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devices. The temperature increase becomes relevant for cases of relatively small-cross-sections wires, because such temperature increase may affect the normal behavior of semiconductor devices.
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The governing equation of the physics of the problem to be analyzed is the heat diffusion equation. It relates the flux of heat in space, its variation in time and the generation of power.
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T. Bechtold, E. V. Rudnyi and J. G Korvink, "Dynamic electro-thermal simulation of microsystems—a review," Journal of
Micromechanics and Microengineering. vol. 15, pp. R17–R31, 2005
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is the rate of heat generation per unit volume. Heat diffuses from the source following equation () and solution in a
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is a predominant heat mechanism for heat generation in integrated circuits and is an undesired effect.
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120:{\displaystyle \nabla \left(\kappa \nabla T\right)+g=\rho C{\frac {\partial T}{\partial t}}}
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problem has gained an increasing interest in recent years due to the miniaturization of
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Heat
Management in Integrated circuits: On-chip and system-level monitoring and cooling
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325:. London, United Kingdom: The Institution of Engineering and Technology.
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Tendency of electrical circuits to produce excess heat while operating
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229:{\displaystyle k={\frac {\kappa }{\rho C}}\,}
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275:See also
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