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77:. For example, in n-doped semiconductor, as the doping concentration is increased, electrons populate states within the conduction band which pushes the Fermi level to higher energy. In the case of degenerate level of doping, the Fermi level lies inside the conduction band. The "apparent" band gap of a semiconductor can be measured using transmission/reflection
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forbids excitation into these occupied states. Thus we observe an increase in the apparent band gap. Apparent band gap = Actual band gap + Moss-Burstein shift (as shown in the figure).
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The effect occurs when the electron carrier concentration exceeds the conduction band edge density of states, which corresponds to degenerate
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is increased as the absorption edge is pushed to higher energies as a result of some states close to the
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being populated. This is observed for a degenerate electron distribution such as that found in some
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Negative
Burstein shifts can also occur. These are due to band structure changes due to doping.
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107:"The Interpretation of the Properties of Indium Antimonide"
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154:"Anomalous Optical Absorption Limit in InSb"
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222:The Physics of Semiconductors
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