-type contact. TI gave Biard and Pittman $ 1.00 each for their patent.

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Peczalski, A., G. Lee, M. Plagens, J. R. Biard, H. Somal, W. Betten, and B. Gilbert, "12 x 12 Multiplier Implementation on 6k Gate Array", Proceedings of the Government Microcircuit Applications Conference (GOMAC), San Diego, CA, Vol. 11, pp. 517; Nov.

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In July 2015, Biard officially retired after working 58 years in the semiconductor industry. In November 2015, the Edison Tech Center shared a paper co-authored by Biard about the development of the LED at Texas Instruments in the 1960s. In March 2016,

633:. Since the Schottky diode had a lower forward drop than the transistor PN junction, the transistor did not saturate and the undesirable delay time was eliminated. The engineer in the next office at the SRD Lab was developing Diode Transistor Logic ( 2157:

H. Chuang, J. R. Biard, J. Guenter, R. Johnson, G. A. Evans, and J. K. Butler, "An Iterative Model for the Steady-State Current Distribution in Oxide-Confined VCSELs", IEEE Journal of Quantum Electronics, Vol. 43, No. 11, pp. 1028–1040; Nov.

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A. Ramaswamy, J. P. van der Ziel, J. R. Biard, R. Johnson, and J. A. Tatum, "Electrical Characteristics of Proton-Implanted Vertical-Cavity Surface-Emitting Lasers", IEEE Journal of Quantum Electronics, Vol. 34, No. 11, pp. 2233–2240; Nov.

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J. K. Guenter, J. A. Tatum, A. Clark, R. S. Penner, J. R. Biard, et al., "Commercialization of Honeywell's VCSEL Technology: Further Developments", Proceedings of SPIE, Vol. 4286, Vertical-Cavity Surface-Emitting Lasers V, pp. 1–14; May

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J. R. Biard and L. B. Kish, “Enhancing the Sensitivity of the SEPTIC Bacterium Detection Method by Concentrating the Phage-infected Bacteria Via DC Electrical Current”, Fluctuation and Noise Letters, Vol. 5, No. 2, pp. L153-L158; June

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H. Chuang, J. R. Biard, J. Guenter, R. Johnson, G. A. Evans, and J. K. Butler, "A Simple Iterative Model for Oxide-Confined VCSELs", 2007 International Conference on Numerical Simulation of Optoelectronic Devices, pp. 53–54; Sept.

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J. A. Tatum, M. K. Hibbs-Brenner, J. R. Biard, et al., "Beyond 850 nm: Progress at Other Wavelengths and Implications from the Standard", Proceedings of SPIE, Vol. 4649, Vertical-Cavity Surface-Emitting Lasers VI, pp. 1–10; June

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B. M. Hawkins, R. A. Hawthorne III, J. K. Guenter, J. A. Tatum, and J. R. Biard, "Reliability of Various Size Oxide Aperture VCSELs", 2002 Proceedings: 52nd IEEE Electronic Components and Technology Conference, pp. 540–550; May

376:. From 1957-59, as part of the Research and Development (R&D) Dept. of the Semiconductor Components (SC) Division, Biard worked with Walt to develop and patent one of the first low-drift DC amplifier circuits using transistors. 2082:

R. M. Kolbas, J. Abrokwah, J. K. Carney, D. H. Bradshaw, B. R. Elmer, and J. R. Biard, "Planar monolithic integration of a photodiode and a GaAs preamplifier", Applied Physics Letters, Volume 43, No. 9, pp. 821–823; Dec.

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J. R. Biard, J. F. Leezer, and G. E. Pittman, "Degradation of Quantum Efficiency in GaAs Light Emitters", GaAs: 1966 Symposium Proceedings, (Reading England), Institute of Physics and Physical Society, pp. 113–117; Sept.

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J. R. Biard, B. R. Elmer, and J. J. Geddes, "LED Driver and Pin Diode Receiver ICs for Digital Fiber Optic Communications", Proceedings of SPIE, Vol. 150, Laser and Fiber Optic Communications, pp. 169–174; Dec.

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P. Bjork, J. Lenz, B. Emo, and J. R. Biard, "Optically Powered Sensors For EMI Immune Aviation Sensing Systems", Proceedings of SPIE, Vol. 1173, Fiber Optic Systems for Mobile Platforms III, pp. 175–186; Sept.

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B. Hawkins and J. R. Biard, "Low-Voltage Silicon Avalanche Photodiodes for Fiber Optic Data Transmission", IEEE Trans. on Components, Hybrids, and Manufacturing Technology; Vol. 7, No. 4, pp. 434–437; Dec.

577:. Using isolation transformers, which were bulky and expensive, in miniaturized circuits to separate the driving source and the switch element resulted in magnetic pick-up and spike feed-through due to the 1906:

J. R. Biard, E. L. Bonin, W. N. Carr, and G. E. Pittman, "GaAs Infrared Source for Optoelectronic Applications", 1963 IEEE International Solid-State Circuits Conference, Volume 6, pp. 108 – 109; Feb.

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C. S. Shin, R. Nevels, F. Strieter, and J. R. Biard, “An Electronically Controlled Transmission Line Phase Shifter”, Microwave and Optical Technology Letters, Vol. 40, No. 5, pp. 402–406; March 2004.

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W. N. Carr and J. R. Biard, "Common Occurrence of Artifacts or 'Ghost' Peaks in Semiconductor Injection Electroluminescence Spectra", Journal of Applied Physics, Vol. 35, No. 9, pp. 2776–2777; Sept.

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J. R. Biard, J. F. Leezer and B. S. Reed, "Characteristics of GaAs Guard-Ring Diodes", IEEE Trans. on Electron Devices, Solid-State Devices Research Conf., Vol. ED-11, No. 11, pp. 537; Nov. 1964.

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US Patent 3235802, James R. Biard, "Programmable apparatus for automatically and sequentially performing a plurality of tests on a transistor", Filed: September 21, 1960, Issued: February 15, 1966.

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J. R. Biard, E. L. Bonin, W. T. Matzen, and J. D. Merryman, "Optoelectronics as Applied to Functional Electronic Blocks", Proceedings of the IEEE, Volume: 52, No: 12, pp. 1529–1536; Dec. 1964.

959:'s College of Engineering published an article titled "ECE professor leads way to Nobel Prize", which focused on Biard's invention of the GaAs infrared LED and discussed his career in the field of 1948:

W. N. Carr and J. R. Biard, "Optical Generation Spectrum for the Electron Thermal-Injection Mechanism in GaAs Diodes", Journal of Applied Physics, Vol. 35, No. 9, pp. 2777–2779; Sept. 1964.

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MICRO SWITCH Division. He then retired in December 1998 only to be hired back on as a consultant. As a consultant, he became part of a team developing Vertical Cavity Surface Emitting Lasers (

693:) referred to as the "Binary Decoder". This was the first time a Read Only Memory had been made using MOS transistors. By the late 1970s, MOS ROM devices had become the most common example of 657:

could be integrated on the same die, it had a compact layout, it had no minority carrier charge storage, and it was faster than a conventional junction diode. Biard's patent was filed before

2328: 1226: 1036: 2697: 861:. Biard started their MICROSWITCH IC & Sensor Design Center and served as a member of the Components Group Sensor Planning Team. He was also the Components Group representative on the 2605: 2071:

J. R. Biard, "Integrated Circuits for Digital Optical Data Transmission", Proceedings of the Government Microcircuit Applications Conference (GOMAC), Monterey, CA, Vol. 7; Nov. 1978.

1184: 648:), a.k.a. the Schottky-clamped transistor, which consisted of a transistor and an internal metal-semiconductor Schottky-barrier diode. The patent was filed based on Schottky Clamped 2100:

R. H. Johnson, B. W. Johnson, and J. R. Biard, "Unified Physical DC and AC MESFET Model for Circuit Simulation and Device Modeling", IEEE Electron Devices Transactions; Sept. 1987.

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J. R. Biard and W. T. Matzen, "Drift Considerations in Low Level Direct-Coupled Transistor Circuits", 1959 I.R.E. National Convention Record (Part 3), pp. 27–33; March 1959.

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J. R. Biard, "Optoelectronic Devices Packaged for Fiber Optics Application", Volume 1, Final Report No. TR-2072, Air Force Contract No. N00163-73-C-05444, ADA025905; April 1976.

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A. Peczalski, G. Lee, J. R. Biard, et al., "A 6 K GaAs gate array with fully functional LSI personalization", Honeywell Syst. & Res. Center, Page(s): 581 - 590; April 1988.

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J. R. Biard, E. L. Bonin, W. N. Carr, and G. E. Pittman, "GaAs Infrared Source", 1962 International Electron Devices Meeting, Washington, D.C., Vol. 8, pp. 96; Oct. 1962.

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W. N. Shaunfield, J. R. Biard, and D. W. Boone, "A Germanium Avalanche Photodetector for 1.06 Microns", International Electron Devices Meeting, Washington, D.C.; Oct. 1967.

395: 745:'s use, unless a cooling apparatus was used conjunctively. On February 15, 1968, Biard filed a patent titled "Low Bulk Leakage Current Avalanche Photodiode" (U.S. Patent 2061:

J. R. Biard and J. E. Shaunfield, "Wideband Fiber Optic Data Links", Final Technical Report AFAL-TR-77-55, Air Force Contract No. F33615-74-C-1160, ADB023925; Oct. 1977.

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U.S. Patent 4,400,054, J. R. Biard, J. E. Shaunfield, and R. S. Speer, Spectronics, Inc., "Passive Optical Coupler", Filed: January 22, 1973, Issued: August 23, 1983.

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Texas Instruments Inc., "First Gallium Arsenide Varactor Diode Announced By Texas Instruments Incorporated at 1960 IRE Show", New Product News Release; March 21, 1960.

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US Patent 3463975, Biard, James R., "Unitary Semiconductor High Speed Switching Device Utilizing a Barrier Diode", Filed: December 31, 1964, Issued: August 26, 1969.

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J. R. Biard, E. L. Bonin, W. N. Carr, and G. E. Pittman, "GaAs Infrared Source", IEEE Transactions on Electron Devices, Vol. 10, No. 2, pp. 109–110; March 1963.

637:) ICs and also having saturation problems. Biard decided to use what he learned with the optical receiver amplifiers and apply that to the bipolar logic circuits. 2635: 987:

area at banquets, schools, churches, hospitals, retirement homes, and performance halls. His renditions of classic songs were done with several harmonicas and a

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J. R. Biard, "Optoelectronic Aspects of Avionic Systems II", Final Technical Report AFAL-TR-75-45, Air Force Contract No. F33615-73-C-1272, ADB008070; May 1975.

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J. R. Biard, "Optoelectronic Aspects of Avionic Systems", Final Technical Report AFAL-TR-73-164, Air Force Contract No. F33615-72-C-1565, AD0910760; April 1973.

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J. R. Biard and W. N. Shaunfield, "A High Frequency Silicon Avalanche Photodiode", 1966 International Electron Devices Meeting, Vol. 12, pp. 30; Oct. 1966.

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J. R. Biard, W. N. Carr, and B. S. Reed, "Analysis of a GaAs Laser", Transactions of the Metallurgical Society of AIME, Vol. 230, pp. 286–290; March 1964.

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Jimmy eventually became manager of the local 7-Up company and ended up buying it from the former owner. He also sold used cars, worked as a master plumber at

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Texas Instruments Inc., "Commercial Availability of Gallium Arsenide Tunnel Diodes Announced By Texas Instruments", New Product News Release; March 21, 1960.

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J. R. Biard and K. L. Ashley, "Optical Microprobe Response of GaAs Diodes", IEEE Trans. on Electron Devices, Vol. ED-14, No. 8, pp. 429–432; Aug. 1967.

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http://worldwide.espacenet.com/publicationDetails/originalDocument?CC=GB&NR=1017095A&KC=A&FT=D&date=19660112&DB=EPODOC&locale=en_EP

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J. R. Biard and J. E. Shaunfield, "A MIL-STD-1553 Fiber Optic Data Bus", Proc. AFSC Multiplex Data Bus Conference, Dayton, OH, pp. 177–235; Nov. 1976.

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In 1959, Biard and Gary Pittman were assigned to work together in the Semiconductor Research and Development Laboratory (SRDL) on a project to create GaAs

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US Patent 3304431, Biard, James R., "Photosensitive Transistor Chopper Using Light Emissive Diode", Filed: November 29, 1963, Issued: February 14, 1967.

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US Patent 3304431, Biard, James R., "Photosensitive Transistor Chopper Using Light Emissive Diode", Filed: November 29, 1963, Issued: February 14, 1967.

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J. R. Biard, "Degradation of Quantum Efficiency in GaAs Light Emitters", Solid-State Device Research Conference, Princeton, New Jersey; June 21–23, 1965.

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J. R. Biard and S. B. Watelski, "Evaluation of Germanium Epitaxial Films", Journal of the Electrochemical Society, Vol. 109, pp. 705–709; Aug. 1962.

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J. R. Biard and W. N. Shaunfield, "A Model of the Avalanche Photodiode", IEEE Trans. on Electron Devices, Vol. ED-14, No. 5, pp. 233–238; May 1967.

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J. R. Biard, "Optoelectronic Functional Electronic Blocks", Interim Engineering Report No. 04-64-20, Texas Instruments Inc., Dallas, TX; March 27, 1964.

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J. R. Biard and W. N. Carr, "Temperature Effects and Moding in GaAs Injection Lasers", Device Research Conference, Michigan State University; June 1963.

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J. R. Biard, "Short distance fiber optics data transmission", IEEE International Symposium on Circuits and Systems Proceedings, pp. 167–171; 1977.

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P. D. Davis and G. D. Ezell, "Subaudio parametric amplifier for ocean-bottom seismometer", Electronics magazine, Vol. 36, pp. 28-31; March 1, 1963.

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W. T. Matzen and J. R. Biard, "Differential Amplifier Features D-C Stability", Electronics magazine, Vol. 32, No. 3, pp. 60-62; January 16, 1959.

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J. R. Biard and J. E. Shaunfield, "Optical Couplers", Interim Technical Report AFAL-TR-74-314, Air Force Contract No. F33615-74-C-1001; May 1975.

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Instruments, Biard testified before the ITC in Washington D.C.; however, the judge determined that the firms did not violate TI's patent rights.

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J. R. Biard and L. L. Stewart, "Optoelectronic Data Transmission", IEEE Electromagnetic Compatibility Symposium Rec., pp. 1–11; July 1974.

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A Texas Instruments PEX3002 Optoelectronic Multiplex Switch consisting of two silicon phototransistors illuminated by a single, GaAs dome LED.

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J. R. Biard, "Low-Frequency Reactance Amplifier", 1960 IEEE International Solid-State Circuits Conference, Vol. 3, pp. 88–89; Feb. 1960.

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Texas Instruments engineers in Dallas, TX (early 1960s). From left to right: Standing - Charles Phipps, Joe Weaver; Seated - James R. Biard,

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J. R. Biard and L. L. Stewart, "Optoelectronic Data Bus", IEEE Electromagnetic Compatibility Symposium Rec., IEEE 74CH0803-7 EMC; Oct. 1973.

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of the switch element in a chopper from the driving source for opening and closing the switch element was not possible, even through use of

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US Patent 3046487, James R. Biard and Walter T. Matzen, "Differential Transistor Amplifier", Filed: March 21, 1958, Issued: July 24, 1962.

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E. L. Bonin and J. R. Biard, "Tunnel Diode Series Resistance Measurement", Solid-State Design, Vol. 3, No. 7, pp. 36–42; July 1962.

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D. T. Wingo, J. R. Biard, and H. Fledel, "Gallium Arsenide Terrain Illuminator", IRIS Proc., Vol. 11, No. 1, pp. 91–96; Oct. 1966.

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US Patent 3293513, Biard, James R. and Gary Pittman, "Semiconductor Radiant Diode", Filed: August 8, 1962, Issued: December 20, 1966.

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and patented a cylindrical edge-emitting LED for efficient coupling to fiber optic bundles. In 1974, he worked on the development of

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Method for the indirect measurement of resistivities and impurity concentrations in a semiconductor body including an epitaxial film

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US Patent 3,821,775, Biard, James R., "Edge Emission GaAs Light Emitter Structure", Filed: August 13, 1973, Issued: June 28, 1974.

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E. L. Bonin and J. R. Biard, "Tunnel Diode Series Resistance", Proceedings of the IRE, Vol. 49, No. 11, pp. 1679; Nov. 1961.

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US Patent 3541543, Biard, James R. and R. H. Crawford, "MOS Binary Decoder", Filed: July 25, 1966, Issued: November 17, 1970.

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Corporation, which hired Biard on half time as a consultant Senior Scientist for the Advanced Optical Components Division in

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B. R. Eimer, J. J. Geddes, and J. R. Biard, "LED driver and PIN diode receiver ICs for digital fiber optic communications."

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On June 3, 1957, Biard was hired, along with his former Texas A&M professor Walter T. "Walt" Matzen, as an engineer for

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Texas Instruments Inc., "First GaAs Infrared Light Source Announced By Texas Instruments", News Release; October 26, 1962.

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Utilizing a depletion mode FET operating in the triode region and a depletion mode FET operating in the saturation region

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filed a patent titled "Photosensitive Transistor Chopper Using Light Emissive Diode". Within the patent they described a

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J. R. Biard, "Low-Frequency Reactance Amplifier", Proceedings of the IEEE, Vol. 51, No. 2, pp. 298–303; Feb. 1963.

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second junction. The first two layers constituted the photosensitive junction and the third layer constituted a highly

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In March 1965, TI announced the SNX1304 Optoelectronic Pulse Amplifier, which was conceived and developed by Biard and

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Hall effect device formed in an epitaxial layer of silicon for sensing magnetic fields parallel to the epitaxial layer

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Low frequency reactance amplifier including both up-conversion and negative resistance amplification with gain control

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GB Patent 1017095, James R. Biard, "Electrical Reactance Amplifiers", Filed: May 22, 1962, Issued: January 12, 1966.

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for contributions to semiconductor light-emitting diodes and lasers, Schotky-clamped logic, and read-only memories.

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Walter T. Matzen (top) and James R. Biard (bottom) demonstrate a low-drift DC differential amplifier at TI in 1958.

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Biard's presentation "The Invention Of The LED" delivered at the University of Texas at Dallas (UTD) in 2002

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J. R. Biard, "GaAs P-N Junction Lasers", Solid-State Electronics Seminar, Stanford University; May 7, 1963.

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Technology Board (HTB), which was concerned with the development and transfer of technology throughout the

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parametric amplifiers to be used in radar receivers. This project also facilitated the development of GaAs

59: 1824:

Device and method for identifying microbes and counting microbes and determining antimicrobial sensitivity

1071:

Programmable apparatus for automatically and sequentially performing a plurality of tests on a transistor

610: 1927:

J. R. Biard and W. N. Carr, "Characteristics of Injection Lasers", Boston AIME Meeting; August 26, 1963.

2722: 819: 2717: 250: 2545: 2500: 1758:

Light emitting semiconductor device having an electrical confinement barrier near the active region

1472:

Methods for identifying and removing an oxide-induced dead zone in a semiconductor device structure

617: 2193: 956: 834:

Bob playing the harmonica at the 2002 Texas A&M Electrical Engineering Dept. Christmas party.

304: 261: 193: 37: 2169:

T. M. Okon and J. R. Biard, "The First Practical LED", The Edison Tech Center; November 9, 2015.

411:

a low-frequency reactance amplifier with undetectable "flicker" noise for seismic applications.

264:

as an adjunct professor of electrical engineering. In 1991, he was elected as a member into the

774: 369: 222: 237:(May 20, 1931 – September 23, 2022) was an American electrical engineer and inventor who held 874: 845:(inventor of the first digital, handheld calculator) and Biard at the meeting of the TI Vets. 722: 574: 558: 2220:

In September 2013, he received the "Distinguished Graduate Award" from Paris High School in

796:

Biard serving as Vice President of the Spectronics Research and Development Division (1976).

84: 2667: 2662: 2472:, Vol. 150, pp. 169-174, International Society for Optics and Photonics; December 21, 1978. 1725:

Vertical cavity surface emitting laser with photodiode having reduced spontaneous emissions

750: 570: 476: 300: 242: 205: 939:, Biard was issued a total of 28 engineering patents related to the design of 850 nm 542: 8: 2186: 1780:

Providing current control over wafer borne semiconductor devices using overlayer patterns

641: 522: 308: 288: 353: 299:

Biard attended Paris High School from 1944-48. After receiving an associate degree from

2189:

Innovation Award for his contribution to the design and development of Schottky Logic.

718: 694: 566: 388: 2431: 1659:

Absorbing layers for reduced spontaneous emission effects in an integrated photodiode

801: 488: 398:

A 1962 Texas Instruments SNX-100 GaAs LED contained in a TO-18 transistor metal case.

380: 329: 1637:

Vertical cavity surface emitting laser including trench and proton implant isolation

1113:

High frequency electro-optical device using photosensitive and photo emissive diodes

1210:

Combination P-N junction light emitter and photocell having electrostatic shielding

893: 586: 506:

In October 1963, TI announced the first commercial hemispherical LED, the SNX-110.

492: 440: 253: 1417:

Turbidity sensor with the capability of regulating the intensity of a light source

1188:

Electrical chopper comprising photo-sensitive transistors and light emissive diode

780:

back region present at a distance from the photosensitive junction smaller than a

689:

On July 25, 1966, Biard and Crawford filed a patent for their device (U.S. Patent

2632:"PHS inducts Biard, Neely, Robinson into 'Distinguished Graduates' wall of honor" 2507: 2458:

https://patentimages.storage.googleapis.com/6e/a6/64/3124807c4d8019/US4400054.pdf

2445:

https://patentimages.storage.googleapis.com/dc/6d/a9/3120ed487b10c8/US3821775.pdf

1968:

J. R. Biard and E. L. Bonin, "What's new in semiconductor emitters and sensors",

1549:

Implant damaged oxide insulating region in vertical cavity surface emitting laser

960: 810: 806: 754: 738: 730: 726: 555: 484: 181: 1648:

Optimizing mirror reflectivity for reducing spontaneous emissions in photodiodes

907:). He was also involved in the interface between the MICRO SWITCH division, the 669: 471:. As a result, the two inventors were issued U.S. patent 3,293,513 for the GaAs 2391: 2369: 2315: 2302: 2280: 2267: 2254: 1862:

W. T. Matzen and J. R. Biard, "Differential Amplifier Features D-C Stability",

1791:

Providing current control over wafer borne semiconductor devices using trenches

878: 870: 858: 842: 766: 746: 702: 690: 654: 645: 626: 594: 436: 420: 2577: 2487: 2241: 1841: 1830: 1819: 1808: 1797: 1786: 1775: 1764: 1753: 1742: 1731: 1720: 1709: 1698: 1687: 1676: 1665: 1654: 1643: 1632: 1621: 1610: 1599: 1588: 1577: 1566: 1555: 1544: 1533: 1522: 1511: 1500: 1489: 1478: 1467: 1456: 1445: 1439:

Fabrication of vertical cavity surface emitting laser with current confinement

1434: 1423: 1412: 1401: 1390: 1379: 1368: 1357: 1346: 1335: 1324: 1313: 1302: 1291: 1280: 1269: 1258: 1247: 1236: 1216: 1205: 1194: 1174: 1163: 1152: 1141: 1130: 1119: 1108: 1097: 1077: 1066: 1046: 1026: 1015: 1004: 2656: 2210: 777: 762: 758: 362: 321: 260:, and fiber-optic data links. In 1980, Biard became a member of the staff of 246: 792: 2475:

http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1227541

1252:

Unitary semiconductor high speed switching device utilizing a barrier diode

869:

corporate structure. Biard's product development responsibilities included

838: 770: 697:

used to provide the storage of fixed programs in digital equipment such as

605: 464: 313: 277: 162: 1714:

Geometric optimizations for reducing spontaneous emissions in photodiodes

988: 948: 944: 889: 882: 698: 653:

thus reducing the minority carrier injection to a negligible amount. The

621: 582: 578: 340: 317: 2606:"Dr. James R. Biard receives degree of Doctor of Science, honoris causa" 2522:. Texas A&M College of Engineering. October 15, 2014. Archived from 2419:

http://www.computerhistory.org/semiconductor/timeline/1969-Schottky.html

1813:

Vertical cavity surface emitting laser having multiple top-side contacts

1736:

Vertical cavity surface emitting laser having multiple top-side contacts

1560:

Mirrors for reducing the effects of spontaneous emissions in photodiodes

2182:

cited for "outstanding contributions in the field of optoelectronics".

742: 683: 630: 551: 384: 373: 358: 284: 976:

magazine interviewed Biard regarding his many career accomplishments.

2221: 980: 932: 920: 908: 900: 866: 862: 854: 850: 781: 734: 679: 460: 439:

emission from a forward biased tunnel diode they had constructed on

406:

A 1963 Texas Instruments SNX-110 IR LED with dome-shaped GaAs diode.

26: 2416:

Schottky-Barrier Diode Doubles the Speed of TTL Memory & Logic

1670:

Optical apertures for reducing spontaneous emissions in photodiodes

814: 528:

In August 2013, during a recollection of the patent, Biard stated:

472: 325: 1703:

Integrated light emitting device and photodiode with Ohmic contact

1615:

Integrated light emitting device and photodiode with Ohmic contact

1461:

Gain guide implant in oxide vertical cavity surface emitting laser

1091:

Arrangements for measuring electrical properties of semiconductors

830: 241:. Some of his more significant patents include the first infrared 1681:

Providing photonic control over wafer borne semiconductor devices

936: 928: 886: 2501:

http://www.shiningmindz.com/MEET%20THE%20INVENTOR%20CAMP-LED.pdf

2046:

magazine, Laser Institute of America, pp. 16–17; Jan. 1976.

1428:

Current confinement for a vertical cavity surface emitting laser

550:

On November 29, 1963, Biard, Gary Pittman, Edward L. Bonin, and

2012:

magazine, Vol. 40, No. 23, pp. 127–129; November 13, 1967.

1692:

Methods of conducting wafer level burn-in of electronic devices

984: 424: 2608:. SMU Lyle School of Engineering. May 17, 2013. Archived from 1835:

Vertical cavity surface emitting laser with undoped top mirror

1802:

Vertical cavity surface emitting laser with undoped top mirror

1747:

Vertical cavity surface emitting laser with undoped top mirror

1527:

VCSEL mode-transforming phase filter with enhanced performance

513:

Card Verifier was the first commercial device to use infrared

447:

patent office determined their work predated submissions from

2485:

Jack Kilby's speech at Bob Biard's retirement party - 2/5/99

2209:

In May 2013, he was awarded the degree of Doctor of Science,

1031:

Frequency modulated multi-vibrator with a constant duty cycle

940: 924: 904: 2698:

Members of the United States National Academy of Engineering

1124:

Photosensitive transistor chopper using light emissive diode

853:. From 1978 to 1987, Biard worked as Chief Scientist of the 134: 2498:"Meet The Inventor Camp (LED)" hosted by the Satkriti club 2179: 1866:

magazine, Vol. 32, No. 3, pp. 60–62; January 16, 1959.

757:

without having to be cooled. The design consisted of three

448: 432:

diode, the XD500, and the 1N650 series GaAs tunnel diodes.

312:

throughout his graduate work. He was also a member of IRE,

2555: 2396: 2538: 2192:

In 1986, he was recognized as a Distinguished Alumnus of

649: 634: 562: 518: 514: 510: 499: 480: 468: 456: 452: 402: 394: 2598: 2512: 2008:

J. R. Biard and H. Strack, "GaAs Light Era On The Way",

1168:

Laser system with pumping by semiconductor radiant diode

565:

optically coupled with a dual emitter, photosensitive,

498:

On October 26, 1962, TI announced the first commercial

1972:

magazine, Vol. 38, No. 23, pp. 98–104; Nov. 1965.

2634:. eParisExtra.com. September 23, 2013. Archived from 2563:"Q&A: James R. Biard, GaAs Infrared LED Inventor" 1604:

Distributed bragg reflector for optoelectronic device

1571:

Systems for wafer level burn-in of electronic devices

1483:

Distributed Bragg reflector for optoelectronic device

16:

American electrical engineer and inventor (1931–2022)

2404:"Jerry, Bob, and the Optoelectronic Pulse Amplifier" 994:

Biard died on September 23, 2022, at the age of 91.

640:On December 31, 1964, Biard filed a patent for the 414: 51:. Unsourced material may be challenged and removed. 2432:http://smithsonianchips.si.edu/patents/3534231.htm 729:, which was amplified by the avalanche gain. The 600: 2624: 1494:Metamorphic long wavelength high-speed photodiode 1450:Metamorphic long wavelength high-speed photodiode 2654: 911:Corporate R&D Laboratory, and universities. 885:components, transmitter & receiver modules, 717:In the 1960s, during the ongoing development of 629:across the collector-base junction of the input 435:In September 1961, Biard and Pittman discovered 2199:In 1989, he received the Honeywell Lund Award. 2178:In 1969, Biard was elected as a Life Fellow of 1051:Stabilized duty cycle modulated multi-vibrator 491:(CdTe), while Biard and Pittman's patent used 2575:Bob Biard's Harmonica Program - May 31, 1995 2202:In 1991, he was elected to membership in the 1285:Low bulk leakage current avalanche photodiode 899:In 1987, Biard became Chief Scientist of the 2392:http://www.freepatentsonline.com/3304431.pdf 2370:http://www.freepatentsonline.com/3293513.pdf 2316:http://www.freepatentsonline.com/3235802.pdf 2303:http://www.freepatentsonline.com/3046487.pdf 2281:http://www.freepatentsonline.com/3541543.pdf 2268:http://www.freepatentsonline.com/3463975.pdf 2255:http://www.freepatentsonline.com/3304431.pdf 1593:Sensing phage-triggered ion cascade (septic) 784:length of the thermally generated carriers. 2578:https://www.youtube.com/watch?v=cHEqQn9kueM 2488:https://www.youtube.com/watch?v=0ZUwExnDM1U 2242:https://www.youtube.com/watch?v=lEIe7tkjVqQ 1199:Electro-optical transistor switching device 483:at the time used II-VI semiconductors like 249:, Schottky clamped logic circuits, silicon 2042:J. R. Biard, "Status of Optoelectronics", 1318:Edge emission GaAs light emitter structure 257: 133: 761:layers, located one on the other, with a 725:were afflicted by a relatively high bulk 111:Learn how and when to remove this message 2551:. Edison Tech Center. November 10, 2016. 2520:"ECE professor leads way to Nobel Prize" 837: 829: 791: 737:thermally generated in the device. This 712: 668: 604: 541: 521:replaced tungsten bulbs that controlled 479:. Most other organized research seeking 401: 393: 352: 339: 1516:Long wavelength VCSEL device processing 1505:Hall element with segmented field plate 966: 537: 2655: 1241:Semiconductor optical radiation device 1221:High frequency strip transmission line 256:(MOS ROM), a low bulk leakage current 2470:Laser and Fiber Optics Communications 2406:. Electronic Design. October 4, 2019. 1846:Gallium arsenide avalanche photodiode 849:In 1978, Spectronics was acquired by 2565:. Electronic Design. March 17, 2016. 2173: 1329:Phototransistor having a buried base 749:), which presented the design of an 348: 139:US Inventor of the GaAs Infrared LED 49:adding citations to reliable sources 20: 2595:, 2 Oct 2022. Retrieved 2022-10-10. 1769:VCSEL optimized for high speed data 1538:Electron affinity engineered VCSELs 1362:Apparatus for input amplifier stage 1060:P-N junctions as quiet terminations 1009:Duty cycle modulated multi-vibrator 590:designations PEX3002 and PEX3003. 276:Bob grew up and attended school in 13: 238: 14: 2734: 1020:Differential transistor amplifier 997: 415:The GaAs IR Light-Emitting Diode 25: 2713:Texas A&M University alumni 2678:21st-century American inventors 2673:20th-century American inventors 2582: 2569: 2492: 2479: 2462: 2449: 2436: 2423: 2410: 2383: 2374: 2361: 2352: 2343: 2204:National Academy of Engineering 1852: 1135:Isolated differential amplifier 616:In 1964, Biard designed linear 601:Schottky-clamped Logic Circuits 266:National Academy of Engineering 36:needs additional citations for 2334: 2320: 2307: 2294: 2285: 2272: 2259: 2246: 2233: 2044:Electro-Optical Systems Design 1040:Electrical reactance amplifier 787: 664: 1: 2693:American electrical engineers 2683:Light-emitting diode pioneers 2227: 2215:Southern Methodist University 1395:Delay line fiber optic sensor 1274:Low noise reactance amplifier 1157:Electro-optical switch device 673:MOS Binary-to-Decimal Decoder 324:, and an associate member of 271: 204:Inventing the first infrared 1727:, Issued: September 21, 2010 1626:Lens with reflective surface 1474:, Issued: September 27, 2005 1397:, Issued: September 15, 1992 1331:, Issued: September 24, 1974 1296:Opto thermal audio amplifier 1170:, Issued: September 12, 1967 983:player. He performed in the 857:Optoelectronics Division in 825: 294: 196:; BS 1954, MS 1956, PhD 1957 7: 2708:Paris Junior College alumni 1837:, Issued: September 1, 2015 1749:, Issued: December 28, 2010 1683:, Issued: February 16, 2010 1582:Vertical hall effect device 1562:, Issued: February 27, 2007 1419:, Issued: December 31, 1996 1309:, Issued: November 17, 1970 1265:, Issued: February 10, 1970 1201:, Issued: November 26, 1968 1181:, Issued: December 19, 1967 1126:, Issued: February 14, 1967 1115:, Issued: February 14, 1967 1104:, Issued: December 20, 1966 1102:Semiconductor radiant diode 1073:, Issued: February 15, 1966 1062:, Issued: November 29, 1965 1042:, Issued: December 31, 1962 659:Transistor–transistor logic 620:(TIA) to work with silicon 611:Schottky-clamped transistor 303:in 1951, he transferred to 10: 2739: 2506:February 21, 2015, at the 2185:In 1985, he received TI's 1826:, Issued: January 28, 2014 1782:, Issued: October 18, 2011 1738:, Issued: November 2, 2010 1628:, Issued: January 29, 2008 1485:, Issued: January 24, 2006 1463:, Issued: November 9, 2004 1408:, Issued: November 5, 1996 1353:, Issued: February 1, 1983 1342:, Issued: January 22, 1982 1298:, Issued: October 13, 1970 1287:, Issued: October 13, 1970 1053:, Issued: January 29, 1963 1033:, Issued: October 30, 1962 914: 820:fiber optic communications 769:junction in the form of a 2546:"The First Practical LED" 1771:, Issued: October 4, 2011 1672:, Issued: August 26, 2008 1617:, Issued: October 2, 2007 1551:, Issued: August 22, 2006 1375:, Issued: October 1, 1985 1254:, Issued: August 26, 1969 1082:Voltage variable resistor 618:transimpedance amplifiers 335: 251:Metal Oxide Semiconductor 228: 218: 211: 200: 189: 170: 144: 132: 125: 2703:People from Paris, Texas 2688:Texas Instruments people 2194:Texas A&M University 1848:, Issued: April 19, 2016 1694:, Issued: April 20, 2010 1650:, Issued: April 29, 2008 1639:, Issued: March 19, 2008 1584:, Issued: April 17, 2007 1573:, Issued: March 13, 2007 1518:, Issued: April 18, 2006 1507:, Issued: March 21, 2006 1441:, Issued: April 13, 1999 1386:, Issued: April 28, 1987 1190:, Issued: March 28, 1968 1148:, Issued: April 25, 1967 1137:, Issued: April 18, 1967 1093:, Issued: April 21, 1966 1084:, Issued: March 22, 1966 957:Texas A&M University 800:In May 1969, Biard left 733:resulted from holes and 305:Texas A&M University 262:Texas A&M University 194:Texas A&M University 2593:The Dallas Morning News 1793:, Issued: March 6, 2012 1760:, Issued: April 5, 2011 1716:, Issued: June 29, 2010 1661:, Issued: July 22, 2008 1606:, Issued: July 31, 2007 1595:, Issued: June 12, 2007 1540:, Issued: June 20, 2006 1529:, Issued: June 13, 2006 1496:, Issued: March 7, 2006 1364:, Issued: July 16, 1985 1340:Passive optical coupler 1320:, Issued: June 28, 1974 1243:, Issued: July 15, 1969 1232:, Issued: June 11, 1969 1212:, Issued: April 1, 1969 1022:, Issued: July 24, 1962 979:Biard was also an avid 813:developed for airborne 379:In the summer of 1958, 258:avalanche photodetector 1815:, Issued: June 5, 2012 1430:, Issued: June 9, 1998 1373:Data transmission link 1351:Data transmission link 1223:, Issued: May 20, 1969 1179:High voltage regulator 1159:, Issued: May 23, 1967 1011:, Issued: May 29, 1962 846: 835: 797: 721:related technologies, 674: 613: 575:isolation transformers 547: 535: 407: 399: 370:Texas Instruments Inc. 365: 345: 223:Electrical engineering 2331:G.B. Patent 1,017,095 1842:U.S. patent 9,318,639 1831:U.S. patent 9,124,069 1820:U.S. patent 8,637,233 1809:U.S. patent 8,193,019 1804:, Issued: May 1, 2012 1798:U.S. patent 8,168,456 1787:U.S. patent 8,129,253 1776:U.S. patent 8,039,277 1765:U.S. patent 8,031,752 1754:U.S. patent 7,920,612 1743:U.S. patent 7,860,137 1732:U.S. patent 7,826,506 1721:U.S. patent 7,801,199 1710:U.S. patent 7,746,911 1705:, Issued: May 4, 2010 1699:U.S. patent 7,709,358 1688:U.S. patent 7,700,379 1677:U.S. patent 7,662,650 1666:U.S. patent 7,418,021 1655:U.S. patent 7,403,553 1644:U.S. patent 7,366,217 1633:U.S. patent 7,346,090 1622:U.S. patent 7,324,575 1611:U.S. patent 7,277,463 1600:U.S. patent 7,251,264 1589:U.S. patent 7,229,754 1578:U.S. patent 7,205,622 1567:U.S. patent 7,190,184 1556:U.S. patent 7,184,455 1545:U.S. patent 7,095,771 1534:U.S. patent 7,065,124 1523:U.S. patent 7,061,945 1512:U.S. patent 7,031,363 1501:U.S. patent 7,015,557 1490:U.S. patent 7,009,224 1479:U.S. patent 6,990,135 1468:U.S. patent 6,949,473 1457:U.S. patent 6,816,526 1452:, Issued: May 6, 2003 1446:U.S. patent 6,558,973 1435:U.S. patent 5,893,722 1424:U.S. patent 5,764,674 1413:U.S. patent 5,589,935 1402:U.S. patent 5,572,058 1391:U.S. patent 5,148,303 1380:U.S. patent 4,661,726 1369:U.S. patent 4,545,076 1358:U.S. patent 4,529,947 1347:U.S. patent 4,371,847 1336:U.S. patent 4,400,054 1325:U.S. patent 3,838,439 1314:U.S. patent 3,821,775 1303:U.S. patent 3,541,543 1292:U.S. patent 3,534,280 1281:U.S. patent 3,534,231 1276:, Issued: May 5, 1970 1270:U.S. patent 3,510,674 1259:U.S. patent 3,495,170 1248:U.S. patent 3,463,975 1237:U.S. patent 3,456,167 1230:Semiconductor devices 1227:G.B. Patent 1,154,892 1217:U.S. patent 3,445,793 1206:U.S. patent 3,436,548 1195:U.S. patent 3,413,480 1175:U.S. patent 3,359,483 1164:U.S. patent 3,341,787 1153:U.S. patent 3,321,631 1142:U.S. patent 3,316,421 1131:U.S. patent 3,315,176 1120:U.S. patent 3,304,431 1109:U.S. patent 3,304,430 1098:U.S. patent 3,293,513 1078:U.S. patent 3,242,394 1067:U.S. patent 3,235,802 1047:U.S. patent 3,076,152 1037:G.B. Patent 1,017,095 1027:U.S. patent 3,061,799 1016:U.S. patent 3,046,487 1005:U.S. patent 3,037,172 875:light emitting diodes 841: 833: 795: 723:avalanche photodiodes 713:Avalanche Photodiodes 672: 608: 545: 530: 405: 397: 387:(the inventor of the 356: 343: 2589:James Biard obituary 967:Retirement and death 947:used for high-speed 935:. While working for 751:avalanche photodiode 571:electrical isolation 538:The Optical Isolator 523:punched card readers 477:light-emitting diode 301:Paris Junior College 243:light-emitting diode 45:improve this article 2187:Patrick E. Haggerty 1185:DE Patent 1,264,513 1088:DE Patent 1,214,792 1057:FR Patent 1,423,624 951:data transmission. 753:to reduce the bulk 642:Schottky transistor 309:College Station, TX 289:Lamar County, Texas 847: 836: 798: 719:integrated circuit 695:nonvolatile memory 675: 614: 567:silicon transistor 548: 408: 400: 389:integrated circuit 366: 346: 235:James Robert Biard 174:September 23, 2022 149:James Robert Biard 2723:Laser researchers 2612:on April 16, 2015 2526:on April 14, 2015 2174:Awards and honors 974:Electronic Design 802:Texas Instruments 587:Optical isolators 561:consisting of an 489:cadmium telluride 381:Texas Instruments 349:Texas Instruments 330:Richardson, Texas 232: 231: 213:Scientific career 121: 120: 113: 95: 2730: 2718:Honeywell people 2648: 2647: 2645: 2643: 2628: 2622: 2621: 2619: 2617: 2602: 2596: 2586: 2580: 2573: 2567: 2566: 2559: 2553: 2552: 2550: 2542: 2536: 2535: 2533: 2531: 2516: 2510: 2496: 2490: 2483: 2477: 2466: 2460: 2453: 2447: 2440: 2434: 2427: 2421: 2414: 2408: 2407: 2400: 2394: 2387: 2381: 2378: 2372: 2365: 2359: 2356: 2350: 2347: 2341: 2338: 2332: 2324: 2318: 2311: 2305: 2298: 2292: 2289: 2283: 2276: 2270: 2263: 2257: 2250: 2244: 2237: 1858:papers include: 1844: 1833: 1822: 1811: 1800: 1789: 1778: 1767: 1756: 1745: 1734: 1723: 1712: 1701: 1690: 1679: 1668: 1657: 1646: 1635: 1624: 1613: 1602: 1591: 1580: 1569: 1558: 1547: 1536: 1525: 1514: 1503: 1492: 1481: 1470: 1459: 1448: 1437: 1426: 1415: 1404: 1393: 1382: 1371: 1360: 1349: 1338: 1327: 1316: 1305: 1294: 1283: 1272: 1261: 1250: 1239: 1219: 1208: 1197: 1177: 1166: 1155: 1144: 1133: 1122: 1111: 1100: 1080: 1069: 1049: 1029: 1018: 1007: 894:pressure sensors 807:optical couplers 755:leakage currents 493:gallium arsenide 441:gallium arsenide 254:Read Only Memory 247:optical isolator 177: 158: 156: 137: 123: 122: 116: 109: 105: 102: 96: 94: 60:"James R. Biard" 53: 29: 21: 2738: 2737: 2733: 2732: 2731: 2729: 2728: 2727: 2653: 2652: 2651: 2641: 2639: 2638:on May 21, 2015 2630: 2629: 2625: 2615: 2613: 2604: 2603: 2599: 2587: 2583: 2576: 2574: 2570: 2561: 2560: 2556: 2548: 2544: 2543: 2539: 2529: 2527: 2518: 2517: 2513: 2508:Wayback Machine 2499: 2497: 2493: 2486: 2484: 2480: 2473: 2467: 2463: 2456: 2454: 2450: 2443: 2441: 2437: 2430: 2428: 2424: 2417: 2415: 2411: 2402: 2401: 2397: 2390: 2388: 2384: 2379: 2375: 2368: 2366: 2362: 2357: 2353: 2348: 2344: 2339: 2335: 2327: 2325: 2321: 2314: 2312: 2308: 2301: 2299: 2295: 2290: 2286: 2279: 2277: 2273: 2266: 2264: 2260: 2253: 2251: 2247: 2240: 2238: 2234: 2230: 2176: 1855: 1840: 1829: 1818: 1807: 1796: 1785: 1774: 1763: 1752: 1741: 1730: 1719: 1708: 1697: 1686: 1675: 1664: 1653: 1642: 1631: 1620: 1609: 1598: 1587: 1576: 1565: 1554: 1543: 1532: 1521: 1510: 1499: 1488: 1477: 1466: 1455: 1444: 1433: 1422: 1411: 1400: 1389: 1378: 1367: 1356: 1345: 1334: 1323: 1312: 1301: 1290: 1279: 1268: 1257: 1246: 1235: 1215: 1204: 1193: 1173: 1162: 1151: 1140: 1129: 1118: 1107: 1096: 1076: 1065: 1045: 1025: 1014: 1003: 1000: 969: 961:optoelectronics 917: 828: 790: 741:restricted the 739:leakage current 731:leakage current 727:leakage current 715: 667: 609:Diagram of the 603: 556:phototransistor 540: 485:cadmium sulfide 459:Research Labs, 455:Research Labs, 421:varactor diodes 417: 351: 338: 297: 274: 239:73 U.S. patents 190:Alma mater 185: 182:McKinney, Texas 179: 175: 166: 160: 154: 152: 151: 150: 140: 128: 117: 106: 100: 97: 54: 52: 42: 30: 17: 12: 11: 5: 2736: 2726: 2725: 2720: 2715: 2710: 2705: 2700: 2695: 2690: 2685: 2680: 2675: 2670: 2665: 2650: 2649: 2623: 2597: 2581: 2568: 2554: 2537: 2511: 2491: 2478: 2461: 2448: 2435: 2422: 2409: 2395: 2382: 2373: 2360: 2351: 2342: 2333: 2319: 2306: 2293: 2284: 2271: 2258: 2245: 2231: 2229: 2226: 2175: 2172: 2171: 2170: 2167: 2165: 2161: 2159: 2155: 2153: 2149: 2147: 2143: 2141: 2138: 2136: 2132: 2130: 2126: 2124: 2120: 2118: 2114: 2112: 2108: 2106: 2103: 2101: 2098: 2096: 2092: 2090: 2086: 2084: 2080: 2078: 2074: 2072: 2069: 2067: 2064: 2062: 2059: 2057: 2054: 2052: 2049: 2047: 2040: 2038: 2035: 2033: 2030: 2028: 2025: 2023: 2020: 2018: 2015: 2013: 2006: 2004: 2001: 1999: 1996: 1994: 1991: 1989: 1986: 1984: 1981: 1979: 1975: 1973: 1966: 1964: 1961: 1959: 1956: 1954: 1951: 1949: 1946: 1944: 1940: 1938: 1935: 1933: 1930: 1928: 1925: 1923: 1920: 1918: 1915: 1913: 1910: 1908: 1904: 1902: 1899: 1897: 1894: 1892: 1889: 1887: 1884: 1882: 1879: 1877: 1874: 1872: 1869: 1867: 1854: 1851: 1850: 1849: 1838: 1827: 1816: 1805: 1794: 1783: 1772: 1761: 1750: 1739: 1728: 1717: 1706: 1695: 1684: 1673: 1662: 1651: 1640: 1629: 1618: 1607: 1596: 1585: 1574: 1563: 1552: 1541: 1530: 1519: 1508: 1497: 1486: 1475: 1464: 1453: 1442: 1431: 1420: 1409: 1398: 1387: 1376: 1365: 1354: 1343: 1332: 1321: 1310: 1307:Binary decoder 1299: 1288: 1277: 1266: 1255: 1244: 1233: 1224: 1213: 1202: 1191: 1182: 1171: 1160: 1149: 1138: 1127: 1116: 1105: 1094: 1085: 1074: 1063: 1054: 1043: 1034: 1023: 1012: 999: 996: 968: 965: 916: 913: 879:photodetectors 871:optoelectronic 859:Richardson, TX 843:Jerry Merryman 827: 824: 789: 786: 771:reverse biased 767:photosensitive 714: 711: 703:microprocessor 666: 663: 655:Schottky diode 627:Schottky diode 602: 599: 595:Jerry Merryman 539: 536: 437:infrared light 416: 413: 350: 347: 337: 334: 296: 293: 273: 270: 230: 229: 226: 225: 220: 216: 215: 209: 208: 202: 201:Known for 198: 197: 191: 187: 186: 180: 178:(aged 91) 172: 168: 167: 161: 148: 146: 142: 141: 138: 130: 129: 127:James R. Biard 126: 119: 118: 101:September 2022 33: 31: 24: 15: 9: 6: 4: 3: 2: 2735: 2724: 2721: 2719: 2716: 2714: 2711: 2709: 2706: 2704: 2701: 2699: 2696: 2694: 2691: 2689: 2686: 2684: 2681: 2679: 2676: 2674: 2671: 2669: 2666: 2664: 2661: 2660: 2658: 2637: 2633: 2627: 2611: 2607: 2601: 2594: 2590: 2585: 2579: 2572: 2564: 2558: 2547: 2541: 2525: 2521: 2515: 2509: 2505: 2502: 2495: 2489: 2482: 2476: 2471: 2465: 2459: 2452: 2446: 2439: 2433: 2426: 2420: 2413: 2405: 2399: 2393: 2386: 2377: 2371: 2364: 2355: 2346: 2337: 2330: 2323: 2317: 2310: 2304: 2297: 2288: 2282: 2275: 2269: 2262: 2256: 2249: 2243: 2236: 2232: 2225: 2223: 2218: 2216: 2212: 2211:honoris causa 2207: 2205: 2200: 2197: 2195: 2190: 2188: 2183: 2181: 2168: 2166: 2162: 2160: 2156: 2154: 2150: 2148: 2144: 2142: 2139: 2137: 2133: 2131: 2127: 2125: 2121: 2119: 2115: 2113: 2109: 2107: 2104: 2102: 2099: 2097: 2093: 2091: 2087: 2085: 2081: 2079: 2075: 2073: 2070: 2068: 2065: 2063: 2060: 2058: 2055: 2053: 2050: 2048: 2045: 2041: 2039: 2036: 2034: 2031: 2029: 2026: 2024: 2021: 2019: 2016: 2014: 2011: 2007: 2005: 2002: 2000: 1997: 1995: 1992: 1990: 1987: 1985: 1982: 1980: 1976: 1974: 1971: 1967: 1965: 1962: 1960: 1957: 1955: 1952: 1950: 1947: 1945: 1941: 1939: 1936: 1934: 1931: 1929: 1926: 1924: 1921: 1919: 1916: 1914: 1911: 1909: 1905: 1903: 1900: 1898: 1895: 1893: 1890: 1888: 1885: 1883: 1880: 1878: 1875: 1873: 1870: 1868: 1865: 1861: 1860: 1859: 1847: 1843: 1839: 1836: 1832: 1828: 1825: 1821: 1817: 1814: 1810: 1806: 1803: 1799: 1795: 1792: 1788: 1784: 1781: 1777: 1773: 1770: 1766: 1762: 1759: 1755: 1751: 1748: 1744: 1740: 1737: 1733: 1729: 1726: 1722: 1718: 1715: 1711: 1707: 1704: 1700: 1696: 1693: 1689: 1685: 1682: 1678: 1674: 1671: 1667: 1663: 1660: 1656: 1652: 1649: 1645: 1641: 1638: 1634: 1630: 1627: 1623: 1619: 1616: 1612: 1608: 1605: 1601: 1597: 1594: 1590: 1586: 1583: 1579: 1575: 1572: 1568: 1564: 1561: 1557: 1553: 1550: 1546: 1542: 1539: 1535: 1531: 1528: 1524: 1520: 1517: 1513: 1509: 1506: 1502: 1498: 1495: 1491: 1487: 1484: 1480: 1476: 1473: 1469: 1465: 1462: 1458: 1454: 1451: 1447: 1443: 1440: 1436: 1432: 1429: 1425: 1421: 1418: 1414: 1410: 1407: 1403: 1399: 1396: 1392: 1388: 1385: 1381: 1377: 1374: 1370: 1366: 1363: 1359: 1355: 1352: 1348: 1344: 1341: 1337: 1333: 1330: 1326: 1322: 1319: 1315: 1311: 1308: 1304: 1300: 1297: 1293: 1289: 1286: 1282: 1278: 1275: 1271: 1267: 1264: 1260: 1256: 1253: 1249: 1245: 1242: 1238: 1234: 1231: 1228: 1225: 1222: 1218: 1214: 1211: 1207: 1203: 1200: 1196: 1192: 1189: 1186: 1183: 1180: 1176: 1172: 1169: 1165: 1161: 1158: 1154: 1150: 1147: 1143: 1139: 1136: 1132: 1128: 1125: 1121: 1117: 1114: 1110: 1106: 1103: 1099: 1095: 1092: 1089: 1086: 1083: 1079: 1075: 1072: 1068: 1064: 1061: 1058: 1055: 1052: 1048: 1044: 1041: 1038: 1035: 1032: 1028: 1024: 1021: 1017: 1013: 1010: 1006: 1002: 1001: 998:Biard patents 995: 992: 990: 986: 982: 977: 975: 964: 962: 958: 952: 950: 946: 942: 938: 934: 930: 927:group to the 926: 922: 912: 910: 906: 902: 897: 895: 892:sensors, and 891: 888: 884: 880: 876: 872: 868: 864: 860: 856: 852: 844: 840: 832: 823: 821: 816: 812: 808: 803: 794: 785: 783: 779: 778:semiconductor 776: 772: 768: 764: 763:barrier layer 760: 759:semiconductor 756: 752: 748: 744: 740: 736: 732: 728: 724: 720: 710: 706: 704: 700: 696: 692: 687: 685: 681: 671: 662: 660: 656: 651: 647: 644:(U.S. Patent 643: 638: 636: 632: 628: 623: 619: 612: 607: 598: 596: 591: 588: 584: 580: 576: 572: 568: 564: 560: 557: 553: 544: 534: 529: 526: 524: 520: 516: 512: 507: 504: 501: 496: 494: 490: 486: 482: 478: 474: 470: 466: 462: 458: 454: 450: 444: 442: 438: 433: 430: 429:tunnel diodes 426: 422: 412: 404: 396: 392: 390: 386: 382: 377: 375: 371: 364: 363:James Fischer 360: 355: 342: 333: 331: 327: 323: 322:Phi Kappa Phi 319: 315: 310: 306: 302: 292: 290: 286: 281: 279: 269: 267: 263: 259: 255: 252: 248: 244: 240: 236: 227: 224: 221: 217: 214: 210: 207: 203: 199: 195: 192: 188: 183: 173: 169: 164: 147: 143: 136: 131: 124: 115: 112: 104: 93: 90: 86: 83: 79: 76: 72: 69: 65: 62: – 61: 57: 56:Find sources: 50: 46: 40: 39: 34:This article 32: 28: 23: 22: 19: 2640:. 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The 463:, and 451:Labs, 425:X-band 383:hired 336:Career 219:Fields 184:, U.S. 165:, U.S. 87: 80: 73: 66: 58: 2549:(PDF) 2164:2010. 2158:2007. 2146:2005. 2135:2002. 2129:2002. 2123:2001. 2117:1998. 2111:1989. 2095:1986. 2089:1984. 2083:1983. 2077:1978. 1978:1966. 1943:1964. 1907:1963. 925:VCSEL 775:doped 475:(IR) 92:JSTOR 78:books 2644:2015 2618:2015 2532:2015 2180:IEEE 2152:2007 943:and 877:and 701:and 519:LEDs 515:LEDs 509:The 481:LEDs 449:G.E. 423:for 171:Died 145:Born 64:news 881:), 686:. 650:DTL 635:DTL 563:LED 511:IBM 500:LED 469:MIT 467:at 457:IBM 453:RCA 372:in 307:in 206:LED 47:by 2659:: 2591:. 2224:. 2217:. 2206:. 2196:. 991:. 963:. 896:. 822:. 585:. 361:, 332:. 320:, 316:, 291:. 2646:. 2620:. 2534:. 157:) 153:( 114:) 108:( 103:) 99:( 89:· 82:· 75:· 68:· 41:.

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